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JPH0695479B2 - Microwave plasma generator - Google Patents
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JPH0695479B2 - Microwave plasma generator - Google Patents

Microwave plasma generator

Info

Publication number
JPH0695479B2
JPH0695479B2 JP60240070A JP24007085A JPH0695479B2 JP H0695479 B2 JPH0695479 B2 JP H0695479B2 JP 60240070 A JP60240070 A JP 60240070A JP 24007085 A JP24007085 A JP 24007085A JP H0695479 B2 JPH0695479 B2 JP H0695479B2
Authority
JP
Japan
Prior art keywords
microwave
plasma
waveguide
dielectric
plasma generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60240070A
Other languages
Japanese (ja)
Other versions
JPS6299481A (en
Inventor
恭一 小町
純夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP60240070A priority Critical patent/JPH0695479B2/en
Publication of JPS6299481A publication Critical patent/JPS6299481A/en
Publication of JPH0695479B2 publication Critical patent/JPH0695479B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、マイクロ波プラズマ発生装置の改良に関する
ものである。
TECHNICAL FIELD The present invention relates to an improvement of a microwave plasma generator.

(従来の技術) 低圧ガスの放電によって生成した低温プラズマは、系全
体が低温でありながら様々な化学反応を促進するため、
無機材料と有機材料のいずれにも適用でき、極めて応用
範囲が広く、半導体の製造プロセス、高分子材料、金属
の表面改質等に用いられている。
(Prior Art) Low-temperature plasma generated by the discharge of low-pressure gas promotes various chemical reactions while the entire system is at low temperature.
It can be applied to both inorganic and organic materials and has a very wide range of applications, and is used for semiconductor manufacturing processes, polymer materials, surface modification of metals, and the like.

しかして、この低温プラズマを発生させるために、従来
の研究開発・実用機では主にラジオ波(13.56MHz)によ
り励起させる方法が用いられていたが、マイクロ波を用
いる方が効率・装置の点で有利であることが知られてい
る(広瀬:マイクロ波放電プラズマとその装置、塗装技
術、19,〔1〕,(1980),100〜105頁)。有利な点を以
下に示す。
However, in order to generate this low-temperature plasma, the method of exciting by radio waves (13.56MHz) was mainly used in the conventional R & D / practical machines, but using microwaves is more efficient and more efficient. Are known to be advantageous (Hirose: Microwave discharge plasma and its equipment, coating technology, 19, [1], (1980), pages 100 to 105). The advantages are shown below.

電子温度Teとガス温度Tgの比Te/Tgが大きく、より低
温のプラズマが得られる。
The ratio Te / Tg of the electron temperature Te and the gas temperature Tg is large, and a lower temperature plasma can be obtained.

電極を必要としないので、電極からの汚染を防ぐこと
ができる。
Since no electrode is required, contamination from the electrode can be prevented.

マイクロ波の電力を局所的に注入でき、外部空間への
不用な放射損失がなく、高密度のプラズマが生成でき
る。
Microwave power can be injected locally, there is no unnecessary radiation loss to the external space, and high-density plasma can be generated.

発振器が簡単である。The oscillator is simple.

導波管でマイクロ波を伝送するため放射損失がなく、
整合が簡単な構造でできる。
There is no radiation loss because microwaves are transmitted through the waveguide,
The structure can be easily adjusted.

ところで、従来のマイクロ波を利用したプラズマ発生装
置としては、以下の構造のものが知られている。
By the way, as a conventional plasma generator using microwaves, one having the following structure is known.

生成部・処理室分離型(前記文献) 従来よりよく知られている構造で、導波管中に石英管を
貫通させ、石英管中でプラズマを発生させるもの。な
お、処理容器は別途設け、被処理物はプラズマから離れ
た下流に設置する。
Generator / Processing chamber separation type (above document) A well-known structure in which a quartz tube is penetrated into a waveguide to generate plasma in the quartz tube. A processing container is separately provided, and the object to be processed is installed downstream from the plasma.

