JPH0699452B2 - Method for manufacturing FSi (OR) 3 - Google Patents
Method for manufacturing FSi (OR) 3Info
- Publication number
- JPH0699452B2 JPH0699452B2 JP3140473A JP14047391A JPH0699452B2 JP H0699452 B2 JPH0699452 B2 JP H0699452B2 JP 3140473 A JP3140473 A JP 3140473A JP 14047391 A JP14047391 A JP 14047391A JP H0699452 B2 JPH0699452 B2 JP H0699452B2
- Authority
- JP
- Japan
- Prior art keywords
- fsi
- reaction
- hydrogen fluoride
- trialkoxyfluorosilane
- product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 4
- 238000006243 chemical reaction Methods 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 4
- 150000001463 antimony compounds Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 231100000614 poison Toxicity 0.000 description 3
- 230000007096 poisonous effect Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Description
【０００１】[0001]
【産業上の利用分野】本発明は、トリアルコキシフルオ
ロシランＦＳｉ（ＯＲ）3 の製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing trialkoxyfluorosilane FSi (OR) 3 .
【０００２】[0002]
【発明の背景】近年、半導体産業やセラミック産業等の
発展と伴に、その重要な原料としてのシリコン化合物の
需要の伸びは著しい。すなわち、シランＳｉＨ4 やテト
ラアルコキシシランＳｉ（ＯＲ）4 のような置換体部が
全て同じシリコン化合物は、従来より広く用いられて来
たが、例えばトリアルコキシフルオロシランのような化
合物の需要の増大も目を見張るものがある。BACKGROUND OF THE INVENTION In recent years, along with the development of the semiconductor industry, the ceramic industry, etc., the demand for silicon compounds as an important raw material thereof has been remarkably increased. That is, silicon compounds such as silane SiH 4 and tetraalkoxysilane Si (OR) 4 having the same substituents have been widely used, but the demand for compounds such as trialkoxyfluorosilane has increased. There is something amazing.
【０００３】ところで、トリアルコキシフルオロシラン
以外のトリアルコキシハロシランＸＳｉ（ＯＲ）3 ( Ｘ
は塩素、臭素、ヨウ素）の製造では、Ｓｉ（ＯＲ）4 と
ＨＸ（Ｘは塩素、臭素、ヨウ素）との反応が考えられた
ものの、この反応では、Ｘ3 Ｓｉ（ＯＲ）、Ｘ2 Ｓｉ
（ＯＲ）2 、ＸＳｉ（ＯＲ）3 、Ｓｉ（ＯＲ）4 といっ
た複数種の生成物が出来、しかもこれらの化合物の沸点
は近い為に高純度品は得られないのが現実であった。こ
の為、本発明が対象としたＦＳｉ（ＯＲ）3 の製造にあ
っても同様と推察され、Ｓｉ（ＯＲ）4 とＨＦとの反応
は一顧だにされなかった。Incidentally, trialkoxyhalosilanes other than trialkoxyfluorosilane XSi (OR) 3 (X
In the production of chlorine, bromine, iodine), a reaction between Si (OR) 4 and HX (X is chlorine, bromine, iodine) was considered, but in this reaction, X 3 Si (OR), X 2 Si
In reality, a plurality of types of products such as (OR) 2 , XSi (OR) 3 and Si (OR) 4 can be produced, and since these compounds have close boiling points, it is impossible to obtain a highly pure product. Therefore, it is assumed that the same is true in the production of FSi (OR) 3 targeted by the present invention, and the reaction between Si (OR) 4 and HF was not considered.
