JPH0679368B2 - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH0679368B2 JPH0679368B2 JP59045999A JP4599984A JPH0679368B2 JP H0679368 B2 JPH0679368 B2 JP H0679368B2 JP 59045999 A JP59045999 A JP 59045999A JP 4599984 A JP4599984 A JP 4599984A JP H0679368 B2 JPH0679368 B2 JP H0679368B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- metal
- recording medium
- thin film
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 102
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 43
- 239000010408 film Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 18
- 229910020630 Co Ni Inorganic materials 0.000 claims description 9
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 25
- 239000007789 gas Substances 0.000 description 17
- 238000001228 spectrum Methods 0.000 description 17
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 15
- 238000000576 coating method Methods 0.000 description 13
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- 229910000428 cobalt oxide Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- -1 polyethylene terephthalate Polymers 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000314 lubricant Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 238000000864 Auger spectrum Methods 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229910020632 Co Mn Inorganic materials 0.000 description 1
- 229910020678 Co—Mn Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910020711 Co—Si Inorganic materials 0.000 description 1
- 229910020710 Co—Sm Inorganic materials 0.000 description 1
- 229910020516 Co—V Inorganic materials 0.000 description 1
- 229910020514 Co—Y Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910002549 Fe–Cu Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- 229910018657 Mn—Al Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- IUYLTEAJCNAMJK-UHFFFAOYSA-N cobalt(2+);oxygen(2-) Chemical compound [O-2].[Co+2] IUYLTEAJCNAMJK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- FPVKHBSQESCIEP-JQCXWYLXSA-N pentostatin Chemical compound C1[C@H](O)[C@@H](CO)O[C@H]1N1C(N=CNC[C@H]2O)=C2N=C1 FPVKHBSQESCIEP-JQCXWYLXSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 I 発明の背景 技術分野 本発明は薄膜型磁気記録媒体に関し、詳しくは耐摩耗
性、耐蝕性および電磁変換特性を改良した薄膜型磁気記
録媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic recording medium, and more particularly to a thin film magnetic recording medium having improved wear resistance, corrosion resistance and electromagnetic conversion characteristics.
従来技術とその問題点 磁性層の形成法から磁気記録媒体の製造方法を区分する
と、塗布法によるものと、飛翔またはメッキ法によるも
のに大別できる。Prior art and its problems When the method of manufacturing a magnetic recording medium is divided from the method of forming a magnetic layer, it can be roughly classified into a coating method and a flying or plating method.
塗布法によるもの(以下、この方法により得られた磁性
記録媒体を塗布型磁気記録媒体という。)は、γ−Fe2O
3、Fe等の強磁性粉末を適当なバインダー樹脂と混合、
分散して得られる磁性塗料を非磁性基板上に塗布し、磁
場配向、乾燥、スーパーカレンダー等の処理を行って磁
気記録媒体としての特性を得ている。The one obtained by the coating method (hereinafter, the magnetic recording medium obtained by this method is referred to as the coating type magnetic recording medium) is γ-Fe 2 O.
3 , mixing ferromagnetic powder such as Fe with a suitable binder resin,
The magnetic coating material obtained by dispersion is applied onto a non-magnetic substrate and subjected to magnetic field orientation, drying, super calendering, etc. to obtain characteristics as a magnetic recording medium.
この塗布型磁気記録媒体は高保磁力化、記録密度の向
上、磁性層の薄膜化等を指向している。しかし、強磁性
粉末をバインダーと混合して得られる磁性塗料を非磁性
基板上に塗布する方法では、本質的に強磁性粉末の実質
充填率に限界があり、高密度化、薄膜化を目指すには困
難な要因を有している。This coating type magnetic recording medium is aimed at increasing the coercive force, improving the recording density, and thinning the magnetic layer. However, in the method of coating the magnetic coating obtained by mixing the ferromagnetic powder with the binder on the non-magnetic substrate, there is essentially a limit to the substantial filling rate of the ferromagnetic powder, and it is aimed at achieving high density and thin film. Has difficult factors.
このような理由から、高密度化、薄膜化を図るために、
通常は、真空蒸着、スパッタリング、イオンプレーティ
ング等の方法により磁性材料を飛翔させて非磁性基板上
に磁性材料の連続した薄膜を形成する方法および電解あ
るいは化学メッキ法により形成する方法(以下、これら
の方法により得られた磁気記録媒体を薄膜型磁気記録媒
体という。)が採用されている。この薄膜型磁気記録媒
体では、高密度化、薄膜化等、前記塗布型磁気記録媒体
にない短波長領域での高記録密度特性を有した磁気記録
媒体が得られる。For this reason, in order to achieve high density and thin film,
Usually, a method of flying a magnetic material by a method such as vacuum deposition, sputtering, or ion plating to form a continuous thin film of a magnetic material on a non-magnetic substrate, and a method of forming by electrolysis or chemical plating (hereinafter, these The magnetic recording medium obtained by the above method is referred to as a thin film magnetic recording medium). With this thin film magnetic recording medium, it is possible to obtain a magnetic recording medium having high recording density characteristics in the short wavelength region which the coating type magnetic recording medium does not have such as high density and thin film.
しかし、薄膜型磁気記録媒体では一般に、耐蝕性、耐摩
耗性等の物理、化学的特性および電磁気的特性の改良が
必要とされている。However, thin-film magnetic recording media generally require improvements in physical and chemical characteristics such as corrosion resistance and abrasion resistance, and electromagnetic characteristics.
上記真空蒸着、スパッタリング、イオンプレーティング
等で作成される薄膜型磁気記録媒体の改良の一つとし
て、特開昭53−42010号、同53−64008号、同54−19199
号等公報に開示されている酸素雰囲気下で蒸着を行なう
方法により、蒸着磁性薄膜形成粒子の微細化を図ると共
に、保磁力を向上させ、高記録密度に適する磁気記録媒
体を得ることが行なわれている。As one of the improvements of the thin film type magnetic recording medium produced by the above-mentioned vacuum deposition, sputtering, ion plating, etc., there are disclosed in JP-A Nos. 53-42010, 53-64008, and 54-19199.
