JPH0676662B2 - Silicon nitride film-coated metal substrate and method for manufacturing the same - Google Patents
Silicon nitride film-coated metal substrate and method for manufacturing the sameInfo
- Publication number
- JPH0676662B2 JPH0676662B2 JP22371489A JP22371489A JPH0676662B2 JP H0676662 B2 JPH0676662 B2 JP H0676662B2 JP 22371489 A JP22371489 A JP 22371489A JP 22371489 A JP22371489 A JP 22371489A JP H0676662 B2 JPH0676662 B2 JP H0676662B2
- Authority
- JP
- Japan
- Prior art keywords
- metal substrate
- film
- silicon nitride
- layer
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 title claims description 48
- 239000002184 metal Substances 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 40
- 239000002131 composite material Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 12
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、耐熱性，高温での耐食性，耐摩耗性等の機能
を有した窒化ケイ素膜被覆金属基板及びその製造方法に
関する。Description: TECHNICAL FIELD The present invention relates to a silicon nitride film-coated metal substrate having functions such as heat resistance, corrosion resistance at high temperatures, and wear resistance, and a method for manufacturing the same.
［従来の技術と課題］ 周知の如く、低比重，低熱膨張係数及び高硬度を有し、
切削工具用材料として利用されている窒化ケイ素（Si3N
4）は、一方では高温での化学的安定性を利用して自動
車エンジン材料、ガスタービン材料等に利用されてい
る。しかし、これらはいずれもSi3N4の焼結体がほとん
どであり、各種基材表面にこのセラミックの被覆を施す
ことができれば、この基材の耐熱性、高温での耐食性、
対摩耗性等の機能を格段に向上させる事ができるであろ
うとの期待が寄せられていた。[Prior Art and Problems] As is well known, it has a low specific gravity, a low coefficient of thermal expansion, and a high hardness,
Silicon nitride (Si 3 N used as a material for cutting tools)
On the other hand, 4 ) is used for automobile engine materials, gas turbine materials, etc. by utilizing its chemical stability at high temperatures. However, most of these are sintered bodies of Si 3 N 4 , and if the surface of various base materials can be coated with this ceramic, heat resistance of this base material, corrosion resistance at high temperature,
It was expected that the functions such as abrasion resistance could be significantly improved.
しかし、熱CVD法による基材表面へのSi3N4の被覆はほと
んどが炭素基材に対してのものであり、Fe,Ni,Co基合金
といった金属基材への被覆例はほとんどとない。However, most of the coating of Si 3 N 4 on the surface of the substrate by the thermal CVD method is for the carbon substrate, and there are few examples of coating on the metallic substrate such as Fe, Ni, Co-based alloy. .
ところで、プラズマCVDやスパッタリングといった低温
でSi3N4膜を被覆できる方法によって金属基板にSi3N4膜
を被覆した例はある。しかし、耐熱材料として使用する
際に高温にさらすことによって基板金属の成分元素とSi
元素との相互拡散による金属シリサイドの生成が起こる
為、耐熱材料のような高温で使用する用途には利用でき
ない。By the way, there is an example in which a metal substrate is coated with a Si 3 N 4 film by a method capable of coating the Si 3 N 4 film at a low temperature such as plasma CVD or sputtering. However, when it is used as a heat-resistant material, it is not
Since metal silicide is generated by mutual diffusion with elements, it cannot be used for high temperature applications such as heat resistant materials.
また、基材表面の形状にかかわりなく均一にコーティン
グを行なうことができ、成膜速度が速く、厚く被覆でき
るため、熱CVD法がプラズマCVDやスパッタリングといっ
た他の方法で成膜するよりも有利であり、熱CVD法で金
属材料にSi3N4を被覆することが熱望されていた。In addition, since the coating can be performed uniformly regardless of the shape of the substrate surface, the film formation speed is fast, and the film can be thickly coated, the thermal CVD method is more advantageous than other methods such as plasma CVD or sputtering. Therefore, it has been eagerly desired to coat the metal material with Si 3 N 4 by the thermal CVD method.
しかしながら、熱CVD法による金属材料へのSi3N4セラミ
ック被覆においては、次のような問題点があった。However, the coating of Si 3 N 4 ceramics on the metal material by the thermal CVD method has the following problems.
