JPH0682612B2 - Thin film forming method using high intensity pulsed ion beam - Google Patents
Thin film forming method using high intensity pulsed ion beamInfo
- Publication number
- JPH0682612B2 JPH0682612B2 JP62022088A JP2208887A JPH0682612B2 JP H0682612 B2 JPH0682612 B2 JP H0682612B2 JP 62022088 A JP62022088 A JP 62022088A JP 2208887 A JP2208887 A JP 2208887A JP H0682612 B2 JPH0682612 B2 JP H0682612B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film forming
- ion beam
- forming material
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 86
- 238000010884 ion-beam technique Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 28
- 239000011163 secondary particle Substances 0.000 claims description 13
- 239000005083 Zinc sulfide Substances 0.000 description 17
- 229910052984 zinc sulfide Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜形成方法に関するものである。TECHNICAL FIELD The present invention relates to a thin film forming method.
従来、薄膜の形成には真空蒸着、スパッタリング、MBE
法等が知られており、たとえばIII−Ｖ族やII−VI族の
半導体薄膜その他の薄膜形成に用いられている。Conventionally, vacuum evaporation, sputtering, MBE for thin film formation
Methods and the like are known and used for forming semiconductor thin films such as III-V and II-VI semiconductor thin films.
これら従来方法による薄膜の形成速度は一般に真空蒸着
によるものが0.5〜５μm/分程度、スパッタリングによ
るものが0.02〜0.2μm/分程度、またMBE法によるものが
0.005〜0.2μm/分程度等となっており、薄膜形成に時間
を要するものであった。The thin film formation rate by these conventional methods is generally about 0.5 to 5 μm / min by vacuum deposition, about 0.02 to 0.2 μm / min by sputtering, and by the MBE method.
It was about 0.005-0.2 μm / min, which required a long time to form a thin film.
本発明は、形成する薄膜、たとえばZnS（硫化亜鉛）等
の化合物半導体やＣ（炭素）等の材料に大強度パルスイ
オンビームを照射してプラズマを有する二次粒子線を発
生させ、これをたとえばシリコン基板等の薄膜形成面に
照射させて薄膜を形成するという新規な薄膜形成方法を
提供するものである。The present invention irradiates a thin film to be formed, for example, a compound semiconductor such as ZnS (zinc sulfide) or a material such as C (carbon) with a high-intensity pulsed ion beam to generate a secondary particle beam having plasma. It is intended to provide a novel thin film forming method of forming a thin film by irradiating a thin film forming surface such as a silicon substrate.
第１図は本発明の一実施例を示すもので、本発明者らが
行った実験の概略図である。FIG. 1 shows an embodiment of the present invention and is a schematic diagram of an experiment conducted by the present inventors.
図中、１はパルス電源、２はイオンビーム発生ダイオー
ド、３は薄膜形成材料、４は薄膜形成基板である。即
ち、パルス電源１により高電圧パルスを発生し、この高
電圧によりイオンビーム発生ダイオード２から発射する
イオンビームＡを薄膜形成材料３、この場合にはZnS塊
に収束照射し、これにより発生する二次粒子線Ｂ（主に
プラズマとなったZnとＳ）を薄膜形成基板４の形成面に
照射させてZnS薄膜を形成しようというものである。In the figure, 1 is a pulse power source, 2 is an ion beam generating diode, 3 is a thin film forming material, and 4 is a thin film forming substrate. That is, a high voltage pulse is generated by the pulse power supply 1, and the high voltage causes the ion beam A emitted from the ion beam generating diode 2 to converge and irradiate the thin film forming material 3, in this case, the ZnS lump, to generate The secondary particle beam B (mainly Zn and S that became plasma) is irradiated onto the formation surface of the thin film formation substrate 4 to form a ZnS thin film.
第２図はパルス電源１の構成を示す回路図である。FIG. 2 is a circuit diagram showing the configuration of the pulse power supply 1.
