JPH0674166B2 - Porcelain composition for low temperature firing - Google Patents
Porcelain composition for low temperature firingInfo
- Publication number
- JPH0674166B2 JPH0674166B2 JP60270200A JP27020085A JPH0674166B2 JP H0674166 B2 JPH0674166 B2 JP H0674166B2 JP 60270200 A JP60270200 A JP 60270200A JP 27020085 A JP27020085 A JP 27020085A JP H0674166 B2 JPH0674166 B2 JP H0674166B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- low temperature
- porcelain composition
- temperature firing
- porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 title claims description 20
- 229910052573 porcelain Inorganic materials 0.000 title claims description 20
- 238000010304 firing Methods 0.000 title claims description 14
- 239000000654 additive Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、低温焼成用磁器組成物に関し、特に、電気
回路基板、例えば、複数のシート状磁器を積層し、磁器
間に回路を形成してなる多層電気回路基板に適した低温
焼成用磁器組成物に関する。Description: TECHNICAL FIELD The present invention relates to a porcelain composition for low temperature firing, and in particular, an electric circuit board, for example, a plurality of sheet-shaped porcelains are laminated to form a circuit between the porcelains. The present invention relates to a porcelain composition for low temperature firing suitable for a multilayer electric circuit board.
（従来技術） 低い温度で焼成できるとともに、高比抵抗かつ低誘電率
で、誘電体損失の小さい電気回路用基板として、この発
明の発明者らは、未だ公知になっていないが、別途つぎ
のような組成からなるものを提案した。(Prior Art) The inventors of the present invention have not yet publicly known as a substrate for an electric circuit which can be fired at a low temperature, has a high specific resistance and a low dielectric constant, and has a small dielectric loss. We proposed a product with such a composition.
すなわち、この磁器組成物は、SiO225〜80重量％,BaO15
〜70重量％およびB2O31.5〜５重量％からなるもの、お
よび上記した組成にさらに30重量％以下のAl2O3および
／または15重量％以下のTiO2を含有させてなるものであ
る。That is, this porcelain composition is composed of 25 to 80% by weight of SiO 2 , BaO 15
˜70 wt% and B 2 O 3 1.5-5 wt%, and the above composition further containing 30 wt% or less Al 2 O 3 and / or 15 wt% or less TiO 2. is there.
そして、この磁器組成物は、製造過程において、仮焼後
の粉砕などが行い易く、しかも酸化性雰囲気あるいは非
酸化性雰囲気のいずれの雰囲気中で焼成しても、比抵抗
などの電気的特性、抵抗強度などの機械的特性、さらに
熱的特性の変化がないなど、優れた効果を有している。Then, this porcelain composition is easily pulverized after calcination in the manufacturing process, and even if it is fired in any atmosphere of oxidizing atmosphere or non-oxidizing atmosphere, electrical characteristics such as resistivity, It has excellent effects such as no change in mechanical characteristics such as resistance strength and thermal characteristics.
（発明が解決しようとする問題点） しかしながら、これらの磁器組成物からなる磁器基板の
表面において、導体パターン、たとえば銅の焼き付け電
極などを形成する場合、磁器の焼結と電極ペーストの焼
き付けとを同時に行うことがあるが、磁器の焼結時に磁
器中のガラス成分が導体側へ移行し、これによって導体
へのはんだ付け性が低下する現象が認められた。(Problems to be Solved by the Invention) However, in the case of forming a conductor pattern, for example, a copper baking electrode on the surface of a porcelain substrate made of these porcelain compositions, sintering of the porcelain and baking of the electrode paste are performed. Although sometimes performed at the same time, a phenomenon was observed in which the glass component in the porcelain migrated to the conductor side during the sintering of the porcelain, which reduced the solderability to the conductor.
したがって、この発明の主な目的は、はんだ付け性の優
れた低温焼成用磁器組成物を提供することである。Therefore, a main object of the present invention is to provide a porcelain composition for low temperature firing which has excellent solderability.
（問題点を解決するための手段） この発明は、SiO225〜80重量％、BaO,SrOのうち１種ま
たは２種が15〜70重量％およびB2O31.5〜５重量％さら
に必要に応じてAl2O330重量％以下からなる主成分に、C
r2O3,CuO,NiO,Co2O3およびFe2O3のいずれか１種が添加
含有された組成物であり、添加物がCr2O3またはCuOの場
合には0.2〜10重量％の範囲で添加され、添加物がNiO,C
o2O3およびFe2O3の場合には、１〜10重量％の範囲で添
加されることを特徴とする低温焼成用磁器組成物であ
る。(Means for Solving Problems) The present invention further requires 25 to 80% by weight of SiO 2, 15 to 70% by weight of one or two of BaO and SrO, and 1.5 to 5% by weight of B 2 O 3 Depending on the content of Al 2 O 3 up to 30% by weight,
It is a composition containing any one of r 2 O 3 , CuO, NiO, Co 2 O 3 and Fe 2 O 3 , and when the additive is Cr 2 O 3 or CuO, it is 0.2 to 10 weight. %, The additive is NiO, C
In the case of o 2 O 3 and Fe 2 O 3 , the porcelain composition for low temperature firing is characterized by being added in the range of 1 to 10% by weight.
（発明の効果） この発明によれば、導体パターンの形成と磁器の焼結を
同時に行う際に生じる導体のはんだ付け性の低下を防ぐ
ことができるため、低温焼成用磁器組成物からなる基板
上に、チップコンデンサ,ICチップ,Lチップなどのチッ
プ素子の搭載が可能となる。これによって、この低焼成
用磁器組成物からなる基板は、チューナや集積回路など
の多層基板として使用することができ、このことによっ
て高密度実装が可能になり、従来のものより小型化でき
る。(Effects of the Invention) According to the present invention, since it is possible to prevent the soldering property of the conductor from being lowered when the formation of the conductor pattern and the sintering of the porcelain are performed at the same time, it is possible to prevent the deterioration of the solderability of the conductor. It becomes possible to mount chip elements such as chip capacitors, IC chips, and L chips. As a result, the substrate made of this low firing porcelain composition can be used as a multi-layer substrate for a tuner, an integrated circuit, etc., which enables high-density mounting and is more compact than conventional ones.
この発明の上述の目的，その他の目的，特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろ
う。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below.
（実施例） 主成分の原料として、BaCO3またはBaO、SrCO3またはSr
O、SiO2、Al2O3、B2O3あるいはBNまたはB4Cを用い、添
加物として、Cr2O3、CuO、NiO、Co2O3およびFe2O3を用
い、これらを別表に示す組成比率の磁器が得られるよう
に秤量し調合した。この各原料混合物を850〜950℃で仮
焼し、粉砕した後、有機バインダーを加えて混練し、ド
クターブレード法によって厚さ1mmのシート状に成形
し、グリーンシートとした。(Example) As a main ingredient material, BaCO 3 or BaO, SrCO 3 or Sr
O, SiO 2 , Al 2 O 3 , B 2 O 3 or BN or B 4 C is used, and as additives, Cr 2 O 3 , CuO, NiO, Co 2 O 3 and Fe 2 O 3 are used. The porcelain having the composition ratio shown in the attached table was weighed and prepared. Each of the raw material mixtures was calcined at 850 to 950 ° C., pulverized, added with an organic binder, kneaded, and molded into a sheet having a thickness of 1 mm by a doctor blade method to obtain a green sheet.
このグリーンシートを縦30mm,横10mmの角板状にカット
し、その表面上に粒径５μｍ以下の銅粉末と有機質ビヒ
クルとを重量比80:20の割合で混合した銅ペーストを印
刷した。そしてこれを窒素−水蒸気の還元性もしくは非
酸化性雰囲気の中で、900〜1100℃で１時間焼成して試
験試料とした。This green sheet was cut into a rectangular plate having a length of 30 mm and a width of 10 mm, and a copper paste obtained by mixing a copper powder having a particle size of 5 μm or less and an organic vehicle in a weight ratio of 80:20 was printed on the surface thereof. Then, this was fired in a reducing or non-oxidizing atmosphere of nitrogen-steam at 900 to 1100 ° C for 1 hour to obtain a test sample.
この試験試料について、予め150℃で20秒予熱し、銅電
極表面に塩素系のフラックスを付けた後、230±10℃の
鉛−錫はんだ槽に５秒間浸漬し、はんだ付けを行った。
また比抵抗も直列100Vの条件下で合わせて測定し、その
結果を焼成温度とともに別表に示した。This test sample was preheated at 150 ° C. for 20 seconds in advance, a chlorine-based flux was applied to the copper electrode surface, and then immersed in a lead-tin solder bath at 230 ± 10 ° C. for 5 seconds for soldering.
The specific resistance was also measured under the condition of 100 V in series, and the results are shown in the attached table together with the firing temperature.
なお、はんだ付け性の判定は、目視で銅電極表面を見た
とき、はんだが銅電極表面を90面積％以上を被覆してい
る場合を「○」とし、90面積％未満の場合を「×」とし
た。The solderability is determined by visually observing the copper electrode surface. When the solder covers the copper electrode surface at 90 area% or more, it is marked with "○", and when it is less than 90 area%, it is marked with "×". "
また、別表で＊を付した試料は、この発明の範囲外のも
のであり、それ以外はこの発明の範囲内のものである。The samples marked with * in the attached table are outside the scope of the present invention, and other samples are within the scope of the present invention.
この発明の低温焼成用磁器組成物における主成分および
添加物の限定理由はつぎの通りである。The reasons for limiting the main components and additives in the low temperature firing porcelain composition of the present invention are as follows.
（１） 主成分SiO2を25〜80重量％としたのは、つぎの
通りである。(1) The main component SiO 2 was set to 25 to 80% by weight as follows.
主成分SiO2が、25重量％未満では誘電率が10よりも高く
なり、使用周波数が高い場合に電子機器の特性の劣化を
招く。また、80重量％を越えると抗折強度が実用可能な
1500kg/cm2より小さくなり、同時に焼結温度も1000℃以
上となって内部電極材料にCuを使用できなくなり好まし
くない。If the main component SiO 2 is less than 25% by weight, the dielectric constant will be higher than 10, and the characteristics of electronic devices will be deteriorated when the frequency used is high. If it exceeds 80% by weight, the bending strength is practical.
It becomes less than 1500 kg / cm 2 , and at the same time, the sintering temperature becomes 1000 ° C. or more, and Cu cannot be used for the internal electrode material, which is not preferable.
（２） 主成分BaOを15〜70重量％としたのは、主成分B
aOが、15重量％未満では抵抗強度が実用可能な1500kg/c
m2より小さくなり、70重量％を越えると、誘電率が10よ
り大きくなり、好ましくないからである。(2) The main component BaO is set to 15 to 70% by weight because the main component B is
If aO is less than 15% by weight, practical resistance strength is 1500 kg / c
If it is smaller than m 2 and exceeds 70% by weight, the dielectric constant becomes larger than 10 and this is not preferable.
（３） 主成分B2O3を1.5〜５重量％としたのは、主成
分B2O3が、1.5重量％未満では焼結温度が1000℃以上に
なり、５重量％を越えると抗折強度が1500kg/cm2より小
さくなり好ましくないからである。(3) The main component B 2 O 3 is set to 1.5 to 5% by weight because the sintering temperature is 1000 ° C or more when the main component B 2 O 3 is less than 1.5% by weight and the sintering temperature exceeds 5% by weight. This is because the folding strength is less than 1500 kg / cm 2 , which is not preferable.
（４） 必要に応じて添加される主成分Al2O3は、焼結
温度および誘電率を低下させる効果があるが、30重量％
を越えると誘電体損失が0.2以上に大きくなるので好ま
しくない。(4) The main component Al 2 O 3, which is added if necessary, has the effect of lowering the sintering temperature and dielectric constant, but it is 30% by weight.
If it exceeds 1.0, the dielectric loss increases to 0.2 or more, which is not preferable.
（５） 添加物Cr2O3およびCuOが0.2重量％未満になる
とはんだ付け性が悪くなり（別表の試料番号３および試
料番号８参照）、10重量％を越えると比抵抗が低くな
り、（別表の試料番号12参照）好ましくない。(5) If the additives Cr 2 O 3 and CuO are less than 0.2% by weight, the solderability becomes poor (see sample No. 3 and sample No. 8 in the attached table), and if the amount exceeds 10% by weight, the specific resistance becomes low. See sample No. 12 in the attached table) Not preferred.
（６） 添加物NiO,Co2O3およびFe2O3が１重量％未満に
なるとはんだ付け性が悪くなり、10重量％を越えると比
抵抗が小さくなり（別表の試料番号11参照）好ましくな
い。(6) If the additives NiO, Co 2 O 3 and Fe 2 O 3 are less than 1% by weight, the solderability becomes poor, and if it exceeds 10% by weight, the specific resistance becomes small (see sample No. 11 in the attached table). Absent.
なお、この発明の低温焼成用磁器組成物を用いて電気回
路基板を製造する場合は、たとえば、つぎのようにして
行うことができる。主成分の原料であるBaおよびSrのう
ち１種または２種、Si、ＢおよびAlの酸化物もしくは焼
成時に分解して酸化物となる化合物の粉末と添加物であ
るCr2O3、CuO、NiO、Co2O3およびFe2O3のいずれか１種
の粉末を秤量、調合し、その原料混合物を850〜950℃で
仮焼した後、粉砕し、その粉末をバインダーと混練して
からシート状に成形する。そして、得られたグリーンシ
ートを酸化性雰囲気あるいは非酸化性もしくは還元性雰
囲気中で、850℃〜1000℃で焼成すればよい。また、多
層電気回路基板を製造する場合は、グリーンシート上に
Ag,Ag−Pd,Cu,Niなどの導電材料を含有する導電性ペー
ストで回路を印刷し、それらを複数積層してから、導電
性ペーストを構成する導電材料に応じた雰囲気中で焼成
すればよい。内部導電材料としてCuやNiなどの卑金属を
使用する場合、それらの酸化を防止するため、非酸化性
もしくは還元性の雰囲気中で焼成するのが好ましい。た
とえば、窒素をキャリアガスとして水蒸気（70℃）中を
通過させ、酸素および水素の含有量を微量含有させた窒
素−水蒸気雰囲気（ふつう、N299.7〜99.8％）中で、85
0〜1000℃で焼成するのが好ましい。なお、酸素を微量
含有させるのは、グリーンシートの形成に使用するバイ
ンダーが仮焼しても、炭素として残存しているため、こ
れを完全焼成させて除去するためである。When an electric circuit board is manufactured using the low temperature firing porcelain composition of the present invention, it can be carried out, for example, as follows. One or two of Ba and Sr which are raw materials of the main component, powders of oxides of Si, B and Al or compounds which decompose into oxides upon firing and Cr 2 O 3 , CuO which are additives, Powder of any one of NiO, Co 2 O 3 and Fe 2 O 3 is weighed and blended, the raw material mixture is calcined at 850 to 950 ° C., then pulverized, and the powder is kneaded with a binder. Form into a sheet. Then, the obtained green sheet may be fired at 850 ° C. to 1000 ° C. in an oxidizing atmosphere or a non-oxidizing or reducing atmosphere. Also, when manufacturing a multilayer electric circuit board, place it on the green sheet.
If a circuit is printed with a conductive paste containing a conductive material such as Ag, Ag-Pd, Cu, or Ni, and a plurality of these are stacked, then firing is performed in an atmosphere according to the conductive material forming the conductive paste. Good. When using a base metal such as Cu or Ni as the internal conductive material, it is preferable to perform firing in a non-oxidizing or reducing atmosphere in order to prevent oxidation of the base metal. For example, in a nitrogen-steam atmosphere (usually N 2 99.7 to 99.8%) containing nitrogen and a small amount of oxygen and hydrogen, which is passed through steam (70 ° C.) with nitrogen as a carrier gas, 85
It is preferable to bake at 0 to 1000 ° C. It should be noted that the reason why a small amount of oxygen is contained is that even if the binder used for forming the green sheet is calcined, it remains as carbon and is completely burned to be removed.
Claims (2)
たは２種が15〜70重量％およびB2O31.5〜５重量％から
なる主成分に、Cr2O3,CuO,NiO,Co2O3およびFe2O3のいず
れか１種が添加含有された磁器組成物であり、 添加物がCr2O3またはCuOの場合には0.2〜10重量％の範
囲で添加され、添加物がNiO,Co2O3およびFe2O3の場合に
は、１〜10重量％の範囲で添加されることを特徴とする
低温焼成用磁器組成物。1. A main component consisting of 25 to 80% by weight of SiO 2, 15 to 70% by weight of one or two of BaO and SrO and 1.5 to 5% by weight of B 2 O 3 , and Cr 2 O 3 , It is a porcelain composition containing any one of CuO, NiO, Co 2 O 3 and Fe 2 O 3 , and when the additive is Cr 2 O 3 or CuO, the content is in the range of 0.2 to 10% by weight. A porcelain composition for low temperature firing, which is added in the range of 1 to 10% by weight when the additives are NiO, Co 2 O 3 and Fe 2 O 3 .
有する特許請求の範囲第１項記載の低温焼成用磁器組成
物。2. A porcelain composition for low temperature firing according to claim 1, which contains 30% by weight or less of Al 2 O 3 as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60270200A JPH0674166B2 (en) | 1985-11-30 | 1985-11-30 | Porcelain composition for low temperature firing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60270200A JPH0674166B2 (en) | 1985-11-30 | 1985-11-30 | Porcelain composition for low temperature firing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62128964A JPS62128964A (en) | 1987-06-11 |
| JPH0674166B2 true JPH0674166B2 (en) | 1994-09-21 |
Family
ID=17482922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60270200A Expired - Lifetime JPH0674166B2 (en) | 1985-11-30 | 1985-11-30 | Porcelain composition for low temperature firing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0674166B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288232A (en) * | 1988-09-27 | 1990-03-28 | Asahi Glass Co Ltd | Low temperature sintered multilayer base and its composition |
| JP2007043162A (en) * | 2006-07-31 | 2007-02-15 | Ngk Insulators Ltd | Electronic component |
| US20220135484A1 (en) * | 2019-02-27 | 2022-05-05 | Ferro Corporation | LTCC Dielectric Compositions And Devices Having High Q Factors |
-
1985
- 1985-11-30 JP JP60270200A patent/JPH0674166B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62128964A (en) | 1987-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0163478B1 (en) | Process of manufacturing ceramic circuit board | |
| JPH0821266B2 (en) | Dielectric paste | |
| KR100245448B1 (en) | Ceramic capacitor and method for fabricating the same | |
| JP3638414B2 (en) | Dielectric porcelain composition | |
| JPH0674166B2 (en) | Porcelain composition for low temperature firing | |
| JPH0798679B2 (en) | Low temperature sintered porcelain composition | |
| JPH0674167B2 (en) | Porcelain composition for low temperature firing | |
| JP4714986B2 (en) | Dielectric ceramic composition and multilayer substrate using the same | |
| JP2600778B2 (en) | Low temperature sintering porcelain composition for multilayer substrate | |
| JP4419487B2 (en) | Oxide porcelain composition, ceramic multilayer substrate and ceramic electronic component | |
| JPWO2001056047A1 (en) | Conductor pattern embedded in multilayer board, multilayer board with a built-in conductor pattern, and method for manufacturing multilayer board | |
| JPH0676255B2 (en) | Low temperature sintered porcelain composition for multilayer substrate | |
| JPH0798678B2 (en) | Low temperature sintered porcelain composition | |
| JPH03129809A (en) | Laminated ceramic chip capacitor and manufacture thereof | |
| JPS6235696A (en) | Ceramic substrate for electric circuit and manufacture thereof | |
| JP2546311B2 (en) | Conductive paste for ceramic electronic parts | |
| JP3134430B2 (en) | Non-reducing dielectric ceramic composition | |
| JPH0674168B2 (en) | Porcelain composition for electric circuit board | |
| JP3744739B2 (en) | Multilayer ceramic capacitor | |
| JPH1174144A (en) | Multilayer ceramic capacitors | |
| JPS6393193A (en) | Method for manufacturing copper conductor thick film circuit board | |
| JPH0676253B2 (en) | Low temperature sintered porcelain composition for multilayer substrate | |
| JP2001284816A (en) | Multilayer circuit board and its manufacturing method | |
| JPH024549B2 (en) | ||
| JP3070238B2 (en) | Manufacturing method of multilayer ceramic element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |