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JPH0688876B2 - Magneto-optical crystal - Google Patents
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JPH0688876B2 - Magneto-optical crystal - Google Patents

Magneto-optical crystal

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Publication number
JPH0688876B2
JPH0688876B2 JP29943886A JP29943886A JPH0688876B2 JP H0688876 B2 JPH0688876 B2 JP H0688876B2 JP 29943886 A JP29943886 A JP 29943886A JP 29943886 A JP29943886 A JP 29943886A JP H0688876 B2 JPH0688876 B2 JP H0688876B2
Authority
JP
Japan
Prior art keywords
crystal
temperature
garnet
faraday rotation
rotation angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29943886A
Other languages
Japanese (ja)
Other versions
JPS63151699A (en
Inventor
尚 峯本
薫 松田
修 鎌田
石塚  訓
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP29943886A priority Critical patent/JPH0688876B2/en
Publication of JPS63151699A publication Critical patent/JPS63151699A/en
Publication of JPH0688876B2 publication Critical patent/JPH0688876B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 産業上の利用分野 本発明は光通信,光計測及び光記録等に用いられる磁気
光学結晶の特性改善に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of characteristics of a magneto-optical crystal used for optical communication, optical measurement, optical recording and the like.

従来の技術 光通信,光計測の分野で光源として用いられる半導体レ
ーザ(以後LDと呼ぶ)のノイズ発生原因となる反射戻り
光をおさえるため、ガーネット結晶を用いた光アイソレ
ータがよく使用されている。また液相エピタキシャル法
を用いたBi置換型ガーネットは、結晶の生産性がよい事
から最近盛んに研究されている。
2. Description of the Related Art An optical isolator using a garnet crystal is often used to suppress reflected return light that causes noise in a semiconductor laser (hereinafter referred to as LD) used as a light source in the fields of optical communication and optical measurement. In addition, Bi-substituted garnet using the liquid phase epitaxial method has been actively researched recently because of its high crystal productivity.

一般に鉄を含むガーネットは強磁性体であり、温度が変
わるとその磁化が変化するため磁化によって決まるファ
ラデー回転角も変化する。単位長さ当りのファラデー回
転角をファラデー回転係数θFdeg・cm-1と呼ぶが、この
時厚みtcmの結晶を透過した光のファラデー回転角θdeg
は、θ=θFtである。光アイソレータ用としてはファ
ラデー回転角の絶対値|θ|が|θ|=45degとなるよ
うに結晶の厚みを調節する事が必要である。
Generally, garnet containing iron is a ferromagnetic material, and its magnetization changes when temperature changes, so that the Faraday rotation angle determined by the magnetization also changes. The Faraday rotation angle per unit length is called the Faraday rotation coefficient θ F degcm -1 . At this time, the Faraday rotation angle θ deg of the light transmitted through the crystal with the thickness tcm is θ deg.
Is θ = θ F t. For optical isolators, it is necessary to adjust the crystal thickness so that the absolute value of the Faraday rotation angle | θ | becomes | θ | = 45deg.

しかしガーネット結晶のθFは温度によって変化するた
め、例えば温度20℃で|θ|が45degになるように結晶
の厚みtを調節しても、温度が変化すると|θ|が45de
gから変化してアイソレーション比が劣化する。θの45d
egからの温度変化をβdeg・℃-1と定義すると、θの温
度変化によるアイソレーション比の劣化(計算値)は第
2図のようになる。通常のイットリウム・鉄・ガーネッ
ト(YIG)では|β|0.04deg・℃-1、Biを含むガーネ
ットでは通常|β|0.06〜0.11deg・℃-1である。
However, since θ F of a garnet crystal changes with temperature, even if the crystal thickness t is adjusted so that | θ | becomes 45 deg at a temperature of 20 ° C., if the temperature changes, | θ |
It changes from g and the isolation ratio deteriorates. 45d of θ
If the temperature change from eg is defined as β deg · ° C -1 , the deterioration of the isolation ratio (calculated value) due to the temperature change of θ is as shown in Fig. 2. Ordinary yttrium / iron / garnet (YIG) is | β | 0.04deg ・ ° C -1 , and Bi containing garnet is usually | β | 0.06-0.11deg ・ ° C -1 .

近年Bi置換型ガーネットにおいて、この|β|を小さく
する試みが種々なされている。
In recent years, various attempts have been made to reduce this | β | in Bi substitution type garnet.

例えば第10回日本応用磁気学会学術講演概要集4pE-5,本
田らにより(TbBi)3Fe5O12でβ0.04deg・℃-1とする事
が実現され、また同じく4aE-1,浅原らにより(GdBi)3(Fe
AlGa)5O12と(TbYbBi)3Fe5O12の2種類の結晶を重ね合わ
せる事によりβ0.00deg・℃-1とする事が試みられて
いる。
For example, the 10th Annual Meeting of the Japan Society for Applied Magnetics 4pE-5, Honda et al. Realized that (TbBi) 3 Fe 5 O 12 ββ 0.04 deg ・ ° C -1 and also 4aE-1, Asahara et al. By (GdBi) 3 (Fe
It has been attempted to set β0.00deg · ° C -1 by superimposing two kinds of crystals of AlGa) 5 O 12 and (TbYbBi) 3 Fe 5 O 12 .

発明が解決しようとする問題点 上記(TbBi)3Fe5O12ではTb原子がθの温度変化を小さく
する役割をはたしているが、Tb濃度を増すとBiの濃度が
小さくなり、したがってファラデー回転係数が小さくな
り、光アイソレータとして必要な|θ|=45degを得る
のには結晶の厚みが厚くなる。またこの系ではβ≦0.03
の結晶は得られておらず、βを調整する事ができない。
さらにTbの濃度を増した場合にはエピタキシャル成長で
結晶を成長させる時に、格子定数の適当な基板が市販さ
れていないという問題があった。
Problems to be Solved by the Invention In the above (TbBi) 3 Fe 5 O 12 , Tb atoms play a role of reducing the temperature change of θ, but as the concentration of Tb increases, the concentration of Bi decreases and therefore the Faraday rotation coefficient. Becomes smaller, and the thickness of the crystal becomes thicker in order to obtain | θ | = 45 deg required for the optical isolator. Also in this system β ≤ 0.03
No crystals have been obtained, and β cannot be adjusted.
Further, when the concentration of Tb was increased, there was a problem that a substrate having an appropriate lattice constant was not commercially available when growing a crystal by epitaxial growth.

次に上記(GdBi)3(FeAlGa)5O12と(TbYbBi)3Fe5O12を重ね
合わせた方法では、(GdBi)3(FeAlGa)5O12が(TbYbBi)3Fe
5O12のファラデー回転角の温度変化を小さくする温度補
償用結晶として用いられている。しかしその温度補償効
果が小さいため、結晶の厚みが厚くなることにより光の
吸収が増え、それぞれの結晶を成長するのに時間がかか
る。また結晶を2個必要とする。そのため実際に光アイ
ソレータとして使用する場合、結晶の研磨と結晶表面で
の光の反射を防ぐ無反射コートを2個の結晶について行
うため工数がかかりコストが高くなるという欠点があっ
た。
Next, in the method in which (GdBi) 3 (FeAlGa) 5 O 12 and (TbYbBi) 3 Fe 5 O 12 are superposed, (GdBi) 3 (FeAlGa) 5 O 12 becomes (TbYbBi) 3 Fe.
It is used as a temperature compensating crystal that reduces the temperature change of the Faraday rotation angle of 5 O 12 . However, since the temperature compensation effect is small, absorption of light increases as the thickness of the crystal increases, and it takes time to grow each crystal. Also, two crystals are required. Therefore, when actually used as an optical isolator, there is a drawback that the number of steps is increased and the cost is increased because polishing of the crystal and non-reflection coating for preventing light reflection on the crystal surface are performed on the two crystals.

問題点を解決するための手段 本発明は上記問題点を解決するため、(BixGd3-x)(Fe5-y
Gay)O12なるガーネット結晶において、0.7≦x≦1.3、
かつ1.0≦y≦1.7なる組成の結晶にBiを含む希土類ガー
ネットをエピタキシャル成長させた磁気光学結晶であ
る。
Means for Solving the Problems In order to solve the above problems, the present invention provides (Bi x Gd 3-x ) (Fe 5-y
In the garnet crystal of Ga y ) O 12 , 0.7 ≦ x ≦ 1.3,
Further, it is a magneto-optical crystal in which a rare earth garnet containing Bi is epitaxially grown on a crystal having a composition of 1.0 ≦ y ≦ 1.7.

作用 本発明により光アイソレータの使用温度範囲でそのファ
ラデー回転角の温度変化がゼロ又は温度の上昇とともに
|θ|が大きくなるような結晶を生産性よく安価に提供
できることを示す。
Effect The present invention shows that a crystal can be provided with good productivity and at low cost, in which the temperature change of the Faraday rotation angle of the optical isolator is zero in the operating temperature range, or | θ | increases with increasing temperature.

第3図にファラデー回転角θの温度特性改善のための原
理図を示す。鉄サイトの鉄原子を他の非磁性イオン(M
であらわす)でわずかに置換したもの、又はまったく置
換しないBi置換ガーネットのθの室温付近で負であり、
温度の上昇とともにゼロに近づく。この時ファラデー回
転角の温度変化は正となる(βが正)。次に鉄サイトを
非磁性イオンMで多量に置換したBi置換型希土類ガーネ
ット(希土類原素Re=Gd,Tb,Dyなど)ではθが正となり
温度の上昇とともにゼロに近づく(βが負)。したがっ
て、鉄サイトを多量の非磁性イオンで置換した大きな負
のβを持つ(BiR)3(FeM)5O12を温度補償用結晶に用い
て、正のβを持つBi置換ガーネットのθの温度変化を調
節することが可能である。
FIG. 3 shows a principle diagram for improving the temperature characteristic of the Faraday rotation angle θ. The iron atom of the iron site is replaced by another non-magnetic ion (M
Which is slightly substituted with, or is not substituted at all, is negative near θ at room temperature of Bi-substituted garnet,
It approaches zero as the temperature rises. At this time, the temperature change of the Faraday rotation angle becomes positive (β is positive). Next, in Bi-substituted rare earth garnets (rare earth elements Re = Gd, Tb, Dy, etc.) in which the iron sites are largely replaced by nonmagnetic ions M, θ becomes positive and approaches zero (β is negative) as the temperature rises. Therefore, using (BiR) 3 (FeM) 5 O 12 with a large negative β in which iron sites are replaced by a large amount of nonmagnetic ions as a temperature compensation crystal, the temperature of θ of Bi-substituted garnet with a positive β is It is possible to adjust for changes.

温度補償用結晶のファラデー回転係数をθF1、その結晶
の厚みをt1、Bi置換希土類ガーネットのファラデー回転
係数をθ2、その厚みをt2とすると、光アイソレータで
は |θ|=|θF1・t1+θF2・t2|=45deg とするように膜厚t1、t2を調整すれば、使用温度付近で
ファラデー回転角の温度変化のほとんどない結晶を得る
事ができる。さらに光アイソレータとLDとを一体化した
モジュールの場合、温度が上昇するとLDの中心波長が長
波長側にシフトするので、ガーネットのθの波長依存の
ため、|θ|が45degより小さくなる。この場合、θ=
−45deg,β<0.00deg・℃-1とすれば温度の上昇ととも
に|θ|が45degより大きくなり、したがってLDの中心
波長のシフトによるファラデー回転角の減少を調整でき
る。
If the Faraday rotation coefficient of the temperature compensation crystal is θ F1 , the thickness of the crystal is t 1 , the Faraday rotation coefficient of the Bi-substituted rare earth garnet is θ 2 , and its thickness is t 2 , then | θ | = | θ F1 in the optical isolator · t 1 + θ F2 · t 2 | = 45deg By adjusting the film thicknesses t 1 and t 2 so that the crystal can be obtained, the Faraday rotation angle hardly changes with temperature near the operating temperature. Further, in the case of a module in which the optical isolator and the LD are integrated, the central wavelength of the LD shifts to the long wavelength side as the temperature rises, and | θ | becomes smaller than 45 deg due to the wavelength dependence of θ of the garnet. In this case, θ =
If −45 deg, β <0.00 deg · ° C. −1 , | θ | becomes larger than 45 deg as the temperature rises. Therefore, it is possible to adjust the decrease of the Faraday rotation angle due to the shift of the LD central wavelength.

次に(BixGd3-x)(Fe5-yGay)O12において0.7≦x≦1.3,1.
0≦y≦1.7で温度補償効果が高く、したがって薄い結晶
でファラデー回転角の温度変化と光吸収の小さい結晶が
エピタキシャル成長できる事を示す。
Next, in (Bi x Gd 3-x ) (Fe 5-y Ga y ) O 12 , 0.7 ≦ x ≦ 1.3, 1.
It is shown that the temperature compensation effect is high when 0 ≦ y ≦ 1.7, and therefore a crystal with a small Faraday rotation angle temperature change and small light absorption can be epitaxially grown with a thin crystal.

温度補償用結晶として効果が大きいためには、使用温度
範囲(−20°〜60°)でファラデー回転角の大きさが正
でありかつ温度変化の割合が大きい(負の大きなβを持
つ)事が必要である。ファラデー回転角の温度変化はキ
ューリー温度Tcの近くで大きくなるため、Tcを使用温度
範囲より少し高め(80〜200℃程度)とする事が必要で
ある。
In order to be effective as a temperature compensating crystal, the Faraday rotation angle must be positive and the rate of temperature change must be large (has a large negative β) in the operating temperature range (-20 ° to 60 °). is necessary. Since the temperature change of the Faraday rotation angle becomes large near the Curie temperature T c , it is necessary to set T c slightly higher than the operating temperature range (about 80 to 200 ° C).

また光アイソレータの使用温度範囲でファラデー回転角
の符号が反転する補償温度Tcompがない事が必要であ
る。
It is also necessary that there is no compensation temperature T comp at which the sign of the Faraday rotation angle is reversed in the operating temperature range of the optical isolator.

第4図に(Bi1Gd2)(Fe5-yGay)O12について、Ga置換量y
とTc,Tcompとの関係を示す。y=1.0〜1.7でTc=190〜8
0℃となり、また光アイソレータの使用温度範囲−20〜6
0℃にTcompがない事がわかる。
Fig. 4 shows that for (Bi 1 Gd 2 ) (Fe 5-y Ga y ) O 12 , the Ga substitution amount y
And the relationship between T c and T comp . y = 1.0 to 1.7 and T c = 190 to 8
It becomes 0 ℃, and the operating temperature range of the optical isolator is -20 to 6
You can see that there is no T comp at 0 ° C.

Tcが80〜190℃と低い事でこの結晶の温度補償用効果は
大きく、したがって、薄い結晶で温度補償が可能とな
り、結晶が薄いので光の吸収も小さくする事が可能とな
る。
Since T c is as low as 80 to 190 ° C., the temperature compensating effect of this crystal is large, and therefore temperature compensation can be performed with a thin crystal, and light absorption can be reduced because the crystal is thin.

カーネット結晶において、クラックや欠陥のない膜をエ
ピタキシャル成長するためには基板との格子不整合を|
Δa|≦0.02Å程度とする必要がある。現在容易に入手で
きる基板の格子定数はa=12.490〜12.500ÅのCa-Mg-Zr
置換GGG基板、又はa=12.509ÅのNdGG基板である。
In carnet crystals, in order to epitaxially grow a film without cracks or defects, a lattice mismatch with the substrate must be used.
It is necessary to set Δa | ≦ 0.02Å. Currently available substrates have a lattice constant of a = 12.490-12.500Å Ca-Mg-Zr
Substitute GGG substrate or NdGG substrate with a = 12.509Å.

第5図に(BixGd3-x)(Fe5-yGay)O12の格子定数のx,y依存
性を示す。0.7≦x≦1.3,1.0≦y≦1.7の時は12.477≦
a≦12.517Åとなり、基板との格子不整合は最大0.013
Åとなるが、基板との格子定数差|Δa|<0.02Å程度ま
ではクラックや欠陥なしにエピタキシャル成長可能であ
るため、問題なく温度補償結晶としてエピタキシャル膜
を得る事ができる。
In FIG. 5 (Bi x Gd 3-x) (Fe 5-y Ga y) of the lattice constant of the O 12 x, indicating a y-dependent. 12.477 ≦ when 0.7 ≦ x ≦ 1.3 and 1.0 ≦ y ≦ 1.7
a ≦ 12.517Å, the lattice mismatch with the substrate is 0.013 at maximum.
However, since epitaxial growth is possible without cracks and defects up to a lattice constant difference of about | Δa | <0.02Å with the substrate, an epitaxial film can be obtained as a temperature-compensated crystal without problems.

