JPH066791B2 - Low pressure vapor phase growth equipment - Google Patents
Low pressure vapor phase growth equipmentInfo
- Publication number
- JPH066791B2 JPH066791B2 JP60260876A JP26087685A JPH066791B2 JP H066791 B2 JPH066791 B2 JP H066791B2 JP 60260876 A JP60260876 A JP 60260876A JP 26087685 A JP26087685 A JP 26087685A JP H066791 B2 JPH066791 B2 JP H066791B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- substrate
- chamber
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は減圧気相成長（以下、ＬＰＣＶＤ）装置に関
し、特に金属膜及び金属シリサイド膜等の複数層膜の形
成時に威力を発揮するＬＰＣＶＤ装置に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a low pressure vapor deposition (hereinafter referred to as LPCVD) apparatus, and particularly to an LPCVD apparatus that exerts its power when forming a multi-layer film such as a metal film and a metal silicide film. It is about.
（従来技術） 従来のＬＰＣＶＤ装置では、第３図に示すような構造の
ものが代表的である。即ち、排気ポンプ２２を有し、ヒ
ーター２０で加熱される１個の真空チヤンバー２３の全
体が反応室を兼ね、その中に石英ボード２６に載せて収
容された１個以上の基板２５上に反応ガス導入系２１よ
り導入されるガスを使って、同一成膜条件で単一層の成
膜を行うものである。(Prior Art) A conventional LPCVD apparatus typically has a structure as shown in FIG. That is, the entire vacuum chamber 23 having the exhaust pump 22 and heated by the heater 20 also serves as a reaction chamber, and the reaction is performed on one or more substrates 25 mounted on the quartz board 26 therein. The gas introduced from the gas introduction system 21 is used to form a single layer under the same film formation conditions.
さて、現在の半導体装置の製造では複数層膜の形成の技
術は極めて重要（金属及び金属シリサイドの多層膜の有
用性については、“Structure of Selective Low Press
ure Chemically Vapor−Deposited Film of Tungsten” J.Electnochemical Soc.１３２（５）Ｍay１９８５by
Ｍ．Ｌ．Ｇｒｅｅｎ，Ｒ．Ａ．Ｌevy及び“配線用ブラ
ケットＣＶＤＷの解析”応物学会（秋季）３ａ−Ｖ−
８，１９８５陳、原らの文献が詳しい。）である。Now, the technology for forming multiple layers is extremely important in the current manufacturing of semiconductor devices. (For the usefulness of multiple layers of metal and metal silicide, see “Structure of Selective Low Press
ure Chemically Vapor-Deposited Film of Tungsten ”J. Electnochemical Soc. 132 (5) May 1985 by
M. L. Green, R.M. A. Levy and “Analysis of CVDW for Bracket for Wiring” The Society of Physical and Chemical Engineers (Autumn) 3a-V-
8,1985 Chen and Hara et al. ).
（発明が解決しようとする問題点） この従来の装置を用いて複数層膜（以下、多層膜ともい
う）の形成を行う場合には、多層膜は一般に各層で成膜
条件即ち反応温度，反応ガス流量及び圧力を異にするた
め，一層の成膜を終る度に，成膜条件を次層に適合した
ものに変化させる必要があり、そのため温度、ガス流量
を安定化させるのにかなりの待ち時間が必要であった。
更にまた前段の成膜に用いた反応ガス種の残留による汚
染が後段の成膜で問題となるという欠点があった。(Problems to be Solved by the Invention) When a multi-layer film (hereinafter, also referred to as a multi-layer film) is formed using this conventional apparatus, the multi-layer film generally has film-forming conditions such as reaction temperature, reaction Since the gas flow rate and pressure are different, it is necessary to change the film formation conditions to those suitable for the next layer after each film formation. Therefore, it is necessary to wait a long time to stabilize the temperature and gas flow rate. I needed time.
Furthermore, there is a drawback in that the contamination due to the residual reaction gas species used in the former film formation causes a problem in the latter film formation.
これを解決する装置としては、それぞれ独立した反応室
と排気ポンプを有する、真空チヤンバーを直列に連結し
た、いわゆる多室構造の装置が考えられたが、その構造
の装置では複数の排気ポンプが必要となるためコスト高
になるほか、装置の大型化、搬送系の複雑化が避けられ
ないという欠点があった。As a device to solve this, a so-called multi-chamber structure device in which vacuum chambers are connected in series, each having an independent reaction chamber and exhaust pump, was considered, but a device of that structure requires multiple exhaust pumps. As a result, the cost becomes high, and there is a drawback in that the size of the device and the complexity of the transport system are inevitable.
本発明は、これらの問題を解決し、多層膜を連続的に形
成させ、且つ各形成層の成膜条件を互に独立させ良品質
の多層膜を形成できるＬＰＣＶＤ装置の提供を目的とす
る。It is an object of the present invention to solve these problems and to provide an LPCVD apparatus capable of forming a multilayer film continuously and forming independent film formation conditions of each formation layer to form a high quality multilayer film.
（問題点を解決するための手段） 本発明は、真空チヤンバー内で複数層膜を形成しうる減
圧気相成長装置において排気ポンプを有する一個の真空
チヤンバー内に、それぞれ個別の反応ガス導入系をもつ
複数個の反応室と、 基板を載置しかつ該基板をしてそれら複数の反応室間を
移動せしめることのできる基板保持器とを具え、この基
板保持器は、前記反応室を形成する部材の一つであり、
且つ、各々の反応室が実用上独立した反応系を形成でき
る程度の隙間を持って、反応室を形成する他の部材に対
して配置されている構成を具えることによって前記目的
を達成したものである。(Means for Solving Problems) In the present invention, in a reduced pressure vapor phase growth apparatus capable of forming a multi-layer film in a vacuum chamber, a single vacuum chamber having an exhaust pump is provided with individual reaction gas introduction systems. A plurality of reaction chambers, and a substrate holder on which a substrate can be placed and which can be moved between the plurality of reaction chambers, the substrate holder forming the reaction chamber. Is one of the members,
Further, the above-mentioned object is achieved by providing a structure in which each reaction chamber is arranged with respect to other members forming the reaction chamber with a gap to the extent that a practically independent reaction system can be formed. Is.
（作 用） 上記のような構成にしているので一の反応室で一層の成
膜を行ない、それご終了したとき、基板保持器を動作さ
せることによって当該基板を他の反応室に移動させて次
層の成膜を行なうことができる。(Operation) Because of the above-mentioned configuration, one layer of film is formed in one reaction chamber, and when that is completed, the substrate holder is operated to move the substrate to another reaction chamber. The next layer can be formed.
（実施例） 第１図は本発明の実施例のＬＰＣＶＤ装置の概略の断面
図である。排気ポンプ２を有する真空チヤンバー３内に
は、互にい独立した２個の反応室９−１，９−２が設置
されている。各反応室を形成する内部チヤンバー４−
１，４−２と、それらチヤンバーの床となる基板保持器
としての回転板１０との間の隙間は僅か１〜２mmで一定
しており、この小さい適度のガスのコンダクタンスによ
って、実用上反応室９−１と反応室９−２は互いに独立
した反応系を構成している。基板５の温度も、ランプヒ
ーター８−１，８−２が各々独立に制御されていて、ガ
ラス窓７−１，７−２を経由し、回転板１０に穿たれた
孔１０−１，１０−２を通る熱線によって基板が加熱さ
れるため、両基板は互に異なる反応温度に独立的に設定
できるようになっている。(Embodiment) FIG. 1 is a schematic sectional view of an LPCVD apparatus according to an embodiment of the present invention. In the vacuum chamber 3 having the exhaust pump 2, two independent reaction chambers 9-1 and 9-2 are installed. Internal chamber 4 that forms each reaction chamber 4-
The gap between 1,4-2 and the rotary plate 10 as the substrate holder, which is the floor of the chamber, is constant at only 1 to 2 mm, and due to this small appropriate gas conductance, the reaction chamber is practically used. The reaction system 9-1 and the reaction chamber 9-2 are independent of each other. Regarding the temperature of the substrate 5, the lamp heaters 8-1 and 8-2 are independently controlled, and the holes 10-1 and 10 formed in the rotary plate 10 through the glass windows 7-1 and 7-2. Since the substrate is heated by the heat ray passing through −2, both substrates can be independently set to different reaction temperatures.
