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JPH0674717A - Resist film thickness measuring method - Google Patents
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JPH0674717A - Resist film thickness measuring method - Google Patents

Resist film thickness measuring method

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Publication number
JPH0674717A
JPH0674717A JP23116992A JP23116992A JPH0674717A JP H0674717 A JPH0674717 A JP H0674717A JP 23116992 A JP23116992 A JP 23116992A JP 23116992 A JP23116992 A JP 23116992A JP H0674717 A JPH0674717 A JP H0674717A
Authority
JP
Japan
Prior art keywords
resist
film thickness
coating
measured
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23116992A
Other languages
Japanese (ja)
Inventor
Hajime Miyashita
元 宮下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP23116992A priority Critical patent/JPH0674717A/en
Publication of JPH0674717A publication Critical patent/JPH0674717A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 基板面に塗布したレジストの膜厚の測定を短
時間に行い塗布装置の調整を行う。 【構成】 基板面に塗布したレジストの膜厚をレジスト
の塗布直後に、レジストの乾燥を待たずにレジストに含
まれているレジストの溶剤量を非接触的に測定し、測定
値と一定の関係にあるレジストの乾燥状態での膜厚を求
めて、得られた膜厚のデータに基づいて、レジストの塗
布工程でのレジストの塗布量の調整を行う。 【効果】 リアルタイムでのレジストの膜厚の測定、お
よび塗布膜厚の調整が可能。
(57) [Summary] [Purpose] The film thickness of the resist coated on the substrate surface is measured in a short time and the coating equipment is adjusted. [Structure] The film thickness of the resist applied to the substrate surface is measured immediately after the resist is applied, without waiting for the resist to dry, and the solvent amount of the resist contained in the resist is measured in a non-contact manner, and the measured value has a constant relationship. The film thickness of the resist in the dry state is calculated, and the resist coating amount in the resist coating step is adjusted based on the obtained film thickness data. [Effect] It is possible to measure the resist film thickness in real time and adjust the coating film thickness.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、シャドウマスク、リー
ドフレーム等を金属薄板のエッチングによって製造する
際に、所定のパターンを形成するレジストの膜厚を迅速
に測定する方法に関し、レジストの塗布直後の膜厚を測
定する方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for rapidly measuring the film thickness of a resist forming a predetermined pattern when a shadow mask, a lead frame or the like is manufactured by etching a thin metal plate. The present invention relates to a method for measuring the film thickness of.

【0002】[0002]

【従来の技術】シャドウマスク、リードフレーム等のエ
ッチング加工は、軟鋼、鉄ニッケル合金等の金属の薄板
の表面にレジストを塗布し、乾燥の後に所定のパターン
を有するマスクによって露光してレジストにパターンを
形成している。シャドウマスク、リードフレームの製造
は、長尺の金属の薄板の少なくとも一方の面に連続的に
レジストを塗布した後に、乾燥、露光、現像、エッチン
グの各工程を行っている。
2. Description of the Related Art For etching a shadow mask, lead frame, etc., a resist is applied to the surface of a thin metal plate such as mild steel or iron-nickel alloy, dried, and then exposed by a mask having a predetermined pattern to form a pattern on the resist. Is formed. In the production of shadow masks and lead frames, after continuously applying a resist to at least one surface of a long metal thin plate, each step of drying, exposing, developing and etching is performed.

【0003】基板へ塗布するレジストの厚みを一定にす
ることがエッチング特性、ひいては得られるシャドウマ
スクやリードフレームの品質に大きな影響を及ぼすので
レジストの膜厚を一定に保持することが求められてい
る。そこで、レジストの膜厚を正確に測定し、得られた
レジスト膜厚の測定データをレジストの塗布工程へとフ
ィードバックして塗布厚みを所定の値に保持することが
行われている。
Since making the thickness of the resist applied to the substrate constant has a great influence on the etching characteristics, and eventually the quality of the shadow mask and lead frame obtained, it is required to keep the resist film thickness constant. . Therefore, the film thickness of the resist is accurately measured, and the obtained measurement data of the resist film thickness is fed back to the resist coating process to maintain the coating thickness at a predetermined value.

