JPH0666258B2 - Molecular beam deposition equipment - Google Patents

Description

The present invention relates to molecular beam deposition, and more particularly to simultaneous deposition of materials on multiple substrates with one or more molecular beams.

Molecular beam deposition can be broadly defined as a method of growing a thin film by forming one or more molecular beams on a substrate in ultrahigh vacuum. In a narrow sense, it is an accurate explanation of current technology. Molecular beam (Molecular beam)
An epitaxy method (MBE), which involves the reaction of one or more molecular beams with a substrate or the deposition of molecular beam particles on the substrate by a process including epitaxial thin film on a single crystal substrate. Can be said to be to grow. A molecular beam is not only a polyatomic layer but also a monoatomic layer beam. Therefore, the molecular beam deposition includes the epitaxial growth process as well as the non-epitaxial growth process. For example, molecular beam deposition includes growing a polycrystalline GaAs layer or amorphous silicon layer on a substrate.

Although molecular beam deposition is considered a modification of simple vacuum deposition, it allows better control of the material on the substrate than vacuum deposition. By providing good control over the deposited material and by keeping the deposition rate as low as possible, it is possible to grow thin films with compositions having precisely defined additive concentrations. Due to the fact that growth is generally performed at relatively low substrate temperatures compared to other growth techniques such as liquid phase epitaxy or CVD (Chemical Vapor Deposition), control the composition. Is easy and the diffusion process is very slow. Essentially, an arbitrary film composition and impurity distribution can be obtained by precisely controlling the film thickness. In fact, molecular beam epitaxy (MBE) is also used to grow thin layers such as monoatomic layers. Furthermore, because of the difficulty in obtaining the desired composition with interdiffusion, growth at relatively low temperatures can achieve material growth and use of substrate material that is not possible with high temperature growth techniques.

The molecular beam epitaxy method includes IV group, III-V group, II-VI group, IV
It has been used to form thin films or layers of various semiconductor materials, including Group VI materials and the like. Within the III-V range, IMPATT diodes, microwave mixer diodes, double heterojunction lasers, as well as superlattice devices have been manufactured. The molecular beam epitaxy method for elemental substances such as silicon has been very recently developed. With this method, a pn diode, a pin
Diodes, varactor diodes, as well as MOSFET structures have been created. Silicon MBE (Molecular Beam Epitaxy) has recently become of interest due to the development of heterostructures of silicon metal and silicon compounds and the improvement of silicon growth technology on insulators.

It goes without saying that the development of a new device is of course necessary for the successful development of the MBE (minute sub-line epitaxy method). This development has been completed to the point that commercial MBE (Molecular Beam Epitaxy) equipment is currently available. However, such a device and the research and development device in use have a limited processing capacity. For example, deposition from large numbers of molecular beams, as well as processing large numbers of wafers in a relatively short period of time, is not usually possible. The composition of the film obtained by growth and the output of the device are thus limited.

Limited processing power has many causes. The most important factor is that the device can only deposit on one substrate at a time and that the device employs a relatively difficult method of moving the substrate between the work chambers.
The space between the work chambers is, for example, between the growth work chamber and the analysis chamber for accommodating the device characterizing the substrate surface or for moving the substrate from the growth table to the analysis table. Furthermore, in order to homogenize the composition across the substrate, the beam flux from each furnace must typically be constant across the substrate, a requirement that limits the number of furnaces that can be used simultaneously. It has been restricted. Furthermore, for example, since the standardization of the parts has not been made between the analysis work room and the growth work room, the degree of freedom of the device is low and the cost is high.

