JPH067591B2 - Method of implanting organic molecules on silicon solid surface - Google Patents
Method of implanting organic molecules on silicon solid surfaceInfo
- Publication number
- JPH067591B2 JPH067591B2 JP2078427A JP7842790A JPH067591B2 JP H067591 B2 JPH067591 B2 JP H067591B2 JP 2078427 A JP2078427 A JP 2078427A JP 7842790 A JP7842790 A JP 7842790A JP H067591 B2 JPH067591 B2 JP H067591B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon solid
- bond
- organic
- solid surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 44
- 229910052710 silicon Inorganic materials 0.000 title claims description 43
- 239000010703 silicon Substances 0.000 title claims description 40
- 239000007787 solid Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 20
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 2
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 238000003682 fluorination reaction Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 229910008284 Si—F Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 229910008051 Si-OH Inorganic materials 0.000 description 4
- 229910006358 Si—OH Inorganic materials 0.000 description 4
- 239000012025 fluorinating agent Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- GVWWSDPVTKKGJE-UHFFFAOYSA-N chloro(hydroxy)silane Chemical compound O[SiH2]Cl GVWWSDPVTKKGJE-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- ZMWKEMSODUCFOI-UHFFFAOYSA-N silicon;trichloro(octadecyl)silane Chemical compound [Si].CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl ZMWKEMSODUCFOI-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はシリコン固体表面への有機分子の植え付け方法
に関するものである。さらに詳しくは、この発明は半導
体製造工程等における有機電子素子形成に好適な、シリ
コン固体表面への有機分子の直接結合方法に関するもの
である。TECHNICAL FIELD The present invention relates to a method for implanting organic molecules on a silicon solid surface. More specifically, the present invention relates to a method for directly bonding an organic molecule to a silicon solid surface, which is suitable for forming an organic electronic device in a semiconductor manufacturing process or the like.
（従来技術とその課題） エレクトロニクスの発展にともなって、半導体製造工程
におけるシリコン固体表面への有機分子の直接的な植え
付けは、有機電子素子の形成のための重要な技術として
認識されている。(Prior Art and Its Problems) With the development of electronics, direct implantation of organic molecules on a silicon solid surface in a semiconductor manufacturing process has been recognized as an important technique for forming an organic electronic device.
このシリコン固体表面に有機分子を付着させる方法とし
ては、従来より、ラングミュアー・プロジェット法（Ｌ
Ｂ法）が一般的なものとして知られている。このＬＢ法
では、水面に展開した両親媒性有機化合物をシリコン固
体表面にすくい採るという方法でシリコン固体表面に有
機薄膜を形成している。As a method for attaching organic molecules to the surface of the silicon solid, the Langmuir-Projet method (L
Method B) is known as a general method. In this LB method, an organic thin film is formed on the silicon solid surface by scooping the amphiphilic organic compound spread on the water surface onto the silicon solid surface.
しかしながら、この方法によって作成された有機薄膜は
シリコン表面に分散力でのみ付着しているために、シリ
コン固体表面と有機分子との相互作用が非常に弱く、有
機電子素子形成に応用することは不適当である。さらに
また、機械的強度も非常に脆弱であるとの欠点を有して
いる。However, since the organic thin film formed by this method adheres to the silicon surface only by the dispersive force, the interaction between the silicon solid surface and the organic molecule is very weak and it cannot be applied to the formation of organic electronic devices. Appropriate. Furthermore, it has the drawback that the mechanical strength is also very weak.
ラングミュアー・プロジェット膜のこのような欠点を解
消するために、エネルギー線を照射して基板との結合を
選択形成し、これによってパターニングする方法がアイ
デアとしては提案されている（特開昭６２−２６２８６
８号公報）が、この単分子膜そのものへのエネルギー線
照射による作用効果は実際のところ明確でなく、化学結
合の生成について、その係合をより強くすることが、ど
のようにして可能になるのかは、単分子膜一般として全
く不明というほかにない。In order to solve such a defect of the Langmuir-Projet film, a method of irradiating an energy beam to selectively form a bond with a substrate and patterning the bond has been proposed as an idea (JP-A-62-62). -26286
No. 8), however, the effect of irradiation of the monomolecular film itself with energy rays is not clear in practice, and how it becomes possible to strengthen the engagement with respect to the formation of chemical bonds. Whether or not it is completely unknown as a monolayer in general.