【０００４】すなわち、ＦＳｉ（ＯＲ）3 の製造方法と
しては、 Ｓｉ（ＯＣ2 Ｈ5 ）4 ＋ＳｂＦ3 ＋ＳｂＣｌ3 →ＦＳｉ（ＯＣ2 Ｈ5 ）3 ＋ Ｆ2 Ｓｉ（ＯＣ2 Ｈ5 ）2 Ｓｉ（ＯＣ2 Ｈ5 ）Ｃｌ3 ＋ＳｂＦ3 →Ｆ3 Ｓｉ（ＯＣ2 Ｈ5 ）→ Ｆ2 Ｓｉ（ＯＣ2 Ｈ5 ）2 →ＦＳｉ（ＯＣ2 Ｈ5 ）3 Ｓｉ（ＯＣ2 Ｈ5 ）4 ＋（Ｃ6 Ｈ5 ）ＣＨ3 Ｓｉ（ＯＣ2 Ｈ5 ）Ｆ＋ＡｌＣｌ3 →ＦＳｉ（ＯＣ2 Ｈ5 ）3 ＋Ｆ2 Ｓｉ（ＯＣ2 Ｈ5 ）2 ＋ Ｓｉ（ＯＣ2 Ｈ5 ）4 ＋（Ｃ6 Ｈ5 ）ＣＨ3 Ｓｉ（ＯＣ2 Ｈ5 ）2 のようなアンチモン化合物やアルミニウム化合物を用い
る方法（Ｊ．Ａｍ．Ｃｈｅｍ．Ｓｏｃ．，６８，７６
（１９４６）、Ｎａｔｕｒｅ，１５８，６７２（１９４
６）、Ｕ．Ｓ．Ｐａｔ．３，３７４，２４７）とか、 Ｓｉ（ＯＣ2 Ｈ5 ）4 ＋（Ｃ6 Ｈ5 ）ＣＨ3 ＳｉＦ2 →ＦＳｉ（ＯＣ2 Ｈ5 ）3 ＋Ｆ2 Ｓｉ（ＯＣ2 Ｈ5 ）2 ＋（Ｃ6 Ｈ5 ）ＣＨ3 Ｓｉ（ＯＣ2 Ｈ5 ）Ｆ ＋Ｓｉ（ＯＣ2 Ｈ5 ）4 のような複雑な有機シリコン化合物を出発原料として用
いる方法が提案されているにすぎない。That is, as a method for producing FSi (OR) 3 , Si (OC 2 H 5 ) 4 + SbF 3 + SbCl 3 → FSi (OC 2 H 5 ) 3 + F 2 Si (OC 2 H 5 ) 2 Si ( OC 2 H 5 ) Cl 3 + SbF 3 → F 3 Si (OC 2 H 5 ) → F 2 Si (OC 2 H 5 ) 2 → FSi (OC 2 H 5 ) 3 Si (OC 2 H 5 ) 4 + (C 6 H 5 ) CH 3 Si (OC 2 H 5 ) F + AlCl 3 → FSi (OC 2 H 5 ) 3 + F 2 Si (OC 2 H 5 ) 2 + Si (OC 2 H 5 ) 4 + (C 6 H 5 ). A method using an antimony compound such as CH 3 Si (OC 2 H 5 ) 2 or an aluminum compound (J. Am. Chem. Soc., 68, 76).
(1946), Nature, 158, 672 (194
6), U. S. Pat. 3,374,247) or Si (OC 2 H 5 ) 4 + (C 6 H 5 ) CH 3 SiF 2 → FSi (OC 2 H 5 ) 3 + F 2 Si (OC 2 H 5 ) 2 + (C 6 Only a method using a complicated organic silicon compound such as H 5 ) CH 3 Si (OC 2 H 5 ) F + Si (OC 2 H 5 ) 4 as a starting material has been proposed.
【０００５】しかしながら、上記の反応による製造方法
では、原料のアンチモンやアルミニウムが金属不純物と
して製品に混入してくる可能性があり、しかもアンチモ
ン化合物は劇毒物であるから取り扱いが面倒であり、工
場生産方式に適用しようとすると環境保全の問題も加わ
る。又、（Ｃ6 Ｈ5 ）ＣＨ3 ＳｉＦ2 や（Ｃ6 Ｈ5 ）Ｃ
Ｈ3 Ｓｉ（ＯＣ2 Ｈ5 ）Ｆのような複雑な有機シリコン
化合物は、高価で、かつ、入手も困難であり、工場生産
方式には向いていない。However, in the production method by the above reaction, there is a possibility that the raw material antimony or aluminum may be mixed into the product as metal impurities, and the antimony compound is a poisonous substance, so that it is troublesome to handle and is produced at the factory. When it is applied to the method, the problem of environmental protection is added. Also, (C 6 H 5 ) CH 3 SiF 2 and (C 6 H 5 ) C
Complex organic silicon compounds such as H 3 Si (OC 2 H 5 ) F are expensive and difficult to obtain, and are not suitable for factory production methods.
【０００６】[0006]
【発明の開示】本発明の目的は、高純度なＦＳｉ（Ｏ
Ｒ）3 を簡単、かつ、低廉に得ることである。この本発
明の目的は、Ｓｉ（ＯＲ）4 とＨＦとを反応させること
を特徴とするＦＳｉ（ＯＲ）3 の製造方法によって達成
される。DISCLOSURE OF THE INVENTION An object of the present invention is to provide high purity FSi (O 2
R) 3 is to be obtained easily and at low cost. This object of the present invention is achieved by a method for producing FSi (OR) 3 characterized by reacting Si (OR) 4 with HF.
【０００７】又、Ｓｉ（ＯＲ）4 とＨＦとを反応させた
後、生成物を遅滞なく分離精製することを特徴とするＦ
Ｓｉ（ＯＲ）3 の製造方法によって達成される。尚、ト
リアルコキシフルオロシランＦＳｉ（ＯＲ）3における
Ｒとしては、メチル基、エチル基、プロピル基、ブチル
基、ペンチル基、Ｃ12Ｈ25、Ｃ14Ｈ29、Ｃ16Ｈ33といっ
たアルキル基、フェニル基、メチル基やエチル基といっ
たアルキル基などで置換されたフェニル基などが挙げら
れる。In addition, after reacting Si (OR) 4 and HF, the product is separated and purified without delay F
This is achieved by the manufacturing method of Si (OR) 3 . As R in trialkoxyfluorosilane FSi (OR) 3 , there are methyl group, ethyl group, propyl group, butyl group, pentyl group, alkyl groups such as C 12 H 25 , C 14 H 29 and C 16 H 33 , and phenyl. And a phenyl group substituted with an alkyl group such as a methyl group or an ethyl group.
【０００８】そして、本発明によれば、アンチモン化合
物のような劇毒物を用いる必要がなく、取り扱いが容易
で、しかも原料コストが高く付かず、大量生産方式に適
ったものであり、さらには金属不純物の混入といったこ
とがなく、例えば純度９９．９９％以上といった高純度
なトリアルコキシフルオロシランＦＳｉ（ＯＲ）3 を簡
単、かつ、低廉に得ることが出来るのである。According to the present invention, it is not necessary to use a poisonous substance such as an antimony compound, it is easy to handle, the raw material cost is not high, and it is suitable for a mass production method. High-purity trialkoxyfluorosilane FSi (OR) 3 having a purity of 99.99% or more can be easily obtained at low cost without inclusion of impurities.
【０００９】以下、本発明についてさらに詳しく説明す
る。本発明は、 テトラアルコキシシランとフッ化水素を出発原料と
すること、 テトラアルコキシシランとフッ化水素との反応は、
温度及びフッ化水素の流量制御といった極めて簡単なも
ので済むこと、 副生成物の二フッ化物Ｆ2 Ｓｉ（ＯＲ）2 は、不安
定であって、速やかに三フッ化物と一フッ化物になるこ
と、 副生成物の三フッ化物Ｆ3 ＳｉＯＲは沸点が低く、
分離・精製は簡単 という化学的・物理的性質を上手く利用したことに基づ
くものである。The present invention will be described in more detail below. The present invention uses tetraalkoxysilane and hydrogen fluoride as starting materials, and the reaction between tetraalkoxysilane and hydrogen fluoride is
Very simple control of temperature and flow rate of hydrogen fluoride is required, and the by-product difluoride F 2 Si (OR) 2 is unstable and quickly becomes trifluoride and monofluoride. By-product trifluoride F 3 SiOR has a low boiling point,
Separation / purification is based on the successful use of its simple chemical and physical properties.
【００１０】すなわち、窒素気流下で反応容器中に入れ
られている１０モルのテトラアルコキシシランＳｉ（Ｏ
Ｒ）4 を激しく攪拌し、氷冷後、マスフローコントロー
ラで流量管理しながらＨＦを反応容器中に吹き込み、Ｈ
Ｆの供給量毎のトリアルコキシフルオロシランＦＳｉ
（ＯＲ）3 の収量、出発原料のＳｉ（ＯＲ）4 の消費
量、副生成物としてのアルコールの収量及び他の三フッ
化物、二フッ化物の生成の有無を調べたところ、Ｓｉ
（ＯＲ）4 １０モルとＨＦ１０モルとは全て消費され、
定量的にＦＳｉ（ＯＲ）3 が得られることが見出された
のである。又、反応終了後の未反応フッ化水素や副生成
物である三フッ化物は、反応容器を加温することによ
り、ＦＳｉ（ＯＲ）3 を損なうことなく、速やかに除去
でき、かつ、前記で得られた化合物を蒸留操作により精
製したところ、極めて高純度なトリアルコキシフルオロ
シランＦＳｉ（ＯＲ）3 が得られたのである。That is, 10 moles of tetraalkoxysilane Si (O) contained in a reaction vessel under a nitrogen stream.
R) 4 is vigorously stirred, cooled with ice, and then HF is blown into the reaction vessel while controlling the flow rate with a mass flow controller, and H
Trialkoxyfluorosilane FSi for each supply amount of F
When the yield of (OR) 3 , the consumption amount of Si (OR) 4 as a starting material, the yield of alcohol as a by-product, and the presence or absence of other trifluoride and difluoride formation were examined,
(OR) 4 10 moles and HF 10 moles are all consumed,
It was found that FSi (OR) 3 was obtained quantitatively. In addition, unreacted hydrogen fluoride after the reaction and trifluoride, which is a by-product, can be quickly removed by heating the reaction vessel without damaging FSi (OR) 3 , and When the obtained compound was purified by a distillation operation, extremely high-purity trialkoxyfluorosilane FSi (OR) 3 was obtained.
【００１１】以下、本発明について実施例を挙げて説明
する。The present invention will be described below with reference to examples.
【００１２】[0012]
【実施例】図１に示す如くの装置を用意する。そして、
反応容器１中にテトラエトキシシラン１０モルを加え、
−５℃まで冷却し、その後マスフローコントローラ２で
１５ｓｅｅｍの流量に管理しながらフッ化水素を吹き込
み、 Ｓｉ（ＯＣ2 Ｈ5 ）4 ＋ＨＦ→ＦＳｉ（ＯＣ2 Ｈ5 ）3 ＋Ｃ2 Ｈ5 ＯＨ の反応を行わせた。反応終了後、未反応物のフッ化物を
除去する為に、反応容器を加温した。EXAMPLE An apparatus as shown in FIG. 1 is prepared. And
10 mol of tetraethoxysilane was added to the reaction vessel 1,
After cooling to −5 ° C., hydrogen fluoride is blown into the mass flow controller 2 while controlling the flow rate to 15seem, and the reaction of Si (OC 2 H 5 ) 4 + HF → FSi (OC 2 H 5 ) 3 + C 2 H 5 OH is performed. Was done. After completion of the reaction, the reaction vessel was heated to remove the unreacted fluoride.
【００１３】尚、フッ化水素量約１モル（２０ｇ）供給
毎にサンプリングを行い、ガスクロマトグラフィーによ
り反応の進行状況を追跡したので、完全に消費するフッ
化水素１０モルまでの測定結果を図２に示す。これによ
れば、反応終了までのガスクロマトグラフィーによる原
料の消費量と副生成物の関係からフッ化水素と副生成物
が検出されることなく、トリエトキシフルオロシランと
エタノールのみで構成されていることが判明した。又、
熱分解反応が一部生じる為、フッ化水素の供給量を理論
値よりも多目に供給することが好ましかった。Since the amount of hydrogen fluoride was sampled for each supply of about 1 mol (20 g) and the progress of the reaction was traced by gas chromatography, the measurement results up to 10 mol of hydrogen fluoride which is completely consumed are shown in FIG. 2 shows. According to this, hydrogen fluoride and by-products are not detected from the relationship between the consumption of raw materials and by-products by gas chromatography until the end of the reaction, and it is composed only of triethoxyfluorosilane and ethanol. It has been found. or,
Since the thermal decomposition reaction partially occurs, it was preferable to supply hydrogen fluoride in a larger amount than the theoretical value.
【００１４】次に、得られたトリエトキシフルオロシラ
ンの精製を行った。すなわち、一般的精製蒸留装置を用
い、４００ｔｏｒｒの減圧下で、エタノールを除去した
後、減圧下２００ｔｏｒｒによりトリエトキシフルオロ
シランを留出させ、純度分析を行った。製品の収率は９
０％で、図２の示す結果と良く一致した。上記の製品に
ついて、金属不純物含有量をフレームゼーマン型原子吸
光装置を用いて測定した結果、各金属元素（Ｃｏ，Ｃ
ｒ，Ｃｕ，Ｆｅ，Ｎｉ，Ｍｎ，Ｚｎ，Ｐｂ，Ｎａ，Ｋ，
Ｃａ，Ｍｇ）共に検出限界以下（＜０．１ｐｐｍ）であ
り、高純度であることが判明した。Next, the obtained triethoxyfluorosilane was purified. That is, using a general purification distillation apparatus, ethanol was removed under reduced pressure of 400 torr, triethoxyfluorosilane was distilled off under reduced pressure of 200 torr, and purity analysis was performed. Product yield is 9
At 0%, it was in good agreement with the result shown in FIG. Regarding the above products, the content of metal impurities was measured by using a flame Zeeman type atomic absorption spectrometer, and as a result, each metal element (Co, C
r, Cu, Fe, Ni, Mn, Zn, Pb, Na, K,
Both Ca and Mg were below the detection limit (<0.1 ppm), and it was found to be highly pure.
【００１５】又、元素分析の結果はＣ７１．９％、Ｈ１
５．７％、Ｆ２０．１％、Ｓｉ２８．０％であり、トリ
エトキシフルオロシラン（ＦＳｉ（ＯＣ2 Ｈ5 ）3 ）の
理論値（Ｃ７２．０７％、Ｈ１６．２０％、Ｆ１９．０
０％、Ｓｉ２８．０９％）と良く一致していた。The result of elemental analysis is C71.9%, H1
5.7%, F20.1%, a Si28.0%, theoretical value of triethoxyfluorosilane (FSi (OC 2 H 5) 3) (C72.07%, H16.20%, F19.0
0%, Si 28.09%).
【００１６】[0016]
【効果】本発明によれば、アンチモン化合物のような劇
毒物を用いる必要がなく、取り扱いが容易で、しかも原
料コストが高く付かず、大量生産方式に適ったものであ
り、さらには触媒も必要とせず、そして金属不純物の混
入といったことがなく、例えば純度９９．９９％以上と
いった高純度なトリアルコキシフルオロシランＦＳｉ
（ＯＲ）3 を簡単、かつ、低廉に得ることが出来る。[Effect] According to the present invention, it is not necessary to use a poisonous substance such as an antimony compound, it is easy to handle, the raw material cost is not high, and it is suitable for a mass production system, and further, a catalyst is also required. And a high-purity trialkoxyfluorosilane FSi having a purity of 99.99% or more without mixing metal impurities.
(OR) 3 can be obtained easily and at low cost.
【図１】本発明のＦＳｉ（ＯＲ）3 の製造に用いられる
装置の概略図である。FIG. 1 is a schematic view of an apparatus used for manufacturing FSi (OR) 3 of the present invention.
【図２】フッ化水素の供給量とＦＳｉ（ＯＲ）3 との関
係を示すグラフである。FIG. 2 is a graph showing the relationship between the supply amount of hydrogen fluoride and FSi (OR) 3 .
１ 反応容器 ２ マスフローコントローラ 1 reaction vessel 2 mass flow controller
───────────────────────────────────────────────────── フロントページの続き (72)発明者 木曽 幸一 神奈川県愛甲郡愛川町中津字桜台4002番地 株式会社トリケミカル研究所内 (72)発明者 三尋木 勝洋 神奈川県愛甲郡愛川町中津字桜台4002番地 株式会社トリケミカル研究所内 (72)発明者 高松 勇吉 神奈川県愛甲郡愛川町中津字桜台4002番地 株式会社トリケミカル研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koichi Kiso 4002 Sakuradai, Nakatsu, Aikawa-cho, Aiko-gun, Kanagawa Prefecture Trichemical Laboratory Co., Ltd. (72) Inventor Katsuhiro Sanhiroki 4002 Nakadai, Nakatsu, Aikawa-cho, Aiko-gun, Kanagawa Address Trichemical Laboratory Co., Ltd. (72) Inventor Yukichi Takamatsu 4002 Sakuradai, Nakatsu, Aikawa-cho, Aiko-gun, Kanagawa Address Trichemical Laboratory Co., Ltd.
Claims (2)
とを特徴とするＦＳｉ（ＯＲ）3 の製造方法。1. A method for producing FSi (OR) 3 , which comprises reacting Si (OR) 4 with HF.
後、生成物を遅滞なく分離精製することを特徴とするＦ
Ｓｉ（ＯＲ）3 の製造方法。2. F (2) characterized in that after reacting Si (OR) 4 with HF, the product is separated and purified without delay.
A method for producing Si (OR) 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3140473A JPH0699452B2 (en) | 1991-06-12 | 1991-06-12 | Method for manufacturing FSi (OR) 3 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3140473A JPH0699452B2 (en) | 1991-06-12 | 1991-06-12 | Method for manufacturing FSi (OR) 3 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0586070A JPH0586070A (en) | 1993-04-06 |
| JPH0699452B2 true JPH0699452B2 (en) | 1994-12-07 |
Family
ID=15269422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3140473A Expired - Fee Related JPH0699452B2 (en) | 1991-06-12 | 1991-06-12 | Method for manufacturing FSi (OR) 3 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0699452B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468894A (en) * | 1994-03-22 | 1995-11-21 | Tri Chemical Laboratory Inc. | Method of manufacturing FSi(OR)3 |
-
1991
- 1991-06-12 JP JP3140473A patent/JPH0699452B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586070A (en) | 1993-04-06 |
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