JPH0671028B2 - Semiconductor element mounting method - Google Patents

Description

TECHNICAL FIELD The present invention relates to mounting of a multi-electrode, narrow-pitch LSI chip such as a microcomputer or a gate array.

(Conventional Technology) A conventional technology will be described with reference to FIG. Fig. 2 (a)
As shown in, the wiring board made of ceramic glass, etc.
An insulating resin 13 is applied to the surface of the conductor wiring 12 having the conductor wiring 12. Conductor wiring 12 is made of Cr-Au, Al, TiO, etc., and insulating resin 13
Is a thermosetting or ultraviolet curable epoxy resin, acrylic resin, or the like. Next, as shown in FIG. 2 (b),
The LSI chip 15 having the protruding electrodes 14 made of Au or the like is placed on the wiring board 11 so that the positions of the protruding electrodes 14 and the conductor wirings 12 are aligned.
Place the insulating resin 13 in the area coated with
The LSI chip 15 is pressurized at 16. At this time, the load to be applied is set to a size that can absorb the variation in the thickness of the protruding electrode 14 and the flatness of the wiring substrate 11 by the amount of deformation of the protruding electrode 14. Further, at this time, the insulating resin 13 is pushed out to the surroundings, and the protruding electrodes 14 of the LSI chip 15 and the conductor wirings 12 electrically contact with each other. Next, the insulating resin 13 is cured while the pressure tool 16 is pressed against the LSI chip 15, and the pressure tool 16 is released as shown in FIG. 2 (C). At this time, the LSI chip 15 is fixed to the wiring board 11 with the insulating resin 13, and the protruding electrode 14 of the LSI chip 15 and the conductor wiring 12 are electrically connected by contact.

(Problems to be Solved by the Invention) In the above conventional technique, the LSI chip is subjected to a variation in the thickness of the protruding electrode and a load capable of absorbing the flatness of the wiring board by the deformation amount of the protruding electrode, that is, a very large amount. Since the insulating resin is cured under load, the residual strain of the LSI chip and wiring board is large, and it acts to reduce the strain later.Therefore, deterioration of the characteristics of the LSI chip, high temperature and high humidity There is a defect that a connection failure occurs due to peeling of the insulating resin.

The object of the present invention is to eliminate the conventional drawbacks, and when the insulating resin is cured, the semiconductor element such as the LSI chip and the substrate are not distorted, and the characteristics of the LSI chip and the connection of the semiconductor element are prevented from causing a connection failure. Is to provide a method.

(Means for Solving the Problem) A method for mounting a semiconductor element of the present invention is to apply pressure to a semiconductor element such as an LSI chip with a high load to change the amount of deformation of the protruding electrode by varying the thickness of the protruding electrode, and The flatness is set to an amount that can be absorbed, and then the load is reset to a low value that does not cause distortion of the conductor element and wiring board while the pressure tool is in contact with the semiconductor element. It hardens.

(Operation) According to the present invention, since the load when curing the insulating resin is very low, distortion does not occur in the semiconductor element such as the LSI chip and the substrate, and the characteristic deterioration and connection failure of the LSI chip later occur. There is no fear of it occurring.

(Example) An example of the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing a mounting process of a semiconductor device of the present invention. In FIG. 1 (a), an insulating resin 3 is applied to a region including a conductor wiring 1 of a wiring board 2 having a conductor wiring 1 and made of glass, ceramics or the like. The wiring board 2 has a thickness of about 0.1 to 2.0 mm, the conductor wiring 1 is made of Cr-Au, Al, TiO, etc., and the thickness thereof is about 0.1 to 10 μm. The insulating resin 3 is a photo-curable type such as acrylic resin or epoxy resin, and is applied by using a dispenser, printing or the like. Next, as shown in FIG. 1B, the LSI chip 5 having the protruding electrode 4 made of Au, Cu, Al, In alloy or the like is placed so that the protruding electrode 4 and the conductor wiring 1 are aligned with each other. The wiring board 2 is installed in the area where the insulating resin 3 is applied. The protruding electrode 4 has a thickness of about 5 to 30 μm and a size of about 3 to 50 μ ² .

Next, the pressure tool 6 presses the LSI chip 5 with the first load 7. The setting of the first load 7 is a deformation amount at the time of pressurizing the protruding electrode 4, and needs to be a value that absorbs the variation in the thickness of the protruding electrode 4 and the flatness of the wiring board 2.
The deformation amount of the protruding electrode 4 is usually about 1 to 5 μ, and the first load 7 is, for example, 0.5 g / projecting electrode to 30 g / projecting electrode. At this time, since the first load 7 is very large, the LSI
Warpage and distortion occur in the chip 5 and the wiring board 2.
At this time, the insulating resin 3 is pushed out to the surroundings,
The protruding electrode 4 of the I-chip 5 and the conductor wiring 1 electrically contact with each other. Next, with the pressing tool 6 in contact with the LSI chip 5, a second load 8 is set so that warpage and distortion of the load LSI chip 5 and the wiring board 2 do not occur. The second load 8 is, for example, about 1/3 to 1/20 of the first load.

Next, the insulating resin 3 is cured while the LSI chip 5 is pressed by the pressing tool 6 with the second load 8. As for the curing method, when the wiring substrate 2 is a transparent substrate such as glass, the back surface of the wiring substrate 2 is irradiated with ultraviolet rays. Further, in the case of an opaque substrate such as ceramics, ultraviolet rays are irradiated from the side surface of the LSI chip 5. Next, as shown in FIG. 1 (c), the pressure tool 6 is released. At this time, the LSI chip 5 is fixed to the wiring board 2 and at the same time, the protruding electrode 4 and the conductor wiring 1
Are electrically connected by contact.

The present invention can be applied not only to LSI chips but also to various other semiconductor elements.

(Effects of the Invention) According to the present invention, the load when the semiconductor element is pressed is the first high load for obtaining a sufficient contact, and the second warp of the LSI chip and the wiring board which does not cause distortion. It is divided into two stages of low load, and in order to cure the insulating resin at the second low load,
The semiconductor element and the wiring board are not warped, the characteristics of the semiconductor element do not change, and the insulating resin does not peel off even in high temperature and high humidity, and a highly reliable connection can be obtained. The practical effect is extremely large.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor element mounting process according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor element mounting process. 1 ... Conductor wiring, 2 ... Wiring board, 3 ... Insulating resin,
4 ... Projection electrode, 5 ... LSI chip, 6 ... Pressurizing tool, 7 ... First load, 8 ... Second load.

Claims (2)

[Claims] 1. A step of applying an insulating resin to the conductor wiring portion of an insulating substrate having conductor wiring, the conductor wiring and the electrode of a semiconductor element are aligned with each other, and the semiconductor element is attached to the insulating substrate. In the step of installing in the region coated with the insulating resin, the semiconductor element is pressurized with a first load by a pressure tool and held for a certain period of time, and then the semiconductor element is applied with a second load lower than the first load. By pressing, the electrode of the semiconductor element and the semiconductor wiring are brought into contact with each other, and the insulating resin is cured while the semiconductor element is pressed, the semiconductor element is fixed to the insulating substrate, and the conductor wiring and the semiconductor A method for mounting a semiconductor device, comprising a step of electrically connecting electrodes of the device. 2. The method of mounting a semiconductor element according to claim 1, wherein an insulating resin is applied to a surface of the semiconductor element having an electrode.