結局、現状においては、シリコン固体表面への有機分子
の結合形成については実用的に有効な手段はいまだ提示
されていないのが実情である。After all, in the present situation, a practically effective means has not yet been proposed for the bond formation of the organic molecule on the silicon solid surface.
この発明は、以上の通りの事情を踏まえてなされたもの
であり、シリコン固体表面に有機分子を直接結合させる
ことができる、有機電子素子形成のための新しい方法を
提供することを目的としている。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a new method for forming an organic electronic device, in which organic molecules can be directly bonded to a silicon solid surface.
（課題を解決するための手段） この発明は、上記の課題を解決するために、シリコン固
体の清浄表面を弗素化処理し、最表面に存在する珪素原
子の外側に向いた結合手に弗素原子を結合させるか、も
しくはさらに表面に形成したＳｉ−Ｆ結合を加水分解に
よって置換してＳｉ−ＯＨの水酸基結合を反応サイトと
して利用し、またさらに弗素原子または水酸基を置換し
て有機化合物をシリコン固体表面に珪素との共有化学結
合を形成することを特徴とするシリコン固体表面への有
機分子の直接植え付け方法を提供する。(Means for Solving the Problems) In order to solve the above problems, the present invention treats a clean surface of a silicon solid with a fluorination treatment, and a fluorine atom is attached to a bond facing toward the outside of the silicon atom existing on the outermost surface. Or the Si-F bond formed on the surface is further hydrolyzed to utilize the hydroxyl bond of Si-OH as a reaction site, and the fluorine atom or the hydroxyl group is further substituted to replace the organic compound with a silicon solid. Provided is a method for directly implanting an organic molecule on a silicon solid surface, which is characterized by forming a covalent chemical bond with silicon on the surface.
第１図はこの発明の方法を模式的に示した工程図であ
る。以下、この図面に沿ってこの発明について詳しく説
明する。FIG. 1 is a process diagram schematically showing the method of the present invention. Hereinafter, the present invention will be described in detail with reference to the drawings.
同図に示したように、この発明の方法においては、まず
シリコン固体（シリコンウエハ）（１）の表面を弗素化
する（工程（ａ））。この弗素化は、シリコン固体表面
を超高真空中でイオンエッチングすることにより清浄化
した後に、気相弗素化処理を施すことにより行うことが
できる。この場合、気相弗素化処理としては、たとえ
ば、第２図に示したような、シリコンウエハ（１）とと
もにこれを載せる試料ホルダー（２）、ホルダー受け
（３）、ガス導入管（４）、イオンポンプ（６）、ター
ボモレキュラーポンプ（７）を有する弗素化用真空容器
中において、弗素化剤ガスを導入し、シリコンウエハ表
面を弗素化する。弗素化剤ガスとしては弗化キセノンガ
ス、弗素ガスや弗化水素ガス等がある。As shown in the figure, in the method of the present invention, first, the surface of the silicon solid (silicon wafer) (1) is fluorinated (step (a)). This fluorination can be performed by cleaning the surface of the silicon solid by ion etching in an ultrahigh vacuum and then performing a vapor phase fluorination treatment. In this case, as the vapor phase fluorination treatment, for example, as shown in FIG. 2, a sample holder (2) on which a silicon wafer (1) is placed, a holder holder (3), a gas introduction pipe (4), In a fluorination vacuum container having an ion pump (6) and a turbo molecular pump (7), a fluorinating agent gas is introduced to fluorinate the surface of the silicon wafer. Examples of the fluorinating agent gas include xenon fluoride gas, fluorine gas and hydrogen fluoride gas.
ただし、以上の処理ではシリコンウエハ表面のダイマー
ボンドは残存しているため、さらに以下に述べる水素化
処理を引き続き行うことが好ましい。すなわち、タング
ステンフィラメント（５）を１９００Ｋ以上に加熱する
とともに外部より水素ガスを導入し、原子状水素を発生
させることによって処理することができる。また、シリ
コン固体表面の弗素化は、その表面を弗素水素酸水溶液
処理することにより行うこともできる。この場合弗化水
素酸は0.3％以上が好ましい。また、処理方法として
は、浸漬、スプレー洗浄、流下洗浄等の適宜な方法を採
用することができる。また、このような弗化水素酸水溶
液処理に先立って、シリコン固体の表面に酸化性雰囲気
内で紫外線を照射し、その表面の有機汚染物を除去して
もよい。However, since the dimer bond on the surface of the silicon wafer remains in the above treatment, it is preferable to further carry out the hydrogenation treatment described below. That is, it can be treated by heating the tungsten filament (5) to 1900 K or higher and introducing hydrogen gas from the outside to generate atomic hydrogen. The fluorination of the silicon solid surface can also be performed by treating the surface with a hydrofluoric acid aqueous solution. In this case, the hydrofluoric acid content is preferably 0.3% or more. Further, as a treatment method, an appropriate method such as dipping, spray cleaning, and downflow cleaning can be adopted. Prior to such hydrofluoric acid solution treatment, the surface of the silicon solid may be irradiated with ultraviolet rays in an oxidizing atmosphere to remove organic contaminants on the surface.
そして、この発明の方法においては、必要に応じてこの
ようにシリコン固体の表面を弗素化した後に、第１図の
工程（ｂ）に示したように、加水分解処理を行いシリコ
ン固体表面のＳｉ−Ｆ結合をＳｉ−ＯＨ結合に変換す
る。このようにして、表面にＳｉ−Ｆ結合またはＳｉ−
ＯＨ結合を形成したシリコン固体を第１図工程（ｃ）に
示したように、有機分子で処理して弗素原子（Ｆ）また
は水酸基（ＯＨ）を置換し、有機分子をシリコン固体最
表面のシリコン原子と共有結合を形成させる。この場合
有機分子としては種々のものが使用できるが、たとえ
ば、Ｓｉ−Ｆ結合に対しては種々のアルコール分子や種
々のアミン分子が、またＳｉ−ＯＨ結合に対しては種々
のクロロシラノール分子、種々のエトキシシラン分子、
種々の有機酸分子や種々のアミン分子等が例示される
が、これらに限定されるものではない。Then, in the method of the present invention, after the surface of the silicon solid is fluorinated as needed, hydrolysis treatment is performed as shown in step (b) of FIG. Convert the -F bond to a Si-OH bond. In this way, Si-F bonds or Si-
As shown in step (c) of FIG. 1, a silicon solid having an OH bond is treated with an organic molecule to replace a fluorine atom (F) or a hydroxyl group (OH), and the organic molecule is replaced with silicon on the outermost surface of the silicon solid. Form a covalent bond with an atom. In this case, various organic molecules can be used. For example, various alcohol molecules and various amine molecules are used for the Si—F bond, and various chlorosilanol molecules are used for the Si—OH bond. Various ethoxysilane molecules,
Examples thereof include various organic acid molecules and various amine molecules, but are not limited thereto.
このようにして得られたシリコン固体表面では、有機分
子は反応点以外には化学的変化を起こすことがなく、ま
た酸化膜等の異物を間にはさむことなくシリコン固体最
表面の珪素原子に直接共有結合を形成する。このため、
この有機分子は基板であるところのシリコン固体と電気
的に密接な関係にある系を形成する。密着性も極めて高
いものとなっている。また、シリコン固体表面における
有機分子の密度は、当初形成するＳｉ−Ｆ結合の密度を
制御することにより簡便に制御できる。なお、Ｓｉ−Ｆ
結合の密度は気相弗素化の場合には弗素化剤ガスの圧力
または弗素化の時間等を調整することにより、また弗化
水素酸水溶液による場合には使用する弗化水素酸水溶液
の濃度を調整することにより制御することができる。On the surface of the silicon solid obtained in this way, the organic molecules do not chemically change except at the reaction points, and the silicon atoms on the outermost surface of the silicon solid are directly attached without interposing foreign matter such as an oxide film. Form a covalent bond. For this reason,
These organic molecules form a system that is in an electrically close relationship with the silicon solid that is the substrate. The adhesion is also extremely high. Further, the density of organic molecules on the surface of the silicon solid can be easily controlled by controlling the density of the Si-F bond initially formed. In addition, Si-F
The bond density is adjusted by adjusting the pressure of the fluorinating agent gas or the fluorination time in the case of vapor phase fluorination, and by adjusting the concentration of the hydrofluoric acid solution used when using the hydrofluoric acid solution. It can be controlled by adjusting.
以下に、この発明を実施例に基づいて具体的に説明す
る。The present invention will be specifically described below based on examples.
（実施例） （ｉ）表面に薄い酸化膜が存在するシリコンウエハに対
して、超高真空中で７５０℃以上に加熱することによっ
て、オージェ測定においても珪素以外に炭素や酸素が検
出されない清浄表面を作成した。(Example) (i) A silicon wafer having a thin oxide film on its surface is heated to 750 ° C. or higher in an ultra-high vacuum to detect carbon and oxygen other than silicon even in Auger measurement. It was created.
（ii）次に清浄表面を有するシリコンウエハを第２図に
示した弗素化用真空容器内に設置し、圧力５×１０-7〜
２×１０-6Torrにバリアブルリークバルブで調整した弗
化キセノンガスで４０分の表面弗素化を行った。次い
で、得られた弗素化表面をさらに同一真空容器中で水素
化処理を２０分間行った。この場合、タングステン製フ
ィラメントの温度は１９００Ｋ以上とし、また水素圧力
はバリアブルリークバルブにより５×１０-7〜２×１０
-6Torrになるように調整した。１×１ＲＨＥＥＤパター
ンによって表面のダイマーボンドの消失を確認した。(Ii) Next, a silicon wafer having a clean surface is placed in the fluorination vacuum container shown in FIG. 2, and the pressure is 5 × 10 −7 〜.
Surface fluorination was performed for 40 minutes with xenon fluoride gas adjusted with a variable leak valve to 2 × 10 −6 Torr. Next, the obtained fluorinated surface was further subjected to hydrogenation treatment for 20 minutes in the same vacuum vessel. In this case, the temperature of the tungsten filament is 1900 K or higher, and the hydrogen pressure is 5 × 10 −7 to 2 × 10 5 by a variable leak valve.
Adjusted to -6 Torr. The disappearance of the dimer bond on the surface was confirmed by the 1 × 1 RHEED pattern.
（iii）このようにして得られた表面弗素化シリコンウ
エハを空気中に取り出して、ＴＯＣ３０ppb以下の超純
水中に１０秒間浸漬した後に、絶乾窒素気流中で１５分
間乾燥した。このようにして表面のＳｉ−Ｆ結合を加水
分解して、Ｓｉ−ＯＨ結合を多数生成した。このシリコ
ンウエハをノルマルオクタデシルトリクロロシラン／ビ
シクロヘキシル／四塩化炭素／クロロホルム＝0.09ｇ／
１００ml／１５ml／１０mlの組成のシランカップリング
処理溶液に浸漬して３０分間処理した。この後、クロロ
ホルム中で十分に洗浄した。このようにして調整された
有機薄膜の膜厚をエリプソメトリーにより測定したとこ
ろ２５〜３０Ａであった。(Iii) The surface-fluorinated silicon wafer thus obtained was taken out into the air, immersed in ultrapure water having a TOC of 30 ppb or less for 10 seconds, and then dried in an absolutely dry nitrogen stream for 15 minutes. In this way, the Si-F bonds on the surface were hydrolyzed to generate a large number of Si-OH bonds. Normal silicon octadecyltrichlorosilane / bicyclohexyl / carbon tetrachloride / chloroform = 0.09g /
It was immersed in a silane coupling treatment solution having a composition of 100 ml / 15 ml / 10 ml for 30 minutes. After this, it was thoroughly washed in chloroform. The thickness of the thus-prepared organic thin film was measured by ellipsometry and found to be 25 to 30A.
（発明の効果） この発明によれば、シリコン固体表面に酸化膜などの異
物層を挟むことなく、直接共有結合によって最表面の珪
素原子に結合した有機分子層を形成することが可能とな
る。(Effect of the Invention) According to the present invention, it is possible to form an organic molecular layer bonded to the silicon atom on the outermost surface by direct covalent bonding without sandwiching a foreign material layer such as an oxide film on the silicon solid surface.
