JPH0687475B2 - Substrate table - Google Patents
Substrate tableInfo
- Publication number
- JPH0687475B2 JPH0687475B2 JP13566487A JP13566487A JPH0687475B2 JP H0687475 B2 JPH0687475 B2 JP H0687475B2 JP 13566487 A JP13566487 A JP 13566487A JP 13566487 A JP13566487 A JP 13566487A JP H0687475 B2 JPH0687475 B2 JP H0687475B2
- Authority
- JP
- Japan
- Prior art keywords
- mounting table
- substrate
- air
- wafer
- flow path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、基板載置台に関する。TECHNICAL FIELD The present invention relates to a substrate mounting table.
(従来の技術) 従来より、基板例えば半導体ウエハを製造する工程にお
いては、製造されたウエハの電気的特性をプローブ装置
により検査測定している。ここで、半導体ウエハは、品
種毎に検査測定法が異なり、品種によっては、半導体ウ
エハを加熱して検査測定を実行するものがある。かかる
場合に、通常半導体ウエハを載置する載置台に設けられ
た加熱機構により、半導体ウエハの加熱を行っていた。
又、加熱した載置台で検査測定を実行後、常温での検査
測定を実行するためには、加熱された載置台を冷却する
必要があった。(Prior Art) Conventionally, in the process of manufacturing a substrate such as a semiconductor wafer, the electrical characteristics of the manufactured wafer are inspected and measured by a probe device. Here, the semiconductor wafers have different inspection and measurement methods for each product type, and depending on the product type, there are some that heat the semiconductor wafer to perform the inspection and measurement. In such a case, the semiconductor wafer is usually heated by the heating mechanism provided on the mounting table on which the semiconductor wafer is mounted.
Further, in order to perform the inspection measurement at room temperature after performing the inspection measurement on the heated mounting table, it is necessary to cool the heated mounting table.
上記のように、加熱機構および冷却機構を有している載
置台は特開昭55−44931号公報で周知である。As described above, a mounting table having a heating mechanism and a cooling mechanism is known from Japanese Patent Laid-Open No. 55-44931.
(発明が解決しようとする問題点) しかしながら、上記のような加熱・冷却機構を有する載
置台は構造が複雑になり、載置台自体が大型化してしま
うため問題があった。さらに、すでに所有する載置台を
利用できないため、高価な載置台を新たに製造する必要
があり、汎用性に欠けていた。(Problems to be Solved by the Invention) However, the mounting table having the heating / cooling mechanism as described above has a problem in that the structure becomes complicated and the mounting table itself becomes large. Further, since the mounting table already owned cannot be used, it is necessary to newly manufacture an expensive mounting table, which lacks versatility.
この発明は、上記点を改善するためになされたもので、
載置台を容易に冷却可能とし、冷却時間を短縮する効果
を得る基板載置台を提供するものである。The present invention has been made to improve the above points,
(EN) Provided is a substrate mounting table capable of easily cooling the mounting table and shortening the cooling time.
(問題点を解決するための手段) 上記問題点を解決するために本発明によれば基板を載置
面に載置する基板載置台であって、前記基板載置台に設
けられ前記基板を加熱する加熱手段と、前記基板載置台
に内設され前記載置面に開口した空気流路と、前記空気
流路に流路切換手段を介して連通可能に設けられ、前記
基板を前記載置面に真空吸着する排気手段と、前記空気
流路に前記流路切換手段を介して連通可能に設けられ空
気を前記載置面に送出し前記基板載置台を冷却する送風
手段とを備え、前記流路切換手段は、前記空気流通路を
前記排気手段と前記送風手段とのいずれか一方に選択的
に切り換え連通させるように構成されていることを特徴
とする、基板載置台が提供される。(Means for Solving the Problems) In order to solve the above problems, according to the present invention, there is provided a substrate mounting table for mounting a substrate on a mounting surface, wherein the substrate mounting table is provided to heat the substrate. Heating means, an air channel provided in the substrate mounting table and opened to the mounting surface, and the air channel are provided so as to be able to communicate with each other via a channel switching means, and the substrate is mounted on the mounting surface. An exhaust unit for vacuum adsorption to the air passage, and an air blowing unit for communicating with the air flow path through the flow path switching unit to send air to the mounting surface to cool the substrate mounting table. A substrate mounting table is provided in which the path switching means is configured to selectively switch and communicate the air flow path with either the exhaust means or the air blowing means.
