JPH0682622B2 - Method for forming gallium arsenide thin film - Google Patents
Method for forming gallium arsenide thin filmInfo
- Publication number
- JPH0682622B2 JPH0682622B2 JP17342885A JP17342885A JPH0682622B2 JP H0682622 B2 JPH0682622 B2 JP H0682622B2 JP 17342885 A JP17342885 A JP 17342885A JP 17342885 A JP17342885 A JP 17342885A JP H0682622 B2 JPH0682622 B2 JP H0682622B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- electron beam
- gaas
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 28
- 238000010894 electron beam technology Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000000470 constituent Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009283 thermal hydrolysis Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は基本上にGaAs薄膜パターンを形成する薄膜形成
方法に関する。The present invention relates to a thin film forming method for basically forming a GaAs thin film pattern.
従来より基板上に単結晶半導体や絶縁膜を成長させる方
法として気相中の熱分解、加水分解または酸化などの化
学反応を用いたCVD法が知られている。この方法は基板
表面に一括成長させる場合や基板の必要な部分にのみ選
択的に成長させる場合（マスクエピタキシヤル）があ
る。GaAsを原料とした薄膜形成には熱分解法による気相
エピタキシャル（MOCVD）法が用いられている。Conventionally, as a method for growing a single crystal semiconductor or an insulating film on a substrate, a CVD method using a chemical reaction such as thermal decomposition, hydrolysis or oxidation in a vapor phase is known. In this method, there is a case where the surface is collectively grown on the substrate surface or a case where the film is selectively grown only on a necessary portion of the substrate (mask epitaxy). A vapor phase epitaxial (MOCVD) method by a thermal decomposition method is used for forming a thin film using GaAs as a raw material.
ところで、MOCVD法によるときには熱分解法によるた
め、500℃以上の高温が必要であり、薄膜の成長速度、
膜質を制御することはむずかしい。また、基板表面の必
要部分にのみ選択的に成長させるには当然マスクパター
ンの形成工程が必要となる。By the way, when the MOCVD method is used, a high temperature of 500 ° C. or higher is required because it is a thermal decomposition method.
It is difficult to control the film quality. In addition, a mask pattern forming step is naturally required in order to selectively grow only the necessary portion of the substrate surface.
本発明の目的はマスクを必要とせず、電子ビームを用い
て高純度、高精度の微細なGaAs薄膜パターンを簡単に形
成することにある。An object of the present invention is to easily form a fine GaAs thin film pattern of high purity and high precision by using an electron beam without using a mask.
〔問題点を解決するための手段〕 本発明のガリウム砒素薄膜形成方法は、ガリウム（Ga）
を構成元素として含んだガスと砒素（As）を構成元素と
して含んだガスとを基板上に供給し、基板上に吸着層を
形成し、基板の所望の部分に電子ビームを照射して、電
子ビーム励起反応により吸着層を揮発性材料と不揮発性
材料に分解し、ガリウム砒素（GaAs）を基板上に堆積し
てパターニングすることを特徴としている。[Means for Solving Problems] The gallium arsenide thin film forming method of the present invention is
Gas containing arsenic as a constituent element and gas containing arsenic (As) as a constituent element are supplied onto the substrate to form an adsorption layer on the substrate, and a desired portion of the substrate is irradiated with an electron beam to emit electrons. It is characterized in that the adsorption layer is decomposed into a volatile material and a non-volatile material by a beam excitation reaction, and gallium arsenide (GaAs) is deposited on the substrate and patterned.
次に、本発明の原理について第１図を用いて説明する。 Next, the principle of the present invention will be described with reference to FIG.
被堆積基板11を真空中に置き、Gaを含んだガス12とAsを
含んだガス14とを被堆積基板11に吹きつける。その結
果、Gaを含んだガス12の分子は被堆積基板11に吸着し、
Gaを含んだ吸着分子13となる。また、Asを含んだガス14
の分子も被堆積基板に吸着し、Asを含んだ吸着分子15と
なる。この基板11の表面に電子ビーム18を照射すると、
照射された部分の雰囲気ガスの吸着分子13,15が電子ビ
ーム18のエネルギーにより解離する。その結果、吸着分
子13に含まれるGaと吸着分子14に含まれるAsとが結合
し、被堆積基板11上にGaAs16が析出する。一方、分解に
より生成した揮発性材料分子17は排出される。以上の様
な原理により被堆積基板11表面上に照射した電子ビーム
照射面にGaAs16を析出させることができる。The deposition target substrate 11 is placed in a vacuum, and a gas 12 containing Ga and a gas 14 containing As are sprayed onto the deposition target substrate 11. As a result, the molecules of the gas 12 containing Ga are adsorbed on the deposition target substrate 11,
It becomes the adsorbed molecule 13 containing Ga. In addition, gas containing As 14
Molecules are also adsorbed on the substrate to be deposited and become adsorbed molecules 15 containing As. When the surface of the substrate 11 is irradiated with the electron beam 18,
The adsorbed molecules 13 and 15 of the atmosphere gas in the irradiated portion are dissociated by the energy of the electron beam 18. As a result, Ga contained in the adsorbed molecules 13 and As contained in the adsorbed molecules 14 are bonded to each other, so that GaAs 16 is deposited on the deposition target substrate 11. On the other hand, the volatile material molecules 17 generated by the decomposition are discharged. Based on the above principle, GaAs 16 can be deposited on the electron beam irradiation surface irradiated on the surface of the deposition target substrate 11.
以下、本発明の実施例について図面を参照して説明す
る。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第２図は本発明のGaAs薄膜形成方法の一実施例を説明す
るための図であり、GaAs薄膜形成方法を実施する電子ビ
ームデポジシヨン装置の構成図である。本装置は電子ビ
ーム照射系209、試料室207及びGaを構成元素として含ん
だ雰囲気ガス材料収納室201、Asを構成元素として含ん
だ雰囲気ガス材料収納室202とから構成されている。本
実施例においてはGaを構成元素として含む雰囲気ガス材
料としてトリメチルガリウムGa(CH3)3を用い、又、Asを
構成元素として含む雰囲気ガス材料としてアルシンAsH3
を用い、集束された電子ビーム照射によりSi基板205上
にGaAsをデポジシヨンさせた。Ga(CH3)3を雰囲気ガス材
料収納室201に入れ、又、AsH3を雰囲気ガス材料収納室2
02に入れる。GaAsをデポジシヨンさせるSi基板205を試
料台204にセットする。電子ビーム照射系210と試料室20
7を10-5Torr程度以上の高真空に排気する。試料室207と
雰囲気ガス材料収納室201,202とは配管203によつて接続
されており、試料室207を真空排気することにより、雰
囲気ガス材料収納室201,202が真空排気される。その結
果、Ga(CH3)3とAsH3との混合ガスがノズル206を通してS
i基板205に吹きつけられる。一方、電子ビーム211をSi
基板205の所望の部分に照射することにより、 Ga(CH3)3＋AsH3→GaAs＋3CH4 の反応が起こり、Si基板205上に、GaAsが析出する。メ
タンCH4揮発性ガスであり、系外へ排気される。FIG. 2 is a diagram for explaining one embodiment of the GaAs thin film forming method of the present invention, and is a configuration diagram of an electron beam deposition apparatus for carrying out the GaAs thin film forming method. This apparatus is composed of an electron beam irradiation system 209, a sample chamber 207, an atmosphere gas material storage chamber 201 containing Ga as a constituent element, and an atmosphere gas material storage chamber 202 containing As as a constituent element. In this embodiment, trimethylgallium Ga (CH 3 ) 3 is used as the atmosphere gas material containing Ga as a constituent element, and arsine AsH 3 is used as the atmosphere gas material containing As as a constituent element.
Was used to deposit GaAs on the Si substrate 205 by focused electron beam irradiation. Ga (CH 3 ) 3 is placed in the atmosphere gas material storage chamber 201, and AsH 3 is placed in the atmosphere gas material storage chamber 2
Put it in 02. A Si substrate 205 on which GaAs is deposited is set on the sample table 204. Electron beam irradiation system 210 and sample chamber 20
Evacuate 7 to a high vacuum of 10 -5 Torr or more. The sample chamber 207 and the atmospheric gas material storage chambers 201 and 202 are connected by a pipe 203, and the atmospheric gas material storage chambers 201 and 202 are evacuated by evacuating the sample chamber 207. As a result, the mixed gas of Ga (CH 3 ) 3 and AsH 3 passes through the nozzle 206 to S
Sprayed on the i-substrate 205. On the other hand, the electron beam 211
By irradiating a desired portion of the substrate 205, a reaction of Ga (CH 3 ) 3 + AsH 3 → GaAs + 3CH 4 occurs, and GaAs is deposited on the Si substrate 205. Methane CH 4 It is a volatile gas and is exhausted to the outside of the system.