金属アンテナ型(特公昭57-53858、特開昭57-9868、
特開昭56-41382) 金属アンテナを用いて導波管からマイクロ波を別の大容
量の処理容器内に導入し、該処理容器内でプラズマを発
生させるもの。
Metal antenna type (JP-B-57-53858, JP-A-57-9868,
JP-A-56-41382) A method in which a microwave is introduced from a waveguide into another large-capacity processing container by using a metal antenna, and plasma is generated in the processing container.

周期構造型(R.G.Bosisio,C.F.Weissfloch,M.R.Werth
eimer:The Large Volume Microwave Plasma Generator,
J.Microwave Power,7(4),1972) 導波管より周期構造を利用した開放線路にマイクロ波を
導入し、前記開放線路下に設けた石英管内にプラズマを
発生させるもの。
Periodic structure type (RGBosisio, CFWeissfloch, MRWerth
eimer: The Large Volume Microwave Plasma Generator,
J. Microwave Power, 7 (4), 1972) A microwave is introduced from a waveguide into an open line using a periodic structure to generate plasma in a quartz tube provided below the open line.

(発明が解決しようとする問題点) しかしながら、前記の構造のものは、プラズマ生成部
が導波管の大きさで限定される為、多量の試料や大型の
試料の処理が行なえない。また、この構造のものは、プ
ラズマによるマイクロ波の反射が大きく効率が悪い。
(Problems to be Solved by the Invention) However, in the case of the above-mentioned structure, since the plasma generation part is limited by the size of the waveguide, it is impossible to process a large amount of samples or large samples. Further, in this structure, the microwave is largely reflected by the plasma and the efficiency is low.

また、の構造のものは、比較的径の大きな石英管にプ
ラズマを発生させることができるために多数処理が可能
であるが、アンテナと導波管との整合がむずかしく、プ
ラズマが不均一になりやすい為、その改善のための装置
が複雑になる。
Also, with the structure of, since it is possible to generate a large number of plasmas in a quartz tube having a relatively large diameter, it is difficult to match the antenna and the waveguide, and the plasma becomes non-uniform. Since it is easy, the device for the improvement becomes complicated.

更に、の構造のものは、周期構造型線路と導波管の整
合をとるために幅広いものができず、細長いプラズマし
か発生できない(前記文献によれば外径19mmの石英ガラ
ス管内でプラズマを発生させている。)また、前記線路
の構造も複雑であるという問題がある。
In addition, the structure of (1) cannot be widened to match the periodic structure type waveguide and the waveguide, and only elongated plasma can be generated (according to the above document, plasma is generated in a quartz glass tube with an outer diameter of 19 mm. In addition, there is a problem that the structure of the line is complicated.

そこで、本出願人は上記問題点に鑑みて、マイクロ波を
用いて大面積かつ均一なプラズマを比較的簡単な構造で
安定して発生できるマイクロ波プラズマ発生装置を備え
たマイクロ波プラズマ処理装置を特願昭60-143036号で
提案した。
Therefore, in view of the above problems, the present applicant has proposed a microwave plasma processing apparatus equipped with a microwave plasma generator capable of stably generating a large-area and uniform plasma using microwaves with a relatively simple structure. Proposed in Japanese Patent Application No. 60-143036.

本発明は、本出願人が先に提案した特願昭60-143036号
の発明の構成要素であるマイクロ波プラズマ発生装置を
更に改良したものである。
The present invention is a further improvement of the microwave plasma generator which is a constituent element of the invention of Japanese Patent Application No. 60-143036 previously proposed by the present applicant.

(問題点を解決するための手段) 本発明は、マイクロ波発振器と、該マイクロ波発振器か
らのマイクロ波を伝送する導波管と、該導波管に接続さ
れた誘電体被覆線路と、該誘電体被覆線路に対向配置さ
れるマイクロ波導入窓を有する反応器とを備えたマイク
ロ波プラズマ発生装置において、誘電体被覆線路とマイ
クロ波導入窓との間の空間領域に、前記マイクロ波を反
射せしめるための移動可能な反射板を有することを要旨
とするマイクロ波プラズマ発生装置である。
(Means for Solving Problems) The present invention relates to a microwave oscillator, a waveguide for transmitting a microwave from the microwave oscillator, a dielectric covered line connected to the waveguide, and In a microwave plasma generator provided with a reactor having a microwave introduction window arranged opposite to the dielectric covered line, the microwave is reflected in a space region between the dielectric covered line and the microwave introduction window. It is a microwave plasma generator characterized in that it has a movable reflecting plate for crimping.

ここで、本発明装置の構成要素である誘電体被覆線路に
反射板を移動可能に付設するのは次の理由による。
Here, the reason why the reflector is movably attached to the dielectric covered line which is a component of the device of the present invention is as follows.

すなわち、プラズマが発生すると誘電体被覆線路の共振
周波数が変化して前記誘電体被覆線路からマイクロ波発
振器の方に戻ってくるマイクロ波が大きくなる。この
時、反射板を前後に移動させることによって共振周波数
を変化させ、もってマイクロ波の周波数である2.45GHz
に合致させ、反射波を小さくできるからである。
That is, when plasma is generated, the resonance frequency of the dielectric covered line changes, and the microwave that returns from the dielectric covered line toward the microwave oscillator increases. At this time, the resonance frequency is changed by moving the reflector back and forth, and the microwave frequency is 2.45 GHz.
This is because the reflected wave can be made smaller by matching with.

(作用) 本発明は、誘電体被覆線路とこれに対向配置されるマイ
クロ波導入窓との間の空間領域に、マイクロ波を反射せ
しめるための移動可能な反射板を有した構成としたの
で、マイクロ波の反射を小さくできる。
(Operation) Since the present invention is configured to have a movable reflection plate for reflecting microwaves in the space area between the dielectric covered line and the microwave introduction window arranged opposite thereto, The reflection of microwaves can be reduced.

(実施例) 以下本発明を添付図面に基づいて説明する。(Example) The present invention will be described below with reference to the accompanying drawings.

図面において、1はマイクロ波発振器であり、ここから
例えば2.45GHzのマイクロ波が発生され、導波管2(WRI
-22,109.22mm×54.61mm)より伝送される。
In the drawing, reference numeral 1 is a microwave oscillator, from which a microwave of, for example, 2.45 GHz is generated, and a waveguide 2 (WRI
-22,109.22mm × 54.61mm).

3は前記導波管2に連通された誘電体被覆線路であり、
該誘電体被覆線路3を構成する誘電体層4には例えばテ
フロン、ポリスチレン、ポリエチレン等の誘電損失の小
さい物質が採用されている。すなわち、この誘電体層4
は表面波導波路として電磁界の集中をもたらし、また、
当該表面波は光の速度より遅い遅波となる為、マイクロ
波のエネルギーを有効にガスに伝達し、プラズマを発生
させることができるのである。
Reference numeral 3 is a dielectric covered line communicated with the waveguide 2,
The dielectric layer 4 constituting the dielectric covered line 3 is made of a material having a small dielectric loss such as Teflon, polystyrene or polyethylene. That is, this dielectric layer 4
As a surface wave waveguide brings the concentration of electromagnetic field, and
Since the surface wave is a slow wave slower than the speed of light, microwave energy can be effectively transmitted to the gas to generate plasma.

また、本例のように導波管2と誘電体被覆線路3を別体
構成すれば誘電体層4の幅を導波管2の幅に比較して広
くできる為、大面積のプラズマを発生させることができ
る。
Further, if the waveguide 2 and the dielectric covered line 3 are separately configured as in this example, the width of the dielectric layer 4 can be made wider than the width of the waveguide 2, so that a large area plasma is generated. Can be made.

5は前記誘電体被覆線路3の終端に付設された反射板で
あり、導波管2方向への接離移動が可能なように成され
ている。すなわち、この反射板5を移動させることによ
ってプラズマ発生後の共振点の移動に追従し、マイクロ
波の反射を最小にし電界強度を大きくして効率を高める
のである。
Reference numeral 5 denotes a reflecting plate attached to the end of the dielectric covered line 3, which is configured to be movable toward and away from the waveguide 2. That is, by moving the reflection plate 5, the movement of the resonance point after plasma generation is followed, the reflection of microwaves is minimized, the electric field strength is increased, and the efficiency is increased.

