JPH0671551B2 - Quantitative vaporization supply device - Google Patents
Quantitative vaporization supply deviceInfo
- Publication number
- JPH0671551B2 JPH0671551B2 JP13433692A JP13433692A JPH0671551B2 JP H0671551 B2 JPH0671551 B2 JP H0671551B2 JP 13433692 A JP13433692 A JP 13433692A JP 13433692 A JP13433692 A JP 13433692A JP H0671551 B2 JPH0671551 B2 JP H0671551B2
- Authority
- JP
- Japan
- Prior art keywords
- mass flow
- flow rate
- pipe system
- controller
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008016 vaporization Effects 0.000 title claims description 26
- 238000009834 vaporization Methods 0.000 title claims description 24
- 239000007789 gas Substances 0.000 claims description 61
- 239000007788 liquid Substances 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 32
- 239000012159 carrier gas Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009795 derivation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Flow Control (AREA)
- Control Of Non-Electrical Variables (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、混合気体中の気体成分
比を精密に制御し、かつ、必要とする混合気体の総量を
精密に調整することにより、あらかじめ定められた濃度
と量とを備えた混合ガスを供給する装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention precisely controls the gas component ratio in a mixed gas and precisely adjusts the total amount of the required mixed gas to obtain a predetermined concentration and amount. The present invention relates to a device for supplying a mixed gas provided.
【0002】[0002]
【従来の技術】電子工業、特に半導体製造プロセス等の
技術分野においては、気体中に液体成分を気化混合し、
混合気体として利用する必要が、しばしば生じる。従
来、半導体製造のプロセスにおいて、原料液体を気化し
反応室に導き、所定の反応により薄膜、厚膜を形成する
目的で、バブラーが利用されてきた。バブラーは、キャ
リアガスを液体原料中に噴気させて泡状とすることによ
り、液体原料をキャリアガス中に気化混合させる原理を
利用する気化供給装置であるが、バブラー中の液面が液
体原料の消費によって低下すると、キャリアガス流量が
一定であっても前記ガスが液体原料を通過する時間が減
少し、結果的に得られる混合気体成分比が変化した。In the electronic industry, particularly in the technical field of semiconductor manufacturing processes, etc., a liquid component is vaporized and mixed in a gas,
The need for utilization as a mixed gas often arises. Conventionally, in a semiconductor manufacturing process, a bubbler has been used for the purpose of vaporizing a raw material liquid, introducing it into a reaction chamber, and forming a thin film or a thick film by a predetermined reaction. The bubbler is a vaporization supply device that uses the principle of vaporizing and mixing the liquid raw material into the carrier gas by blowing the carrier gas into the liquid raw material to form bubbles, but the liquid level in the bubbler is When the gas flow rate decreases due to consumption, the time during which the gas passes through the liquid raw material decreases even when the carrier gas flow rate is constant, and the resulting mixed gas component ratio changes.
【0003】また、バブラー中の液面でキャリアガスの
気泡が破裂するため、気泡を形成する液膜が飛散、霧化
し、それが混合気体中に液滴として混入して、バブラー
の吐出口の先で凝縮したり気化したりするため、定濃
度、定量の混合気体を制御して得ることが困難であっ
た。ところで、バブラーからの混合気体の吐出口先方を
加温して混合気体中の液体原料を気化させ、ミストによ
る障害の発生を防止することは不可能ではないにして
も、その方法によって混合気体の気体成分の濃度を制御
し、かつ混合気体の総量を規制することは難かしかっ
た。Further, since the bubbles of the carrier gas burst at the liquid surface in the bubbler, the liquid film forming the bubbles scatters and atomizes, which mixes in the mixed gas as liquid droplets, and is discharged from the discharge port of the bubbler. Since it is condensed or vaporized earlier, it is difficult to control and obtain a mixed gas of constant concentration and fixed amount. By the way, it is possible, if not impossible, to prevent the occurrence of trouble due to mist by heating the tip of the outlet of the mixed gas from the bubbler to vaporize the liquid raw material in the mixed gas, and by that method It has been difficult to control the concentration of gas components and regulate the total amount of mixed gas.
【0004】従来、気化した液体原料を減圧された反応
室に導き利用する場合は、液体原料に適度の蒸気圧があ
れば液体原料を収容したシリンダーと減圧された反応室
とを質量流量計を介して連通し、その差圧を利用して気
化した液体原料をシリンダーから反応室に導入し、供給
量を調節しつつ供給する方法が行われていた。Conventionally, when a vaporized liquid raw material is introduced into a depressurized reaction chamber and used, a mass flow meter is used for the cylinder containing the liquid raw material and the depressurized reaction chamber if the liquid raw material has an appropriate vapor pressure. A method has been performed in which the liquid raw material, which is communicated via the liquid, is introduced into the reaction chamber from the cylinder by utilizing the differential pressure and is supplied while adjusting the supply amount.
【0005】この方法によれば液体原料の供給量を制御
することは可能なのであるが、反応室圧力が充分に低圧
でない場合には液体原料の蒸気圧を充分に高めに維持し
ておく必要上、液体原料および質量流量計を高温に保っ
ことを要するので、熱的に不安定な液体原料には適用す
ることができず、また、質量流量計の耐熱性にも限界が
あって、実用化が困難であった。According to this method, it is possible to control the supply amount of the liquid raw material, but when the pressure in the reaction chamber is not sufficiently low, it is necessary to keep the vapor pressure of the liquid raw material sufficiently high. Since it is necessary to keep the liquid raw material and the mass flowmeter at a high temperature, it cannot be applied to a thermally unstable liquid raw material, and the heat resistance of the mass flowmeter is limited, so that it can be put to practical use. Was difficult.
【0006】[0006]
【発明が解決しようとする課題】そこで本発明は、上述
したような公知のバブラーシステムに内在する非制御性
や高蒸気圧の液体原料しか利用することのできない減圧
反応装置への液体原料気化供給系の狭い適用範囲を解消
することができる新規な定量気化供給手段および装置を
開発、提供することを目的とするものである。Therefore, the present invention is to vaporize and supply a liquid raw material to a depressurized reactor which can utilize only the non-controllable or high vapor pressure liquid raw material that is inherent in the known bubbler system as described above. It is an object of the present invention to develop and provide a new quantitative vaporization supply means and device capable of eliminating a narrow application range of a system.
【0007】[0007]
【課題を解決するための手段】本発明は、上述目的を達
成するため、次に述べるとおりの各構成要件を具備す
る。 (1) キャリアガスを液体原料蒸発部に対して流量制
御しつつ送入する第1の質量流量指示調節計を備えた第
1の管系を、前記蒸発部キャリアガス導入端に接続し、
同蒸発部から混合ガスを導出する第2の管系に質量流量
指示計を連結し、さらに、第2の質量流量指示調節計を
備えた第3の管系を、第2の管系に備えた質量流量指示
計の混合ガス導出側に接続すると共に、同管系に定量の
バッフアガスを導入し、質量流量指示計と第1の質量流
量指示調節計との指示値を電子演算制御回路に入力し
て、両指示値の差を算出し液体原料の蒸発物質量流量を
検知すると共に、In order to achieve the above-mentioned object, the present invention has the respective constituent features as described below. (1) A first pipe system equipped with a first mass flow rate indicator controller for feeding carrier gas into the liquid raw material vaporization section while controlling the flow rate is connected to the vaporization section carrier gas introduction end,
A mass flow indicator is connected to a second pipe system that leads out the mixed gas from the evaporation section, and a third pipe system equipped with a second mass flow indicator controller is provided in the second pipe system. In addition to connecting to the mixed gas outlet side of the mass flow indicator, introducing a fixed amount of buffer gas into the same pipe system, and inputting the indicated values of the mass flow indicator and the first mass flow indicator controller to the electronic arithmetic control circuit. Then, the difference between the two indicated values is calculated to detect the flow rate of the evaporated substance of the liquid raw material, and
【0008】蒸発物の質量流量が定められた一定値にな
るよう第1の質量流量指示調節計を前記回路により制御
し、同時に第1の質量流量指示調節計の指示値と第2の
質量流量指示調節計の指示値を、それぞれ前記回路に入
力してその和を演算し、系内における非蒸発ガスの全質
量流量を検出して非蒸発ガスの全質量流量が定められた
一定値になるよう第2の質量流量指示調節計を前記回路
により制御するプロセスを最少限備えることを特徴とす
る定量気化供給装置。The first mass flow rate indicating controller is controlled by the circuit so that the mass flow rate of the vaporized substance becomes a predetermined constant value, and at the same time, the indicated value of the first mass flow rate indicating controller and the second mass flow rate are controlled. The indicated value of the indicating controller is input to each of the circuits, the sum is calculated, the total mass flow rate of the non-evaporated gas in the system is detected, and the total mass flow rate of the non-evaporated gas becomes a predetermined constant value. A quantitative vaporization and supply device characterized in that it comprises at least a process for controlling the second mass flow rate indicating controller by the circuit.
【0009】(2) キャリアガスを液体原料蒸発部に
対して流量制御しつつ送入する第1の質量流量指示調節
計を備えた第1の管系を、前記蒸発部キャリアガス導入
端に接続し、同蒸発部から混合ガスを導出する第2の管
系に質量流量指示計を連結し、さらに、第2の質量流量
指示調節計を備えた第3の管系を、第2の管系に備えた
質量流量指示計の混合ガス導入側に接続すると共に、同
管系に定量のバッフアガスを導入し、第1の質量流量指
示調節計と第2の質量流量指示調節計の指示値ならびに
質量流量計の指示値を、それぞれ電子演算制御回路に入
力して、質量流量計の指示値から第1および第2質量流
量指示調節計の指示値の和を差引き演算して、液体原料
の蒸発物質量流量を検知すると共に、(2) A first pipe system provided with a first mass flow rate indicator controller for feeding carrier gas into the liquid raw material vaporization section while controlling the flow rate is connected to the vaporization section carrier gas introduction end. Then, the mass flow indicator is connected to the second pipe system that leads out the mixed gas from the evaporation section, and the third pipe system equipped with the second mass flow indicator controller is connected to the second pipe system. In addition to being connected to the mixed gas introduction side of the mass flow rate indicator provided in the above, a fixed amount of buffer gas is introduced into the same pipe system, and the indicated values and masses of the first mass flow rate indicator controller and the second mass flow rate indicator controller The indicated value of the flowmeter is input to each electronic arithmetic control circuit, and the sum of the indicated values of the first and second mass flow rate indicating controllers is subtracted from the indicated value of the mass flowmeter to evaporate the liquid raw material. While detecting the mass flow rate,
【0010】蒸発物の質量流量が定められた一定値にな
るよう第1の質量流量指示調節計を前記回路により制御
し、同時に第1の質量流量指示調節計の指示値と第2の
質量流量指示調節計の指示値を、それぞれ前記回路に入
力して、その和を演算し、系内における非蒸発ガスの全
質量流量を検出して、非蒸発ガスの全質量流量が定めら
れた一定値になるよう第2の質量流量指示調節計を前記
回路により制御するプロセスを最少限備えることを特徴
とする定量気化供給装置。The first mass flow rate indicating controller is controlled by the circuit so that the mass flow rate of the vaporized substance becomes a predetermined constant value, and at the same time, the indicated value of the first mass flow rate indicating controller and the second mass flow rate are controlled. The indicated value of the indicating controller is input to each of the circuits, the sum is calculated, the total mass flow rate of the non-evaporated gas in the system is detected, and the total mass flow rate of the non-evaporated gas is set to a fixed value. The quantitative vaporization supply device is characterized by at least including a process of controlling the second mass flow rate indicating controller by the circuit so that
【0011】[0011]
【作用】本発明にかかる供給装置の系統図を示す、図1
および図2に基づいて本発明装置の原理的作用を説明す
ると、次のとおりである。図中、6は、キャリアガスが
導入される第一の管系で、前記管系にはキャリアガスの
質量流量を計測し、かつ、その流量調整ができる第1の
質量流量調節計1が連結されており、その導出側は原料
液体10を収めた蒸発部4に連通している。FIG. 1 is a system diagram of a supply device according to the present invention.
The principle operation of the device of the present invention will be described with reference to FIG. 2 as follows. In the figure, 6 is a first tube system into which a carrier gas is introduced, and the tube system is connected with a first mass flow controller 1 capable of measuring the mass flow rate of the carrier gas and adjusting the flow rate. The outlet side communicates with the evaporation unit 4 containing the raw material liquid 10.
【0012】そこで原料液体10中にキャリアガスを噴気
させることにより、前記液体の一部がキャリアガス中に
蒸発し、混合気体となって管系7を通過し質量流量計2
に導入される。この際、第1の管系に導入されたキャリ
アガスの質量流量調節計1で測定した質量流量が、m1g
/sec 質量流量計2で計測した混合気体の質量流量が、m2g/
sec であるとき、原料液体の気化によって新たに増加し
た質量流量、m4g/sec は、図1図示の方式によれば m4g/sec =m2g/sec −m1g/sec …(1)
である。Then, by injecting a carrier gas into the raw material liquid 10, a part of the liquid is evaporated into the carrier gas to form a mixed gas, which passes through the pipe system 7 and the mass flowmeter 2
Will be introduced to. At this time, the mass flow rate measured by the mass flow controller 1 of the carrier gas introduced into the first pipe system is m 1 g
/ Sec The mass flow rate of the mixed gas measured by the mass flowmeter 2 is m 2 g /
When sec, the mass flow rate newly increased by vaporization of the raw material liquid, m 4 g / sec, is m 4 g / sec = m 2 g / sec −m 1 g / sec according to the method shown in FIG. (1)
Is.
【0013】さらに、8は、バッフアガス(キャリアガ
スと同一成分)が導入される第2の管系で、同管系8に
はバッフアガスの質量流量を計測し、かつ、その流量を
調整することができる第2の質量流量指示調節計3が挿
入されていて、その導出側は、図1図示の方式では、質
量流量計2の導出側端末管系9に連通しており、図2図
示の方式の場合は管系7に連通する。バッフアガスの質
量流量を調整して、これを m3g/sec としたとき、Further, 8 is a second pipe system into which the buffer gas (the same component as the carrier gas) is introduced, and the mass flow rate of the buffer gas can be measured in the pipe system 8 and the flow rate can be adjusted. A possible second mass flow rate indicator controller 3 is inserted, and its outlet side communicates with the outlet side terminal pipe system 9 of the mass flowmeter 2 in the system shown in FIG. 1, and the system shown in FIG. In the case of, it communicates with the pipe system 7. When adjusting the mass flow rate of the buffer gas to m 3 g / sec,
【0014】 図2図示の方式によれば、m4g/sec =m2g/sec −m1
g/sec −m3g/sec …(2) で表わされる。本装置
の端末管系9における混合気体の質量流量は、図1の方
式では m3g/sec +m2g/sec ……… (3) 図2の方式では m2g/sec …………… (4) である。According to the method shown in FIG. 2, m 4 g / sec = m 2 g / sec −m 1
g / sec-m 3 g / sec (2) The mass flow rate of the mixed gas in the terminal pipe system 9 of this device is m 3 g / sec + m 2 g / sec in the system of Fig. 1 (3) m 2 g / sec in the system of Fig. 2 … (4).
【0015】また、本装置の端末管系9におけるキャリ
アガスとバッフアガスとの質量流量の合計は、両方式と
もm1g/sec +m3g/secである。これらの質量流量値
の演算は、電子演算制御部5により行われ、質量流量制
御信号もまた、前記制御部5から第1および第2の質量
流量調節計1,3に加えられる。電子演算制御部5には
必要に応じ、計測値、演算値等を表示するディスプレイ
を設けてもよい。The total mass flow rate of the carrier gas and the buffer gas in the terminal pipe system 9 of the present apparatus is m 1 g / sec + m 3 g / sec in both formulas. The calculation of these mass flow rate values is performed by the electronic calculation control unit 5, and the mass flow rate control signal is also added from the control unit 5 to the first and second mass flow rate controllers 1 and 3. The electronic calculation control unit 5 may be provided with a display for displaying measured values, calculated values, etc., if necessary.
【0016】(a) 本装置によって端末管系9におけ
る混合気体の質量流量を所定値として変化させず、気体
成分比のみを所定の値に変化させる手段は、次のとおり
である。すなわち、原料液体10の気化によって発生する
ガス成分の端末管系9を通る混合気体に対する割合:C
は、次の式によって表わされる。図1図示の方式では C=(m2g/sec −m1g/sec )/(m3g/sec +m2g/sec ) ……(5) 図2図示の方式では C=(m2g/sec −m1g/sec −m3g/sec )/(m2g/sec ) ……(6)(A) Means for changing only the gas component ratio to a predetermined value without changing the mass flow rate of the mixed gas in the terminal pipe system 9 as a predetermined value by this apparatus is as follows. That is, the ratio of the gas component generated by the vaporization of the raw material liquid 10 to the mixed gas passing through the terminal pipe system 9 is C.
Is represented by the following equation. In the method shown in FIG. 1, C = (m 2 g / sec −m 1 g / sec) / (m 3 g / sec + m 2 g / sec) (5) In the method shown in FIG. 2, C = (m 2 g / sec −m 1 g / sec −m 3 g / sec) / (m 2 g / sec) …… (6)
【0017】また、Cは、キャリアガス流量m1g/sec
に比例するから、式(3)または(4)の値を一定に保
ちつつm1g/sec を増加させ、m3g/sec を減少させれ
ば、混合気体の質量流量を変化させることなく、気化成
分比を増加させることでき、m1g/sec を減少させ、m3
g/sec を増加させれば、混合気体の質量流量を変化さ
せずに気化成分比を減少させることができる。C is the carrier gas flow rate m 1 g / sec.
Therefore, if m 1 g / sec is increased and m 3 g / sec is decreased while keeping the value of equation (3) or (4) constant, the mass flow rate of the mixed gas is not changed. , The vaporization component ratio can be increased, m 1 g / sec can be decreased, and m 3
If g / sec is increased, the vaporized component ratio can be decreased without changing the mass flow rate of the mixed gas.
【0018】(b) 本装置は、端末管系9における混
合気体の質量流量を所定量に変化させつつ気化成分比を
所定の値に維持することができる。すなわち、m1g/se
c とm3g/sec を、式(5),(6)で表わした、Cの
値を一定値に保ちつつバランスして低減させることによ
り、一定の気化成分比を有する混合気体の質量流量を制
御することができる。 (c) さらに気化面積が変化し易く、結果的に時間当
りの気化量が経時的に変化し易い昇華性固体を気化し、
所定の気化成分比の所定量の混合気体を安定して得よう
とする場合にも利用することができる。 (d) また、蒸発部がバブラーのような液体気化装置
で、液面の変動によりキャリアガス対気化成分比が著し
く変化するような場合にも、自動的に所定の気化成分
比;所定量の混合気体を発生することができる。(B) This device can maintain the vaporized component ratio at a predetermined value while changing the mass flow rate of the mixed gas in the terminal pipe system 9 to a predetermined amount. That is, m 1 g / se
The mass flow rate of a mixed gas having a constant vaporization component ratio is obtained by reducing c and m 3 g / sec in a balanced manner while keeping the value of C expressed by the equations (5) and (6) constant. Can be controlled. (C) Further, the sublimable solid whose vaporization area is likely to change and consequently the vaporization amount per hour is likely to change over time is vaporized,
It can also be used when stably obtaining a predetermined amount of a mixed gas having a predetermined vaporization component ratio. (D) Further, even when the vaporizer is a liquid vaporizer such as a bubbler and the ratio of the carrier gas to the vaporized component remarkably changes due to the fluctuation of the liquid surface, the predetermined vaporized component ratio; A mixed gas can be generated.
【0019】[0019]
【実施例】本発明定量気化供給装置の実施例を図面に沿
って説明するが、以下に記載の装置は、単に本発明の好
ましい実施例の一、二について述べたに過ぎないのであ
って、前記実施例を構成する部材は本出願当時の当該技
術分野における技術レベルの範囲内で各種の変形例があ
り得るから、格別の理由を示すことなしに、以下に説明
の実施例の構成のみに基づいて本発明の要旨を限定的に
解釈することは許さるべきでない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the quantitative vaporization supply device of the present invention will be described with reference to the drawings. However, the device described below merely describes one or two of the preferred embodiments of the present invention. Since the members constituting the embodiment may have various modifications within the technical level in the technical field at the time of the present application, only the constitution of the embodiment described below will be shown without any particular reason. A limited interpretation of the gist of the present invention should not be allowed on the basis of this.
【0020】(その1)図1は、本発明装置の一実施例
を示す系統図で、その詳細構造は前述〔作用〕の項で詳
細に説明したとおりであるから、ここでは省略する。図
中、蒸発器4をバブラーとし、バブラー周囲を加温して
バブラーおよび、その内容物を80℃に温めた。バブラー
内の原料液体10をテトラエトキシシランとした。第1の
マスフローコントローラ(質量流量調節計)1の測定し
た質量流量をm1g/sec 、第2のマスフローコントロー
ラ3が計測した質量流量を、m3g/sec 質量流量計2が測定した質量流量を、m2g/sec とした
とき、(No. 1) FIG. 1 is a system diagram showing an embodiment of the device of the present invention, and its detailed structure is as described in detail in the above-mentioned [Operation], so it is omitted here. In the figure, the evaporator 4 was used as a bubbler, and the bubbler periphery was heated to warm the bubbler and its contents to 80 ° C. The raw material liquid 10 in the bubbler was tetraethoxysilane. The mass flow rate measured by the first mass flow controller (mass flow rate controller) 1 is m 1 g / sec, and the mass flow rate measured by the second mass flow controller 3 is m 3 g / sec. The mass flow rate measured by the mass flow meter 2. When the flow rate is m 2 g / sec,
【0021】電子演算制御部5内では、それぞれ(m2g
/sec −m1g/sec )/(m3g/sec +m2g/sec )を
演算してCとし、m1g/sec +m3g/sec を演算してM
として、 Cの値が低下しようとすると、第1のマスフローコ
ントローラ1のコントロールバルブを開いてm1g/sec
をΔmg/sec だけ増加させ、同時に第2のマスフローコ
ントローラ3のコントロールバルブを閉込み、m3g/se
c をΔmg/sec少させるよう指令して、Cの値を一定値
に保つと共に、Mの値を一定値に維持することができる
ように回路設計した。In the electronic operation control unit 5, each (m 2 g
/ Sec −m 1 g / sec) / (m 3 g / sec + m 2 g / sec) is calculated as C, and m 1 g / sec + m 3 g / sec is calculated and M is calculated.
When the value of C is about to decrease, the control valve of the first mass flow controller 1 is opened and m 1 g / sec
Is increased by Δmg / sec, and at the same time, the control valve of the second mass flow controller 3 is closed, and m 3 g / se
The circuit was designed so that the value of C can be maintained at a constant value and the value of M can be maintained at a constant value by instructing to decrease c by Δmg / sec.
【0022】 Cの値が増加しようとするときは、第
1のマスフローコントローラ1のコントロールバルブを
閉込みm1g/sec をΔmg/sec だけ減少させ、同時に第
2のマスフローコントローラ3のコントロールバルブを
開き、m3g/sec をΔmg/sec 増加させて、Cの値を一
定に保つと共に、Mの値を一定値に維持できるようにし
た。テトラエトキシシラン気体の流量は、ヘリウム換算
流量でm2g/sec −m1g/sec として測定値を得た。電
子演算制御部5において、Mの値を3mg/sec 、Cの値
を 0.0196に設定した。When the value of C is about to increase, the control valve of the first mass flow controller 1 is closed and m 1 g / sec is decreased by Δmg / sec, and at the same time, the control valve of the second mass flow controller 3 is turned on. When opened, m 3 g / sec was increased by Δmg / sec so that the value of C could be kept constant and the value of M could be kept constant. The flow rate of the tetraethoxysilane gas was m 2 g / sec −m 1 g / sec in terms of helium conversion, and the measured value was obtained. In the electronic operation control unit 5, the value of M was set to 3 mg / sec and the value of C was set to 0.0196.
【0023】ついで、バッフアガス導入管系8から、ヘ
リウムを導入し、約2秒後に第2のマスフローコントロ
ーラ3の指示値が3mg/sec になった後、キャリアガス
導入管系6より、ヘリウムを導入した。約2秒後に、C
の値は 0.0196に到達して安定し、Mの値は3mg/sec
で安定した。バブラー周囲温度を60℃から 100℃迄、変
動させても、MとCの値は実用上安定し、変動しなかっ
た。Then, helium was introduced from the buffer gas introduction pipe system 8, and after about 2 seconds, the indication value of the second mass flow controller 3 became 3 mg / sec, and then helium was introduced from the carrier gas introduction pipe system 6. did. After about 2 seconds, C
Value reaches 0.0196 and stabilizes, and M value is 3 mg / sec.
Stable in. Even when the bubbler ambient temperature was changed from 60 ° C to 100 ° C, the values of M and C were practically stable and did not change.
【0024】(その2)図2の系統図は、本発明装置の
別の実施例であって、その詳細構造は、実施例(その
1)と同様に〔作用〕の項に述べてあるので再説はしな
い。図中、蒸発器4をバブラーとし、その周囲を加温し
てバブラーおよびその内容物を80℃に温めること、並び
にバブラー内容をテトラエトキシシランとした事は、実
施例(その1)と同様である。電子演算制御部5内で
は、(m2g/sec −m3g/sec −m1g/sec )/(m2g
/sec )を演算してCとし、m2g/sec をMとし、(Part 2) The system diagram of FIG. 2 shows another embodiment of the device of the present invention, and its detailed structure is described in the section of [Operation] as in the embodiment (Part 1). I will not repeat it. In the figure, the evaporator 4 was used as a bubbler, the surrounding was heated to heat the bubbler and its contents to 80 ° C., and the content of the bubbler was tetraethoxysilane, as in Example (No. 1). is there. In the electronic operation control unit 5, (m 2 g / sec −m 3 g / sec −m 1 g / sec) / (m 2 g
/ Sec) to C and m 2 g / sec to M,
【0025】 Cの値が低下しようとすると、第1の
マスフローコントローラ1のコントロールバルブを開い
てm1g/sec をΔmg/sec だけ増加させ、同時に、第2
のマスフローコントローラ3のコントロールバルブを閉
込み、m3g/sec をΔmg/sec 減少させて、Cの値を一
定値に保つと共に、Mの値を一定値に維持することがで
きるようにした。When the value of C is about to decrease, the control valve of the first mass flow controller 1 is opened to increase m 1 g / sec by Δmg / sec, and at the same time, the second
The control valve of the mass flow controller 3 was closed and m 3 g / sec was decreased by Δmg / sec so that the value of C could be kept constant and the value of M could be kept constant.
【0026】 Cの値が増加しようとするとき、第1
のマスフローコントローラ1のコントロールバルブを閉
込み、m1g/sec をΔmg/sec 減少させ、同時に第2の
マスフローコントローラ3のコントロールバルブを開い
てm3g/sec をΔmg/sec を増加させて、Cの値を一定
値に保つと共に、Mの値を一定に維持できるようにし
た。テトラエトキシシラン気体の流量は、ヘリウム換算
流量で、m2g/sec −m1g/sec として測定値を得た。When the value of C is about to increase, the first
Close the control valve of the mass flow controller 1 to reduce m 1 g / sec by Δmg / sec, and at the same time open the control valve of the second mass flow controller 3 to increase m 3 g / sec by Δmg / sec, The value of C was kept constant and the value of M was kept constant. The flow rate of the tetraethoxysilane gas was a helium conversion flow rate, and the measured value was obtained as m 2 g / sec −m 1 g / sec.
【0027】電子演算制御部5において、Mの値を3mg
/sec 、Cの値を 0.0196に設定した。次いで、バッフ
アガス導入管系8より、ヘリウムを導入し、約2秒後
に、第2のマスフローコントローラ3の指示値が3mg/
sec を示した後、キャリアガス導入管系6から、ヘリウ
ムを導入した。約2秒後に、Cの値は 0.0196に到達し
て安定し、Mの値は3mg/sec で安定した。バブラー周
囲温度を60℃から 100℃迄、変動させても、MとCの値
は実用上安定し、変動しなかった。また、バブラー内容
物の減少によっても、MとCの値は実用上安定し、変動
はなかった。さらに、同一の実施例で、Mの設定値を
0.5mg/sec から15mg/sec の間に採り、Cの設定値を
0.002から 0.09迄の間に採り、それぞれのMとCの
安定性を確かめたところ、実用上変動はなかった。In the electronic operation control unit 5, the value of M is set to 3 mg.
/ Sec and the value of C were set to 0.0196. Next, helium was introduced from the buffer gas introduction pipe system 8, and after about 2 seconds, the indication value of the second mass flow controller 3 was 3 mg /
After indicating sec, helium was introduced from the carrier gas introducing pipe system 6. After about 2 seconds, the value of C reached to 0.0196 and became stable, and the value of M became stable at 3 mg / sec. Even when the bubbler ambient temperature was changed from 60 ° C to 100 ° C, the values of M and C were practically stable and did not change. Further, the values of M and C were practically stable and did not change even when the content of the bubbler was reduced. Furthermore, in the same embodiment, the set value of M
Select between 0.5mg / sec and 15mg / sec, and set the value of C.