【0004】図3は、従来のレジスト膜厚の測定方法の
1例を説明する図である。金属薄板21に塗布装置22
によってレジスト23を塗布した後に、乾燥工程24に
おいて、乾燥気流および赤外線加熱装置25によってレ
ジストを乾燥し、乾燥したレジストの膜厚を光学干渉式
の膜厚測定装置26等によって測定し、得られた測定デ
ータを塗布装置22へフィードバックして、塗布量を所
定の値に保持することが行われている。ところが、乾燥
工程の後のレジストの膜厚の測定は時間を要し、またシ
ャドウマスクやリードフレームの製造工程では、長尺の
金属の薄板に連続的にレジストを塗布しているので、レ
ジストの塗布工程へ膜厚のデータが送られたときには既
に次の部分へのレジストの塗布が行われているので、時
間的な遅れが生じ、リアルタイムで精度良くレジストの
厚みを所定の値に保持することはできなかった。
FIG. 3 is a diagram for explaining an example of a conventional method for measuring the resist film thickness. Coating device 22 for thin metal plate 21
After applying the resist 23 by the method, in a drying step 24, the resist was dried by a dry air flow and an infrared heating device 25, and the film thickness of the dried resist was measured by an optical interference type film thickness measuring device 26 or the like. The measurement data is fed back to the coating device 22 to maintain the coating amount at a predetermined value. However, it takes time to measure the film thickness of the resist after the drying step, and in the manufacturing process of the shadow mask and the lead frame, the resist is continuously applied to a long thin metal plate, so When the data of the film thickness is sent to the coating process, the resist coating has already been applied to the next part, so there is a time delay and it is necessary to maintain the resist thickness at a predetermined value accurately in real time. I couldn't.

【0005】[0005]

【発明が解決しようとする課題】乾燥後のレジストの膜
厚の測定は、塗布から測定までの時間を要し、測定した
データに基づいて正確にレジストの厚みを管理しようと
すると、次のレジストの測定は乾燥が終了するまで待つ
必要が生じ、一方、連続的にレジストの塗布と乾燥とを
行う場合には、レジストの塗布工程へ膜厚のデータが送
られたときには既に次の部分へのレジストの塗布が行わ
れているので、時間的な遅れが生じ、リアルタイムでの
膜厚の管理は困難であった。本発明は、レジスト膜厚の
測定を迅速に行い、塗布工程へリアルタイムで膜厚の測
定データをフィードバックし、効率的な製造を可能とす
ることを目的とするものである。
The measurement of the film thickness of the resist after drying requires a time from coating to measurement, and if the resist thickness is accurately controlled based on the measured data, the next resist It is necessary to wait until the drying is completed for the measurement of 1. On the other hand, in the case where the resist coating and the drying are continuously performed, when the data of the film thickness is sent to the resist coating step, the measurement of the next portion is already performed. Since the resist is applied, a time delay occurs and it is difficult to control the film thickness in real time. An object of the present invention is to quickly measure the resist film thickness and feed back the film thickness measurement data to the coating process in real time to enable efficient manufacturing.

【0006】[0006]

【課題を解決するための手段】本発明は、基板面に塗布
したレジストの膜厚測定方法において、レジストの塗布
直後に、レジストに含まれているレジストの溶剤量を測
定し、得られた溶剤の測定値からレジストの膜厚を測定
する方法である。レジストが、水または温水によって現
像が可能な、重クロム酸アンモニウム等の物質を加えた
カゼイン、ゼラチン等の水溶性のレジストである場合に
は、水分計によってレジスト中の水分量を測定し、得ら
れた測定データに基づいてレジストの膜厚を測定するこ
とができる。
The present invention provides a method for measuring the film thickness of a resist applied on a substrate surface, in which the amount of the solvent of the resist contained in the resist is measured immediately after the application of the resist, and the obtained solvent is obtained. Is a method of measuring the film thickness of the resist from the measured value of. When the resist is a water-soluble resist that can be developed with water or warm water, such as casein with added substances such as ammonium dichromate, gelatin, etc., measure the water content in the resist with a moisture meter and obtain The film thickness of the resist can be measured based on the obtained measurement data.