6は前記誘電体被覆線路3の下方に配設された反応器で
あり、この上面にはマイクロ波導入窓として誘電損失の
小さな耐熱性物質、例えば石英ガラス板7が載置されて
おり、これを通してマイクロ波を反応器6内に導入する
ようになされている。
Reference numeral 6 denotes a reactor arranged below the dielectric covered line 3, on which a heat resistant material having a small dielectric loss, for example, a quartz glass plate 7 is placed as a microwave introduction window. Through which microwaves are introduced into the reactor 6.

8は反応器6の下方に配設された傾斜角度調整部材、9
はガスボンベや流量計を備えたガス導入装置、10は排気
装置である。
8 is a tilt angle adjusting member disposed below the reactor 6, 9
Is a gas introduction device equipped with a gas cylinder and a flow meter, and 10 is an exhaust device.

次に、本発明装置を用いてプラズマを発生させる手順を
以下に説明する。
Next, a procedure for generating plasma using the device of the present invention will be described below.

先ず、反応器6内を低真空又は高真空になるまで排気
し、この状態の反応器6内にガスを導入する。
First, the reactor 6 is evacuated to a low vacuum or a high vacuum, and a gas is introduced into the reactor 6 in this state.

次に、マイクロ波発振器1を作動させてマイクロ波を発
振させ、プラズマを発生させる。しかる後、反射板5を
移動させてマイクロ波の反射を最小にする。
Next, the microwave oscillator 1 is operated to oscillate microwaves to generate plasma. After that, the reflection plate 5 is moved to minimize the reflection of microwaves.

(実験結果) 第1図に示す本発明装置を用いてプラズマを発生させ
た。
(Experimental Results) Plasma was generated using the apparatus of the present invention shown in FIG.

本実験では、2.45GHzマイクロ波発振器を用い、また、
誘電体層には幅200mm、長さ484mm、厚さ20mmのテフロン
を使用した。
In this experiment, a 2.45 GHz microwave oscillator was used.
Teflon having a width of 200 mm, a length of 484 mm and a thickness of 20 mm was used for the dielectric layer.

但し、導波管と誘電体被覆線路の結合部における反射を
小さくして電界分布を乱さないように、第2図に示すよ
うな形状のテフロンを導波管内に挿入し、また、誘電体
被覆線路内のテフロンも第3図に示すように120mmの長
さに亘ってテーパをつけた。なお、第2図中λgは管内
波長、λは誘電体の表面波の波長を表わしている。
However, in order not to disturb the electric field distribution by reducing the reflection at the coupling portion between the waveguide and the dielectric coated line, insert a Teflon having a shape as shown in FIG. The Teflon in the track was also tapered over the length of 120 mm as shown in FIG. In FIG. 2, λg represents the wavelength inside the tube, and λ represents the wavelength of the surface wave of the dielectric.

また、反射板は幅200mm、高さ40mmのものを使用し、石
英ガラス板は幅200mm、長さ300mmのものを使用した。
Further, a reflector having a width of 200 mm and a height of 40 mm was used, and a quartz glass plate having a width of 200 mm and a length of 300 mm was used.

このような形状、寸法のプラズマ発生装置の反応器に、
プラズマ発生ガスとして空気を導入し、ガス圧10Pa、マ
イクロ波電力1KW、誘電体被覆線路のマイクロ波導入口
部分(第1図における左端)でのテフロンとプラズマ発
生部の距離を60mmとし、反応器を5°傾けてプラズマを
発生させたところプラズマは200mm×300mm全域に均一に
発生した。
In the reactor of the plasma generator of such shape and size,
Air was introduced as the plasma generation gas, gas pressure was 10 Pa, microwave power was 1 KW, the distance between the Teflon and the plasma generation part at the microwave introduction port of the dielectric covered line (left end in Fig. 1) was 60 mm, and the reactor was When the plasma was generated while tilted at 5 °, the plasma was uniformly generated over the entire area of 200 mm × 300 mm.

(発明の効果) 以上説明したように本発明は、誘電体被覆線路とマイク
ロ波導入窓との間の空間領域に、マイクロ波を反射せし
めるための移動可能な反射板を有した構成としたので、
マイクロ波の反射を小さくできて、プラズマを広い範囲
にわたって発生させることができ、多量の処理材を一度
に処理したり、また、大型の処理材を処理できる。更に
本発明装置は整合も簡単にとれる為、装置の構造や調整
を簡単にできる等益するところ大なる効果を有する。
(Effects of the Invention) As described above, the present invention has a movable reflection plate for reflecting microwaves in the space region between the dielectric covered line and the microwave introduction window. ,
Microwave reflection can be reduced, plasma can be generated over a wide range, and a large amount of processing materials can be processed at once, or a large processing material can be processed. Further, since the device of the present invention can be easily aligned, it has a great effect that the structure and adjustment of the device can be simplified.

【図面の簡単な説明】[Brief description of drawings]

図面は本発明に係るマイクロ波プラズマ発生装置の一実
施例を示すもので、第1図(イ)は正面図中央縦断面
図、(ロ)は側面図、第2図は導波管と誘電体被覆線路
の接合部を示す図面、第3図は誘電体層の平面図であ
る。 1はマイクロ波発振器、2は導波管、3は誘電体被覆線
路、5は反射板、6は反応器、8は傾斜角度調整部材。
The drawings show an embodiment of a microwave plasma generator according to the present invention. Fig. 1 (a) is a front view central longitudinal sectional view, (b) is a side view, and Fig. 2 is a waveguide and a dielectric. FIG. 3 is a plan view of the dielectric layer, showing the joint of the body-covered line. 1 is a microwave oscillator, 2 is a waveguide, 3 is a dielectric covered line, 5 is a reflector, 6 is a reactor, and 8 is a tilt angle adjusting member.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】マイクロ波発振器と、該マイクロ波発振器
からのマイクロ波を伝送する導波管と、該導波管に接続
された誘電体被覆線路と、該誘電体被覆線路に対向配置
されるマイクロ波導入窓を有する反応器とを備えたマイ
クロ波プラズマ発生装置において、誘電体被覆線路とマ
イクロ波導入窓との間の空間領域に、前記マイクロ波を
反射せしめるための移動可能な反射板を有することを特
徴とするマイクロ波プラズマ発生装置。
1. A microwave oscillator, a waveguide for transmitting microwaves from the microwave oscillator, a dielectric covered line connected to the waveguide, and a dielectric covered line opposed to the dielectric covered line. In a microwave plasma generator provided with a reactor having a microwave introduction window, a movable reflection plate for reflecting the microwave is provided in a space region between the dielectric covered line and the microwave introduction window. A microwave plasma generator characterized by having.
JP60240070A 1985-10-25 1985-10-25 Microwave plasma generator Expired - Fee Related JPH0695479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60240070A JPH0695479B2 (en) 1985-10-25 1985-10-25 Microwave plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60240070A JPH0695479B2 (en) 1985-10-25 1985-10-25 Microwave plasma generator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6103798A Division JP2570170B2 (en) 1994-05-18 1994-05-18 Microwave plasma generator

Publications (2)

Publication Number Publication Date
JPS6299481A JPS6299481A (en) 1987-05-08
JPH0695479B2 true JPH0695479B2 (en) 1994-11-24

Family

ID=17054041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60240070A Expired - Fee Related JPH0695479B2 (en) 1985-10-25 1985-10-25 Microwave plasma generator

Country Status (1)

Country Link
JP (1) JPH0695479B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0723386B1 (en) * 1994-07-14 1999-09-22 Sumitomo Metal Industries, Ltd. Plasma processing device
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US5707452A (en) * 1996-07-08 1998-01-13 Applied Microwave Plasma Concepts, Inc. Coaxial microwave applicator for an electron cyclotron resonance plasma source
TW409487B (en) 1998-04-10 2000-10-21 Sumitomo Metal Ind Microwave plasma treatment apparatus and microwave plasma treatment method
JP4014300B2 (en) 1998-06-19 2007-11-28 東京エレクトロン株式会社 Plasma processing equipment
US6246175B1 (en) 1999-10-25 2001-06-12 National Science Council Large area microwave plasma generator

Also Published As

Publication number Publication date
JPS6299481A (en) 1987-05-08

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