さらに本発明によれば、前記送風手段により送出される
空気が冷却空気であることが好ましく、また前記加熱手
段により前記基板を150℃まで加熱可能であることが好
ましく、また前記流路切換手段が電磁弁であることが好
ましい。Furthermore, according to the present invention, it is preferable that the air blown out by the blower is cooling air, and the substrate can be heated to 150 ° C. by the heating unit, and the flow path switching unit is It is preferably a solenoid valve.
(作用) 本発明によれば、基板載置台に内設した空気流通路に空
気を流通させて上記基板載置台を冷却することにより、
載置台を容易に冷却可能とし、冷却時間を短縮すること
を可能とする効果が得られる。しかも、冷却のための空
気を流通させる空気流通路と、基板を載置面に真空吸着
するための空気流通路とを兼用するので、装置の構造を
簡略化することができる。(Operation) According to the present invention, air is circulated in the air flow passage provided in the substrate mounting table to cool the substrate mounting table.
The mounting table can be easily cooled, and the cooling time can be shortened. Moreover, since the air flow passage for circulating the cooling air and the air flow passage for vacuum-adsorbing the substrate on the mounting surface are used in common, the structure of the apparatus can be simplified.
(実施例) 次に本発明の基板載置台をプローブ装置に装着した一実
施例を図面を参照して説明する。(Example) Next, one example in which the substrate mounting table of the present invention is mounted on a probe device will be described with reference to the drawings.
このプローブ装置(1)は、第2図に示すように、カセ
ット収納部(4)と検査測定部とから構成されている。
基板例えば半導体ウエハ(2)はウエハカセット(3)
に所定の間隔を設けて25枚設置されている。このウエハ
(2)を収納したカセット(3)がカセット収納部
(4)に搬入される。As shown in FIG. 2, the probe device (1) is composed of a cassette housing section (4) and an inspection and measurement section.
Substrates such as semiconductor wafers (2) are wafer cassettes (3)
Twenty-five pieces are installed at a predetermined interval. The cassette (3) accommodating the wafer (2) is carried into the cassette accommodating portion (4).
このカセット収納部(4)から検査測定されるウエハ
(2)がバキュームピンセット(図示せず)などで一枚
ずつ取り出され、ウエハの予備位置決めステージ(5)
に搬送される。Wafers (2) to be inspected and measured from the cassette housing (4) are taken out one by one by vacuum tweezers (not shown) or the like, and a wafer pre-positioning stage (5).
Be transported to.
この予備位置決めステージ(5)でウエハ(2)のオリ
フラなどが基準に対して精度±1°位まで予備位置決め
された後、ウエハ(2)は載置台例えば測定ステージ
(6)に搬送され、真空吸着機構でウエハ(2)の裏面
が吸着保持される。この搬送はウエハ(2)の裏面を真
空吸着することにより行われる。After the orientation flat of the wafer (2) is pre-positioned by the preliminary positioning stage (5) to an accuracy of about ± 1 ° with respect to the reference, the wafer (2) is transferred to a mounting table, for example, a measurement stage (6), and vacuumed. The back surface of the wafer (2) is suction-held by the suction mechanism. This transfer is performed by vacuum suction of the back surface of the wafer (2).
このようにして測定ステージ(6)に搬送されたウエハ
(2)は、CCDカメラを使ったパターン認識機構又はレ
ーザによる認識機構を用いて、さらに高精度に位置決め
される。この正確な位置決め後、プローブカード(7)
のプローブ針(8)先端に自動的に下方からウエハ
(2)を上昇させて、ソフトタッチさせウエハ(2)の
電気特性を測定する。The wafer (2) thus transferred to the measurement stage (6) is positioned with higher accuracy by using a pattern recognition mechanism using a CCD camera or a laser recognition mechanism. After this accurate positioning, probe card (7)
The wafer (2) is automatically lifted from below to the tip of the probe needle (8) and soft-touched to measure the electrical characteristics of the wafer (2).
この測定に際し、ウエハの品種によってはウエハ(2)
を加熱状態に設定し測定する必要がある。このウエハ
(2)の加熱は、ウエハ(2)を載置した測定ステージ
(6)を加熱し、この測定ステージ(6)からウエハ
(2)への熱伝導を利用して行なう。測定ステージ
(6)の加熱は、測定ステージ(6)に設けられた加熱
機構(9)で例えば150℃位まで加熱可能である。When performing this measurement, depending on the type of wafer, the wafer (2)
It is necessary to set to the heating state and measure. The heating of the wafer (2) is performed by heating the measurement stage (6) on which the wafer (2) is placed and utilizing heat conduction from the measurement stage (6) to the wafer (2). The measurement stage (6) can be heated up to, for example, about 150 ° C. by the heating mechanism (9) provided on the measurement stage (6).
次に、加熱状態でウエハ(2)の測定終了後、常温状態
例えば25℃位でウエハ(2)を測定する場合には、加熱
状態にある測定ステージ(6)を冷却して常温状態にも
どす必要がある。Next, after measuring the wafer (2) in the heated state, when the wafer (2) is measured at a room temperature state, for example, about 25 ° C., the measurement stage (6) in the heated state is cooled and returned to the room temperature state. There is a need.
この冷却は、本発明によれば、例えば上記真空吸着機構
を利用して行なわれる。真空吸着機構は、ウエハ(2)
を載置する載置面(10)にホール(11)を設け、このホ
ール(11)に対応したエア流通路(12)を載置台例えば
測定ステージ(6)に内設して、エア流通路(12)とバ
キューム機構(13)を接続したものである。According to the present invention, this cooling is performed by utilizing, for example, the above vacuum suction mechanism. Vacuum suction mechanism is used for wafer (2)
A hole (11) is provided on a mounting surface (10) on which the air is placed, and an air flow passage (12) corresponding to the hole (11) is provided in a mounting table, for example, a measurement stage (6), and the air flow passage is provided. (12) and the vacuum mechanism (13) are connected.
本発明によれば、この真空吸着機構を冷却機構に流用す
ることが可能である。すなわち、測定ステージ(6)に
内設されたエア流通路からのチューブ(14)と。バキュ
ーム機構(13)からのチューブ(15)と、エア送出機構
(16)からのチューブ(17)とを切換弁例えば電磁弁
(18)に3ポート状態で接続する。ここで電磁弁(18)
を動作させることにより真空吸着機構と冷却機構を切換
えて使用できる。According to the present invention, this vacuum suction mechanism can be used for the cooling mechanism. That is, the tube (14) from the air flow passage provided inside the measurement stage (6). A tube (15) from the vacuum mechanism (13) and a tube (17) from the air delivery mechanism (16) are connected to a switching valve, for example, a solenoid valve (18) in a 3-port state. Solenoid valves here (18)
The vacuum suction mechanism and the cooling mechanism can be switched and used by operating.
次に載置台の動作作用を説明する。Next, the operation of the mounting table will be described.
まず検査測定時には、基板例えば半導体ウエハ(2)が
載置台例えば測定ステージ(6)に載置される。その際
ウエハ(2)の裏面が吸着保持されるが、その吸着保持
は、測定ステージ(6)の載置面(10)に設けられたホ
ール(11)とバキューム機構(13)が、チューブ(15)
と電磁弁(18)とチューブ(14)とエア流通路(12)と
を介して接続されているため、バキューム機構(13)を
作動させホール(11)でウエハ(2)を真空吸着するこ
とにより実行可能である。この吸着と同時に測定ステー
ジ(6)に設けられた加熱機構(9)でウエハ(2)を
例えば150℃位まで加熱した後、予め定められた動作で
ウエハ(2)の電気的特性の検査測定が実行される。First, at the time of inspection measurement, a substrate such as a semiconductor wafer (2) is placed on a mounting table such as a measuring stage (6). At this time, the back surface of the wafer (2) is suction-held, and the suction-holding is performed by the hole (11) provided on the mounting surface (10) of the measurement stage (6) and the vacuum mechanism (13) by the tube ( 15)
And the solenoid valve (18), the tube (14) and the air flow passage (12) are connected to each other, so that the vacuum mechanism (13) is operated to vacuum-adsorb the wafer (2) through the hole (11). Can be performed by At the same time as this adsorption, the wafer (2) is heated to, for example, about 150 ° C. by the heating mechanism (9) provided on the measurement stage (6), and then the electrical characteristics of the wafer (2) are inspected and measured by a predetermined operation. Is executed.
