JPH0697632B2 - Resistance heating element - Google Patents
Resistance heating elementInfo
- Publication number
- JPH0697632B2 JPH0697632B2 JP61007837A JP783786A JPH0697632B2 JP H0697632 B2 JPH0697632 B2 JP H0697632B2 JP 61007837 A JP61007837 A JP 61007837A JP 783786 A JP783786 A JP 783786A JP H0697632 B2 JPH0697632 B2 JP H0697632B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- heating element
- heat
- resistance heating
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 title claims description 33
- 239000010408 film Substances 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910008423 Si—B Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Non-Adjustable Resistors (AREA)
- Electronic Switches (AREA)
- Surface Heating Bodies (AREA)
Description
【発明の詳細な説明】 〔技術分野〕 本発明は抵抗発熱体、特にサーマルヘツド用抵抗発熱体
に関する。Description: TECHNICAL FIELD The present invention relates to a resistance heating element, and more particularly to a resistance heating element for a thermal head.
サーマルヘツドはコンピユータ、ワードプロセツサ、フ
アクシミリ等における印加ヘツドとして広く用いられて
おり、その発熱要素は抵抗発熱体である。抵抗発熱体と
してはTa2N、Cr−Si−Ｏ、Ta−Si、Ta−SiCなどが知ら
れているが、これらは比抵抗が小さく、耐熱性が十分で
ないなどの欠点を有する。サーマルヘッドの抵抗発熱体
は1msec以下のような短時間のうちに大きいエネルギー
が投入されるだけでなく、長期間にわたつてこのような
熱パルスが繰返して印加されるから、長期にわたつて抵
抗が変化しないことが重要である。従来の抵抗発熱体は
このような要求に十分応えることができなかつた。ま
た、抵抗発熱体はプリンタの印字速度によつて抵抗を適
切に選択する必要があるが、抵抗の大きさは比抵抗及び
膜厚に依存する。しかし膜厚は薄過ぎると抵抗が大きく
なり且つ膜厚が不均一になり、厚過ぎると熱容量が大き
くなつて印字の遅れを生じるなどの問題を有するので成
る範囲に限定されてしまう。従つて厚さ100〜4000Åの
膜厚のものを用い、シート抵抗500〜1000Ω／□程度の
比較的高抵抗として、短時間、高エネルギーの熱パルス
を投入し高速化をはかる。このような苛酷な条件下では
耐熱性と長寿命を有する抵抗材が必要となる。The thermal head is widely used as an application head in a computer, a word processor, a facsimile, etc., and its heating element is a resistance heating element. Ta 2 N, Cr-Si-O, Ta-Si, Ta-SiC and the like are known as resistance heating elements, but they have drawbacks such as low specific resistance and insufficient heat resistance. The resistance heating element of the thermal head not only inputs a large amount of energy in a short time, such as 1 msec or less, but also repeatedly applies such a heat pulse over a long period of time, so the resistance over a long period of time It is important that does not change. The conventional resistance heating element has not been able to sufficiently meet such requirements. Further, the resistance heating element is required to select the resistance appropriately according to the printing speed of the printer, but the magnitude of the resistance depends on the specific resistance and the film thickness. However, if the film thickness is too thin, the resistance becomes large and the film thickness becomes non-uniform, and if it is too thick, there is a problem that the heat capacity becomes large and the printing is delayed, so that the range is limited. Therefore, use a film with a thickness of 100 to 4000Å and make the sheet resistance relatively high with a sheet resistance of 500 to 1000 Ω / □, and apply a high energy heat pulse for a short time to increase the speed. Under such severe conditions, a resistance material having heat resistance and long life is required.
また、抵抗温度係数TCRは小さい程良いわけではなく、
使用条件や用途によつて負のまたは正の大きい値が必要
となることがあり、TCRが任意に設定しうることが望ま
しい。Also, the smaller the temperature coefficient of resistance TCR, the better,
A large negative or positive value may be required depending on the usage conditions and application, and it is desirable that the TCR can be set arbitrarily.
本発明の目的は、耐熱性が高く、繰返し熱パルスによつ
ても長期に劣化せず、また抵抗温度係数の調整が可能な
抵抗発熱体、特にサーマルヘツド用発熱体を提供するこ
とにある。本発明はまた高速プリントに適するサーマル
ヘツド用発熱体を提供することを目的とする。It is an object of the present invention to provide a resistance heating element, particularly a heating element for a thermal head, which has high heat resistance, is not deteriorated for a long time by repeated heat pulses, and has a resistance temperature coefficient adjustable. It is another object of the present invention to provide a heating element for a thermal head suitable for high speed printing.
本発明の抵抗発熱体は、Si1-xBx（ただしｘは0.01〜0.
7）より成る抵抗発熱体によつて達成される。The resistance heating element of the present invention is Si 1-x Bx (where x is 0.01 to 0.
This is achieved by a resistance heating element consisting of 7).
本発明の発熱体は、耐熱性が高く、繰返し通電による熱
パルスによつても抵抗値が長期に変化しない。さらに、
本発明によると、抵抗体の組成を変えることによつて温
度係数TCRを広範囲に変えることができる。The heating element of the present invention has high heat resistance, and its resistance value does not change for a long period of time even by heat pulses generated by repeated energization. further,
According to the present invention, the temperature coefficient TCR can be changed over a wide range by changing the composition of the resistor.
第１図はサーマルヘツドの発熱部の概要を示し、下から
順にアルミナ等の基板１、蓄熱用のグレーズガラス層
２、抵抗発熱体層３、Ni−Cr、Au等の電極４、５及びSi
O2、BP等の耐摩耗性保護膜６より成る。図の７は発熱部
となる。電極４、５間に電圧を加えると、電流は抵抗発
熱体層３に流れて発熱させ、この熱は保護膜６を通して
その表面に圧接された感熱色材リボンを加熱し、さらに
その表面に圧接された用紙に色材を転写する。抵抗発熱
体３は本発明に従つてシリコンSiと、ホウ素Ｂの化合物
より成る薄膜である。以下にこれを詳しく述べる。FIG. 1 shows an outline of a heat generating part of a thermal head, and a substrate 1 made of alumina, a glaze glass layer 2 for heat storage, a resistance heating element layer 3, electrodes 4 and 5 made of Ni-Cr, Au, etc. and Si in order from the bottom.
It is composed of a wear resistant protective film 6 such as O 2 and BP. Reference numeral 7 in the figure is a heat generating portion. When a voltage is applied between the electrodes 4 and 5, a current flows through the resistance heating element layer 3 to generate heat, and this heat heats the heat-sensitive coloring material ribbon pressed against its surface through the protective film 6, and further pressed against the surface. Transfer the coloring material to the printed paper. The resistance heating element 3 is a thin film made of a compound of silicon Si and boron B according to the present invention. This will be described in detail below.
本発明の抵抗発熱体は、Si1-xBx（ｘは0.01〜0.7）より
成る発熱体である。この発熱体はホウ素成分の含有量を
制御することにより抵抗温度係数、抵抗及び耐熱性を制
御することができる。ホウ素量ｘが0.01以上に増えると
抵抗値が大きくなり、膜厚100〜4000Å、好ましくは100
〜1000Åでシート抵抗500〜1000Ω／□を容易に達成す
ることができる。また、ホウ素量が増大すると耐熱性
や、繰返し熱パルスに対する安定性が増大する。さら
に、温度係数はホウ素量ｘが0.01から増大すると約−30
0ppm/℃から正に転じ、ｘが約0.7で約300ppm/℃となつ
てほぼ飽和する。従つて、温度係数は組成をこの範囲で
調整することにより広範囲に調整することができる。The resistance heating element of the present invention is a heating element made of Si 1-x Bx (x is 0.01 to 0.7). This heating element can control the temperature coefficient of resistance, resistance and heat resistance by controlling the content of the boron component. When the amount of boron x increases to 0.01 or more, the resistance value increases, and the film thickness is 100 to 4000Å, preferably 100.
A sheet resistance of 500 to 1000Ω / □ can be easily achieved with a value of up to 1000Å. Further, as the amount of boron increases, the heat resistance and the stability against repeated heat pulses increase. Furthermore, the temperature coefficient is about -30 when the boron content x increases from 0.01.
It turns from 0 ppm / ° C to positive, and when x is about 0.7, it reaches about 300 ppm / ° C and is almost saturated. Therefore, the temperature coefficient can be adjusted over a wide range by adjusting the composition within this range.
本発明の抵抗発熱体はプラズマCVD法で製造できる。Si
ソースガスとしては例えばSiH4、Siソースガスとしては
BCl3を用い、またキヤリアガスとしてはH2を用いること
ができる。これらのガスの比率及び電力、圧力、時間、
反応温度等を調整することにより、生成されるSi−Ｂ抵
抗膜の組成及び厚さを調整することができる。得られる
膜はシート抵抗にして約500〜1000Ω／□程度である。
この抵抗値は膜厚や組成の制御により得られるものであ
るが、膜厚は通常100〜4000Å、好ましくは100〜1000Å
の範囲にする。The resistance heating element of the present invention can be manufactured by the plasma CVD method. Si
As the source gas, for example, SiH 4 , and as the Si source gas,
BCl 3 can be used, and H 2 can be used as the carrier gas. The ratio and power of these gases, pressure, time,
By adjusting the reaction temperature and the like, it is possible to adjust the composition and thickness of the produced Si-B resistance film. The film obtained has a sheet resistance of about 500 to 1000 Ω / □.
This resistance value is obtained by controlling the film thickness and composition, but the film thickness is usually 100 to 4000Å, preferably 100 to 1000Å
To the range of.
以下に、本発明の実施例を説明する。Examples of the present invention will be described below.
実施例 Si−Ｂ膜をプラズマCVD法により下記条件下に成膜し
た。膜の組成はガスの比率、電力、及び圧力を調整する
ことにより調整した。Example A Si-B film was formed by the plasma CVD method under the following conditions. The composition of the film was adjusted by adjusting the gas ratio, power, and pressure.
20％SiH4／H2 500SCCM BCl3 １〜100SCCM 電力 100〜400W 反応温度 400℃ 電極寸法 100×300mm2 圧力 0.1〜1.5Torr 得られた抵抗発熱体Si−Ｂ膜の温度係数TCRを測定した
ところ、第２図の結果を得た。第２図にはホウ素Ｂの含
有百分率（原子比）を横軸に取つたが、式Si1-xBxで表
わせば、この百分率はｘ×100に相当する。またシート
抵抗は約500Ω／□にそろえた。20% SiH 4 / H 2 500SCCM BCl 3 1-100SCCM Power 100-400W Reaction temperature 400 ℃ Electrode size 100 × 300mm 2 Pressure 0.1-1.5Torr Temperature coefficient TCR of the obtained resistance heating element Si-B film was measured. The results shown in FIG. 2 were obtained. In FIG. 2, the content percentage (atomic ratio) of boron B is plotted on the abscissa, and when expressed by the formula Si 1-x Bx, this percentage corresponds to x × 100. The sheet resistance is about 500Ω / □.
また、SiB0.05に熱を加えて抵抗変化を測定したとこ
ろ、第３図に示す結果を得た。なお、従来のTa−Si及び
Ta−SiCの耐熱テストのデータを併記した。When the resistance change was measured by applying heat to SiB 0.05 , the results shown in FIG. 3 were obtained. In addition, conventional Ta-Si and
The data of the heat resistance test of Ta-SiC is also shown.
さらに、シート抵抗約500Ω／□のSiB0.05を抵抗発熱体
とする第１図のような構造のサーマルヘツドを作成し、
ステツプストレステストを実施した。これは発熱体に実
際にパルス通電して発熱させるテストであり、パルス幅
3.0m秒、1.5m秒及び1.0m秒の熱パルスを108回印加した
ときの抵抗変化を、次第に増大する各投入電力に対して
測定して第４図の結果を得た。Further, a thermal head having a structure as shown in FIG. 1 is prepared, which uses SiB 0.05 having a sheet resistance of about 500Ω / □ as a resistance heating element,
A step stress test was conducted. This is a test in which a heating element is actually pulsed to generate heat.
