JPH0682702B2 - Bonding tool for semiconductor device assembling apparatus and its processing method - Google Patents
Bonding tool for semiconductor device assembling apparatus and its processing methodInfo
- Publication number
- JPH0682702B2 JPH0682702B2 JP1085156A JP8515689A JPH0682702B2 JP H0682702 B2 JPH0682702 B2 JP H0682702B2 JP 1085156 A JP1085156 A JP 1085156A JP 8515689 A JP8515689 A JP 8515689A JP H0682702 B2 JPH0682702 B2 JP H0682702B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- hole
- bonding tool
- processing
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置の組立て装置用ボンディングツール
とそのレーザ加工法に関するものである。TECHNICAL FIELD The present invention relates to a bonding tool for a semiconductor device assembling apparatus and a laser processing method thereof.
（従来の技術） 半導体装置の組立て工程において、リードフレームのリ
ード部とペレット上のパッド部とをワイヤで接続するた
めにボンディングツールが用いられている。特公昭60-1
9659号公報、特開昭62-20340号公報には第２図（ａ）、
（ｂ）に示すような先端形状のボンディングツールが記
載されている。ボンディングツール１は、ワイヤ２をワ
イヤ通し穴３に通してペレット上ボンディング面に加圧
し、ボンディングする。(Prior Art) In a process of assembling a semiconductor device, a bonding tool is used to connect a lead portion of a lead frame and a pad portion on a pellet with a wire. Japanese Patent Sho 60-1
9659 and Japanese Patent Application Laid-Open No. 62-20340, FIG.
A tip-shaped bonding tool as shown in (b) is described. The bonding tool 1 passes the wire 2 through the wire passing hole 3 and pressurizes the bonding surface on the pellet to perform bonding.
（発明が解決しようとする課題） 従来使用していたボンディングツールはワイヤ通し穴を
放電加工によって作成しており、穴径は40μｍ以上であ
り、従来使用していたボンディングワイヤも20μｍ径程
度のものであった。しかし現在、集積回路の高密度化に
より20μｍ径以下のワイヤによるボンディングの要求が
高まっている。これに対して、従来の加工法である放電
加工ではツールのワイヤ通し穴径が40μｍ以下のものが
できず、穴径が大きすぎるために20μｍ径以下のボンデ
ィングワイヤによるボンディング加工が不可能であっ
た。(Problems to be solved by the invention) The bonding tool that has been conventionally used has wire through holes formed by electric discharge machining, the hole diameter is 40 μm or more, and the bonding wire that has been conventionally used has a diameter of about 20 μm. Met. However, at present, there is an increasing demand for bonding with wires having a diameter of 20 μm or less due to the high density of integrated circuits. On the other hand, in the conventional electric discharge machining, the diameter of the wire through hole of the tool cannot be 40μm or less, and because the hole diameter is too large, it is impossible to perform bonding with a bonding wire of 20μm or less. It was
本発明のレーザ加工によるボンディングツールは、この
問題点を改善するものである。The laser processing bonding tool of the present invention solves this problem.
（課題を解決するための手段） 本発明の半導体装置の組立て装置用ボンディングツール
は、ワイヤ通し穴の穴径をワイヤの出側において10〜30
μｍとし、ワイヤ通し穴の入側にガイド部分を設け、ワ
イヤの入側の穴径を出側径の２倍以上としたことを特徴
とする。(Means for Solving the Problem) A bonding tool for a semiconductor device assembling apparatus according to the present invention has a hole diameter of a wire passage hole of 10 to 30 at the wire exit side.
μm, a guide portion is provided on the entrance side of the wire through hole, and the diameter of the hole on the entrance side of the wire is at least twice the diameter of the exit side.
本発明の半導体装置の組立て装置用ボンディングツール
の加工法は、ワイヤ通し穴をレーザ加工する際に、ワイ
ヤ出側の穴加工はレーザビームの焦点を合わせて照射す
ることにより行い、ワイヤ入側の穴加工はレーザビーム
の焦点をはずしデフォーカスビームとして照射すること
により、または、レーザビームをワイヤ通し穴の入側か
ら深さ方向と一定の角度だけ傾けて照射し、同時にボン
ディングツールをワイヤ通し穴を中心として回転させる
ことにより行い、ワイヤ通し穴の入側にガイド部分を作
成することを特徴とする。In the method for processing a bonding tool for a semiconductor device assembling apparatus of the present invention, when a wire through hole is laser processed, a hole on the wire exit side is formed by focusing and irradiating a laser beam, and Hole processing is performed by defocusing the laser beam and irradiating it as a defocused beam, or by irradiating the laser beam with a certain angle from the entrance side of the wire through hole to the depth direction, and simultaneously applying the bonding tool to the wire through hole. It is characterized in that a guide portion is formed on the entrance side of the wire through hole by rotating the wire through the center.