なお、Gaを構成要素として含む雰囲気ガス材料として実
施例に用いたトリメチルガリウムGa(CH3)3の代わりにジ
エチルクロロガリウム(C2H5)2GaClトリエチルガリウムC
a(C2H5)3を用いることもできる。Note that, instead of trimethylgallium Ga (CH 3 ) 3 used in the example as an atmospheric gas material containing Ga as a constituent, diethylchlorogallium (C 2 H 5 ) 2 GaCl triethylgallium C
It is also possible to use a (C 2 H 5 ) 3 .
また、実施例では集束された電子ビームを用いたが集束
されていない電子ビームを用いても良い。Further, in the embodiment, a focused electron beam is used, but an unfocused electron beam may be used.
本発明によれば、ブロードビームを用いて基板上に薄膜
を一括形成することも勿論できるが、集束電子ビームを
用いて計算機制御によりマスクレスデポジシヨンが可能
となり、ナノメータデイメンシヨンの三次元構造も容易
に形成することができる。According to the present invention, it is of course possible to collectively form a thin film on a substrate by using a broad beam, but maskless deposition becomes possible by computer control using a focused electron beam, and a three-dimensional structure of nanometer dimension. Can also be easily formed.
しかも、電子ビームデポジシヨンによるため、本質的に
低温プロセスにより基板表面に吸着した分子を解離で
き、しかも薄膜の成長速度、薄膜の膜質を容易に制御す
ることができる。Moreover, because of the electron beam deposition, the molecules adsorbed on the substrate surface can be dissociated by the low temperature process, and the growth rate of the thin film and the quality of the thin film can be easily controlled.
以上説明したように本発明によれば、電子ビームデポジ
シヨンによつて高純度、高精度の微細なGaAs薄膜パター
ンを簡単に形成できる効果を有するものである。As described above, according to the present invention, it is possible to easily form a fine GaAs thin film pattern of high purity and high precision by electron beam deposition.
第１図は本発明の原理を説明するための図、第２図は本
発明のGaAs薄膜形成方法の一実施例の構成を示す図であ
る。 11……被堆積基板、12……Gaを含んだガス 13……Gaを含んだガスの吸着分子、14……Asを含んだガ
ス 15……Asを含んだガスの吸着分子、16……析出したGaAs
分子 17……揮発性材料分子、18……電子ビームFIG. 1 is a diagram for explaining the principle of the present invention, and FIG. 2 is a diagram showing the configuration of an embodiment of the GaAs thin film forming method of the present invention. 11 …… Deposited substrate, 12 …… Ga-containing gas 13 …… Ga-containing gas adsorbing molecule, 14 …… As-containing gas 15 …… As-containing gas adsorbing molecule, 16 …… GaAs deposited
Molecule 17 …… Volatile material molecule, 18 …… Electron beam
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−148325（ＪＰ，Ａ) 特開 昭59−111322（ＪＰ，Ａ) 特公 昭39−27355（ＪＰ，Ｂ１) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-148325 (JP, A) JP-A-59-111322 (JP, A) JP-B 39-27355 (JP, B1)
Claims (1)
スと砒素（As）を構成元素として含んだガスとを基板上
に供給し、基板上に吸着層を形成し、基板の所望の部分
に電子ビームを照射して、電子ビーム励起反応により吸
着層を揮発性材料と不揮発性材料に分解し、ガリウム砒
素（GaAs）を基板上に堆積してパターニングすることを
特徴とするガリウム砒素薄膜形成方法。1. A gas containing gallium (Ga) as a constituent element and a gas containing arsenic (As) as a constituent element are supplied onto a substrate to form an adsorption layer on the substrate to form a desired portion of the substrate. Gallium arsenide thin film formation characterized by irradiating an electron beam on the substrate, decomposing the adsorption layer into a volatile material and a non-volatile material by an electron beam excitation reaction, and depositing and patterning gallium arsenide (GaAs) on the substrate. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17342885A JPH0682622B2 (en) | 1985-08-06 | 1985-08-06 | Method for forming gallium arsenide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17342885A JPH0682622B2 (en) | 1985-08-06 | 1985-08-06 | Method for forming gallium arsenide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6233420A JPS6233420A (en) | 1987-02-13 |
| JPH0682622B2 true JPH0682622B2 (en) | 1994-10-19 |
Family
ID=15960269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17342885A Expired - Lifetime JPH0682622B2 (en) | 1985-08-06 | 1985-08-06 | Method for forming gallium arsenide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682622B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07326576A (en) * | 1994-05-30 | 1995-12-12 | Nec Corp | Thin film formation of iii-v compound semiconductor |
-
1985
- 1985-08-06 JP JP17342885A patent/JPH0682622B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6233420A (en) | 1987-02-13 |
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