JPH0680198B2 - Post-treatment method for silver plated products - Google Patents
Post-treatment method for silver plated productsInfo
- Publication number
- JPH0680198B2 JPH0680198B2 JP59262295A JP26229584A JPH0680198B2 JP H0680198 B2 JPH0680198 B2 JP H0680198B2 JP 59262295 A JP59262295 A JP 59262295A JP 26229584 A JP26229584 A JP 26229584A JP H0680198 B2 JPH0680198 B2 JP H0680198B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- washing
- water
- silver plating
- plated product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052709 silver Inorganic materials 0.000 title claims description 40
- 239000004332 silver Substances 0.000 title claims description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 15
- 238000011282 treatment Methods 0.000 title claims description 8
- 238000007747 plating Methods 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 description 26
- 239000013522 chelant Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005868 electrolysis reaction Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- -1 silver ions Chemical class 0.000 description 2
- 239000008399 tap water Substances 0.000 description 2
- 235000020679 tap water Nutrition 0.000 description 2
- 241001206158 Blepsias cirrhosus Species 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007601 warm air drying Methods 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は銀めっき製品のめっき膜の耐熱性を向上させる
ための後処理方法に関する。The present invention relates to a post-treatment method for improving the heat resistance of a plated film of a silver-plated product.
従来、電気銀めっきを終了した後の銀めっき表面を洗
浄、清浄化する方法としては、 （１）銀めっき表面を水道水程度の純度の水で粗洗し、 （２）次いで、電導度が５〜50μs/cm程度の純水で洗浄
してから温風乾燥する。Conventionally, as a method of cleaning and cleaning the silver plating surface after finishing the electrosilver plating, (1) the silver plating surface is roughly washed with water having a purity of about tap water, and (2) the conductivity is then increased. Wash with pure water of about 5 to 50 μs / cm and dry with warm air.
方法が一般に行われている。The method is generally done.
しかしながら、このような方法を、特に最近IC,LSI等の
リードフレームの銀スポットめっき膜面を洗浄する方法
として用いる場合には次のよう欠点があり問題になって
いる。However, when such a method is used as a method for cleaning the silver spot plating film surface of a lead frame of IC, LSI, etc. recently, it has the following drawbacks and becomes a problem.
１）表面に付着している付着イオンを完全には除去でき
ない。1) The attached ions attached to the surface cannot be completely removed.
２）表面に付着残存している銀めっき添加剤である有機
物を完全には除去できない。2) The organic substance, which is the silver plating additive remaining on the surface, cannot be completely removed.
３）銀めっき膜と素材欠陥の間に微量包含されている銀
めっき液を溶出できない。3) The silver plating solution contained in a trace amount between the silver plating film and the material defect cannot be eluted.
４）完成品のめっき耐熱性が著しく低下する。4) The plating heat resistance of the finished product is significantly reduced.
５）このようにして得られた銀めっき製品を用いたIS,L
SI等の信頼性が低下する。5) IS, L using the silver-plated product thus obtained
The reliability of SI etc. decreases.
上記のような問題点が存在するのは、下記するような理
由にあると考えられる。It is considered that the above problems exist for the following reasons.
すなわち、前記の如き従来の洗浄では銀めっき物の表面
に残存するイオン性物質並びに有機物の影響により、銀
めっき膜がIC実装工程のダイボンディング、ワイヤボン
ディング等の加熱工程で加熱された時に腐食するもの
で、このことは実験の結果によっても明らかとなってい
る。これらの汚染物質は銀めっき膜の結晶粒界を通って
素地に浸入し、銀めっき膜を粗雑にすると共に素地をも
腐食し、遂には銀めっきが剥離する。また、銀めっき膜
にピンホールがある場合にはこの小孔を通って上記汚染
物質が浸入して直接に素地を腐食して銀めっきの表面に
素地の酸化物が浮上してくる。That is, in the conventional cleaning as described above, due to the influence of ionic substances and organic substances remaining on the surface of the silver-plated product, the silver-plated film is corroded when heated in the heating process such as die bonding and wire bonding in the IC mounting process. However, this is also clarified by the result of the experiment. These contaminants penetrate the base material through the grain boundaries of the silver plating film, roughen the silver plating film, corrode the base material, and finally the silver plating is peeled off. When the silver plating film has pinholes, the contaminants penetrate through the small holes and directly corrode the base material, so that the oxide of the base material floats on the surface of the silver plating.
