JPH0672069B2 - Superconductor manufacturing method - Google Patents
Superconductor manufacturing methodInfo
- Publication number
- JPH0672069B2 JPH0672069B2 JP63113947A JP11394788A JPH0672069B2 JP H0672069 B2 JPH0672069 B2 JP H0672069B2 JP 63113947 A JP63113947 A JP 63113947A JP 11394788 A JP11394788 A JP 11394788A JP H0672069 B2 JPH0672069 B2 JP H0672069B2
- Authority
- JP
- Japan
- Prior art keywords
- superconductor
- powder
- main component
- iia group
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000002887 superconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 18
- 229910052716 thallium Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910002480 Cu-O Inorganic materials 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000008188 pellet Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910014454 Ca-Cu Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- RTRWPDUMRZBWHZ-UHFFFAOYSA-N germanium niobium Chemical compound [Ge].[Nb] RTRWPDUMRZBWHZ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、高臨界温度が期待されるTlを含む酸化物超電
導体の製造方法に関するものである。特に作製が難しい
薄膜超電導体の製造に関するものである。TECHNICAL FIELD The present invention relates to a method for producing an oxide superconductor containing Tl, which is expected to have a high critical temperature. Particularly, it relates to the production of a thin film superconductor which is difficult to produce.
従来の技術 高温超電導体として、A15型２元系化合物として窒化ニ
オブ(NbN)やゲルマニウムニオブ(Nb3Ge)などが知られて
いたが、これらの材料の超電導転移温度はたかだか24°
Ｋであった。一方、ペロブスカイト系３元化合物は、さ
らに高い転移温度が期待され、Ba-La-Cu-O系の高温超電
導体が提案された〔J.G.Bendorz and K.A.Muller,ツァ
イト シュリフト ファアフィジーク(Zetshrift Furph
ysik B)‐Condensed Matter 64,189-193（1986）〕。Conventional technology As high-temperature superconductors, niobium nitride (NbN) and germanium niobium (Nb 3 Ge) have been known as A15 type binary compounds, but the superconducting transition temperature of these materials is at most 24 °.
It was K. On the other hand, perovskite-based ternary compounds are expected to have higher transition temperatures, and Ba-La-Cu-O-based high-temperature superconductors have been proposed [JGBendorz and KAMuller, Zetshrift Furafijsik
ysik B) -Condensed Matter 64,189-193 (1986)].
さらに、Tl-Ba-Ca-Cu-O系の材料が100K以上の転移温度
を示すことも発見された。〔Z.Z.Sheng and A.M.Herman
n ネイチャー(Nature)Vol.332,138-139（1988）〕 この種の材料の超電導機構の詳細は明らかではないが、
転移温度が室温以上に高くなる可能性があり、高温超電
導体として従来の２元系化合物より、より有望な特性が
期待される。Furthermore, it was discovered that the Tl-Ba-Ca-Cu-O-based material exhibits a transition temperature of 100K or higher. 〔ZZ Sheng and AM Herman
n Nature Vol.332, 138-139 (1988)] Although the details of the superconducting mechanism of this kind of material are not clear,
Since the transition temperature may be higher than room temperature, more promising properties are expected as a high temperature superconductor than conventional binary compounds.
発明が解決しようとする課題 しかしながらTl-Ba-Ca-Cu-O系の材料は、Tlの蒸気圧が
異常に高いため熱処理工程が非常に難しいものであっ
た。従ってこの種の材料で再現性良く超電導特性を出す
のが課題となっていた。Problems to be Solved by the Invention However, the Tl-Ba-Ca-Cu-O-based material was extremely difficult in the heat treatment step because the vapor pressure of Tl was abnormally high. Therefore, it has been a problem to obtain superconducting characteristics with good reproducibility using this kind of material.
また、Tl-Ba-Ca-Cu-O系の材料は、現在の技術では焼結
という過程でしか形成できないため、セラミックの粉末
あるいはブロックの形状でしか得られない。一方、この
種の材料を実用化する場合、薄膜状に加工することが強
く要望されているが、従来の技術では、薄膜化は非常に
困難とされている。Moreover, since the Tl-Ba-Ca-Cu-O-based material can be formed only in the process of sintering by the current technology, it can be obtained only in the form of ceramic powder or block. On the other hand, when putting this kind of material into practical use, it is strongly demanded to process it into a thin film, but it is very difficult to form a thin film by the conventional technology.
課題を解決するための手段 本発明の超電導体の製造方法は、主成分がすくなくとも
Tl,Cu,IIa族元素を含む物質に対し、前・後・上・下・
左・右の周辺一面以上をタリウムを含む酸化物材料で配
置して熱処理を行ない、作製するというものである。Means for Solving the Problems The method for producing a superconductor according to the present invention has at least a main component.
For substances containing Tl, Cu, IIa group elements, front, rear, upper, lower,
One or more surfaces on the left and right sides are arranged with an oxide material containing thallium, and heat treatment is performed to manufacture.
作用 本発明者等は、上記方法で熱処理工程を行なうことによ
り、再現性良く簡単にTlを含む超電導体を作製できると
いう発見に基づいて本発明を行なった。特に超電導特性
を出すのは非常に難しいとされていたこの種の薄膜材料
に対しても、この方法は有効であることを合わせて確認
した。これは熱処理過程において、少くともTl,Cu,IIa
族元素を含む超電導体と、周りのTlを含む酸化物材料母
体とにおいてTl蒸気が平衡に達し、超電導体からTlが抜
けるのを防ぐためと思われる。この方法は周りのTlを含
む酸化物材料母体の容積が大きいので種々の熱処理条件
に対してもTlが超電導体から抜けにくく、また非常に簡
便に行なえるという特徴を持つ。Action The present inventors have carried out the present invention based on the discovery that a Tl-containing superconductor can be easily produced with good reproducibility by performing the heat treatment step by the above method. In particular, it was confirmed that this method is also effective for this kind of thin film material, which was said to be extremely difficult to obtain superconducting properties. This is at least Tl, Cu, IIa during the heat treatment process.
This seems to prevent Tl vapor from reaching the equilibrium between the superconductor containing the group element and the surrounding oxide material matrix containing Tl and causing Tl to escape from the superconductor. Since this method has a large volume of the surrounding oxide material matrix containing Tl, Tl is difficult to escape from the superconductor even under various heat treatment conditions, and is very easy to perform.
この場合、周りのTlを含む酸化物材料が粉体であれば、
超電導体あるいはこの一部を封入した物体を粉の中に埋
没させればいいので非常に簡単である。粉の組成とし
て、酸化タリウムを用いた場合には融点があまり高くな
いので高温の熱処理に難があるが、Tl,Cu,IIa族元素の
複合酸化物の粉であれば900℃程度の高温にしても融け
ることはなく、熱処理条件を任意に設定できる。また周
りのTlを含む酸化物材料として、Tl,Cu,IIa族元素を含
む酸化物焼結体からなる容器を用いた場合にも、前記容
器の中に超電導体を入れて熱処理を行なえば良いので簡
便である。In this case, if the surrounding oxide material containing Tl is powder,
It is very easy because the superconductor or an object encapsulating a part of it can be buried in the powder. As for the composition of the powder, when thallium oxide is used, its melting point is not so high that it is difficult to perform high-temperature heat treatment, but if it is a powder of Tl, Cu, or a complex oxide of IIa group element, the temperature should be about 900 ° C. However, it does not melt, and the heat treatment conditions can be set arbitrarily. Also, as a surrounding oxide material containing Tl, Tl, Cu, even when using a container made of an oxide sintered body containing a IIa group element, it is sufficient to put a superconductor in the container and perform heat treatment. Because it is simple.
実施例 以下本発明の内容をさらに深く理解されるために、具体
的な実施例をいくつか示す。Examples Hereinafter, some specific examples will be shown in order to further understand the content of the present invention.
（実施例１） Tl2O3,BaO,CaO,CuOを組成がTl-Ba-Ca-Cu＝2-2-2-3にな
るように秤量・混合し、プレスして2mm×2mm×10mmのペ
レット状にした。熱処理の工程を第１図のようにして行
う。すなわちあらかじめTl2O3,BaO,CaO,CuOをTl-Ba-Ca-
Cu＝2-1-2-3の組成で混合し、酸素中900℃,5時間焼成し
た粉体11を作製しておき、その中に前述のペレット12を
埋めてアルミナるつぼ13に入れ、アルミナふた14をして
酸素中900℃,1時間加熱する。このようにして作製した
ペレットはTl抜けがなくよく焼結しており、まわりの粉
体がある程度くっついているが簡単にふき取ることがで
きた。このペレットは絶対温度を115Kで零抵抗となる良
好な超電導特性を示した。(Example 1) Tl 2 O 3 , BaO, CaO, CuO were weighed and mixed so that the composition was Tl-Ba-Ca-Cu = 2-2-2-3, and pressed to 2 mm x 2 mm x 10 mm. Pellets. The heat treatment process is performed as shown in FIG. That is, Tl 2 O 3 , BaO, CaO, CuO was previously added to Tl-Ba-Ca-
The powder 11 was prepared by mixing the composition of Cu = 2-1-2-3 and firing in oxygen at 900 ° C. for 5 hours. Fill the pellet 12 with the powder 11 and put it in the alumina crucible 13. Cover with lid 14 and heat in oxygen at 900 ° C for 1 hour. The pellets produced in this way were well sintered without Tl omission, and the surrounding powder adhered to some extent, but could be easily wiped off. This pellet showed good superconducting properties with zero resistance at an absolute temperature of 115K.
（実施例２）酸化マグネシウム単結晶(100)面を基体と
して用い、高周波プレナーマグネトロンスパッタによ
り、焼結したTl-Ba-Ca-Cu-OターゲットをAr,O2混合ガス
中でスパッタリングして、上記基体上にTl-Ba-Ca-Cu-O
薄膜を堆積させた。この場合ターゲット組成はTl-Ba-Ca
-Cu＝2-1-2-3,スパッタガス圧0.5Pa,スパッタリング電
力150W,スパッタリング時間２時間、基体温度200℃であ
った。この結果膜組成がTl-Ba-Ca-Cu2-2-2.5-3の約１
μｍの薄膜が作製された。(Example 2) Using a magnesium oxide single crystal (100) surface as a substrate, a sintered Tl-Ba-Ca-Cu-O target was sputtered in a mixed gas of Ar and O 2 by high frequency planar magnetron sputtering, Tl-Ba-Ca-Cu-O on the above substrate
A thin film was deposited. In this case, the target composition is Tl-Ba-Ca
-Cu = 2-1-2-3, sputtering gas pressure 0.5 Pa, sputtering power 150 W, sputtering time 2 hours, and substrate temperature 200 ° C. As a result, the film composition is about 1 of Tl-Ba-Ca-Cu2-2-2.5-3.
A μm thin film was produced.
このようにして堆積させた薄膜を、第２図に示す３つの
位置で熱処理を行なった。前実施例の粉体11をアルミナ
るつぼ13に入れ、薄膜をそれぞれ配置させた。すなわち
位置ａは粉体11上に膜面を上に向けて薄膜を配置し、位
置ｂは粉体11上に膜面を下に向けたものである。また位
置ｃは粉体11中に埋め込んだものである。この配置で、
酸素中,900℃,30分の熱処理を行なった。通常この条件
で熱処理を行なうと薄膜中のTlは完全になくなり絶縁体
となるが、本発明の実施例ではTlの入った導電性薄膜と
なった。この超電導特性を第３図に示す。位置ａの熱処
理に対して特性は3aのようになり零抵抗温度80K,位置ｂ
に対して特性は3bで零抵抗温度100K,位置ｃに対しては
特性3cで零抵抗温度108Kが得られた。すなわち本発明に
よる熱処理により超電導を示すTl-Ba-Ca-Cu-O薄膜を実
現することができた。The thin film thus deposited was heat-treated at three positions shown in FIG. The powder 11 of the previous example was put into an alumina crucible 13 and the thin films were respectively arranged. That is, at position a, the thin film is placed on the powder 11 with the film surface facing upward, and at position b, the film surface is facing downward on the powder 11. The position c is embedded in the powder 11. With this arrangement,
Heat treatment was performed in oxygen at 900 ℃ for 30 minutes. Usually, when heat treatment is performed under these conditions, Tl in the thin film is completely lost to become an insulator, but in the embodiment of the present invention, a conductive thin film containing Tl is obtained. This superconducting property is shown in FIG. For the heat treatment at position a, the characteristics are as shown in 3a, zero resistance temperature 80K, position b
On the other hand, the characteristic was 3b, and the zero resistance temperature was 100K, and for the position c, the characteristic 3c was the zero resistance temperature of 108K. That is, a Tl-Ba-Ca-Cu-O thin film exhibiting superconductivity could be realized by the heat treatment according to the present invention.
（実施例３） 前実施例で堆積させた薄膜を用いて、第４図の位置ｄの
ように配置して熱処理を行なった。すなわちアルミナる
つぼ13の中に実施例１と同じ粉体11とともに、アルミナ
管41を埋没させた。薄膜は位置ｄのようにアルミナ管41
の中に配置してある。粉体はアルミナ管41の両側から少
し中に入るが、中心部は酸素を含む空間がある。この配
置で、酸素中、900℃,30分の熱処理を行なった。この場
合零抵抗温度112Kを示す超電導薄膜を得ることができ
た。Example 3 Using the thin film deposited in the previous example, the thin film was arranged at the position d in FIG. 4 and heat treatment was performed. That is, the alumina tube 41 was embedded in the alumina crucible 13 together with the same powder 11 as in Example 1. The thin film is the alumina tube 41 as shown in position d.
It is located inside. The powder enters a little from both sides of the alumina tube 41, but there is a space containing oxygen in the center. With this arrangement, heat treatment was performed in oxygen at 900 ° C. for 30 minutes. In this case, a superconducting thin film having a zero resistance temperature of 112K could be obtained.
（実施例４） Tl-Ba-Ca-Cu＝2-1-2-3の組成の酸化物を900℃,5時間焼
いて、第５図に示すような焼結体の容器51および焼結体
のふた52を作った。ふた52には酸素の通り穴53が設けら
れている。前述の堆積膜を位置ｅのように焼結体の中に
配置させ、酸素中900℃,30分の熱処理を行なった。この
結果、零抵抗温度100Kの超電導特性を示す膜が得られ
た。通り穴53がある場合にはない時よりも特性が少し良
い結果であった。(Example 4) An oxide having a composition of Tl-Ba-Ca-Cu = 2-1-2-3 was baked at 900 ° C. for 5 hours to sinter a container 51 of a sintered body as shown in FIG. Made the lid 52 of the body. The lid 52 is provided with an oxygen passage hole 53. The above-mentioned deposited film was placed in the sintered body at the position e, and heat treatment was performed in oxygen at 900 ° C. for 30 minutes. As a result, a film showing superconducting properties with a zero resistance temperature of 100 K was obtained. With the through hole 53, the characteristics were slightly better than when there was no through hole 53.
（実施例５） 第６図に示すような円筒形のTl-Ba-Ca-Cu＝2-1-2-3酸化
物焼結体61,61′を作製し、アルミナ管41の蓋とした。
管41の中の位置ｆに前述の堆積膜を配置し蓋61をして酸
素中,900℃,30分の熱処理を行なった。この場合には被
熱処理物が簡素となり取り扱いやすい。熱処理された薄
膜は超電導を示し、零抵抗温度は105Kであった。(Example 5) Cylindrical Tl-Ba-Ca-Cu = 2-1-2-3 oxide sintered bodies 61 and 61 'as shown in FIG. .
The above-described deposited film was placed at a position f in the tube 41, the lid 61 was covered, and a heat treatment was performed in oxygen at 900 ° C. for 30 minutes. In this case, the object to be heat treated is simple and easy to handle. The heat-treated thin film showed superconductivity and the zero resistance temperature was 105K.
発明の効果 本発明の超電導体の製造方法によると、高臨界温度の期
待の高いTl,Cu,IIa族元素を含む酸化物超電導体作製に
際し、良好な超電導特性を再現性良く簡素に得ることが
できる。特にこれまで困難とされていたこの種の薄膜製
造にも適したものであり、本発明の工業的価値は高い。EFFECTS OF THE INVENTION According to the method for producing a superconductor of the present invention, it is possible to easily obtain good superconducting characteristics with good reproducibility in producing an oxide superconductor containing a highly expected Tl, Cu, or IIa element with a high critical temperature. it can. In particular, it is suitable for manufacturing this type of thin film, which has been considered difficult until now, and the industrial value of the present invention is high.
第１図，第２図，第４図，第５図，第６図は本発明の実
施例における熱処理工程の状態を示す図、第３図は本発
明の実施例において形成された薄膜超電導体の基本特性
図である。 11……Tl-Ba-Ca-Cu-O粉体、12……Tl-Ba-Ca-Cu-Oペレッ
ト、13……アルミナるつぼ、14……アルミナふた、41…
…アルミナ管、61,61′……Tl-Ba-Ca-Cu-O焼結体。1, FIG. 2, FIG. 4, FIG. 5, and FIG. 6 are views showing the state of the heat treatment step in the embodiment of the present invention, and FIG. 3 is the thin film superconductor formed in the embodiment of the present invention. It is a basic characteristic diagram of. 11 …… Tl-Ba-Ca-Cu-O powder, 12 …… Tl-Ba-Ca-Cu-O pellets, 13 …… Alumina crucible, 14 …… Alumina lid, 41…
… Alumina tube, 61,61 ′ …… Tl-Ba-Ca-Cu-O sintered body.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｈ０１Ｂ 12/06 7244−5Ｇ (72)発明者 広地 久美子 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 和佐 清孝 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 平１−264930（ＪＰ，Ａ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI technology display location // H01B 12/06 7244-5G (72) Inventor Kumiko Hirochi 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Kiyotaka Wasa 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-1-264930 (JP, A)
Claims (4)
（Cu），アルカリ土類（IIa族）を含む物質に対し、前
・後・上・下・左・右の周辺一面以上をすくなくともタ
リウムを含む酸化物材料で構成し、熱処理を行うことを
特徴とする超電導体の製造方法。ここでアルカリ土類
は、IIa族元素のうちのすくなくとも一種あるいは二種
以上の元素を示す。1. Thallium containing at least one of the front, rear, upper, lower, left, and right sides of a material containing at least thallium (T1), copper (Cu), and alkaline earth (IIa group) as a main component. A method for manufacturing a superconductor, characterized in that the superconductor is made of an oxide material containing a metal oxide and is heat-treated. Here, the alkaline earth refers to at least one element or two or more elements of the IIa group elements.
上に堆積した薄膜であることを特徴とする特許請求の範
囲第１項記載の超電導体の製造方法。2. The method for producing a superconductor according to claim 1, wherein the substance whose main component is T1, Cu, IIa group is a thin film deposited on a substrate.
から成り、この中に主成分がT1,Cu,IIa族を含む物質を
埋めて熱処理して得ることを特徴とする特許請求の範囲
第１項記載の超電導体の製造方法。3. The oxide material containing T1 disposed in the periphery is made of powder, and a substance containing a T1, Cu, IIa group as a main component is embedded in the oxide material to obtain by heat treatment. 2. A method for manufacturing a superconductor according to claim 1.
て、主成分がT1,Cu,IIa族元素を含む酸化物粉体である
または、主成分がT1,Cu,IIa族元素を含む酸化物焼結体
の容器あるいは封入蓋であることを特徴とする特許請求
の範囲第１項記載の超電導体の製造方法。4. The oxide material containing T1 arranged in the periphery is an oxide powder containing a T1, Cu, IIa group element as a main component, or an oxidation powder containing a T1, Cu, IIa group element as a main component. The method for producing a superconductor according to claim 1, which is a container or an enclosing lid of a sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113947A JPH0672069B2 (en) | 1988-05-11 | 1988-05-11 | Superconductor manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113947A JPH0672069B2 (en) | 1988-05-11 | 1988-05-11 | Superconductor manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01286977A JPH01286977A (en) | 1989-11-17 |
| JPH0672069B2 true JPH0672069B2 (en) | 1994-09-14 |
Family
ID=14625195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63113947A Expired - Fee Related JPH0672069B2 (en) | 1988-05-11 | 1988-05-11 | Superconductor manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0672069B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02167820A (en) * | 1988-08-10 | 1990-06-28 | Sumitomo Electric Ind Ltd | Method for forming T1-based composite oxide superconductor thin film |
| JPH04310521A (en) * | 1991-01-29 | 1992-11-02 | Internatl Business Mach Corp <Ibm> | Method of forming thin oxide film |
| JPH07172831A (en) * | 1993-12-21 | 1995-07-11 | Nec Corp | Heat treatment of thallium-containing superconductor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01264930A (en) * | 1988-04-15 | 1989-10-23 | Hitachi Ltd | Oxide superconductor manufacturing method and applied products |
-
1988
- 1988-05-11 JP JP63113947A patent/JPH0672069B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01286977A (en) | 1989-11-17 |
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