JPH0674514B2 - Copper pyrophosphate aqueous solution for anisotropic plating - Google Patents
Copper pyrophosphate aqueous solution for anisotropic platingInfo
- Publication number
- JPH0674514B2 JPH0674514B2 JP59132983A JP13298384A JPH0674514B2 JP H0674514 B2 JPH0674514 B2 JP H0674514B2 JP 59132983 A JP59132983 A JP 59132983A JP 13298384 A JP13298384 A JP 13298384A JP H0674514 B2 JPH0674514 B2 JP H0674514B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- plating
- pyrophosphate
- concentration
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 title claims description 38
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 title claims description 20
- 239000007864 aqueous solution Substances 0.000 title claims description 6
- 239000010949 copper Substances 0.000 claims description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 10
- 229910001431 copper ion Inorganic materials 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 claims description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 241000784732 Lycaena phlaeas Species 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000011889 copper foil Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000013019 agitation Methods 0.000 description 5
- 238000005282 brightening Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PTVDYARBVCBHSL-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu] PTVDYARBVCBHSL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Description
【発明の詳細な説明】 <産業上の利用分野> 本発明は、異方性めっき用ピロリン酸銅水溶液に関する
ものである。ここでいう異方性Kとは第1図に示す如
く、あるめっきされる面の巾(A0)に対して平行方向へ
のめっきの伸びA1に対して垂直方向への伸びBの比を示
したもので、式 で表わされる。K>1の時異方性があるという。DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> The present invention relates to an aqueous copper pyrophosphate solution for anisotropic plating. As shown in FIG. 1, the anisotropy K is the ratio of the elongation A 1 of the plating in the direction parallel to the width (A 0 ) of a surface to be plated to the elongation B 1 in the direction perpendicular to it. And the expression It is represented by. There is anisotropy when K> 1.
<従来の技術> 従来から精密な印刷回路基板をつくる場合フオトリソグ
ラフイがよく用いられてきたが特にアデイテイブ法を用
いることによつて高配線密度の回路基板ができかなり有
利な製造法であるとされてきている。<Prior Art> Photolithography has been often used in the past for the production of precise printed circuit boards. In particular, by using the additive method, a circuit board having a high wiring density can be obtained, which is a considerably advantageous manufacturing method. Has been done.
しかしながら、この製造法を用いた印刷回路基板では異
方性Kの値が1を越えないことから厚くて微細なパター
ンを製造することが困難であつた。それは例えば、ある
線状に並んだパターンにめっきを行う場合めっき前のパ
ターンの線間隔が100μmであり、それに50μmの厚さ
のめっきをつければ異方性Kが1だからめっき幅も50μ
mずつ広がり線間でショートしてしまう。However, since the value of the anisotropy K does not exceed 1 in the printed circuit board using this manufacturing method, it is difficult to manufacture a thick and fine pattern. For example, when plating a pattern arranged in a certain line shape, the line spacing of the pattern before plating is 100 μm, and if plating with a thickness of 50 μm is applied, the anisotropy K is 1 and the plating width is 50 μm.
It spreads by m and shorts out between the lines.
一方、本発明者らはすでに特願昭55−166614号(特開昭
57−91590号公報)の中でめっきの電流密度を高くする
ことでKの値を大きくすることを明らかにした。そのた
めに微細な印刷回路基板を厚くめっきすることができる
ようになつた。On the other hand, the present inventors have already proposed Japanese Patent Application No.
57-91590), it was clarified that the value of K is increased by increasing the current density of plating. Therefore, it has become possible to thickly plate a fine printed circuit board.
<発明が解決しようとする問題点> しかしながら、さらに微細なパターンの印刷回路基板を
つくるにはKの値をより高くすることが望ましい。<Problems to be Solved by the Invention> However, in order to manufacture a printed circuit board having a finer pattern, it is desirable to increase the value of K.
<問題点を解決するための手段及び作用> 本発明者らは、ピロリン酸銅めっき液の組成条件につい
て詳細に検討した結果必要とされる銅物性・表面平滑度
を維持したままで、よりKの値を高くできる組成物を見
い出した。<Means and Actions for Solving Problems> The inventors of the present invention have studied the composition conditions of the copper pyrophosphate plating solution in detail, and as a result, while maintaining the required copper physical properties and surface smoothness, K We have found a composition that can increase the value of.
すなわち A.銅イオン濃度〔Cu2+〕22〜42g/、 B.ピロリン酸イオン濃度〔P2O7 4-〕/銅イオン濃度〔Cu
2+〕重量比6.0〜8.0、 C.アンモニア濃度〔NH3〕0.03〜0.20mol/、 D.2,5−ジメルカプト−1,3,4−チアジアゾール又はその
塩5.0×10-7〜2.0×10-5mol/、 E.pHは8.2〜9.0 からなるめっき液である。That is, A. copper ion concentration [Cu 2+ ] 22 to 42 g /, B. pyrophosphate ion concentration [P 2 O 7 4 − ] / copper ion concentration [Cu
2+] weight ratio 6.0 to 8.0, C. ammonia concentration [NH 3] 0.03~0.20mol /, D.2,5- dimercapto-1,3,4-thiadiazole or its salt 5.0 × 10 -7 ~2.0 × 10 -5 mol /, E.pH is 8.2 ~ 9.0.
本発明のピロリン酸銅水溶液をつくるには、市販のピロ
リン酸銅めっき液にピロリン酸カリウムとピロリン酸銅
を加え、さらにアンモニア水及びピロリン酸銅メッキ用
光沢剤を加え前記組成条件に調節する。またはピロリン
酸カリウムとピロリン酸銅を水に所定量溶解させ、さら
にアンモニア水及びピロリン酸銅メッキ用光沢剤を加え
る方法でもよい。In order to prepare the copper pyrophosphate aqueous solution of the present invention, potassium pyrophosphate and copper pyrophosphate are added to a commercially available copper pyrophosphate plating solution, and further ammonia water and a brightening agent for copper pyrophosphate plating are added to adjust the composition conditions described above. Alternatively, a method may be used in which potassium pyrophosphate and copper pyrophosphate are dissolved in water in predetermined amounts, and then ammonia water and a brightening agent for copper pyrophosphate plating are added.
本発明のピロリン酸銅水溶液のピロリン酸イオンP2O7 4-
の銅イオンCu2+に対する重量濃度比の値をP比 は、6.0〜8.0、好ましくは6.0〜7.8、さらに好ましくは
6.3〜7.5である。P比が6.0より低い場合には、いわゆ
るくもりが生じる。また、8.0より高い場合には限界電
流密度が低くなり、やけやすくなる。Pyrophosphate ion P 2 O 7 4-of the copper pyrophosphate aqueous solution of the present invention
The value of the weight concentration ratio of copper ion to Cu 2+ is P ratio Is 6.0 to 8.0, preferably 6.0 to 7.8, more preferably
It is 6.3 to 7.5. When the P ratio is lower than 6.0, so-called clouding occurs. On the other hand, when it is higher than 8.0, the limiting current density becomes low and it becomes easy to burn.
また、銅イオン濃度〔Cu2+〕は22〜42g/、好ましくは
28〜42g/、さらに好ましくは30〜40g/である。銅イ
オン濃度が22g/より低い場合は限界電流密度が低くな
りやけやすくなる。また42g/より高い場合はくもりが
生じる。The copper ion concentration [Cu 2+ ] is 22 to 42 g /, preferably
28-42 g /, more preferably 30-40 g /. When the copper ion concentration is lower than 22 g /, the limiting current density is low and it becomes easy to burn. If it is higher than 42g /, cloudiness will occur.
さらに、アンモニア濃度〔NH3〕は、0.03〜0.20mol/
、好ましくは0.05〜0.20mol/、さらに好ましくは0.
08〜0.16mol/である。アンモニア濃度が0.03mol/よ
り低い場合は限界電流密度がさがり光沢範囲が狭くな
る。また0.20mol/より高い場合は硬くてもろい銅が析
出する。Furthermore, the ammonia concentration [NH 3 ] is 0.03 to 0.20 mol /
, Preferably 0.05 to 0.20 mol /, more preferably 0.
It is from 08 to 0.16 mol /. When the ammonia concentration is lower than 0.03 mol /, the limiting current density decreases and the gloss range becomes narrow. If it is higher than 0.20mol /, hard and brittle copper is precipitated.
さらにまた、光沢剤としては2,5−ジメルカプト−1,3,4
−チアジアゾール又はその塩がよい。その濃度として
は、5.0×10-7〜2.0×10-5mol/、好ましくは5.0×10
-7〜6.5×10-6mol/、さらに好ましくは5.0×10-7〜3.
4×10-6mol/が良い。Furthermore, as a brightener, 2,5-dimercapto-1,3,4
-Thiadiazole or its salts are preferred. As its concentration, 5.0 × 10 -7 ~ 2.0 × 10 -5 mol /, preferably 5.0 × 10
-7 to 6.5 × 10 -6 mol /, more preferably 5.0 × 10 -7 to 3.
4 × 10 -6 mol / is good.
上記薬品は光沢剤としてよく用いられる物であり、試薬
でもめっき液メーカーから光沢剤として市販されている
ものでも良い。光沢剤は銅メッキ表面の凸部に選択的に
付着することによりその部分のめっき銅の析出を抑制し
相対的に凹部の銅の析出を促進させそれによつて平滑化
が行われると一般には言われている。このことが正しい
とすればめっきの異方性においては光沢剤は負の働きを
すると推定される。しかしながらその原因はよくわから
ないが光沢剤がある領域にある場合、特に低濃度領域に
ある場合にはむしろ異方性が無光沢剤浴より高くなり、
しかも光沢剤本来の効果つまり表面平滑化作用も機能上
十分である。添加剤濃度が5.0×10-7mol/以下では異
方性向上は起こらない。また2.0×10-5mol/以上にお
いては、表面平滑度は向上するが異方性が光沢剤濃度と
ともに低下し、光沢剤を添加していない浴を使つた時の
異方性と等しくなる。本発明のポイントは微量に光沢剤
を添加することにより表面平滑性を維持しつつ異方性を
高めたことにある。The above chemicals are often used as brighteners, and may be reagents or commercially available as brighteners from plating solution manufacturers. It is generally said that the brightener selectively adheres to the convex portion of the copper plating surface to suppress the deposition of plated copper on that portion and relatively promotes the deposition of copper in the concave portion, thereby smoothing. It is being appreciated. If this is correct, it is presumed that the brightener has a negative effect on the anisotropy of plating. However, although the cause is not well understood, the anisotropy is higher than that of the matte bath when the brightener is in an area, particularly in a low concentration area,
In addition, the original effect of the brightening agent, that is, the surface smoothing effect is also functionally sufficient. When the additive concentration is 5.0 × 10 -7 mol / or less, the anisotropy does not improve. Further, at 2.0 × 10 −5 mol / or more, the surface smoothness is improved, but the anisotropy decreases with the concentration of the brightener, and becomes equal to the anisotropy when a bath containing no brightener is used. The point of the present invention is to increase the anisotropy while maintaining the surface smoothness by adding a slight amount of a brightening agent.
以上の様な組成条件においては、PHは8.2〜9.0の間にな
るはずであるが、もしもPHがこれより低い時はKOH、高
い時はポリリン酸或いはクエン酸や各メッキ液メーカー
から市販されているPH調整剤で上記範囲、さらに好まし
くはPH8.4〜8.8に調節する。Under the above compositional conditions, PH should be between 8.2 and 9.0, but if PH is lower than this, KOH is used, and if PH is higher, polyphosphoric acid or citric acid is commercially available from each plating solution manufacturer. The pH is adjusted to within the above range, and more preferably to pH 8.4 to 8.8.
本発明のピロリン酸銅水溶液を用いてめっきを行なう場
合、カソードの電流密度は3〜50A/dm2、好ましくは5
〜20A/dm2が良い。When plating is performed using the copper pyrophosphate aqueous solution of the present invention, the current density of the cathode is 3 to 50 A / dm 2 , preferably 5
~ 20A / dm 2 is good.
撹拌は必要で、空気撹拌でもポンプ撹拌でも、カソード
揺動でもまたそれらを組み合わせても良いが、例えば空
気撹拌ならそのエアー流量は0.01〜1.0M3/M2分(単位メ
ッキ槽液面積当りに1分間に流す空気量の標準状態での
体積)が好ましい。またメッキ中の浴温は一般に行われ
ている様に50〜60℃が好ましい。Agitation is required, and air agitation, pump agitation, cathode oscillation, or a combination thereof may be used. For example, in the case of air agitation, the air flow rate is 0.01 to 1.0 M 3 / M 2 minutes (per unit plating bath liquid area The volume of air flowing in one minute in a standard state) is preferable. The bath temperature during plating is preferably 50 to 60 ° C., as is generally done.
メッキの下地としては、導電性があれば何んでもよく、
例えば金属なら銅、ニッケル、アルミニウム等が考えら
れる。Any plating base may be used as long as it has conductivity.
For example, the metal may be copper, nickel, aluminum or the like.
その他メッキ装置等については、一般に行われているも
のなら特に問題はない。There is no particular problem with other plating devices as long as they are commonly used.
<実施例> 以下に本発明の態様を一層明確にする為に、実施例を挙
げて説明するが、本発明は以下の実施例に限定されるも
のではなく、種々の変形が可能である。<Examples> In order to further clarify the aspects of the present invention, examples will be described below, but the present invention is not limited to the following examples, and various modifications can be made.
実施例1〜4 絶縁性ポリイミドフィルム(デュポン社製商品名;「カ
プトン」)厚さ25μmのものに5μm厚銅箔をフエノー
ル樹脂系接着剤(ボスチック社製商品名;「XA−564−
4」)を使って接着する。次にネガ型レジスト(イース
トマンコダック社製商品名;「マイクロレジスト747−1
10cst」)を乾燥後レジスト厚が3〜5μmになる様に
銅面に塗布し、プリベーク後、回路パターンマスクを通
して高圧水銀ランプで露光し、現像液(イーストマンコ
ダック社製商品名;「マイクロレジストデベロッパ
ー」)及びリンス液(イーストマンコダック社製商品
名;「マイクロレジストリンス」)で現像し、ポストベ
ークして回路パターン状にレジストを形成する。続いて
塩化第2鉄50%溶液により銅箔をエッチング除去する。
さらにレジスト剥離剤(ナガセ化成工業社製商品名;
「J−100」)を使用し銅箔上のレジストを除去する。Examples 1 to 4 Insulating polyimide film (trade name manufactured by DuPont; “Kapton”) having a thickness of 25 μm and copper foil with a thickness of 5 μm and phenol resin adhesive (trade name manufactured by Bostic Co .; “XA-564-
4 ”) to bond. Next, negative resist (trade name, manufactured by Eastman Kodak Co .; "Microresist 747-1
10cst ") is applied to the copper surface after drying so that the resist thickness becomes 3 to 5 μm, and after prebaking, it is exposed with a high pressure mercury lamp through a circuit pattern mask, and a developing solution (trade name of Eastman Kodak Co .; Developer ") and a rinse solution (trade name of" Eastman Kodak Co., Ltd .; "Microresistance"), and post-baked to form a resist in a circuit pattern. Then, the copper foil is removed by etching with a 50% ferric chloride solution.
Furthermore, a resist stripper (trade name of Nagase Kasei Co., Ltd .;
"J-100") is used to remove the resist on the copper foil.
この結果、膜厚5μm、幅130μm、配列ピッチ200μm
の線状パターンが得られた。次にピロリン酸銅メッキ液
(ハーショウ村田社製商品名;「ピロドンコンク」)
に、ピロリン酸カリ、ピロリン酸銅及び水を適量加え
て、その組成が銅イオン濃度34g/、P社=7になる様
調節したのち、濃度28%のアンモニア水を適量加え、ア
ンモニアに換算して0.08mol/の濃度にピロリン酸銅め
っき用光沢剤(ハーショウ村田社製商品名;「CP−
2」)を1.7×10-1mol/添加して調節し、その後、こ
の調合されたメッキ液のpHが8.7になる様KOH5%溶液
又、は、pH調整液(ハーショウ村田社製)を加えた。こ
のメッキ液を用いて、前記の線状銅パターンを電流密度
5.8A/dm2、空気撹拌0.1M3/M2分、浴温55℃の条件下でメ
ッキを行った。この結果、高い異方性が発揮された。さ
らに実施例2〜4は、表1の如く銅イオン濃度、P比、
アンモニア濃度、光沢剤CP−2濃度を調節し、さらにpH
を調節したメッキ浴を用い前記と同様の銅線状パターン
に同一の条件でメッキを行った。その結果得られたパタ
ーンの厚み、幅を測定した結果を表1に示す。なおいず
れの場合も銅物性は実用上充分なものであった。As a result, film thickness 5μm, width 130μm, array pitch 200μm
The following linear pattern was obtained. Next, copper pyrophosphate plating solution (Harshaw Murata Co., Ltd. product name; "Pyrodon Conc")
Then, potassium pyrophosphate, copper pyrophosphate and water were added in appropriate amounts to adjust the composition to a copper ion concentration of 34 g /, Company P = 7, and then an appropriate amount of 28% concentration ammonia water was added to convert to ammonia. Brightness for copper pyrophosphate plating at a concentration of 0.08 mol / (Hershaw Murata brand name; “CP-
2 ") is added at 1.7 × 10 -1 mol / mol to adjust the pH of the prepared plating solution to 8.7, and then a pH adjusting solution (Hershaw Murata Co., Ltd.) is added. It was With this plating solution, the linear copper pattern is
The plating was performed under the conditions of 5.8 A / dm 2 , air stirring 0.1 M 3 / M 2 minutes, and bath temperature 55 ° C. As a result, high anisotropy was exhibited. Further, in Examples 2 to 4, as shown in Table 1, the copper ion concentration, P ratio,
Adjust ammonia concentration and brightener CP-2 concentration to further adjust pH
Using the plating bath adjusted to the above, a copper linear pattern similar to the above was plated under the same conditions. The results of measuring the thickness and width of the resulting pattern are shown in Table 1. In each case, the physical properties of copper were practically sufficient.
比較例1〜2 絶縁性ポリイミドフィルム(デュポン社製商品名;「カ
プトン」)厚さ25μmのものに5μm厚銅箔をフエノー
ル樹脂系接着剤(ボスチック社製商品名;「XA−564−
4」)を使って接着する。次にネガ型レジスト(イース
トマンコダック社製商品名;「マイクロレジスト747−1
10cst」)を乾燥後レジスト厚が3〜5μmになる様に
銅面に塗布し、プリベーク後、回路パターンマスクを通
して高圧水銀ランプで露光し、現像液(イーストマンコ
ダック社製商品名;「マイクロレジストデベロッパ
ー」)及びリンス液(イーストマンコダック社製商品
名;「マイクロレジストリンス」)で現像し、ポストベ
ークして回路パターン状にレジストを形成する。続い
て、塩化第2鉄50%溶液により銅箔をエッチング除去す
る。さらにレジスト剥離剤(ナガセ化成工業社製商品
名;「J−100」)を使用し、銅箔上のレジストを除去
する。Comparative Examples 1 to 2 Insulating polyimide film (Dupont's trade name; “Kapton”) with a thickness of 25 μm and 5 μm thick copper foil with phenol resin adhesive (Bostik's trade name; “XA-564—
4 ”) to bond. Next, negative resist (trade name, manufactured by Eastman Kodak Co .; "Microresist 747-1
10cst ") is applied to the copper surface after drying so that the resist thickness becomes 3 to 5 μm, and after prebaking, it is exposed with a high pressure mercury lamp through a circuit pattern mask, and a developing solution (trade name of Eastman Kodak Co .; Developer ") and a rinse solution (trade name of" Eastman Kodak Co., Ltd .; "Microresistance"), and post-baked to form a resist in a circuit pattern. Then, the copper foil is removed by etching with a 50% ferric chloride solution. Further, the resist on the copper foil is removed by using a resist remover (trade name: "J-100" manufactured by Nagase Kasei Co., Ltd.).
この結果、膜厚5μm、幅130μm、配列ピッチ200μm
の線状パターンが得られた。次にピロリン酸銅メッキ液
(ハーショウ村田社製)に、ピロリン酸カリ、ピロリン
酸銅及び水を適量加えて、その組成が銅イオン濃度34g/
、P比=7になる様調節し、さらに濃度28%のアンモ
ニア水を適量加え、アンモニアに換算して0.08mol/の
濃度にさらにピロリン酸銅めっき用光沢剤(ハーショウ
村田社製商品名;「CP−2」)を3.0×10-5mol/添加
して調節し、その後、この調合されたメッキ液のpHが8.
7になる様KOH5%溶液又はpH調整液(ハーショウ村田社
製)を加えた。As a result, film thickness 5μm, width 130μm, array pitch 200μm
The following linear pattern was obtained. Next, to the copper pyrophosphate plating solution (manufactured by Harshaw Murata Co., Ltd.), potassium pyrophosphate, copper pyrophosphate and water were added in appropriate amounts, and the composition was 34 g / copper ion concentration.
, P ratio = 7, and further add an appropriate amount of 28% concentration of ammonia water, and convert it into ammonia to a concentration of 0.08 mol /, and further brightener for copper pyrophosphate plating (Hershaw Murata brand name; CP-2 ") was added to adjust the concentration to 3.0 × 10 -5 mol / mol, and then the pH of the prepared plating solution was adjusted to 8.
A KOH 5% solution or a pH adjusting solution (manufactured by Hershaw Murata Co., Ltd.) was added so that it became 7.
この様なメッキ液を用いて、前記の線状銅パターンを電
流密度5.8A/dm2、空気撹拌0.1M3/M2分浴温55℃の条件化
でメッキを行つた。(比較例1) この結果を表1に示す。Using such a plating solution, the above-mentioned linear copper pattern was plated under the conditions of a current density of 5.8 A / dm 2 and air agitation of 0.1 M 3 / M 2 minutes bath temperature of 55 ° C. Comparative Example 1 The results are shown in Table 1.
また、ピロリン酸銅めっき用光沢剤を含まないメッキ液
を用いる以外は上記比較例1と同様にしてメッキを行つ
た。その結果を表1に示す。(比較例2) <効 果> 本願にある構成要素からなるピロリン酸銅水溶液を用い
ると、電子部品として機能上充分な表面性を保ちつつ異
方性Kの高いめっきが可能となり、これを利用して従来
よりも厚い微細なパターンの印刷回路基板を製造するこ
とが可能となつた。In addition, plating was performed in the same manner as in Comparative Example 1 except that a plating solution containing no brightening agent for copper pyrophosphate plating was used. The results are shown in Table 1. (Comparative example 2) <Effect> By using the aqueous solution of copper pyrophosphate composed of the constituent elements of the present application, it is possible to perform plating with high anisotropy K while maintaining a surface property that is functionally sufficient as an electronic component. It is possible to manufacture a printed circuit board having a thick fine pattern.
【図面の簡単な説明】 第1図は、印刷回路基板の断面図である。図中;1はめっ
き銅、2は銅箔、3は絶縁体、A0は絶縁体上にある銅箔
の幅、A1はA0上に形成されためっき銅の線幅、BはA0上
に形成されためっき銅の厚さ、AはA0上に形成されため
っき銅のめっき面に対して平行方向ののびを示す。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a printed circuit board. In the figure; 1 is plated copper, 2 is copper foil, 3 is an insulator, A 0 is the width of the copper foil on the insulator, A 1 is the line width of the plated copper formed on A 0 , and B is A 0 on the formed thickness of the plated copper, a is shows the growth in the direction parallel to the plating surface of the plating copper formed on a 0.
Claims (1)
2+〕重量比6.0〜8.0、 C.アンモニア濃度〔NH3〕0.03〜0.20mol/、 D.2,5−ジメルカプト−1,3,4−チアジアゾールまたはそ
の塩5.0×10-7〜6.5×10-6mol/、 からなる異方性めっき用ピロリン酸銅水溶液1. A. Copper ion concentration [Cu 2+ ] 22 to 42 g /, B. Pyrophosphate ion concentration [P 2 O 7 4 ] / copper ion concentration [Cu
2+] weight ratio 6.0 to 8.0, C. ammonia concentration [NH 3] 0.03~0.20mol /, D.2,5--dimercapto-1,3,4-thiadiazole or its salt 5.0 × 10 -7 ~6.5 × 10 -6 mol /, copper pyrophosphate aqueous solution for anisotropic plating
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132983A JPH0674514B2 (en) | 1984-06-29 | 1984-06-29 | Copper pyrophosphate aqueous solution for anisotropic plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59132983A JPH0674514B2 (en) | 1984-06-29 | 1984-06-29 | Copper pyrophosphate aqueous solution for anisotropic plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6112889A JPS6112889A (en) | 1986-01-21 |
| JPH0674514B2 true JPH0674514B2 (en) | 1994-09-21 |
Family
ID=15094040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59132983A Expired - Lifetime JPH0674514B2 (en) | 1984-06-29 | 1984-06-29 | Copper pyrophosphate aqueous solution for anisotropic plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0674514B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119433635B (en) * | 2024-10-24 | 2026-01-02 | 广东风华高新科技股份有限公司 | A maintenance method for pyrophosphate copper plating solution |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737898A (en) * | 1980-08-20 | 1982-03-02 | Asahi Chemical Ind | Thick film fine pattern |
| JPS5791590A (en) * | 1980-11-28 | 1982-06-07 | Asahi Chemical Ind | Method of producing thick film fine pattern conductor |
-
1984
- 1984-06-29 JP JP59132983A patent/JPH0674514B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6112889A (en) | 1986-01-21 |
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