JPH06659B2 - Method for manufacturing sputtering target for transparent conductive film - Google Patents
Method for manufacturing sputtering target for transparent conductive filmInfo
- Publication number
- JPH06659B2 JPH06659B2 JP63117136A JP11713688A JPH06659B2 JP H06659 B2 JPH06659 B2 JP H06659B2 JP 63117136 A JP63117136 A JP 63117136A JP 11713688 A JP11713688 A JP 11713688A JP H06659 B2 JPH06659 B2 JP H06659B2
- Authority
- JP
- Japan
- Prior art keywords
- ito
- target
- conductive film
- transparent conductive
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はELディスプレイ、液晶ディスプレイ面発熱
体、タッチパネルなどの透明導電膜をスパッタリング法
で形成する際に用いられるスパッタリングターゲットの
製造法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for producing a sputtering target used when forming a transparent conductive film such as an EL display, a liquid crystal display surface heating element, and a touch panel by a sputtering method. is there.
(従来の技術) 近年、薄膜化技術の発達に伴い表示素子分野などでは透
明導電膜が利用されてきている。現在、透明導電膜の材
質として酸化インジウム−酸化スズ(以下、ITOとい
う)が安定性、高光透過性など理由から多く用いられて
いる。また、ITOからなる透明導電膜の作製方法とし
ては蒸着法、インジウム−スズメタルターゲットを用い
た反応性スパッタ法、ITOターゲットを用いたスパッ
タリング法が知られており、特に成膜コントロールの容
易さからITOターゲットを用いたスパッタリング法が
主流となっている。またスパッタリング装置の大型化に
伴い、ターゲットの大型化が要求されている。(Prior Art) In recent years, a transparent conductive film has been used in the field of display elements and the like with the development of thinning technology. At present, indium oxide-tin oxide (hereinafter referred to as ITO) is often used as a material for the transparent conductive film for reasons such as stability and high light transmittance. In addition, as a method for producing a transparent conductive film made of ITO, a vapor deposition method, a reactive sputtering method using an indium-tin metal target, and a sputtering method using an ITO target are known. The sputtering method using an ITO target has become the mainstream. In addition, as the size of the sputtering apparatus increases, the size of the target is required to increase.
従来ITOターゲットは、ITO粉末を金型プレス成型
法によりITO成型体を得た後、該成型体を焼成するこ
とにより得られているが、金型プレス成型法では均一に
プレスを行ないITO成型体を得ることが困難であり、
ターゲットの大型化を行なった場合、得られるターゲッ
トに反りや割れが生じてしまうので、いくつかのターゲ
ット片を金型プレス成型法で得、これを接合し、用いて
いるのが現状である。しかしながらこの様な方法では、
高価な金型を形状が異なる度に作製する必要があり、ま
た得られる大型のターゲットも接合部が原因でスパッタ
リング中に異常放電が生ずるという問題点がある。Conventionally, an ITO target is obtained by obtaining an ITO molded body from ITO powder by a die press molding method and then firing the molded body. Is difficult to obtain,
When the target is increased in size, the obtained target is warped or cracked. Therefore, at present, several target pieces are obtained by a die press molding method, and these pieces are joined and used. However, in this way,
It is necessary to manufacture an expensive die each time the shape is different, and the obtained large target also has a problem that abnormal discharge occurs during sputtering due to the joint portion.
(発明が解決しようとする問題点) 本発明の目的は、大型のITOスパッタリングターゲッ
トの製造法を提供することにある。(Problems to be Solved by the Invention) An object of the present invention is to provide a method for manufacturing a large ITO sputtering target.
(問題を解決するための手段) 本発明者らは上記問題点を解決するために鋭意検討を行
った結果、泥漿鋳込み成型法を用いることにより簡便に
大型のITOターゲットが得られることを見出だし本発
明を完成するに至った。すなわち本発明は、酸化インジ
ウム−酸化スズの成型体を、スラリー濃度70%以上、
成形圧力0.5kg/cm2以上の条件で泥漿鋳込み成型法
により得、該成型体を焼成することを特徴とする透明導
電膜用スパッタリングターゲットの製造法である。(Means for Solving the Problem) As a result of intensive studies for solving the above-mentioned problems, the present inventors have found that a large-sized ITO target can be easily obtained by using the slurry casting method. The present invention has been completed. That is, the present invention provides a molded body of indium oxide-tin oxide with a slurry concentration of 70% or more,
It is a method for producing a sputtering target for transparent conductive film, which is obtained by a slurry casting molding method under a molding pressure of 0.5 kg / cm 2 or more, and the molded body is fired.
