JPH0669041B2 - Short time heat treatment equipment - Google Patents
Short time heat treatment equipmentInfo
- Publication number
- JPH0669041B2 JPH0669041B2 JP59274622A JP27462284A JPH0669041B2 JP H0669041 B2 JPH0669041 B2 JP H0669041B2 JP 59274622 A JP59274622 A JP 59274622A JP 27462284 A JP27462284 A JP 27462284A JP H0669041 B2 JPH0669041 B2 JP H0669041B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat treatment
- shutter
- heater
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、短時間熱処理装置に関し、特にシリコンウェ
ハ等の半導体基板を枚葉に短時間熱処理する装置に係わ
る。TECHNICAL FIELD OF THE INVENTION The present invention relates to a short-time heat treatment apparatus, and more particularly to an apparatus for short-time heat treatment of a semiconductor substrate such as a silicon wafer into a single sheet.
短時間熱処理装置の熱源としては、赤外線ランプを使用
するものが主に開発され、面状ヒータを熱源としたもの
では、カーボンヒータが知られている。As a heat source for a short-time heat treatment apparatus, one using an infrared lamp has been mainly developed, and a carbon heater is known as one using a planar heater as a heat source.
しかしながら、上記赤外線ランプを用いてシリコンウェ
ハを加熱した場合、赤外線の吸収係数がシリコン単結
晶、多結晶シリコン、シリコン酸化膜、燐化ガラス（PS
G）によって異なり、かつシリコン中の不純物濃度や燐
化ガラス中の燐濃度によっても異なり、更に光の屈折、
反射、干渉等が発生し、実デバイス構造を有したシリコ
ンウェハでは均一に昇温させることは非常に困難であっ
た。However, when a silicon wafer is heated using the above infrared lamp, the infrared absorption coefficient of silicon single crystal, polycrystalline silicon, silicon oxide film, phosphide glass (PS
G), and also depending on the impurity concentration in silicon and the phosphorus concentration in phosphide glass,
Due to reflection, interference, etc., it was very difficult to uniformly raise the temperature in a silicon wafer having an actual device structure.
一方、面状ヒータでは、輻射、対流が利用でき、赤外線
ランプのような熱の不均一性は発生しない。しかしなが
ら、ヒータがカーボンから形成され、雰囲気中に酸化性
ガスが残留していると、燃焼してしまうため、高真空中
でないと実際上は使用が困難で、面状ヒータの輻射、対
流の長所が充分に活かしきれなかった。On the other hand, in the planar heater, radiation and convection can be used, and heat nonuniformity unlike the infrared lamp does not occur. However, since the heater is made of carbon and burns if the oxidizing gas remains in the atmosphere, it is practically difficult to use unless in a high vacuum, and the advantages of radiation and convection of the planar heater. I couldn't make the most of it.
本発明は、シリコンウェハ等の被熱処理基板を短時間で
均一に昇温し得る短時間熱処理装置を提供しようとする
ものである。The present invention aims to provide a short-time heat treatment apparatus capable of uniformly heating a heat-treated substrate such as a silicon wafer in a short time.
本発明は、 被熱処理基板を支持する支持部材と、 前記支持部材上の前記基板と対向して配置されるシリコ
ンカーバイトを主材料とする面状ヒータと、 前記支持部材と前記面状ヒータの間に配置され、非遮蔽
部を挟んで少なくとも両側に遮蔽部を有する形状をな
し、一方向への移動により前記非遮蔽部で開動作を行
い、前記両側の遮蔽部で閉動作を行うシャッタと を具備したことを特徴とする短時間熱処理装置である。The present invention provides a support member for supporting a substrate to be heat-treated, a planar heater mainly made of silicon carbide arranged facing the substrate on the support member, and the support member and the planar heater. A shutter which is arranged in between and which has a shape having shielding portions on at least both sides of the non-shielding portion, and which performs an opening operation by the non-shielding portion and a closing operation by the shielding portions on both sides by moving in one direction. A short-time heat treatment apparatus comprising:
上述した本発明によれば、前記シャッタを一方向に移動
させて開動作を行う際、前記面状ヒータにより前記被熱
処理基板、例えばシリコンウェハを所定温度まで急速に
加熱できるため、既述したように前記被熱処理基板を短
時間で均一に昇温できる。According to the present invention described above, when performing the opening operation by moving the shutter in one direction, the planar heater can rapidly heat the substrate to be heat-treated, for example, a silicon wafer to a predetermined temperature. In addition, the temperature of the substrate to be heat-treated can be raised uniformly in a short time.
以下、本発明の実施例を第１図（ａ）〜（ｃ）及び第２
図を参照して説明する。Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 (a) to (c) and the second embodiment.
It will be described with reference to the drawings.
図中の１は、被熱処理基板を支持するための支持部材で
あり、該支持部材１は上端を正方形に配置し、かつ２回
屈曲させた４本の支持棒２から構成されている。この支
持部材１の上方には、高純度のシリコンカーバイドから
なる主面状ヒータとしての第１の円板状ヒータ31が配置
されている。また、前記支持棒２の屈曲部内には前記第
１の円板状ヒータ31と平行に対向する高純度のシリンカ
ーバイドからなる第２の円板状ヒータ32が配置されてい
る。なお、前記各円板状ヒータ31、32は、例えば気相成
長法で製造された直径200mmのものであり、かつこれら
ヒータ31、32は50mmの間隔をあけて対向されている。そ
して、前記支持部材１と第１の円板状ヒータ31の間には
シャッタ４が介在されている。このシャッタ４は、被遮
蔽部を挟んで少なくとも両側に遮蔽部を有する形状をな
し、具体的には第２図に示すように約600mm×200mmの長
方形で、中央部に非遮蔽部としての直径150mmの穴５が
開口された形状を有する。こうした支持部材１、第１、
第２の円板状ヒータ31、32及びシャッタ４は図示しない
チャンバ内に配置されている。Reference numeral 1 in the figure is a support member for supporting the substrate to be heat-treated, and the support member 1 is composed of four support rods 2 each having a square upper end and bent twice. This is above the support member 1, a first disc-shaped heater 3 1 of the main surface shape heater made of high purity silicon carbide is disposed. Further, in the bent portion of the support rod 2, a second disk-shaped heater 3 2 made of high-purity syrincer bide is arranged so as to face the first disk-shaped heater 3 1 in parallel. The disk-shaped heaters 3 1 and 3 2 are, for example, 200 mm in diameter manufactured by a vapor phase growth method, and the heaters 3 1 and 3 2 are opposed to each other with a space of 50 mm. . Then, the shutter 4 is interposed between the supporting member 1 and the first disc-shaped heater 3 1. The shutter 4 has a shape having shielding portions on at least both sides of the shielded portion, and is specifically a rectangle of about 600 mm × 200 mm as shown in FIG. 2, and has a diameter as a non-shielding portion at the center. It has a shape in which a hole 5 of 150 mm is opened. Such support member 1, first,
The second disk-shaped heater 3 1, 3 2 and shutter 4 are placed in a chamber (not shown).
次に、上述した短時間熱処理装置の作用を第１図（ａ）
〜（ｃ）を参照して説明する。まず、同図（ａ）に示す
ようにシャッタ４を閉じた状態で、第１、第２の円板状
ヒータ31、32を共に昇温させ、図示しないホルダによっ
て被熱処理基板５を支持部材１の４本の支持棒２上にロ
ードする。Next, the operation of the short-time heat treatment apparatus described above will be described with reference to FIG.
This will be described with reference to (c). First, the support in the closed state of the shutter 4 as shown in FIG. 6 (a), first, to the second disk-shaped heater 3 1, 3 together heated 2, the thermally treated substrate 5 by an unshown holder Load on the four support bars 2 of the member 1.
第１、第２の円板状ヒータ31、32が共に充分に昇温した
ら、同図（ｂ）に示すようにシャッタ４をその穴５が前
記基板６に対応するように左方向に移動させて、シャッ
タ４を開き、基板６を第１、第２の円板状ヒータ31、32
により昇温させ、熱処理する。熱処理温度及び時間は、
熱処理対象（例えば燐化ガラス膜の溶融、イオン注入さ
れた不純物の活性化、気相成長法で形成されたシリコン
酸化膜のデンシファイ等）によって異なるが、概略1100
〜1200℃で、５〜20秒間の条件に設定する。First, when the second disc-shaped heater 3 1, 3 2 is sufficiently heated together, the shutter 4 as shown in FIG. 2 (b) to the left so that the hole 5 corresponding to the substrate 6 The shutter 4 is opened by moving the substrate 6 and the substrate 6 is moved to the first and second disk heaters 3 1 , 3 2.
Then, the temperature is raised and heat treatment is performed. The heat treatment temperature and time are
Depending on the heat treatment target (eg melting of phosphide glass film, activation of ion-implanted impurities, densification of silicon oxide film formed by vapor phase growth method, etc.), it is approximately 1100
Set at ~ 1200 ℃ for 5-20 seconds.
所要の熱処理が完了すると、同図（ｃ）に示すようにシ
ャッタ４を更に左方向に移動させてシャッタ４を閉じ、
図示しないホルダによって基板６を支持部材１の支持棒
２から前記シャッタ４の動き対し直交する方向にアンロ
ードする。When the required heat treatment is completed, the shutter 4 is moved further to the left as shown in FIG.
The substrate 6 is unloaded from the support rod 2 of the support member 1 in a direction orthogonal to the movement of the shutter 4 by a holder (not shown).
しかして、本発明によれば第１の円板状ヒータ31として
耐酸化性の優れたシリコンカーバイドで形成することに
より、酸化性ガスを含む大気中での熱処理が可能とな
る。その結果、板状ヒータの特徴である輻射、対流が充
分に活かされ、かつ昇温速度を高くできるため、被熱処
理基板６を短時間で均一に加熱できる。事実、第１図
（ａ）〜（ｃ）の熱処理装置を使用して基板６の面内均
一性を調べたところ、±３％以内に納めることが可能で
あった。Therefore, according to the present invention, by forming the first disk-shaped heater 31 with silicon carbide having excellent oxidation resistance, it becomes possible to perform heat treatment in the atmosphere containing an oxidizing gas. As a result, the radiation and convection, which are features of the plate-shaped heater, can be fully utilized and the rate of temperature rise can be increased, so that the substrate 6 to be heat-treated can be uniformly heated in a short time. In fact, when the in-plane uniformity of the substrate 6 was examined using the heat treatment apparatus shown in FIGS. 1 (a) to 1 (c), it was possible to set it within ± 3%.
また、支持部材１内に第２の円板状ヒータ32を配置し、
第１の円板状ヒータ31で被熱処理基板６を加熱する前に
プレヒートすれば、シャッタ４の開放後の第１の円板状
ヒータ31による所定の温度まで昇温する時間を短縮で
き、より一層の短時間熱処理が可能となる。Further, the second disk-shaped heater 3 2 disposed within the support member 1,
If preheating prior to heating the heat-treated substrate 6 in the first disc-shaped heater 3 1, reduces the time of raising the temperature to a predetermined temperature by the first disk-shaped heater 3 1 after opening of the shutter 4 Further, it becomes possible to perform heat treatment for a shorter time.
更に、前記形状のシャッタ４を一方向（例えば左方向）
に移動させて開閉を行えば、その非遮蔽部である穴５に
よる被熱処理基板６の加熱時間が各点において同一とな
るため、基板６面内の熱処理による均一性を向上でき
る。これを前述した第１図（ａ）〜（ｃ）を参照して具
体的に説明する。ここで、前記シャッタ４の穴５の左端
をLs、右端をRs、前記基板６の左端をＬ、右端をＲとし
て説明する。まず、第１図（ａ）から第１図（ｂ）の状
態にシャッタ４を左方向（矢印方向）に移動させる開動
作に際し、シャッタ４の穴５の左端Lsが最初に基板６の
右端Ｒに対向して第１の円板状ヒータ31で加熱され、同
基板６の左端Ｌが最後にシャッタ４の穴５の左端Lsに対
向して同ヒータ31で加熱される。つまり、第１図（ａ）
から第１図（ｂ）までのシャッタ４による開動作過程に
おいて、基板６の左端Ｌは加熱時間が最も短く、右端Ｒ
側に向かうほど加熱時間が長くなる。一方、第１図
（ｂ）から第１図（ｃ）の状態にシャッタ４を同一の方
向（左方向）に移動させる閉動作に際し、シャッタ４の
穴５の右端Rsが最初に基板６の右端Ｒに対向して遮蔽さ
れ、同基板６の左端Ｌが最後にシャッタ４の穴５の右端
Rsに対向して遮蔽される。つまり、第１図（ｂ）から第
１図（ｃ）までのシャッタ４による閉動作過程におい
て、最初に遮蔽される基板６の右端Ｒは加熱時間が最も
短く、遮蔽が最後になる左端Ｌ側に向かうほど加熱時間
が長くなる。従って、非遮蔽部としての穴５を有するシ
ャッタ４を一方向（例えば左方向）に移動させて開閉を
行うことによって、開時に最も長い時間加熱される基板
６の右端Ｒは閉時に最も短い時間加熱され、開時に最も
短い時間加熱される基板６の左端Ｌは閉時に最も長い時
間加熱されるため、トータル的には基板６の右端Ｒ、左
端Ｌが共に同じ時間加熱されることになり、基板６面内
を均一に熱処理できる。特に、短時間熱処理においては
シャッタの開閉に際し、前記基板６の左端Ｌと右端Ｒで
の加熱開始時間、加熱終了時間の遅れは不均一加熱に多
大に影響するが、前述した形状のシャッタ４を一方向に
移動させて開閉することによって、シャッタ４の穴５と
基板６の左右端との位置関係による不均一加熱を解消し
て基板６面内を均一に短時間熱処理できる。しかも、基
板６のホルダによるロード及びアンロードをシャッタ４
の移動方向に対して直交させるようにすれば、基板６面
内のより一層の均一加熱が達成できる。Further, the shutter 4 having the above-mentioned shape is moved in one direction (for example, leftward).
When the substrate 5 to be heat-treated is moved to and opened and closed, the heating time of the substrate 6 to be heat-treated by the hole 5 which is the non-shielding portion becomes the same at each point, so that the uniformity of the heat treatment within the surface of the substrate 6 can be improved. This will be specifically described with reference to FIGS. 1A to 1C described above. Here, the left end of the hole 5 of the shutter 4 is Ls, the right end is Rs, the left end of the substrate 6 is L, and the right end is R. First, in the opening operation for moving the shutter 4 to the left (in the direction of the arrow) from the state shown in FIG. 1A to FIG. 1B, the left end Ls of the hole 5 of the shutter 4 is the right end R of the substrate 6 first. Is heated by the first disc-shaped heater 3 1 , and the left end L of the substrate 6 is finally opposed by the left end Ls of the hole 5 of the shutter 4 and heated by the heater 3 1 . That is, FIG. 1 (a)
1 to FIG. 1B, in the opening operation process by the shutter 4, the left end L of the substrate 6 has the shortest heating time and the right end R.
The heating time becomes longer toward the side. On the other hand, in the closing operation of moving the shutter 4 in the same direction (left direction) from the state of FIG. 1 (b) to FIG. 1 (c), the right end Rs of the hole 5 of the shutter 4 is the right end of the substrate 6 first. It is shielded so as to face R, and the left end L of the substrate 6 is finally the right end of the hole 5 of the shutter 4.
Shielded against Rs. That is, in the closing operation process by the shutter 4 shown in FIGS. 1B to 1C, the right end R of the substrate 6 which is first shielded has the shortest heating time and the shield is the last left end L side. The heating time becomes longer as it goes to. Therefore, by moving the shutter 4 having the hole 5 as the non-shielding portion in one direction (for example, the left direction) to open and close, the right end R of the substrate 6 which is heated for the longest time when opened is the shortest time when closed. The left end L of the substrate 6 that is heated and heated for the shortest time when opened is heated for the longest time when closed, so that the right end R and the left end L of the substrate 6 are both heated for the same time in total. The surface of the substrate 6 can be uniformly heat-treated. Particularly, in the short-time heat treatment, when the shutter is opened and closed, the delay of the heating start time and the heating end time at the left end L and the right end R of the substrate 6 greatly affects the non-uniform heating. By moving in one direction and opening / closing, non-uniform heating due to the positional relationship between the hole 5 of the shutter 4 and the left and right ends of the substrate 6 is eliminated, and the surface of the substrate 6 can be uniformly heat-treated for a short time. Moreover, loading and unloading of the substrate 6 by the holder is performed by the shutter 4
If it is made to be orthogonal to the moving direction of, the more uniform heating in the plane of the substrate 6 can be achieved.
更にまた、上記各部材が配置される図示しないチャンバ
内を減圧下にした状態で、基板のロードを行ない、その
後数10torr〜数100torrまでガスを導入し、基板の短時
間熱処理を行ない、つづいて、再度減圧にしてアンロー
ドを行なうようにしてもよい。こうした操作において、
酸化や窒化し易い処理面を持つ基板を使用し、その処理
面を酸化や窒化させたくない場合には、不活性ガスを導
入し、酸化や窒化させたい場合には反応性ガスや反応性
プラズマ等をチャンバ内に導入すればよい。Furthermore, in a state in which the inside of a chamber (not shown) in which the above-mentioned members are arranged is under reduced pressure, the substrate is loaded, then gas is introduced up to several tens torr to several hundreds of torr, and the substrate is briefly heat-treated. Alternatively, the pressure may be reduced again to perform unloading. In these operations,
If you use a substrate with a treated surface that is easily oxidized or nitrided and you do not want to oxidize or nitride the treated surface, introduce an inert gas, and if you want to oxidize or nitride, use a reactive gas or reactive plasma. Etc. may be introduced into the chamber.
なお、上記実施例ではシャツタを配置することにより、
第１の円板状ヒータによる短時間熱処理を行なったが、
シャッタの代わりに第１の円板状ヒータを支持部材に配
置された被熱処理基板に対して進退自在とし、短時間熱
処理時に第１の円板状ヒータを被熱処理基板に近接する
ように移動させる構造にしてもよい。In the above embodiment, by arranging the shirt,
A short time heat treatment was performed using the first disk heater,
Instead of the shutter, the first disk-shaped heater is movable back and forth with respect to the substrate to be heat-treated arranged on the supporting member, and the first disk-shaped heater is moved so as to be close to the substrate to be heat-treated during the short-time heat treatment. It may be structured.
上記実施例では、第２の円板状ヒータを支持部材の４本
の支持棒内に配置したが、これに限定されない。例え
ば、第３図に示すように支持部材１を構成する支持棒２
を真直ぐにし、これら支持棒２が挿入される孔７を第２
の円板状ヒータ32に開口し、該ヒータ32を上下動自在な
構造にしてもよい。また、第４図に示すように支持部材
１を、先端を正方形に配置した４本の分岐支持棒８と、
これら４本の分岐支持棒８を一体に連結する主支持棒９
とから構成し、該主支持棒９が挿入される孔７を第２の
円板状ヒータ32に開口し、該ヒータ32を上下動自在な構
造にしてもよい。In the above embodiment, the second disc-shaped heater is arranged in the four support rods of the support member, but the present invention is not limited to this. For example, as shown in FIG. 3, the support rod 2 that constitutes the support member 1
Straighten the holes and insert the support holes 2 into the holes 7
Discoid heater 3 of 2 to open and may be the heater 3 2 vertically movable structure. Further, as shown in FIG. 4, the support member 1 is composed of four branch support rods 8 each having a square tip end,
Main support bar 9 that integrally connects these four branch support bars 8
And consist of, the holes 7 main supporting rod 9 is inserted is opened in the second disc-shaped heater 3 2 may be the heater 3 2 vertically movable structure.
上記実施例では、面状ヒータを高純度シリコンカーバイ
ドから形成したが、モリブデンやタンタル等の高融点金
属の基材表面に高純度シリコンカーバイド膜を被覆した
構造の板状ヒータを用いてもよい。Although the planar heater is made of high-purity silicon carbide in the above-mentioned embodiments, a plate-shaped heater having a structure in which a high-purity silicon carbide film is coated on the surface of a high-melting point metal such as molybdenum or tantalum may be used.