この実施例で、多層膜形成は次の如く行なわれる。こゝ
ではタングステンシリサイド膜を形成した後、その上に
純タングステン膜を連続的に形成する場合について述べ
ると、まず基板５は反応室９−１において回転板１０上
の保持板６上に載置され、反応ガス導入系１−１よりＷ
Ｆ6、ＳｉＨ4、Ｈｅを反応ガスとして導入し、ランプヒ
ーター８−１により反応温度を３５０℃とし第一層目の
タングステンシリサイド膜を基板上に５０ｎｍ形成す
る。その後回転板１０を１８０°回転させ、基板５を反
応室９−２に移して、反応ガス導入系１−２よりＷ
Ｆ6、Ｈ2、Ｈｅを反応ガスとして導入し、ランプヒータ
ー８−２を調節して反応温度を５００℃とし、第２層目
の純タングステン膜を基板上に１００ｎｍ追加形成させ
る。In this embodiment, multilayer film formation is performed as follows. Here, the case of forming a tungsten silicide film and then continuously forming a pure tungsten film thereon will be described. First, the substrate 5 is placed on the holding plate 6 on the rotating plate 10 in the reaction chamber 9-1. From the reaction gas introduction system 1-1
F 6 , SiH 4 , and He are introduced as reaction gases, the reaction temperature is set to 350 ° C. by the lamp heater 8-1, and the first-layer tungsten silicide film is formed to 50 nm on the substrate. After that, the rotary plate 10 is rotated by 180 °, the substrate 5 is transferred to the reaction chamber 9-2, and the reaction gas introduction system 1-2 drives the W
F 6 , H 2 , and He are introduced as reaction gases, the lamp heater 8-2 is adjusted to a reaction temperature of 500 ° C., and a second pure tungsten film is additionally formed to 100 nm on the substrate.
即ち反応室９−１は、タングステンシリサイド膜の専用
の成膜室であり、一方反応室９−２は純タングステン膜
の専用の成膜室としてそれぞれ独立して用いられ、反応
ガス流量、反応温度等の条件は夫々最適値に常に一定に
保たれて、相互は干渉し合うことなく連続的な多層膜形
成が可能となっている。That is, the reaction chamber 9-1 is a dedicated film forming chamber for the tungsten silicide film, while the reaction chamber 9-2 is independently used as a dedicated film forming chamber for the pure tungsten film. The above conditions are always kept constant at their optimum values, and continuous multilayer film formation is possible without mutual interference.
この実施例の構成によれば、反応室を小さくできるた
め、ガス放出のおそれのある各部材の表面積が小さくな
り反応室雰囲気のコンタミネーションが減少し、その一
方で、反応ガス消費効率が向上するとともに、基板以外
の表面への成膜が抑制されるという効果がある。According to the configuration of this embodiment, since the reaction chamber can be made small, the surface area of each member that may release gas is reduced and the contamination of the reaction chamber atmosphere is reduced, while the reaction gas consumption efficiency is improved. At the same time, there is an effect that film formation on the surface other than the substrate is suppressed.
さらに内部チヤンバーを４−１，４−２，……と増加
し、それに対応して回転板１０上の、それら内部チヤン
バーの床の数を増すことが可能である。また増設された
もののいくつかは基板の予備加熱用、冷却用または基板
交換室として（それらは内部チヤンバーが省略できるこ
とがある）用いることも可能である。） 上記で、回転板１０は、内部チヤンバー４−１，４−２
等の床として働くことともに、基板５の基板保持器とし
て機能しているが、これは第２Ａ図（断面図），第２Ｂ
図に示した装置を簡略化したものと考えられることがで
きる。ただし第２Ｂ図は第２Ａ図の基板保持器１００の
平面図である。この場合の内部チヤンバーの床と呼びう
るものはむしろ１１−１，１１−２である。Further, it is possible to increase the number of inner chambers to 4-1, 4-2, ... And correspondingly increase the number of floors of the inner chambers on the rotary plate 10. It is also possible to use some of the additional ones for preheating the substrate, for cooling, or as a substrate exchange chamber (these may be able to omit the internal chamber). ) In the above, the rotary plate 10 has the internal chambers 4-1 and 4-2.
It also functions as a floor of the substrate 5 and functions as a substrate holder for the substrate 5, which is shown in FIGS. 2A (cross-sectional view) and 2B.
It can be considered as a simplification of the device shown. However, FIG. 2B is a plan view of the substrate holder 100 of FIG. 2A. What can be called the inner chamber floor in this case is rather 11-1, 11-2.
なお、実施例には基板の移動を回転で行なうものを示し
たが、反応室の配置を直線上にして、基板の移設を直線
運動で行なわせることもできる。更にまた、実施例では
一つの反応室で一個の基板を処理するものを示したが、
基板は一個以上載置して処理してもよい。また、反応室
を移動させ基板を固定させるものも可能であって、本発
明は其の他様々に応用変形して実施しうる。Although the substrate is moved by rotation in the embodiment, it is also possible to arrange the reaction chamber on a straight line and move the substrate by a linear motion. Furthermore, in the example, one substrate is processed in one reaction chamber,
One or more substrates may be placed and processed. Further, it is also possible to move the reaction chamber and fix the substrate, and the present invention can be implemented by being modified in various ways.
（発明の効果） 本発明は、金属膜及び金属シリサイド膜等の多層膜形成
を経済的かつ高品質に、連続的に行うことができる。(Effects of the Invention) The present invention makes it possible to continuously form a multilayer film such as a metal film and a metal silicide film economically and with high quality.
第１図は本発明の実施例のＬＰＣＶＤ装置の概略の断面
図。 第２Ａ図は本発明の別の実施例の同様の図で、第２Ｂ図
はその基板保持器の平面図。 第３図は従来のＬＰＣＶＤ装置の概略の断面図である。 １−１，１−２……反応ガス導入系、２……排気ポン
プ、３……真空チヤンバー、４−１，４−２……内部チ
ヤンバー、５……基板、１０……基板保持器としての回
転板、１００……基板保持器、８−１，８−２……ラン
プヒーター。FIG. 1 is a schematic sectional view of an LPCVD apparatus according to an embodiment of the present invention. 2A is a similar view of another embodiment of the present invention, and FIG. 2B is a plan view of the substrate holder. FIG. 3 is a schematic sectional view of a conventional LPCVD apparatus. 1-1, 1-2 ... Reaction gas introduction system, 2 ... Exhaust pump, 3 ... Vacuum chamber, 4-1, 4-2 ... Internal chamber, 5 ... Substrate, 10 ... As substrate holder Rotating plate, 100 ... Substrate holder, 8-1, 8-2 ... Lamp heater.
Claims (2)
成しうる減圧気相成長装置において排気ポンプを有する
一個の真空チャンバー 内に、それぞれ個別の反応ガス導入系をもつ複数個の反
応室と、 基板を載置しかつ該基板をしてそれら複数の反応室間を
移動せしめることのできる基板保持器とを具え、この基
板保持器は、前記反応室を形成する部材の一つであり、
且つ、各々の反応室が実用上独立した反応系を形成でき
る程度の隙間を持って、反応室を形成する他の部材に対
して配置されていることを特徴とする減圧気相成長装
置。1. A vacuum chamber having an exhaust pump in a reduced pressure vapor phase growth apparatus capable of forming a multi-layer film on a substrate in a vacuum chamber, and a plurality of reaction chambers each having an individual reaction gas introduction system. And a substrate holder capable of mounting the substrate and moving the substrate between the plurality of reaction chambers, the substrate holder being one of the members forming the reaction chamber. ,
Moreover, the reduced pressure vapor phase growth apparatus is characterized in that each reaction chamber is arranged with respect to other members forming the reaction chamber with a gap enough to form a practically independent reaction system.
おり、前記基板の移動が、該円の中心を中心とする回転
移動で行なわれることを特徴とする特許請求の範囲第１
項記載の減圧気相成長装置。2. The plurality of reaction chambers are arranged on a single circle, and the movement of the substrate is performed by rotational movement around the center of the circle. 1
The reduced pressure vapor phase growth apparatus according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60260876A JPH066791B2 (en) | 1985-11-20 | 1985-11-20 | Low pressure vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60260876A JPH066791B2 (en) | 1985-11-20 | 1985-11-20 | Low pressure vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62120475A JPS62120475A (en) | 1987-06-01 |
| JPH066791B2 true JPH066791B2 (en) | 1994-01-26 |
Family
ID=17353978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60260876A Expired - Lifetime JPH066791B2 (en) | 1985-11-20 | 1985-11-20 | Low pressure vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH066791B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2775648B2 (en) * | 1989-08-10 | 1998-07-16 | アネルバ株式会社 | CVD method |
| US6002109A (en) * | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6133550A (en) * | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
| US6198074B1 (en) | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
| JP3064268B2 (en) | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | Film forming method and apparatus |
| JP3065039B2 (en) | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | Film forming method and apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165379A (en) * | 1984-02-09 | 1985-08-28 | Toshiba Mach Co Ltd | Method and apparatus for continuous-type vapor growth |
-
1985
- 1985-11-20 JP JP60260876A patent/JPH066791B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62120475A (en) | 1987-06-01 |
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