JPH0679963B2 - Method for producing diamond-like carbon - Google Patents
Method for producing diamond-like carbonInfo
- Publication number
- JPH0679963B2 JPH0679963B2 JP60060340A JP6034085A JPH0679963B2 JP H0679963 B2 JPH0679963 B2 JP H0679963B2 JP 60060340 A JP60060340 A JP 60060340A JP 6034085 A JP6034085 A JP 6034085A JP H0679963 B2 JPH0679963 B2 JP H0679963B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- diamond
- producing diamond
- producing
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 28
- 229910052799 carbon Inorganic materials 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000007789 gas Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 description 11
- 239000010432 diamond Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- -1 optics Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は低圧および比較的低温中での、固体の炭素源を
用いたダイヤモンド薄膜の製造方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a method for producing a diamond thin film using a solid carbon source at low pressure and relatively low temperature.
［従来の技術］ 近年新しい材料として注目を集めている低圧および比較
的低温中でのダイヤモンド薄膜の製造方法としては、化
学気相蒸着法（プラズマCVD），イオン化蒸着法があ
り、ダイヤモンドの生成が確認されている。さらに近年
プラズマ発生方法である、マイクロ波放電を用いた提案
もなされている（特開昭58-110494）。これらの生成方
法は混合ガスとして炭化水素と水素ガスを使用し、この
混合ガスを加熱した基板表面に導入し、炭化水素の熱分
解によるダイヤモンドを析出させるものである。またグ
ラファイトを炭素源とするイオンビーム法もある。[Prior Art] Chemical vapor deposition (plasma CVD) and ionization vapor deposition are methods for producing diamond thin films at low pressure and relatively low temperature, which have been attracting attention as new materials in recent years, and diamond is produced. It has been confirmed. Furthermore, in recent years, a proposal using microwave discharge, which is a plasma generation method, has been made (Japanese Patent Laid-Open No. 58-110494). In these production methods, hydrocarbon and hydrogen gas are used as a mixed gas, and this mixed gas is introduced onto a heated substrate surface to deposit diamond by thermal decomposition of the hydrocarbon. There is also an ion beam method using graphite as a carbon source.
［発明が解決しようとする問題点］ しかしながらこれらの方法で生成されたダイヤモンドは
その生膜速度が遅い欠点があり、この原因はメタン等の
炭化水素ガスを分解することを基本としているため真空
度が低下し、平均自由行路が小さくなってしまうためで
あると考えられる。また従来からいわゆる反応性イオン
プレーティング法によりダイヤモンド薄膜を製造した提
案はなされていない。[Problems to be Solved by the Invention] However, the diamond produced by these methods has a drawback that the formation rate of the diamond is slow, and the cause of this is that the hydrocarbon gas such as methane is basically decomposed. It is thought that this is because the average free path becomes smaller. Further, conventionally, no proposal has been made to manufacture a diamond thin film by a so-called reactive ion plating method.
本発明はこの点を考慮して、成膜速度を向上させたダイ
ヤモンドライクカーボンの製造方法を提供することを目
的とする。In view of this point, the present invention has an object to provide a method for producing diamond-like carbon with an improved film formation rate.
［問題点を解決するための手段］ 本発明のダイヤモンド薄膜の製造方法は、電子ビーム等
の加熱により真空中で炭素を加熱蒸発させ、基板上にダ
イヤモンドライクカーボンを堆積させる方法において、
固体の炭素源であるグラファイトを用いて炭素蒸気をイ
オン化電極（プローブ）およびフィラメント，あるいは
イオン化電極（プローブ）により10-4Torr台の比較的高
真空中でイオン化し、さらに水素およびアルゴンの混合
ガス，あるいは水素ガスを添加することによりダイヤモ
ンドライクカーボンを形成するものである。[Means for Solving the Problems] A method for producing a diamond thin film of the present invention is a method of heating and evaporating carbon in a vacuum by heating with an electron beam or the like to deposit diamond-like carbon on a substrate.
Carbon gas is ionized in a relatively high vacuum of 10 -4 Torr level using a solid carbon source, graphite, by an ionization electrode (probe) and filament, or an ionization electrode (probe), and a mixed gas of hydrogen and argon is further added. Alternatively, diamond-like carbon is formed by adding hydrogen gas.
［実施例］ 第１図に示すように、真空槽１内にSiウェハー基板２を
配置し10-6Torrに真空排気した後、電子ビーム３を用い
てルツボ４内のグラファイト５を蒸発させ、同時にルツ
ボ上部に配置したイオン化電極６に直流50Vの電圧を印
加し、またルツボ４とプローブ６間に配置した熱電子放
出フィラメント７にも所定の電力を投入し蒸発した炭素
をイオン化する。その後真空槽内に水素およびアルゴン
の混合ガスを導入し、基板に直流−100〜−1KVの電圧を
印加し、シャッター８を開けて基板２上に成膜を行な
う。成膜速度としては0.01μm/min〜0.5μm/minの範囲
が好ましい。得られたSiウェハー基板上の成膜の評価を
行なったところ、Siウェハー上でHv1,500〜2,000の硬度
を示し、電子線回折およびESCAスペクトルによりダイヤ
モンド結合が形成されていることを確認した。Example As shown in FIG. 1, a Si wafer substrate 2 was placed in a vacuum chamber 1 and evacuated to 10 −6 Torr, and then graphite 5 in a crucible 4 was evaporated using an electron beam 3. At the same time, a DC voltage of 50 V is applied to the ionization electrode 6 arranged in the upper part of the crucible, and a predetermined electric power is also applied to the thermionic emission filament 7 arranged between the crucible 4 and the probe 6 to ionize the evaporated carbon. Then, a mixed gas of hydrogen and argon is introduced into the vacuum chamber, a voltage of −100 to −1 KV DC is applied to the substrate, the shutter 8 is opened, and a film is formed on the substrate 2. The film forming rate is preferably in the range of 0.01 μm / min to 0.5 μm / min. When the film formation on the obtained Si wafer substrate was evaluated, a hardness of Hv1,500 to 2,000 was shown on the Si wafer, and it was confirmed by electron diffraction and ESCA spectrum that a diamond bond was formed.
［発明の効果］ 本発明は固体の炭素源であるグラファイトを使用するた
めに、10-4Torr台の比較的高真空中でイオン化を行ない
かつ水素添加雰囲気中でダイヤモンドライクカーボンの
形成を行なうため、成膜速度を向上させることができ、
その用途としては耐摩耗性を要求される切削工具類の表
面処理，蒸発素子の放熱用ダイヤモンドヒートシンク，
音響用高比弾性率材料の表面処理，光学用，半導体用な
ど機能性ダイヤモンド薄膜として広い応用分野を有す
る。EFFECTS OF THE INVENTION The present invention uses graphite, which is a solid carbon source, to perform ionization in a relatively high vacuum of the order of 10 −4 Torr and to form diamond-like carbon in a hydrogenated atmosphere. , The film forming speed can be improved,
Its applications include surface treatment of cutting tools that require wear resistance, diamond heat sinks for heat dissipation of evaporation elements,
It has a wide range of applications as a functional diamond thin film for surface treatment of acoustic high specific elastic modulus materials, optics, and semiconductors.
第１図は本発明を実施するための製造装置の概略図。 1:真空槽、2:Siウェハー基板 3:電子ビーム、4:ルツボ 5:グラファイト、6:プローブ 7:フィラメント、8:シャッター FIG. 1 is a schematic view of a manufacturing apparatus for carrying out the present invention. 1: Vacuum chamber, 2: Si wafer substrate 3: Electron beam, 4: Crucible 5: Graphite, 6: Probe 7: Filament, 8: Shutter
Claims (6)
熱蒸発させ基板上にダイヤモンドライクカーボンを堆積
させる方法において、該炭素蒸気を電極によりイオン化
し、反応性ガスを添加することにより形成することを特
徴としたダイヤモンドライクカーボンの製造方法。1. A method for depositing diamond-like carbon on a substrate by heating and evaporating carbon in vacuum by electron beam heating or the like, which is formed by ionizing the carbon vapor with an electrode and adding a reactive gas. And a method for producing diamond-like carbon.
第（１）項記載のダイヤモンドライクカーボンの製造方
法。2. The method for producing diamond-like carbon according to claim 1, wherein carbon is graphite.
特許請求の範囲第（１）項記載のダイヤモンドライクカ
ーボンの製造方法。3. The method for producing diamond-like carbon according to claim 1, wherein the electrodes are probes and filaments.
（１）項記載のダイヤモンドライクカーボンの製造方
法。4. The method for producing diamond-like carbon according to claim 1, wherein the electrode is a probe.
スとする特許請求の範囲第（１）項記載のダイヤモンド
ライクカーボンの製造方法。5. The method for producing diamond-like carbon according to claim 1, wherein the reactive gas is a mixed gas of hydrogen and argon.
囲第（１）項記載のダイヤモンドライクカーボンの製造
方法。6. The method for producing diamond-like carbon according to claim 1, wherein the reactive gas is hydrogen gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060340A JPH0679963B2 (en) | 1985-03-25 | 1985-03-25 | Method for producing diamond-like carbon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060340A JPH0679963B2 (en) | 1985-03-25 | 1985-03-25 | Method for producing diamond-like carbon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61219709A JPS61219709A (en) | 1986-09-30 |
| JPH0679963B2 true JPH0679963B2 (en) | 1994-10-12 |
Family
ID=13139334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60060340A Expired - Fee Related JPH0679963B2 (en) | 1985-03-25 | 1985-03-25 | Method for producing diamond-like carbon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679963B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242159B2 (en) * | 1972-10-28 | 1977-10-22 | ||
| JPS57106513A (en) * | 1980-12-22 | 1982-07-02 | Nippon Telegr & Teleph Corp <Ntt> | Formation of carbon film |
| JPS5855319A (en) * | 1981-09-30 | 1983-04-01 | Nippon Telegr & Teleph Corp <Ntt> | Formation of diamondlike carbon film |
| JPS60145994A (en) * | 1984-01-06 | 1985-08-01 | テクニオン・リサ−チ・アンド・デベロツプメント・フアウンデ−シヨン・リミテツド | Formation of diamond-like carbon film on substrate |
| JPS60195094A (en) * | 1984-03-15 | 1985-10-03 | Agency Of Ind Science & Technol | Production of diamond thin film |
-
1985
- 1985-03-25 JP JP60060340A patent/JPH0679963B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61219709A (en) | 1986-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |