JPH0666381B2 - Wafer chuck method and apparatus - Google Patents
Wafer chuck method and apparatusInfo
- Publication number
- JPH0666381B2 JPH0666381B2 JP1122778A JP12277889A JPH0666381B2 JP H0666381 B2 JPH0666381 B2 JP H0666381B2 JP 1122778 A JP1122778 A JP 1122778A JP 12277889 A JP12277889 A JP 12277889A JP H0666381 B2 JPH0666381 B2 JP H0666381B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck plate
- gas
- periphery
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 6
- 235000012431 wafers Nutrition 0.000 description 34
- 238000004140 cleaning Methods 0.000 description 7
- 210000000078 claw Anatomy 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920004943 Delrin® Polymers 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体ウエハ等のウエハチヤツク方法及び装
置に関する。The present invention relates to a wafer chucking method and apparatus for semiconductor wafers and the like.
（従来の技術） 半導体ウエハ、ガラス板、アルミナ、水晶板、セラミツ
ク板、サフアイヤ板その他のウエハを洗浄、乾燥した
り、各種の塗布等を行つたりするため、ウエハをチヤツ
クする装置が種々用いられている。例えば、スクラビン
グ装置では、ウエハを真空ポンプによつてチヤツクプレ
ート上に密着させ、表面から洗浄液やジエツト水流を噴
射してブラシ洗浄をしているが、裏面が汚れたり、吸着
作用のためにウエハのセンター部が歪んだりするおそれ
がある。また、機械的にウエハの周縁を把持するメカニ
カルチヤツクでは、ウエハの裏面に水がまわり込んで付
着するという問題があつた。(Prior Art) Various wafer chucking devices are used to clean and dry semiconductor wafers, glass plates, alumina plates, quartz plates, ceramic plates, sapphire plates and other wafers, and to apply various coatings. Has been. For example, in a scrubbing device, a wafer is brought into close contact with a chuck plate by a vacuum pump, and a cleaning liquid or jet water stream is jetted from the front surface for brush cleaning. The center part of may be distorted. Further, in the mechanical chuck that mechanically grips the peripheral edge of the wafer, there is a problem that water wraps around and adheres to the back surface of the wafer.
（発明の解決課題） 本発明はそのような実情に鑑み、ウエハを載置するだけ
で簡単に支持することができるようにすると共にウエハ
の裏面に洗浄水がまわり込んだり、汚染されることがな
いようなウエハチヤツク方法及び装置を提供しようとす
るものである。(Problems to be Solved by the Invention) In view of such circumstances, the present invention makes it possible to easily support a wafer simply by placing it, and at the same time, the back surface of the wafer may be contaminated with cleaning water or contaminated. The present invention seeks to provide such a wafer chucking method and apparatus.
（課題解決の手段） 本発明は、上記の目的を達成するよう、ウエハをチヤツ
クプレート上に間隙をあけて載置し、該ウエハの裏面に
中央から周辺に向けて気体を噴出し、該ウエハをチヤツ
クプレート面に吹寄せつつ該チヤツクプレートを回転す
るようにしたウエハチヤツク方法が提供される。(Means for Solving the Problems) According to the present invention, in order to achieve the above object, a wafer is placed on a chuck plate with a gap, and a gas is jetted from the center to the periphery on the back surface of the wafer, There is provided a wafer chucking method in which a wafer is blown onto the surface of a chuck plate and the chuck plate is rotated.
（実施例） 図において、チヤツクプレート(1)は、円板状に形成さ
れ、モーター(2)の軸(3)にボス部(4)をねじ着して回転
可能に設けられている。該チヤツクプレート(1)の周囲
には、ウエハ(5)の周辺を担持するよう複数の支持片(6)
を形成してあり、該支持片によつてウエハ(5)はチヤツ
クプレートとの間に狭い間隙をあけて載置される。該間
隙は、後記するように気体の噴流によつてウエハを吹寄
せることができるよう約0.2〜３０mmに形成するとよ
い。該支持片(6)は、ポリアセタール（デルリン）で作
られているがその他の耐食性、耐薬品性のある合成樹脂
材料、金属材料等で作ることができ、上記ウエハを載置
する係止肩(7)を有する。該係止肩(7)は、第３図に示す
ように、下方にわずか傾斜させてあり、また、上方に立
上る支承縁(8)と該支承縁(8)の上端から斜め外方へ傾斜
する案内面(9)を設けてある。該案内面(9)の傾斜角度
は、上方からウエハ(5)を落し込んだとき、該ウエハを
的確に係止肩(7)へ導くことができるような角度、例え
ば約１５度程度に形成してある。上記支承縁(8)は、第
１図に示すように、平面からみて直線状に形成してある
が、排水性を考慮して鋭角に、例えば第４図に示すよう
に約９０度に屈曲させて設けることもできる。(Embodiment) In the drawings, the check plate (1) is formed in a disc shape, and is rotatably provided by screwing a boss portion (4) onto a shaft (3) of a motor (2). Around the chuck plate (1), a plurality of supporting pieces (6) are provided so as to carry the periphery of the wafer (5).
The supporting piece allows the wafer (5) to be placed with a narrow gap between it and the chuck plate. The gap may be formed to have a thickness of about 0.2 to 30 mm so that the wafer can be blown by a jet of gas as described later. The support piece (6) is made of polyacetal (Delrin), but can be made of other synthetic resin material, metal material or the like having corrosion resistance and chemical resistance. 7). As shown in FIG. 3, the engaging shoulder (7) is slightly inclined downward, and the supporting edge (8) rising upward and the slanting outward from the upper end of the supporting edge (8). An inclined guide surface (9) is provided. The inclination angle of the guide surface (9) is formed such that when the wafer (5) is dropped from above, the wafer can be accurately guided to the locking shoulder (7), for example, about 15 degrees. I am doing it. As shown in FIG. 1, the support edge (8) is formed in a straight line when viewed from a plane, but is bent at an acute angle in consideration of drainage, for example, at about 90 degrees as shown in FIG. It can also be provided.
上記支持片(6)は、ねじ(10)でチヤツクプレート(1)に取
付けてあり、図において、該支持片間のプレートの一部
には切欠部(11)を形成してあるが、該切欠部を設けない
円板状に形成してもよい。なお、該チヤツクプレート
(1)の、平面からみて横軸方向の一部には、直線状の爪
受入部(12)を設け、ウエハをチヤツクから取り出す際、
メカニカル爪（図示略）をウエハ周縁に入り込めるよう
にしてある。The supporting piece (6) is attached to the chuck plate (1) with a screw (10), and in the figure, a notch (11) is formed in a part of the plate between the supporting pieces. It may be formed in a disc shape without the notch. In addition, the check plate
In (1), a linear claw receiving portion (12) is provided in a part in the horizontal axis direction when viewed from the plane, and when the wafer is taken out from the chuck,
A mechanical claw (not shown) can be inserted into the peripheral edge of the wafer.
上記チヤツクプレート(1)の中央には、周辺に向けて気
体を噴出するよう噴出口(13)を設けてある。該噴出口(1
3)の開口部は、チヤツクプレート(1)の上面より深い位
置にあり、かつ縁部に丸味(14)を形成し吹き出し音を防
ぐと共に吸着力を増すようにしてある。上記噴出口(13)
の内端には、テフロン系の保護チューブ(15)を嵌着して
あり、該チューブ(15)は上記モーター軸(3)を貫通して
延びクリーンＮ２ガス等の気体の噴出源（図示略）に連
絡している。該保護チユーブにより、Ｎ２ガスは金属に
接することなく噴出口(13)まで導かれる。なお、該噴出
口(13)部分は、ビス(16)によりチヤツクプレート(1)に
固着されている。A jet port (13) is provided at the center of the check plate (1) so as to jet gas toward the periphery. The spout (1
The opening of 3) is located deeper than the upper surface of the chuck plate (1) and has a rounded portion (14) at the edge so as to prevent blowing noise and increase the suction force. Above spout (13)
A Teflon-based protective tube (15) is fitted to the inner end of the tube, and the tube (15) extends through the motor shaft (3) to eject a gas such as clean N 2 gas (shown in the figure). (Omitted). The protective tube guides the N 2 gas to the ejection port (13) without contacting the metal. The jet port (13) is fixed to the check plate (1) with a screw (16).
而して、ウエハ(5)は、適宜の搬送手段でチヤツクプレ
ート(1)の上面に運んでから該チヤツクプレートを上昇
させて支持片(6)・・・間で受支するようにしたり、適
宜のメカニカル爪（図示略）で周縁を把持してチヤツク
プレート上に落し込むようにして支持片(6)・・・間で
支承する。このようにして、チヤツクプレート(1)上に
間隙をあけてウエハを載置したら、クリーンＮ２ガス等
の気体を噴出口(13)から周辺に向けて噴出すれば、ウエ
ハ(5)はベルヌイ方式によりチヤツクプレート面に吹寄
せられ、確実にチヤツクされる。その後、該チヤツクプ
レートを回転しながらウエハの表面に洗浄液や高圧ジエ
ツト水流を噴射し適宜洗浄ブラシで洗浄すればよい。こ
の際、洗浄液等の液体がウエハの裏面にまわり込もうと
しても、ウエハ裏面とチヤツクプレートの間にＮ２ガス
が周円状に吹き出しているため、裏面に付着することは
ない。Thus, the wafer (5) is carried to the upper surface of the chuck plate (1) by an appropriate carrying means, and then the chuck plate is raised to be supported between the supporting pieces (6). Alternatively, it is supported between the support pieces (6) ... by grasping the peripheral edge with an appropriate mechanical claw (not shown) and dropping it on the chuck plate. In this way, after the wafer is placed on the chuck plate (1) with a gap, if a gas such as clean N 2 gas is ejected from the ejection port (13) toward the periphery, the wafer (5) will be formed. The Bernoulli method blows against the surface of the check plate to ensure reliable checking. Then, a cleaning liquid or a high-pressure jet water stream may be jetted onto the surface of the wafer while rotating the chuck plate, and the cleaning brush may be appropriately cleaned. At this time, even if a liquid such as a cleaning liquid tries to get around the back surface of the wafer, the N 2 gas blows out in a circumferential circle between the back surface of the wafer and the chuck plate, so that it does not adhere to the back surface.
洗浄後は、スピンドライできる回転数までチヤツクプレ
ートを回転してウエハを乾燥し、上記メカニカル爪若し
くは搬送手段で運び出せばよい。After cleaning, the chuck plate may be rotated to a spin-rotatable rotation speed to dry the wafer, and the wafer may be carried out by the mechanical claws or the transfer means.
（発明の効果） 本発明は以上のように構成され、ウエハの裏面にクリー
ンＮ２ガス等を吹きつけてウエハ裏面に付着する水分を
除去すると共に該ウエハを支持片に確実に保持でき、ウ
エハ周縁まできれいに洗浄することができ、裏面を汚染
することもない。(Effects of the Invention) The present invention is configured as described above, and a clean N 2 gas or the like is blown onto the back surface of a wafer to remove moisture adhering to the back surface of the wafer, and the wafer can be reliably held on a support piece. It can be cleaned up to the periphery cleanly and does not contaminate the back surface.
図面は本発明の実施例を示し、第１図は平面図、第２図
は断面図、第３図は支持片部分の拡大断面図、第４図は
変形例の平面図である。 １……チヤツクプレート、３……モータ軸、５……ウエ
ハ、６……支持片、１３……噴出口The drawings show an embodiment of the present invention, FIG. 1 is a plan view, FIG. 2 is a sectional view, FIG. 3 is an enlarged sectional view of a supporting piece portion, and FIG. 4 is a plan view of a modified example. 1 ... Chuck plate, 3 ... motor shaft, 5 ... wafer, 6 ... supporting piece, 13 ... jet port
Claims (2)
をあけてウエハを載置し、該ウエハを上記チヤツクプレ
ートの中央から周辺に向けて噴出する気体により該チヤ
ツクプレート面に吹寄せつつ回転させることを特徴とす
るウエハチヤツク方法。1. A wafer is placed with a gap between it and a rotatable chuck plate, and the wafer is blown onto the surface of the chuck plate by a gas ejected from the center of the chuck plate toward the periphery. A wafer chucking method characterized by rotating while rotating.
ヤツクプレートの周囲にウエハの周辺を担持するよう複
数の支持片を形成しかつ該チヤツクプレートの中央に周
辺に向けて気体を噴出するよう噴出口を設けたウエハチ
ヤツク装置。2. A chuck plate is rotatably provided, a plurality of supporting pieces are formed around the chuck plate so as to support the periphery of the wafer, and a gas is ejected toward the periphery at the center of the chuck plate. Wafer chuck device with a jet outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1122778A JPH0666381B2 (en) | 1989-05-18 | 1989-05-18 | Wafer chuck method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1122778A JPH0666381B2 (en) | 1989-05-18 | 1989-05-18 | Wafer chuck method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02303047A JPH02303047A (en) | 1990-12-17 |
| JPH0666381B2 true JPH0666381B2 (en) | 1994-08-24 |
Family
ID=14844380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1122778A Expired - Lifetime JPH0666381B2 (en) | 1989-05-18 | 1989-05-18 | Wafer chuck method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666381B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005509275A (en) * | 2001-05-22 | 2005-04-07 | アプライド マテリアルズ インコーポレイテッド | Smooth substrate support member with multiple parts for CVD |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3452676B2 (en) * | 1995-02-15 | 2003-09-29 | 宮崎沖電気株式会社 | Device for removing particles on semiconductor wafer surface and method for removing particles on semiconductor wafer surface using the same |
| US6168697B1 (en) | 1998-03-10 | 2001-01-02 | Trusi Technologies Llc | Holders suitable to hold articles during processing and article processing methods |
| US6095582A (en) * | 1998-03-11 | 2000-08-01 | Trusi Technologies, Llc | Article holders and holding methods |
| KR100363326B1 (en) * | 2000-06-01 | 2002-11-30 | 한국디엔에스 주식회사 | Wafer chuck for spinning a wafer |
| JP2006086384A (en) * | 2004-09-16 | 2006-03-30 | Ses Co Ltd | Substrate processing equipment |
| JP4541824B2 (en) * | 2004-10-14 | 2010-09-08 | リンテック株式会社 | Non-contact type adsorption holding device |
| JP5013400B2 (en) * | 2006-09-29 | 2012-08-29 | 国立大学法人東北大学 | Coating film coating equipment |
| JP5243139B2 (en) * | 2008-07-31 | 2013-07-24 | 株式会社ディスコ | Laser processing apparatus and laser processing method |
| IT1398436B1 (en) * | 2010-01-27 | 2013-02-22 | Applied Materials Inc | HANDLING DEVICE FOR SUBSTRATES BY COMPRESSED AIR |
| JP2013175544A (en) * | 2012-02-24 | 2013-09-05 | Disco Abrasive Syst Ltd | Holding table |
| JP6456708B2 (en) * | 2015-02-03 | 2019-01-23 | 株式会社ディスコ | Grinding equipment |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51112463U (en) * | 1975-03-06 | 1976-09-11 | ||
| JPS5329550A (en) * | 1976-08-30 | 1978-03-18 | Nissin Electric Co Ltd | Protective device for ddc power system |
| JPS5828834A (en) * | 1981-08-12 | 1983-02-19 | Toshiba Corp | Developer used for photolithography |
| JPS5948938A (en) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | Wafer chuck |
| JPS5975641A (en) * | 1982-10-23 | 1984-04-28 | Seiko Epson Corp | Chucking device for semiconductor substrate |
| JPS6064436A (en) * | 1983-09-19 | 1985-04-13 | Fujitsu Ltd | Spin drier |
| JPS60110118A (en) * | 1983-11-18 | 1985-06-15 | Toshiba Corp | Method and apparatus for coating resist |
| JPS60113431A (en) * | 1983-11-24 | 1985-06-19 | Toshiba Corp | Processing equipment of semiconductor |
| JPS60142517A (en) * | 1983-12-28 | 1985-07-27 | Toshiba Corp | Semiconductor manufacturing apparatus |
| JPS6393127A (en) * | 1986-10-08 | 1988-04-23 | Hitachi Ltd | Uehachiyatsuk |
-
1989
- 1989-05-18 JP JP1122778A patent/JPH0666381B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005509275A (en) * | 2001-05-22 | 2005-04-07 | アプライド マテリアルズ インコーポレイテッド | Smooth substrate support member with multiple parts for CVD |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02303047A (en) | 1990-12-17 |
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