The change in resistance when heat pulses of 3.0 msec, 1.5 msec and 1.0 msec were applied 10 8 times was measured for each gradually increasing input power, and the results of FIG. 4 were obtained.
温度係数TCR（ppm/℃）とホウ素量の関係を示す第２図
によると、ホウ素Ｂの含有量が増大すると温度係数は約
−300ppm/℃から上昇し、数％のホウ素量で正に転じ、
ホウ素量の増加に比例して大きくなり、約70％で＋300p
pm/℃程度になり、やがて飽和へ向かう。従つて、Ｂの
含有率を調整すれば、温度係数は相当に広い範囲で調整
することができることが分る。According to Fig. 2 showing the relationship between the temperature coefficient TCR (ppm / ° C) and the amount of boron, the temperature coefficient rises from about -300ppm / ° C as the content of boron B increases, and turns positive when the amount of boron is several%. ,
It increases in proportion to the increase in the amount of boron, and it is + 300p at about 70%.
It reaches about pm / ° C and eventually approaches saturation. Therefore, it can be seen that the temperature coefficient can be adjusted in a considerably wide range by adjusting the B content.
次に、耐熱性を示す第３図によると、本発明のSi1-xBx
は従来の発熱体よりもはるかに抵抗値の変化が小さく、
すぐれた耐熱性を有することが分る。Next, according to FIG. 3 showing heat resistance, Si 1-x Bx of the present invention
Has a much smaller change in resistance than conventional heating elements,
It can be seen that it has excellent heat resistance.
同様に、実用テストに相当するステツプストレステスト
を示す第４図によると、本発明のSi1-xBxは表面ピーク
温度500℃で１％以下、3.0m秒の熱パルス印加600℃で５
％以下、1.0m秒の熱パルス印加800℃で５％以下の抵抗
変化を示し、極めて耐熱性が高い発熱体であることが分
る。Similarly, according to FIG. 4 showing a step stress test corresponding to a practical test, Si 1-x Bx of the present invention has a surface peak temperature of less than 1% at a temperature of 500 ° C. and a heat pulse of 3.0 msec at 5 ° C. of 5%.
%, A resistance change of 5% or less at 800 ° C. when a heat pulse of 1.0 msec is applied, showing that the heating element has extremely high heat resistance.
以上のように、本発明の抵抗発熱体は耐熱性にすぐれ、
温度係数が広い範囲の１つに任意に設定でき、また高速
印字に対応できることが分る。As described above, the resistance heating element of the present invention has excellent heat resistance,
It can be seen that the temperature coefficient can be arbitrarily set to one of a wide range, and high-speed printing can be supported.
第１図はサーマルヘツドの発熱素子の構成を示す断面
図、第２図は抵抗温度係数と本発明の発熱体組成の関係
を示すグラフ、第３図は本発明の発熱体の耐熱性を示す
グラフ、及び第４図は本発明の発熱体のステツプストレ
ス耐熱テストを示すグラフである。FIG. 1 is a sectional view showing the structure of a heating element of a thermal head, FIG. 2 is a graph showing the relationship between the temperature coefficient of resistance and the composition of the heating element of the present invention, and FIG. 3 is the heat resistance of the heating element of the present invention. The graph and FIG. 4 are graphs showing the step stress heat resistance test of the heating element of the present invention.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｂ 3/20 ３０１ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H05B 3/20 301
Claims (1)
抵抗発熱体。1. A resistance heating element made of Si 1-x Bx (where x is 0.01 to 0.7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61007837A JPH0697632B2 (en) | 1986-01-20 | 1986-01-20 | Resistance heating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61007837A JPH0697632B2 (en) | 1986-01-20 | 1986-01-20 | Resistance heating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62168375A JPS62168375A (en) | 1987-07-24 |
| JPH0697632B2 true JPH0697632B2 (en) | 1994-11-30 |
Family
ID=11676719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61007837A Expired - Lifetime JPH0697632B2 (en) | 1986-01-20 | 1986-01-20 | Resistance heating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0697632B2 (en) |
-
1986
- 1986-01-20 JP JP61007837A patent/JPH0697632B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62168375A (en) | 1987-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |