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JPH0689405B2 - Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density - Google Patents
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JPH0689405B2 - Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density - Google Patents

Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density

Info

Publication number
JPH0689405B2
JPH0689405B2 JP1079992A JP7999289A JPH0689405B2 JP H0689405 B2 JPH0689405 B2 JP H0689405B2 JP 1079992 A JP1079992 A JP 1079992A JP 7999289 A JP7999289 A JP 7999289A JP H0689405 B2 JPH0689405 B2 JP H0689405B2
Authority
JP
Japan
Prior art keywords
annealing
temperature
steel sheet
magnetic flux
flux density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1079992A
Other languages
Japanese (ja)
Other versions
JPH02258930A (en
Inventor
義行 牛神
正 中山
延幸 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP1079992A priority Critical patent/JPH0689405B2/en
Priority to EP19900106018 priority patent/EP0390142B2/en
Priority to DE1990627553 priority patent/DE69027553T3/en
Publication of JPH02258930A publication Critical patent/JPH02258930A/en
Priority to US07/770,775 priority patent/US5186762A/en
Publication of JPH0689405B2 publication Critical patent/JPH0689405B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

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  • Manufacturing Of Steel Electrode Plates (AREA)
  • Soft Magnetic Materials (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は軟磁性材料として電気機器の鉄芯として用いら
れる一方向性電磁鋼板の製造方法に関するものである。
Description: TECHNICAL FIELD The present invention relates to a method for producing a grain-oriented electrical steel sheet used as an iron core of an electric device as a soft magnetic material.

(従来の技術) 一方向性電磁鋼板はミラー指数で{110}〈001〉方位
(いわゆるゴス方位)をもつ結晶粒より構成された通常
4.5%以下のSiを含有する板厚0.10〜0.35mmの鋼板であ
る。この鋼板は磁気特性として、励磁特性と鉄損特性が
優れていることが要求され、そのためには結晶粒の方位
をゴス方位に高度に揃えることが重要である。このゴス
方位への極めて高い集積化は、二次再結晶と呼ばれるカ
タストロフィックな粒成長現象を利用して達成される。
(Prior Art) A grain-oriented electrical steel sheet is usually composed of crystal grains having {110} <001> orientation (so-called Goth orientation) in Miller index.
A steel plate having a thickness of 0.10 to 0.35 mm and containing 4.5% or less of Si. This steel sheet is required to have excellent magnetic excitation characteristics and iron loss characteristics, and for that purpose, it is important to highly align the crystal grain orientation with the Goss orientation. The extremely high integration in the Goss orientation is achieved by utilizing a catastrophic grain growth phenomenon called secondary recrystallization.

二次再結晶を制御するためには、二次再結晶前の一次再
結晶組織の調整と、インヒビターと呼ばれる微細析出物
もしくは粒界偏析型の元素の調整が必須のものである。
このインヒビターは、一次再結晶組織のなかで、ゴス方
位以外の一次再結晶粒の成長を抑え、ゴス方位粒を選択
的に成長させる機能をもつ。
In order to control the secondary recrystallization, it is essential to adjust the primary recrystallization structure before the secondary recrystallization and the adjustment of fine precipitates or grain boundary segregation type elements called inhibitors.
This inhibitor has a function of suppressing the growth of primary recrystallized grains other than the Goss orientation in the primary recrystallized structure and selectively growing the Goss oriented grains.

析出物として代表的なものとしては、M.F.Littmann(特
公昭30−3651号公報)及びJ.E.May,D.Turnbull(Trans.
Met.Soc.AIME212(1958号)p769/781)はMnSを、田口,
板倉(特公昭40−15644号公報)はAlNを、今中ら(特公
昭51−13469号公報)はMnSeを、小松ら(特公昭62−452
85号公報)は(Al,Si)Nを提示している。
Typical examples of the precipitate include MFLittmann (Japanese Patent Publication No. Sho 30-3651) and JEMay, D. Turnbull (Trans.
Met.Soc.AIME212 (1958 No. p769 / 781) is MnS, Taguchi,
Itakura (Japanese Patent Publication No. 40-15644) uses AlN, Imanaka et al. (Japanese Patent Publication No. 51-13469) uses MnSe, Komatsu et al. (Japanese Patent Publication No. 62-452).
No. 85) presents (Al, Si) N.

一方、粒界偏析型の元素としては、斎藤ら(日本金属学
会誌27(1963年)p186/195)はPb,Sb,Nb,Ag,Te,Se,S等
を提示しているが、工業的にはいずれも析出物型インヒ
ビターの補助的なものとして使用されているにすぎな
い。
On the other hand, as the grain boundary segregation type element, Saito et al. (Journal of the Japan Institute of Metals 27 (1963) p186 / 195) proposed Pb, Sb, Nb, Ag, Te, Se, S, etc. All of them are merely used as an adjunct to precipitate-type inhibitors.

これらの析出物がインヒビターとしての機能を発揮する
上で必要な条件は必ずしも明確ではないが、松岡(鉄と
鋼53(1967年)p1007/1023),黒木ら(日本金属学会誌
43(1979年)p175/181,44(1980年)p419/424)の結果
をまとめると、次のように考えられる。
Although the conditions necessary for these precipitates to function as inhibitors are not always clear, Matsuoka (Iron and Steel 53 (1967) p1007 / 1023), Kuroki et al.
43 (1979) p175 / 181,44 (1980) p419 / 424) can be summarized as follows.

(i)二次再結晶前に一次再結晶粒の粒成長を抑えるに
充分な量の微細析出物が存在すること。
(I) The presence of fine precipitates in an amount sufficient to suppress grain growth of primary recrystallized grains before secondary recrystallization.

(ii)析出物の大きさがある程度大きく、二次再結晶焼
鈍時にあまり急激に熱的変化しないこと。
(Ii) The size of the precipitates is large to some extent and does not change so rapidly during secondary recrystallization annealing.

現在、工業生産されている代表的な一方向性電磁鋼板の
製造法としては、3種類ある。
Currently, there are three types of typical methods for producing unidirectional electrical steel sheets that are industrially produced.

第一の技術は、M.F.Littmannにより、特公昭30−3651号
公報に示されたMnSを用いた二回冷延工程によるもので
あり、第二の技術は田口,板倉により、特公昭40−1564
4号公報に示されたAlN+MnSを用いた最終冷間圧延率を8
0%以上の強圧下とする工程によるものであり、第三の
技術は、今中らにより特公昭51−13469号公報に示され
たMnS(またはMnSe)+Sbを用いた二回冷延工程による
ものである。
The first technique is a double cold rolling process using MnS disclosed in Japanese Patent Publication No. Sho 30-3651 by MF Littmann, and the second technique is Japanese Patent Publication No. 40-1564 by Taguchi and Itakura.
The final cold rolling rate using AlN + MnS disclosed in Japanese Patent No.
The third technique is a double cold rolling process using MnS (or MnSe) + Sb disclosed in Japanese Patent Publication No. 51-13469 by Konaka et al. It is a thing.

これらの技術はいずれも、析出物の量の確保とその微細
化の要件を満たすために、熱延工程での高温スラブ加熱
によるインヒビター作り込みを基本技術としている。
In all of these technologies, in order to satisfy the requirements for securing the amount of precipitates and their refinement, the basic technology is the incorporation of inhibitors by high temperature slab heating in the hot rolling process.

すなわち、スラブ加熱温度は第一の技術では1260℃以
上、第二の技術では特開昭48−51852号公報に示すよう
にSi量によって異なるが、3%Siの場合は1350℃以上、
第三の技術では特開昭51−20716号公報に示されるよう
に1230℃以上、特に高磁束密度が得られる実施例では13
20℃といった極めて高い温度で焼鈍することにより、粗
大に存在する析出物を一旦溶体化し、その後熱間圧延
中、あるいはそれに続く熱処理によって、各種析出物の
微細化を行っている。
That is, the slab heating temperature is 1260 ° C. or higher in the first technique, and in the second technique it depends on the amount of Si as shown in JP-A-48-51852.
In the third technique, as shown in JP-A-51-20716, the temperature is 1230 ° C. or higher, and in the embodiment in which a high magnetic flux density is obtained, it is 13
By annealing at an extremely high temperature such as 20 ° C., coarse precipitates are once solution-treated, and then various precipitates are refined during hot rolling or by subsequent heat treatment.

ところが、これらの析出物の制御は極めて困難であり、
その改善案として特公昭54−14568号公報には、焼鈍分
離剤に窒化クロム,窒化チタン,窒化バナジウム等の窒
化物を添加することにより、二次再結晶が行なわれる仕
上焼鈍中の雰囲気の窒素分圧を確保する方法が、また特
公昭53−50008号公報にはFe2S等の硫化物を添加するこ
とにより硫黄分圧を確保し、析出物の分解を抑制するこ
とにより、二次再結晶を安定化する方法が提案されてい
る。
However, control of these precipitates is extremely difficult,
As a proposal for improvement, Japanese Patent Publication No. 14568/1979 discloses that nitrogen in a finish annealing atmosphere in which secondary recrystallization is performed by adding a nitride such as chromium nitride, titanium nitride or vanadium nitride to an annealing separator. A method for securing a partial pressure is also disclosed in Japanese Patent Publication No. 53-50008, by adding a sulfide such as Fe 2 S to secure a sulfur partial pressure and suppressing the decomposition of the precipitates, and Methods have been proposed for stabilizing crystals.

しかしながら、これらの改良法をもってしても、最高磁
性の製品を安定して製造するには至っていない。
However, even with these improved methods, it has not been possible to stably produce the highest magnetic product.

これは、本質的な問題として工業的には、高温スラブ加
熱によりコイルの長手方向・幅方向の全領域に一定サイ
ズ、一定量の析出物を均一に分散させ、かつ二次再結晶
直前まで変化させずに保っておくことが事実上、不可能
であるからである。
Industrially, this is an essential problem in that high-temperature slab heating uniformly disperses precipitates of a certain size and a certain amount in the entire lengthwise and widthwise direction of the coil, and changes until just before secondary recrystallization. It is practically impossible to keep it without doing so.

すなわち、析出現象は非平衡状態で行なわれており、そ
れ以前の熱履歴、歪履歴の影響を強く受けるものであ
る。実際のスラブは各部位によって熱履歴、歪履歴が異
なっており、かつスラブ自体が板厚方向の成分のマクロ
偏析、局所的なα相,γ相の分散により不均一な結晶組
織となっているからである。
That is, the precipitation phenomenon is performed in a non-equilibrium state, and is strongly influenced by the thermal history and strain history before that. The actual slab has different thermal history and strain history depending on each part, and the slab itself has a non-uniform crystal structure due to macrosegregation of components in the plate thickness direction and local dispersion of α phase and γ phase. Because.

従って、インヒビター制御を基本技術とする一方向性電
磁鋼板の製造法は根本的に工業的な安定性を欠くもので
ある。
Therefore, the method for producing a grain-oriented electrical steel sheet based on inhibitor control is fundamentally lacking in industrial stability.

(発明が解決しようとする課題) 本発明は、上記従来技術における問題点を解決し、磁気
特性の優れた一方向性電磁鋼板を工業的に安定して製造
することができるプロセスを提供することを目的として
なされた。
(Problems to be Solved by the Invention) The present invention solves the above-mentioned problems in the prior art and provides a process capable of industrially and stably producing a grain-oriented electrical steel sheet having excellent magnetic properties. Was made for the purpose.

(課題を解決するための手段) 本発明は、一次再結晶組織と二次再結晶温度の規定によ
り、一次再結晶組織の熱的変化挙動を制御することを主
眼とする従来法と思想を全く異にする高い磁束密度の製
品を安定して製造する方法を提案するものである。
(Means for Solving the Problem) The present invention has no conventional method and idea whose main purpose is to control the thermal change behavior of the primary recrystallization structure by defining the primary recrystallization structure and the secondary recrystallization temperature. It proposes a method for stably producing different products having a high magnetic flux density.

すなわち本発明は、重量%でSi;1.8〜4.8%,酸可溶性A
l;0.012〜0.050%,N≦0.01%,残部Fe及び不可避的不純
物からなる鋼板を、一回もしくは中間焼鈍をはさむ二回
以上の冷間圧延工程によって最終板厚とし、次いで一次
再結晶焼鈍を行った後焼鈍分離剤を塗布し、仕上焼鈍を
施す一方向性電磁鋼板の製造法において、最終冷間圧延
率を80%以上とし、かつ仕上焼鈍時に、一次再結晶粒の
平均粒径D(μm)に応じて、下記不等式の領域内の温
度T(℃)において、二次再結晶粒を事実上完全に成長
させ、その後純化させることを特徴とする磁束密度の高
い一方向性電磁鋼板の製造方法を要旨とするものであ
る。
That is, in the present invention, Si by weight%; 1.8 to 4.8%, acid-soluble A
l; 0.012 to 0.050%, N ≤ 0.01%, balance Fe and unavoidable impurities are used as the final plate thickness by one or two or more cold rolling steps with intermediate annealing, and then primary recrystallization annealing is performed. In the method for producing a unidirectional electrical steel sheet, in which the annealing separator is applied and then finish annealing is performed, the final cold rolling rate is set to 80% or more, and the average grain size D of the primary recrystallized grains during the finish annealing ( μm) at a temperature T (° C.) in the region of the following inequality, the secondary recrystallized grains are practically completely grown, and then purified. The main point is the manufacturing method.

T≦20D+700 1000≦T≦1100 以下、本発明について詳細に説明する。T ≦ 20D + 700 1000 ≦ T ≦ 1100 The present invention will be described in detail below.

本発明者等は、二次再結晶粒と一次再結晶粒の粒成長挙
動についての詳細な研究より、一次再結晶粒の集合組織
・粒組織及び二次再結晶温度を規定し、その熱的粒成長
挙動を制御することにより、ゴス方位粒を優先的に成長
させることができるという新知見を得た。
The present inventors have defined the texture and grain structure of the primary recrystallized grains and the secondary recrystallized temperature from the detailed study of the grain growth behavior of the secondary recrystallized grains and the primary recrystallized grains, and their thermal We obtained new knowledge that goss-oriented grains can be preferentially grown by controlling grain growth behavior.

かかる知見は、以下の実験によって得られたものであ
る。
Such knowledge is obtained by the following experiments.

重量%で、Si;3.2〜3.3%,熱可溶性Al;0.010〜0.045
%,N;0.0030〜0.0090%,C;0.020〜0.090%,Mn;0.070〜
0.500%,S;0.0030〜0.0300%を含有し、残部Fe及び不可
避的不純物からなるスラブを1150〜1400℃に加熱し、2.
3mm厚の熱延板に熱延し、900〜1200℃の温度で焼鈍し、
88%の圧下率で冷間圧延を行い、0.285mmの最終板厚と
した。この冷延板を830〜1000℃の温度で脱炭を兼ねる
一次再結晶焼鈍を行い、次いでMgOを主成分とする焼鈍
分離剤を上記処理鋼板に塗布した後、N210%+H290%の
雰囲気中で900℃迄20℃/hrの速度で昇温し、次いで950
〜1200℃の温度域の所定の温度迄夫々急速昇温し、該所
定温度で20時間焼鈍し、二次再結晶粒を充分に成長させ
た。
% By weight, Si; 3.2-3.3%, heat-soluble Al; 0.010-0.045
%, N; 0.0030 to 0.0090%, C; 0.020 to 0.090%, Mn; 0.070 to
A slab containing 0.500%, S; 0.0030 to 0.0300% and the balance Fe and unavoidable impurities is heated to 1150 to 1400 ° C, and 2.
Hot rolled to a 3 mm thick hot rolled sheet, annealed at a temperature of 900 ~ 1200 ℃,
Cold rolling was performed at a rolling reduction of 88% to obtain a final plate thickness of 0.285 mm. This cold-rolled sheet was subjected to primary recrystallization annealing that also serves as decarburization at a temperature of 830 to 1000 ° C., and then an annealing separator containing MgO as a main component was applied to the treated steel sheet, followed by N 2 10% + H 2 90% In an atmosphere of up to 900 ℃ at a rate of 20 ℃ / hr, then 950
The temperature was rapidly raised to a predetermined temperature in the temperature range of up to 1200 ° C. and annealed at the predetermined temperature for 20 hours to sufficiently grow the secondary recrystallized grains.

900℃の時点で試料を一部引出して一次再結晶組織の調
査を行ったが、この時点では粒径変化は見出せなかっ
た。
At 900 ° C, a part of the sample was pulled out to investigate the primary recrystallization structure, but no grain size change was found at this time.

こうして得られた製品の磁束密度(B8値)と一次再結晶
粒の平均直径と二次再結晶温度の関係を第1図に示す。
Fig. 1 shows the relationship between the magnetic flux density (B 8 value) of the product thus obtained, the average diameter of the primary recrystallized grains, and the secondary recrystallization temperature.

第1図から明らかなように、一次再結晶粒の平均粒径D
(μm)と二次再結晶温度T(℃)に対して T≦20D+700 (1) 1000≦T≦1100 (2) の範囲内で、磁束密度(B8値)が1.90Tを超える製品が
得られている。この理由については、本発明者等は次の
ように推察している。
As is apparent from FIG. 1, the average grain size D of the primary recrystallized grains
(Μm) and secondary recrystallization temperature T (℃) Within the range of T ≦ 20D + 700 (1) 1000 ≦ T ≦ 1100 (2), magnetic flux density (B 8 value) exceeding 1.90T is obtained. Has been. The present inventors presume the reason for this as follows.

二次再結晶は、一次再結晶組織の熱的変化とインヒビタ
ーの熱的変化の競合現象である。すなわち仕上焼鈍中に
インヒビターが弱まると共に、ゴス近傍の方位粒が点状
に分散して核化し成長を始める。この二次再結晶粒の成
長速度V(cm/sec)は一般に Q:粒成長の活性化エネルギー R:ガス定数 と表わされる。
Secondary recrystallization is a competitive phenomenon between the thermal change of the primary recrystallization structure and the thermal change of the inhibitor. That is, the inhibitor weakens during the finish annealing, and the oriented grains in the vicinity of the goth are dispersed in a dot shape to nucleate and start growth. The growth rate V (cm / sec) of this secondary recrystallized grain is generally Q: Activation energy of grain growth R: Expressed as gas constant.

従って、一次再結晶粒径(D)が大きく、焼鈍温度
(T)が低いと、二次再結晶粒の成長速度は遅く、相対
的に成長速度の速い尖鋭なゴス方位粒のみが、インヒビ
ターの抑制力をふりきって成長することができるように
なるが、一次再結晶粒径(D)が小さく、焼鈍温度
(T)が高くなるとゴス方位近傍の分散方位も成長し、
集積度が低下してしまう。これが(1)式により一次再
結晶粒径(D)に応じて、二次再結晶温度(T)を規定
する理由である。
Therefore, if the primary recrystallized grain size (D) is large and the annealing temperature (T) is low, the growth rate of the secondary recrystallized grains is slow, and only the sharp Goss-oriented grains having a relatively high growth rate are the inhibitor. Although it becomes possible to grow while suppressing the restraining force, when the primary recrystallized grain size (D) is small and the annealing temperature (T) is high, the dispersion orientation near the Goss orientation also grows,
The degree of integration will decrease. This is the reason for defining the secondary recrystallization temperature (T) according to the primary recrystallization grain size (D) by the equation (1).

また、(2)式については、最終圧下率80%以上という
工程により規定される一次再結晶集合組織に対して、ゴ
ス方位粒を優先成長させる最適の温度域と推測される。
Further, with regard to the equation (2), it is assumed that the optimum temperature range in which the Goss-oriented grains are preferentially grown with respect to the primary recrystallization texture defined by the process of the final rolling reduction of 80% or more.

すなわち、最終冷間圧延率50〜90%の材料を、一次再結
晶粒の平均粒径が22〜24μmとなるように一次再結晶焼
鈍し、仕上焼鈍において1050℃の温度で二次再結晶粒を
充分に成長させたところ、第3図及び第4図に示すよう
に圧下率80%以上で尖鋭なゴス方位粒が優先成長し、磁
束密度の高い製品が得られた。これら材料の一次再結晶
集合組織を調査したところ、第2図に示すように、圧下
率80%以上のものは{111}〈112〉方位を主方位とする
集合組織となっている。
That is, a material having a final cold rolling rate of 50 to 90% is subjected to primary recrystallization annealing so that the average grain size of primary recrystallized grains becomes 22 to 24 μm, and secondary recrystallized grains are subjected to finish annealing at a temperature of 1050 ° C. Was grown sufficiently, as shown in FIGS. 3 and 4, sharp Goss-oriented grains were preferentially grown at a rolling reduction of 80% or more, and a product having a high magnetic flux density was obtained. When the primary recrystallized textures of these materials were investigated, as shown in FIG. 2, those having a reduction rate of 80% or more have a texture with the {111} <112> orientation as the main orientation.

以上述べたように、一次再結晶組織の集合組織を最終冷
間圧延率で規定し、かつ一次再結晶組織の平均粒径と二
次再結晶温度により、その熱的粒成長挙動を規定するこ
とにより、一次再結晶粒の中から尖鋭なゴス方位粒を優
先成長させることができる。
As described above, the texture of the primary recrystallization structure is defined by the final cold rolling rate, and the thermal grain growth behavior is defined by the average grain size of the primary recrystallization structure and the secondary recrystallization temperature. Thereby, sharp Goss-oriented grains can be preferentially grown from the primary recrystallized grains.

次に、インヒビターについての検討を行った。一次再結
晶粒径は一次再結晶焼鈍の条件(温度・時間)によって
決定されるが、より本質的には一次再結晶焼鈍前のイン
ヒビターに大きく影響される。すなわち、二次再結晶に
必要なインヒビターを従来のように高温スラブ加熱によ
って、一次再結晶焼鈍前に作り込んでいると、一次再結
晶焼鈍時に、本発明の粒径(D≧15μm)を得るために
は、焼鈍温度を高めるか、焼鈍時間を長くする必要があ
り、エネルギー・コストを高めてしまう。更には、一次
再結晶焼鈍中に異常粒成長が起こり、二次再結晶が不安
定になってしまう場合もある。
Next, the inhibitor was examined. The primary recrystallization grain size is determined by the conditions (temperature and time) of the primary recrystallization annealing, but more essentially, it is greatly influenced by the inhibitor before the primary recrystallization annealing. That is, when the inhibitor required for secondary recrystallization is built in by high temperature slab heating before the primary recrystallization annealing as in the conventional case, the grain size (D ≧ 15 μm) of the present invention is obtained during the primary recrystallization annealing. Therefore, it is necessary to increase the annealing temperature or lengthen the annealing time, which increases energy cost. Further, abnormal grain growth may occur during the primary recrystallization annealing, and the secondary recrystallization may become unstable.

従って、インヒビターについては、従来の方法とは逆に
AlNを完全には溶体化させない低温域でスラブ加熱を行
い、一次再結晶焼鈍前のインヒビターを弱めておき、一
次再結晶組織の調整を行った後、窒化により二次再結晶
に必要なインヒビターを作り込むことが合理的である。
Therefore, for inhibitors, the reverse of the conventional method
Slab heating is performed in a low temperature range where AlN is not completely solution-treated, the inhibitor before primary recrystallization annealing is weakened, the primary recrystallization structure is adjusted, and then the inhibitor required for secondary recrystallization is nitrided. It is rational to make it.

AlNの溶体化温度は、鋼中に含まれるAl量とN量の積で
決まり、代表的には岩山等(Journal of Magnetism and
Magnetic Materials 19(1980年)p15/17)により log〔Al%〕〔N%〕=−10062/T+2.72 と示されている。
The solution temperature of AlN is determined by the product of the amount of Al and the amount of N contained in steel, and is typically Iwayama (Journal of Magnetism and
Magnetic Materials 19 (1980) p15 / 17) shows that log [Al%] [N%] =-10062 / T + 2.72.

従って、鋼中のAl量とN量から上式によりスラブ加熱温
度を決定すれば良い。
Therefore, the slab heating temperature may be determined by the above formula from the Al content and N content in the steel.

また、一次再結晶組織の調整を行った後、二次再結晶開
始前までの間に行う窒化の方法については特に限定され
るものではない。アンモニア等、窒化能のある雰囲気ガ
スによる方法、窒化マンガン,窒化クロム等窒化能のあ
る金属窒化物を焼鈍分離剤に添加する方法等いずれの方
法によっても良い。
The nitriding method performed after the primary recrystallization structure is adjusted and before the secondary recrystallization is started is not particularly limited. Any method such as a method using an atmosphere gas having a nitriding ability such as ammonia or a method of adding a metal nitride having a nitriding ability such as manganese nitride or chromium nitride to an annealing separator may be used.

このような、一次再結晶前後におけるインヒビターの使
い分けという技術思想は従来にないものであり、一次再
結晶組織の重要性の発見により初めて出てきたものであ
る。
Such a technical idea of properly using the inhibitor before and after the primary recrystallization has never existed in the past, and was first revealed by the discovery of the importance of the primary recrystallization structure.

このように、一次再結晶組織の調整を合理的に行うため
のインヒビターの作り込みについてのものが請求項2記
載の発明である。
Thus, the invention of claim 2 relates to the incorporation of an inhibitor for rationally adjusting the primary recrystallization structure.

次に本発明の実施の態様を説明する。Next, an embodiment of the present invention will be described.

本発明において、スラブが含有する成分としては、重量
%でSi;1.8〜4.8%,酸可溶性Al;0.012〜0.050%,N;≦
0.010%,残部Feおよび不可避的不純物であり、これら
を必須成分として、それ以外は特に限定しない。
In the present invention, the components contained in the slab include, by weight%, Si; 1.8 to 4.8%, acid-soluble Al; 0.012 to 0.050%, N; ≤
0.010%, balance Fe and unavoidable impurities. These are essential components, and other components are not particularly limited.

Siは含有量が4.8%を超えると冷間圧延時に材料が割れ
易くなり、圧延不可能となる。一方Si量を下げると、仕
上焼鈍時にα→γ変態が生じ結晶の方向性が破壊される
ので、α→γ変態により実質的に結晶の方向性に影響を
及ぼさない1.8%以上を限定範囲とする。
If the Si content exceeds 4.8%, the material is likely to crack during cold rolling, making rolling impossible. On the other hand, if the Si content is lowered, α → γ transformation occurs during finish annealing and the crystal orientation is destroyed, so 1.8% or more, which does not substantially affect the crystal orientation due to the α → γ transformation, is defined as a limited range. To do.

酸可溶性Alは、Nと結合してAlNとなりインヒビターと
して機能する。特に、後工程で窒化する場合には、フリ
ーのAlとして存在させておくことが有効である。磁束密
度が高くなる0.012〜0.050%を限定範囲とする。
Acid-soluble Al combines with N to become AlN and functions as an inhibitor. In particular, in the case of nitriding in a later step, it is effective to make it exist as free Al. The limit range is 0.012 to 0.050% where the magnetic flux density increases.

Nは、0.01%を超えると、ブリスターと呼ばれる鋼板の
空孔を生じるので、0.01%以下を限定範囲とする。
If N exceeds 0.01%, holes in the steel sheet called blister are generated, so 0.01% or less is made the limiting range.

このスラブの加熱温度は、前に述べたようにAl量とN量
からAlNの完全固溶温度以下とする。一般に熱延温度は
低すぎると変形抵抗が大きくなり、また鋼板の形状を確
保し難くなるので、1000℃以上であることが望ましい。
また、1270℃以上になるとスラブ表面の酸化が進み、ノ
ロと呼ばれる溶融物が発生するので、1000〜1270℃の範
囲となることが望ましい。加熱されたスラブは、引き続
き熱間圧延を施される。
As described above, the heating temperature of this slab is set to a temperature below the complete solid solution temperature of AlN based on the amounts of Al and N. Generally, if the hot rolling temperature is too low, the deformation resistance becomes large and it becomes difficult to secure the shape of the steel sheet.
Further, when the temperature is 1270 ° C. or higher, the slab surface is oxidized and a melt called “Noro” is generated. Therefore, the temperature is preferably in the range of 1000 to 1270 ° C. The heated slab is subsequently subjected to hot rolling.

上記熱延板は、必要に応じて750〜1200℃の温度域で30
秒〜30分間焼鈍される。次いで、1回の冷間圧延、もし
くは中間焼鈍をはさむ2回以上の冷間圧延により最終板
厚にする。その際、所定の一次再結晶集合組織を得るた
めに、最終冷間圧延率を80%以上とすることが必須の要
件である。
The hot-rolled sheet may be used in a temperature range of 750 to 1200 ° C, if necessary.
Annealed for seconds to 30 minutes. Then, the final plate thickness is obtained by performing one cold rolling or two or more cold rolling with intermediate annealing. At that time, in order to obtain a predetermined primary recrystallization texture, it is an essential requirement that the final cold rolling rate is 80% or more.

冷間圧延後の材料は、通常鋼中に含まれる炭素を除去す
るため脱炭を兼ねる一次再結晶焼鈍を行う。ここで、平
均粒径が少なくとも15μm以上となるように焼鈍条件
(温度・時間)を決定することが必要である。
The material after cold rolling is usually subjected to primary recrystallization annealing which also serves as decarburization in order to remove carbon contained in steel. Here, it is necessary to determine the annealing conditions (temperature and time) so that the average grain size is at least 15 μm or more.

このようにして得られた材料に焼鈍分離剤を塗布した
後、二次再結晶と純化を目的とした仕上焼鈍を施す。
An annealing separator is applied to the material thus obtained, and then secondary annealing and finishing annealing for the purpose of purification are applied.

一次再結晶焼鈍後、二次再結晶開始前に窒化によりイン
ヒビターを強化することにより、二次再結晶が安定して
行われる。
After the primary recrystallization annealing, the secondary recrystallization is stably performed by strengthening the inhibitor by nitriding before starting the secondary recrystallization.

仕上焼鈍は一次再結晶粒の平均粒径に応じて、所定の温
度域で二次再結晶粒を完全に成長させるように熱サイク
ルを求める。その方法としては該当温度での保持・徐加
熱のいずれでも良い。
In the finish annealing, a heat cycle is required to completely grow the secondary recrystallized grains in a predetermined temperature range according to the average grain size of the primary recrystallized grains. The method may be either holding at the corresponding temperature or gradually heating.

(実施例) 実施例1 重量%で、Si;3.28%,酸可溶性Al;0.027%,N;0.0060
%,Mn;0.14%,S;0.007%含有し、残部Fe及び不可避的不
純物からなるスラブを1150℃及び1300℃の温度に加熱し
た後、熱延して1.8mm厚の熱延板とした。この熱延板
を、1150℃に30秒保持し、引き続いて900℃で30秒保持
する熱延板焼鈍を施した。次いで、圧下率89%で冷間圧
延を行い、0.20mmの最終板厚とし、850℃で90秒間脱炭
を兼ねる一次再結晶焼鈍を行った。その後窒化を目的と
してフェロ窒化マンガンを添加したMgOを主成分とする
焼鈍分離剤を塗布した後、仕上焼鈍をN2:25%+H275%
の雰囲気中で次の2サイクルで行った。
(Example) Example 1 Si: 3.28%, acid soluble Al; 0.027%, N; 0.0060% by weight
%, Mn; 0.14%, S; 0.007%, and a slab consisting of the balance Fe and unavoidable impurities was heated to a temperature of 1150 ° C. and 1300 ° C., and then hot rolled to obtain a 1.8 mm-thick hot rolled sheet. This hot-rolled sheet was annealed at 1150 ° C for 30 seconds and subsequently at 900 ° C for 30 seconds. Next, cold rolling was performed at a reduction rate of 89% to a final sheet thickness of 0.20 mm, and primary recrystallization annealing that also serves as decarburization at 850 ° C. for 90 seconds was performed. After that, an annealing separator containing MgO with ferromanganese nitride added for the purpose of nitriding is applied, and then finish annealing is performed with N 2 : 25% + H 2 75%.
The following two cycles were carried out in the atmosphere.

(A)30℃/hrで1200℃迄昇温。(A) Heat up to 1200 ° C at 30 ° C / hr.

(B)30℃/hrで1070℃迄昇温し、10時間保持した後30
℃/hrで1200℃迄昇温 その後H2:100%の雰囲気中、1200℃で20時間保持し純化
を行った。得られた製品の特性は表1のとおりであっ
た。
(B) After heating up to 1070 ℃ at 30 ℃ / hr and holding for 10 hours, 30
The temperature was raised to 1200 ° C at ℃ / hr and then maintained at 1200 ° C for 20 hours in an atmosphere of H 2 : 100% for purification. The properties of the obtained product are shown in Table 1.

実施例2 実施例1のスラブ加熱温度1300℃の条件の一次再結晶板
に、950℃の追加の熱処理を施した。一次再結晶粒径は2
0μmであった。実施例1と同一の条件で仕上焼鈍を行
った。得られた製品の特性は表2のとおりであった。
Example 2 The primary recrystallized plate of the slab heating temperature of 1300 ° C. of Example 1 was subjected to an additional heat treatment of 950 ° C. Primary recrystallized grain size is 2
It was 0 μm. Finish annealing was performed under the same conditions as in Example 1. The properties of the obtained product are shown in Table 2.

表 2 仕上げ焼鈍サイクル 磁束密度 A 1.87T B 1.92T 実施例3 重量%で、Si;3.3%,酸可溶性Al;0.030%,N;0.003%,
C;0.048%,Mn;0.13%,S;0.010%含有し、残部Fe及び不
可避的不純物からなるスラブを1100℃の温度に加熱した
後熱延して2.0mm厚の熱延板とした。この熱延板を1000
℃で焼鈍した後圧下率89%で冷間圧延し、0.23mmの最終
板厚とした。その後、800℃,850℃,900℃で120秒脱炭を
兼ねる一次再結晶焼鈍を行った。次いでアンモニア雰囲
気ガスで窒素増量が0.02〜0.03%となるように窒化処理
を行った後、焼鈍分離剤を塗布して、仕上焼鈍を行っ
た。仕上焼鈍はN2:10%+H290%の雰囲気ガスで1000℃
迄25℃/hrの速度で昇温し、それから5℃/hrの速度で11
00℃迄昇温後、再び25℃/hrで1200℃迄昇温し、雰囲気
ガスをH2100%に切り換えて純化を行った。
Table 2 Finishing Annealing Cycle Magnetic Flux Density A 1.87T B 1.92T Example 3 Weight%, Si; 3.3%, Acid Soluble Al; 0.030%, N; 0.003%,
A slab containing C; 0.048%, Mn; 0.13%, S; 0.010%, and the balance Fe and unavoidable impurities was heated to a temperature of 1100 ° C and then hot rolled to obtain a hot rolled sheet having a thickness of 2.0 mm. 1000 this hot rolled sheet
After annealing at ℃, it was cold-rolled with a rolling reduction of 89% to give a final plate thickness of 0.23 mm. After that, primary recrystallization annealing was performed at 800 ° C, 850 ° C, and 900 ° C for 120 seconds, which also serves as decarburization. Then, after performing a nitriding treatment with an ammonia atmosphere gas so that the amount of nitrogen increase was 0.02 to 0.03%, an annealing separator was applied and finish annealing was performed. Finish annealing is 1000 ℃ in N 2 : 10% + H 2 90% atmosphere gas.
Up to 25 ℃ / hr and then at 5 ℃ / hr 11
After raising the temperature to 00 ° C, the temperature was raised again to 1200 ° C at 25 ° C / hr, and the atmosphere gas was switched to H 2 100% for purification.

試料の一部を1000℃,1100℃の時点で引出し二次再結晶
が実質的にこの温度域で行われたのを確認した。得られ
た製品の特性は表3のとおりであった。
A part of the sample was pulled out at 1000 ℃ and 1100 ℃, and it was confirmed that the secondary recrystallization was substantially performed in this temperature range. The properties of the obtained product are shown in Table 3.

表 2 一次再結晶温度 一次再結晶粒径 磁束密度B8 800℃ 14μm 1.89T 850℃ 24μm 1.94T 900℃ 27μm 1.95T (発明の効果) 本発明は、以上述べたように一次再結晶組織と二次再結
晶温度を規定して、一次再結晶組織の熱的挙動を制御す
ることにより磁束密度の高い一方向性電磁鋼板を安定し
て製造することができるので、その工業的効果は極めて
顕著である。
Table 2 Primary recrystallization temperature Primary recrystallization grain size Magnetic flux density B 8 800 ℃ 14μm 1.89T 850 ℃ 24μm 1.94T 900 ℃ 27μm 1.95T (Effect of the invention) By controlling the secondary recrystallization temperature and controlling the thermal behavior of the primary recrystallization structure, it is possible to stably produce a grain-oriented electrical steel sheet with a high magnetic flux density, so its industrial effect is extremely remarkable. is there.

【図面の簡単な説明】[Brief description of drawings]

第1図は磁束密度(B8値)と一次再結晶粒の平均粒径及
び二次再結晶温度の関係を示す図である。 第2図は最終冷間圧延率(a)70%,(b)80%,
(c)90%の一次再結晶集合組織を示す(200)ポール
フィギュアである。 第3図は磁束密度(B8値)と最終冷間圧延率の関係を示
す図である。 第4図は最終冷間圧延率(a)70%,(b)80%,
(c)90%の製品の二次再結晶方位分布を示す図であ
る。
FIG. 1 is a diagram showing the relationship between the magnetic flux density (B 8 value), the average grain size of primary recrystallized grains, and the secondary recrystallized temperature. Figure 2 shows the final cold rolling rate (a) 70%, (b) 80%,
(C) A (200) pole figure showing 90% primary recrystallization texture. FIG. 3 is a diagram showing the relationship between the magnetic flux density (B 8 value) and the final cold rolling rate. Figure 4 shows the final cold rolling rate (a) 70%, (b) 80%,
(C) It is a figure which shows the secondary recrystallization orientation distribution of 90% of products.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】重量%でSi;1.8〜4.8%,酸可溶性Al;0.01
2〜0.050%,N≦0.01%,残部Fe及び不可避的不純物から
なる鋼板を、一回もしくは中間焼鈍をはさむ二回以上の
冷間圧延工程によって最終板厚とし、次いで一次再結晶
焼鈍を行った後焼鈍分離剤を塗布し、仕上焼鈍を施す一
方向性電磁鋼板の製造法において、 最終冷間圧延率を80%以上とし、かつ仕上焼鈍時に、一
時再結晶粒の平均粒径D(μm)に応じて、下記不等式
の領域内の温度T(℃)において、二次再結晶粒を事実
上完全に成長させ、その後純化させることを特徴とする
磁束密度の高い一方向性電磁鋼板の製造方法。 T≦20D+700 1000≦T≦1100
1. Si: 1.8 to 4.8% by weight, acid-soluble Al; 0.01
A steel sheet consisting of 2 to 0.050%, N ≤ 0.01%, the balance Fe and unavoidable impurities was subjected to the primary recrystallization annealing after one or two or more cold rolling steps with intermediate annealing to obtain the final sheet thickness. In the method for producing a grain-oriented electrical steel sheet, in which a post-annealing separator is applied and finish annealing is applied, the final cold rolling rate is set to 80% or more, and the average grain size D (μm) of the temporary recrystallized grains during finish annealing According to the above, at a temperature T (° C.) within the region of the following inequality, the secondary recrystallized grains are grown substantially completely, and then purified, and a method for producing a grain-oriented electrical steel sheet having a high magnetic flux density is provided. . T≤20D + 700 1000≤T≤1100
【請求項2】熱間圧延前のスラブの加熱温度をAlとNが
完全に溶体化しない温度で行い、かつ一次再結晶焼鈍後
から仕上焼鈍において、二次再結晶を開始するまでの間
に窒化処理を行う請求項1記載の磁束密度の高い一方向
性電磁鋼板の製造方法。
2. The heating temperature of the slab before hot rolling is performed at a temperature at which Al and N are not completely solutionized, and during the period from after the primary recrystallization annealing to the start of secondary recrystallization in finish annealing. The method for manufacturing a grain-oriented electrical steel sheet having a high magnetic flux density according to claim 1, wherein a nitriding treatment is performed.
JP1079992A 1989-03-30 1989-03-30 Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density Expired - Lifetime JPH0689405B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1079992A JPH0689405B2 (en) 1989-03-30 1989-03-30 Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density
EP19900106018 EP0390142B2 (en) 1989-03-30 1990-03-29 Process for producing grain-oriented electrical steel sheet having high magnetic flux density
DE1990627553 DE69027553T3 (en) 1989-03-30 1990-03-29 Process for producing grain-oriented electrical sheets with high magnetic flux density
US07/770,775 US5186762A (en) 1989-03-30 1991-10-04 Process for producing grain-oriented electrical steel sheet having high magnetic flux density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1079992A JPH0689405B2 (en) 1989-03-30 1989-03-30 Method for manufacturing unidirectional electrical steel sheet with high magnetic flux density

Publications (2)

Publication Number Publication Date
JPH02258930A JPH02258930A (en) 1990-10-19
JPH0689405B2 true JPH0689405B2 (en) 1994-11-09

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Country Link
JP (1) JPH0689405B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479995B1 (en) * 1999-12-06 2005-03-30 주식회사 포스코 A method for producing high permeability grain-oriented silicon steel sheet

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