JPH0690335B2 - Method for producing reflective surface of optical waveguide - Google Patents
Method for producing reflective surface of optical waveguideInfo
- Publication number
- JPH0690335B2 JPH0690335B2 JP57117988A JP11798882A JPH0690335B2 JP H0690335 B2 JPH0690335 B2 JP H0690335B2 JP 57117988 A JP57117988 A JP 57117988A JP 11798882 A JP11798882 A JP 11798882A JP H0690335 B2 JPH0690335 B2 JP H0690335B2
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- crystal substrate
- reflective surface
- producing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 (a) 発明の技術分野 本発明は光導波路の光波の進行方向を変える反射面を作
製する場合光導波路に欠げを生ぜず簡単に精度のよいも
のが出来る光導波路の反射面作製法に関する。Description: (a) Technical Field of the Invention The present invention relates to an optical waveguide in which a reflective surface that changes the traveling direction of a light wave of an optical waveguide can be easily manufactured with high precision without causing a defect in the optical waveguide. Of the reflective surface.
(b) 従来技術と問題点 従来光導波路に光波の進行方向を変える反射面を作製す
る場合は、光導波路の光の進行方向に対して垂直な端面
を斜めにする為にこの端面をダイヤモンドホイール面に
斜めに当て研磨する方法がとられていた。しかしこの方
法では研磨中に光導波路の尖った部分が欠ける欠点があ
り又反射面の精度が悪く又手間がかかる欠点がある。(b) Conventional technology and problems When a reflective surface that changes the traveling direction of a light wave is manufactured in a conventional optical waveguide, the end surface of the optical waveguide that is perpendicular to the traveling direction of the light is slanted so that this end surface is a diamond wheel. A method of obliquely abutting the surface and polishing was adopted. However, this method has the drawback that the sharp portion of the optical waveguide is chipped during polishing, and the precision of the reflecting surface is poor and time-consuming.
(c) 発明の目的 本発明の目的は上記の欠点をなくし、反射面を形成する
光導波路の尖った部分に欠げが生ぜず又反射面の精度も
良く又作製の手間もかからない光導波路の反射面作製法
の提供にある。(c) Object of the invention The object of the present invention is to eliminate the above drawbacks, an optical waveguide which does not have a notch in the sharp portion of the optical waveguide forming the reflecting surface, has a good precision of the reflecting surface, and does not require much labor for production. The purpose is to provide a method for producing a reflective surface.
(d) 発明の構成 本発明は、上記課題を解決するため、光導波路に光波の
進行方向を変える反射面を作製する光導波路の反射面作
製方法において、異方性エッチング可能な結晶基板の表
面上に、該結晶基板と略同一のエッチング特性を持ち且
つ屈折率の異なる媒質からなる上記光導波路を作製する
工程と、上記光導波路を作製した面とは異なる側の上記
結晶基板の表面より、上記光導波路にかけて異方性エッ
チングする工程とを含むようにしたことを特徴とする。(d) Structure of the invention The present invention is, in order to solve the above-mentioned problems, in a reflective surface manufacturing method of an optical waveguide for manufacturing a reflective surface that changes the traveling direction of a light wave in an optical waveguide, the surface of an anisotropically-etchable crystal substrate. Above, the step of producing the optical waveguide made of a medium having substantially the same etching characteristics as the crystal substrate and having a different refractive index, from the surface of the crystal substrate on the side different from the surface on which the optical waveguide is produced, And a step of anisotropically etching the optical waveguide.
(e) 発明の実施例 以下本発明の実施例につき図に従って説明する。第１図
は異方性エッチングの説明図、第２図は光導波路の１例
の斜視図、第３図は本発明の実施例の異方性エッチング
後の断面図、第４図は第２図の結晶基板１′上にレジス
ト膜を設けた斜視図である。(e) Examples of the Invention Examples of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view of anisotropic etching, FIG. 2 is a perspective view of an example of an optical waveguide, FIG. 3 is a sectional view of an embodiment of the present invention after anisotropic etching, and FIG. It is a perspective view which provided the resist film on the crystal substrate 1'of the figure.
