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JPH0670888B2 - Method for manufacturing contact material for vacuum circuit breaker - Google Patents
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JPH0670888B2 - Method for manufacturing contact material for vacuum circuit breaker - Google Patents

Method for manufacturing contact material for vacuum circuit breaker

Info

Publication number
JPH0670888B2
JPH0670888B2 JP16573085A JP16573085A JPH0670888B2 JP H0670888 B2 JPH0670888 B2 JP H0670888B2 JP 16573085 A JP16573085 A JP 16573085A JP 16573085 A JP16573085 A JP 16573085A JP H0670888 B2 JPH0670888 B2 JP H0670888B2
Authority
JP
Japan
Prior art keywords
gas
powder
contact
circuit breaker
contact material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16573085A
Other languages
Japanese (ja)
Other versions
JPS6226723A (en
Inventor
脩 森宮
節雄 鈴木
悦夫 野田
功 奥富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16573085A priority Critical patent/JPH0670888B2/en
Publication of JPS6226723A publication Critical patent/JPS6226723A/en
Publication of JPH0670888B2 publication Critical patent/JPH0670888B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Switches (AREA)

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 この発明は大電流を開閉する電路開閉器の接点材、なか
んずく真空開閉器,遮断器の接点材とその製造法に関
し、特に放出ガスの少ない焼結型あるいは溶浸型接点の
製造方法に関する。
Description: TECHNICAL FIELD The present invention relates to a contact material for an electric circuit switch that opens and closes a large current, especially a vacuum switch, a contact material for a circuit breaker, and a method for manufacturing the same, and in particular, it emits less gas. The present invention relates to a method for manufacturing a sintered type or infiltration type contact.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

真空遮断器は小形,無保守,無公害性など、他の遮断器
に比べ優れた特徴を有するため、近年、次第にその適用
範囲が拡大され、回路電圧も36KV〜72KV以上にまで適用
されるようになつた。高耐圧化は接点材料の性質に依存
する。経験的には溶解法で製造していたCu−Bi系のよう
に低融点,高蒸気圧材(例えばBi)が接点の構成要素と
なつていると、高耐圧化にはやや難点があつた。
The vacuum circuit breaker has advantages such as small size, no maintenance, no pollution, etc. compared to other circuit breakers, so its application range has been gradually expanded in recent years, and the circuit voltage is expected to be applied from 36KV to 72KV or more. It became. Increasing the breakdown voltage depends on the properties of the contact material. Empirically, if a low melting point, high vapor pressure material (such as Bi) was used as a constituent element of the contact, such as the Cu-Bi system that was manufactured by the melting method, there were some difficulties in increasing the withstand voltage. .

そこでCu−W,Cu−Crのように粉末を焼結、あるいはW,Cr
の多孔質スケルトンにCu等を溶浸して接点を製造してい
た。しかし粉体はその体積に比して表面積が大きいの
で、その表面に付着したガスが多量にあるので、この吸
着ガスを無くす工程が接点の性質に重要な影響を与えて
きた。従来吸着ガスを取る工程として、真空中での焼結
処理(例えば、特開昭59-94320号公報に記載の工程)、
あるいは水素雰囲気中の処理(例えば特開昭59-171421
号公報に記載の工程)などが知られている。
Therefore, powder such as Cu-W, Cu-Cr, or W, Cr
Cu was infiltrated into the porous skeleton to produce the contact. However, since the powder has a large surface area compared to its volume, a large amount of gas adheres to the surface thereof, and the step of eliminating this adsorbed gas has had an important influence on the properties of the contact. Conventionally, as a process of removing the adsorbed gas, a sintering process in a vacuum (for example, the process described in JP-A-59-94320),
Alternatively, treatment in a hydrogen atmosphere (see, for example, JP-A-59-171421)
The process described in Japanese Patent Publication) is known.

しかし、接点の耐溶着性の優れているCu,W等はガス吸着
力が強く、上記の如き処理では十分吸着ガスを取ること
が出来ない。
However, Cu, W, etc., which have excellent welding resistance of the contacts, have a strong gas adsorption force and cannot sufficiently absorb the adsorbed gas by the above-mentioned treatment.

例えばW上に物理吸着されたO(酸素)原子はCO等の還
元性ガス中で2500℃で加熱しても取れないことが知られ
ている。
For example, it is known that O (oxygen) atoms physically adsorbed on W cannot be removed even if heated at 2500 ° C. in a reducing gas such as CO.

一方アークの陰極点の温度は3,000K〜3,500K程度と考え
られているので、電流遮断時には大量のガス放出が起り
大電流の遮断性能を損なつていた。
On the other hand, the temperature at the cathode point of the arc is considered to be about 3,000 K to 3,500 K, so a large amount of gas was released during current interruption, impairing the high current interruption performance.

例えば従来の方式の製造方法で製作したCu−Cr接点では
ガス含有量は約500〜2000ppmにも及ぶ。吸着ガスを取る
ために処理温度を2000K以上にすることは装置価格,接
点材の蒸気圧等の関連から実現困難であつた。
For example, a Cu-Cr contact manufactured by a conventional manufacturing method has a gas content of about 500 to 2000 ppm. It was difficult to raise the processing temperature to 2000K or higher to remove the adsorbed gas because of the equipment price and the vapor pressure of the contact material.

〔発明の目的〕[Object of the Invention]

本発明の目的は、上述した事情に鑑み、所望の溶着防止
性能,高耐圧性能を維持しつつアーク発生時の遊離ガス
の生成の少ない真空遮断器用接点材料の製造方法を提供
することにある。
In view of the above-mentioned circumstances, it is an object of the present invention to provide a method for manufacturing a contact material for a vacuum circuit breaker, which produces a small amount of free gas when an arc occurs while maintaining desired welding prevention performance and high pressure resistance performance.

〔発明の概要〕[Outline of Invention]

Cu−Cr接点材の製造で、ガス吸着の多いCrの処理可能温
度はその蒸気圧特性から高々1,200℃でこの条件で得ら
れた接点のガス含有量は約400〜700ppmであつた。
In the production of Cu-Cr contact material, the processable temperature of Cr, which adsorbs a large amount of gas, was 1,200 ° C at most due to its vapor pressure characteristic, and the gas content of the contact obtained under these conditions was about 400 to 700 ppm.

本発明に用いた接点製造方法では粉体または繊維体の表
面に付着している不純物、例えば油脂の除去、吸着ガス
の脱離を低温でも十分行えるように、活性ガス,還元性
ガスの励起,電離状態を利用した。
In the contact manufacturing method used in the present invention, impurities adhering to the surface of the powder or fibrous body, such as oil and fat, and desorption of adsorbed gas can be sufficiently excited even at low temperature by exciting active gas and reducing gas. The ionization state was used.

先ず粉体の表面に吸着している水は真空中で約200℃〜5
00℃の加熱で除去される。表面の油脂等の付着物は、例
えばCF4を含むArガス等の中でのガス放電雰囲気に粉体
を曝すことにより、取除ける。粉体表面上にさらに強固
に吸着、結合しているO(酸素原子)はH2あるいはCOを
含むArガス等の中でのガス放電雰囲気に粉体を曝すこと
によりほぼ完全に取り除かれる。
First, the water adsorbed on the surface of the powder is about 200 ℃ to 5 ℃ in vacuum.
It is removed by heating at 00 ℃. Deposits such as oil on the surface can be removed by exposing the powder to a gas discharge atmosphere in Ar gas containing CF 4 , for example. O (oxygen atoms) that are more strongly adsorbed and bonded on the powder surface can be almost completely removed by exposing the powder to a gas discharge atmosphere in Ar gas containing H 2 or CO.

このような処理を経た後、焼結あるいは溶浸によつて接
点の素材を製造する。
After such a treatment, the material of the contact is manufactured by sintering or infiltration.

〔発明の効果〕〔The invention's effect〕

本発明の製造方法によつて、ガス分析の結果ガス(主と
してO2,N2)含有量は約10ppm程度となり、溶解法で製造
した接点材例えばCu−Bi材とほぼ同程度の値が得られ
た。
According to the production method of the present invention, the gas analysis results in a gas (mainly O 2 and N 2 ) content of about 10 ppm, and a value almost the same as that of the contact material produced by the melting method, for example, Cu-Bi material, is obtained. Was given.

本発明の脱ガス処理は水素処理,真空処理に比べ低温で
行えるので、焼結,溶浸の温度も低温で行うことが可能
となつた。
Since the degassing treatment of the present invention can be performed at a lower temperature than hydrogen treatment and vacuum treatment, it is possible to perform the sintering and infiltration temperatures at a low temperature.

粉末冶金で製造する接点材ではAl,Ag,Cu等の高導電率材
料の耐溶着性を改善するためにCr,Mo,W等の高融点の粉
体あるいは繊維体を高導電率材に混合するものである。
したがつて、高融点の粉体,繊維体の構成材が高導電率
材中に拡散し固溶体あるいは金属間化合物を生成しない
方が望ましい。このために低温で焼結,溶浸することが
有利である。
In the case of contact materials manufactured by powder metallurgy, in order to improve the welding resistance of high conductivity materials such as Al, Ag and Cu, powders or fibrous materials with high melting points such as Cr, Mo and W are mixed with high conductivity materials. To do.
Therefore, it is desirable that the high melting point powder or fibrous material does not diffuse into the high conductivity material to form a solid solution or an intermetallic compound. For this reason, it is advantageous to sinter and infiltrate at a low temperature.

高導電率材の粉体と高融点材の粉体または繊維体をあら
かじめ混合・攪拌した後に焼結して製造する方法では、
本発明脱ガス処理法が特に有効である。また金属硼化物
においても低温での焼結,溶浸が特に重要である。高導
電材と金属硼化物とを混合し高温に維持しておくと硼化
物中の硼素(B)が高導材中に拡散し、新たな硼化物を
生成し、接点の電気伝導度を低下させる。
In the method of manufacturing by mixing the powder of the high-conductivity material and the powder of the high-melting-point material or the fibrous body in advance and then sintering,
The degassing treatment method of the present invention is particularly effective. Also, for metal borides, low temperature sintering and infiltration are particularly important. When a high-conductivity material and a metal boride are mixed and kept at a high temperature, boron (B) in the boride diffuses into the high-conductivity material to generate new boride, which lowers the electrical conductivity of the contact. Let

このように本発明の接点製造法によれば、接点中の遊離
ガスをほぼ完全に除去出来るばかりでなく、接点の低温
製造が可能となり接点の電気伝導度の低下も防ぐことが
可能となつた。
As described above, according to the contact manufacturing method of the present invention, not only the free gas in the contact can be removed almost completely, but also the contact can be manufactured at a low temperature and the decrease in the electric conductivity of the contact can be prevented. .

〔発明の実施例〕Example of Invention

第1図は本発明の実施装置の一例を示す。 FIG. 1 shows an example of an apparatus for carrying out the present invention.

真空炉1はバルブ(V5)2を通し、排気装置(EX)3に
より真空に排気される。接点の素材4はボート5に納め
る。このボートには素材の粉体あるいは繊維体を攪拌す
る装置(図示せず)と接続棒6を通してつらなつてい
る。また素材加熱ヒータ7がボート5の底部に設けてあ
り、ヒータは電源(PS1)8に接続されている。電極9
がボート中の素材4と対向して設置してある。電極9と
素材あるいはボートとの間に放電電源10が接続されてい
る。
The vacuum furnace 1 is evacuated to a vacuum by an exhaust device (EX) 3 through a valve (V 5 ) 2. The contact material 4 is placed in the boat 5. A device (not shown) for stirring powder or fibrous material is connected to the boat through a connecting rod 6. A material heating heater 7 is provided at the bottom of the boat 5, and the heater is connected to a power source (PS 1 ) 8. Electrode 9
Is installed facing the material 4 in the boat. A discharge power supply 10 is connected between the electrode 9 and the material or boat.

ガス供給系は三つのガスリザーバ(GR1)11,(GR2)12,
(GR3)13に各々希ガス等の不活性ガス,CF4等のハロゲ
ン元素を含むガス、H2,CO等の還元性ガスが貯えられて
いる。これらのガスは各々バルブ(V1)14,(V2)15,
(V3)16,およびバルブ(V4)17を通して真空炉中に供
給される。
The gas supply system consists of three gas reservoirs (GR 1 ) 11, (GR 2 ) 12,
The (GR 3 ) 13 stores an inert gas such as a rare gas, a gas containing a halogen element such as CF 4 , and a reducing gas such as H 2 and CO. These gases are used for valves (V 1 ) 14, (V 2 ) 15,
It is supplied into the vacuum furnace through (V 3 ) 16 and valve (V 4 ) 17.

先ず素材、例えばCu,Cr,Mo,Ti等の粉体あるいは繊維体
を混合しボート内に納める。バルブ(V1)〜(V4)は閉
じ真空炉を排気装置EXで1×10-4Torr以下の圧力に排気
する。
First, raw materials, for example, powders or fibrous bodies such as Cu, Cr, Mo and Ti are mixed and placed in a boat. The valves (V 1 ) to (V 4 ) are closed, and the vacuum furnace is evacuated to a pressure of 1 × 10 −4 Torr or less by the exhaust device EX.

加熱ヒータ7により素材4を200〜500℃に加熱し、素材
の表面に付着しているH2O(水)等を除去する。
The material 4 is heated to 200 to 500 ° C. by the heater 7 to remove H 2 O (water) and the like adhering to the surface of the material.

次に素材の前処理、例えばフレオン洗浄で十分除去出来
なかつた油脂等を除くため、ガスリザーバ(GR1)およ
び(GR2)から各々不活性ガス,ハロゲン元素を含むガ
スを適当な混合比でまぜ真空炉に導入し、放電電源(PS
2)10をONし、素材4と電極9との間に均一な放電を起
す。この放電によりガスは励起あるいは電離され、熱的
に加熱された状態よりはるかにエネルギーの高い状態に
なる。この状態のガスを素材表面に接触させることによ
り容易に表面層を除去することが可能となる。除去され
たものはハロゲン化物のガスとして排気装置(EX)3を
通じ外部に排出される。素材の表面が酸化層で覆われて
いるような場合はガスリザーバ(GR1),(GR2)から各
々不活性ガス,還元性ガスを適当な混合比でまぜ真空炉
に導入し、放電電源(PS2)をONし放電を起す。励起ガ
スと素材表面との接触を良くするため、攪拌装置によつ
て素材を良く攪拌する。ハロゲン化物のガス放電による
処理,還元性ガスのガス放電による処理の両方を行う
か、一方のみで完了するかは素材の性質による。
Next, in order to remove oils and fats that could not be sufficiently removed by pretreatment of the material, for example, Freon cleaning, mix the inert gas and the gas containing halogen element from the gas reservoirs (GR 1 ) and (GR 2 ) at an appropriate mixing ratio. Introduced into the vacuum furnace, discharge power supply (PS
2 ) Turn on 10 to generate uniform discharge between the material 4 and the electrode 9. This discharge excites or ionizes the gas, and the gas has a much higher energy than the thermally heated state. By bringing the gas in this state into contact with the surface of the material, the surface layer can be easily removed. The removed substance is discharged to the outside as a halide gas through the exhaust device (EX) 3. When the surface of the material is covered with an oxide layer, the inert gas and the reducing gas are mixed from the gas reservoirs (GR 1 ) and (GR 2 ) into the vacuum furnace at an appropriate mixing ratio, and the discharge power source ( Turn on PS 2 ) to cause discharge. In order to improve the contact between the exciting gas and the surface of the material, the material is well stirred by the stirring device. It depends on the nature of the material whether to perform both the gas discharge treatment of the halide and the gas discharge treatment of the reducing gas, or whether only one treatment is completed.

放電は電極を有しないマイクロ波放電を利用しても良
い。放電による処理を完了した後、真空炉中は高真空に
排気し、あるいはこの後不活性ガスを100Torr以下満た
す。
The discharge may use microwave discharge without electrodes. After the treatment by discharge is completed, the inside of the vacuum furnace is evacuated to a high vacuum, or thereafter, the inert gas is filled to 100 Torr or less.

次に加熱ヒータの温度を上げ素材を焼結し接点材を製造
を完了する。
Next, the temperature of the heater is raised to sinter the raw material to complete the production of the contact material.

Crを代表原料として具体的に述べる。Concretely, Cr will be described as a representative raw material.

通常、原料のガス量は、1000〜7000ppmである。これに
本発明技術を付与することによつて、第1表に示すよう
に、50〜100ppmになり1/20〜1/70に減少する。この原料
Crを使用し950℃の真空中で約1時間焼結して得たCrス
ケルトンの残存空孔中に銅を溶浸させて得た50%Cu−Cr
合金中のO2ガス量は10〜30ppmであつた。
Usually, the amount of raw material gas is 1000 to 7000 ppm. By applying the technique of the present invention to this, as shown in Table 1, it becomes 50 to 100 ppm, which is reduced to 1/20 to 1/70. This raw material
50% Cu-Cr obtained by infiltrating copper into the remaining pores of a Cr skeleton obtained by sintering Cr for about 1 hour in a vacuum at 950 ° C.
The amount of O 2 gas in the alloy was 10 to 30 ppm.

本発明効果を明らかにする為にこれと対比する実験とし
て本発明技術を付与しないCr粉末を使用し、上記焼結,
溶浸条件と同一の熱処理を行つて50%Cu−Cr合金を得
た。この合金中のO2ガス量は400〜3000ppmであり、本発
明技術を付与した50%Cu−Cr合金中のガスは、付与しな
い場合の1/40〜1/100であつた。(実施例−1) 他のTi,Cr3C2,TiC,CrB2,TiB2,CrN,TiN(実施例2〜
8)についても表−1のように同じ効果を得た。
In order to clarify the effect of the present invention, as an experiment to be compared with this, using Cr powder which does not give the technique of the present invention, the sintering,
The same heat treatment as the infiltration condition was performed to obtain a 50% Cu-Cr alloy. The amount of O 2 gas in this alloy was 400 to 3000 ppm, and the gas in the 50% Cu—Cr alloy to which the technique of the present invention was applied was 1/40 to 1/100 of that in the case where it was not applied. (Example -1) other Ti, Cr 3 C 2, TiC , CrB 2, TiB 2, CrN, TiN ( Example 2
With respect to 8), the same effect as shown in Table 1 was obtained.

尚、このようにして得た接点を使用して再点弧発生確率
を調査するといずれの材料に対してもその発生頻度が1/
2〜1/5に減少している。
When the probability of re-ignition occurrence is investigated using the contacts obtained in this way, the occurrence frequency is 1 /
It has decreased to 2 to 1/5.

上述効果は、実施例1−8に示した材料以外にも前記材
料群のいずれに対してもその効果が認められる。又、実
施例1−8では、高導電性材料としてCuの例を示した
が、Ag又はCu−Ag合金,Alなどに対しても同じ効果が得
られている。
The above-mentioned effects can be recognized for any of the above-mentioned material groups other than the materials shown in Example 1-8. In addition, in Example 1-8, although an example of Cu was shown as the high-conductivity material, the same effect can be obtained with Ag, Cu-Ag alloy, Al, or the like.

ガス励起のための代表的条件は全ガス圧1Torrでアルゴ
ンガス中に約10%(圧力比)のCCl4混合ガス中で直流放
電(放電電流密度10mA/cm3)で約20分処理後、再び
全ガス圧1Torrでアルゴン中に約10%(圧力比)のCO混
合ガス中で前と同様の放電で約1時間処理した。
A typical condition for gas excitation is a total gas pressure of 1 Torr and a direct current discharge (discharge current density 10 mA / cm 3 ) for about 20 minutes in a CCl 4 mixed gas of about 10% (pressure ratio) in argon gas, Again, the same discharge as before was carried out for about 1 hour in a CO mixed gas of about 10% (pressure ratio) in argon at a total gas pressure of 1 Torr.

ガス流量は処理開始直後は多く、処理終了近くでは少な
く絞つて行つた。
The gas flow rate was high immediately after the start of the treatment, and was narrowed down near the end of the treatment.

〔発明の他の実施例〕[Other Embodiments of the Invention]

第1図ではガスの励起,電離に放電を用いたが、レーザ
光、特に紫外域の光源としてエキシマレーザを用いる
と、脱ガス処理用ガス分子・原子は多光子吸収を励起,
電離される。さらにレーザ光は素材4の表面も活性化す
るので、励起ガスによる脱ガス作用は能率よく行われ
る。装置の概略を第2図に示す。レーザ発振装置18から
出たビームをビームエキスパンダ19で適当な角度に拡
げ、反射鏡20で反射させ、真空炉1の上部に設けたビー
ム照射窓21を通して真空炉内に導く。照射窓21は紫外域
の光を通す、石疫,サフアイヤ等が良い。ただしハロゲ
ン元素を含むガスを脱ガス処理に用いる場合は照射窓の
内側を保護膜コーテイングした方が窓材の寿命が長くな
る。
In Fig. 1, discharge was used to excite and ionize the gas. However, when an excimer laser is used as a laser beam, especially as a light source in the ultraviolet region, gas molecules and atoms for degassing excite multiphoton absorption,
Ionized. Further, since the laser beam also activates the surface of the material 4, the degassing action by the excited gas is efficiently performed. The outline of the apparatus is shown in FIG. The beam emitted from the laser oscillator 18 is expanded by a beam expander 19 to an appropriate angle, reflected by a reflecting mirror 20, and introduced into a vacuum furnace through a beam irradiation window 21 provided in the upper part of the vacuum furnace 1. Irradiation window 21 is preferably made of quarantine, sapphire, etc. that allows light in the ultraviolet range to pass through. However, when a gas containing a halogen element is used for the degassing treatment, the life of the window material becomes longer if the inside of the irradiation window is coated with a protective film.

第1図および第2図では接点の素材をあらかじめ決めら
れた混合比で混ぜ焼結する方法を示したが、高融点素材
の粉体,繊維体にAl,Ag,Cu等を溶浸させる方法でも、粉
体,繊維体の脱ガス処理は、基本的に第1図あるいは第
2図の方法によつて行える。
Fig. 1 and Fig. 2 show the method of mixing and sintering the material of the contact at a predetermined mixing ratio. The method of infiltrating Al, Ag, Cu, etc. into the powder or fibrous material of the high melting point material. However, the degassing treatment of the powder or fibrous body can be basically performed by the method shown in FIG. 1 or 2.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明による接点素材処理装置の構成図、第2
図は本発明の他の実施例を示す装置の構成図である。 1……真空炉、5……素材入れボート 6……攪拌装置、7……加熱装置 11……不活性ガス源、12……ハロゲン元素を含むガス源 13……還元性ガス源、9……放電電極 18……レーザ発振装置
FIG. 1 is a block diagram of a contact material processing apparatus according to the present invention, and FIG.
The figure is a block diagram of an apparatus showing another embodiment of the present invention. 1 ... vacuum furnace, 5 ... material loading boat 6 ... stirring device, 7 ... heating device 11 ... inert gas source, 12 ... gas source containing halogen element 13 ... reducing gas source, 9 ... … Discharge electrode 18 …… Laser oscillator

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】金属,炭化物,硼化物,窒化物,硅化物の
群から選ばれた少なくとも1つの粉体あるいは繊維体を
原料とし焼結又は溶浸法によつて製造する真空バルブ用
接点合金において、前記原料粉体または繊維体は、それ
をあらかじめ水素,一酸化炭素等の還元性ガスあるいは
ハロゲン元素を成分として含むガスの励起あるいは電離
状態の雰囲気中で処理することを特徴とする真空遮断器
用接点材料の製造方法。
1. A contact alloy for a vacuum valve produced by sintering or infiltration using at least one powder or fibrous material selected from the group of metals, carbides, borides, nitrides and silicates as a raw material. In the above, the raw material powder or fibrous body is treated in advance in an atmosphere of an excited or ionized state of a reducing gas such as hydrogen or carbon monoxide or a gas containing a halogen element as a component. Method of manufacturing contact material for equipment.
【請求項2】ガスの励起,電離状態を作る手段として、
直流あるいは交流ガス放電またはレーザ光の少なくとも
いずれか一つを用いることを特徴とする特許請求の範囲
第1項に記載の真空遮断器用接点材料の製造方法。
2. A means for producing an excited and ionized state of gas,
The method for producing a contact material for a vacuum circuit breaker according to claim 1, wherein at least one of DC or AC gas discharge and laser light is used.
【請求項3】粉体あるいは繊維体を200℃以上に加熱し
た状態で処理することを特徴とする特許請求の範囲第1
項もしくは第2項記載の真空遮断器用接点材料の製造方
法。
3. The method according to claim 1, wherein the powder or the fibrous body is treated while being heated to 200 ° C. or higher.
Item 2. A method for manufacturing a contact material for a vacuum circuit breaker according to Item 2 or Item 2.
【請求項4】粉体あるいは繊維体はAg,Cu,Ti,V,Cr,Zr,N
b,Mo,Hf,Ta,W,TiC,VC,Cr3C2,ZrC,NbC,MoC,HfC,TaC,WC,B
4C,TiN,ZrN,CrN,HfN,TaN,TiB2,VB2,CrB2,ZrB,NbB2,M
oB2,TaB,WB2,TiSi2,Cr3Si,ZrSi2,NbSi2,MoSi2,Ta
Si2,WSi2のいずれか一つ以上からなることを特徴とす
る特許請求の範囲第1項に記載の真空遮断器用接点材料
の製造方法。
4. The powder or fibrous material is Ag, Cu, Ti, V, Cr, Zr, N.
b, Mo, Hf, Ta, W, TiC, VC, Cr 3 C 2 , ZrC, NbC, MoC, HfC, TaC, WC, B
4 C, TiN, ZrN, CrN, HfN, TaN, TiB 2 , VB 2 , CrB 2 , ZrB, NbB 2 , M
oB 2 , TaB, WB 2 , TiSi 2 , Cr 3 Si, ZrSi 2 , NbSi 2 , MoSi 2 , Ta
The method for producing a contact material for a vacuum circuit breaker according to claim 1, characterized in that it comprises at least one of Si 2 and WSi 2 .
JP16573085A 1985-07-29 1985-07-29 Method for manufacturing contact material for vacuum circuit breaker Expired - Lifetime JPH0670888B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16573085A JPH0670888B2 (en) 1985-07-29 1985-07-29 Method for manufacturing contact material for vacuum circuit breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16573085A JPH0670888B2 (en) 1985-07-29 1985-07-29 Method for manufacturing contact material for vacuum circuit breaker

Publications (2)

Publication Number Publication Date
JPS6226723A JPS6226723A (en) 1987-02-04
JPH0670888B2 true JPH0670888B2 (en) 1994-09-07

Family

ID=15817980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16573085A Expired - Lifetime JPH0670888B2 (en) 1985-07-29 1985-07-29 Method for manufacturing contact material for vacuum circuit breaker

Country Status (1)

Country Link
JP (1) JPH0670888B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01110537A (en) * 1987-10-22 1989-04-27 Toray Ind Inc Prepreg containing spherical fine particle of resin
CN112735866B (en) * 2020-12-21 2023-04-07 哈尔滨东大高新材料股份有限公司 Cu-VB for low-voltage electrical apparatus 2 -La contact material and preparation method thereof

Also Published As

Publication number Publication date
JPS6226723A (en) 1987-02-04

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