本発明における泥漿鋳込み成型法とは、原料粉末に溶
媒、分散剤及びバインダーを混合して得られたスラリー
を、例えばセッコウ型などの吸水性のある多孔質成形型
に常圧あるいは加圧下で注入し、その後溶媒を除去する
ことにより成型する方法である。このとき、多孔質成形
型の大きさ、形状を変えることにより大型で所望の形状
のITO成型体を得ることができる。The slurry casting molding method in the present invention means that a slurry obtained by mixing a raw material powder with a solvent, a dispersant and a binder is poured into a water-absorbing porous molding die such as a gypsum mold under normal pressure or pressure. And then the solvent is removed to mold. At this time, by changing the size and shape of the porous mold, it is possible to obtain a large ITO molded body having a desired shape.
本発明ではスラリーを得る際に、溶媒としては通常水が
用いられ、分散剤としては例えばポリカルボン酸系のも
のなどを、バインダーとしては例えばアクリルエマルジ
ョン系のものなどを挙げることができるが、これらに限
定されない。また原料粉末としては混合法、共沈法など
によって得られるITO粉末が用いられ、通常酸化イン
ジウムを70重量%以上含有するITO粉末が用いられ
る。更に、得られるターゲットから製膜される透明導電
膜の導電性、透明度を向上させるために酸化インジウ
ム、酸化スズの他に第三成分を添加したITO粉末を用
いても何ら差支えない。In the present invention, when a slurry is obtained, water is usually used as the solvent, examples of the dispersant include polycarboxylic acid type, and examples of the binder include acrylic emulsion type. Not limited to. As the raw material powder, an ITO powder obtained by a mixing method, a coprecipitation method or the like is used, and an ITO powder containing 70% by weight or more of indium oxide is usually used. Furthermore, in order to improve the conductivity and transparency of the transparent conductive film formed from the obtained target, ITO powder containing a third component added in addition to indium oxide and tin oxide may be used.
このときのスラリー濃度は70%以上であることが好ま
しく、更に好ましくは75〜80%である。スラリー濃
度が70%未満の場合、ターゲットの作製中に割れが生
じ易くなる傾向がある。The slurry concentration at this time is preferably 70% or more, more preferably 75 to 80%. If the slurry concentration is less than 70%, cracking tends to occur during the production of the target.
また、成型はスラリーを0.5kg/cm2以上、更に2.
0kg/cm2以上の加圧で成形型に注入する加圧鋳込みを
行なうことが好ましく、これにより得られるターゲット
の密度が高くなり、反りが小さくなる。For molding, the slurry is 0.5 kg / cm 2 or more, and 2.
It is preferable to perform pressure casting in which the pressure is 0 kg / cm 2 or more, and the mixture is poured into the mold so that the density of the target obtained becomes high and the warpage becomes small.
次いで、上記ITO成型体を焼成することにより所望の
大きさ、形状のITOターゲットが得られる。このとき
焼成温度は1300〜1450℃で1時間以上行うこと
が好ましい。また、焼成を行う前にITO成型体に冷間
静水圧プレスなどを施し、ITO成型体の圧密化を行え
ば相対密度の大きいITOターゲットを得ることができ
るので好ましい。Then, the ITO molded body is fired to obtain an ITO target having a desired size and shape. At this time, the firing temperature is preferably 1300 to 1450 ° C. for 1 hour or more. Further, it is preferable to subject the ITO molded body to cold isostatic pressing or the like before firing to consolidate the ITO molded body so that an ITO target having a large relative density can be obtained.
(実施例) 以下、実施例により本発明を更に詳しく説明するが、本
発明は何らこれらに限定されるものではない。(Examples) Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto.
実施例1 市販の酸化インジウム粉末4950g,酸化スズ粉末5
50g、ポリカルボン酸系分散剤(固形分40%)10
0g、アクリルエマルジョン系バインダー(固形分40
%)100g及び純水1740gを10ナイロン製ポ
ット中で直径15mmの鉄芯入り樹脂ボールを用いて回転
ボールミルにより16時間混合し、スラリー濃度75%
の泥漿を得た。Example 1 4950 g of commercially available indium oxide powder and 5 tin oxide powder
50 g, polycarboxylic acid type dispersant (solid content 40%) 10
0 g, acrylic emulsion binder (solid content 40
%) 100 g and pure water 1740 g are mixed in a 10 nylon pot with a resin ball containing an iron core having a diameter of 15 mm for 16 hours by a rotary ball mill to obtain a slurry concentration of 75%.