次に、加熱状態でウエハ(2)を測定後、測定ステージ
(6)を常温状態に設定する。この設定は、ウエハ
(2)を測定ステージ(6)から他の位置へ搬送した
後、電磁弁(18)を切換えて、エア送出機構(16)から
エアをチューブ(17)、電磁弁(18)およびチューブ
(14)を介して測定ステージ(6)に送り、その測定ス
テージ(6)内設されたエア流通路(12)内にエアを流
通させ、さらにホール(11)からエアを噴出させる。こ
のように測定ステージ(6)内にエアを流通させて強制
冷却することにより、自然冷却に比べて冷却時間を短縮
することが可能になる。Next, after measuring the wafer (2) in a heated state, the measurement stage (6) is set to a room temperature state. In this setting, after the wafer (2) is transferred from the measurement stage (6) to another position, the solenoid valve (18) is switched and air is sent from the air delivery mechanism (16) to the tube (17) and solenoid valve (18). ) And the tube (14) to the measurement stage (6), the air is circulated in the air flow passage (12) provided in the measurement stage (6), and the air is further ejected from the hole (11). . In this way, the cooling time can be shortened as compared with the natural cooling by circulating the air in the measurement stage (6) and forcibly cooling it.
第3図は上記説明の強制冷却と自然冷却の対比を示した
ものである。載置台の設定温度90℃、室内温度21℃、載
置台常温22.5℃と設定し、縦軸を載置台温度(℃)、横
軸を経過時間(分)とした場合、(A)が自然冷却、
(B)が強制冷却である。載置台を設定温度90℃から常
温22.5℃まで冷却するには、自然冷却(A)の場合60分
以上かかるのに対し、強制冷却(B)の場合約30分で冷
却が終了する。即ち、強制冷却の場合自然冷却に比べて
約半分の時間で載置台を冷却することが可能になる。FIG. 3 shows a comparison between the forced cooling and the natural cooling described above. When the setting temperature of the mounting table is 90 ° C, the room temperature is 21 ° C, the mounting table room temperature is 22.5 ° C, and the vertical axis is the mounting table temperature (° C) and the horizontal axis is the elapsed time (minutes), (A) is naturally cooled. ,
(B) is forced cooling. It takes 60 minutes or more for the natural cooling (A) to cool the mounting table from the set temperature of 90 ° C. to the room temperature of 22.5 ° C., whereas in the case of the forced cooling (B), the cooling is completed in about 30 minutes. That is, in the case of forced cooling, the mounting table can be cooled in about half the time as compared with natural cooling.
本発明は上記実施例に限定されるものではなく、エアと
して冷却エアを使用すればより一層冷却時間を短縮でき
る。さらに、エアは載置台内を流通すればよく、必ずし
も載置台からエアを噴出させる必要はない。さらに、載
置台内部にエアを流通させると同時に外部より載置台に
向けてエアを吹付けると、より一層冷却効果がある。The present invention is not limited to the above embodiment, and the cooling time can be further shortened by using cooling air as the air. Further, the air has only to flow in the mounting table, and it is not always necessary to eject the air from the mounting table. Furthermore, when air is circulated inside the mounting table and air is blown from the outside toward the mounting table, the cooling effect is further enhanced.
(発明の効果) 以上のように本発明の基板載置台によれば、内設した加
熱手段により基板を加熱し、前記基板載置台の載置面が
高温になった場合であっても、前記基板載置台に内設さ
れた真空吸着用の空気流通路を介して空気を送出させる
ことにより、前記基板載置台を容易に冷却することが可
能である。したがって、自然冷却に較べて短時間で冷却
された前記基板載置台に新たに基板を載置することによ
り加熱されない基板の状態を短時間のうちに提供でき、
載置される基板の温度が異なる製造および検査に好都合
な基板載置台を提供できる。(Effects of the Invention) As described above, according to the substrate mounting table of the present invention, even when the substrate is heated by the heating means provided therein and the mounting surface of the substrate mounting table becomes high in temperature, It is possible to easily cool the substrate mounting table by sending out air through the vacuum suction air flow passage provided in the substrate mounting table. Therefore, it is possible to provide the state of the substrate that is not heated in a short time by newly mounting the substrate on the substrate mounting table that is cooled in a short time compared to natural cooling,
It is possible to provide a substrate mounting table that is convenient for manufacturing and inspection in which the temperature of the mounted substrate is different.
さらに、基板を載置面に真空吸着するための空気流通路
と、基板載置台の冷却のための空気を流通させる空気流
通路との載置面に開口した空気流路において兼用してい
るので、装置の構造を簡略化することができる。Furthermore, since the air flow passage for vacuum-adsorbing the substrate on the mounting surface and the air flow passage for circulating the air for cooling the substrate mounting table are also used in the air flow path opened on the mounting surface. The structure of the device can be simplified.
第1図は本発明の一実施例を説明するための基板載置台
の構成図、第2図は第1図の載置台を装着したプローブ
装置の図、第3図は第1図の載置台の冷却期間を示す図
である。 6…測定ステージ 9…加熱機構 11…ホール 12…エア流通路 16…エア送出機構 18…電磁弁FIG. 1 is a configuration diagram of a substrate mounting table for explaining an embodiment of the present invention, FIG. 2 is a diagram of a probe device equipped with the mounting table of FIG. 1, and FIG. 3 is a mounting table of FIG. It is a figure which shows the cooling period of. 6 ... Measuring stage 9 ... Heating mechanism 11 ... Hall 12 ... Air flow passage 16 ... Air delivery mechanism 18 ... Solenoid valve
Claims (4)
て、前記基板載置台に設けられ前記基板を加熱する加熱
手段と、 前記基板載置台に内設され前記載置面に開口した空気流
路と、 前記空気流路に流路切換手段を介して連通可能に設けら
れ、前記基板を前記載置面に真空吸着する排気手段と、 前記空気流路に前記流路切換手段を介して連通可能に設
けられ、空気を前記載置面に送出し前記基板載置台を冷
却する送風手段とを備え、 前記流路切換手段は、前記空気流通路を前記排気手段と
前記送風手段とのいずれか一方に選択的に切り換え連通
させるように構成されていることを特徴とする、基板載
置台。1. A substrate mounting table for mounting a substrate on a mounting surface, the heating means being provided on the substrate mounting table for heating the substrate, and being mounted on the substrate mounting table on the mounting surface. An open air flow path, an exhaust means provided so as to be able to communicate with the air flow path via a flow path switching means, and a vacuum means for adsorbing the substrate on the mounting surface by vacuum, and the flow path switching means in the air flow path And a blower means for sending air to the placement surface to cool the substrate mounting table, the flow path switching means having the air flow passage through the exhaust means and the blower means. And a substrate mounting table configured to selectively communicate with either one of the two.
空気であることを特徴とする、特許請求の範囲第1項に
記載の基板載置台。2. The substrate mounting table according to claim 1, wherein the air blown out by the blower means is cooling air.
加熱可能であることを特徴とする、特許請求の範囲第1
項または第2項に記載の基板載置台。3. The substrate according to claim 1, wherein the substrate can be heated up to 150 ° C. by the heating means.
The substrate mounting table according to item 2 or item 2.
徴とする、特許請求の範囲第1項、第2項または第3項
のいずれかに記載の基板載置台。4. The substrate mounting table according to claim 1, wherein the flow path switching means is an electromagnetic valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13566487A JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13566487A JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63299357A JPS63299357A (en) | 1988-12-06 |
| JPH0687475B2 true JPH0687475B2 (en) | 1994-11-02 |
Family
ID=15157053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13566487A Expired - Lifetime JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687475B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4490539B2 (en) * | 2000-02-15 | 2010-06-30 | 東京エレクトロン株式会社 | Wafer chuck and semiconductor wafer inspection method |
| JP4902986B2 (en) * | 2005-12-01 | 2012-03-21 | 株式会社東京精密 | Prober and prober wafer stage heating or cooling method |
-
1987
- 1987-05-29 JP JP13566487A patent/JPH0687475B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63299357A (en) | 1988-12-06 |
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