【0007】また、本発明の測定方法によれば、レジス
トの塗布直後に乾燥を待たずにレジストの膜厚を知るこ
とができるので、レジストの塗布から膜厚測定までの時
間を短縮し、膜厚の測定データをレジストの塗布工程に
直ちにフィードバックすることが可能となるので、乾燥
を待ってレジストの膜厚を測定した後に次の測定を行っ
たり、あるいは連続的に塗布をする場合には、膜厚の測
定データを直ちに塗布工程に反映することができる。と
くに、水溶性レジストは、水を主たる溶剤としており、
揮発性の有機溶剤を用いたレジストに比して乾燥に時間
を要するので、乾燥の必要がない本発明の方法は、水溶
性レジストを使用した場合に効果が大きい。
Further, according to the measuring method of the present invention, since the film thickness of the resist can be known immediately after coating the resist without waiting for the drying, the time from the coating of the resist to the film thickness measurement can be shortened. Since it becomes possible to immediately feed back the measurement data of the thickness to the resist coating process, after waiting for drying to measure the resist film thickness and then performing the next measurement, or when continuously coating, The measurement data of the film thickness can be immediately reflected in the coating process. In particular, water-soluble resists use water as the main solvent,
Since it takes longer time to dry than a resist using a volatile organic solvent, the method of the present invention which does not require drying is highly effective when a water-soluble resist is used.

【0008】レジスト中の溶媒の量を非接触的に測定す
る方法には、各種の方法を使用することができる。溶剤
に吸収波長を有する電磁波と溶剤に吸収波長を有しない
電磁波を照射し、両者の波長の反射強度の相違から溶剤
量をもとめて膜厚を知ることができる。図1に本発明の
膜厚測定方法の一例を図面を参照して説明する。レジス
ト1を塗布した基板2にレジストの乾燥前に、レジスト
には吸収されずにレジストの溶剤のみに吸収される吸収
波長の光を発光素子3から照射して、反射光を受光素子
4によって検出したA信号5と、その近傍のレジストの
溶剤に吸収されない波長の光を照射して受光素子によっ
て検出したB信号6を、膜厚演算装置7に供給しA信号
とB信号の比率から未乾燥状態での膜厚を求める。
Various methods can be used as a method for non-contactly measuring the amount of the solvent in the resist. By irradiating the solvent with an electromagnetic wave having an absorption wavelength and the solvent with an electromagnetic wave having no absorption wavelength, the film thickness can be known by obtaining the amount of the solvent from the difference in the reflection intensity of both wavelengths. An example of the film thickness measuring method of the present invention will be described with reference to the drawings in FIG. Before the resist is dried on the substrate 2 coated with the resist 1, light having an absorption wavelength that is not absorbed by the resist but is absorbed only by the solvent of the resist is emitted from the light emitting element 3, and reflected light is detected by the light receiving element 4. The A signal 5 and the B signal 6 detected by the light receiving element by irradiating light having a wavelength which is not absorbed by the solvent of the resist in the vicinity thereof are supplied to the film thickness calculation device 7 and undried from the ratio of the A signal and the B signal. Obtain the film thickness in the state.

【0009】一方、未乾燥状態での膜厚とレジストを乾
燥させた後の膜厚の関係は、レジストを乾燥させた後
に、レジストの膜厚を測定することによって両者の膜厚
の関係を知ることができるが、未乾燥状態と乾燥状態の
レジストの膜厚の関係はレジストの特性に応じて異なる
ので、対象となるレジスト毎に両者を測定して検量線等
を作製するとよい。さらに、乾燥状態での膜厚は、未乾
燥状態と乾燥状態の厚みの関係を記憶したメモリーを有
するマイクロコンピュータ等を使用した乾燥膜厚演算装
置8において、自動的に求めて、塗布装置9の塗布量調
整機構を調整することによって、膜厚の調整を直ちに行
うことができる。
On the other hand, the relationship between the film thickness in the undried state and the film thickness after drying the resist is known by measuring the film thickness of the resist after drying the resist. However, since the relationship between the film thickness of the resist in the undried state and the film thickness of the resist in the dried state differs depending on the characteristics of the resist, it is advisable to measure both for each target resist to prepare a calibration curve or the like. Furthermore, the film thickness in the dry state is automatically obtained by the dry film thickness calculating device 8 using a microcomputer or the like having a memory storing the relationship between the thickness in the non-dry state and the thickness in the dry state, and the film thickness in the coating device 9 is calculated. By adjusting the coating amount adjusting mechanism, the film thickness can be adjusted immediately.

【0010】[0010]

【作用】レジストの膜厚を、塗布直後の未乾燥の状態の
レジスト中の溶剤量を非接触的に測定することによって
求めたので、乾燥を待たずにレジストの膜厚を知ること
ができ、レジストの塗布工程との時間的な遅れを生ずる
ことなくレジストの塗布量を調整することができるの
で、連続的に一様な厚さのレジストを形成することが可
能となる。
Since the film thickness of the resist is obtained by non-contactly measuring the amount of the solvent in the undried resist immediately after coating, it is possible to know the film thickness of the resist without waiting for the drying. Since the resist coating amount can be adjusted without causing a time delay with the resist coating process, it is possible to continuously form a resist having a uniform thickness.

【0011】[0011]

【実施例】以下、本発明の実施例について説明する。 実施例1 カゼインレジストを幅650mmの帯状の金属基体に、
厚みを変化させて塗布し、塗布直後のレジストの膜厚を
図1に示すように発光素子と受光素子からなるセンサー
部を金属基体との間隔を一定に保持しながら幅方向に往
復運動させながらカゼインレジスト中の水分を測定し
た。水分量の測定は、水に吸収される波長の赤外線光に
よる測定強度と、その赤外線光に隣接する水に吸収され
ない赤外線光の測定強度の比率から水分量を求め、測定
値に基づいて未乾燥状態での厚みを演算し、続いて乾燥
状態のレジストの厚みを測定した。これらの結果から、
未乾燥状態でのレジストの厚みと乾燥状態でのレジスト
の厚みの関係を求めた。図2に、膜厚を水分計を使用し
て測定した場合の、水分計の示度を横軸に、縦軸には未
乾燥状態および乾燥状態での膜厚の関係を示す。
EXAMPLES Examples of the present invention will be described below. Example 1 A casein resist was applied to a strip-shaped metal substrate having a width of 650 mm,
As shown in FIG. 1, the thickness of the resist is changed, and the thickness of the resist immediately after the application is reciprocated in the width direction while maintaining a constant gap between the metal substrate and the sensor portion including the light emitting element and the light receiving element. The water content in the casein resist was measured. The water content is measured by calculating the water content from the ratio of the measured intensity of infrared light of a wavelength that is absorbed by water and the measured intensity of infrared light that is not absorbed by water adjacent to the infrared light, and undried based on the measured value. The thickness in the state was calculated, and then the thickness of the dry resist was measured. From these results,
The relationship between the resist thickness in the undried state and the resist thickness in the dried state was determined. In FIG. 2, when the film thickness is measured using a moisture meter, the horizontal axis shows the reading of the moisture meter and the vertical axis shows the relationship between the film thickness in the undried state and the film thickness in the dried state.

【0012】[0012]

【発明の効果】本発明のレジスト膜厚測定方法は、未乾
燥状態のレジスト中の溶剤の含有量を非接触的に測定
し、測定結果より乾燥時の膜厚を求めたので、乾燥を待
って膜厚計によって測定する方法では、5〜15分を要
した膜厚の測定が、事実上無視できる時間内に行え、膜
厚の測定結果に基づいて直ちにレジストの塗布装置の塗
布量を調整することができるので、所定の膜厚のレジス
トを塗布した基板を効率的に得ることが可能である。
EFFECT OF THE INVENTION The resist film thickness measuring method of the present invention measures the content of the solvent in the undried resist in a non-contact manner and determines the film thickness after drying from the measurement results. In the method of measuring with a film thickness meter, it takes 5 to 15 minutes to measure the film thickness within a time that can be ignored, and the coating amount of the resist coating device is immediately adjusted based on the measurement result of the film thickness. Therefore, it is possible to efficiently obtain a substrate coated with a resist having a predetermined film thickness.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の膜厚の測定方法を説明する図である。FIG. 1 is a diagram illustrating a film thickness measuring method of the present invention.

【図2】未乾燥時および乾燥時の膜厚の測定結果の一例
を説明する図である。
FIG. 2 is a diagram illustrating an example of measurement results of a film thickness before and after drying.

【図3】従来の膜厚の測定方法を説明する図である。FIG. 3 is a diagram illustrating a conventional film thickness measuring method.

【符号の説明】[Explanation of symbols]

1…レジスト、2…基板、3…発光素子、4…受光素
子、5…A信号、6…B信号、7…膜厚演算装置、8…
乾燥膜厚演算装置、9…塗布装置、21…金属薄板、2
2…塗布装置、23…レジスト、24…乾燥工程、25
…赤外線加熱装置、26…膜厚測定装置
1 ... Resist, 2 ... Substrate, 3 ... Light emitting element, 4 ... Light receiving element, 5 ... A signal, 6 ... B signal, 7 ... Film thickness calculation device, 8 ...
Dry film thickness calculation device, 9 ... Coating device, 21 ... Metal thin plate, 2
2 ... Coating device, 23 ... Resist, 24 ... Drying process, 25
... Infrared heating device, 26 ... Film thickness measuring device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板面に塗布したレジスト膜厚測定方法
において、未乾燥状態のレジスト中の溶剤の量を測定す
ることを特徴とするレジスト膜厚測定方法。
1. A method for measuring a resist film thickness applied to a substrate surface, which comprises measuring the amount of a solvent in a resist which is in an undried state.
【請求項2】 水溶性レジストの膜厚を、水分計によっ
て測定した水の量によって求めることを特徴とする請求
項1記載のレジスト膜厚測定方法。
2. The resist film thickness measuring method according to claim 1, wherein the film thickness of the water-soluble resist is determined by the amount of water measured by a moisture meter.
【請求項3】 未乾燥状態のレジストの膜厚から、乾燥
状態の膜厚をあらかじめ求めたレジストの未乾燥状態と
乾燥状態の膜厚の関係を参照して演算することを特徴と
する請求項1記載のレジスト膜厚測定方法。
3. The film thickness in a dry state is calculated from the film thickness of the resist in a non-dried state by referring to the relationship between the film thickness in the non-dried state and the film thickness in the dried state obtained in advance. 1. The resist film thickness measuring method described in 1.
JP23116992A 1992-08-31 1992-08-31 Resist film thickness measuring method Pending JPH0674717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23116992A JPH0674717A (en) 1992-08-31 1992-08-31 Resist film thickness measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23116992A JPH0674717A (en) 1992-08-31 1992-08-31 Resist film thickness measuring method

Publications (1)

Publication Number Publication Date
JPH0674717A true JPH0674717A (en) 1994-03-18

Family

ID=16919397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23116992A Pending JPH0674717A (en) 1992-08-31 1992-08-31 Resist film thickness measuring method

Country Status (1)

Country Link
JP (1) JPH0674717A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913781B2 (en) * 2001-06-19 2005-07-05 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and method including a device for applying a coating and a device for measuring the film quality of the coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913781B2 (en) * 2001-06-19 2005-07-05 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and method including a device for applying a coating and a device for measuring the film quality of the coating

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