JPH0691046B2 - Reactive ion etching method - Google Patents
Reactive ion etching methodInfo
- Publication number
- JPH0691046B2 JPH0691046B2 JP61276095A JP27609586A JPH0691046B2 JP H0691046 B2 JPH0691046 B2 JP H0691046B2 JP 61276095 A JP61276095 A JP 61276095A JP 27609586 A JP27609586 A JP 27609586A JP H0691046 B2 JPH0691046 B2 JP H0691046B2
- Authority
- JP
- Japan
- Prior art keywords
- reactive ion
- ion etching
- hole
- etching method
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 15
- 150000001722 carbon compounds Chemical class 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置のコンタクトホール及びスルーホー
ルの反応性イオンエッチング方法、特に高いエッチング
レートが得られる上に、コンタクトホール抵抗及びスル
ーホール抵抗の小さいコンタクトホール及びスルーホー
ルの反応性イオンエッチング方法に関する。The present invention relates to a method for reactive ion etching of a contact hole and a through hole of a semiconductor device, in particular, a high etching rate can be obtained, and the contact hole resistance and the through hole resistance can be improved. The present invention relates to a reactive ion etching method for small contact holes and through holes.
従来、この種の反応性イオンエッチング方法は、反応性
ガスとして少なくともフッ素と水素のいずれかを含む炭
素化合物に酸素や水素等を少量添加してエッチングを行
っていた。Conventionally, this kind of reactive ion etching method has been performed by adding a small amount of oxygen, hydrogen, or the like to a carbon compound containing at least either fluorine or hydrogen as a reactive gas.
上述した従来の反応性イオンエッチング方法ではエッチ
ング反応を抑制する反応生成物の堆積が起きるため、得
られるエッチングレートが小さいばかりでなく、下地膜
であるシリコン基盤上及び第１層金属配線層上に堆積し
た反応生成物はコンタクト抵抗及びスルーホール抵抗を
増大させるので、コンタクトホール、スルーホールの品
質のバラツキが多く、安定した高歩留りが得られないと
いう欠点があった。In the above-mentioned conventional reactive ion etching method, since a reaction product that suppresses the etching reaction is deposited, the obtained etching rate is not only small, but also on the silicon substrate as the base film and the first metal wiring layer. Since the deposited reaction product increases the contact resistance and the through hole resistance, there are many variations in the quality of the contact hole and the through hole, and there is a drawback that a stable high yield cannot be obtained.
本発明の目的は安定した高歩留りを得る反応性イオンエ
ッチング方法を提供することにある。An object of the present invention is to provide a reactive ion etching method capable of obtaining stable and high yield.
上述した従来の反応性イオンエッチング方法に対し、本
発明は本来絶縁膜に対して反応性のガスではない酸素を
エッチングガスとして用い、更に少量の前記炭素化合物
を添加することによって高いエッチングレートでコンタ
クト抵抗、スルーホール抵抗の小さいコンタクトホール
及びスルーホールを開孔するという独創的内容を有す
る。In contrast to the conventional reactive ion etching method described above, the present invention uses oxygen, which is not a gas that is originally reactive with an insulating film, as an etching gas, and further adds a small amount of the carbon compound to make a contact at a high etching rate. Resistance, through hole It has the original content of opening contact holes and through holes with low resistance.
前記目的を達成するため、本発明に係る反応性イオンエ
ッチング方法は、半導体装置上に形成するコンタクトホ
ール及びスルーホールを反応性イオンエッチングする反
応性イオンエッチング方法であって、 反応性イオンエッチング用の反応ガスとしては、酸素
と、少なくともフッ素と水素のいずれかを含む炭素化合
物との混合ガスを用い、 酸素に添加する炭素化合物の流量比は、金属−金属配線
間の電気抵抗を安定させる20％〜40％の範囲に設定する
ものである。In order to achieve the above object, a reactive ion etching method according to the present invention is a reactive ion etching method for performing reactive ion etching on a contact hole and a through hole formed on a semiconductor device. As the reaction gas, a mixed gas of oxygen and a carbon compound containing at least one of fluorine and hydrogen is used, and the flow ratio of the carbon compound added to oxygen is 20% which stabilizes the electrical resistance between the metal and the metal wiring. It should be set in the range of -40%.
次に、本発明の一実施例について図面を参照して説明す
る。Next, an embodiment of the present invention will be described with reference to the drawings.
（実施例１） 第１図は本発明による反応性イオンエッチング方法を用
いた場合の半導体装置上のコンタクトホール部の断面構
造の一例を示した図である。第２図は本発明による反応
性イオンエッチング方法を用いた場合の半導体装置上の
スルーホール部の断面構造の一例を示した図である。第
１図ではシリコン基盤３上に、第２図では第１層金属配
線層１上にそれぞれ反応生成物の堆積は起きていない。
第１図，第２図において、３はシリコン基盤、２は絶縁
膜、１は第１層金属配線層、４はコンタクトホール、５
は金属配線層間絶縁膜、６は第２層金属配線層、７はス
ルーホールである。第３図は酸素と酸素に添加する前記
炭素化合物の流量比と絶縁膜のエッチングレート指数と
の関係を求めた図の一例である。第４図は酸素と酸素に
添加する前記炭素化合物の流量比とスルーホールの比抵
抗との関係を求めた図の一例である。Example 1 FIG. 1 is a diagram showing an example of a sectional structure of a contact hole portion on a semiconductor device when the reactive ion etching method according to the present invention is used. FIG. 2 is a view showing an example of a sectional structure of a through hole portion on a semiconductor device when the reactive ion etching method according to the present invention is used. In FIG. 1, deposition of reaction products has not occurred on the silicon substrate 3 and in FIG. 2 on the first metal wiring layer 1.
In FIGS. 1 and 2, 3 is a silicon substrate, 2 is an insulating film, 1 is a first-layer metal wiring layer, 4 is a contact hole, 5
Is a metal wiring interlayer insulating film, 6 is a second metal wiring layer, and 7 is a through hole. FIG. 3 is an example of a diagram showing the relationship between the flow rate ratio of oxygen and the carbon compound added to oxygen and the etching rate index of the insulating film. FIG. 4 is an example of a diagram in which the relationship between the flow rate ratio of oxygen and the carbon compound added to oxygen and the specific resistance of the through hole is obtained.
本発明による反応性イオンエッチング方法は、コンタク
トホール及びスルーホールを反応性イオンエッチングに
よって開孔させる際に、反応性ガスとして、酸素に、少
なくともフッ素と水素のいずれかを含む炭素化合物を20
％〜40％の流量比で少量添加して用いる。本発明によれ
ば、エッチング反応を抑制する反応生成物の堆積が少な
いので、得られるエッチングレートは高いばかりでな
く、下地膜であるシリコン基盤上及び第１層金属配線層
上に堆積する反応生成物も少ないので、コンタクト抵抗
及びスルーホール抵抗は安定して小さく、高品質のコン
タクトホール及びスルーホールのエッチングを行うこと
が可能となる。In the reactive ion etching method according to the present invention, when a contact hole and a through hole are opened by reactive ion etching, oxygen is used as a reactive gas, and a carbon compound containing at least either fluorine or hydrogen is used as a reactive gas.
Used by adding a small amount at a flow rate ratio of 40% to 40%. According to the present invention, since the amount of reaction products that suppress the etching reaction is small, not only the obtained etching rate is high, but also the reaction products that are deposited on the silicon substrate as the base film and the first metal wiring layer are formed. Since there are few objects, the contact resistance and the through hole resistance are stably small, and it becomes possible to perform the etching of the contact hole and the through hole with high quality.
本発明によれば、第３図から絶縁膜のエッチングレート
指数は酸素と酸素に添加する前記炭素化合物の流量比が
20％〜40％の範囲内で極値をとって大きな値が得られ
る。またスルーホールの比抵抗値は前記炭素化合物の流
量が多くなるほど増大する。従って上記流量比の範囲内
でコンタクトホール、スルーホールの反応性イオンエッ
チングを行うと、高いエッチングレートで高品質のコン
タクトホール、スルーホールの開孔を行うことができ
る。According to the present invention, as shown in FIG. 3, the etching rate index of the insulating film is the flow rate ratio of oxygen and the carbon compound added to oxygen.
Large values are obtained by taking extreme values within the range of 20% to 40%. Further, the specific resistance value of the through hole increases as the flow rate of the carbon compound increases. Therefore, when the reactive ion etching of the contact hole and the through hole is performed within the range of the above flow rate ratio, it is possible to open the contact hole and the through hole with high quality at a high etching rate.
第５図と第６図はそれぞれ従来の技術を用いて、半導体
装置上のコンタクトホール及びスルーホールを開孔した
場合の断面構造を示した図の一例である。第５図ではシ
リコン基盤３上に、第６図では第１層金属配線層１上に
それぞれ反応生成物８の堆積が見られ、コンタクトホー
ル、スルーホールの品質のバラツキが生じる原因とな
る。FIG. 5 and FIG. 6 are each an example of a cross-sectional structure when a contact hole and a through hole on a semiconductor device are opened by using a conventional technique. Deposition of reaction products 8 is seen on the silicon substrate 3 in FIG. 5 and on the first metal wiring layer 1 in FIG. 6, which causes variations in the quality of the contact holes and through holes.
（実施例２） 第７図は実施例１の反応性ガスに更にアルゴンやヘリウ
ムなどの不活性単原子ガスを一定流量添加した場合のス
ルーホールの比抵抗と実施例１のガス流量比との関係を
求めた図の一例である。(Embodiment 2) FIG. 7 shows the through-hole resistivity and the gas flow rate ratio of Embodiment 1 when a constant flow rate of an inert monatomic gas such as argon or helium is added to the reactive gas of Example 1. It is an example of a diagram in which a relationship is obtained.
この実施例では、実施例１の第４図でのスルーホールの
比抵抗値に比較して更にスルーホールの比抵抗値が小さ
くなるという利点がある。This embodiment has an advantage that the specific resistance value of the through hole becomes smaller than that of the through hole shown in FIG. 4 of the first embodiment.
以上説明したように本発明による反応性イオンエッチン
グ方法は、コンタクトホール及びスルーホールを反応性
イオンエッチングによって開孔させる際に、反応性ガス
として酸素に少なくともフッ素と水素のいずれかを含む
炭素化合物を20％〜40％の流量比で少量添加して用いる
ことにより、エッチング反応を抑制する反応生成物の堆
積が少なく、得られるエッチングレートは高いばかりで
なく、下地膜であるシリコン基盤上及び第１層金属配線
層上に堆積する反応生成物も少ないので、コンタクト抵
抗及びスルーホール抵抗は安定して小さく、高品質のコ
ンタクトホール及びスルーホールのエッチングを行うこ
とができ、安定した高歩留りを得ることができる効果を
有するものである。As described above, in the reactive ion etching method according to the present invention, when a contact hole and a through hole are opened by reactive ion etching, a carbon compound containing at least either fluorine or hydrogen is added to oxygen as a reactive gas. By adding a small amount at a flow rate ratio of 20% to 40%, the reaction product that suppresses the etching reaction is less deposited, and the obtained etching rate is high, and also on the silicon substrate that is the base film and the first film. Since the reaction products deposited on the layer metal wiring layer are also small, the contact resistance and the through-hole resistance are stable and small, and it is possible to perform high-quality etching of contact holes and through-holes, and to obtain a stable high yield. It has the effect of being able to
第１図は本発明による反応性イオンエッチング方法を用
いた場合の半導体装置上のコンタクトホール部の断面構
造を示した図、第２図は本発明による反応性イオンエッ
チング方法を用いた場合の半導体装置上のスルーホール
部の断面構造を示した図、第３図は酸素と酸素に添加す
る前記炭素化合物の流量比と絶縁膜のエッチングレート
指数との関係を示す図、第４図，第７図は酸素と酸素に
添加する炭素化合物の流量比とスルーホールの比抵抗と
の関係を示す図、第５図及び第６図はそれぞれ従来の反
応性イオンエッチング方法を用いて半導体装置上のコン
タクトホール及びスルーホールを開孔した場合の断面構
造を示した図である。 １……第１層金属配線層、２……絶縁膜、３……シリコ
ン基盤、４……コンタクトホール、５……金属配線層間
絶縁膜、６……第２層金属配線層、７……スルーホー
ル、８……反応生成物の堆積物FIG. 1 is a diagram showing a sectional structure of a contact hole portion on a semiconductor device when the reactive ion etching method according to the present invention is used, and FIG. 2 is a semiconductor when the reactive ion etching method according to the present invention is used. FIG. 3 is a diagram showing a cross-sectional structure of a through hole portion on the apparatus, FIG. 3 is a diagram showing a relationship between a flow rate ratio of oxygen and the carbon compound added to oxygen and an etching rate index of an insulating film, FIG. 4, FIG. The figure shows the relationship between the flow rate ratio of oxygen and the carbon compound added to oxygen and the specific resistance of the through hole. FIGS. 5 and 6 show the contact on the semiconductor device using the conventional reactive ion etching method. It is the figure which showed the cross-section when opening a hole and a through hole. 1 ... First layer metal wiring layer, 2 ... Insulating film, 3 ... Silicon substrate, 4 ... Contact hole, 5 ... Metal wiring interlayer insulating film, 6 ... Second layer metal wiring layer, 7 ... Through hole, 8 ... Deposit of reaction product
Claims (1)
及びスルーホールを反応性イオンエッチングする反応性
イオンエッチング方法であって、 反応性イオンエッチング用の反応ガスとしては、酸素
と、少なくともフッ素と水素のいずれかを含む炭素化合
物との混合ガスを用い、 酸素に添加する炭素化合物の流量比は、金属−金属配線
間の電気抵抗を安定させる20％〜40％の範囲に設定する
ことを特徴とする反応性イオンエッチング方法。1. A reactive ion etching method for reactive ion etching of a contact hole and a through hole formed on a semiconductor device, wherein a reactive gas for reactive ion etching is oxygen and at least fluorine and hydrogen. Using a mixed gas with a carbon compound containing any of the above, the flow rate ratio of the carbon compound added to oxygen is set in the range of 20% to 40% which stabilizes the electric resistance between the metal and the metal wiring. Reactive ion etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61276095A JPH0691046B2 (en) | 1986-11-19 | 1986-11-19 | Reactive ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61276095A JPH0691046B2 (en) | 1986-11-19 | 1986-11-19 | Reactive ion etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63128720A JPS63128720A (en) | 1988-06-01 |
| JPH0691046B2 true JPH0691046B2 (en) | 1994-11-14 |
Family
ID=17564732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61276095A Expired - Lifetime JPH0691046B2 (en) | 1986-11-19 | 1986-11-19 | Reactive ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691046B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114235A (en) * | 1981-01-08 | 1982-07-16 | Toshiba Corp | Cleaning of semiconductor substrate |
| DE3686721D1 (en) * | 1986-10-08 | 1992-10-15 | Ibm | METHOD FOR PRODUCING A CONTACT OPENING WITH A DESIRED SLOPE IN A COMPOSED LAYER MASKED WITH PHOTORESIST. |
-
1986
- 1986-11-19 JP JP61276095A patent/JPH0691046B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63128720A (en) | 1988-06-01 |
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