JPH0690380B2 - Substrate for acousto-optic device - Google Patents
Substrate for acousto-optic deviceInfo
- Publication number
- JPH0690380B2 JPH0690380B2 JP14063382A JP14063382A JPH0690380B2 JP H0690380 B2 JPH0690380 B2 JP H0690380B2 JP 14063382 A JP14063382 A JP 14063382A JP 14063382 A JP14063382 A JP 14063382A JP H0690380 B2 JPH0690380 B2 JP H0690380B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- acousto
- optic device
- piezoelectric thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 40
- 239000010409 thin film Substances 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000010897 surface acoustic wave method Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000005284 excitation Effects 0.000 description 10
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/125—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、音響光学デバイス用の基板に関する。特に、
本発明は、薄膜音響光学デバイス用の基板材料とその構
成に関している。Description: FIELD OF THE INVENTION The present invention relates to substrates for acousto-optic devices. In particular,
The present invention relates to a substrate material for a thin film acousto-optic device and its construction.
従来例の構成とその問題点 従来、音響光学デバイス用の基板として、例えばLiNbO3
のような圧電性結晶が用いられていた。この場合、例え
ば表面を研摩したLiNbO3単結晶基板の表面層に、Ti金属
を拡散させて光導波路を形成するとともに、例えば櫛型
電極を同じく上記LiNbO3単結晶基板の表面に設けて、表
面波トランスデューサを形成し、上記光導波路を伝搬す
る光と、例えば上記表面波トランスデューサで励起した
表面波と相互作用させようとするものである。しかしな
がら、この種の基板は、微小光学素子例えば微小レン
ズ，プリズムなどの形成や、半導体素子例えばGaAsから
なる微小光学検出素子の集積化が困難であり、高密度の
音響光学デバイス例えば光IC用の基板としては実用性に
欠くという欠点があった。Configuration of Conventional Example and Its Problems Conventionally, as a substrate for an acousto-optic device, for example, LiNbO 3
Piezoelectric crystals such as In this case, for example, in the surface layer of the surface polished LiNbO 3 single crystal substrate, while forming an optical waveguide by diffusing Ti metal, for example, a comb electrode is also provided on the surface of the LiNbO 3 single crystal substrate, A wave transducer is formed so that the light propagating through the optical waveguide is allowed to interact with, for example, the surface wave excited by the surface wave transducer. However, this type of substrate is difficult to form a micro optical element such as a micro lens and a prism, and a semiconductor optical element such as a micro optical detection element made of GaAs is difficult to integrate. As a substrate, it has a drawback that it is not practical.
発明の目的 発明者らは、この種の基板に薄膜多層構造を導入するこ
とにより、従来の欠点を除去することに成功し、新規な
音響光学デバイス用基板を発明した。Objects of the Invention The inventors succeeded in eliminating the conventional defects by introducing a thin film multilayer structure into a substrate of this type, and invented a novel substrate for acousto-optic device.
したがって、本発明の目的は、薄膜多層構造からなる音
響光学デバイス用基板の構造と構成材料を与える。Therefore, an object of the present invention is to provide a structure and a constituent material of a substrate for an acoustooptic device having a thin film multilayer structure.
発明の構成 以下本発明を、図を用いて説明する。Configuration of the Invention The present invention will be described below with reference to the drawings.
本発明による音響光学デバイス用基板の基本構造は、第
１図10に示すごとく、サファイア（α−アルミナ）11上
に形成された圧電性薄膜12と、上記圧電性薄膜12で形成
された表面波トランスデューサ13と、As2S3薄膜光導波
路14から構成されたことを特徴としている。上記サファ
イアの表面は、通常光学用に平坦に研磨され、かつ上記
表面波トランスデューサ13から励起された音波15が薄膜
光導波路14に伝搬し易い様に、表面波トランスデューサ
13と薄膜光導波路14は傾斜した界面16で接触している。
この種の構造において、表面波トランスデューサ13を構
成する圧電物質とAs2S3薄膜との界面16における相互拡
散に起因した表面波トランスデューサ13およびAs2S3薄
膜光導波路14の特性劣化，表面波トランスデューサ13の
表面波励起効率，表面波波長、さらにはこれらの構造の
簡単さ、形成の容易さなどを考慮に入れて、上記表面波
トランスデューサ13を構成する圧電薄膜の組成を発明者
らは詳細に調べた結果，従来圧電材料として広く知られ
ている水晶やLiNbO3よりも、ZnS,ZnO,CdSの如きII−VI
族化合物あるいはAINの如きIII−Ｖ族化合物が有効であ
ることを発明者らは確認した。すなわち、ここに示した
II−VI族あるいはIII−Ｖ族化合物の表面波の励起効率
は、例えばLiNbO3より小さいから、表面波トランスデュ
ーサの形成にはLiNbO3のような圧電材料の方が有効であ
ると通常考えられるが、例えば第２図20に示すごとく、
Ｃ軸配向した上記圧電薄膜21を上記サファイア基体上に
形成し、かつ上記圧電薄膜21の表面22に櫛型電極23を、
裏面に対向電極24を設けたサンドウイッチ構造の表面波
トランスデューサ13を構成すると、その励起効率も、例
えばZnOでは15％にも達し、実用上全く問題がない、AsS
3薄膜との界面における相互拡散もないということを発
明者らは確認した。The basic structure of the acousto-optic device substrate according to the present invention is, as shown in FIG. 1, a piezoelectric thin film 12 formed on sapphire (α-alumina) 11 and a surface wave formed by the piezoelectric thin film 12. It is characterized by being composed of a transducer 13 and an As 2 S 3 thin film optical waveguide 14. The surface of the sapphire is usually polished to be flat for optical use, and the surface acoustic wave transducer so that the sound wave 15 excited by the surface acoustic wave transducer 13 easily propagates to the thin film optical waveguide 14.
The thin film optical waveguide 13 and 13 are in contact with each other at an inclined interface 16.
In this type of structure, characteristic deterioration of the piezoelectric material and As 2 S 3 surface waves due to mutual diffusion at the interface 16 between the thin film transducer 13 and As 2 S 3 thin film optical waveguide 14 of the surface wave transducer 13, the surface wave In consideration of the surface wave excitation efficiency of the transducer 13, the wavelength of the surface wave, the simplicity of these structures, the ease of formation, and the like, the inventors have detailed the composition of the piezoelectric thin film that constitutes the surface wave transducer 13. As a result, it was found that II-VI, such as ZnS, ZnO, and CdS, is better than quartz and LiNbO 3 which are widely known as piezoelectric materials.
The inventors have confirmed that group III compounds or group III-V compounds such as AIN are effective. Ie shown here
Surface wave excitation efficiency of the group II-VI or III-V compounds, for example, from LiNbO 3 is smaller than, but the formation of the surface wave transducer normally considered to be a more effective method of a piezoelectric material such as LiNbO 3 , For example, as shown in FIG.
The C-axis oriented piezoelectric thin film 21 is formed on the sapphire substrate, and a comb-shaped electrode 23 is formed on the surface 22 of the piezoelectric thin film 21.
When the surface acoustic wave transducer 13 having a sandwich structure in which the counter electrode 24 is provided on the back surface is configured, the excitation efficiency thereof reaches 15% in ZnO, for example, and there is no problem in practical use.
The inventors have confirmed that there is no mutual diffusion at the interface with the three thin films.
さらに発明者らは、上記サファイア基体表面を（01
２）面単結晶で構成し、上記圧電性薄膜をZnOあるいはA
INで構成すると、（11０）面のZnOおよびAIN単結晶が
形成され、その表面波の音速が5000〜6000m/sと従来の
水晶，LiNbO3単結晶よりもはるかに大きくなるととも
に、表面波の膜中の伝搬損失も、例えば460MHzにおいて
6dB/cmと非常に小さく、超高周波の表面波の励起が実現
されることを確認した。超高周波の表面波の励起は、こ
の種の音響光学デバイス用基板においては、例えば上記
薄膜光導波路中の伝搬光の表面波による回折角度の増加
を可能にし、例えばこの種の音響光学デバイス用基板に
より、回折角度の大きい光偏向器を実現する。Further, the inventors have added the above-mentioned sapphire substrate surface with (01
2) It is composed of plane single crystal, and the piezoelectric thin film is ZnO or A
When composed of IN, ZnO and AIN single crystals of (110) plane are formed, and the speed of sound of the surface wave is 5000 to 6000 m / s, which is much larger than that of the conventional crystal and LiNbO 3 single crystal, and the surface wave The propagation loss in the film is also at 460MHz, for example.
It was confirmed to be able to excite super-high frequency surface waves, which is extremely small at 6 dB / cm. In this type of acousto-optic device substrate, the excitation of super-high-frequency surface waves enables an increase in the diffraction angle due to the surface wave of the propagating light in the thin film optical waveguide, for example, this type of acousto-optic device substrate. Thus, an optical deflector with a large diffraction angle is realized.
さらに発明者らは、第３図30に示すごとく、上記サファ
イア基体11の表面31を（01２）面の単結晶で構成し、
かつ上記ZnO圧電性薄膜の表面32を（11０）面の単結
晶で構成するとともに、上記圧電性薄膜の表面に櫛型電
極23を設けて表面波トランスデューサ13を形成し、上記
ZnO圧電性薄膜の膜厚ｈを 0.13＜h/λ≦0.5 （ただし、λは表面波の波長） で構成すると、表面波の励振効率は15〜20％にも達し、
その値が現在励振効率の最も大きいと言われているLiNb
O3単結晶の励振効率に匹敵することを確認するととも
に、高効率の音響光学デバイスを実現されることを確認
した。Furthermore, the inventors of the present invention constituted the surface 31 of the sapphire substrate 11 with a (012) plane single crystal as shown in FIG.
Further, the surface 32 of the ZnO piezoelectric thin film is composed of a single crystal of (110) plane, and the comb-shaped electrode 23 is provided on the surface of the piezoelectric thin film to form the surface wave transducer 13.
If the film thickness h of the ZnO piezoelectric thin film is 0.13 <h / λ ≦ 0.5 (where λ is the wavelength of the surface wave), the excitation efficiency of the surface wave reaches 15 to 20%,
This value is currently said to have the highest excitation efficiency, LiNb
It was confirmed that the excitation efficiency was comparable to that of the O 3 single crystal and that a highly efficient acousto-optic device was realized.
この場合、上記表面波トランスデューサにより、レーリ
ー波の高次モードの表面波が励振され、この高次モード
の表面波の励振効率が、上記ZnO圧電薄膜の膜厚範囲で
大きくなる。すなわち、このZnO圧電薄膜の膜厚がh/λ
≦0.13の時は、高次モードの表面波は励振されないが、
0.2≦h/λ≦0.5の範囲では、例えば17％以上の大きい励
振効率が得られ、実用上有効であることを本発明者らは
確認した。In this case, the surface wave transducer excites a higher-order mode surface wave of the Rayleigh wave, and the excitation efficiency of the higher-order mode surface wave increases in the film thickness range of the ZnO piezoelectric thin film. That is, the thickness of this ZnO piezoelectric thin film is h / λ
When ≦ 0.13, surface waves of higher modes are not excited,
The present inventors have confirmed that in the range of 0.2 ≦ h / λ ≦ 0.5, a large excitation efficiency of, for example, 17% or more is obtained, which is practically effective.
さらに、この種の表面波トランスデューサの形成に、第
４図40に示すようなスプリット構造の櫛型電極41を用い
ると、上記高次モードの表面波の高調波の励振に有効で
あることを確認した。この場合、上記トランスデューサ
の駆動信号の周波数が高くなるため、広帯域の信号処理
のできる音響光学デバイスが実現される。なお、上記サ
ファイア基体上にＣ軸配向のZnO多結晶圧電薄膜を形成
しても同様の大きい励振効率が得られる。Furthermore, it was confirmed that the use of the comb-shaped electrode 41 having the split structure as shown in FIG. 4 for forming this type of surface acoustic wave transducer is effective for exciting the higher harmonics of the higher order mode surface acoustic wave. did. In this case, since the frequency of the drive signal of the transducer becomes high, an acoustooptic device capable of wideband signal processing is realized. Even if a C-axis oriented ZnO polycrystalline piezoelectric thin film is formed on the sapphire substrate, the same large excitation efficiency can be obtained.
実施例の説明 第５図50に本発明にかかる音響光学デバイス用基板で実
施した構造を示す。この基板の作成には、まず表面が平
滑な厚さ0.3mmの（01２）面サファイア基板上に、RF
マグネトロンスパッタにより厚さ1.0μｍのZnO（11
０）面エピタキシャル膜を形成し、その上に電子ビーム
リソグラフィにより、周期７μm,線巾・間隙が0.875μ
ｍのスプリット構造櫛型電極を形成して、中心周波数2.
2GHzの表面波トランスデューサ13を形成した後、厚さ１
μｍのAs2S3薄膜光導波路14を形成した。さらに、上記
薄膜光導波路14の端部に電子ビーム照射により周期0.5
μｍのグレーテング光結合器51を形成した。この場合、
まずグレーテング光結合器51により、薄膜光導波路に光
15を導入し、表面波トランスデューサ13で励振した表面
波15により上記光を回折させて回折光53を発生させ、こ
れにより、例えば導波路型光偏向器を形成した。この場
合、波長1.064μｍのYAGレーザで励振したTEoモードの
導波光に対する回折角は約60mradであった。Description of Examples FIG. 5 shows a structure implemented with a substrate for an acousto-optic device according to the present invention. To make this substrate, first, apply RF to a (012) plane sapphire substrate with a smooth surface and a thickness of 0.3 mm.
1.0 μm thick ZnO (11
0) plane epitaxial film is formed, and electron beam lithography is performed on it to have a period of 7 μm and a line width / gap of 0.875 μm.
Center frequency of 2.
After forming the 2 GHz surface wave transducer 13, the thickness 1
A μm As 2 S 3 thin film optical waveguide 14 was formed. Further, the end portion of the thin film optical waveguide 14 is irradiated with an electron beam to produce a period of 0.5.
A μm grating optical coupler 51 was formed. in this case,
First, the grating optical coupler 51 is used to
By introducing 15 and diffracting the above-mentioned light by the surface wave 15 excited by the surface wave transducer 13, a diffracted light 53 is generated, thereby forming, for example, a waveguide type optical deflector. In this case, the diffraction angle for the guided light of TEo mode excited by a YAG laser having a wavelength of 1.064 μm was about 60 mrad.
なお、薄膜光導波路材料として、As2S3を示したが、要
は非晶質で、かつ電子ビーム照射により屈折率が変化す
ればよく、このAs−Ｓ系以外に、As−Se−Ｓ系,As−Se
−Ge−Ｓ系薄膜も、本発明の音響光学デバイス用基板の
形成に実用し得る。Although As 2 S 3 is shown as the thin film optical waveguide material, it is essential that the material is amorphous and that the refractive index changes by electron beam irradiation. In addition to this As-S system, As-Se-S System, As-Se
A -Ge-S-based thin film can also be practically used for forming the acousto-optic device substrate of the present invention.
発明の効果 本発明にかかる音響光学デバイス用基板は、サファイア
基体上に形成しているため、例えば上記サファイア基体
上に、Si,GaAs,InPなどの半導体薄膜を、例えばエピタ
キシャル成長させ得る。したがって、ｐ・ｎまたはｐ・
ｉ・ｎ構造の光検出ダイオードや、さらにはレーザダイ
オードを、上述した表面波を用いた音響光学デバイスに
集積化し得るから、本発明にかかる音響光学デバイス用
基板を用いると、高密度の光ICが実現出来る。EFFECTS OF THE INVENTION Since the acoustooptic device substrate according to the present invention is formed on a sapphire substrate, for example, a semiconductor thin film of Si, GaAs, InP or the like can be epitaxially grown on the sapphire substrate. Therefore, p ・ n or p ・
Since the photo-detecting diode having the i / n structure and further the laser diode can be integrated in the above-described acousto-optic device using surface waves, when the acousto-optic device substrate according to the present invention is used, a high density optical IC can be obtained. Can be realized.
