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JPH0695539B2 - Wire bonding method - Google Patents
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JPH0695539B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH0695539B2
JPH0695539B2 JP13127689A JP13127689A JPH0695539B2 JP H0695539 B2 JPH0695539 B2 JP H0695539B2 JP 13127689 A JP13127689 A JP 13127689A JP 13127689 A JP13127689 A JP 13127689A JP H0695539 B2 JPH0695539 B2 JP H0695539B2
Authority
JP
Japan
Prior art keywords
wire
bonding
capillary
point
bonding point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13127689A
Other languages
Japanese (ja)
Other versions
JPH02310937A (en
Inventor
淳一 及川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP13127689A priority Critical patent/JPH0695539B2/en
Publication of JPH02310937A publication Critical patent/JPH02310937A/en
Publication of JPH0695539B2 publication Critical patent/JPH0695539B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07521Aligning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体デバイスの組立工程において、第1ボ
ンディング点例えばICチップ上の電極と、第2ボンディ
ング点例えば外部リードとの間にワイヤをループ状に架
け渡して電気的に接続するワイヤボンディング方法に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention provides a wire between a first bonding point, for example, an electrode on an IC chip and a second bonding point, for example, an external lead, in a semiconductor device assembling process. The present invention relates to a wire bonding method of connecting in a loop and electrically connecting them.

〔従来の技術〕[Conventional technology]

従来、ワイヤを架け渡すときにワイヤを的確にループ形
状に賦形せしめるために種々の工夫がなされているが、
キャピラリの軌跡を第4図に示すように、第1ボンディ
ング点2のボンディング終了後に、キャピラリを少し上
昇させ続いて第2ボンディング点3と反対の方向に僅か
に水平に移動させることにより、ワイヤ1のループ形状
の頂部4となるべき付近に折曲くせをつけ、次いでキャ
ピラリを所定の高さまで上昇させ、曲線軌道と垂直下降
軌道をもって第2ボンディング点3へ移動させて第2ボ
ンディングを行うことが提案されている(特開昭63-421
35号公報参照)。
Conventionally, various efforts have been made to accurately shape the wire into a loop shape when bridging the wire.
After the bonding at the first bonding point 2 is completed, as shown in FIG. 4, the trajectory of the capillary is raised slightly and then moved slightly horizontally in the direction opposite to the second bonding point 3 so that the wire 1 It is possible to perform a second bonding by making a bend near the loop-shaped top 4 of the above, then raising the capillary to a predetermined height, and moving it to the second bonding point 3 with a curved track and a vertical descending track. Proposed (JP-A-63-421)
No. 35).

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかしながら、この方法の前半部の折曲くせつけ方法
は、第5図(ループ形成後の状態で示している)に示す
ように、ワイヤ立ち上り基部5に皺6や亀裂7などの損
傷を与え易く、ワイヤボンディングにおける信頼性に大
きな影響を及ぼす。
However, as shown in FIG. 5 (shown in the state after loop formation), the bent half-fitting method of the first half of this method is likely to cause damage to the wire rising base 5 such as wrinkles 6 and cracks 7. , Greatly affects reliability in wire bonding.

また、上昇移動と水平後退移動をそれぞれ単独に行うた
め所要時間の増大を招き、半導体デバイス組立工程にお
ける生産性の向上の妨げになる。
Further, since the ascending movement and the horizontal retreat movement are separately performed, the required time is increased, which hinders the improvement of productivity in the semiconductor device assembly process.

さらにこの方法の後半部の第2ボンディング点3への移
動に垂直下降軌道を用いるため垂直に下降し始めるA点
で第6図に示すようにキャピラリ8先端の近傍に大きな
ワイヤの垂れ9が発生し、キャピラリ8が第2ボンディ
ング点に到達した時点には第7図に示すように第2ボン
ディング点3の近傍に実測で0.35から0.4mm程度の平坦
な領域が形成されることがわかった。この場合ワイヤの
垂れ9が、第2ボンディング点3例えば外部リードの表
面に乗らないと、第1ボンディング点2と第2ボンディ
ング点3との間に接続されたワイヤ1にボンディング不
良となるループの垂れや曲がりが発生しやすくなる。こ
の傾向は、外部リードの幅が狭いリードフレームを用い
た多ピンの半導体デバイスのワイヤボンディングにおい
て著しい。
Further, since a vertical descending orbit is used to move the latter half of this method to the second bonding point 3, a large wire sag 9 is generated near the tip of the capillary 8 at the point A which starts to descend vertically. Then, when the capillary 8 reached the second bonding point, it was found that a flat region of about 0.35 to 0.4 mm was actually formed near the second bonding point 3 as shown in FIG. In this case, if the wire sagging 9 does not reach the second bonding point 3, for example, the surface of the external lead, the wire 1 connected between the first bonding point 2 and the second bonding point 3 may have a defective bonding loop. Dripping and bending are likely to occur. This tendency is remarkable in wire bonding of a multi-pin semiconductor device using a lead frame having a narrow outer lead.

本発明は、これら従来の問題点を解決しようとするもの
であり、ワイヤ立ち上り基部の皺や亀裂などの損傷を軽
減するとともに、所要時間をできるだけ短縮し、しかも
ワイヤの垂れや曲がりを軽減することができワイヤの高
さや形状を安定させることができるワイヤボンディング
方法を提供することを目的とするものである。
The present invention is intended to solve these conventional problems, and to reduce damage such as wrinkles and cracks in the wire rising base, shorten the required time as much as possible, and reduce the sagging and bending of the wire. It is an object of the present invention to provide a wire bonding method capable of stabilizing the height and shape of the wire.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明は、第1ボンディング点と第2ボンディング点と
の間をワイヤで接続するワイヤボンディング方法におい
て、第1ボンディング終了後、キャピラリを上昇させな
がら第2ボンディング点と反対の方向に移動させて略放
物線状の曲線軌道でワイヤ立ち上り部を繰り出し、次い
でキャピラリを所定の位置へ上昇させて所定量のワイヤ
をさらに繰り出し、その後キャピラリを前記上昇点と第
2ボンディング点とを結ぶ直線下降軌道のない曲線軌道
をもって第2ボンディング点へ移動させて、第2ボンデ
ィングを行うことを特徴とするワイヤボンディング方法
である。
The present invention relates to a wire bonding method for connecting a wire between a first bonding point and a second bonding point, and after the first bonding is completed, the capillary is raised and moved in a direction opposite to the second bonding point. A curve without a straight descending trajectory connecting the rising point and the second bonding point to the capillary by raising the wire rising portion in a parabolic curved trajectory and then raising the capillary to a prescribed position to further retract a predetermined amount of wire. The wire bonding method is characterized in that the second bonding is performed by moving the orbit to a second bonding point.

〔作用〕[Action]

本発明は、第1ボンディング終了後、キャピラリを上昇
させながら第2ボンディング点と反対の方向に略放物線
状の曲線軌道で移動させて、即ち、例えば直線軌道をも
たない曲線軌道で、ワイヤ立ち上り部(ループを形成し
たときに第1ボンディング点上でほぼ垂直に立ち上る部
分)を繰り出すので、力が一点に集中しないで分散させ
てワイヤに無理な力が加わることなくワイヤ立ち上り部
上端部(キャピラリの下端に位置するワイヤの部分)に
折曲くせがつき、くせづけに無理がなくワイヤ立ち上り
基部に皺や亀裂などの損傷が生じにくく、また折曲くせ
つけのための所要時間を従来のものよりも短縮すること
ができる。
According to the present invention, after the completion of the first bonding, the capillary is moved up in a direction opposite to the second bonding point in a substantially parabolic curved path, that is, in a curved path having no straight path, the wire is raised. Since the part (the part that rises almost vertically on the first bonding point when forming the loop) is extended, the force is not concentrated at one point and is dispersed so that no excessive force is applied to the wire and the upper end part of the wire rising part (capillary The part of the wire located at the lower end of the wire has a bend, and there is no difficulty in squeezing, and wrinkles, cracks, and other damage do not occur easily at the base of the wire that rises up. Can be shorter than.

また、本発明はさらに上昇点まで移動して所定量のワイ
ヤを繰り出しているキャピラリを前記上昇点と第2ボン
ディング点とを結ぶ曲線軌道即ち直線または垂直下降軌
道のない曲線軌道をもって第2ボンディング点へ移動さ
せて、第2ボンディングを行うので、キャピラリ先端の
近傍に発生するワイヤの垂れが軽減され、第2ボンディ
ング点の近傍に形成されるワイヤの平坦な領域が短くな
る。これは第7図に示したように実測0.35〜0.4mmの平
坦領域を生じたときと同じ条件でキャピラリの軌跡を変
えて実験したときに第3図のように0.1〜0.2mmの平坦領
域しか生じなかったことから確認された。従って、ボン
ディング不良となるループの垂れや曲がりが軽減される
しワイヤの高さや形状を安定させることができる。
Further, according to the present invention, the capillary which moves further to the ascending point and pays out a predetermined amount of wire has a curved trajectory connecting the ascending point and the second bonding point, that is, a straight trajectory or a curved trajectory without a vertically descending trajectory. Since the second bonding is performed by moving the wire to, the sagging of the wire generated near the tip of the capillary is reduced, and the flat area of the wire formed near the second bonding point is shortened. This is because when the experiment was performed by changing the trajectory of the capillary under the same conditions as when a flat area of 0.35 to 0.4 mm was actually measured as shown in Fig. 7, only a flat area of 0.1 to 0.2 mm was obtained as shown in Fig. 3. It was confirmed because it did not occur. Therefore, loop sagging and bending, which cause defective bonding, are reduced, and the height and shape of the wire can be stabilized.

〔実施例〕〔Example〕

本発明の実施例を第1〜3図を用いて説明する。 An embodiment of the present invention will be described with reference to FIGS.

第1図はキャピラリ8の移動軌跡を示している。この例
では折曲くせつけのための前半部移動を略放物線状の曲
線軌道として第1ボンディング点上のワイヤ立ち上がり
基部の一点に力が集中してしまう水平軌道或いは破線で
示すような直線軌道をとらずに、キャピラリ8に上昇動
と第2ボンディング点3と反対の方向への水平方向移動
とを併合した曲線軌道で移動させ、ワイヤ1に無理な力
が加わらない軌跡でワイヤ立ち上り部を繰り出す。な
お、この第1図に示した軌跡で折曲くせをつけると、第
4図の従来例の折曲くせつけに要した時間よりも15ms程
度短い時間しかかからなかった。
FIG. 1 shows the movement trajectory of the capillary 8. In this example, the first half movement for bending and bending is set as a substantially parabolic curved trajectory, and a horizontal trajectory or a linear trajectory shown by a broken line in which the force is concentrated at one point of the wire rising base on the first bonding point. Instead, the capillary 8 is moved along a curved orbit that combines the upward movement and the horizontal movement in the direction opposite to the second bonding point 3, and the wire rising portion is fed out along a locus where no excessive force is applied to the wire 1. . It should be noted that it took about 15 ms shorter than the time required for the bend-bending of the conventional example shown in FIG. 4 when the bend-bending was made along the locus shown in FIG.

またキャピラリ8の上昇点から第2ボンディング点3ま
での移動は、上昇点から第2ボンディング点3を結ぶ略
放物線状の曲線軌道としてあり、破線で示すように直線
軌道は避けて、かつ垂直下降軌道を用いないことが肝要
と実験の結果判断される。垂直下降軌道を用いなければ
キャピラリ8が第2ボンディング点3に接近した第2図
の状態で従来の第6図に示したような大きなワイヤの垂
れ9は発生せず、キャピラリ8が第2ボンディング点3
に到達した第3図の状態での平坦領域も実測0.1〜0.2mm
であってワイヤの高さや形状を安定させることができ
た。
Further, the movement from the ascending point of the capillary 8 to the second bonding point 3 is a substantially parabolic curved path connecting the ascending point and the second bonding point 3, avoiding a straight path as shown by the broken line, and descending vertically. As a result of experiments, it is important to avoid using orbits. If the vertical descending orbit is not used, the large wire sag 9 as shown in FIG. 6 of the related art does not occur in the state of the capillary 8 approaching the second bonding point 3 as shown in FIG. Point 3
The flat area in the state of FIG.
Therefore, the height and shape of the wire could be stabilized.

このようにしてキャピラリ8を移動させて第2ボンディ
ングを行うと、繰り出されたワイヤ1は折曲くせをつけ
たループ形状の頂部4で確実に曲がって第1図に2点鎖
線で示したような的確なループ形状に賦形されて第1ボ
ンディング点2と第2ボンディング点3との間に架け渡
される。
When the capillary 8 is moved in this way and the second bonding is performed, the wire 1 that has been fed out is surely bent at the loop-shaped top portion 4 having a bend, as shown by the two-dot chain line in FIG. It is formed into a proper loop shape and bridged between the first bonding point 2 and the second bonding point 3.

〔発明の効果〕〔The invention's effect〕

本発明は、第1ボンディング終了後、キャピラリを上昇
させながら第2ボンディング点と反対の方向に略放物線
状の曲線軌道で移動させてワイヤ立ち上り部を繰り出
し、次いでキャピラリを所定の位置へ上昇させて所定量
のワイヤをさらに繰り出し、その後キャピラリを前記上
昇点と第2ボンディング点とを結ぶ直線または垂直降下
軌道のない曲線軌道をもって第2ボンディング点へ移動
させて第2ボンディングを行うので、ワイヤに無理な力
が集中して加わることがなく折曲くせづけができ、第1
ボンディング点に接続されたワイヤの立ち上り基部に発
生し易い皺や亀裂などの損傷を少なくすることができ、
また、ワイヤに折曲くせをつけるのに要する時間を従来
のものより短縮することができ、さらに第2ボンディン
グ点の近傍のワイヤの平坦な領域が従来では例えば0.35
〜0.4mm生じていたものを0.1〜0.2mm程度に軽減できる
ため、外部リードの幅が狭いリードフレームを用いた多
ピンの半導体デバイスのワイヤボンディングにおいて
も、ボンディング不良となるループの垂れや曲がりが発
生しないし、第1ボンディング点と第2ボンディング点
との間に接続されるワイヤの高さや形状を調整させ安定
することも容易で、ワイヤの細線化にも対応しやすくコ
スト削減に寄与できる。
According to the present invention, after the completion of the first bonding, the capillary is moved upward in a direction opposite to the second bonding point along a substantially parabolic curved trajectory to extend the wire rising portion, and then the capillary is moved to a predetermined position. Since a predetermined amount of wire is further unrolled and then the capillary is moved to the second bonding point with a straight line connecting the ascending point and the second bonding point or a curved track without a vertical descending track, the second bonding is performed. It is possible to bend and be forced without exerting excessive force.
It is possible to reduce damage such as wrinkles and cracks that tend to occur at the rising base of the wire connected to the bonding point,
Further, the time required to bend the wire can be shortened as compared with the conventional one, and the flat area of the wire in the vicinity of the second bonding point is conventionally 0.35 mm or less.
-0.4 mm can be reduced to about 0.1-0.2 mm.Therefore, even in wire bonding of a multi-pin semiconductor device using a lead frame with a narrow width of external leads, there is no loop sag or bending that causes bonding failure. It does not occur, and it is easy to adjust and stabilize the height and shape of the wire connected between the first bonding point and the second bonding point, and it is possible to easily cope with thinning of the wire and contribute to cost reduction.

【図面の簡単な説明】[Brief description of drawings]

第1〜3図は本発明方法の実施例を示し、第1図はキャ
ピラリの軌跡を示す説明図、第2図はキャピラリ8が第
2ボンディング点3に接近したときのワイヤ1の状態を
示す説明図、第3図はキャピラリ8が第2ボンディング
点3に到達したときのワイヤ1の状態を示す説明図であ
る。 第4〜7図は従来方法を示し、第4図はキャピラリの軌
跡を示す説明図、第5図は立ち上り基部5の損傷を示す
説明図、第6図はキャピラリ8が第2ボンディング点3
の直上部まで下降したときの(キャピラリ8の高さは第
2図と同じにしてある)ワイヤの垂れ9を示す説明図、
第7図はキャピラリ8が第2ボンディング点3に到達し
たときのワイヤ1の状態を示す説明図である。 1…ワイヤ、2…第1ボンディング点、3…第2ボンデ
ィング点、4…ループ形状の頂部、5…ワイヤ立ち上り
基部、6…皺、7…亀裂、8…キャピラリ、9…ワイヤ
の垂れ。
1 to 3 show an embodiment of the method of the present invention, FIG. 1 is an explanatory view showing the trajectory of the capillary, and FIG. 2 shows the state of the wire 1 when the capillary 8 approaches the second bonding point 3. FIG. 3 and FIG. 3 are explanatory views showing the state of the wire 1 when the capillary 8 reaches the second bonding point 3. 4 to 7 show the conventional method, FIG. 4 is an explanatory view showing the trajectory of the capillary, FIG. 5 is an explanatory view showing damage to the rising base portion 5, and FIG. 6 is a capillary 8 with the second bonding point 3
Explanatory drawing showing the sagging 9 of the wire (when the height of the capillary 8 is the same as in FIG. 2) when it descends to just above
FIG. 7 is an explanatory view showing the state of the wire 1 when the capillary 8 reaches the second bonding point 3. 1 ... Wire, 2 ... 1st bonding point, 3 ... 2nd bonding point, 4 ... Loop-shaped top part, 5 ... Wire rising base part, 6 ... Wrinkle, 7 ... Crack, 8 ... Capillary, 9 ... Wire sag.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】第1ボンディング点と第2ボンディング点
との間をワイヤで接続するワイヤボンディング方法にお
いて、第1ボンディング終了後、キャピラリを上昇させ
ながら第2ボンディング点と反対の方向に略放物線状の
曲線軌道で移動させてワイヤ立ち上り部を繰り出し、次
いでキャピラリを所定の位置へ上昇させて所定量のワイ
ヤをさらに繰り出し、その後キャピラリを前記上昇点と
第2ボンディング点とを結ぶ直線下降軌道のない曲線軌
道をもって第2ボンディング点へ移動させて、第2ボン
ディングを行うことを特徴とするワイヤボンディング方
法。
1. A wire bonding method for connecting a first bonding point and a second bonding point with a wire, wherein after the completion of the first bonding, the capillary is raised and the shape is substantially parabolic in a direction opposite to the second bonding point. The wire rising portion is extended by moving along the curved orbit, then the capillary is raised to a predetermined position and a predetermined amount of wire is further extended, and then the capillary is not provided with a straight downward trajectory connecting the rising point and the second bonding point. A wire bonding method, wherein the second bonding is carried out by moving to a second bonding point with a curved track.
JP13127689A 1989-05-26 1989-05-26 Wire bonding method Expired - Lifetime JPH0695539B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13127689A JPH0695539B2 (en) 1989-05-26 1989-05-26 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13127689A JPH0695539B2 (en) 1989-05-26 1989-05-26 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH02310937A JPH02310937A (en) 1990-12-26
JPH0695539B2 true JPH0695539B2 (en) 1994-11-24

Family

ID=15054153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13127689A Expired - Lifetime JPH0695539B2 (en) 1989-05-26 1989-05-26 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0695539B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586679B2 (en) * 1990-03-14 1997-03-05 松下電器産業株式会社 Wire bonding method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738398B2 (en) * 1986-06-26 1995-04-26 株式会社東芝 Wire bonding method
JPS6342135A (en) * 1986-08-08 1988-02-23 Shinkawa Ltd Wire bonding method
JPS63257236A (en) * 1987-04-14 1988-10-25 Mitsubishi Electric Corp Wire bonding

Also Published As

Publication number Publication date
JPH02310937A (en) 1990-12-26

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