Recent developments have improved throughput. For example, 19
Alfred Y. Cho (February 6, 1979)
(Chiyo) U.S. Pat.No. 4,137,865, for example, sequentially deposits material on multiple substrates in a manner that begins and ends deposition on one substrate before starting deposition on the next substrate. A molecular beam device for carrying out is described. A schematic diagram of an experimental molecular beam device designed for silicon is available from Journala.
l of Crystal Growth, Volume 45,
Pages 287-291, and Proceedings of the F
ourth International Conference on Vapor Growth and
Epitaxy (4th International Conference on Vapor Growth and Epitaxy) (held July 9-13, 1978, Nagoya, Japan). The device has only one chamber and can process only one substrate at a time. That is, only one substrate is placed in the working chamber at the same time. Another device designed for silicon is the Journal of Spplied Physi, published August 1977.
cs (American Society of Applied Physics), Vol. 48, pages 3345-33
It is described on page 99. This device is a silicon MBE
Although it is suitable for (molecular beam epitaxy), it can only process one substrate at a time.

Moreover, the use of vertical deposition structures results in flakes of deposited material falling back into the molecular beam source. If such a phenomenon occurs, either the flakes contaminate the molecular beam source or the flakes are deposited so fast that crystal defects are generated in the grown epitaxial layer. In order to avoid such unfavorable results, Knudsen (Kn
Generally, a III-V group MBE (Molecular Beam Epitaxy) apparatus using a udsen) type radiation source is tilted from the vertical to perform deposition in a state close to horizontal. Such a tilt from the vertical direction cannot be applied to a method using an electron beam deposition source which is usually adopted for MBE (molecular beam epitaxy) of silicon.

In the molecular beam deposition process according to the present invention, the platen having a plurality of substrates mounted thereon is rotated to sequentially move the substrates to the molecular beam passage. In this method, a single processing operation is performed on all substrates to achieve the desired deposition,
Simultaneously processing multiple substrates. Further, since the platen having the substrate mounted thereon directly covers the entire molecular beam source, a vertical molecular beam source can be used. In this way, the platen can be removed with the substrate and cleaned prior to reuse, thus avoiding large scale deposition of flake-bearing material. Using multiple working chambers including loading and unloading working chambers, connecting to the growth working chambers via valves, and providing a means for transporting the platen between the working chambers, up to atmospheric pressure The deposition can be sequentially performed on a plurality of platens filled with the substrate without increasing the pressure in the growth work chamber.

Hereinafter, the present invention will be described in detail with reference to the drawings. In the drawings, the same reference numbers are used for the same parts in the different figures.

The apparatus shown in FIG. 1 has a first loading / unloading work room 10,
An analysis work room 20, a growth work room 30, and a second loading / unloading work room 40 are provided. The working chamber is cylindrical and made of stainless steel. Except as noted below, working chambers 10 and 40 are preferably the same, and working chambers 20 and 30 are also preferably the same. That is,
Aerotock or valve 11,21,31 respectively with working room 10
Located between 20, 20 and 30, 30 and 40, adjacent working chambers may be separated from each other, or they may be interconnected as desired. The construction of these and other aero- locks mounted on the device is a technique known to those skilled in the relevant arts. In this regard, reference may be had to US Pat. No. 4,137,865 and need not be discussed in detail.

The working chamber 10 is provided with terminal means 101, and in the illustrated apparatus the opening 101 is a plate attached to the working chamber 10 by a hinge (not shown). The hinges can be opened and platens 5 with multiple boards 550 to be placed inside the working room 10.
It allows 00 to be held. After loading the platen with the substrate into the working chamber, pump 102 turns valve 1
The work chamber 10 is evacuated via 03. Typically, the desired pressure is 10 ^-6 torr. The carrier 230 is located below the platen 500.

The analysis work room includes a pump 201 connected to the work room via a valve 202 and a baffle 203. The work room is further equipped with a shroud 205, a heating element 207,
A radiant heat shield 209, a shaft 210 having a shoulder 211 for supporting the platen 550 for holding the substrate, a drive means 212 for driving the shaft 210, and a bellows 213 are provided. The carrier 230 is located below the platen.
The preparation tools and analysis tools that are exposed to the working room 20 via the flange 214 are generally a spatula gun 215, an infrared thermometer 217, etc., as well as infrared radiation measurement, Auger electron spectroscopy measurement, secondary ion mass spectrometry There is an analysis table 240 and the like that are implemented to do this.

Pump 201 is typically a cryogenic pump capable of achieving pressures below 10 ^-8 torr. The cryogenic fluid is typically liquid nitrogen (LN ₂ ), which is pumped through the pump to the shroud 2
Cool 05. The heating element 207 is conventional and heats all platens 500 in the illustrated apparatus,
Heat all substrates. If desired, heating element 207 can be configured to heat only a portion of platen 500. Although the heat shield 209 is shown as having an annular structure, it may be a cylindrical shield and covers the heating element. If a portion of the platen 500 is selectively heated, the radiant heat shield 209 can be shaped as desired to shield only the heated portion. The radiant heat shield 209 as well as the platen 500 are made of a refractory material that is chemically inert to the material being deposited, if desired. For example, tantalum is preferred when depositing silicon. The shoulders 211 support the platen 500 and are frictionally coupled to the platen 500 so that the shaft 210 can rotate the platen 500 and the platen 500 can also rotate the substrate 550. The bellows 213 is made of a simple type stainless steel, and the shaft 210 and the platen 500 can be rotated and vertically moved by the driving means 212.

The operation of depositing at least one type of substance on a plurality of substrates across at least one layer is performed inside the growth work chamber 30. The vacuum condition is typically a low temperature pump 301 connected to the work chamber 30 via a valve 302 and a baffle 303.
Therefore, it is the same as that obtained in the growth work chamber 30. The pump must be able to hold a pressure below 10 ^-10 torr. The inside of the work chamber is surrounded by a shell 305 similar to that described for the analysis work chamber, and is cooled to a low temperature by a fluid such as liquid nitrogen. The growth work chamber 30 includes an n-type ion source 306 and a p-type ion source 308. Although both ion sources are shown, it should be understood that more or fewer ion sources could be used depending on the manufacturing device. The shutter drive units 309, 311 are respectively shutters 313, 3
The position of 15 is controlled, and the emission of the ion flow from the ion sources 306 and 308 can be started or terminated with respect to the substrate 550 set at the growth position. Flange 316 between shutter drive and ion source
Have access to the work room through. Flange 31
The working chamber 30 on 6 and the working chamber 20 on flange 214 are preferably essentially the same. In the apparatus described for depositing silicon, the ion sources 306 and 308 are field emission emission ion sources because they are small and do not need differential evacuation because there is no plasma gas. Although field emission emission ion sources are preferred, Knudsen type emission cells can also be used.

The carrier 230 is located below the platen 500. The growth work chamber 30 includes a shaft 318 for supporting the platen 500 for holding the substrate 550, and a driving means 320 for the shaft 318. The shaft 318 is connected to the drive means 320 via a bellows 322. This allows the drive means 320 to move the platen 500 up and down. Shaft 318
Since the shoulder portion 319 of the platen can be frictionally coupled to the platen 500, the platen 500 can be rotated by the driving means 320. In the position where the platen is lifted by the driving means 320, the substrate 550 is supported at the growth position or at a position where it can be rotated and brought to the growth position. Growth chamber 30 is substrate 550
Heating element 324 is also included. The heating element 324 is surrounded by a radiant heat shield 326. Although the heat shield 326 has an annular structure, it may be a cylindrical shield as in the case of the analysis work chamber 20. However, the heating element 324 generally heats all platens located below the thermal shield 326 so that deposition can be performed on all substrates simultaneously. If you want to monitor the temperature of the board 550,
Use infrared thermometer 328. The working chambers 20 and 30 in the illustrated apparatus are the same, except that different elements, furnaces, analytical instruments, etc., face the working chamber through a large bottom flange.

The second loading / unloading work chamber is provided with an opening (access port) 101 through which the platen 500 and the substrate 550 can be removed, and pump means 402 connected to the work chamber via a valve 403. ing. Carrier 230 is a platen
It is located under 500. The working room 40 is preferably the same as the working room 10 in order to reduce manufacturing costs, but this need not be described in further detail.

The device is equipped with two loading / unloading work chambers, one for analysis and one for growth, although other configurations are possible. For example, the second analysis work room may be located intermediate the growth work room and the second load / unload work room, or the analysis work room may be omitted or the first load work room may be omitted. It can also be combined with the unloading work room. Further, if two growth working chambers are provided, mutual contamination can be prevented. For example, if silicon is deposited in one working chamber and GaP is deposited in the other working chamber, contamination of phosphorus in the silicon working chamber can be prevented. Finally,
Although the efficiency of the device will probably decrease with respect to the number of processed substrates, it is possible to access the analysis work room and the growth room work room only from the load / unload work room.

The cross section along line 1-1 of FIG. 1 is of the growth work chamber 30 and is shown in FIG. Although not shown in addition to the elements shown in FIG. 1, the working chamber 30 is equipped with furnaces 330 and 332, vapor deposition meters 334 and 336, and a transportation means 230. The furnace is for producing molecular beams directed to the growth position.
Although two furnaces are shown, more or fewer furnaces may be used if large or small amounts of molecular beam source are required. Shutters 338 and 340 start and terminate the emission of beam bundles from furnaces 330 and 332, respectively, and guide the molecular beam to the growth position after heating the furnace. The positions of the shutters 338, 340 are respectively the shutter drive means 342, 3
Controlled by 44. In the depicted apparatus, at least one furnace is believed to be filled with electron beam (not shown) molten silicon. A piece of silicon is placed in a furnace and the unmelted silicon acts as a crucible with respect to the melted silicon so that only the central part of the silicon is melted by the electron beam. This melting technique is known in the prior art. If a heterostructure of silicon metal and silicide is made, the second furnace can be filled with, for example, silicon or cobalt.

Although the apparatus shown in FIGS. 1 and 2 has been described as a molecular beam deposition apparatus, the illustrated furnace is a Knudsen type radiant furnace similar to that used in the molecular beam epitaxy apparatus for III-V compounds. Does not have to be. It is also clear that if there are more than one molecular beam source in the growth chamber, then growth on any substrate will take place at more than one growth position. Even in the apparatus described with reference to FIGS. 1 and 2, Au (gold) or non-epitaxial growth method is used.
Metals such as Cu can be deposited.

FIG. 3 is a top view of the platen. Substrate holding platen
The 500 is preferably a circular one having a hole 560 at the center through which the shafts 218 and 310 pass. The plurality of substrates 550 are made of a semiconductor such as silicon or an insulator such as sapphire, and are fitted in a plurality of holes having lips for inserting and supporting the substrates. These cavities are generally circular, like the substrate shown, and are spaced from the center of the platen by r and angularly 360 / n (n: number of substrates). Is desirable. The platen shown is approximately 35.5 cm (14 inches) in diameter and 8.
A 75 (3 inch) substrate is mounted.

The platen carrier is shown in FIGS. 4 and 5. Fourth
Whereas the shape shown in the figure carries only the platen,
The form shown in FIG. 5 carries a platen and a platen holding frame. In FIG. 4, the platen 500 on which the substrate 550 is mounted is directly conveyed onto the driving device 501. The driving device 501 moves on a wheel 505 driven by a motor 503. The motor 503 is located outside the working chamber and is coupled by belt drive via a vacuum penetration device. The transportation means includes a drive device 501, a wheel 505, and a motor 503. Between the motors of different work rooms,
At the same time, it is synchronized so that the transport means can be driven in all working rooms at the same speed. On the contrary, it is also possible to drive the vehicle with a single motor in all working chambers by means of a suitable connection between the vehicles. In order to be able to close the valve in the middle of the adjacent working chambers, there is a gap between the adjacent conveying means and each working chamber is equipped with a conveying means. Although the drive system shown is of the belt drive type, other drive systems such as chain or worm gear drive can also be used. As is apparent from FIG. 5, the platen 500 need not be carried directly onto the drive 501. In this type of carrier, the platen is carried by a plate 570 having a recess for supporting the platen 500. The plate 5
70 has a protrusion 572 that is supported by the belt driving device 501 and is in contact with the belt driving device.

It can be confirmed by referring to FIG. 6 which distance between the substrate and the furnace with respect to the shaft of the shaft is suitable for the growth position.
The substrate rotates about a vertical axis and the point ion source is located at a unit radius distance. FIG. 6 is a plot of an equal beam flux curve at the growth position, with the vertical axis as the parameter and the gap between the substrate and the furnace as the parameter, and the horizontal axis as the parameter as the radial distance of the substrate measured from the rotation axis. Is. For clarity and simplicity, the coordinates of the vertical and horizontal axes are plotted in terms of the gap from the rotary axis to the furnace,
For example, the furnace is considered to be located at a unit length from the axis of rotation. In other words, when the center of the substrate is separated from the shaft of the shaft by a unit length in the radial direction, the substrate is also separated from the shaft by the same distance in the radial direction as in the case of the furnace. 10 cm
As is clear from the long horizontal line (1) representing the (4 inch) substrate, the vertical distance from the furnace to the substrate is slightly longer than the distance from the rotation axis to the furnace, and moreover, from the rotation axis to the center of the substrate. The horizontal distance is about 0.6 from the axis of rotation to the furnace.
A doubling will result in a relatively uniform beam bundle across the entire substrate. The short horizontal line (2) represents a 7.5 cm (3 inch) substrate. Even if the substrate is placed at a point about 1.5 units long from the plane containing the furnace, and even if it is placed at the center of the rotation axis,
A very uniform beam bundle is obtained. This position is not the most preferred, as there are severe restrictions on the number of substrates that can be processed simultaneously. Other gaps can be provided for substrates of different diameters. In general, for substrates smaller than the above two dimensions, the distance between the furnace and the substrate decreases and the radial distance from the axis to the substrate increases.

In the above apparatus, the substrate is placed horizontally on a flat, relatively thin platen. With a flat platen,
The cost of machining platens made of refractory materials can be minimized and the amount of material used can be reduced. Other than flat platen can be used.

The operation of the device is described below, but here it is assumed that the working chamber is initially at atmospheric pressure. This assumption need not hold after the device has begun to operate. After reaching the desired vacuum degree in the growth work chamber 30 and the analysis work chamber 20, the vacuum is maintained except when the furnace is reloaded. Interlocks can also be used so that the furnace can be reloaded without breaking the vacuum. The board 550 is first mounted on the first platen 500, and the first platen is the first load plate.
It is put into the unloading work room 10 and set on the transportation means 230. First, the substrate 550 is cleaned according to commonly used methods to remove surface contaminants. Valve 103
Is opened, the valve 11 is closed, and the pressure in the first working chamber 10 for loading and unloading is pumped to about 10 ^-6 torr.
Reduced to. When the pressure decreases, valve 11 is opened.
The valves 21 and 31 in the apparatus can connect the adjacent work chambers, but the valve 11 is opened and closed simultaneously with the other valves 21 and 31. The transportation means 230 transports the substrate 550 to the analysis work room 20. After this valve 11 closes again. At this time, the second platen 500 for holding the substrate 550 is placed in the loading / unloading work chamber 10. Pump 201 connected to the analysis work room 20
Reduces the pressure in the analysis work chamber 20 to about 10 ^-8 torr. After finishing the desired analysis process and preparation process including the process of cleaning the substrate with the electron gun 215 for sputtering,
The valves 11, 21, 31 connecting the adjacent working chambers are opened again, and the transportation means 230 transports the first platen 500 to the growth working chamber 30 and at the same time transports the second platen 500 to the analysis working chamber 20. To do. Except when reloading the furnace or ion source, or performing other such work, it is important to operate the device without raising the growth work chamber 30 or the analysis work chamber 20 to atmospheric pressure. This can be achieved by a structure including a valve. If desired, the interlock can be used to reload the furnace without breaking the vacuum in the chamber. Drive means 320 in the growth work room 30
Is operated, the shaft 318 lifts the platen 500 from the transportation means and starts rotating the platen 500 and the substrate 550 in the growth position. When silicon is being deposited, the heating element 324 is the substrate 5
Both 50 and Platen 500 are heated to a temperature approximately in the range of 400 ° C to 1000 ° C. Higher temperatures can be used because the diffusion process is important, but the features of molecular beam deposition are diminished.
Lower temperatures can be used when growing amorphous materials. The temperature is monitored by an infrared thermometer 328. Molecular beam source 3
A platen 500 is placed over the entire surface of 30,332 to prevent the material from growing into large particles. When the platen 500 is removed from the loading / unloading work chamber 40 with the substrate 550 attached, the platen 500 can be cleaned. Platens made of chemically inert materials such as tantalum can be cleaned by known mechanical or chemical means. Even if the deposited material is not completely removed, the flaking problems that commonly occur in vertical deposition equipment are reduced with this equipment. Both the molecular beam source cross-contamination and the epitaxy defect density must be significantly reduced.

Since the silicon is contained in at least one of the furnaces 330 and 332, a known method is used to direct the electron gun by applying an appropriate magnetic field to the silicon surface forming the silicon molecular beam. . This type of beam source is suitable for use with silicon because molten silicon has a high activity. N-type ion source 306 and p-type ion source 308 are also filled with suitable n-type and p-type additives. Beam emission from these ion sources can be initiated and terminated by opening and closing respective shutters 313, 315 as discussed above.

After depositing the desired material layer, the drive means 320 ceases to rotate and the platen 500 is lowered onto the carrier means 230. The valves 11, 21, 31 between the adjacent work chambers are opened, and the first platen 500 is moved from the growth work chamber 30 to the second load / unload work chamber 40 by the transportation means 230. At the same time, the third platen 500 is moved from the first loading / unloading work room 10 to the analysis work room 20, and the second platen 50 is moved.
0 is moved from the analysis work room 20 to the growth work room 30.
Of course, such a process does not provide maximum output from the device, but each working room need not be equipped with a platen.

The angular velocity of the shaft 318 and the angular velocity of the substrate 500 can be controlled in the growth working chamber so that a material layer having a desired film thickness and composition is grown. For example, one furnace
The 330 can be filled with silicon and the second furnace 332 can be filled with cobalt and the angular rate can be adjusted to deposit alternating layers of silicon and cobalt. In another example, the beam flux velocities from p-type ion source 309 and n-type ion source 311 and the angular velocity of the substrate can be adjusted to deposit p-type and n-type layers of silicon alternately. . Typical deposition rates are between 1 and 10Å / s. At low speeds contaminants may be deposited and at high speeds it is difficult to precisely control the membrane. The exact deposition rate depends on the device being manufactured.

Although the operation of the device has been described using silicon, it should be understood that the device can be used with other semiconductor materials such as III-V compounds. When growing such compounds, the furnace would be replaced by a conventional Knudsen type radiant cell. Placing a removable platen on the furnace eliminates flaking problems,
Group III-V compounds can be deposited by a simple vertical deposition method. In this configuration, more substrates can be used because the Knudsen cells are placed vertically parallel to the cell axis without keeping the substrates near horizontal and gathering in the center. For example, if the axial distance from the ion source to the working chamber is set to 15 cm (6 inches), at least 20 Knudsen cells can be used instead of the 6-8 furnaces in currently available equipment. Can be used. This large number of cells can be used to increase the number of semiconductor materials or additives that can be deposited in a single system. With a low platen rotation frequency and a properly configured furnace, growth structures with varying compositions are obtained. As a result, the shutter of the furnace having a complicated structure can be removed.

Although the apparatus has been described with respect to simultaneous deposition on multiple substrates, the term "simultaneous" does not mean that all substrates receive an equal beam flux at all times, but only on all substrates during a single processing operation. It should be understood that it is used in the sense that the desired layer can be deposited.

[Brief description of drawings]

FIG. 1 shows a cross section of a device according to the invention. FIG. 2 is a sectional view of the growth working chamber taken along line 1-1 of the apparatus of FIG. FIG. 3 is a top view of the platen used in the apparatus of FIGS. 1 and 2. 4 and 5 are perspective views of a vehicle for transporting platens in the apparatus of FIGS. 1 and 2. FIG. 6 shows various beams on the substrate with the gap between the substrate and the furnace with respect to the vertical axis and the distance from the rotation axis of the rotating means to the plane of the substrate with respect to the horizontal axis. It is a graph plotted against the bundle arrival speed. (Explanation of symbols for main parts) Working room: 10,20,30,40 Valve: 11,21,31 Heating element: 207 Platen: 500 Substrate: 550 Driving means: 212,320 Transporting means: 230 Molecular beam source: 306,308

Continuation of the front page (56) Reference JP-A-53-110367 (JP, A) JP-A-55-19842 (JP, A) JP-A-54-87477 (JP, A) JP-A-56-4233 (JP , A) Japanese Patent Laid-Open No. 56-108286 (JP, A) US Patent 3667424 (US, A) US Patent 3911162 (US, A)

Claims (7)

[Claims] 1. A vacuumable growth chamber provided with at least one molecular beam source for generating a molecular beam, a platen for mounting a plurality of substrates, and a platen mounted on the platen. All the substrates are provided with means for rotating the platen about this axis so as to make a simple circular motion about the axis, and means for heating the plurality of substrates, wherein one substrate is The molecular beam flux that the substrate receives from the molecular beam source at the moment when it comes closest to the molecular beam source is non-uniform over the entire substrate, but when the platen rotates, each substrate is almost continuous from each molecular beam source. The molecular beam source is separated from the axis and the axis from the platen so that the average flux of the molecular beam that each substrate receives from the molecular beam source when the platen makes one revolution is substantially uniform over the entire substrate. Placed apart in the direction The substrate mounting position on the platen is equidistant from the axis, the molecular beam source is placed away from the shaft by a distance larger than the distance between the substrate mounting position and the axis, and the platen is A molecular beam deposition apparatus, wherein the molecular beam deposition apparatus is arranged apart from the molecular beam source by a distance larger than the axial distance. 2. A device according to claim 1, characterized in that it comprises a plurality of molecular beam sources, which are arranged equidistant from the axis and axially equidistant from the platen. Molecular beam deposition device. 3. The apparatus according to claim 1 or 2, wherein the axial distance from the molecular beam source to the platen is slightly longer than the distance from the shaft to the molecular beam source. Molecular beam deposition device. 4. The apparatus according to claim 3, wherein the distance from the axis to the substrate is about 0.6 times the distance from the axis to the molecular beam source. . 5. The apparatus according to any one of claims 1 to 4, wherein an analysis work chamber capable of vacuum, and the analysis work chamber and the growth work chamber are provided. 1. A molecular beam deposition apparatus, comprising: a first valve and a transportation means for transporting a platen between the analysis work chamber and the growth work chamber. 6. The apparatus according to claim 5, wherein the first and second work chambers for load / unload, the first work chamber for load / unload and the work chamber for analysis are provided. And a third valve between the growth work chamber and the second load / unload work chamber, wherein the transport means includes the first load / unload chamber. A molecular beam deposition apparatus for transporting a platen between a loading work chamber and the analysis work chamber, and between the growth work chamber and the second loading / unloading work chamber. . 7. The apparatus according to any one of claims 1 to 6, wherein each molecular beam source is provided so that each molecular beam is oriented in a substantially vertical direction. Molecular beam deposition device.