The method of performing vapor deposition in an oxygen atmosphere disclosed in Japanese Patent No. 3,629,771 aims to miniaturize vapor-deposited magnetic thin film forming particles, improve coercive force, and obtain a magnetic recording medium suitable for high recording density. ing.
また、薄膜型磁気記録媒体の膜厚の減少は、前記薄膜材
料そのものの化学的特性の欠点に加えて、薄膜の機械的
強度が低下することになり、耐蝕性、耐摩耗性の改良が
特に必要であり、そのための改良として、薄膜の上部に
保護層を設け、これにより耐蝕性、耐摩耗性を向上させ
る種々の方法が提案されている。例えば、1)耐摩耗性
金属のオーバーコート層が特開昭51−23704号、同51−4
7401号、同53−7205号、同53−39708号、同53−73108
号、同54−141107号等公報に、2)金属酸化物、窒化
物、炭化物のオーバーコート層が特開昭52−4805号、同
52−127204号、同57−138054号等公報に、3)無機物滑
剤のオーバーコート層が特開昭50−146302号、同53−57
002号公報に、4)有機物高分子被膜を形成したものが
特開昭52−153707号、同56−153534号、同57−8927号、
同58−130436号、同58−150128号等公報にそれぞれ開示
されている。また、5)高級脂肪酸、高級アルコールの
エステル類等の有機滑剤を塗布あるいは吸着させたもの
が特開昭55−93533号、同58−19736号等公報に開示さ
れ、さらに、6)磁性層表面の酸化あるいは窒化によ
り、酸化被膜、窒化被膜を形成したものが特開昭50−33
806号、同52−153407号、同54−143111号、同56−15011
号、同58−26321号等公報に開示されている。Further, the reduction of the film thickness of the thin film type magnetic recording medium results in a decrease in the mechanical strength of the thin film in addition to the defect of the chemical characteristics of the thin film material itself, and the improvement of the corrosion resistance and the wear resistance is particularly As a necessary improvement, various methods have been proposed for improving the corrosion resistance and the abrasion resistance by providing a protective layer on the upper portion of the thin film. For example, 1) wear-resistant metal overcoat layers are disclosed in JP-A-51-23704 and JP-A-51-4.
No. 7401, No. 53-7205, No. 53-39708, No. 53-73108
JP-A-52-4805, JP-A-52-4805, and JP-A-52-4805, which describe 2) metal oxide, nitride, and carbide overcoat layers.
No. 52-127204, No. 57-138054 and the like, 3) Overcoat layer of inorganic lubricant is disclosed in JP-A Nos. 50-146302 and 53-57.
No. 002, 002, 153707, No. 56-153534, No. 57-8927;
No. 58-130436, No. 58-150128, and the like. Further, 5) those coated or adsorbed with an organic lubricant such as esters of higher fatty acids and higher alcohols are disclosed in JP-A-55-93533 and JP-A-58-19736, and further, 6) the surface of the magnetic layer. An oxide film or a nitride film formed by the oxidation or nitridation of JP-A-50-33 is disclosed.
No. 806, No. 52-153407, No. 54-143111, No. 56-15011
No. 58-26321 and the like.
しかし、これら従来技術において、酸素導入を行ない薄
膜を形成する方法では、一般に膜の機械的強度を上げる
ために酸素と磁性金属との反応量を増加させるが、この
方法では、3000Å程度以下の膜厚では薄膜の薄膜自体が
もろくなるだけでなく、飽和磁化Msの著しい減少を伴い
磁気特性の点からも薄膜の劣化が避けられなかった。However, in these conventional techniques, in the method of forming a thin film by introducing oxygen, generally, the reaction amount of oxygen and a magnetic metal is increased in order to increase the mechanical strength of the film, but in this method, a film of 3000 Å or less is used. When the thickness is large, not only the thin film itself becomes brittle, but also the deterioration of the thin film is unavoidable in terms of magnetic characteristics due to a significant decrease in the saturation magnetization Ms.
また、保護層を設ける各従来技術において、1)、
2)、3)および4)では、被膜の厚さが約0.1μm以
上でないと耐蝕性、耐摩耗性の両方に良好な効果を得ら
れず、その厚さでは、スペーシングロスを生じ高密度記
録媒体としての充分な性能を得ることができない。ま
た、付加的に膜を形成しているため磁性層と被膜との間
の接着力が不充分で層間剥離を発生し易く特に耐摩耗性
に問題があった。さらに、5)では、滑剤被膜が剥離し
易くかつ消耗し易いためスチル耐久性等の特性が充分で
はなかった。また、6)では、熱または粒子の運動エネ
ルギーを加えながら酸化、窒化をする方法であり、製造
工程で温度が上昇しポリエステル等のプラスチック基板
を用いるビデオ用磁気記録媒体には不向きであり、ま
た、ウエットシステムの溶液反応を用いる方法では実用
上の特性を有する膜を形成すると膜厚ご大きくなりスペ
ーシングロスを生じる結果となり、膜厚を薄くすると充
分な耐摩耗性が得られないばかりか腐蝕を促進する等副
次的な問題を生じた。Further, in each of the prior arts in which a protective layer is provided, 1),
In 2), 3) and 4), good effects on both corrosion resistance and wear resistance cannot be obtained unless the thickness of the coating is about 0.1 μm or more. At that thickness, spacing loss occurs and high density is achieved. Sufficient performance as a recording medium cannot be obtained. Further, since the film is additionally formed, the adhesive force between the magnetic layer and the film is insufficient, and delamination is likely to occur, which is particularly problematic in wear resistance. Further, in 5), the lubricant coating was easily peeled off and consumed, so that the characteristics such as still durability were not sufficient. In 6), a method of oxidizing or nitriding while applying heat or kinetic energy of particles is not suitable for a magnetic recording medium for video using a plastic substrate such as polyester because the temperature rises in the manufacturing process. In the method using the solution reaction of the wet system, when a film having practical characteristics is formed, the film thickness becomes large, resulting in spacing loss. When the film thickness is made thin, sufficient wear resistance cannot be obtained and corrosion is also caused. It caused secondary problems such as promoting
II 発明の目的 本発明は上記の如き問題点を解決するためなされたもの
で、本発明の目的は、耐蝕性、耐摩耗性等の物理、化学
的特性および電磁変換特性に優れた磁気記録媒体を提供
しようとするものである。II Object of the Invention The present invention has been made to solve the above problems, and an object of the present invention is to provide a magnetic recording medium excellent in physical and chemical characteristics such as corrosion resistance and abrasion resistance, and electromagnetic conversion characteristics. Is to provide.
III 発明の具体的構成 本発明の上記目的は、非磁性基板上に、磁性薄膜を有す
る磁気記録媒体において、磁性薄膜の表面からその近傍
では磁性金属の酸化物結晶相を含む酸化物結晶層が形成
され、該層の膜厚方向に連続して、前記金属および前記
金属の酸化物が混在して含まれる層が形成され、該金属
および金属酸化物が混在して含まれる層では、各膜層深
さにおいて金属および金属酸化物を形成する全金属原子
に対する酸化物形成金属原子の割合αが磁性薄膜の表面
から膜厚方向に連続的に減少し、前記αが0.5である磁
性薄膜の表面から膜厚方向の深さ位置が50Å〜95Åであ
るとこを特徴とする磁気記録媒体により達成される。III Specific Configuration of the Invention The above object of the present invention is to provide a magnetic recording medium having a magnetic thin film on a non-magnetic substrate, in which an oxide crystal layer containing an oxide crystal phase of a magnetic metal is provided from the surface of the magnetic thin film to its vicinity. A layer containing the metal and the oxide of the metal mixed therein is formed continuously in the film thickness direction of the layer, and each layer is a film containing the metal and the metal oxide mixed. The surface of the magnetic thin film in which the ratio α of the oxide forming metal atoms to the total metal atoms forming the metal and the metal oxide at the layer depth decreases continuously in the film thickness direction from the surface of the magnetic thin film, and α is 0.5. The magnetic recording medium is characterized in that the depth position in the film thickness direction is 50Å to 95Å.
本発明の磁気記録媒体において、磁性薄膜の表面からそ
の近傍の磁性金属の酸化物結晶相を含む酸化物結晶層で
は、磁性金属が例えばCo−Ni合金である場合、酸化物と
してCoO、Co3O4、NiO、Ni3O4等(他の微量原子の酸化物
を含んでもよい)の化学量論を満足する酸化物が混在
し、酸化物結晶相を形成する。また、磁性金属が他の合
金あるいは単体からなる金属の場合も同様に、化学量論
を満足する金属酸化物として存在する分子が結晶相を形
成する密度で存在するものである。この酸化物結晶相は
後記する如く、ESCA(Electron Spectroscopy For Chem
ical Analysis)、X線回折、電子線回折等の手段を用
いて、標準サンプルデータとの比較等から酸化物結晶相
と決められるものである。In the magnetic recording medium of the present invention, in the oxide crystal layer containing the oxide crystal phase of the magnetic metal from the surface of the magnetic thin film to the vicinity thereof, when the magnetic metal is, for example, Co—Ni alloy, CoO and Co 3 are used as the oxide. Oxides satisfying the stoichiometry of O 4 , NiO, Ni 3 O 4, etc. (which may contain oxides of other trace atoms) are mixed to form an oxide crystal phase. Similarly, when the magnetic metal is another alloy or a metal composed of a simple substance, the molecules existing as a metal oxide satisfying the stoichiometry are present at a density that forms a crystal phase. This oxide crystal phase is, as will be described later, ESCA (Electron Spectroscopy For Chem
ical analysis), X-ray diffraction, electron diffraction, etc., and is determined as an oxide crystal phase from comparison with standard sample data.
この酸化物結晶層は、物理的、化学的に安定な酸化物結
晶相を含み、かつ、表面からその近傍に存在するので耐
摩耗性、耐蝕性に優れ効果的な保護層として機能し、磁
気記録媒体の耐摩耗性、耐蝕性を良好にする。This oxide crystal layer contains a physically and chemically stable oxide crystal phase, and since it exists from the surface to its vicinity, it functions as an effective protective layer with excellent wear resistance and corrosion resistance. Improves wear resistance and corrosion resistance of the recording medium.
上記酸化物結晶層の膜厚方向に連続して形成される磁性
金属および該金属の酸化物が混在して含まれる層は、前
記酸化物結晶層に含まれる金属酸化物と同様に化学量論
を満足する金属酸化物が磁性金属と混在し、各膜層深さ
において金属および金属酸化物を形成する全金属原子に
対する酸化物形成金属原子の割合αが磁性薄膜の表面か
ら膜厚方向に連続的に減少するものである。この混在層
において前記αの値が0.5である磁性薄膜の膜厚方向の
深さ位置が、50Å〜95Åであることが実用上好ましく、
65Å〜80Åがより好ましい。The magnetic metal formed continuously in the thickness direction of the oxide crystal layer and the layer containing the oxide of the metal mixed therein have the same stoichiometry as the metal oxide contained in the oxide crystal layer. A metal oxide satisfying the condition is mixed with the magnetic metal, and the ratio α of the metal atoms forming the oxide to the total metal atoms forming the metal and the metal oxide at each film layer depth is continuous from the surface of the magnetic thin film in the film thickness direction. Will be reduced. In this mixed layer, the depth position in the film thickness direction of the magnetic thin film in which the value of α is 0.5 is practically preferably 50Å to 95Å,
65Å to 80Å is more preferable.
また、本発明における前記混在層とは、通常の磁性薄膜
とその上に別途の方法、例えば熱処理、塗布等により形
成された金属酸化物層の境界部に形成される相互拡散領
域を指すものではなく、金属と化学量論を満たす金属酸
化物の混合組成を恣意的に制御したもので、その混在層
の膜厚も大きく(100Å以上)、組成の変化も連続的か
つ緩やか(例えば100Å当たり60%程度)なものであ
る。Further, the mixed layer in the present invention does not mean an interdiffusion region formed at the boundary between a normal magnetic thin film and a metal oxide layer formed thereon by another method such as heat treatment or coating. However, the mixed composition of the metal and the metal oxide that satisfies the stoichiometry is arbitrarily controlled. The film thickness of the mixed layer is large (100 Å or more), and the composition change is continuous and gradual (for example, 60 per 100 Å). %)).
この混在層は、保護層として機能する前記金属酸化物結
晶層に連続しているため界面における表面金属酸化物結
晶層の剥離という問題も生ぜず、耐摩耗性が向上する。
さらに、この混在層の前記金属酸化物結晶層との界面付
近での混在組成は、化学量論を満足する金属酸化物が多
く含まれ、保護機能を強化し、一方、混在層が基板に近
ずくにつれて金属酸化物の存在割合が減少し、磁性金属
の占める割合が増加することになり磁気記録媒体の出力
レベル増加に寄与する。さらにまた、混在層の基板側で
は、磁性金属中に微量の金属酸化物が存在することにな
り、このことは磁性金属結晶粒子の成長を抑制し、粒子
の微細化に寄与し、結果として、磁気記録媒体のC/Nの
飛躍的向上が実現される。Since this mixed layer is continuous with the metal oxide crystal layer that functions as a protective layer, the problem of peeling of the surface metal oxide crystal layer at the interface does not occur, and wear resistance is improved.
Further, the mixed composition of the mixed layer near the interface with the metal oxide crystal layer contains a large amount of metal oxides satisfying the stoichiometry and enhances the protective function, while the mixed layer is close to the substrate. The proportion of the metal oxide present decreases with the decrease, and the proportion occupied by the magnetic metal increases, which contributes to an increase in the output level of the magnetic recording medium. Furthermore, on the substrate side of the mixed layer, a trace amount of metal oxide is present in the magnetic metal, which suppresses the growth of the magnetic metal crystal particles and contributes to the fineness of the particles. A dramatic improvement in C / N of magnetic recording media is realized.
上記の如き特徴を有する磁性薄膜は、スペーシングロス
も記録波長0.6μm程度で2dB以下と小さく、電磁変換特
性の著しい低下もなく、機械的強度も強い、耐蝕性、耐
摩耗性および電磁変換特性に良好な性質を有するもので
ある。The magnetic thin film having the above characteristics has a spacing loss as small as 2 dB or less at a recording wavelength of about 0.6 μm, has no significant deterioration in electromagnetic conversion characteristics, has high mechanical strength, corrosion resistance, wear resistance and electromagnetic conversion characteristics. It has excellent properties.
なお、本発明の磁気記録媒体は、この混在層の磁性薄膜
表面からの膜厚方向における深さが100Å程度までの磁
性金属と金属酸化物の混合組成を規定するもので、それ
より内部即ち、膜厚方向における磁性層の構造を規定す
るものではなく、例えば、磁性層積層、非磁性層の積層
等の既知の構造を除外するものではない。Incidentally, the magnetic recording medium of the present invention defines the mixed composition of the magnetic metal and the metal oxide up to a depth of about 100 Å in the film thickness direction from the surface of the magnetic thin film of the mixed layer. It does not prescribe the structure of the magnetic layer in the film thickness direction, and does not exclude known structures such as magnetic layer stacks and non-magnetic layer stacks.
本発明の磁気記録媒体において、非磁性基板上に磁性薄
膜を形成する方法としては、公知の真空蒸着(反応蒸着
を含む)、スパッタリング、イオンブレーティング、CV
D(Chemical Vapor Deposition)等の方法が挙げられ
る。ここで好ましくは電子ビーム反応蒸着法である。In the magnetic recording medium of the present invention, as a method for forming a magnetic thin film on a non-magnetic substrate, known vacuum deposition (including reactive deposition), sputtering, ion plating, CV
A method such as D (Chemical Vapor Deposition) may be used. Here, the electron beam reactive vapor deposition method is preferable.
本発明の磁気記録媒体に使用できる磁性金属材料として
は、Fe、Co、Niその他の磁性金属あるいは、Fe−Co、Fe
−Ni、Co−Ni、Fe−Si、Fe−Rh、Fe−V、Fe−Cu、Fe−
Au、Co−P、Co−V、Co−Si、Co−Y、Co−La、Co−C
e、Co−Pr、Co−Sm、Co−Mn、Co−Pt、Ni−Cu、Co−Ni
−Fe、Co−Ni−Ag、Co−Ni−Zn、Co−Si−Al、Fe−Si−
Al、Mn−Bi、Mn−Sb、Mn−Al、等の合金系磁性金属が挙
げられる。ここで好ましくはCoあるいはCo−Ni合金(Ni
含有率30wt%以下)である。なお、必要に応じてその他
の微量成分を含有させてもよい。Examples of magnetic metal materials that can be used in the magnetic recording medium of the present invention include magnetic metals such as Fe, Co and Ni, or Fe--Co and Fe.
-Ni, Co-Ni, Fe-Si, Fe-Rh, Fe-V, Fe-Cu, Fe-
Au, Co-P, Co-V, Co-Si, Co-Y, Co-La, Co-C
e, Co-Pr, Co-Sm, Co-Mn, Co-Pt, Ni-Cu, Co-Ni
-Fe, Co-Ni-Ag, Co-Ni-Zn, Co-Si-Al, Fe-Si-
Examples include alloy magnetic metals such as Al, Mn-Bi, Mn-Sb, and Mn-Al. Here, Co or Co-Ni alloy (Ni
The content rate is 30 wt% or less). In addition, you may contain other trace components as needed.
非磁性基板としては、ポリエチレンテレフタレート、ポ
リエチレン−2,6−ナフタレート、ポリカーボネート、
ポリプロピレン、セルローストリアセテート、ポリイミ
ド、アラミド等の通常用いられているプラスチッノ基板
が挙げられ、好ましくはポリエチレンテレフタレートで
ある。As the non-magnetic substrate, polyethylene terephthalate, polyethylene-2,6-naphthalate, polycarbonate,
Examples of the commonly used plastino substrate such as polypropylene, cellulose triacetate, polyimide and aramid are preferred, and polyethylene terephthalate is preferred.
また、本発明の磁気記録媒体は、滑り性の改善、帯電防
止、転写防止、保存性向上、耐摩耗性向上の目的で、基
板上に、前述した磁性薄膜形成後および/又は形成前に
たとえば公知の塗布方法、蒸着方法等に依り、オーバー
コート層やバックコート層を設けてもよい。これらの塗
布方法、蒸着方法は、たとえば特開昭54−123922号、同
54−123923号、同56−71284号、同56−71286号、同56−
71287号、同56−11626号、同57−135442号の公開特許公
報明細書に掲載されている。Further, the magnetic recording medium of the present invention, for the purpose of improving slipperiness, preventing electrification, preventing transfer, improving storage stability, and improving abrasion resistance, for example, before and / or after formation of the above-mentioned magnetic thin film on the substrate, An overcoat layer or a backcoat layer may be provided by a known coating method, vapor deposition method, or the like. These coating methods and vapor deposition methods are described, for example, in JP-A No. 54-123922.
54-123923, 56-71284, 56-71286, 56-
71287, 56-11626, and 57-135442.
これらのオーバーコート層、バックコート層の材料とし
て各種のポリマー(たとえばウレタン樹脂、エポキシ樹
脂、塩化ビニル−酢酸ビニル共重合体等)やシリコン樹
脂等の各有機オリゴマーやポリマー:カーボンブラッ
ク、アルミナ等の無機材料:フエノール誘導体等の酸化
防止剤やアミン誘導体等の一重項酸素クエンチヤー等の
低分子有機化合物の各種材料が使用できる他、潤滑剤、
研磨剤、帯電防止剤、分散剤と呼ばれている各種の成分
を添加して使用することができる。As materials for these overcoat layers and backcoat layers, various polymers (for example, urethane resins, epoxy resins, vinyl chloride-vinyl acetate copolymers) and organic oligomers and polymers such as silicon resins: carbon black, alumina, etc. Inorganic materials: Various materials such as antioxidants such as phenol derivatives and low molecular weight organic compounds such as singlet oxygen quenchers such as amine derivatives can be used, lubricants,
Various components called an abrasive, an antistatic agent, and a dispersant can be added and used.
第1図に、本発明の磁気記録媒体を製造する際に使用す
る装置の一実施例の要部断面図を示す。FIG. 1 shows a cross-sectional view of an essential part of an embodiment of an apparatus used for manufacturing the magnetic recording medium of the present invention.
この装置の内部は、全体を符号1で示すケーシングによ
り外気から気密にシールされており、ケーシング1内は
分離隔壁2により非磁性基板3を送出・巻取る室と蒸着
室に分けられ、ケーシング1の底部には排気管4が設け
られ、排気管4は真空排気装置5に接続している。The inside of this apparatus is hermetically sealed from the outside by a casing indicated by reference numeral 1, and the inside of the casing 1 is divided by a partition wall 2 into a chamber for feeding / winding the non-magnetic substrate 3 and a vapor deposition chamber. An exhaust pipe 4 is provided at the bottom of the exhaust pipe 4, and the exhaust pipe 4 is connected to a vacuum exhaust device 5.
送出・巻取る室には、基板走行系として、送出軸6、2
個のフリーローラ7、基板支持体8、巻取軸9を有して
いる。蒸着室には蒸着系として電子ビーム発生装置10、
るつぼ11、るつぼ11内に入れた被着用磁性材料12があ
り、さらに、基板支持体8とるつぼ11との間に形成され
る飛翔空間内に突出するマスク13が設けられ、基板3に
磁性材料12の飛翔蒸気流が入射する角度を規制する如く
なっている。マスク13は、中空構造であり、その入射角
規制先端部近傍に、基板支持体8にセットされる基板3
の幅方向に長辺を有するスリット状噴出口14が設けら
れ、酸素ガス等の反応性ガスの導入パイプ15よりガスG
が導入され、スリット状噴出口14から基板3に向かい所
定の角度で噴出する如くなっている。反応性ガスの噴出
方向は、第2図に示す如く、噴出ガスが基板3に衝突す
る位置における基板面に立てた法線とガスの噴出方向と
のなす角θが、90゜以上が好ましく、より好ましくは14
0゜〜180゜である。In the delivery / winding chamber, the delivery shafts 6 and 2 are provided as a substrate traveling system.
It has a free roller 7, a substrate support 8, and a winding shaft 9. In the vapor deposition chamber, an electron beam generator 10, as a vapor deposition system,
There is a crucible 11 and a magnetic material 12 to be attached which is put in the crucible 11. Further, a mask 13 is provided to project into a flight space formed between the substrate support 8 and the crucible 11, and the magnetic material is provided on the substrate 3. It is designed to control the angle of incidence of the 12 flying vapor streams. The mask 13 has a hollow structure, and the substrate 3 to be set on the substrate support 8 is provided in the vicinity of the incident angle regulating tip portion.
Is provided with a slit-shaped jet port 14 having a long side in the width direction of the gas G through a reactive gas introduction pipe 15 such as oxygen gas.
Is introduced and jetted at a predetermined angle from the slit-shaped jet port 14 toward the substrate 3. As shown in FIG. 2, the jet direction of the reactive gas is preferably such that the angle θ formed by the normal line standing on the substrate surface at the position where the jet gas collides with the substrate 3 and the jet direction of the gas is 90 ° or more, More preferably 14
It is 0 ° to 180 °.
さらに、噴出口14と基板面との間隔は、15mm以下が好ま
しく、より好ましくは3〜10mmである。Further, the distance between the ejection port 14 and the substrate surface is preferably 15 mm or less, more preferably 3 to 10 mm.
噴出ガスの速度、量と噴出口14のスリットの幅は相関的
に適正値が決められるが、スリットの幅は5mm以下が好
ましく、より好ましくは0.5〜2mmであり、噴出ガスの速
度、量は、スリット幅10cmにつき2×10-2〜0.5Pacm2/s
が好ましく、より好ましくはスリット幅10cmにつき0.1
〜0.3Pacm3/sである。このとき、噴出ガスの速度、量の
均一性を高めるために、導入パイプ15と導入口との間に
タンクを設けることもできる。Velocity of the jet gas, the amount of the slit and the width of the slit of the jet outlet 14 is determined to be an appropriate value in correlation, but the width of the slit is preferably 5 mm or less, more preferably 0.5 to 2 mm, the velocity of the jet gas, the amount is , 2 × 10 -2 ~ 0.5Pacm 2 / s per 10cm slit width
Is preferable, and more preferably 0.1 per slit width of 10 cm.
~ 0.3 Pacm 3 / s. At this time, a tank may be provided between the introduction pipe 15 and the introduction port in order to improve the uniformity of the velocity and amount of the ejected gas.
その他、基板支持体、マスク等における冷却機構等は省
略してあるが、当業界で公知の技術を、任意に選択的に
使用できる。In addition, although the substrate support, the cooling mechanism in the mask, etc. are omitted, a technique known in the art can be optionally used.
また、実施例では電子ビーム加熱法を用いたが、抵抗加
熱、レーザービーム加熱等の方法によってもよい。Further, although the electron beam heating method is used in the embodiment, a resistance heating method, a laser beam heating method or the like may be used.
本発明に使用する反応性ガスとしては、酸素、酸素の同
素体および酸素の活性種から選ばれる少なくとも1種を
含むガスであればよく、該ガスと併用できる他のガスと
して、たとえば窒素(N2)ガス、ヘリウムガス(He)、
キセノンガス(Xe)、ラドンガス(Rn)、アルゴン(A
r)、ネオン(Ne)などの不活性ガス、一酸化炭素(C
O)、炭酸ガス(CO2)、水素(H2)、水蒸気(H2O)を
単独で、若しくは2種類以上を混合して併用できる。The reactive gas used in the present invention may be a gas containing at least one selected from oxygen, an allotrope of oxygen and an active species of oxygen, and another gas that can be used in combination with the gas is, for example, nitrogen (N 2 ) Gas, helium gas (He),
Xenon gas (Xe), radon gas (Rn), argon (A
r), inert gas such as neon (Ne), carbon monoxide (C
O), carbon dioxide (CO 2 ), hydrogen (H 2 ), steam (H 2 O) can be used alone or in combination of two or more.
一般に、磁性薄膜の組成分析には、オージェスペクトル
分析、ESCA、X線回折等の手段が用いられるが、オージ
ェスペクトル分析においては、薄膜を形成している原子
の組成は分析できるもの、原子の結合状態等は不明であ
り、例えば、酸素原子が金属の酸化物分子として存在す
るか遊離の酸素分子の形で薄膜に組み込まれているかは
区別のできないのが技術の現状である。本発明の磁気記
録体では、磁性金属および該金属の酸化物(化学量論を
満足する)の組成をESCAにより、各試料の膜厚方向の深
さにおいて求めたものであり、以下にその概略を説明す
る。In general, means such as Auger spectrum analysis, ESCA, and X-ray diffraction are used for composition analysis of magnetic thin films. In Auger spectrum analysis, the composition of atoms forming a thin film can be analyzed, and the combination of atoms The state and the like are unknown, and it is the current state of the art that it is not possible to distinguish, for example, whether oxygen atoms are present as metal oxide molecules or incorporated into the thin film in the form of free oxygen molecules. In the magnetic recording medium of the present invention, the composition of the magnetic metal and the oxide of the metal (which satisfies the stoichiometry) was determined by ESCA at the depth in the film thickness direction of each sample. Will be explained.
ESCAでは金属等の酸化入状態についての情報が得られ
る。例えば、Coについては2pの光電子に由来するシグナ
ルを測定することにより、Coが金属状態あるいは酸化状
態にあるかの知見が得られる。試料の膜厚方向について
分析するためには、アルゴンイオン銃等によりエッチン
グを行ない、各膜厚深さにおいてESCAで測定をする。エ
ッチング条件としては、例えば5kV、25mA、8mmラスター
であり、厚さ既知のCo−Ni合金では、そのエッチング速
度は約12Å/分である。磁性金属として金属コバルトを
用いた場合を例にして、得られる磁気記録媒体試料の磁
性薄膜における金属と金属酸化物の組成比の求め方は以
下のとおりである。ESCA provides information on the state of oxidation and oxidation of metals. For example, by measuring a signal derived from a 2p photoelectron of Co, it is possible to find out whether Co is in a metallic state or an oxidized state. In order to analyze the film thickness direction of the sample, etching is performed with an argon ion gun or the like, and ESCA measurement is performed at each film thickness depth. The etching conditions are, for example, 5 kV, 25 mA, and 8 mm raster, and the etching rate is about 12 Å / min for a Co-Ni alloy of known thickness. Taking the case of using metallic cobalt as the magnetic metal as an example, the method for obtaining the composition ratio of the metal and the metal oxide in the magnetic thin film of the obtained magnetic recording medium sample is as follows.
第1に標準試料のESCAスペクトルを求める。具体的には
コバルト純金属標準試料を充分にエッチングし表面を清
浄にした後、ESCA測定により金属コバルトの標準スペク
トル(図3に示す)を得る。次に、コバルト酸化物(Co
O)についても同様にして標準スペクトル(図4に示
す)を得る。(なお、図3,4に示したスペクトルはベー
スライン補正後のCo2pのスペクトルである。)この図3,
4の比較によればピーク位置の移動(化学シフト)やピ
ーク形状の差異等が明確に認められる。ここで、金属コ
バルトとコバルト酸化物の各感度(単位原子数当たりの
光電子シグナルのカウント数)はほぼ等しいと仮定し、
また金属コバルトとコバルト酸化物の混合物のスペクト
ルは、金属コバルトのコバルト酸化物の各標準スペクト
ルに各々の混合比を乗じた後加算したものに等しいと考
える。このとき、金属コバルトとコバルト酸化物の各標
準スペクトルに各混合比に相当する適当な定数を乗じた
後加算したものを各混合比における標準スペクトルとす
ることができ、試料の各膜厚深さにおけるスペクトルと
比較することにより、金属コバルトとコバルト酸化物の
混合比が推定できる。なお、コバルト酸化物の標準スペ
クトルとしてCoOのみを示したが、以下の実施例でも、
コバルト酸化物としての他の成分のCo2O3はX線回折、E
SCAスペクトルの分析結果からほとんど無視できるとい
うことを考え、ここでは酸化コバルトとしてはCoO単独
化合物として考えた。First, the ESCA spectrum of the standard sample is obtained. Specifically, a cobalt pure metal standard sample is sufficiently etched to clean the surface, and then a standard spectrum of metal cobalt (shown in FIG. 3) is obtained by ESCA measurement. Next, cobalt oxide (Co
A standard spectrum (shown in FIG. 4) is similarly obtained for O). (Note that the spectra shown in FIGS. 3 and 4 are the Co 2 p spectra after baseline correction.)