When it was taken from 0.002 to 0.09 and the stability of each M and C was confirmed, there was practically no change.
【0028】[0028]
【発明の効果】本件発明は、以上のとおりであって半導
体製造プロセスなどにおいて、必要とする液体原料をキ
ャリアガス中に気化混合させるようにした気化供給装置
において、液体原料のレベルにある程度の変動が生じて
も、また、蒸発器中で液膜が霧化する現象が生じること
があっても、供給する前記混合気体の気体成分濃度を常
に確実に所望比率にするよう制御可能であり、それは、
また混合気体の供給量に無関係に所望比率の維持を可能
にする装置を提供する。As described above, according to the present invention, the level of the liquid raw material is changed to some extent in the vaporization supply device in which the liquid raw material required in the semiconductor manufacturing process is vaporized and mixed into the carrier gas. Even if the phenomenon occurs, or the phenomenon that the liquid film is atomized in the evaporator may occur, it is possible to control so that the gas component concentration of the supplied mixed gas is always at a desired ratio. ,
Further, it is possible to provide a device capable of maintaining a desired ratio regardless of the supply amount of the mixed gas.
【0029】さらに、本発明装置は、液体原料、流量計
などを、さほど高温に加熱することなしに、上述した供
給制御を可能とする等々、従来公知のバブラーには期待
することができない、格別の作用および効果を奏するこ
とができる。Further, the apparatus of the present invention enables the above-mentioned supply control without heating the liquid raw material, the flowmeter, etc. to a very high temperature, and so on, which cannot be expected from a conventionally known bubbler. The action and effect of can be exhibited.
【図1】本発明供給装置の一実施例の系統図を示すもの
である。FIG. 1 is a system diagram of an embodiment of a supply device of the present invention.
【図2】本発明供給装置の別の実施例の系統図を示すも
のである。FIG. 2 shows a system diagram of another embodiment of the supply device of the present invention.
1 第1マスフローコントローラ 2 質量流量計 3 第2マスフローコントローラ 4 蒸発部 5 電子演算制御装置 6 キャリアガス導入管系 7 混合気体導出管系 8 バッフアガス導出管系 9 端末管系 10 原料液体。 1 1st mass flow controller 2 Mass flow meter 3 2nd mass flow controller 4 Evaporation part 5 Electronic operation control device 6 Carrier gas introduction pipe system 7 Mixed gas derivation pipe system 8 Buffer gas derivation pipe system 9 Terminal pipe system 10 Raw material liquid.
Claims (2)
流量制御しつつ送入する第1の質量流量指示調節計を備
えた第1の管系を、前記蒸発部キャリアガス導入端に接
続し、同蒸発部から混合ガスを導出する第2の管系に質
量流量指示計を連結し、さらに、第2の質量流量指示調
節計を備えた第3の管系を、第2の管系に備えた質量流
量指示計の混合ガス導出側に接続すると共に、同管系に
定量のバッフアガスを導入し、質量流量指示計と第1の
質量流量指示調節計との指示値を電子演算制御回路に入
力して、両指示値の差を算出し液体原料の蒸発物質量流
量を検知すると共に、蒸発物の質量流量が定められた一
定値になるよう第1の質量流量指示調節計を前記回路に
より制御し、同時に第1の質量流量指示調節計の指示値
と第2の質量流量指示調節計の指示値を、それぞれ前記
回路に入力してその和を演算し、系内における非蒸発ガ
スの全質量流量を検出して非蒸発ガスの全質量流量が定
められた一定値になるよう第2の質量流量指示調節計を
前記回路により制御するプロセスを最少限備えることを
特徴とする定量気化供給装置。1. A first pipe system equipped with a first mass flow rate indicating controller for feeding a carrier gas into a liquid raw material vaporization section while controlling the flow rate thereof is connected to the vaporization section carrier gas introduction end. , A mass flow indicator is connected to a second pipe system for leading out the mixed gas from the evaporation section, and a third pipe system equipped with a second mass flow indicator controller is connected to the second pipe system. It is connected to the mixed gas outlet side of the provided mass flow rate indicator, and a fixed amount of buffer gas is introduced into the same pipe system, and the indicated values of the mass flow rate indicator and the first mass flow rate indicator controller are stored in the electronic calculation control circuit. By inputting and calculating the difference between the two indicated values to detect the flow rate of the vaporized substance of the liquid raw material, the first mass flow rate indicating controller is controlled by the circuit so that the mass flow rate of the vaporized substance becomes a predetermined constant value. The first mass flow rate indicating controller and the second mass flow rate finger are controlled at the same time. The indicated value of the indicating controller is input to each of the circuits and the sum is calculated, and the total mass flow rate of the non-evaporated gas in the system is detected to make the total mass flow rate of the non-evaporated gas a fixed value. A quantitative vaporization and supply device characterized in that it comprises at least a process for controlling the second mass flow rate indicating controller by the circuit.
流量制御しつつ送入する第1の質量流量指示調節計を備
えた第1の管系を、前記蒸発部キャリアガス導入端に接
続し、同蒸発部から混合ガスを導出する第2の管系に質
量流量指示計を連結し、さらに、第2の質量流量指示調
節計を備えた第3の管系を、第2の管系に備えた質量流
量指示計の混合ガス導入側に接続すると共に、同管系に
定量のバッフアガスを導入し、第1の質量流量指示調節
計と第2の質量流量指示調節計の指示値ならびに質量流
量計の指示値を、それぞれ電子演算制御回路に入力し
て、質量流量計の指示値から第1および第2質量流量指
示調節計の指示値の和を差引き演算して、液体原料の蒸
発物質量流量を検知すると共に、蒸発物の質量流量が定
められた一定値になるよう第1の質量流量指示調節計を
前記回路により制御し、同時に第1の質量流量指示調節
計の指示値と第2の質量流量指示調節計の指示値を、そ
れぞれ前記回路に入力して、その和を演算し、系内にお
ける非蒸発ガスの全質量流量を検出して、非蒸発ガスの
全質量流量が定められた一定値になるよう第2の質量流
量指示調節計を前記回路により制御するプロセスを最少
限備えることを特徴とする定量気化供給装置。2. A first pipe system equipped with a first mass flow rate indicating controller for feeding carrier gas into the liquid raw material vaporization section while controlling the flow rate thereof is connected to the vaporization section carrier gas introduction end. , A mass flow indicator is connected to a second pipe system for leading out the mixed gas from the evaporation section, and a third pipe system equipped with a second mass flow indicator controller is connected to the second pipe system. In addition to being connected to the mixed gas introduction side of the provided mass flow rate indicator, a fixed amount of buffer gas was introduced into the same pipe system, and the indicated value and mass flow rate of the first mass flow rate indicator controller and the second mass flow rate indicator controller Each of the indicated values of the meter is input to the electronic arithmetic control circuit, and the sum of the indicated values of the first and second mass flow rate indicating controllers is subtracted from the indicated value of the mass flow meter to calculate the evaporation material of the liquid raw material. The mass flow rate is detected and the mass flow rate of the evaporant becomes a fixed value. As described above, the first mass flow rate indicating controller is controlled by the circuit, and at the same time, the indication value of the first mass flow rate indicating controller and the indication value of the second mass flow rate indicating controller are respectively input to the circuit, The sum is calculated, the total mass flow rate of the non-evaporated gas in the system is detected, and the second mass flow rate indicator controller is controlled by the circuit so that the total mass flow rate of the non-evaporated gas becomes a predetermined constant value. Quantitative vaporization and supply device characterized by comprising a minimum number of processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13433692A JPH0671551B2 (en) | 1992-04-28 | 1992-04-28 | Quantitative vaporization supply device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13433692A JPH0671551B2 (en) | 1992-04-28 | 1992-04-28 | Quantitative vaporization supply device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05305228A JPH05305228A (en) | 1993-11-19 |
| JPH0671551B2 true JPH0671551B2 (en) | 1994-09-14 |
Family
ID=15125967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13433692A Expired - Lifetime JPH0671551B2 (en) | 1992-04-28 | 1992-04-28 | Quantitative vaporization supply device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0671551B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006272100A (en) * | 2005-03-28 | 2006-10-12 | Ishikawajima Harima Heavy Ind Co Ltd | Volatile material volatilization supply system |
| JP2014145115A (en) * | 2013-01-29 | 2014-08-14 | Tokyo Electron Ltd | Raw gas supply apparatus, film deposition apparatus, flow rate measuring method, and memory medium |
| JP5949586B2 (en) * | 2013-01-31 | 2016-07-06 | 東京エレクトロン株式会社 | Raw material gas supply apparatus, film forming apparatus, raw material supply method, and storage medium |
| JP6135475B2 (en) | 2013-11-20 | 2017-05-31 | 東京エレクトロン株式会社 | Gas supply apparatus, film forming apparatus, gas supply method, and storage medium |
| JP2016040402A (en) * | 2014-08-12 | 2016-03-24 | 東京エレクトロン株式会社 | Raw material gas supply device |
| US10256101B2 (en) | 2015-09-30 | 2019-04-09 | Tokyo Electron Limited | Raw material gas supply apparatus, raw material gas supply method and storage medium |
| JP6627474B2 (en) | 2015-09-30 | 2020-01-08 | 東京エレクトロン株式会社 | Source gas supply device, source gas supply method, and storage medium |
| JP2017053039A (en) * | 2016-11-24 | 2017-03-16 | 東京エレクトロン株式会社 | Raw material gas supply apparatus, film deposition apparatus, method for measuring flow rate, and storage medium |
-
1992
- 1992-04-28 JP JP13433692A patent/JPH0671551B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05305228A (en) | 1993-11-19 |
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