パルス電源１は、直流電圧供給端子11に多数の抵抗12を
直列接続し、各抵抗12の接続点にコンデンサ13の一端を
接続し、隣るコンデンサ13の他端をそれぞれ抵抗14にて
接続して並列に充電されるようにするとともに、放電時
には直列放電されるようにギャップスイッチ15を接続し
て、直流電圧供給端子11に最も近いコンデンサ13の負端
をアースしたマルクスジェネレータ100にて高電圧を発
生するとともに、この高電圧をビーム発生ダイオード２
に適した波形とすると波形形成線路101から構成されて
いる。なお、16はギャップスイッチ15とタイミングを合
わせてONする放電ギャップスイッチである。In the pulse power supply 1, a large number of resistors 12 are connected in series to a DC voltage supply terminal 11, one end of a capacitor 13 is connected to the connection point of each resistor 12, and the other end of an adjacent capacitor 13 is connected with a resistor 14 respectively. So that they can be charged in parallel in parallel, and the gap switch 15 is connected so that they are discharged in series during discharge, and the negative end of the capacitor 13 closest to the DC voltage supply terminal 11 is grounded by the Marx generator 100 at a high voltage. This high voltage is generated by the beam generating diode 2
If the waveform is suitable for, it is composed of the waveform forming line 101. Reference numeral 16 is a discharge gap switch that is turned on in synchronization with the gap switch 15.
第３図はイオンビーム発生ダイオード２の構成を示す平
断面図である。FIG. 3 is a plan sectional view showing the structure of the ion beam generating diode 2.
200はアノードであって、上記パルス電源１で発生され
た高電圧が印加されるものであり、その一側面にはビー
ムＡをある一点に向けて収束させるべく断面弧状の凹部
21が設けられており、この凹部21にイオン源たる絶縁体
のフラッシュボード22としてこの場合ポリエチレン板を
貼着している。Reference numeral 200 denotes an anode, to which a high voltage generated by the pulse power supply 1 is applied, and one side surface of which is a concave portion having an arc-shaped cross section for converging the beam A toward a certain point.
21 is provided, and in this case, a polyethylene plate is adhered to this recess 21 as an insulator flash board 22 which is an ion source.
201はカソードであって、アースされた金属導体板23に
縦長の抜穴部24を設けたものである。Reference numeral 201 denotes a cathode, which is formed by providing a grounded metal conductor plate 23 with a vertically long hole 24.
25は磁界を示すものであって、この磁界25はアノード20
0とカソード201の距離方向と垂直方向に発生されてお
り、この磁界25によって、カソード201からアノード200
に向かう電子26が細矢印にて示すように再びカソード20
1に戻るようにしている。なお、イオン27はその質量が
大きいため、磁界25の影響をほとんど受けずにビームＡ
となってカソード201に向かう。このイオンビームＡの
一部はカソード201に衝突して吸収されるが、他の大部
分はカソード201の抜穴部24を通り抜けるもので、この
通り抜けたイオンビームＡを薄膜形成材料３に照射する
ものである。なお、本実験ではポリエチレン板を用いて
いるからアノード200から放出されるイオンは水素イオ
ンと炭素イオンである。Reference numeral 25 denotes a magnetic field, and this magnetic field 25 is the anode 20.
It is generated in the direction perpendicular to the distance between 0 and the cathode 201, and this magnetic field 25 causes the cathode 201 to the anode 200.
Electrons 26 bound for cathode 20 again as indicated by the thin arrow.
I am trying to go back to 1. Since the ion 27 has a large mass, it is almost unaffected by the magnetic field 25.
And goes to the cathode 201. A part of this ion beam A collides with the cathode 201 and is absorbed, but most of the other part passes through the hole 24 of the cathode 201, and the thin film forming material 3 is irradiated with this ion beam A that has passed through. It is a thing. In this experiment, since a polyethylene plate is used, the ions released from the anode 200 are hydrogen ions and carbon ions.
第４図は薄膜形成材料３と薄膜形成基板４を示すもの
で、第５図はそれをさらに具体的に示した側面図であ
る。薄膜形成材料３は上記のようにZnS塊を用いてお
り、薄膜形成基板４はシリコン板を用いた。FIG. 4 shows the thin film forming material 3 and the thin film forming substrate 4, and FIG. 5 is a side view showing it more specifically. As described above, the thin film forming material 3 uses the ZnS lump, and the thin film forming substrate 4 uses the silicon plate.