熱CVD法によってSi3N4膜を被覆できる温度は、一般に
1000℃以上という高温である。従って、基板成分のFe,N
i,Co,Cr等と被膜成分のSiとの相互拡散により低融点で
かつポーラスな金属シリサイドを形成してしまい、均一
にSi3N4の被膜をすることはできない。The temperature at which the Si 3 N 4 film can be coated by the thermal CVD method is generally
It is a high temperature of over 1000 ℃. Therefore, Fe, N
Due to mutual diffusion of i, Co, Cr, etc. and Si of the film component, a porous metal silicide having a low melting point is formed, and it is impossible to form a uniform Si 3 N 4 film.
上記金属シリサイドの形成を防ぐためにセラミックを
中間層として挿入する方法が考えられる。しかし、一般
に窒化物や炭化物といったセラミックはSi3N4とは高温
においても熱力学的に安定で反応層を形成しないため、
金属基板の材料とSi3N4との間に他のセラミックを中間
層として挿入しても中間層とSi3N4との間においては密
着性が悪い。A method of inserting ceramics as an intermediate layer in order to prevent the formation of the above metal silicide can be considered. However, in general, ceramics such as nitrides and carbides are thermodynamically stable with Si 3 N 4 even at high temperatures and do not form a reaction layer.
Even if another ceramic is inserted as an intermediate layer between the metal substrate material and Si 3 N 4 , the adhesion between the intermediate layer and Si 3 N 4 is poor.
本発明は上記事情に鑑みてなされたもので、窒化ケイ素
膜を金属基板上に密着性良く形成しえる窒化ケイ素膜被
覆金属基板及びその製造方法を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a silicon nitride film-coated metal substrate capable of forming a silicon nitride film on a metal substrate with good adhesion, and a method for manufacturing the same.
［課題を解決するための手段と作用］ 本願の第１の発明は、金属基板と、この金属基板上に形
成された窒化チタン層と、この窒化チタン層上に形成さ
れた窒化ケイ素膜と、前記窒化チタン層と窒化ケイ素膜
の界面付近に形成され，窒化チタン層中の窒化チタンが
前記窒化ケイ素膜中に針状に延びた複合層とを具備する
ことを特徴とする窒化ケイ素膜被覆金属基板である。[Means and Actions for Solving the Problems] A first invention of the present application is to provide a metal substrate, a titanium nitride layer formed on the metal substrate, and a silicon nitride film formed on the titanium nitride layer. A metal coated with a silicon nitride film, comprising a composite layer formed near the interface between the titanium nitride layer and the silicon nitride film, wherein the titanium nitride in the titanium nitride layer extends into the silicon nitride film in a needle shape. The substrate.
本願第２の発明は、金属基板上に中間層としての窒化チ
タン層を介して窒化ケイ素膜を形成する窒化ケイ素膜被
覆金属基板の製造方法において、前記窒化チタン層を金
属基板上に形成する工程から窒化ケイ素膜を前記窒化チ
タン層上に形成する工程までを、同一装置内で連続して
化学気相蒸着法により行う事を特徴とする窒化ケイ素膜
被覆金属基板の製造方法である。A second invention of the present application is a method for producing a silicon nitride film-covered metal substrate in which a silicon nitride film is formed on a metal substrate via a titanium nitride layer as an intermediate layer, wherein the titanium nitride layer is formed on the metal substrate. The method for producing a silicon nitride film-covered metal substrate is characterized in that the steps from to the step of forming a silicon nitride film on the titanium nitride layer are continuously performed by a chemical vapor deposition method in the same apparatus.
本発明において、金属基板の材料としては例えばFe,Ni,
Co基合金等が挙げられる。In the present invention, as the material of the metal substrate, for example, Fe, Ni,
Examples include Co-based alloys.
本発明において、窒化チタン（TiN）層は金属基板とSi3
N4膜との間の熱膨脹の影響を緩和する効果を有する。こ
こで、TiN層の膜厚は、針状に延びてSi3N4と混合層を形
成している部分を除き、10μｍ以上が望ましい。この理
由は、10μｍ未満では金属基板とSi3N4との熱膨脹差を
緩和できないこと、及び金属基板の金属元素とSiの相互
拡散のバリアにはならないことによる。なお、上記TiN
層の一部は金属基板の一部と反応して反応層を形成する
が、この反応よりも十分に厚いTiN層が存在することに
より金属基板の金属元素とSiの相互拡散を抑える事がで
きる。In the present invention, the titanium nitride (TiN) layer is formed on the metal substrate and Si 3
It has the effect of mitigating the effect of thermal expansion with the N 4 film. Here, the film thickness of the TiN layer is preferably 10 μm or more except for the portion extending in a needle shape and forming a mixed layer with Si 3 N 4 . The reason for this is that if the thickness is less than 10 μm, the difference in thermal expansion between the metal substrate and Si 3 N 4 cannot be relaxed, and it does not serve as a barrier for mutual diffusion between the metal element of the metal substrate and Si. The above TiN
Part of the layer reacts with part of the metal substrate to form a reaction layer, but the presence of a TiN layer that is sufficiently thicker than this reaction can suppress the mutual diffusion of metal elements and Si of the metal substrate. .