さらにこの温度補償用結晶の上にBi置換型ガーネット結
晶をエピタキシャル成長すれば、温度補償用結晶とBi置
換型ガーネット結晶を別々に基板に成長する場合に比べ
て、基板が1枚で成長できる事、切り出したチップの無
反射コートや、鏡面研磨が2個の結晶を組み合わせる場
合の半分ですみ、光アイソレータを作成する場合の工数
を減らす事が可能となり低価格な光アイソレータ用結晶
を実現できる。
Furthermore, if a Bi-substitution garnet crystal is epitaxially grown on this temperature-compensating crystal, a single substrate can be grown as compared with the case where the temperature-compensation crystal and the Bi-substitution garnet crystal are separately grown on the substrate. A non-reflective coating of the cut chip and mirror polishing are half of the case of combining two crystals, and it is possible to reduce the number of man-hours when creating an optical isolator and realize a low-cost optical isolator crystal.

実施例 実施例1 本発明の第1の実施例として(Bi1Gd2)(Fe3.5Ga1.5)O12
上に(Bi1.2Yb0.6Gd1.2)Fe5O12をエピタキシャル成長し
た場合について述べる。PbO-B2O3‐Bi2O3系融剤を用
い、Ca-Ma-Zr置換型GGG、格子定数a=12.497Åの基板
の上に、(Bi1Gd2)(Fe3.5Ga1.5)O12を10μm成長した。
また別に(Bi1.2Yb0.6Gd1.2)Fe5O12を10μm成長して、
それぞれの特性を測定した。
Examples Example 1 As a first example of the present invention, (Bi 1 Gd 2 ) (Fe 3.5 Ga 1.5 ) O 12
The case of epitaxially growing (Bi 1.2 Yb 0.6 Gd 1.2 ) Fe 5 O 12 will be described above. Using a PbO-B 2 O 3 -Bi 2 O 3 based flux, on a substrate with Ca-Ma-Zr substitution type GGG and lattice constant a = 12.497 Å, (Bi 1 Gd 2 ) (Fe 3.5 Ga 1.5 ). O 12 was grown to 10 μm.
Separately, (Bi 1.2 Yb 0.6 Gd 1.2 ) Fe 5 O 12 was grown to 10 μm,
Each property was measured.

・(Bi1Gd2)(Fe3.5Ga1.5)O12 ・(Bi1.2Yb0.6Gd.12)Fe5O12 これより温度補償用結晶(Bi1Gd2)(Fe3.5Ga1.5)O12の結
晶の膜厚t1をt1=167μm、 (Bi1.2Yb0.6Gd1.2)Fe5O12をt2をt2=303μm成長すれ
ば、 回転角:θ=θF1・t1+θF2・t2=−45 deg となる。またこれらの格子定数は一致しており|Δa|<
0.02Åの条件を満たすため、エピタキシャル成長可能で
ある。そこで実際にCa-Mg-Zr置換GGGの上に(Bi1Gd2)(Fe
3.5Ga1.5)O12を170μm成長し、その上に(Bi1.2Yb0.6Gd
1.2)Fe5O12を305μm成長してファラデー回転角の温度
変化を測定した結果を第1図に示す。(Bi1.2Yb0.6G
d1.2)Fe5O12はβ=0.06deg・℃-1であるのに対し温度補
償用結晶に成長した場合(T=−20〜60℃)でβ0.00
deg・℃-1の結晶を得た。
・ (Bi 1 Gd 2 ) (Fe 3.5 Ga 1.5 ) O 12 ・ (Bi 1.2 Yb 0.6 Gd .12 ) Fe 5 O 12 From this, the film thickness t 1 of the temperature compensating crystal (Bi 1 Gd 2 ) (Fe 3.5 Ga 1.5 ) O 12 is t 1 = 167 μm, and (Bi 1.2 Yb 0.6 Gd 1.2 ) Fe 5 O 12 is t 2 t 2 = 303 μm, the rotation angle: θ = θ F1 · t 1 + θ F2 · t 2 = −45 deg Becomes Also, these lattice constants are the same, and | Δa | <
Since the condition of 0.02Å is satisfied, epitaxial growth is possible. Therefore, on top of Ca-Mg-Zr-substituted GGG, (Bi 1 Gd 2 ) (Fe
3.5 Ga 1.5 ) O 12 was grown to 170 μm, and (Bi 1.2 Yb 0.6 Gd
Fig. 1 shows the results of measuring the temperature change of the Faraday rotation angle after growing 1.2 ) Fe 5 O 12 305 μm. (Bi 1.2 Yb 0.6 G
d 1.2 ) Fe 5 O 12 has β = 0.06 deg ・ ° C -1 , while β0.00 when grown as a temperature compensating crystal (T = -20 to 60 ° C).
A crystal with a deg. ° C. -1 was obtained.

実施例2 実施例1と同じ条件の融剤よりCa-Mg-Zr置換GGG基板上
に(Bi1Gd2)(Fe3.5Ga1.5)O12を230μm、(Bi1.2Yb0.6Gd
1.2)Fe5O12を325μm成長した結果、 回転角:θ=−45 deg (T=20℃) を得た。この時|θ|は60℃で45.8degとなり、温度の
増加とともにファラデー回転角の絶対値の大きくなる結
晶が得られた。
Example 2 (Bi 1 Gd 2 ) (Fe 3.5 Ga 1.5 ) O 12 230 μm and (Bi 1.2 Yb 0.6 Gd) on a Ca-Mg-Zr-substituted GGG substrate from the flux under the same conditions as in Example 1
1.2 ) As a result of growing Fe 5 O 12 by 325 μm, rotation angle: θ = −45 deg (T = 20 ° C.) Got At this time, | θ | was 45.8 ° at 60 ° C, and a crystal was obtained in which the absolute value of the Faraday rotation angle increased with increasing temperature.

実施例3 本発明の第2の実施例として、 (Bi1.1Gd1.9)(Fe3.7Ga1.3)O12上に(Bi0.9Gd2.1)Fe5O12
を成長した場合について述べる。それぞれの結晶の特性
は ・(Bi1.2Gd1.8)(Fe3.7Ga1.3)O12 ・(Bi0.9Gd2.1)Fe5O12 であった。そこでNdGGを基板として、 (Bi1.2Gd1.8)(Fe3.7Ga1.3)O12を215μm、 (Bi0.9Gd2.1)Fe5O12を430μmエピタキシャル成長し、
θ=−45deg,β=0.00deg・℃-1を温度範囲−20〜60℃
について実現した。
As a second example of the third embodiment the present invention, (Bi 1.1 Gd 1.9) ( Fe 3.7 Ga 1.3) O 12 on a (Bi 0.9 Gd 2.1) Fe 5 O 12
The case of growing is described. The characteristics of each crystal are: (Bi 1.2 Gd 1.8 ) (Fe 3.7 Ga 1.3 ) O 12 ・ (Bi 0.9 Gd 2.1 ) Fe 5 O 12 Met. Therefore, using NdGG as a substrate, (Bi 1.2 Gd 1.8 ) (Fe 3.7 Ga 1.3 ) O 12 was grown 215 μm and (Bi 0.9 Gd 2.1 ) Fe 5 O 12 was grown 430 μm.
θ = -45deg, β = 0.00deg ・ ° C -1 in temperature range -20 to 60 ° C
Realized about.

なお実施例としては、Bi置換型ガーネットとして(Bi1.2
Yb0.6Gd1.2)Fe5O12,(Bi0.9Gd2.1)Fe5O12について示した
が、Biを含むガーネットであれば他の組成のものでもよ
く、例えば(BiTb)3Fe5O12,(BiGdLu)3Fe5O12,Gaをわずか
に含む(BiGdYb)3(Fe4.8Ga0.2)O12等でもよい。
As an example, as a Bi substitution type garnet (Bi 1.2
Yb 0.6 Gd 1.2 ) Fe 5 O 12 , (Bi 0.9 Gd 2.1 ) Fe 5 O 12 is shown, but garnet containing Bi may have other composition, for example, (BiTb) 3 Fe 5 O 12 ,. (BiGdLu) 3 Fe 5 O 12 and (BiGdYb) 3 (Fe 4.8 Ga 0.2 ) O 12 containing a small amount of Ga may be used.

発明の効果 以上述べてきたように、本発明によれば、一個の磁気光
学結晶で、ファラデー回転角の温度変化のない、又は温
度が上昇するとファラデー回転角の絶対値が大きくなる
ような結晶を生産性よく安価に提供する事が可能とな
り、その工業的価値は高い。
EFFECTS OF THE INVENTION As described above, according to the present invention, with one magneto-optical crystal, there is no temperature change in the Faraday rotation angle, or a crystal in which the absolute value of the Faraday rotation angle increases as the temperature rises. It can be provided with high productivity and at low cost, and its industrial value is high.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明による磁気光学結晶のファラデー回転角
θの温度特性図、第2図はθの温度変化によるアイソレ
ーション比の劣化を示す特性図、第3図はθの温度変化
をなくすための原理を説明するための特性図、第4図は
キューリー温度,補償温度のGa置換量依存性を示す特性
図、第5図はBi置換量とGa置換量と格子定数の関係を示
す特性図である。
FIG. 1 is a temperature characteristic diagram of the Faraday rotation angle θ of the magneto-optical crystal according to the present invention, FIG. 2 is a characteristic diagram showing deterioration of the isolation ratio due to temperature change of θ, and FIG. 3 is for eliminating temperature change of θ. 4 is a characteristic diagram for explaining the principle of the above, FIG. 4 is a characteristic diagram showing the Ga substitution amount dependency of Curie temperature and compensation temperature, and FIG. 5 is a characteristic diagram showing the relationship between Bi substitution amount, Ga substitution amount and lattice constant. Is.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】(BixGd3-x)(Fe5-yGay)O12なる組成式にお
いて、0.7≦x≦1.3かつ1.0≦y≦1.7なる第1のガーネ
ット結晶に、Biを含む希土類ガーネット結晶をエピタキ
シャル成長させて第2のガーネット結晶を形成し、前記
第1のガーネット結晶と前記第2のガーネット結晶にお
けるファラデー回転係数及び厚みの関係が |θF1・t1+θF2・t2|=45deg (ここで、θF1、θF2は第1及び第2のガーネット結晶
のファラデー回転係数、t1、t2:第1及び第2のガーネ
ット結晶の厚み) である事を特徴とする磁気光学結晶。
1. A (Bi x Gd 3-x) (Fe 5-y Ga y) O 12 having a composition formula, a 0.7 ≦ x ≦ 1.3 and 1.0 ≦ y ≦ 1.7 becomes first garnet crystal, including Bi A second garnet crystal is formed by epitaxially growing a rare earth garnet crystal, and the relationship between the Faraday rotation coefficient and the thickness of the first garnet crystal and the second garnet crystal is | θ F1 · t 1 + θ F2 · t 2 | = 45deg (Where, θ F1 and θ F2 are Faraday rotation coefficients of the first and second garnet crystals, and t 1 and t 2 are thicknesses of the first and second garnet crystals). .
JP29943886A 1986-12-16 1986-12-16 Magneto-optical crystal Expired - Fee Related JPH0688876B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29943886A JPH0688876B2 (en) 1986-12-16 1986-12-16 Magneto-optical crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29943886A JPH0688876B2 (en) 1986-12-16 1986-12-16 Magneto-optical crystal

Publications (2)

Publication Number Publication Date
JPS63151699A JPS63151699A (en) 1988-06-24
JPH0688876B2 true JPH0688876B2 (en) 1994-11-09

Family

ID=17872574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29943886A Expired - Fee Related JPH0688876B2 (en) 1986-12-16 1986-12-16 Magneto-optical crystal

Country Status (1)

Country Link
JP (1) JPH0688876B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2567697B2 (en) * 1989-03-29 1996-12-25 株式会社トーキン Faraday rotation device

Also Published As

Publication number Publication date
JPS63151699A (en) 1988-06-24

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