Comparison of 4 clearly shows the shift of the peak position (chemical shift) and the difference in the peak shape. Here, it is assumed that the sensitivity of each of metallic cobalt and cobalt oxide (the number of photoelectron signal counts per unit number of atoms) is almost equal,
Further, it is considered that the spectrum of the mixture of metallic cobalt and cobalt oxide is equal to the standard spectrum of the cobalt oxide of metallic cobalt multiplied by the respective mixing ratios and then added. At this time, the standard spectrum at each mixing ratio can be obtained by multiplying each standard spectrum of metallic cobalt and cobalt oxide by an appropriate constant corresponding to each mixing ratio, and then adding the result to obtain the standard spectrum at each mixing ratio. The mixing ratio of metallic cobalt and cobalt oxide can be estimated by comparing with the spectrum in FIG. Although only CoO is shown as the standard spectrum of cobalt oxide, in the following examples,
Co 2 O 3 which is another component as cobalt oxide is X-ray diffraction, E
Considering that it can be almost ignored from the analysis result of the SCA spectrum, the cobalt oxide was considered as a CoO single compound here.
また、Co−Ni合金を磁性金属として用いる場合は、上述
のCo金属単体を対象にしたと同様に、Ni金属についても
標準スペクトルを作成し、CoとNiを総合的に評価するこ
とにより金属と金属酸化物の混合比を推定できる。同様
の手法により、他の金属、合金等についても行なうこと
ができる。When a Co-Ni alloy is used as the magnetic metal, a standard spectrum is also created for the Ni metal in the same manner as for the Co metal simple substance described above, and a metal is obtained by comprehensively evaluating Co and Ni. The mixing ratio of metal oxides can be estimated. Other metals, alloys, and the like can be used in the same manner.
IV 発明の具体的実施例 以下、本発明を実施例および比較例により、さらに具体
的に説明するが、本発明はこれにより限定されるもので
はない。IV Specific Examples of the Invention Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
実施例1 第1図に示した装置を用いてスリット状の酸素ガス噴出
口を飛翔気流入射角規制用マスクの先端部近傍に設け以
下の条件で磁気記録媒体を製造した。Example 1 A magnetic recording medium was manufactured under the following conditions by using a device shown in FIG. 1 to provide a slit-shaped oxygen gas ejection port in the vicinity of the tip of a mask for controlling the incidence angle of flying airflow.
酸素ガス噴出量 2.5kg/cm2,0.7/min ガス噴出角度 θ=170゜ 噴出口と基板との距離 7.0mm 圧力7×10-3Paにおいて、12.5μm厚のポリエチレンテ
レフタレートの基板を50m/minの速度で走行させなが
ら、Co−Ni(80:20)の磁性材料を電子ビーム加熱によ
り蒸発させ、酸素ガスを噴出口から噴出させ、1200Å厚
の磁性薄膜を形成した。磁性薄膜形成後、リン酸エステ
ル系潤滑剤をテープ表面に100Å程度の厚みで塗布し、
磁気記録媒体の原反を12.65mm幅のテープに裁断し、実
施例テープ1を得た。Oxygen gas ejection rate 2.5kg / cm 2 , 0.7 / min Gas ejection angle θ = 170 ° Distance between ejection port and substrate 7.0mm At pressure 7 × 10 -3 Pa, 12.5μm thick polyethylene terephthalate substrate is 50m / min The magnetic material of Co-Ni (80:20) was evaporated by electron beam heating and oxygen gas was ejected from the ejection port to form a magnetic thin film having a thickness of 1200 Å while running at the speed of. After forming the magnetic thin film, apply phosphate ester lubricant to the tape surface to a thickness of about 100Å,
An original tape of the magnetic recording medium was cut into a tape having a width of 12.65 mm to obtain Example Tape 1.
実施例テープ1の各膜厚方向深さにおける金属および金
属酸化物を形成する全金属原子に対する酸化物形成金属
原子の割合αをESCA測定法により求めた。ESCA測定に用
いた装置は、Perkin−Elmer社,PH1Model 560型ESCA/SAM
であり、Alアノードを使用し、15kV,300Wの条件であ
る。エネルギー分解能はパスエネルギー25eVを用いた。
また、エッチングはアルゴンイオン銃により行ない、エ
ッチング速度は、Co−Ni合金について約12Å/分であっ
た。ESCA測定の結果を第6図に示す。表面(すべて酸化
物)から遠ざかるにつれて、酸化物が減少しているのが
わかる。また、磁性薄膜形成後、潤滑剤塗布前の磁気テ
ープのX線回折スペクトルパターンを第5図に示す。The ratio α of the metal atoms forming the oxide to the total metal atoms forming the metal and the metal oxide at each depth in the film thickness direction of Example Tape 1 was determined by the ESCA measurement method. The equipment used for ESCA measurement is Perkin-Elmer, PH1 Model 560 ESCA / SAM.
The conditions are 15 kV and 300 W using an Al anode. The energy resolution used was a pass energy of 25 eV.
The etching was performed with an argon ion gun, and the etching rate was about 12Å / min for the Co-Ni alloy. The result of ESCA measurement is shown in FIG. It can be seen that the oxide decreases as the distance from the surface (all oxides) increases. Further, FIG. 5 shows the X-ray diffraction spectrum pattern of the magnetic tape after the magnetic thin film was formed and before the lubricant was applied.