さらに、As2S3薄膜は、電子ビーム照射のみで屈折率を
変化させ得るため、容易に光導波路が形成される上、例
えば集光素子やビームスプリッタなどの微小光素子も同
時に集積化できる特長がある。Furthermore, the As 2 S 3 thin film can change the refractive index only by electron beam irradiation, so that an optical waveguide can be easily formed and, for example, minute optical elements such as condensing elements and beam splitters can be integrated at the same time. There is.
したがって、本発明にかかる音響光学デバイス用基板
は、表面波による光の回折効果を用いた、各種の光ICの
形成に有効で、その産業上の利用価値は高い。Therefore, the acousto-optic device substrate according to the present invention is effective for forming various optical ICs using the diffraction effect of light by surface waves, and has high industrial utility value.
第１図は本発明にかかる音響光学デバイス用基板の要部
断面図、第２図，第３図は本発明にかかる音響光学デバ
イス用基板の要部斜視図、第４図，第５図は本発明にか
かる音響光学デバイス用基板の要部平面図である。 11……基体、13……表面波トランスデューサ、14……As
2S3薄膜光導波路。FIG. 1 is a sectional view of an essential part of a substrate for an acousto-optic device according to the present invention, FIGS. 2 and 3 are perspective views of an essential part of a substrate for an acousto-optic device according to the present invention, and FIGS. It is a principal part top view of the board | substrate for acousto-optic devices concerning this invention. 11 ... Substrate, 13 ... Surface wave transducer, 14 ... As
2 S 3 Thin film optical waveguide.
Claims (6)
された圧電性薄膜と、上記圧電性薄膜で形成された表面
波トランスデューサと、As2S3薄膜光導波路とで構成さ
れていることを特徴とする音響光学デバイス用基板。1. A piezoelectric thin film formed on a sapphire (α-alumina) substrate, a surface wave transducer formed of the piezoelectric thin film, and an As 2 S 3 thin film optical waveguide. Characteristic substrate for acousto-optic device.
-V族化合物のうちの少なくとも一種で構成することを特
徴とする特許請求の範囲第１項記載の音響光学デバイス
用基板。2. A piezoelectric thin film comprising a II-VI group compound or III
The substrate for acousto-optic device according to claim 1, wherein the substrate is made of at least one of the group-V compounds.
ことを特徴とする特許請求の範囲第２項記載の音響光学
デバイス用基板。3. The acousto-optic device substrate according to claim 2, wherein the piezoelectric thin film is composed of a C-axis oriented polycrystalline film.
晶で構成し、圧電性薄膜をZnOあるいはAlNで構成するこ
とを特徴とする特許請求の範囲第１項記載の音響光学デ
バイス用基板。4. The acousto-optic device substrate according to claim 1, wherein the surface of the sapphire substrate is composed of a (012) plane single crystal, and the piezoelectric thin film is composed of ZnO or AlN.
成し、かつ櫛型電極を上記圧電性薄膜の表面に設けて形
成した表面波トランスデューサで構成したことを特徴と
する特許請求の範囲第４項記載の音響光学デバイス用基
板。5. The piezoelectric thin film is composed of a (110) plane ZnO single crystal, and the surface acoustic wave transducer is formed by providing a comb-shaped electrode on the surface of the piezoelectric thin film. A substrate for an acousto-optic device according to claim 4.
を特徴とする特許請求の範囲第５項記載の音響光学デバ
イス用基板。6. The substrate for an acousto-optic device according to claim 5, wherein the comb-shaped electrode has a split structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14063382A JPH0690380B2 (en) | 1982-08-12 | 1982-08-12 | Substrate for acousto-optic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14063382A JPH0690380B2 (en) | 1982-08-12 | 1982-08-12 | Substrate for acousto-optic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5930519A JPS5930519A (en) | 1984-02-18 |
| JPH0690380B2 true JPH0690380B2 (en) | 1994-11-14 |
Family
ID=15273223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14063382A Expired - Lifetime JPH0690380B2 (en) | 1982-08-12 | 1982-08-12 | Substrate for acousto-optic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690380B2 (en) |
-
1982
- 1982-08-12 JP JP14063382A patent/JPH0690380B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5930519A (en) | 1984-02-18 |
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