図中1,1′は異方性エッチング可能な結晶基板、2,2′は
光導波路、３は＜111＞面、４はパターン化されたレジ
スト膜を示す。In the figure, 1 and 1'denotes a crystal substrate capable of anisotropic etching, 2, 2'denotes an optical waveguide, 3 a <111> plane, and 4 a patterned resist film.
異方性エッチング可能な結晶基板としてはGaAs（ガリウ
ムひ素）等がある。又これと同様なエッチング特性を持
ち光学的には異なる媒質で光導波路作製用としてはAlGa
As（アルミニュームガリウムひ素）等がある。今GaAsウ
エハで第１図で説明するとこれは＜100＞軸がウエハ表
面に対して垂直なオリエンティションを有する。このGa
AsウエハをBr2−CH3OH（ブロムメタノール）液でエッチ
ングを行なうと＜111面＞３のエッチングが最も遅いの
でＶ形の溝が形成される。（結晶基板１はGaAsで作製、
光導波路２はAlGaAsで作製）ここで第２図〜第４図を用
いて反射面を作製する方法を説明すると結晶基板１′に
はGaAsを用い光導波路２′にはAlGaAsを用いれば液相成
長法等により第２図に示す如く結晶基板１′の表面に非
常に薄い光導波路２′が出来る。このGaAsとAlGaAsは異
方性エッチング特性は同じである。よって第４図の如く
結晶基板１′の表面に、１部にパターンの出来たレジス
ト膜４を塗布し、このパターンが形成された結晶基板
１′の一方の面より光導波路２′の形成された他方の面
に向かって、該パターンの非形成部分を通しBr2−CH3OH
液にて十分時間をかけ異方性エッチングすると、結晶基
板１′及び光導波路２′が略同時にエッチングされるの
で、図示のようなおよそ逆四角錐状のくぼみ部が形成さ
れる。As a crystal substrate that can be anisotropically etched, there is GaAs (gallium arsenide) or the like. In addition, AlGa is used for optical waveguide fabrication with a medium that has the same etching characteristics and is optically different.
There is As (aluminum gallium arsenide), etc. Referring now to FIG. 1 for a GaAs wafer, this has an orientation with the <100> axis perpendicular to the wafer surface. This Ga
Since the As wafer Br 2 -CH 3 OH when etching is performed (bromomethanol) solution <111 plane> slowest third etching grooves in the V-shaped is formed. (Crystal substrate 1 is made of GaAs,
The optical waveguide 2 is made of AlGaAs. Here, a method of producing a reflecting surface will be described with reference to FIGS. 2 to 4. When GaAs is used for the crystal substrate 1'and AlGaAs is used for the optical waveguide 2 ', a liquid phase is obtained. As shown in FIG. 2, a very thin optical waveguide 2'is formed on the surface of the crystal substrate 1'by the growth method or the like. This GaAs and AlGaAs have the same anisotropic etching characteristics. Therefore, as shown in FIG. 4, a resist film 4 having a pattern is partially coated on the surface of the crystal substrate 1 ', and the optical waveguide 2'is formed from one surface of the crystal substrate 1'on which the pattern is formed. To the other surface through the non-formation part of the pattern, Br 2 -CH 3 OH
If the crystal substrate 1'and the optical waveguide 2'are etched substantially at the same time by performing anisotropic etching with a liquid for a sufficient period of time, an approximately inverted pyramidal recess is formed as shown in the figure.
この断面を光導波路２′のある所で見ると第３図に示す
如くなる。この時第３図のθは54.7度となり光導波路
２′の端面イは光波の進行方向に変化を与える反射面と
なる。このような方法で光導波路の反射面を作成するこ
とにより、従来のごとく端面イの尖頭部分に欠け等が生
じる問題をなくすことができる。又、異方性エッチング
により化学的に反射面を形成するので、従来の研磨によ
る方法に比して精度の高い良好な反射面を容易に作成す
ることができる。又、光導波路の形成面とは異なる側よ
りエッチングするので、特に光導波路近傍の表面の荒れ
等が生じにくい。When this cross section is seen at the place where the optical waveguide 2'is present, it becomes as shown in FIG. At this time, θ in FIG. 3 becomes 54.7 degrees, and the end face a of the optical waveguide 2'becomes a reflecting surface that changes the traveling direction of the light wave. By forming the reflecting surface of the optical waveguide by such a method, it is possible to eliminate the problem of chipping or the like at the tip of the end face B as in the conventional case. Further, since the reflective surface is chemically formed by anisotropic etching, it is possible to easily form a good reflective surface with high accuracy as compared with the conventional polishing method. Further, since the etching is performed from the side different from the surface on which the optical waveguide is formed, the surface is not easily roughened particularly near the optical waveguide.
(f) 発明の効果 以上、詳細に説明したように、本発明の光導波路の反射
面形成法によれば、結晶基板と光導波路とを略同時に結
晶基板側から異方性エッチングするので、表面に欠けや
荒れ等の無い良好な光導波路の反射面を容易に得ること
ができるというきわめて有効な効果を奏する。(f) Effects of the Invention As described in detail above, according to the method for forming a reflection surface of an optical waveguide of the present invention, the crystal substrate and the optical waveguide are anisotropically etched from the crystal substrate side substantially at the same time, The extremely effective effect of easily obtaining a good reflecting surface of the optical waveguide without chipping or roughness is obtained.
第１図は異方性エッチングの説明図、第２図は光導波路
の１例の斜視図、第３図は本発明の実施例の異方性エッ
チング後の断面図、第４図は第２図の結晶基板上にレジ
スト膜を設けた斜視図である。 図中1,1′は異方性エッチング可能な結晶基板,2,2′は
光導波路,3は＜111＞面,4はレジスト膜を示す。FIG. 1 is an explanatory view of anisotropic etching, FIG. 2 is a perspective view of an example of an optical waveguide, FIG. 3 is a sectional view of an embodiment of the present invention after anisotropic etching, and FIG. It is a perspective view which provided the resist film on the crystal substrate of the figure. In the figure, 1 and 1'indicate a crystal substrate that can be anisotropically etched, 2, 2'indicates an optical waveguide, 3 indicates a <111> plane, and 4 indicates a resist film.
Claims (1)
を作製する光導波路の反射面作製方法であって、 異方性エッチング可能な結晶基板の表面上に、該結晶基
板と略同一のエッチング特性を持ち且つ屈折率の異なる
媒質からなる上記光導波路を作製する工程と、 上記光導波路を作製した面とは異なる側の上記結晶基板
の表面より、上記光導波路にかけて異方性エッチングす
る工程と、 を含むことを特徴とする光導波路の反射面作製方法。1. A method for producing a reflection surface of an optical waveguide, which comprises forming a reflection surface for changing the traveling direction of a light wave on the optical waveguide, the method comprising: A step of producing the optical waveguide made of a medium having etching characteristics and having a different refractive index; and a step of anisotropically etching the optical waveguide from the surface of the crystal substrate on the side different from the surface on which the optical waveguide is produced. A method for producing a reflective surface of an optical waveguide, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57117988A JPH0690335B2 (en) | 1982-07-07 | 1982-07-07 | Method for producing reflective surface of optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57117988A JPH0690335B2 (en) | 1982-07-07 | 1982-07-07 | Method for producing reflective surface of optical waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS597910A JPS597910A (en) | 1984-01-17 |
| JPH0690335B2 true JPH0690335B2 (en) | 1994-11-14 |
Family
ID=14725237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57117988A Expired - Lifetime JPH0690335B2 (en) | 1982-07-07 | 1982-07-07 | Method for producing reflective surface of optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690335B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015064413A (en) | 2013-09-24 | 2015-04-09 | 富士通株式会社 | Optical semiconductor element and manufacturing method therefor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642202A (en) * | 1979-09-14 | 1981-04-20 | Fujitsu Ltd | Photocoupling circuit with filter |
| JPS5729016A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Large scale optical integrated circuit |
-
1982
- 1982-07-07 JP JP57117988A patent/JPH0690335B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS597910A (en) | 1984-01-17 |
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