また、このような直接的悪影響ばかりでなく、このよう
に表面清浄度のレベルの低いリードフレームを使用する
と、IC,LSIの実質的な信頼性を低下させる。特に、ワイ
ヤボンド線の腐食やパッケージングレジンとフレームの
密着が悪くなるため外気の侵入によりICそのものの回路
の信頼性を低下させる。In addition to such a direct adverse effect, use of a lead frame having such a low level of surface cleanliness reduces the substantial reliability of ICs and LSIs. In particular, the corrosion of the wire bond wire and the poor adhesion between the packaging resin and the frame deteriorate the reliability of the circuit of the IC itself due to the entry of outside air.
本発明の目的は上記の如き従来技術の欠点を解消させる
ため新規な銀めっき膜表面及び内部の清浄化を達成せし
めるための後処理方法を提供することにある。An object of the present invention is to provide a post-treatment method for attaining a novel cleaning of the surface and the inside of a silver plating film in order to solve the above-mentioned drawbacks of the prior art.
すなわち、本発明の要旨とするところは、次の工程を有
することを特徴とする銀めっき製品の後処理方法にあ
る。That is, the gist of the present invention resides in a post-treatment method for a silver-plated product, which comprises the following steps.
（ａ）銀めっき終了後、銀めっき製品を陰極としてアル
カリ性物質含有水溶液中で銀めっき品を陰極として電解
し、その表面の残留物を除去する。(A) After the silver plating is completed, the silver-plated product is used as a cathode and the silver-plated product is electrolyzed in an aqueous solution containing an alkaline substance as a cathode to remove the residue on the surface.
（ｂ）次いで、該銀めっき製品を電導度が300μs/cm以
下の純水で60℃〜95℃の温度で洗浄する。(B) Next, the silver-plated product is washed with pure water having an electric conductivity of 300 μs / cm or less at a temperature of 60 ° C. to 95 ° C.
（ｃ）次いで、該銀めっき製品を電導度が50μs/cm以下
の純水で常温にて洗浄する。(C) Next, the silver-plated product is washed at room temperature with pure water having an electric conductivity of 50 μs / cm or less.
（４）最後に、該銀めっき製品をエアーフィルターを通
した150℃〜250℃の熱風にて乾燥する。(4) Finally, the silver-plated product is dried with hot air at 150 ° C to 250 ° C that has passed through an air filter.
なお、上記工程は基本工程であって、例えば銀めっき製
品をアルカリ電解前後に純水（例えば５〜50μs/cm程
度）で室温下に処理する工程等を含ましめることができ
る。The above steps are basic steps, and may include, for example, a step of treating the silver-plated product with pure water (for example, about 5 to 50 μs / cm) at room temperature before and after alkaline electrolysis.
また、本発明でアルカリ電解に用いる水溶液としては、
1g/l〜30g/lのかせいソーダあるいは5g/l〜30g/lの炭酸
ソーダの単独あるいは両方を含む水溶液が用いるのがよ
い。Further, as the aqueous solution used for alkaline electrolysis in the present invention,
An aqueous solution containing 1 g / l to 30 g / l of caustic soda or 5 g / l to 30 g / l of sodium carbonate alone or both is preferably used.
一般に、銀めっき液中には、光沢剤及び銀イオンの素材
表面への電気化学的置換析出を防止するための置換防止
剤が多量添加されており、これらは、めっき時に銀めっ
きの膜表面に吸着して、結晶粒成長の均一化をはかり、
ち密な膜質を作る役目を果している。また、置換防止剤
は特に、銅系素材にキレート化合物の膜を作り、銀イオ
ンの銅表面への電気化学的析出を防止している。In general, a large amount of a brightening agent and a substitution preventing agent for preventing electrochemical displacement precipitation of silver ions on the material surface are added to the silver plating solution. These are added to the silver plating film surface during plating. By adsorbing, the grain growth is made uniform,
It plays the role of creating a dense film quality. In addition, the anti-displacement agent forms a chelate compound film on a copper-based material to prevent electrochemical deposition of silver ions on the copper surface.
これら有機添加剤は通常の仕上げ水洗工程では完全には
除去されず、銀めっき膜を大気中で加熱すると銀めっき
膜表面で炭化して黒色化する現象として観察される。ま
た、置換防止のキレート膜の部分的に厚く成長した部分
には電気銀めっきのピンホールを生じて微小穴５〜10μ
（直径）となる欠点を有している。この微小穴の構造は
XMA,AES,SEM分析等により第１図に示す如き構造である
ことがほぼ明らかとなった。It is observed that these organic additives are not completely removed in the usual finishing water washing step, and when the silver plating film is heated in the atmosphere, it carbonizes on the surface of the silver plating film to become black. In addition, electro-silver-plated pinholes were formed in the partially grown thick portion of the chelate film for displacement prevention, and micro holes 5-10 μm were formed.
(Diameter). The structure of these small holes is
From the XMA, AES, SEM analysis, etc., it became clear that the structure is as shown in FIG.
第１図は銀めっき時に生ずる上記の微小穴を示す拡大断
面図であって、一般にりん青銅、銅一鉄合金等の耐熱性
強化合金よりなる素材１の銅合金表面に局部的に厚く成
長した銅キレート膜３が生じ、その上に銀めっきが成長
しないために微小穴４ができる。この時銀めっき層２の
表面にも光沢剤の吸着層である銀キレート膜５が生じて
いる。FIG. 1 is an enlarged cross-sectional view showing the above-mentioned minute holes produced during silver plating, which locally grows thickly on the copper alloy surface of the material 1 which is generally made of a heat resistant strengthening alloy such as phosphor bronze or copper-iron alloy. Since the copper chelate film 3 is formed and the silver plating does not grow on the copper chelate film 3, minute holes 4 are formed. At this time, the silver chelate film 5, which is an adsorption layer for the brightening agent, is also formed on the surface of the silver plating layer 2.
発明者はアルコール洗浄を行なうと有機吸着物を完全に
除去できることを見出したが、この方法は種々な問題が
あるため実用化にいたらなかった。このため、本発明者
は別な検討を行なった結果アルカリ水溶液中で銀めっき
表面を陰極として電解すると、発生する水素ガスにより
表面吸着のキレート化合物層を除去できることを見出
し、実用化をはかった。発生する水素ガスは銀表面から
発生するために、銀めっき層表面の電気絶縁性のキレー
ト化合物膜は発生する水素ガスのエネルギーにより物理
的に、また水素ガスの還元作業により化学反応的に除去
される。The inventor has found that the organic adsorbate can be completely removed by washing with alcohol, but this method has not been put into practical use because of various problems. Therefore, as a result of another study, the present inventor has found that electrolysis using a silver-plated surface as a cathode in an alkaline aqueous solution can remove the chelate compound layer adsorbed on the surface by the generated hydrogen gas, and aimed for practical use. Since the generated hydrogen gas is generated from the silver surface, the electrically insulating chelate compound film on the surface of the silver plating layer is physically removed by the energy of the generated hydrogen gas and chemically removed by the hydrogen gas reduction operation. It
本発明において、このアルカリ電解の後に60〜95℃の湯
洗を行う理由は、特にピンホール中に含まれている銀め
っき液中のイオン性物質（塩類）を除去することにあ
る。この湯洗は電導度が300μs/cm以下の水を用いて行
うことが必要で、これ以上の高い電導度の水による湯洗
では良い結果が得られない。すなわち、純水の湯洗によ
りイオンを溶出させるのが目的である。湯洗によれば、
常温での水による洗浄と比較して温度が高い分だけ物質
溶解作用があり、したがって電解後の水による洗浄方法
にあっては湯洗を最初にもってくることにより洗浄効果
が増すことになる。In the present invention, the reason for washing with hot water at 60 to 95 ° C. after the alkaline electrolysis is to remove the ionic substances (salts) in the silver plating solution contained in the pinholes. This hot-water washing needs to be performed using water having an electric conductivity of 300 μs / cm or less, and good results cannot be obtained by washing with water having a higher electric conductivity. That is, the purpose is to elute the ions by washing with pure water. According to Yuwashi
As compared with washing with water at room temperature, there is a substance-dissolving action as much as the temperature is higher. Therefore, in the washing method with water after electrolysis, washing effect with hot water is increased first.
最後に150〜250℃の高温熱風で乾燥させる目的はピンホ
ール中に残留する水分を蒸発させるのが主であるため、
150℃以下の熱風では殆んど効果が無い。また、熱風は
空気を用いて行うために250℃以上では銅の酸化が生じ
るので、250℃以下であることが必要である。この場
合、できる限り250℃に近い熱風を作ることが望まし
く、銀めっき膜の大気中加熱性能（耐熱性）を向上させ
ることができる。これは、銀めっき膜は200℃以上の温
度で再結晶して銀めっきの微小ピンホールは銀の結晶の
再配列により封孔される性質を有しているためである。Finally, the purpose of drying with high temperature hot air of 150-250 ℃ is mainly to evaporate the water remaining in the pinhole,
Hot air below 150 ° C has almost no effect. Further, since hot air is performed using air, the oxidation of copper occurs at 250 ° C or higher, so it is necessary to be 250 ° C or lower. In this case, it is desirable to generate hot air as close to 250 ° C. as possible, and the heating performance (heat resistance) of the silver plating film in the atmosphere can be improved. This is because the silver plating film has a property of being recrystallized at a temperature of 200 ° C. or higher, and the fine pin holes of silver plating are sealed by rearrangement of silver crystals.
水の電導度は一般にその純度と反比例の関係（換言すれ
ば純度が増すと共に電気的抵抗が増大する）にあり、し
たがって、ここで例えば300μs/cm以下の電導度の純水
とは、そのレベルを最低限としたそれよりも純度の高い
水を意味することになる。The conductivity of water is generally inversely related to its purity (in other words, as the purity increases and the electrical resistance increases), pure water with a conductivity of 300 μs / cm or less, for example, is the level of water. It means water of higher purity than that with the minimum.
ICリードフレームに低シアン浴による高速銀めっき（高
速スポットめっき）を行った後に、次の後処理を施し
た。After performing high-speed silver plating (high-speed spot plating) in a low cyan bath on the IC lead frame, the following post-treatment was performed.
（１）回収水洗（２段）：循還水による銀めっき膜の粗
洗浄 （２）水洗:5〜50μs/cm程度の純水による表面洗浄 （３）アルカリ電解洗浄:NaOH30％及びNa2CO330％を含
む水溶液中でリードフレームを陰極とし、電流密度10A/
dm2常温で30秒間電解した。(1) Washing with recovered water (2 steps): Rough washing of silver plating film with recycled water (2) Washing with water: Surface washing with pure water of about 5 to 50 μs / cm (3) Alkaline electrolytic washing: NaOH 30% and Na 2 CO 3 Current density 10A /
electrolytically 30 seconds dm 2 normal temperature.
（４）回収水洗（１段）：循還水による粗洗浄 （５）水洗:5〜50μs/cm程度の純水による表面洗浄（室
温） （６）湯洗:5〜50μs/cm程度の純水による湯洗（温度は
95℃） （７）水洗:0.5〜５μs/cm程度の純水による最終水洗
（室温） （８）熱風乾燥：エアーフィルターを通した200℃の熱
風による表面乾燥比較のために、上記と同様な高速銀め
っきを行ったリードフレームを従来方法により、水道水
による粗洗、５〜50μs/cm程度の純水による水洗、と温
風乾燥よりなる後処理を施した。(4) Washing with recovered water (1st stage): Rough washing with recycled water (5) Washing with water: Surface washing with pure water of about 5 to 50 μs / cm (room temperature) (6) Washing with hot water: Pure of about 5 to 50 μs / cm Washing with water (temperature is
(95 ° C) (7) Washing with water: Final washing with pure water of about 0.5 to 5 µs / cm (room temperature) (8) Hot air drying: Surface drying with hot air at 200 ° C passed through an air filter. The lead frame plated with high-speed silver was subjected to post-treatments such as rough washing with tap water, washing with pure water at about 5 to 50 μs / cm, and warm air drying according to a conventional method.
上記の本発明によるリードフレームと従来方法によるリ
ードフレームとの銀めっき膜の耐熱性（大気中３分間）
を比較したところ、従来方法によるものは200℃で直径
５〜50μの微小黒点が生じ、400℃では直径50〜300μの
大型黒点となり、500℃ではこのような大型黒点の数が
非常に多くなったが、本発明方法によるものではいずれ
の温度でもこのような黒点は見られなかった。また、表
面イオン濃度は従来方法によったものでは100〜1000ng/
cm2であるのに対し、本発明方法によったものでは0.1〜
1ng/cm2に過ぎなかった。Heat resistance of the silver plating film of the lead frame according to the present invention and the lead frame according to the conventional method (3 minutes in the atmosphere)
When compared with the conventional method, small black spots with a diameter of 5 to 50μ occur at 200 ° C, large black spots with a diameter of 50 to 300μ at 400 ° C, and the number of such large black spots increases significantly at 500 ° C. However, according to the method of the present invention, such black spots were not observed at any temperature. The surface ion concentration is 100 to 1000 ng / by the conventional method.
Whereas cm 2 is 0.1 to 0.1 according to the method of the present invention.
It was only 1 ng / cm 2 .
本発明によるときは、従来の後処理方法（純水洗＋温風
乾燥）による場合と比較して、電解洗浄と純水による湯
洗を巧みに加えることにより特にイオン性物質と有機物
に対する洗浄効果を増大させて銀めっき膜の耐熱性を著
しく向上させ、また銀めっき膜表面の付着イオン濃度を
著しく低下させることができ、従って、本発明を例えば
ICやLSI用のリードフレームに適用する場合には、ICやL
SIの実装信頼性を著しく向上させることができる。According to the present invention, compared with the conventional post-treatment method (washing with pure water + drying with warm air), electrolytic cleaning and hot water washing with pure water are skillfully added to achieve a cleaning effect particularly on ionic substances and organic substances. It is possible to significantly increase the heat resistance of the silver plating film and significantly reduce the concentration of attached ions on the surface of the silver plating film, and therefore the present invention can be applied to, for example,
When applied to a lead frame for IC or LSI, IC or L
SI mounting reliability can be significantly improved.
第１図は銅合金の銀めっき膜に生じた微小穴の拡大断面
図である。 1:銅合金素材,2:銀めっき膜,3:銅キレート膜層,4:ピン
ホール,5:銀キレート膜層FIG. 1 is an enlarged cross-sectional view of minute holes formed in a silver plating film of a copper alloy. 1: Copper alloy material, 2: Silver plating film, 3: Copper chelate film layer, 4: Pinhole, 5: Silver chelate film layer
Claims (2)
き製品の後処理方法 （ａ）銀めっき終了後アルカリ性物質含有水溶液中で銀
めっき製品を陰極として電解する。 （ｂ）次いで、該銀めっき製品を電導度300μs/cm以下
の純水で60℃〜95℃の温度で洗浄する。 （ｃ）次いで、該銀めっき製品を電導度50μs/cm以下の
純水で常温にて洗浄する。 （ｄ）最後にエアーフィルターを通した150℃〜250℃の
熱風で乾燥する。1. A post-treatment method for a silver-plated product, which comprises the following steps: (a) After completion of silver plating, the silver-plated product is electrolyzed in an aqueous solution containing an alkaline substance as a cathode. (B) Next, the silver-plated product is washed with pure water having an electric conductivity of 300 μs / cm or less at a temperature of 60 ° C. to 95 ° C. (C) Next, the silver-plated product is washed at room temperature with pure water having an electric conductivity of 50 μs / cm or less. (D) Finally, dry with hot air of 150 ° C to 250 ° C that has passed through an air filter.
ダ１〜30g/lあるいは炭酸ソーダ５〜30g/lの単独あるい
は両方を含む水溶液である特許請求の範囲第１項に記載
の銀めっき製品の後処理方法。2. The silver-plated product according to claim 1, wherein the alkaline substance-containing aqueous solution is an aqueous solution containing 1 to 30 g / l of caustic soda and 5 to 30 g / l of sodium carbonate alone or both. Processing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59262295A JPH0680198B2 (en) | 1984-12-12 | 1984-12-12 | Post-treatment method for silver plated products |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59262295A JPH0680198B2 (en) | 1984-12-12 | 1984-12-12 | Post-treatment method for silver plated products |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61139695A JPS61139695A (en) | 1986-06-26 |
| JPH0680198B2 true JPH0680198B2 (en) | 1994-10-12 |
Family
ID=17373796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59262295A Expired - Lifetime JPH0680198B2 (en) | 1984-12-12 | 1984-12-12 | Post-treatment method for silver plated products |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680198B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124530A (en) * | 1990-03-22 | 1992-06-23 | Inco Alloys International, Inc. | Stable low fume stainless steel welding electrode |
| JPH05156302A (en) * | 1991-12-03 | 1993-06-22 | Fukuda Metal Foil & Powder Co Ltd | Method for producing high-purity silver powder |
| JP4627848B2 (en) * | 2000-08-23 | 2011-02-09 | 荏原ユージライト株式会社 | Plating method and plated product |
| WO2009057359A1 (en) * | 2007-10-31 | 2009-05-07 | Dainippon Screen Mfg. Co., Ltd. | Additive removal method, additive removal device, and plating system |
| FR3063293B1 (en) * | 2017-02-27 | 2021-05-21 | Diehl Power Electronic Sas | PROCESS FOR TREATING A METAL SURFACE AND TAPE OBTAINED |
| CN113445091A (en) * | 2021-05-24 | 2021-09-28 | 佛山市英格尔科技有限公司 | Preparation process of copper strip for temperature controller production |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698484A (en) * | 1980-01-10 | 1981-08-07 | Hamasawa Kogyo:Kk | Method of preventing silver discoloring |
-
1984
- 1984-12-12 JP JP59262295A patent/JPH0680198B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| 日本めっき技術研究会編「現場技術者のための実用めっき」（昭５３−９−２５）槇書店Ｐ．４２５−４２７ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61139695A (en) | 1986-06-26 |
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