イオンビームＡが照射された薄膜形成材料３は、上記イ
オンビームＡのパワーが後述するように強度であるため
にその表面が瞬間的にプラズマ化され、二次粒子線Ｂの
主な構成要素となる。この二次粒子線Ｂの一部は薄膜形
成基板４の薄膜形成面41に照射してZnS薄膜を形成する
ものである。The surface of the thin film forming material 3 irradiated with the ion beam A is momentarily turned into plasma because the power of the ion beam A is strong as described later, and the thin film forming material 3 becomes a main component of the secondary particle beam B. Become. A part of the secondary particle beam B irradiates the thin film forming surface 41 of the thin film forming substrate 4 to form a ZnS thin film.
なお、二次粒子線Ｂは他にZnS蒸気やスパッタ粒子、電
磁波、二次電子、散乱された一次粒子も含んでいるもの
と考えられるが、主にZnとＳのプラズマで構成されると
考えられる。The secondary particle beam B is considered to include ZnS vapor, sputtered particles, electromagnetic waves, secondary electrons, and scattered primary particles, but it is considered to be mainly composed of Zn and S plasma. To be
実験では、箱体42内に支持部43を立設し、この支持部43
に薄膜形成材料たるZnS塊を置き、箱体42にビーム導入
穴44を穿設し、箱体42内に薄膜形成基板４を保持するホ
ルダ45を設けた。このとき、ZnS塊と薄膜形成面41の距
離は最も近いところで2cm、最も遠いところで4cmとし
た。一方、箱体42の上記ビーム導入穴44対向面の外側に
は、上記ビーム発生ダイオード２からの距離を調整する
ための調整杆46を取り付けてなる装置を用い、イオンビ
ーム発生ダイオード２のアノード200とZnS塊との距離は
15cmとした。また、ビーム発生ダイオード２及び箱体42
は低気圧（約10-4Torr）層内に配置して実験を行った。In the experiment, a support part 43 is erected inside the box 42, and this support part 43
A ZnS lump, which is a thin film forming material, was placed in the box, a beam introducing hole 44 was bored in the box 42, and a holder 45 for holding the thin film forming substrate 4 was provided in the box 42. At this time, the distance between the ZnS lump and the thin film forming surface 41 was 2 cm at the closest point and 4 cm at the farthest point. On the other hand, an apparatus having an adjusting rod 46 for adjusting the distance from the beam generating diode 2 is used outside the surface of the box body 42 facing the beam introducing hole 44, and the anode 200 of the ion beam generating diode 2 is used. And the distance between ZnS mass
It was set to 15 cm. In addition, the beam generating diode 2 and the box 42
Was placed in the low pressure (about 10 -4 Torr) layer for the experiment.
第６図及び第７図は、ビーム発生ダイオード２のアノー
ド200に印加された電圧及びイオンビームＡの電流密度
をそれぞれ示すもので、実験時の典型的なグラフであ
る。FIGS. 6 and 7 show the voltage applied to the anode 200 of the beam generating diode 2 and the current density of the ion beam A, respectively, and are typical graphs during the experiment.
これらから、薄膜形成材料４には約5GW/cm2（約1MV×約
5KA/cm2）の電力密度を持つイオンビームが、第７図よ
りわかるように、１回の照射で約80nsの時間だけ照射さ
れたことがわかる。従って、１回の照射で約420J/cm2の
エネルギーが薄膜形成材料３に加えられたことになり、
これは薄膜形成材料３からプラズマを放出させるに充分
なエネルギーである。From these, the thin film forming material 4 has about 5 GW / cm 2 (about 1 MV x about
As can be seen from FIG. 7, it can be seen that the ion beam having a power density of 5 KA / cm 2 was irradiated for about 80 ns in one irradiation. Therefore, the energy of about 420 J / cm 2 was applied to the thin film forming material 3 by one irradiation,
This is sufficient energy to emit plasma from the thin film forming material 3.
なお、イオンビームＡが発射してから薄膜形成材料３た
るZnS塊に照射するまでの時間が約15ns（ナノ秒）、ZnS
塊表面から薄膜形成面41に届くまでの時間は、プラズマ
が熱エネルギーのみによる運動をするとして約15μｓ
（マイクロ秒）である。It should be noted that the time from the irradiation of the ion beam A to the irradiation of the ZnS lump, which is the thin film forming material 3, is about 15 ns (nanosecond).
The time it takes for the plasma to reach the thin film forming surface 41 from the lump surface is about 15 μs if the plasma moves only by thermal energy.
(Microseconds).
第８図は本実験に用いた薄膜形成面41のＸ線マイクロア
ナライザによる分析結果を示すグラフであり、第９図は
薄膜形成後の薄膜形成面41のＸ線マイクロアナライザに
よる分析結果を示すグラフである。FIG. 8 is a graph showing an analysis result by the X-ray microanalyzer of the thin film formation surface 41 used in this experiment, and FIG. 9 is a graph showing an analysis result by the X-ray microanalyzer of the thin film formation surface 41 after the thin film formation. Is.
なお、本実験ではイオンビームＡを薄膜形成材料３に３
度照射し、従って薄膜形成面41には３度の二次粒子線の
照射による薄膜が形成されている。このとき、数度の実
験の典型的な値として、薄膜の厚さは約0.11μｍであっ
た。In this experiment, the ion beam A was applied to the thin film forming material 3
Therefore, a thin film is formed on the thin film formation surface 41 by the secondary particle beam irradiation of 3 times. At this time, the thickness of the thin film was about 0.11 μm as a typical value of several experiments.
第８図のように、薄膜形成前にはシリコンのピークのみ
が見られるのに対し、薄膜形成後では第９図にように、
ａ〜ｅの５つのピークがあるが、a,d,eはZnが、ｃはＳ
が薄膜中に存在していることを示しており、ZnとＳを含
む薄膜が形成されたことがわかる。一番大きなピークｂ
はシリコンを示すもので、本実験では薄膜形成基板４に
シリコン板を用いたことにより現れている。As shown in FIG. 8, only the peak of silicon is seen before the thin film is formed, while after the thin film is formed, as shown in FIG.
There are 5 peaks of a to e, a, d and e are Zn and c is S
Indicates that a thin film containing Zn and S was formed. The biggest peak b
Indicates silicon, which is shown in this experiment by using a silicon plate for the thin film formation substrate 4.
なお、本実験結果である第９図からは、ZnSの単結晶薄
膜が形成されたか否かは判断できないが、少なくともZn
とＳは薄膜形成面41に付着しており、 またZnS塊からの二次粒子線Ｂのエネルギーが高いため
にZnとＳの薄膜形成面41上での表面泳動のためのエネル
ギーは充分であるため、ZnSの単結晶薄膜を本実施例の
装置にて形成できる可能性は高い。From FIG. 9 which is the result of this experiment, it cannot be determined whether or not a single crystal thin film of ZnS was formed, but at least Zn
And S are attached to the thin film forming surface 41, and since the energy of the secondary particle beam B from the ZnS mass is high, the energy for surface migration of Zn and S on the thin film forming surface 41 is sufficient. Therefore, it is highly possible that a ZnS single crystal thin film can be formed by the apparatus of this embodiment.
以上の本実施例によれば、大強度パルスイオンビームを
用いているから、従来に比して高い速度で薄膜を形成す
ることが可能となる。上記のように、イオンビームＡの
発射から二次粒子線Ｂのプラズマが薄膜形成面41に届く
までの時間は約15マイクロ秒であり、この時間に注目す
れば３度の照射で約0.11μｍの膜厚の薄膜ができること
から、約145mm/分という、極めて高速の薄膜形成となっ
ている。According to the present embodiment described above, since the high-intensity pulsed ion beam is used, it is possible to form a thin film at a higher speed than in the past. As described above, the time from the emission of the ion beam A to the plasma of the secondary particle beam B reaching the thin film forming surface 41 is about 15 microseconds. If attention is paid to this time, it is about 0.11 μm with three irradiations. Since a thin film with a film thickness of 1 is produced, the film is formed at an extremely high speed of about 145 mm / min.
実際にはマルクスジェネレータ100の充電時間を要する
が、これは例えばパルス電源にステップアップトランス
を用いて短時間に高電圧を発生すればより高電圧発生ま
での時間を短縮可能であり、さらに薄膜形成材料から発
生する二次粒子線のより多くが薄膜形成面に到達するよ
う改良すれば、形成速度をより高くすることが可能であ
る。また、大強度パルスイオンビームを用いているから
薄膜形成材料たるZnS塊の表面付近の浅い部分のみにエ
ネルギーを注入でき、注入エネルギー密度が高くなって
二次粒子線のエネルギーがより高くなり、品質の良好な
薄膜を形成することが可能となる。Actually, it takes time to charge the Marx generator 100. However, if a high voltage is generated in a short time by using a step-up transformer for the pulse power supply, for example, it is possible to shorten the time until the high voltage is generated. If the secondary particle beam generated from the material is improved so that more secondary particle beams reach the thin film formation surface, the formation rate can be increased. Also, since a high-intensity pulsed ion beam is used, energy can be injected only into the shallow part near the surface of the ZnS lump, which is the thin film forming material, and the injection energy density becomes higher, and the energy of the secondary particle beam becomes higher. It becomes possible to form a good thin film of
上記実施例では薄膜形成材料にZnS塊を、薄膜形成面は
薄膜形成基板たるシリコン板の一面をそれぞれ用いた
が、薄膜形成材料は導体材料，半導体材料，絶縁体材料
の別を問わず形成したい薄膜の材料を用いることがで
き、薄膜形成面もたとえばガラス板や平面でないもの
等、薄膜を形成したいものを任意に選択可能である。従
って上記したZnS薄膜を形成するためのみならず、たと
えばＣ（炭素）薄膜や金属薄膜、絶縁体薄膜等の異なる
薄膜を得るにも本発明の適用により同じ方法による薄膜
形成ができるとともに短時間で済むものである。In the above embodiment, the ZnS lump was used as the thin film forming material and the one surface of the silicon plate as the thin film forming substrate was used as the thin film forming surface. However, the thin film forming material may be formed of any of conductor material, semiconductor material and insulator material. A thin film material can be used, and the thin film formation surface can be arbitrarily selected such as a glass plate or a non-planar surface on which a thin film is to be formed. Therefore, not only for forming the ZnS thin film described above, but also for obtaining different thin films such as C (carbon) thin film, metal thin film, and insulator thin film, the thin film can be formed by the same method by applying the present invention and in a short time. It's done.
また、イオンビームは上記実施例に示したような軽イオ
ンのビームでなくともよく重イオンビームを用いても同
様の結果が得られ、さらにはパルス電源として例えばス
テップアップトランスを用いる等、イオンビームを得る
ための手段は任意である。Further, the ion beam does not have to be a light ion beam as shown in the above embodiment, and a similar result can be obtained by using a heavy ion beam. Furthermore, for example, a step-up transformer is used as a pulse power source. The means for obtaining is arbitrary.
なお、本発明における大強度パルスイオンビームとは、
少なくとも固体の薄膜形成材料に照射して、該薄膜形成
材料表面にプラズマを発生させることができる程度の強
度のパルスイオンビームのことである。The high intensity pulsed ion beam in the present invention means
It is a pulsed ion beam having an intensity that can irradiate at least a solid thin film forming material to generate plasma on the surface of the thin film forming material.
本発明によれば、導体，半導体，絶縁体等、種々の異な
る薄膜をイオンビームを用いて形成することができると
ともに、高速度で薄膜の形成が可能となるものである。According to the present invention, various thin films such as conductors, semiconductors, and insulators can be formed by using an ion beam, and the thin films can be formed at high speed.
第１図は本発明の一実施例を示す構成図、第２図乃至第
５図はそれぞれ第１図中の各構成要素を詳しく説明する
もので第２図はパルス電源を示す回路図、第３図はイオ
ンビーム発生ダイオードを示す断面図、第４図及び第５
図は薄膜形成材料と薄膜形成面を含む部分の略斜視図及
び断面図、第６図は上記第１図のイオンビーム発生ダイ
オードに印加された電圧を示すグラフで第７図は第１図
のイオンビーム発生ダイオードから発射されたイオンビ
ームの電流密度を示すグラフ、第８図は薄膜作成前の薄
膜形成面のＸ線マイクロアナライザによる分析結果を示
すグラフで第９図は薄膜形成後の同分析結果を示すグラ
フである。 １……パルス電源 ２……イオンビーム発生ダイオード ３……薄膜形成材料 ４……薄膜形成基板 41……薄膜形成面 Ａ……イオンビーム Ｂ……二次粒子線FIG. 1 is a block diagram showing an embodiment of the present invention, FIGS. 2 to 5 are detailed explanations of the respective constituent elements in FIG. 1, and FIG. 2 is a circuit diagram showing a pulse power supply. FIG. 3 is a sectional view showing an ion beam generating diode, FIG. 4 and FIG.
FIG. 7 is a schematic perspective view and a cross-sectional view of a portion including a thin film forming material and a thin film forming surface. FIG. 6 is a graph showing a voltage applied to the ion beam generating diode of FIG. 1 and FIG. 7 is a graph of FIG. A graph showing the current density of the ion beam emitted from the ion beam generating diode, FIG. 8 is a graph showing the analysis result by the X-ray microanalyzer of the thin film formation surface before thin film formation, and FIG. 9 is the same analysis after thin film formation. It is a graph which shows a result. 1 ... Pulse power supply 2 ... Ion beam generating diode 3 ... Thin film forming material 4 ... Thin film forming substrate 41 ... Thin film forming surface A ... Ion beam B ... Secondary particle beam
───────────────────────────────────────────────────── フロントページの続き (72)発明者 霜鳥 裕 新潟県長岡市東蔵王２丁目２番34号 日本 精機株式会社内 (72)発明者 太田 範雄 新潟県長岡市東蔵王２丁目２番34号 日本 精機株式会社内 審査官 近藤 幸浩 (56)参考文献 特開 昭54−40073（ＪＰ，Ａ) 特開 昭62−177925（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yu Shimotori 2-32, Higashi Zao, Nagaoka City, Niigata Japan Seiki Co., Ltd. (72) Inventor Norio Ota 2-32, Higashi Zao, Nagaoka City, Niigata Japan Seiki In-house Examiner Yukihiro Kondo (56) References JP-A-54-40073 (JP, A) JP-A-62-177925 (JP, A)
Claims (1)
を照射して上記薄膜形成材料表面にプラズマを発生さ
せ、少なくとも該プラズマを成分に有する二次粒子線を
薄膜形成面に照射させて薄膜を形成することを特徴とす
る大強度パルスイオンビームを用いた薄膜形成方法。1. A thin film forming material is irradiated with a high-intensity pulsed ion beam to generate plasma on the surface of the thin film forming material, and a secondary particle beam containing at least the plasma as a component is irradiated on the thin film forming surface to form a thin film. A method for forming a thin film using a high-intensity pulsed ion beam, which is characterized by forming the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022088A JPH0682612B2 (en) | 1987-02-02 | 1987-02-02 | Thin film forming method using high intensity pulsed ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62022088A JPH0682612B2 (en) | 1987-02-02 | 1987-02-02 | Thin film forming method using high intensity pulsed ion beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63190325A JPS63190325A (en) | 1988-08-05 |
| JPH0682612B2 true JPH0682612B2 (en) | 1994-10-19 |
Family
ID=12073118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62022088A Expired - Lifetime JPH0682612B2 (en) | 1987-02-02 | 1987-02-02 | Thin film forming method using high intensity pulsed ion beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682612B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4729191B2 (en) * | 2001-04-06 | 2011-07-20 | 八井 浄 | Method for producing polycrystalline silicon thin film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440073A (en) * | 1977-09-05 | 1979-03-28 | Matsushita Electric Ind Co Ltd | Film forming method |
| JPH088234B2 (en) * | 1986-01-31 | 1996-01-29 | 株式会社日立製作所 | Surface treatment method |
-
1987
- 1987-02-02 JP JP62022088A patent/JPH0682612B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63190325A (en) | 1988-08-05 |
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