JPH0690502B2 - Photomask blank manufacturing method - Google Patents
Photomask blank manufacturing methodInfo
- Publication number
- JPH0690502B2 JPH0690502B2 JP18411987A JP18411987A JPH0690502B2 JP H0690502 B2 JPH0690502 B2 JP H0690502B2 JP 18411987 A JP18411987 A JP 18411987A JP 18411987 A JP18411987 A JP 18411987A JP H0690502 B2 JPH0690502 B2 JP H0690502B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- shielding film
- photomask blank
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 <産業上の利用分野> 本発明は、フォトマスクの素材であるフォトマスクブラ
ンクの製造方法に関する。The present invention relates to a method for manufacturing a photomask blank, which is a material for a photomask.
<従来の技術> フォトマスクブランクは、透明基板の表面に遮光膜が形
成されたものであり、前記遮光膜を所定パターン状に成
形して、フォトマスクとされる。<Prior Art> A photomask blank is one in which a light-shielding film is formed on the surface of a transparent substrate, and the light-shielding film is formed into a predetermined pattern to form a photomask.
前記パターン成形にあたっては、通常、フォトリソグラ
フィ方式による。つまり、遮光膜の表面に形成したレジ
スト膜を所定パターン状に成形した後、エッチング加工
を施すことにより、前記パターンに対応して遮光膜をパ
ターニングするものである。The pattern formation is usually performed by a photolithography method. That is, the resist film formed on the surface of the light-shielding film is formed into a predetermined pattern and then subjected to etching to pattern the light-shielding film corresponding to the pattern.
一般に、透明基板としてはガラス基板が用いられ、遮光
膜としては真空蒸着やスパッタ法等により形成したクロ
ムが用いられており、第2図a〜bに示すような工程で
製造されている。In general, a glass substrate is used as the transparent substrate, and chromium formed by a vacuum deposition method or a sputtering method is used as the light shielding film, which is manufactured by the steps shown in FIGS.
すなわち、ガラス基板1上に金属クロム膜の遮光膜2を
真空蒸着またはスパッタ法などにより形成する。That is, the light-shielding film 2 of a metal chromium film is formed on the glass substrate 1 by vacuum deposition or sputtering.
<発明が解決しようとする課題> 一般に用いられているクロムの遮光膜は、化学的・機械
的耐久性の点で充分であるとは言えず、フォトマスク製
造工程やフォトマスク洗浄中にマスクパターンの欠落な
どの欠陥を生じるといった欠点がある。また、金属クロ
ムは遮光膜の表面光反射率が高く、ウエハープロセス上
不都合がある。<Problems to be Solved by the Invention> The light-shielding film of chromium that is generally used is not sufficient in terms of chemical and mechanical durability, and the mask pattern is used during the photomask manufacturing process or photomask cleaning. There is a defect that defects such as a lack of are generated. Further, metallic chromium has a high surface light reflectance of the light shielding film, which is inconvenient in the wafer process.
本発明は、化学的・機械的耐久性の双方に優れ、表面光
反射率が低いクロム層からなる遮光膜を形成できるよう
な製造法を提供することを目的とする。An object of the present invention is to provide a manufacturing method capable of forming a light-shielding film composed of a chromium layer having excellent chemical and mechanical durability and low surface light reflectance.
<課題を解決するための手段> 本発明は、ガラス基板の表面に、真空蒸着またはスパッ
タ法等によりクロム層からなる遮光膜を形成する工程を
含むフォトマスクブランクの製造法において、前記遮光
膜形成後−レジスト膜形成前に、前記遮光膜表面にプラ
ズマ処理を施し、遮光膜表面に酸化膜あるいは窒化膜か
らなるクロム化合物層を形成する工程を含むことを特徴
とするものである。<Means for Solving the Problems> The present invention provides a method of manufacturing a photomask blank, which comprises a step of forming a light-shielding film made of a chromium layer on the surface of a glass substrate by vacuum deposition, sputtering or the like. After-before forming the resist film, the method further comprises the step of subjecting the surface of the light-shielding film to plasma treatment to form a chromium compound layer made of an oxide film or a nitride film on the surface of the light-shielding film.
<作用> プラズマ処理を施すことによって、金属クロム膜からな
る遮光膜の機械的耐久性を向上させることが可能であ
り、しかも遮光膜の反射率を低下させることが可能であ
る。<Operation> By performing the plasma treatment, it is possible to improve the mechanical durability of the light-shielding film made of a metal chromium film, and it is possible to reduce the reflectance of the light-shielding film.
また、プラズマ処理を行なう事で、遮光膜表面の残留有
機物が除去され、後工程で形成するレジスト膜との密着
性が向上する。Further, by performing the plasma treatment, the residual organic substances on the surface of the light-shielding film are removed, and the adhesion with the resist film formed in a later step is improved.
<実施例> 以下、本発明のフォトマスクブランクの製造法の実施例
を図面に基づいて説明する。<Example> Hereinafter, an example of a method for manufacturing a photomask blank of the present invention will be described with reference to the drawings.
第1図a〜cは、本発明におけるフォトマスクブランク
の製造法の一例を工程順に示す説明図、第3図は平行平
板型のプラズマ表面処理装置の説明図である。1A to 1C are explanatory views showing an example of a method of manufacturing a photomask blank according to the present invention in the order of steps, and FIG. 3 is an explanatory view of a parallel plate type plasma surface treatment apparatus.
第1図aに示すガラス基板10上に、従来と同様に真空蒸
着またはスパッタ法により1000Å前後の金属クロム膜層
11を第1図bに示すように形成する。On the glass substrate 10 shown in FIG. 1a, a chromium metal film layer of about 1000 Å is formed by vacuum deposition or sputtering as in the conventional method.
11 is formed as shown in FIG. 1b.
次に、この金属クロム層を有する基板12を第3図に示す
ようなプラズマ表面処理装置20内に配し、酸素ガス雰囲
気中で約13.56MHzの高周波放電によりプラズマを発生さ
せ、金属クロム層11の表面の反応を行なわせしめる。こ
れにより第1図Cに示す様な金属クロム層11の表面を酸
化したプラズマ処理膜層13を有する基板14を得る。Next, the substrate 12 having the metal chromium layer is placed in the plasma surface treatment apparatus 20 as shown in FIG. 3, and plasma is generated by high frequency discharge of about 13.56 MHz in the oxygen gas atmosphere, and the metal chromium layer 11 is formed. The reaction of the surface of the. As a result, a substrate 14 having a plasma treated film layer 13 obtained by oxidizing the surface of the metallic chromium layer 11 as shown in FIG. 1C is obtained.
なお、第3図においては、真空処理室21内にテーブル22
が設置され、テーブルの上方に上部電極24、下方には下
部電極23が設置されている。プラズマ処理を行なう際に
は、ターゲット材料をテーブル上に堆積させ、最初に処
理室21を真空に排気し、ガス導入口26より酸素ガスを流
入しながら、排気口27から排気して処理室内の圧力を一
定に保つ。そこで、高周波電源25からの高周波放電を行
なうことによってプラズマ処理を施すものである。In FIG. 3, a table 22 is provided in the vacuum processing chamber 21.
Is installed, the upper electrode 24 is installed above the table, and the lower electrode 23 is installed below the table. When performing the plasma processing, the target material is deposited on the table, the processing chamber 21 is first evacuated to a vacuum, and oxygen gas is introduced from the gas introduction port 26, while being exhausted from the exhaust port 27 to exhaust the inside of the processing chamber. Keep pressure constant. Therefore, plasma processing is performed by performing high-frequency discharge from the high-frequency power supply 25.
また、酸素ガスの代わりに窒素ガスや、酸素や窒素を含
有するガスを用いる事により、窒化膜や化合物膜を形成
する事も可能である。Further, it is possible to form a nitride film or a compound film by using nitrogen gas or a gas containing oxygen or nitrogen instead of oxygen gas.
上記の方法によって形成されたプラズマ処理膜(クロム
化合物層)は、従来の自然酸化による不働態皮膜よりも
厚い酸化膜あるいは窒化膜であり、機械的強度が向上し
ている。The plasma-treated film (chromium compound layer) formed by the above method is an oxide film or nitride film that is thicker than the conventional passive film formed by natural oxidation, and has improved mechanical strength.
例えば、酸素ガス流量100[SCCM],圧力0.1[Torr]の
条件下でプラズマ処理を施した金属クロム膜は、2500
[PSI]の高圧力水洗浄(75回繰り返し)において、プ
ラズマ処理を行なわない金属クロム膜のピンホール欠陥
発生が1.7[個/cm2]であるのに対し、0.9[個/cm2]
と著しく減少した。For example, a metallic chromium film that has been plasma treated under the conditions of oxygen gas flow rate 100 [SCCM] and pressure 0.1 [Torr] is 2500
In the high pressure water cleaning (75 times repeated) of [PSI], the number of pinhole defects generated in the metallic chromium film without plasma treatment was 1.7 [pieces / cm 2 ], whereas it was 0.9 [pieces / cm 2 ].
And significantly decreased.
さらに、酸素ガス流量50〜150[SCCM],圧力0.1〜1.0
[Torr]の条件下でのプラズマ処理を施した金属クロム
膜の反射率は、プラズマ処理を施さない高反射率の金属
クロム膜と比較して、5%未満に低下した。Furthermore, oxygen gas flow rate 50-150 [SCCM], pressure 0.1-1.0
The reflectance of the metallic chromium film subjected to the plasma treatment under the condition of [Torr] was reduced to less than 5% as compared with the metallic chromium film of high reflectance not subjected to the plasma treatment.
加えて、このようなプラズマ処理膜を有する金属クロム
膜を従来のウェットエッチング方でエッチングした後の
金属クロムパターンの形状はプラズマ処理を行なわない
場合のものと変化がなかった。In addition, the shape of the metallic chromium pattern after etching the metallic chromium film having such a plasma treated film by the conventional wet etching method was not different from that of the case where the plasma treatment was not performed.
<発明の効果> 本発明によって、化学的・機械的耐久性の双方に優れ、
表面光反射率が低いクロム層からなる遮光膜を形成でき
るような製造法が提供された。<Effects of the Invention> The present invention is excellent in both chemical and mechanical durability,
There is provided a manufacturing method capable of forming a light shielding film made of a chromium layer having a low surface light reflectance.
また、後工程において、プラズマ処理膜を有する金属ク
ロム膜を従来のウェットエッチング法でエッチングした
後の金属クロムパターンの形状は、プラズマ処理を行な
わない場合のものと変化がなかった事からも明らかなよ
うに、遮光膜にプラズマ処理を施した場合のエッチング
適性は、プラズマ処理を施さない従来の場合と変わらな
い。従って、本発明によるフォトマスクブランクは、後
工程において、従来設備を利用したフォトマスクの製造
にも対応できる。Further, it is clear from the fact that the shape of the metallic chromium pattern after etching the metallic chromium film having the plasma-treated film by the conventional wet etching method in the subsequent step was not changed from that in the case where the plasma treatment was not performed. As described above, the etching suitability in the case where the light shielding film is subjected to the plasma treatment is the same as that in the conventional case where the plasma treatment is not performed. Therefore, the photomask blank according to the present invention can be applied to the production of a photomask using conventional equipment in the subsequent process.
図面は本発明の実施例を示すものであって、第1図a〜
cはフォトマスクブランクの製造法の一実施例を工程順
に示す説明図、また、第2図a〜bは従来の技術を説明
するものであって、従来のフォトマスクブランクの製造
法の一実施例を工程順に示す説明図である。 第3図は本発明に用いるプラズマ表面処理装置の一例を
示す説明図である。 10……ガラス基板 11……遮光膜層 12……従来のレジスト塗布形成前のフォトマスクブラン
ク 13……プラスマ処理膜層 14……プラズマ処理膜形成後のフォトマスクブランクThe drawings show an embodiment of the invention, which is illustrated in FIGS.
c is an explanatory view showing an embodiment of a method for manufacturing a photomask blank in the order of steps, and FIGS. 2A and 2B are views for explaining a conventional technique. It is explanatory drawing which shows an example in order of process. FIG. 3 is an explanatory view showing an example of the plasma surface treatment apparatus used in the present invention. 10 …… Glass substrate 11 …… Light-shielding film layer 12 …… Photomask blank before forming conventional resist coating 13 …… Plasma treatment film layer 14 …… Photomask blank after plasma treatment film formation
Claims (1)
ッタ法等によりクロム層からなる遮光膜を形成する工程
を含むフォトマスクブランクの製造法において、前記遮
光膜形成後−レジスト膜形成前に、前記遮光膜表面にプ
ラズマ処理を施し、遮光膜表面に酸化膜あるいは窒化膜
からなるクロム化合物層を形成する工程を含むことを特
徴とするフォトマスクブランクの製造法。1. A method of manufacturing a photomask blank comprising a step of forming a light-shielding film made of a chromium layer on the surface of a glass substrate by vacuum deposition or sputtering, after the formation of the light-shielding film-before forming the resist film, A method of manufacturing a photomask blank, comprising a step of subjecting the surface of the light-shielding film to plasma treatment to form a chromium compound layer made of an oxide film or a nitride film on the surface of the light-shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18411987A JPH0690502B2 (en) | 1987-07-23 | 1987-07-23 | Photomask blank manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18411987A JPH0690502B2 (en) | 1987-07-23 | 1987-07-23 | Photomask blank manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6428644A JPS6428644A (en) | 1989-01-31 |
| JPH0690502B2 true JPH0690502B2 (en) | 1994-11-14 |
Family
ID=16147709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18411987A Expired - Lifetime JPH0690502B2 (en) | 1987-07-23 | 1987-07-23 | Photomask blank manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690502B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5054674A (en) * | 1973-09-17 | 1975-05-14 | ||
| JPS5621147B2 (en) * | 1974-10-04 | 1981-05-18 | ||
| JPS5876831A (en) * | 1981-11-02 | 1983-05-10 | Konishiroku Photo Ind Co Ltd | Metallic image forming material |
-
1987
- 1987-07-23 JP JP18411987A patent/JPH0690502B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6428644A (en) | 1989-01-31 |
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