以上詳述した如く、本発明によればシリコンカーバイド
を主材料とした板状ヒータを使用するこによって、シリ
コンウェハ等の被熱処理基板を短時間で均一に昇温で
き、更に酸素や窒素の雰囲気下での酸化や窒化を行なう
ことが可能な短時間熱処理装置を提供できる。As described above in detail, according to the present invention, by using the plate heater mainly made of silicon carbide, the substrate to be heat-treated such as a silicon wafer can be uniformly heated in a short time, and the atmosphere of oxygen or nitrogen can be further increased. It is possible to provide a short-time heat treatment apparatus capable of performing oxidization and nitriding below.
第１図（ａ）〜（ｃ）は本発明の一実施例を示す短時間
熱処理装置の概略断面図、第２図は第１図の熱処理装置
に使用されるシャッタの平面図、第３図及び第４図はそ
れぞれ本発明の他の実施例を示す断面図である。 １……支持部材、２……支持棒、31、32……円板状ヒー
タ、４……シャッタ、５……穴、６……被熱処理基板。1 (a) to 1 (c) are schematic sectional views of a short-time heat treatment apparatus showing an embodiment of the present invention, FIG. 2 is a plan view of a shutter used in the heat treatment apparatus of FIG. 1, and FIG. 4 and FIG. 4 are sectional views showing another embodiment of the present invention. 1 ... Support member, 2 ... Support rod, 3 1 , 3 2 ... Disk heater, 4 ... Shutter, 5 ... Hole, 6 ... Substrate to be heat-treated.
Claims (2)
ンカーバイドを主材料とする面状ヒータと、 前記支持部材と前記面状ヒータの間に配置され、非遮蔽
部を挟んで少なくとも両側に遮蔽部を有する形状をな
し、一方向への移動により前記非遮蔽部で開動作を行
い、前記両側の遮蔽部で閉動作を行うシャッタと を具備したことを特徴とする短時間熱処理装置。1. A support member for supporting a substrate to be heat-treated, a planar heater made of silicon carbide as a main material and arranged to face the substrate on the support member, and the support member and the planar heater. A shutter which is arranged in between and which has a shape having shielding portions on at least both sides of the non-shielding portion, and which performs an opening operation by the non-shielding portion and a closing operation by the shielding portions on both sides by moving in one direction. A short-time heat treatment apparatus comprising:
した状態で前記基板裏面の大部分を露出させるような形
状を有し、かつ前記基板の裏面側にシリコンカーバイド
を主材料とする別の面状ヒータを配置したことを特徴と
する特許請求の範囲第１項記載の短時間熱処理装置。2. The support member has a shape such that most of the back surface of the substrate is exposed while supporting the substrate to be heat-treated, and the back surface of the substrate is made of silicon carbide as a main material. 2. The short-time heat treatment apparatus according to claim 1, wherein the sheet heater is arranged.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59274622A JPH0669041B2 (en) | 1984-12-28 | 1984-12-28 | Short time heat treatment equipment |
| JP5485290A JPH02270329A (en) | 1984-12-28 | 1990-03-08 | Short time heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59274622A JPH0669041B2 (en) | 1984-12-28 | 1984-12-28 | Short time heat treatment equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5485290A Division JPH02270329A (en) | 1984-12-28 | 1990-03-08 | Short time heat treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156742A JPS61156742A (en) | 1986-07-16 |
| JPH0669041B2 true JPH0669041B2 (en) | 1994-08-31 |
Family
ID=17544285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59274622A Expired - Lifetime JPH0669041B2 (en) | 1984-12-28 | 1984-12-28 | Short time heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669041B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4849062B2 (en) * | 2007-12-10 | 2011-12-28 | トヨタ自動車株式会社 | Shock absorber piston with both steady throttle and pressure-sensitive valve opening characteristics |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159750A (en) * | 1978-06-07 | 1979-12-17 | Toshiba Corp | Silundum plate type heat generating body |
| JPS59109133U (en) * | 1983-01-12 | 1984-07-23 | 松下電子工業株式会社 | Infrared heat treatment equipment |
| JPS59109135U (en) * | 1983-01-12 | 1984-07-23 | 松下電子工業株式会社 | Infrared heat treatment equipment |
-
1984
- 1984-12-28 JP JP59274622A patent/JPH0669041B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61156742A (en) | 1986-07-16 |
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