さらに、上記条件において、酸素ガス噴出量を2.5kg/cm
3,0.35〜0.75/minと変えた以外は同様にして実施例
テープ2〜5を得た。Furthermore, under the above conditions, the oxygen gas ejection rate is 2.5 kg / cm
Example tapes 2 to 5 were obtained in the same manner except that the rate was changed to 3 , 0.35 to 0.75 / min.
実施例テープ2〜5について実施例テープ1と同様にし
てESCA測定を行ない、前記α=0.5の膜厚深さを求め
た。得られた各テープ試料のスチル耐久性を市販VTRデ
ッキを用いて測定した。スチル耐久性は、バックテンシ
ョン12gとし、出力が3dB低下するまでの時間を分の単位
で求めた。得られた結果を前記αが0.5である磁性表面
からの膜厚方向深さ位置を指標として、各テープ試料に
ついて求めた値を横軸とし、対応したスチル耐久性およ
び5MHzにおけるC/Nの測定値を縦軸として図7に示す。
なお、C/Nは市販のVHS用ビデオテープを基準(0dB)と
して測定したものである。ESCA measurement was performed on Example tapes 2 to 5 in the same manner as in Example tape 1 to obtain the film thickness depth of α = 0.5. The still durability of each of the obtained tape samples was measured using a commercially available VTR deck. The still durability was set to a back tension of 12 g, and the time until the output decreased by 3 dB was obtained in minutes. The obtained results were measured using the depth position in the film thickness direction from the magnetic surface where α is 0.5 as an index, and the value obtained for each tape sample as the horizontal axis, and the corresponding still durability and C / N measurement at 5 MHz. The values are shown on the vertical axis in FIG. 7.
The C / N is measured with a commercially available VHS video tape as a reference (0 dB).
図7より、αが0.5である磁性表面からの膜厚方向深さ
位置が50Å〜95Åであるのが実用上好ましいことがわか
る。From FIG. 7, it is found that it is practically preferable that the depth position in the film thickness direction from the magnetic surface having α of 0.5 is 50Å to 95Å.
図面は本発明の一実施例を示すもので、第1図は本発明
の磁気記録媒体の製造に使用する装置の要部断面図、第
2図は第1図装置の要部拡大図、第3図は標準金属コバ
ルト試料のESCAスペクトル、第4図は標準酸化コバルト
(II)試料のESCAスペクトル、第5図は実施例1で得ら
れた磁性薄膜のX線回折スペクトロパターン、第6図は
実施例1で得られた磁性薄膜の各膜厚方向深さにおける
組成分析図、第7図は実施例1で得られたα=0.5の膜
厚方向深さ位置の異なる各テープ試料のスチル耐久性お
よびC/N特性を示す図である。The drawings show one embodiment of the present invention. FIG. 1 is a sectional view of an essential part of an apparatus used for manufacturing a magnetic recording medium of the present invention, and FIG. 2 is an enlarged view of an essential part of the apparatus. FIG. 3 is the ESCA spectrum of the standard metallic cobalt sample, FIG. 4 is the ESCA spectrum of the standard cobalt (II) oxide sample, FIG. 5 is the X-ray diffraction spectroscopic pattern of the magnetic thin film obtained in Example 1, and FIG. FIG. 7 is a compositional analysis diagram at each depth in the film thickness direction of the magnetic thin film obtained in Example 1, and FIG. 7 is a still durability of each tape sample having α = 0.5 and different depth positions in the film thickness direction obtained in Example 1. It is a figure which shows the sex and C / N characteristics.
Claims (2)
録媒体において、磁性薄膜の表面からその近傍では磁性
金属の酸化物結晶相を含む酸化物結晶層が形成され、該
層の膜厚方向に連続して、前記金属および前記金属の酸
化物が混在して含まれる層が形成され、該金属および金
属酸化物が混在して含まれる層では、各膜厚深さにおい
て、金属および金属酸化物を形成する全金属原子に対す
る酸化物形成金属原子の割合αが磁性薄膜の表面から膜
厚方向に連続的に減少し、前記αが0.5である磁性薄膜
の表面から膜厚方向の深さ位置が50Å〜95Åであること
を特徴とする磁気記録媒体。1. A magnetic recording medium having a magnetic thin film on a non-magnetic substrate, wherein an oxide crystal layer containing an oxide crystal phase of a magnetic metal is formed from the surface of the magnetic thin film to its vicinity, and the thickness of the layer. In a continuous direction, a layer containing the metal and the oxide of the metal mixed is formed, and in the layer containing the metal and the metal oxide mixed, the metal and the metal are formed at each film thickness depth. The ratio α of the metal atoms forming an oxide to all the metal atoms forming an oxide decreases continuously from the surface of the magnetic thin film in the film thickness direction, and the α is 0.5 from the surface of the magnetic thin film in the film thickness direction. A magnetic recording medium having a position of 50Å to 95Å.
有率30wt%以下)であることを特徴とする特許請求の範
囲第(1)項記載の磁気記録媒体。2. The magnetic recording medium according to claim 1, wherein the magnetic metal is Co or a Co—Ni alloy (Ni content is 30 wt% or less).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59045999A JPH0679368B2 (en) | 1984-03-10 | 1984-03-10 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59045999A JPH0679368B2 (en) | 1984-03-10 | 1984-03-10 | Magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60191425A JPS60191425A (en) | 1985-09-28 |
| JPH0679368B2 true JPH0679368B2 (en) | 1994-10-05 |
Family
ID=12734790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59045999A Expired - Lifetime JPH0679368B2 (en) | 1984-03-10 | 1984-03-10 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679368B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01178121A (en) * | 1988-01-08 | 1989-07-14 | Nec Corp | Magnetic recording medium |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5883327A (en) * | 1981-11-12 | 1983-05-19 | Fuji Photo Film Co Ltd | Magnetic recording medium |
-
1984
- 1984-03-10 JP JP59045999A patent/JPH0679368B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60191425A (en) | 1985-09-28 |
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