I got the mud.
次いで、得られた泥漿を充分脱泡した後、内寸法180
×1080×10tのセッコウ型に注入し、鋳込み圧力
0.5kg/cm2で鋳込み成型を行いITO成型体を得
た。Then, after thoroughly defoaming the obtained slurry, the inner size is 180
It was poured into a gypsum mold of × 1080 × 10 t and cast-molded at a casting pressure of 0.5 kg / cm 2 to obtain an ITO molded body.
その後、得られた成型体を、脱バインダーを行い、13
50℃で3時間焼成し焼結体を得、これを放電加工及び
平面研削で加工し、150×900×6tのITOター
ゲットを得た。得られたターゲットの相対密度は60%
であった。Thereafter, the obtained molded body is debindered, and 13
It was fired at 50 ° C. for 3 hours to obtain a sintered body, which was processed by electric discharge machining and surface grinding to obtain a 150 × 900 × 6 t ITO target. The relative density of the obtained target is 60%
Met.
実施例2 内寸法180×620×8tのセッコウ型を用いて泥漿
鋳込み成型を行い、更に焼成後得られた焼結体から15
4×508×6tのITOターゲットを得た以外は実施
例1と同様の方法でITOターゲットを得た。得られた
ターゲットの相対密度は63%であった。Example 2 Sludge casting was carried out using a gypsum mold having an internal size of 180 × 620 × 8 t , and after sintering, the sintered body obtained was 15
An ITO target was obtained in the same manner as in Example 1 except that an ITO target of 4 × 508 × 6 t was obtained. The relative density of the obtained target was 63%.
比較例1 市販の酸化インジウム粉末4950gと酸化スズ粉末5
50g、ポリカルボン酸系分散剤(固形分40%)10
0g、アクリルエマルジョン系バインダー(固形分40
%)100gおよび純水2885gを10ナイロン製
ポットで直径15mmの鉄心入り樹脂ボールを用いて回転
ボールミルにより16時間混合し、スラリー濃度65%
のITO粉末スラリーを得た。Comparative Example 1 4950 g of commercially available indium oxide powder and tin oxide powder 5
50 g, polycarboxylic acid type dispersant (solid content 40%) 10
0 g, acrylic emulsion binder (solid content 40
%) 100 g and pure water 2885 g are mixed in a 10-nylon pot with a resin ball containing an iron core having a diameter of 15 mm by a rotary ball mill for 16 hours to obtain a slurry concentration of 65%.
An ITO powder slurry of was obtained.
該スラリーを十分脱泡した後、内寸180mm×1080
mm×10mmのセッコウ型を用い、鋳込み圧力0.5kg/
cm2で加圧鋳込み成型により予備成型を行い、ITOの
成型体を作成したが、成型強度が弱く、鋳型から脱型す
る際にクラックが入った。After sufficiently defoaming the slurry, the inside dimension is 180 mm x 1080
mm × 10 mm gypsum mold, casting pressure 0.5 kg /
A molded body of ITO was prepared by performing pre-molding by pressure casting at cm 2 , but the molding strength was weak, and cracks were formed when the mold was removed from the mold.
比較例2 市販の酸化インジウム粉末4950gと酸化スズ粉末5
50g、ポリカルボン酸分散剤(固形分40%)100
g、アクリルエマルジョン系バインダー(固形分40
%)100gおよび純水1740gを10ナイロン製
ポットで直径15mmの鉄心入り樹脂ボールを用いて回転
ボールミルにより16時間混合し、スラリー濃度75%
のITO粉末スラリーを得た。Comparative Example 2 4950 g of commercially available indium oxide powder and tin oxide powder 5
50 g, polycarboxylic acid dispersant (solid content 40%) 100
g, acrylic emulsion binder (solid content 40
%) 100 g and 1740 g of pure water were mixed in a 10-nylon pot for 16 hours using a resin ball with an iron core having a diameter of 15 mm by a rotary ball mill to obtain a slurry concentration of 75%.
An ITO powder slurry of was obtained.
該スラリーを十分脱泡した後、内寸170mm×1080
mm×10mmのセッコウ型を用い、鋳込み圧力0.1kg/
cm2で加圧鋳込み成型により予備成型を行い、ITOの
成型体を作成したが、着肉むらを生じ、ITO成型体に
しわ状の微クラックが多く入った。After sufficiently degassing the slurry, the inner size is 170 mm x 1080
mm × 10 mm gypsum mold, casting pressure 0.1 kg /
Preforming was performed by pressure casting at cm 2 , and an ITO molded body was prepared. However, unevenness of inking occurred and many wrinkle-like fine cracks were formed in the ITO molded body.
(発明の効果) 以上述べたとおり、本発明によれば大型でかつ任意形状
のITOターゲットを、簡便に得ることができる。ま
た、大型のターゲットを接合することなしに得ることが
できるので、得られるターゲットには、スパッタリング
時のハンダの染出しあるいはそれに伴う異常放電がなく
なり、良好な膜質の透明導電膜の形成が可能となる。(Effect of the Invention) As described above, according to the present invention, a large-sized and arbitrarily shaped ITO target can be easily obtained. In addition, since it can be obtained without joining a large target, the obtained target is free from solder bleeding during sputtering or abnormal discharge associated therewith, and it is possible to form a transparent conductive film of good film quality. Become.
Claims (1)
体をスラリー濃度70%以上、成形圧力0.5kg/cm2
以上の条件にて泥漿鋳込み成型法により得、該成型体を
焼成することを特徴とする透明導電膜用スパッタリング
ターゲットの製造法。1. A molded product containing indium oxide-tin oxide, having a slurry concentration of 70% or more and a molding pressure of 0.5 kg / cm 2.
A method for producing a sputtering target for a transparent conductive film, which is obtained by a sludge casting molding method under the above conditions and is then fired.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117136A JPH06659B2 (en) | 1988-05-16 | 1988-05-16 | Method for manufacturing sputtering target for transparent conductive film |
| DE68924095T DE68924095T2 (en) | 1988-05-16 | 1989-05-12 | Method for producing a sputtering target for producing an electrically conductive, transparent layer. |
| EP89108558A EP0342537B1 (en) | 1988-05-16 | 1989-05-12 | Process for the manufacture of a sputtering target for producing electroconductive transparent films |
| CA000599638A CA1337809C (en) | 1988-05-16 | 1989-05-15 | Sputtering target for producing electroconductive transparent films and process for manufacture thereof |
| KR1019890006539A KR940003786B1 (en) | 1988-05-16 | 1989-05-16 | Manufacturing method of sputtering target for transparent conductive film |
| US07/352,473 US5160675A (en) | 1988-05-16 | 1989-05-16 | Sputtering target for producing electroconductive transparent films and process for manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117136A JPH06659B2 (en) | 1988-05-16 | 1988-05-16 | Method for manufacturing sputtering target for transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01290550A JPH01290550A (en) | 1989-11-22 |
| JPH06659B2 true JPH06659B2 (en) | 1994-01-05 |
Family
ID=14704343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63117136A Expired - Fee Related JPH06659B2 (en) | 1988-05-16 | 1988-05-16 | Method for manufacturing sputtering target for transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06659B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002322560A (en) * | 2001-04-24 | 2002-11-08 | Mitsui Mining & Smelting Co Ltd | Sputtering target and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2459917B (en) | 2008-05-12 | 2013-02-27 | Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd | A process for the manufacture of a high density ITO sputtering target |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730645B2 (en) * | 1973-05-17 | 1982-06-30 | ||
| JPS5782170A (en) * | 1980-11-11 | 1982-05-22 | Matsushita Electric Industrial Co Ltd | Ceramic material mud casting formation |
| JPS61158403A (en) * | 1984-12-28 | 1986-07-18 | 京セラ株式会社 | Method of molding ceramic |
| JPS6212009A (en) * | 1985-07-09 | 1987-01-21 | 昭和電工株式会社 | Formation of indium oxide based low resistance transparent thin film |
| JPS6340756A (en) * | 1986-08-07 | 1988-02-22 | 旭硝子株式会社 | Indium oxide sintered body for tin-containing physical vapor deposition |
-
1988
- 1988-05-16 JP JP63117136A patent/JPH06659B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002322560A (en) * | 2001-04-24 | 2002-11-08 | Mitsui Mining & Smelting Co Ltd | Sputtering target and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01290550A (en) | 1989-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |