JPH0666522B2 - Distributed reflection type semiconductor laser - Google Patents
Distributed reflection type semiconductor laserInfo
- Publication number
- JPH0666522B2 JPH0666522B2 JP68687A JP68687A JPH0666522B2 JP H0666522 B2 JPH0666522 B2 JP H0666522B2 JP 68687 A JP68687 A JP 68687A JP 68687 A JP68687 A JP 68687A JP H0666522 B2 JPH0666522 B2 JP H0666522B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- waveguide layer
- semiconductor laser
- external waveguide
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 「産業上の利用分野」 この発明は光通信の光源等として用いられる分布反射型
半導体レーザに関する。The present invention relates to a distributed Bragg reflector semiconductor laser used as a light source for optical communication.
「従来の技術」 最近、分布反射型半導体レーザの一種として、BIG（Bun
dled Integrated Guides）レーザと呼ばれる新しいタ
イプの半導体レーザが開発されている。第３図は、この
BIGレーザの構成例を示す断面斜視図である。図におい
て、１はｎ−InP基板、３はInGaAsP活性導波路層、４は
ｐ−InP保護層、５はｐ−InGaAsP外部導波路層、６はｐ
−InPクラッド層、７はｐ−InGaAsPキャップ層、８はZn
（亜鉛）拡散領域、９はSiO２絶縁膜、10a,10bは各々金
属電極、11は分布ブラッグ反射器（回折格子）である。
また、12〜14は各々埋込層を構成するｐ−InP層、ｎ−I
nP層およびｐ−InGaAsP層である。また、図に示すＸは
活性領域、Ya,Ybは外部導波路領域である。"Prior art" Recently, as a kind of distributed reflection type semiconductor laser, BIG (Bun
A new type of semiconductor laser, called a dled Integrated Guides laser, is being developed. Figure 3 shows this
It is a cross-sectional perspective view showing a configuration example of a BIG laser. In the figure, 1 is an n-InP substrate, 3 is an InGaAsP active waveguide layer, 4 is a p-InP protective layer, 5 is a p-InGaAsP external waveguide layer, and 6 is p.
-InP clad layer, 7 p-InGaAsP cap layer, 8 Zn
(Zinc) diffusion region, 9 is a SiO 2 insulating film, 10a and 10b are metal electrodes, and 11 is a distributed Bragg reflector (diffraction grating).
In addition, 12 to 14 are p-InP layers and n-I, respectively, which form a buried layer.
an nP layer and a p-InGaAsP layer. Further, X shown in the drawing is an active region, and Ya and Yb are external waveguide regions.
このBIGレーザによれば、活性導波路層３と外部導波路
層５との間の結合を極めて良好に行うことができるの
で、反射や散乱等の発生をほとんどなくすことができ、
これによって、高効率で高安定な単一モードのレーザ発
振を行うことができる。According to this BIG laser, since the coupling between the active waveguide layer 3 and the external waveguide layer 5 can be performed extremely well, it is possible to almost eliminate the occurrence of reflection and scattering.
Thereby, highly efficient and highly stable single mode laser oscillation can be performed.
「発明が解決しようとする問題点」 ところで、上述したBIGレーザにおいては、外部導波路
層５が活性導波路層３の上方にも形成されるため、同外
部導波路層５をキャリア濃度1017〜1018cm−３程度のハ
イドープ層とする必要がある。しかしながら、外部導波
路層５をハイドープ層とすると、同層５において光吸収
が発生すると共に、第３図に破線矢印によって示すよう
に、外部導波路領域Ya,Ybを通るリーク電流が流れ、こ
のため、しきい値電流の低減および高効率化が困難であ
るという問題がある。[Problems to be Solved by the Invention] In the BIG laser described above, since the external waveguide layer 5 is formed above the active waveguide layer 3, the external waveguide layer 5 has a carrier concentration of 10 17 It is necessary to form a highly doped layer of about 10 18 cm -3 . However, if the external waveguide layer 5 is a highly doped layer, light absorption occurs in the same layer 5, and a leakage current flows through the external waveguide regions Ya and Yb as indicated by the broken line arrow in FIG. Therefore, it is difficult to reduce the threshold current and increase the efficiency.
この発明は上述した事情に鑑みてなされたもので、その
目的は、しきい値電流の低減および高効率化を図ったBI
Gタイプの分布反射型半導体レーザを提供することにあ
る。The present invention has been made in view of the above circumstances, and an object thereof is to reduce the threshold current and improve the efficiency of the BI.
It is to provide a G type distributed reflection type semiconductor laser.
「問題点を解決するための手段」 この発明は、外部導波路層をノンドープの半導体層によ
って形成し、かつ、上面電極から電流閉じ込め用の拡散
領域を活性領域の上部に形成したことを特徴としてい
る。"Means for Solving the Problems" The present invention is characterized in that the external waveguide layer is formed of a non-doped semiconductor layer, and a diffusion region for current confinement from the upper surface electrode is formed above the active region. There is.
「作用」 この発明によれば、外部導波路層をノンドープ層とする
ことによって、外部導波路層による光吸収を減少させて
いる。また、電流閉じ込め用の拡散領域を活性領域の上
部に形成することによって、上面電極から注入される電
流を活性導波路層に集中させ、もって、外部導波路領域
を通るリーク電流を防いでいる。[Operation] According to the present invention, by making the external waveguide layer a non-doped layer, light absorption by the external waveguide layer is reduced. Further, by forming the diffusion region for current confinement on the active region, the current injected from the upper surface electrode is concentrated in the active waveguide layer, thereby preventing the leak current passing through the external waveguide region.
「実施例」 以下、図面を参照してこの発明の一実施例について説明
する。第１図はこの発明の一実施例によるBIGレーザ
を、光射出方向を含む面において切断した断面図であ
る。なお、この図において、第３図の各部に対応する部
分には同一の符号が付してある。この図に示すBIGレー
ザが第３図に示す従来のものと異なる点は次の通りであ
る。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a BIG laser according to an embodiment of the present invention, taken along a plane including the light emission direction. In this figure, parts corresponding to those in FIG. 3 are designated by the same reference numerals. The BIG laser shown in this figure differs from the conventional one shown in FIG. 3 in the following points.
外部導波路層16がノンドープのInGaAsP層によって構
成されている。The external waveguide layer 16 is composed of a non-doped InGaAsP layer.
クラッド層17が、ｎ型のInPによって形成されている
（第３図の従来のもののクラッド層６はｐ型）。The cladding layer 17 is made of n-type InP (the conventional cladding layer 6 of FIG. 3 is p-type).
電極10aから活性導波路層の近傍、例えば保護層４に
達するZn拡散領域18が形成されている。A Zn diffusion region 18 is formed from the electrode 10a to the vicinity of the active waveguide layer, for example, the protective layer 4.
次に、この実施例によるBIGレーザの製造方法を第２図
を参照して説明する。Next, a method of manufacturing the BIG laser according to this embodiment will be described with reference to FIG.
まず、第２図（イ）に示すように、基板１の上に活性領
域となる活性導波路層３および保護層４を順次エピタキ
シャル成長させる。次に、第２図（ロ）に示すように、
選択エッチングにより、活性導波路層３および保護層４
の両側部を除去し、基板１の上面を露出させる。次に、
第２図（ハ）に示すように、（ロ）の工程によって露出
した基板１の上面に、エッチングにより分布ブラッグ反
射器11を形成する。次に、第２図（ニ）に示すように、
外部導波路層16,クラッド層17,キャップ層７を順次エピ
タキシャル成長させる。次に、従来の埋込工程、すなわ
ち、メサストライプの形成および埋込層12〜14（第３図
参照）の成長が行なわれる。次に、第１図に示すZn拡散
領域18が、Zn拡散によって形成され、次いで、保護層7,
電極10a,10bが形成される。First, as shown in FIG. 2 (a), an active waveguide layer 3 and a protective layer 4 to be active regions are sequentially epitaxially grown on a substrate 1. Next, as shown in FIG.
The active waveguide layer 3 and the protective layer 4 are selectively etched.
Both side portions of are removed to expose the upper surface of the substrate 1. next,
As shown in FIG. 2C, a distributed Bragg reflector 11 is formed by etching on the upper surface of the substrate 1 exposed in the step (B). Next, as shown in FIG.
The external waveguide layer 16, the cladding layer 17, and the cap layer 7 are sequentially epitaxially grown. Then, a conventional burying step, that is, formation of a mesa stripe and growth of burying layers 12 to 14 (see FIG. 3) are performed. Next, the Zn diffusion region 18 shown in FIG. 1 is formed by Zn diffusion, and then the protective layer 7,
Electrodes 10a and 10b are formed.
なお、上述した実施例は、基板１をｎ−InPとした場合
であるが、この発明は、ｐ−InP,GaAs等を基板１として
用いた場合も勿論適用することができるし、発振波長に
よっては、活性領域を３層以上の複層とすることもあ
る。Although the above-described embodiment is the case where the substrate 1 is n-InP, the present invention can be applied to the case where p-InP, GaAs or the like is used as the substrate 1 as well, and it depends on the oscillation wavelength. May have a multi-layered active region.
「発明の効果」 以上説明したように、この発明によれば、外部導波路層
をノンドープの半導体層によって形成し、かつ、上面電
極から電流閉じ込め用の拡散領域を活性領域の上部に形
成したので、光の吸収損失を減少させることができると
共に、外部導波路領域を通るリーク電流を減少させるこ
とができ、この結果、低しきい値，高効率の分布反射型
半導体レーザを得ることができる。[Advantages of the Invention] As described above, according to the present invention, the external waveguide layer is formed of the non-doped semiconductor layer, and the diffusion region for current confinement from the upper surface electrode is formed above the active region. The absorption loss of light can be reduced, and the leakage current passing through the external waveguide region can be reduced. As a result, a distributed reflection type semiconductor laser with low threshold and high efficiency can be obtained.
第１図はこの発明の一実施例の構成を示す断面図、第２
図は同実施例の製造方法を説明するための図、第３図は
従来のBIGレーザの構成を示す断面斜視図である。 １……基板、３……活性導波路層、４……保護層、11…
…分布ブラッグ反射器、16……外部導波路層、18……Zn
拡散領域。FIG. 1 is a sectional view showing the structure of an embodiment of the present invention, and FIG.
FIG. 3 is a view for explaining the manufacturing method of the same embodiment, and FIG. 3 is a sectional perspective view showing the structure of a conventional BIG laser. 1 ... Substrate, 3 ... Active waveguide layer, 4 ... Protective layer, 11 ...
… Distributed Bragg reflector, 16 …… External waveguide layer, 18 …… Zn
Diffusion area.
Claims (1)
くとも活性導波路層を含む活性領域と、該活性領域の前
後および上面に接してこれらを包むように形成された外
部導波路層と、前記外部導波路層の所定の部分に沿って
設けられた分布ブラッグ反射器と、上下面電極とを有す
る分布反射型半導体レーザにおいて、前記外部導波路層
をノンドープの半導体層によって形成し、かつ、前記上
面電極から電流閉じ込め用の拡散領域を前記活性領域の
上部に形成してなる分布反射型半導体レーザ。1. An active region including at least an active waveguide layer formed in a predetermined region on a semiconductor substrate, an external waveguide layer formed in contact with the front, back, and upper surfaces of the active region so as to wrap them. In a distributed Bragg reflector semiconductor laser having a distributed Bragg reflector provided along a predetermined portion of an external waveguide layer, and upper and lower electrodes, the external waveguide layer is formed of a non-doped semiconductor layer, and A distributed Bragg reflector semiconductor laser having a diffusion region for confining a current from an upper surface electrode formed on the active region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP68687A JPH0666522B2 (en) | 1987-01-06 | 1987-01-06 | Distributed reflection type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP68687A JPH0666522B2 (en) | 1987-01-06 | 1987-01-06 | Distributed reflection type semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63169090A JPS63169090A (en) | 1988-07-13 |
| JPH0666522B2 true JPH0666522B2 (en) | 1994-08-24 |
Family
ID=11480643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP68687A Expired - Lifetime JPH0666522B2 (en) | 1987-01-06 | 1987-01-06 | Distributed reflection type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666522B2 (en) |
-
1987
- 1987-01-06 JP JP68687A patent/JPH0666522B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63169090A (en) | 1988-07-13 |
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