本発明において、TiNとSi3N4とは高温においても安定で
反応しない。しかし、本発明方法のように同一装置
（炉）内で連続的に２種類の膜を成膜することにより、
両者の間に酸化物等の密着性を損ねるものが形成され
ず、むしろ炉内に残存していたTi原子とN2原子及びSi3N
4成膜用として後から導入されたNH3分子との間で反応を
起す。その結果、Ti原子の濃度が低いためつまり原料ガ
スの過飽和度が低いため、TiN層は金属基板全体に生成
されない。むしろ、TiN層の一部が針状となってSi3N4膜
中へ延びる事によってアンカー効果を有する複合層が形
成される。従って、Si3N4膜を金属基板へ密着性良く被
覆することができる。ところで、針状のTiNの長さにつ
いては特に規定されなく、生成した針状のTiNがSi3N4膜
中に入り込んでいれば十分な密着力が得られる。TiNの
長さに規定がないのは、TiNの成膜終了後強制的に炉内
の残存ガスを排気することなく、Si3N成膜用の原料ガス
を導入するので、炉内に残存しているTi原子の量に左右
されるためである。In the present invention, TiN and Si 3 N 4 are stable and do not react even at high temperatures. However, by continuously forming two types of films in the same apparatus (furnace) as in the method of the present invention,
There is no formation of oxides or other substances that impair the adhesion between the two, rather the Ti and N 2 atoms and Si 3 N remaining in the furnace
4 Reacts with NH 3 molecules introduced later for film formation. As a result, since the concentration of Ti atoms is low, that is, the supersaturation degree of the source gas is low, the TiN layer is not formed on the entire metal substrate. Rather, a part of the TiN layer becomes acicular and extends into the Si 3 N 4 film to form a composite layer having an anchor effect. Therefore, the Si 3 N 4 film can be coated on the metal substrate with good adhesion. By the way, the length of the needle-shaped TiN is not particularly specified, and if the generated needle-shaped TiN penetrates into the Si 3 N 4 film, sufficient adhesion can be obtained. The fact that the length of TiN is not specified is because the raw material gas for Si 3 N film formation is introduced without forcibly exhausting the residual gas in the furnace after the TiN film formation is completed. This is because it depends on the amount of Ti atoms present.
本発明方法においては、TiN層（中間層），Si3N4膜をと
もに熱CVD法により作製する為、成膜速度が速く、複雑
形状の金属基板にも適用でき、厚膜化が可能である。従
って、従来の耐熱金属材料では不十分であったより厳し
い環境で使用する耐熱材料，高温耐食材料，耐摩耗材料
への適用が可能である。In the method of the present invention, the TiN layer (intermediate layer) and the Si 3 N 4 film are both formed by the thermal CVD method, so that the film formation rate is fast, and it can be applied to a metal substrate having a complicated shape and can be made thicker. is there. Therefore, it can be applied to heat resistant materials, high temperature corrosion resistant materials, and wear resistant materials used in more severe environments where conventional heat resistant metal materials are insufficient.
本発明において、金属基板の材料となるFe,Ni,Co基合金
等の熱膨張係数と基板上のTiN層，Si3N4膜との熱膨張係
数との関係は次のようになっている。In the present invention, the relationship between the coefficient of thermal expansion of Fe, Ni, Co-based alloy or the like, which is the material of the metal substrate, and the coefficient of thermal expansion of the TiN layer and Si 3 N 4 film on the substrate is as follows. .
Fe,Ni,Co基合金＞TiN＞Si3N4従って、金属基板の上に直
接Si3N4膜を析出したものに比べてTiNが金属基板とSi3N
4との熱膨脹の差を緩和する役割を果たし、膜内に発生
する内部応力を小さくして被膜の密着性を向上させる事
ができる。Fe, Ni, Co-based alloy>TiN> Si 3 N 4 Therefore, TiN has a metal substrate and Si 3 N 4 compared to the case where a Si 3 N 4 film is directly deposited on the metal substrate.
It plays the role of alleviating the difference in thermal expansion from that of No. 4 and can reduce the internal stress generated in the film to improve the adhesion of the film.
［実施例］ 以下、本発明の実施例について説明する。[Examples] Examples of the present invention will be described below.
まず、熱CVD装置を使用し、ステンレス鋼（SUS304）か
らなる金属基板（試験片）を炉内にセットした。つづい
て、これを1100℃に加熱しながら、四塩化チタン，窒素
ガス及び水素ガスからなる混合ガスを全圧50Torrで２時
間送り込んで前記試験片にTiN層を被覆した。次に、窒
化チタン及び窒素ガスを止め、装置内の圧力は50Torr
に、温度を1100℃に保持したまま四塩化ケイ素，アンモ
ニアガス及び水素ガスからなる混合ガスを全圧50Torrで
２時間送り込んで前記TiN被覆試験片の表面に更にSi3N4
膜を被覆した。形成されたSi3N4膜は熱CVD終了後の冷却
中においても剥離することはなかった。First, using a thermal CVD apparatus, a metal substrate (test piece) made of stainless steel (SUS304) was set in a furnace. Subsequently, while heating this at 1100 ° C., a mixed gas consisting of titanium tetrachloride, nitrogen gas and hydrogen gas was fed at a total pressure of 50 Torr for 2 hours to coat the test piece with the TiN layer. Next, the titanium nitride and nitrogen gas were stopped, and the pressure inside the device was 50 Torr.
Then, while maintaining the temperature at 1100 ° C., a mixed gas of silicon tetrachloride, ammonia gas and hydrogen gas was fed at a total pressure of 50 Torr for 2 hours to further add Si 3 N 4 to the surface of the TiN coated test piece.
The membrane was coated. The formed Si 3 N 4 film was not peeled off during cooling after completion of thermal CVD.
なお、比較例として他の熱CVD装置にて厚さ20μｍのTiN
層を被覆したSUS304製の金属基板に、同様に1100℃,50T
orrで同じガス条件で熱CVD法によりSi3N4膜を被覆し
た。その結果、熱CVD終了後の冷却途中でSi3N4膜と中間
層との間で剥離が観察された。As a comparative example, a TiN film with a thickness of 20 μm was formed using another thermal CVD device.
On a metal substrate made of SUS304 coated with layers, similarly, at 1100 ℃, 50T
The Si 3 N 4 film was coated by the thermal CVD method under the same gas condition with orr. As a result, peeling was observed between the Si 3 N 4 film and the intermediate layer during cooling after completion of thermal CVD.
上記実施例のように形成されたSi3N4膜被覆金属基板に
ついてSEMにより断面のミクロ組織を観察したところ、
第１図に示すようになった。同図で、１は金属基板であ
り、２は膜厚約30μｍのTiN層３は前記基板１とTiN層２
の間に形成された膜厚約10μｍの反応層である。また、
４は膜厚約15μｍのSi3N4膜であり、５は針状に延びたT
iNとの複合層（膜厚約15μｍ）である。ところで、形成
された被膜についてＸ線回折を行ったところ、針状に延
びたTiN層は（111）面に強く配向しており、一方のSi3N
4膜は低温型のα−Si3N4であることが判明した。When the microstructure of the cross section was observed by SEM for the Si 3 N 4 film-coated metal substrate formed as in the above example,
It became as shown in FIG. In the figure, 1 is a metal substrate, 2 is a TiN layer 3 with a film thickness of about 30 μm, the substrate 1 and the TiN layer 2
Is a reaction layer having a thickness of about 10 μm formed between the two. Also,
4 is a Si 3 N 4 film with a film thickness of about 15 μm, and 5 is a needle-like extending T
It is a composite layer with iN (film thickness of about 15 μm). By the way, when X-ray diffraction was performed on the formed film, the TiN layer extending like a needle was strongly oriented in the (111) plane, and one of the Si 3 N
It was found that the four films were low temperature type α-Si 3 N 4 .
こうして得られたSi3N4膜被覆金属基板は優れた耐熱
性、高温での耐食性、耐摩耗性を備えていることが確認
され、また該Si3N4膜は繰り返しの加熱、冷却試験によ
っても剥離は生じなかった。The Si 3 N 4 film-coated metal substrate thus obtained was confirmed to have excellent heat resistance, corrosion resistance at high temperatures, and wear resistance, and the Si 3 N 4 film was subjected to repeated heating and cooling tests. No peeling occurred.