（作用） 第１図（ａ）、（ｂ）に本発明のボンディングツール１
のワイヤ通し穴３の部分を示すが、ワイヤ通し穴３の穴
径をワイヤの出側においてho＝10〜30μｍとしたので、
20μｍ以下の径のボンディングワイヤによるボンディン
グ加工を行うことが可能となり、集積回路の高密度化の
要求に応じることが可能となる。また、ワイヤ通し穴３
の入側にガイド部分４を設け、ワイヤの入側の穴径TDを
出側径hoの２倍以上としたので、ワイヤ通し穴３へのワ
イヤ２の挿入が容易となる。ガイド部分４の形状は、第
１図（ａ）に示すような湾曲したものであってもよい
し、第１図（ｂ）に示すようなテーパ状のものであって
もよい。(Operation) FIGS. 1 (a) and 1 (b) show the bonding tool 1 of the present invention.
The wire through hole 3 part of is shown. Since the hole diameter of the wire through hole 3 is set to h o = 10 to 30 μm at the wire exit side,
It becomes possible to perform bonding processing with a bonding wire having a diameter of 20 μm or less, and it becomes possible to meet the demand for higher density of integrated circuits. Also, wire through hole 3
Since the guide portion 4 is provided on the inlet side of the wire and the diameter T D of the wire on the inlet side is set to be twice the outlet diameter h o or more, the wire 2 can be easily inserted into the wire passing hole 3. The guide portion 4 may have a curved shape as shown in FIG. 1 (a) or a tapered shape as shown in FIG. 1 (b).
本発明の加工法は、レーザを利用することにより、従来
不可能であった小径のワイヤ通し穴加工を可能とする。
本発明の加工を行う装置の例を第３図に示す。レーザは
アレキサンドライトレーザで、レーザ本体５から水平方
向に発したレーザビーム６はベンディングミラー７でそ
の方向を垂直に変え、レンズ８を介してＸ−Ｙ−Ｚ−θ
テーブル10の上に設置されたボンディングツール１の表
面に集光照射され、ツール１が加工される。サイドノズ
ル９は、加工の際の蒸発の促進、溶融物の除去のためAr
等のガスを加工点に吹き付けるためのものである。The processing method of the present invention enables the processing of a small diameter wire through hole, which has been impossible in the past, by using a laser.
An example of an apparatus for performing the processing of the present invention is shown in FIG. The laser is an alexandrite laser, and the laser beam 6 emitted from the laser main body 5 in the horizontal direction is changed in direction to vertical by a bending mirror 7 and is passed through a lens 8 to produce XYZ-θ.
The surface of the bonding tool 1 installed on the table 10 is focused and irradiated, and the tool 1 is processed. The side nozzle 9 is made of Ar for promoting evaporation during processing and removing molten material.
It is for blowing a gas such as the above to the processing point.
レンズ８の焦点位置をツール１の上表面とすると、ツー
ル１の先端にはワイヤ通し穴径を出側において10〜30μ
ｍとした穴加工を行うことができる。この場合、レーザ
はパルスモード、１パルス当たりのエネルギーは0.5J以
下、１秒当たりのパルス数は10発以下、全パルス数は10
発程度とするのがよい。Assuming that the focal position of the lens 8 is the upper surface of the tool 1, the diameter of the wire passing hole at the tip of the tool 1 is 10 to 30 μm on the exit side.
It is possible to perform hole processing with m. In this case, the laser is in pulse mode, the energy per pulse is 0.5 J or less, the number of pulses per second is 10 or less, and the total number of pulses is 10
It is good to set the firing rate.
また、この穴加工の後、レーザ加工条件を変化させてガ
イド部分４の加工を行う。レンズ８の焦点位置をツール
１の上表面の上方0.3〜3mmにすることにより焦点位置で
のエネルギー密度を下げ、かつビーム径を大きくする。
この結果、ワイヤ通し穴３の入側にガイド部分４を作成
することができる。この場合、レーザはパルスモード、
１パルス当たりのエネルギーは1J以下、パルス数は10発
以下とするのがよい。Further, after the hole processing, the laser processing conditions are changed to process the guide portion 4. By setting the focal position of the lens 8 to 0.3 to 3 mm above the upper surface of the tool 1, the energy density at the focal position is lowered and the beam diameter is increased.
As a result, the guide portion 4 can be formed on the entry side of the wire through hole 3. In this case, the laser is in pulsed mode,
The energy per pulse should be 1 J or less, and the number of pulses should be 10 or less.
さらに、別のガイド部分加工法として、レンズ８の焦点
位置をツール１の上表面とし、ツール１はＸ−Ｙ−Ｚ−
θテーブル10を用いてレーザビームがワイヤ通し穴３の
深さ方向と一定の角度だけ傾くようにし、レーザの加工
パルス１発ごとにテーブル10を回転させれば、ワイヤ通
し穴３の入側にガイド部分４を作成することができる。
この場合、レーザはパルスモード、１パルス当たりのエ
ネルギーは0.5J以下、１秒当たりのパルス数は10発以
下、全パルス数は30発程度とするのがよい。Further, as another guide part processing method, the focus position of the lens 8 is set on the upper surface of the tool 1, and the tool 1 is XYZ-
By using the θ table 10 to make the laser beam tilt at a certain angle with the depth direction of the wire through hole 3 and rotating the table 10 for each laser machining pulse, The guide portion 4 can be created.
In this case, the laser is preferably in pulse mode, the energy per pulse is 0.5 J or less, the number of pulses per second is 10 or less, and the total number of pulses is about 30.
これらガイド部分４の加工は、ガイド部分４以外のワイ
ヤ通し穴３を加工した後だけでなく、ワイヤ通し穴３の
加工の前に行うことも可能であり、本発明は両者を含む
ものである。The processing of these guide portions 4 can be performed not only after processing the wire passing hole 3 other than the guide portion 4 but also before processing the wire passing hole 3, and the present invention includes both.
（実施例） 第３図に示す装置を用いてワイヤ通し穴の加工を行っ
た。(Example) A wire through hole was processed using the apparatus shown in FIG.
実施例１ 本実施例に使用したボンディングツール１は超硬鋼製
（WC）とした。レーザはパルスモード、１パルス当たり
のエネルギー0.05J、１秒当たりのパルス数は２発、全
パルス数は10発、レンズ８の焦点距離は30mm、焦点位置
はツール１の上表面とした。この結果、ツール１の先端
に入側の穴径hi＝60μｍ、出側の穴径ho＝20μｍのワイ
ヤ通し穴３の加工を行うことができた。Example 1 The bonding tool 1 used in this example was made of cemented carbide (WC). The laser was in pulse mode, the energy per pulse was 0.05 J, the number of pulses per second was 2, the total number of pulses was 10, the focal length of the lens 8 was 30 mm, and the focal position was on the upper surface of the tool 1. As a result, it was possible to machine the wire through hole 3 having a hole diameter h i = 60 μm on the inlet side and a hole diameter h o = 20 μm on the outlet side at the tip of the tool 1.
この穴加工後、レーザ加工条件を変化させてガイド部分
４の加工を行った。レーザはパルスモード、１パルス当
たりのエネルギー0.5J、パルス数は１発で、レンズ８の
焦点位置をツール１の上表面の上方1mmにした。この結
果、ワイヤ通し穴３の入側に入側の穴径TD＝100μｍ、
深さTF＝60μｍのガイド部分４を作成することができ
た。After this hole processing, the laser processing conditions were changed to process the guide portion 4. The laser was in pulse mode, the energy per pulse was 0.5 J, the number of pulses was one shot, and the focus position of the lens 8 was set to 1 mm above the upper surface of the tool 1. As a result, on the entry side of the wire passage hole 3, the entry side hole diameter T D = 100 μm,
It was possible to create the guide portion 4 having a depth T F = 60 μm.
実施例２ 実施例１におけると同様にhi＝60μｍ、ho＝20μｍの穴
加工を行った後、レーザ加工条件を変化させてガイド部
分４の加工を行った。レーザはパルスモード、１パルス
当たりのエネルギー0.05J、１秒当たりのパルス数は２
発、全パルス数は12発で、レンズ８の焦点位置をツール
１の上表面とし、ツール１はＸ−Ｙ−Ｚ−θテーブル10
を用いてワイヤ通し穴３の深さ方向とレーザビームの方
向とを60°傾け、レーザの加工パルス１発ごとにテーブ
ル10を30°ずつ回転させた。この結果、ワイヤ通し穴３
の入側に入側の穴径TD＝90μｍ、深さTF＝40μｍのガイ
ド部分４を作成することができた。Example 2 After drilling holes with h i = 60 μm and h o = 20 μm in the same manner as in Example 1, the guide portion 4 was processed by changing the laser processing conditions. Laser is in pulse mode, energy per pulse is 0.05J, number of pulses per second is 2
The total number of pulses is 12, and the focal position of the lens 8 is the upper surface of the tool 1, and the tool 1 is the XYZ-θ table 10.
Was used to incline the depth direction of the wire through hole 3 and the direction of the laser beam by 60 °, and the table 10 was rotated by 30 ° for each laser processing pulse. As a result, the wire through hole 3
A guide portion 4 having a hole diameter T D = 90 μm and a depth T F = 40 μm on the entrance side could be formed on the entrance side of.
（発明の効果） 本発明によれば、従来不可能であった40μｍ以下の穴径
のワイヤ通し穴をもち、かつワイヤの挿入が容易なボン
ディングツールが得られ、20μｍ以下の径のボンディン
グワイヤによるボンディング加工が可能となり、集積回
路の高密度化の要求に応じることができる。(Effects of the Invention) According to the present invention, it is possible to obtain a bonding tool having a wire through hole with a hole diameter of 40 μm or less, which is not possible conventionally, and which is easy to insert a wire. Bonding is possible, and it is possible to meet the demand for higher density of integrated circuits.
第１図（ａ）、（ｂ）は本発明のボンディングツールの
ワイヤ通し穴の部分を示す図、 第２図（ａ）（ｂ）はボンディングツールを示す図、 第３図はレーザを利用してボンディングツールを加工す
る装置の例を示す図である。 １……ボンディングツール、２……ワイヤ、３……ワイ
ヤ通し穴、４……ガイド部分、５……レーザ本体、６…
…レーザビーム、７……ベンディングミラー、８……レ
ンズ、９……サイドノズル、10……Ｘ−Ｙ−Ｚ−θテー
ブル。1 (a) and 1 (b) are views showing a wire through hole portion of the bonding tool of the present invention, FIGS. 2 (a) and 2 (b) are views showing the bonding tool, and FIG. It is a figure which shows the example of the apparatus which processes a bonding tool. 1 ... Bonding tool, 2 ... Wire, 3 ... Wire through hole, 4 ... Guide part, 5 ... Laser body, 6 ...
... laser beam, 7 ... bending mirror, 8 ... lens, 9 ... side nozzle, 10 ... XYZ-θ table.
Claims (3)
て10〜30μｍとし、ワイヤ通し穴の入側にガイド部分を
設け、ワイヤの入側の穴径を出側径の２倍以上としたこ
とを特徴とする半導体装置の組立て装置用ボンディング
ツール。1. A wire through hole having a hole diameter of 10 to 30 μm on the wire outlet side, a guide portion provided on the wire through hole inlet side, and the wire inlet side hole diameter being at least twice the wire outlet side diameter. A bonding tool for a semiconductor device assembling apparatus, which is characterized in that
ヤ出側の穴加工はレーザビームの焦点を合わせて照射す
ることにより行い、ワイヤ入側の穴加工はレーザビーム
の焦点をはずしデフォーカスビームとして照射すること
により行い、ワイヤ通し穴の入側にガイド部分を作成す
ることを特徴とする請求項１記載の半導体装置の組立て
装置用ボンディングツールの加工法。2. When laser processing a wire through hole, hole processing on the wire exit side is performed by focusing and irradiating a laser beam, and hole processing on the wire entry side defocuses the laser beam. 2. The method of processing a bonding tool for a semiconductor device assembling apparatus according to claim 1, wherein the guide portion is formed on the entrance side of the wire through hole by irradiating as a beam.
ヤ出側の穴加工はレーザビームの焦点を合わせて照射す
ることにより行い、ワイヤ入側の穴加工はレーザビーム
をワイヤ通し穴の入側から深さ方向と一定の角度だけ傾
けて照射し、同時にボンディングツールをワイヤ通し穴
を中心として回転させることにより行い、ワイヤ通し穴
の入側にガイド部分を作成することを特徴とする請求項
１記載の半導体装置の組立て装置用ボンディングツール
の加工法。3. When laser machining a wire through hole, the hole on the wire exit side is formed by focusing and irradiating the laser beam, and the hole on the wire entry side is formed by entering the laser beam into the wire through hole. The irradiation is performed by inclining from the side at a certain angle with the depth direction, and at the same time, the bonding tool is rotated by rotating the wire through hole as a center to form a guide portion on the entrance side of the wire through hole. 1. A method for processing a bonding tool for a semiconductor device assembling apparatus according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085156A JPH0682702B2 (en) | 1989-04-04 | 1989-04-04 | Bonding tool for semiconductor device assembling apparatus and its processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085156A JPH0682702B2 (en) | 1989-04-04 | 1989-04-04 | Bonding tool for semiconductor device assembling apparatus and its processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02263448A JPH02263448A (en) | 1990-10-26 |
| JPH0682702B2 true JPH0682702B2 (en) | 1994-10-19 |
Family
ID=13850806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1085156A Expired - Lifetime JPH0682702B2 (en) | 1989-04-04 | 1989-04-04 | Bonding tool for semiconductor device assembling apparatus and its processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682702B2 (en) |
-
1989
- 1989-04-04 JP JP1085156A patent/JPH0682702B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02263448A (en) | 1990-10-26 |
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