第１図は、この発明の模式的工程図である。 第２図は、シリコン固体表面を弗素化するために好適な
弗素化用真空容器の概略図である。 １…シリコンウエハ ２…試料ホルダー ３…ホルダー受け ４…弗素化剤ガス ５…タングステン製フィラメント ６…イオンポンプ ７…ターボモレキュラーポンプFIG. 1 is a schematic process drawing of the present invention. FIG. 2 is a schematic view of a fluorination vacuum container suitable for fluorinating a silicon solid surface. 1 ... Silicon wafer 2 ... Sample holder 3 ... Holder receiving 4 ... Fluorinating agent gas 5 ... Tungsten filament 6 ... Ion pump 7 ... Turbo molecular pump
Claims (1)
最表面に存在する珪素原子の外側に向いた結合手に弗素
原子を結合させるか、もしくはさらに加水分解によって
弗素原子を水酸基に置換し、次いで、弗素原子または水
酸基を置換して、有機分子を珪素原子に化学結合させる
ことを特長とするシリコン固体表面への有機分子の植え
付け方法。1. A clean surface of a silicon solid is fluorinated,
A fluorine atom is bonded to a bond facing the outside of the silicon atom existing on the outermost surface, or the fluorine atom is further substituted with a hydroxyl group by hydrolysis, and then the fluorine atom or the hydroxyl group is substituted, so that the organic molecule is converted into silicon. A method for implanting an organic molecule on a silicon solid surface, which is characterized by chemically bonding to an atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078427A JPH067591B2 (en) | 1990-03-27 | 1990-03-27 | Method of implanting organic molecules on silicon solid surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078427A JPH067591B2 (en) | 1990-03-27 | 1990-03-27 | Method of implanting organic molecules on silicon solid surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03278461A JPH03278461A (en) | 1991-12-10 |
| JPH067591B2 true JPH067591B2 (en) | 1994-01-26 |
Family
ID=13661746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2078427A Expired - Lifetime JPH067591B2 (en) | 1990-03-27 | 1990-03-27 | Method of implanting organic molecules on silicon solid surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH067591B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0817231B2 (en) * | 1992-01-29 | 1996-02-21 | 東京工業大学長 | Tissue-doped structure semiconductor device |
| JP4868496B2 (en) * | 2005-12-22 | 2012-02-01 | 国立大学法人 香川大学 | Solar cell and manufacturing method thereof |
| JP5087764B2 (en) * | 2005-12-22 | 2012-12-05 | 国立大学法人 香川大学 | Silicon fine particles, production method thereof, solar cell using the same, and production method thereof |
| WO2008155862A1 (en) * | 2007-06-20 | 2008-12-24 | Kazufumi Ogawa | Light sensor and method for manufacturing the same |
| US8592676B2 (en) | 2007-06-22 | 2013-11-26 | Empire Technology Development Llc | Solar cell and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62262868A (en) * | 1986-05-09 | 1987-11-14 | Matsushita Electric Ind Co Ltd | Formation of monomolecular built-up film pattern |
-
1990
- 1990-03-27 JP JP2078427A patent/JPH067591B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03278461A (en) | 1991-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hirai et al. | Mold surface treatment for imprint lithography | |
| JP2003502845A5 (en) | ||
| US20020127499A1 (en) | Mold, method for fabricating mold and pattern formation method | |
| JP3879312B2 (en) | Film forming method and device manufacturing method | |
| EP0351092B1 (en) | Method for the formation of monomolecular adsorption films or built-up films of monomolecular layers using silane compounds having an acetylene or diacetylene bond | |
| JPH067591B2 (en) | Method of implanting organic molecules on silicon solid surface | |
| Kaneko et al. | Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situ UVOC | |
| Sano et al. | Self-assembled monolayers directly attached to silicon substrates formed from 1-hexadecene by thermal, ultraviolet, and visible light activation methods | |
| JPH1126449A (en) | Method of forming insulating film | |
| JP3572056B2 (en) | Optical patterning of organic monolayer on silicon wafer | |
| JPH0233153A (en) | Manufacture of semiconductor device | |
| JP4325095B2 (en) | Manufacturing method of SiC element | |
| US20040069321A1 (en) | Method and a device for producing an adhesive surface on a substrate | |
| JPH02137313A (en) | Method for forming pattern on silicon solid surface | |
| JP4706047B2 (en) | Substrate suitable for device containing organic material, method for producing the same, and device containing organic material using the same | |
| Ponjeé et al. | The relation between lift‐off of photoresist and the surface coverage of trimethylsiloxy groups on silicon wafers: A quantitative time‐of‐flight secondary ion mass spectrometry and contact angle study | |
| Yasuda et al. | Controlled bond formation between chemical vapor deposition Si and ultrathin SiO 2 layers | |
| JPH033328A (en) | Modification of surface of solid sample | |
| TWI322465B (en) | ||
| JPH03204932A (en) | Removal of coating film on silicon layer and selective removal of silicon natural oxide film | |
| JP2694625B2 (en) | Method for etching compound semiconductor substrate and method for manufacturing the same | |
| JPH0684887A (en) | Method and device for formation of protection film of semiconductor wafer | |
| JP2737613B2 (en) | Method of forming fine pattern | |
| JPS63228620A (en) | Surface cleaning method | |
| WO1999014801A1 (en) | Method of washing semiconductor substrate and method of producing semiconductor devices using the same method |