また、本発明方法によれば、TiN層の被覆工程の後、Si3
N4膜の被覆工程を同一炉内で連続して熱CVD法により行
なうため、成膜速度が速く、Si3N4膜を金属基板に安定
して被覆でき、厚膜化も可能である。従って、従来の耐
熱金属材料では不十分であったより厳しい環境で使用す
る耐熱材料，高温耐食材料，耐摩耗材料へ適用できる。Further, according to the method of the present invention, after the TiN layer coating step, Si 3
Since the coating process of the N 4 film is continuously performed in the same furnace by the thermal CVD method, the deposition rate is high, the Si 3 N 4 film can be stably coated on the metal substrate, and the film thickness can be increased. Therefore, it can be applied to heat resistant materials, high temperature corrosion resistant materials, and wear resistant materials used in more severe environments where conventional heat resistant metal materials are insufficient.
［発明の効果］ 以上詳述した如く本発明によれば、従来金属基板への被
覆が困難であったSi3N4膜を工業的に安定して被覆で
き、優れた耐熱性、高温での耐食性、耐摩耗性を備えた
Si3N4膜被覆金属基板及びその製造方法を提供できる。[Effects of the Invention] As described in detail above, according to the present invention, it is possible to industrially stably coat a Si 3 N 4 film that has been difficult to coat on a metal substrate, and to provide excellent heat resistance and high temperature. With corrosion resistance and wear resistance
It is possible to provide a Si 3 N 4 film-coated metal substrate and a method for manufacturing the same.
第１図は本発明の一実施例に係るSi3N4膜被覆金属基板
の断面の金属組織のSEM写真図である。 １……金属基板、２……TiN層、３……反応層、４……S
i3N4膜、５……複合層。FIG. 1 is a SEM photograph of a metal structure of a cross section of a Si 3 N 4 film-coated metal substrate according to an example of the present invention. 1 ... Metal substrate, 2 ... TiN layer, 3 ... reaction layer, 4 ... S
i 3 N 4 membrane, 5 ... Composite layer.
Claims (2)
窒化チタン層と、この窒化チタン層上に形成された窒化
ケイ素膜と、前記窒化チタン層と窒化ケイ素膜の界面付
近に形成され，窒化チタン層中の窒化チタンが前記窒化
ケイ素膜中に針状に延びた複合層とを具備することを特
徴とする窒化ケイ素膜被覆金属基板。1. A metal substrate, a titanium nitride layer formed on the metal substrate, a silicon nitride film formed on the titanium nitride layer, and a film formed near the interface between the titanium nitride layer and the silicon nitride film. A silicon nitride film-covered metal substrate, comprising a composite layer in which titanium nitride in the titanium nitride layer extends like needles in the silicon nitride film.
を介して窒化ケイ素膜を形成する窒化ケイ素膜被覆金属
基板の製造方法において、前記窒化チタン層を金属基板
上に形成する工程から窒化ケイ素膜を前記窒化チタン層
上に形成する工程までを、同一装置内で連続して化学気
相蒸着法により行う事を特徴とする窒化ケイ素膜被覆金
属基板の製造方法。2. A method for manufacturing a silicon nitride film-covered metal substrate, comprising forming a silicon nitride film on a metal substrate via a titanium nitride layer as an intermediate layer, wherein the step of forming the titanium nitride layer on the metal substrate is nitrided. A method for producing a metal substrate coated with a silicon nitride film, characterized in that the steps up to the step of forming a silicon film on the titanium nitride layer are continuously performed by a chemical vapor deposition method in the same apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22371489A JPH0676662B2 (en) | 1989-08-30 | 1989-08-30 | Silicon nitride film-coated metal substrate and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22371489A JPH0676662B2 (en) | 1989-08-30 | 1989-08-30 | Silicon nitride film-coated metal substrate and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0387370A JPH0387370A (en) | 1991-04-12 |
| JPH0676662B2 true JPH0676662B2 (en) | 1994-09-28 |
Family
ID=16802520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22371489A Expired - Lifetime JPH0676662B2 (en) | 1989-08-30 | 1989-08-30 | Silicon nitride film-coated metal substrate and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0676662B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5321360B2 (en) * | 2009-08-31 | 2013-10-23 | 三菱マテリアル株式会社 | Surface coated cutting tool |
| CN104213097A (en) * | 2014-09-16 | 2014-12-17 | 朱忠良 | Surface alloying process for aluminum alloy |
| WO2025192593A1 (en) * | 2024-03-13 | 2025-09-18 | 京セラ株式会社 | Ceramic structure |
-
1989
- 1989-08-30 JP JP22371489A patent/JPH0676662B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0387370A (en) | 1991-04-12 |
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