JPH0691019B2 - Vapor deposition equipment - Google Patents
Vapor deposition equipmentInfo
- Publication number
- JPH0691019B2 JPH0691019B2 JP60275351A JP27535185A JPH0691019B2 JP H0691019 B2 JPH0691019 B2 JP H0691019B2 JP 60275351 A JP60275351 A JP 60275351A JP 27535185 A JP27535185 A JP 27535185A JP H0691019 B2 JPH0691019 B2 JP H0691019B2
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- cleaning
- drive
- vapor deposition
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 この発明は化学気相成長装置や物理蒸着装置などのLSI
等に代表される半導体素子の製造装置に関するものであ
る。The present invention relates to an LSI such as a chemical vapor deposition apparatus or a physical vapor deposition apparatus.
The present invention relates to a semiconductor device manufacturing apparatus represented by the above.
従来の技術 第３図に従来例のプラズマCVD装置を示す。反応室１の
上部には原料ガスの供給口７が、下部には真空吸引４が
開設されていて、それぞれ、原料ガス供給装置８、真空
ポンプ５につながっている。６は反応室１内の圧力を測
定表示するための真空計である。反応室１内には上部電
極２と下部電極３が平行に対向して設けられている。電
極２と３の間には高周波電源装置９によって高周波電力
が印加される。シリコン基板等の被膜形成用基板は下部
電極３の上に置かれ原料ガス供給口７から流入した原料
ガスの分解により所望薄膜が形成される。しかし、この
種装置では所望基板のみならず電極等にも付着体10が付
着し、堆積工程を重ねるうちにこの電極等に付着した付
着体10が剥離し、基板面上に再付着し、半導体素子の不
良発見の原因の一つになった。そのため電極のクリーニ
ング工程が必要になる。例えば電極等に付着した不要の
Siを取り除くためには、クリーニング用のガスとしてCF
4ガスを供給し、0.1〜5Torr前後の圧力でプラズマ放電
しクリーニングが行われる。この反応は（１）式に示す
ような反応で付着体10となった不要のSiはSiF4となって
排除される。Conventional Technology FIG. 3 shows a conventional plasma CVD apparatus. A raw material gas supply port 7 is provided in the upper part of the reaction chamber 1, and a vacuum suction 4 is provided in the lower part thereof, which are connected to a raw material gas supply device 8 and a vacuum pump 5, respectively. Reference numeral 6 is a vacuum gauge for measuring and displaying the pressure in the reaction chamber 1. An upper electrode 2 and a lower electrode 3 are provided in the reaction chamber 1 so as to face each other in parallel. A high frequency power supply 9 applies high frequency power between the electrodes 2 and 3. A film forming substrate such as a silicon substrate is placed on the lower electrode 3 and a desired thin film is formed by decomposing the source gas flowing from the source gas supply port 7. However, in this type of device, the adherent 10 adheres not only to the desired substrate but also to the electrode, etc., and the adherent 10 adhered to this electrode etc. peels off during the course of the deposition process, and re-adheres on the substrate surface. It became one of the causes of the defect detection of the element. Therefore, the electrode cleaning process is required. For example, unnecessary attached to electrodes
CF is used as a cleaning gas to remove Si.
4 gas is supplied and plasma discharge is performed at a pressure of around 0.1 to 5 Torr for cleaning. In this reaction, unnecessary Si which has become the adherent 10 by the reaction shown in the formula (1) is eliminated as SiF 4 .
Si＋CF4＋O2→SiF4＋CO2 ……（１） 従来例の装置におけるクリーニング工程では、5Torr前
後のクリーニング条件にするためのポンピング条件によ
る流れでしかSiF4やCO2は排除されないため、クリーニ
ングに長時間をかけることが必要な現状にある。Si + CF 4 + O 2 → SiF 4 + CO 2 (1) In the cleaning process of the conventional equipment, SiF 4 and CO 2 are removed only by the flow of pumping conditions to achieve a cleaning condition of around 5 Torr, so cleaning is possible. Currently, it is necessary to take a long time.
発明が解決しようとする問題点 上記（１）に示す反応式で発生したSiF4やCO2ガスをす
みやかに電極表面近傍から除去し、電極表面近傍でのSi
F4とCO2の分子圧を低減することによって（１）式で表
わされる右方向の反応を加速し、より良好なクリーニン
グ結果を得るとともにクリーニング時間を短縮し、半導
体素子の生産性を向上することにある。Problems to be Solved by the Invention SiF 4 and CO 2 gas generated by the reaction formula shown in (1) above are promptly removed from the vicinity of the electrode surface to remove Si in the vicinity of the electrode surface.
To accelerate the reaction in the right direction represented by (1) by reducing the molecular pressure of F 4 and CO 2, to reduce the cleaning time with obtaining better cleaning results, to improve the productivity of the semiconductor element Especially.
問題点を解決するための手段 本発明による蒸着装置は反応室内の電極間に吐出口が位
置するように流体駆動装置を配置し、吐出口の近傍に流
体の供給口を設けたものである。Means for Solving the Problems In the vapor deposition apparatus according to the present invention, a fluid driving device is arranged so that a discharge port is located between electrodes in a reaction chamber, and a fluid supply port is provided in the vicinity of the discharge port.
作 用 本発明は上記構成により発生した被排除ガスを強制的に
排除して分子圧を下げるとともに新しいクリーニングガ
スを電極面等に供給することによってクリーニング反応
を加速させ、そのクリーニング時間を短縮させることが
できる。Operation The present invention can accelerate the cleaning reaction by forcibly excluding the excluded gas generated by the above configuration to lower the molecular pressure and supply a new cleaning gas to the electrode surface, etc., and shorten the cleaning time. You can
実 施 例 第１図は本発明の１実施例を示す横断面の概略図で、平
行に対向する上部電極２と下部電極３の間に、主に流れ
が形成されるように、吐出口13を位置させて流体駆動装
置11を配置してある。吐出口13の近傍にはクリーニング
ガス吐出口15が設けられていて、クリーニング工程時に
はクリーニング用のガスが配管14を介して原料ガス供給
装置８から供給される。クリーニング用ガスの供給系は
原料ガス供給系と分離してもかわりはない。12は流体駆
動装置11の電源装置である。その他の部分の名称，機能
作用は従来例と同じである。Example 1 FIG. 1 is a schematic cross-sectional view showing an example of the present invention. The discharge port 13 is formed so that a flow is mainly formed between the upper electrode 2 and the lower electrode 3 facing each other in parallel. And the fluid drive device 11 is arranged. A cleaning gas discharge port 15 is provided in the vicinity of the discharge port 13, and a cleaning gas is supplied from the source gas supply device 8 through the pipe 14 during the cleaning process. The cleaning gas supply system may be separated from the source gas supply system. Reference numeral 12 is a power supply device of the fluid drive device 11. The names and functions of other parts are the same as the conventional example.
本装置のクリーニング工程では、クリーニング用のガス
が流体駆動装置11の作用によって強制流となって電極部
分等の付着体10に当たるため、前記反応式（１）によっ
て生成した分子が強制的に排除されるために、分子圧が
下ってクリーニング反応が加速されるとともに新しいク
リーニング用のガスが強制的に供給されるためクリーニ
ング作用が大幅に向上する。In the cleaning process of this apparatus, the cleaning gas is forced to flow by the action of the fluid driving apparatus 11 and hits the adherent 10 such as the electrode portion, so that the molecules generated by the reaction formula (1) are forcibly removed. Therefore, the molecular pressure decreases, the cleaning reaction is accelerated, and a new cleaning gas is forcibly supplied, so that the cleaning action is significantly improved.
第２図は本発明の第２の実施例を示す図で、筐体16に断
面積がＡで長さがＬの駆動管17が連接している。筐体16
の内には振動板18がスプリング19を介して支持板20に取
付けられていて、筐体16の内部は２つに分割され、駆動
管17側に容積Ｖなる空間室24が形成される。振動板18に
はコイル22が固定されており、筐体16に固定された永久
磁石23と同心円状に相対していて、全体として流体駆動
装置11を形成している。26はコイル22に電力を供給する
電源装置で周波数の調整機能を有している。吐出口13は
２つの電極２と３の間に向いていてその近傍にクリーニ
ングガス吐出口15が開口している。その他の部分の構
成，名称，機能は第１の実施例と同じである。容積Ｖの
空気室21と断面積Ａ、長さＬの駆動間17により周波数
０のヘルムホルツの共鳴器を形成する。FIG. 2 is a view showing a second embodiment of the present invention, in which a drive pipe 17 having a cross-sectional area A and a length L is connected to a housing 16. Case 16
A vibrating plate 18 is attached to a supporting plate 20 via a spring 19 inside the casing, and the inside of the housing 16 is divided into two, so that a space chamber 24 having a volume V is formed on the drive pipe 17 side. A coil 22 is fixed to the diaphragm 18 and is concentrically opposed to the permanent magnet 23 fixed to the housing 16 to form the fluid drive device 11 as a whole. A power supply device 26 supplies power to the coil 22 and has a frequency adjusting function. The discharge port 13 faces between the two electrodes 2 and 3, and a cleaning gas discharge port 15 is opened in the vicinity thereof. The configuration, name, and function of the other parts are the same as in the first embodiment. Frequency between the air chamber 21 of volume V and the drive space 17 of cross-sectional area A and length L
Form a Helmholtz resonator of zero .
次に本実施例の作用効果を説明する。クリーニング工程
において、電源装置26によって０の周波数でコイル22
に電力を供給すると共振現象が発生し、駆動管17内の柱
状流体24は図中の点線で示すように、あたかも一体であ
るかの様に激しく振動する。柱状流体23が右側に動くと
き、駆動管17の入口近傍の流体は右方向に駆動される。
次に柱状流体24が左方向に動くと駆動管17内の入口近傍
に負圧が発生し、吐出口13近傍の静止していた流体が負
圧の作用によって図中の曲線25で示すように駆動管17内
に吸い込まれる。次に柱状流体24が再び右方向に動くと
きこの吸い込まれた流体を右方向に駆動する。その結
果、数サイクルの後には図の矢印に示すような流れが形
成され、クリーニング用のガスが強制的に駆動され、第
１の実施例と同様の効果が得られる。Next, the function and effect of this embodiment will be described. In the cleaning process, the power supply device 26 causes the coil 22 to operate at a frequency of 0.
When electric power is supplied to the column, a resonance phenomenon occurs, and the columnar fluid 24 in the drive tube 17 vibrates violently as if it were integrated, as shown by the dotted line in the figure. When the columnar fluid 23 moves to the right, the fluid near the inlet of the drive tube 17 is driven to the right.
Next, when the columnar fluid 24 moves to the left, a negative pressure is generated in the vicinity of the inlet in the drive tube 17, and the stationary fluid near the discharge port 13 is affected by the negative pressure as shown by a curve 25 in the figure. It is sucked into the drive tube 17. Next, when the columnar fluid 24 moves rightward again, this sucked fluid is driven rightward. As a result, after several cycles, a flow as shown by the arrow in the drawing is formed, the cleaning gas is forcibly driven, and the same effect as in the first embodiment is obtained.
なお、本形式の流体駆動装置は数Torr程度に減圧した状
態でも流体を駆動する機能を有している。その結果、ク
リーニング工程時間を短縮できる効果を得ることができ
る。The fluid drive device of this type has a function of driving the fluid even when the pressure is reduced to about several Torr. As a result, the effect of shortening the cleaning process time can be obtained.
発明の効果 以上に説明したように、本発明によれば半導体製造工程
における無駄時間であるクリーニング工程時間を短縮す
ることができ、生産性の向上に寄与できるとともに良好
なクリーニング結果が得られ、特に第２の実施例による
流体駆動装置は安価に防爆形の装置とすることができる
ので安全性の高い、高クリーニング機能付の蒸着装置を
提供することができる。EFFECTS OF THE INVENTION As described above, according to the present invention, it is possible to shorten the cleaning process time, which is a dead time in the semiconductor manufacturing process, contribute to the improvement of productivity, and obtain good cleaning results. Since the fluid drive system according to the second embodiment can be an explosion-proof type device at low cost, it is possible to provide a highly safe vapor deposition device with a high cleaning function.
第１図は本発明の第１の実施例による蒸着装置の横断面
図、第２図は本発明の第２の実施例の要点の部分横断面
図、第３図は従来の蒸着装置の横断面図である。 １……反応室、２……上部電極、３……下部電極、５…
…真空ポンプ、６……真空計、８……原料ガス供給装
置、９……高周波電源、10……付着体、11……流体駆動
装置、12……電源装置、15……クリーニングガス吐出
口。FIG. 1 is a cross-sectional view of a vapor deposition apparatus according to a first embodiment of the present invention, FIG. 2 is a partial cross-sectional view of the essential points of a second embodiment of the present invention, and FIG. 3 is a cross section of a conventional vapor deposition apparatus. It is a side view. 1 ... Reaction chamber, 2 ... Upper electrode, 3 ... Lower electrode, 5 ...
... vacuum pump, 6 ... vacuum gauge, 8 ... raw material gas supply device, 9 ... high frequency power supply, 10 ... adhesive body, 11 ... fluid drive device, 12 ... power supply device, 15 ... cleaning gas discharge port .
Claims (2)
とともに、前記電極間に吐出口を臨ませて流体駆動装置
を設け、前記吐出口の近傍に前記電極をクリーニングす
る成分を含んだ流体の供給口を設け、前記流体を前記電
極方向に駆動することを特徴とする蒸着装置。1. A fluid containing a component for cleaning the electrode, wherein electrodes facing each other are arranged in parallel in a reaction chamber, a discharge port is provided between the electrodes so as to face the discharge port, and a component for cleaning the electrode is provided in the vicinity of the discharge port. The vapor deposition apparatus is characterized in that the fluid supply port is provided to drive the fluid toward the electrode.
た駆動管と、前記筺体内にスプリングを介して取付けた
振動板と、前記振動板を駆動するための駆動手段と、前
記筺体内の容積と前記駆動管の断面積と長さで定まる共
振周波数に一致する周波数で前記駆動手段に電力を供給
する電源装置とよりなる流体駆動装置としたことを特徴
とする特許請求の範囲第１項記載の蒸着装置。2. A fluid drive device, a casing, a drive tube connected to the casing, a diaphragm attached to the casing via a spring, a driving means for driving the diaphragm, and the casing. Claim 1 is a fluid drive device including a power supply device that supplies electric power to the drive means at a frequency that matches a resonance frequency determined by the volume of the drive tube and the cross-sectional area and length of the drive tube. The vapor deposition device according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60275351A JPH0691019B2 (en) | 1985-12-06 | 1985-12-06 | Vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60275351A JPH0691019B2 (en) | 1985-12-06 | 1985-12-06 | Vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62134925A JPS62134925A (en) | 1987-06-18 |
| JPH0691019B2 true JPH0691019B2 (en) | 1994-11-14 |
Family
ID=17554261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60275351A Expired - Lifetime JPH0691019B2 (en) | 1985-12-06 | 1985-12-06 | Vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691019B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7014573B2 (en) | 1995-06-07 | 2006-03-21 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7131914B2 (en) | 1995-06-07 | 2006-11-07 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7153467B2 (en) | 1995-06-07 | 2006-12-26 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7594866B2 (en) | 1996-02-16 | 2009-09-29 | Acushnet Company | Method of making a golf ball with a multi-layer core |
-
1985
- 1985-12-06 JP JP60275351A patent/JPH0691019B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7014573B2 (en) | 1995-06-07 | 2006-03-21 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7131914B2 (en) | 1995-06-07 | 2006-11-07 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7153467B2 (en) | 1995-06-07 | 2006-12-26 | Acushnet Company | Method of making a golf ball with a multi-layer core |
| US7594866B2 (en) | 1996-02-16 | 2009-09-29 | Acushnet Company | Method of making a golf ball with a multi-layer core |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62134925A (en) | 1987-06-18 |
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