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JPH07101169B2 - Optical extensometer - Google Patents
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JPH07101169B2 - Optical extensometer - Google Patents

Optical extensometer

Info

Publication number
JPH07101169B2
JPH07101169B2 JP2335543A JP33554390A JPH07101169B2 JP H07101169 B2 JPH07101169 B2 JP H07101169B2 JP 2335543 A JP2335543 A JP 2335543A JP 33554390 A JP33554390 A JP 33554390A JP H07101169 B2 JPH07101169 B2 JP H07101169B2
Authority
JP
Japan
Prior art keywords
position detector
pair
semiconductor position
extensometer
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2335543A
Other languages
Japanese (ja)
Other versions
JPH04204106A (en
Inventor
就生 柴田
洋一 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2335543A priority Critical patent/JPH07101169B2/en
Publication of JPH04204106A publication Critical patent/JPH04204106A/en
Publication of JPH07101169B2 publication Critical patent/JPH07101169B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
  • Closed-Circuit Television Systems (AREA)

Description

【発明の詳細な説明】 A.産業上の利用分野 本発明は、試験片の伸び量などを計測するための光学式
伸び計に関する。
The present invention relates to an optical extensometer for measuring the elongation amount of a test piece and the like.

B.従来の技術 第2図は、照明用光源21と、光電変換素子であるCCD22
と、結像光学系23とを備え、CCD22により試験片TPの標
線マークMKを検出する従来の光学式伸び計20を示す。こ
こで、CCD22における標線マークの結像位置を示す信号
は、制御回路31に入力され、制御回路31は、光学式カメ
ラ20をパルスモータ33により追跡制御する。すなわち、
上記結像位置がCCD22上で常時同一位置となるようモー
タ駆動回路32を介してパルスモータ33により光学式カメ
ラ20を駆動制御する。また制御回路31は、パルスモータ
33のパルス数に基づいて伸び量を演算し、表示駆動回路
34を介して表示部35に表示する。このようにカメラ20を
伸びに追動させるのは、試験片TPの変位量がCCD20の測
定範囲よりも大きいゴムなどの材料を試験する場合であ
る。金属材料のように弾性係数が高く変位量が小さい場
合、すなわちCCD20の測定範囲よりも変位量が小さい場
合には、カメラ20を変位に追動させる必要はない。
B. Prior Art FIG. 2 shows a light source 21 for illumination and a CCD 22 which is a photoelectric conversion element.
1 shows a conventional optical extensometer 20 that includes an imaging optical system 23 and that detects a mark mark MK of a test piece TP by a CCD 22. Here, a signal indicating the image forming position of the marked line mark on the CCD 22 is input to the control circuit 31, and the control circuit 31 controls the optical camera 20 by the pulse motor 33 for tracking control. That is,
The optical camera 20 is drive-controlled by the pulse motor 33 via the motor drive circuit 32 so that the image formation position is always the same position on the CCD 22. The control circuit 31 is a pulse motor.
The display drive circuit calculates the amount of expansion based on the number of 33 pulses.
It is displayed on the display unit 35 via 34. In this way, the camera 20 is made to follow the elongation when testing a material such as rubber in which the displacement amount of the test piece TP is larger than the measurement range of the CCD 20. When the elastic coefficient is high and the displacement is small like a metal material, that is, when the displacement is smaller than the measurement range of the CCD 20, the camera 20 does not need to follow the displacement.

C.発明が解決しようとする課題 しかしながら、従来のCCDを使用する光学式伸び計で
は、CCDの分解能が低いので、金属材料のように弾性係
数が高く変位量の小さい材料の変位測定精度が低く、実
質上測定できないという問題がある。また、従来の伸び
計にあっては、一対の標線マークごとにそれぞれ1台づ
つ必要であり、コンパクト化並びに低コスト化が充分で
ない。
C. Problem to be Solved by the Invention However, in the optical extensometer using the conventional CCD, the resolution of the CCD is low, and thus the displacement measurement accuracy of a material having a high elastic coefficient such as a metal material and a small displacement amount is low. However, there is a problem that it cannot be measured substantially. In addition, in the conventional extensometer, one pair is required for each pair of marked marks, and compactification and cost reduction are not sufficient.

本発明の目的は、弾性係数の高い変形量の小さい材料で
も制度よくその変位を測定でき、また、小型化が容易な
光学式伸び計を提供することにある。
An object of the present invention is to provide an optical extensometer which can accurately measure the displacement of a material having a high elastic coefficient and a small amount of deformation and which can be easily downsized.

D.課題を解決するための手段 本発明に係わる発明は、測定対象上の一対の基準点から
それぞれ反射する光束をカメラで受光して試料の変位量
を計測する光学式伸び計に適用される。そして、上述の
目的は、測定対象上の基準点を照明する光源と、一対の
光束を所定焦平面上にそれぞれ結像させる一対の結像光
学系と、所定焦平面上に配置され一対の光束を受光して
その受光位置に応じた信号を出力する単一の半導体位置
検出器と、半導体位置検出器上の一対の入射光束の位置
関係に対する半導体位置検出器の出力電圧を表す予め記
憶された基準データに基づいて、半導体位置検出器の出
力電圧から変位量を演算する演算手段とを具備すること
により達成される。
D. Means for Solving the Problems The invention according to the present invention is applied to an optical extensometer that measures a displacement amount of a sample by receiving light beams reflected by a pair of reference points on a measurement target with a camera. . Then, the above-mentioned objects are a light source that illuminates a reference point on a measurement target, a pair of imaging optical systems that respectively image a pair of light fluxes on a predetermined focal plane, and a pair of light fluxes that are arranged on a predetermined focal plane. A single semiconductor position detector that receives the light and outputs a signal according to the light receiving position, and the output voltage of the semiconductor position detector with respect to the positional relationship of a pair of incident light beams on the semiconductor position detector, which is stored in advance. This is achieved by including a calculation means for calculating the displacement amount from the output voltage of the semiconductor position detector based on the reference data.

E.作用 一対の基準点の各光束は単一の半導体位置検出器上にそ
れぞれ結像し、測定対象の変形に応じてその結像位置が
変動する。このような結像位置の変動に伴い、半導体位
置検出器の出力信号も変動する。半導体位置検出器上の
一対の入射光束の位置関係に対する半導体位置検出器の
出力電圧を表す基準データが予め記憶されており、半導
体位置検出器の出力信号と基準データとから演算手段に
より変位量が演算される。
E. Action Each light beam of the pair of reference points forms an image on a single semiconductor position detector, and the image formation position changes according to the deformation of the measurement target. The output signal of the semiconductor position detector also changes in accordance with such a change in the image forming position. Reference data representing the output voltage of the semiconductor position detector with respect to the positional relationship between the pair of incident light beams on the semiconductor position detector is stored in advance, and the displacement amount is calculated by the calculating means from the output signal of the semiconductor position detector and the reference data. Is calculated.

F.実施例 本発明に係る光学式伸び計の構成を示す第1図に基づい
て本発明の一実施例を説明する。
F. Example One example of the present invention will be described based on FIG. 1 showing the configuration of the optical extensometer according to the present invention.

110は光学式伸び計であり、試験片TP上に設けられた一
対の標線マークMKU、MKLに対して対向して設置される。
伸び計110は、標線マークMKU、MKLにそれぞれ光を照射
する光源111U、111L(ハロゲンランプや、半導体レーザ
ーなど)と、高輝度な標線マークMKU、MKLの反射光束を
所定焦平面上に結像させる結像光学系112U、112Lと、上
側の標線マークMKUからの反射光束を後述の半導体位置
検出器113に導く全反射ミラー115と、下側の標線マーク
MKLからの反射光束を半導体位置検出器113に導くハーフ
ミラー116と、所定焦平面上に配置され反射光束を受光
してその受光位置に応じた電圧信号を両端子に出力する
半導体位置検出器(PSD)113と、光源111U、111L、結像
光学系112U、112L、ミラー115、116および半導体位置検
出器113を収容し、試験時は試験片TPに対して不動のケ
ース114とから構成される。
Reference numeral 110 denotes an optical extensometer, which is installed so as to face a pair of mark marks MKU and MKL provided on the test piece TP.
The extensometer 110 includes light sources 111U and 111L (halogen lamps, semiconductor lasers, etc.) that irradiate light on the mark marks MKU and MKL, respectively, and high-brightness reflected light beams of the mark marks MKU and MKL on a predetermined focal plane. Imaging optical systems 112U and 112L for forming an image, a total reflection mirror 115 that guides a reflected light flux from the upper mark mark MKU to a semiconductor position detector 113 described later, and a lower mark mark.
A half mirror 116 that guides the reflected light flux from the MKL to the semiconductor position detector 113, and a semiconductor position detector that is arranged on a predetermined focal plane and receives the reflected light flux and outputs a voltage signal according to the light receiving position to both terminals ( PSD) 113, light sources 111U and 111L, imaging optical systems 112U and 112L, mirrors 115 and 116, and a semiconductor position detector 113, and a case 114 that is immovable with respect to the test piece TP during the test. .

全反射ミラー115の反射光束がハーフミラー116を透過し
て半導体位置検出器113上に入射されるが、無負荷状態
のときに、上下の標線マークMKU、MKLの各反射光束が半
導体位置検出器113上の同一の地点に入射するように光
学系が設定されている。別々の地点に入射させてもよ
い。
The reflected light flux of the total reflection mirror 115 passes through the half mirror 116 and is incident on the semiconductor position detector 113. However, in the unloaded state, the reflected light fluxes of the upper and lower mark lines MKU and MKL detect the semiconductor position. The optical system is set so that the light enters the same point on the container 113. You may make it inject into different points.

このように構成された光学式伸び計による変位検出は次
のように行なわれる。
Displacement detection by the optical extensometer configured as described above is performed as follows.

光源111U、111Lからの光はビーム光としてそれぞれ試験
片TP上に照射される。結像光学系112U、112Lの光軸は各
標線マークMKU、MKLに軸が合わされており、高輝度の標
線マークMKU、MKLは、結像光学系112U、112Lおよびミラ
ー115、116を介して半導体位置検出器113上に結像され
る。半導体位置検出器113の両端端子からは、周知のよ
うに受光位置に応じた電圧信号が取り出される。
The light from the light sources 111U and 111L is applied as beam light onto the test piece TP. The optical axes of the imaging optical systems 112U and 112L are aligned with the respective mark marks MKU and MKL, and the high-brightness mark marks MKU and MKL pass through the imaging optical systems 112U and 112L and the mirrors 115 and 116. An image is formed on the semiconductor position detector 113. As is well known, a voltage signal corresponding to the light receiving position is taken out from both terminals of the semiconductor position detector 113.

試験に先立って、半導体位置検出器113の両端子電圧を
読み込んで記憶する。試験片TPに引っ張り荷重を与える
と試験片TPが伸び、各標線マークMKU、MKLが移動し、半
導体位置検出器113上の受光位置が変化する。上下の標
線の伸び量は異なるから、半導体位置検出器113上で2
つの受光位置が伸び量にしたがって離れる。その時の半
導体位置検出器113の一対の端子電圧の変動を測定する
ことにより、試験片TPの伸び量を検出できる。
Prior to the test, both terminal voltages of the semiconductor position detector 113 are read and stored. When a tensile load is applied to the test piece TP, the test piece TP extends, the respective mark marks MKU and MKL move, and the light receiving position on the semiconductor position detector 113 changes. Since the amount of elongation of the upper and lower marked lines is different, it is 2 on the semiconductor position detector 113.
The two light receiving positions are separated according to the amount of extension. The elongation amount of the test piece TP can be detected by measuring the fluctuation of the pair of terminal voltages of the semiconductor position detector 113 at that time.

すなわち、一対の端子電圧の変動から次のようにして伸
び量を求めることができる。まず、基準となる試験片に
対して引っ張り荷重を与え、別途設けた伸び計で試験片
の伸びを正確に検出する。そして、この検出値を半導体
位置検出器113の両端子電圧と対応づけ、これにより基
準バックデータを作成する。このバックデータと試験時
の一対の両端子電圧の変動を突き合せて試験片の伸び量
とを求めることができる。
That is, the amount of expansion can be obtained from the variation of the pair of terminal voltages as follows. First, a tensile load is applied to a reference test piece, and the elongation of the test piece is accurately detected by an extensometer separately provided. Then, this detected value is associated with both terminal voltages of the semiconductor position detector 113, and reference back data is created by this. The back data and the fluctuations of the pair of terminal voltages at the time of the test can be compared to obtain the elongation amount of the test piece.

試験片TPの弾性係数が高く変形量が小さいので、標線か
らの反射光束は半導体位置検出器113の測定範囲内で移
動し、したがって、伸び計110を変位量に応じて追動す
る必要がなく、伸び計の簡素化が図られる。また、半導
体位置検出器113の分解能は、電荷結合型光電変換素子
(CCD)の分解能よりも高いから、微小変位量の測定を
高精度で行なうことができる。
Since the elastic modulus of the test piece TP is high and the amount of deformation is small, the luminous flux reflected from the marked line moves within the measurement range of the semiconductor position detector 113, and therefore it is necessary to follow the extensometer 110 according to the amount of displacement. The extensometer can be simplified. Further, since the resolution of the semiconductor position detector 113 is higher than that of the charge coupled photoelectric conversion element (CCD), the minute displacement amount can be measured with high accuracy.

この実施例では、半導体位置検出器113が1つでよく、
コンパクトな伸び計を提供できる。
In this embodiment, one semiconductor position detector 113 is sufficient,
We can provide a compact extensometer.

また以上では、伸び計側に照明光源を一体的に設けた
が、伸び計のケースとは別に設けてもよい。さらにま
た、圧縮試験機の圧盤など、材料試験機の治具に同様の
光源を設けてもよい。
Further, in the above, the illumination light source is integrally provided on the extensometer side, but it may be provided separately from the extensometer case. Furthermore, a similar light source may be provided on a jig of a material testing machine such as a platen of a compression testing machine.

G.発明の効果 以上説明したように本発明によれば、弾性係数が高く変
位量が微小の試験片に対して高精度でその変位量を測定
できる。また、一対の光束を単一の半導体検出器上に導
くようにしたので、コンパクトで廉価な光学式伸び計を
提供できる。
G. Effects of the Invention As described above, according to the present invention, the displacement amount of a test piece having a high elastic coefficient and a small displacement amount can be measured with high accuracy. Further, since the pair of light beams are guided onto the single semiconductor detector, a compact and inexpensive optical extensometer can be provided.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明に係る光学式伸び計の実施例の構成を示
す構成図、第2図は従来例を示す図である。 110:光学式伸び計 111U,111L:光源 112U,112L:結像光学系 113:半導体位置検出器 114:ケース 115:全反射ミラー 116:ハーフミラー TP:試験片 MKU、MKL:標線マーク
FIG. 1 is a configuration diagram showing a configuration of an embodiment of an optical extensometer according to the present invention, and FIG. 2 is a diagram showing a conventional example. 110: Optical extensometer 111U, 111L: Light source 112U, 112L: Imaging optical system 113: Semiconductor position detector 114: Case 115: Total reflection mirror 116: Half mirror TP: Specimen MKU, MKL: Mark mark

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】測定対象上の一対の基準点からそれぞれ反
射する光束をカメラで受光して試料の変位量を計測する
光学式伸び計であって、測定対象上の基準点を照明する
光源と、前記一対の光束を所定焦平面上にそれぞれ結像
させる一対の結像光学系と、前記所定焦平面上に配置さ
れ前記一対の光束を受光してその受光位置に応じた信号
を出力する単一の半導体位置検出器と、前記半導体位置
検出器上の一対の入射光束の位置関係に対する半導体位
置検出器の出力電圧を表す予め記憶された基準データに
基づいて、前記半導体位置検出器の出力電圧から変位量
を演算する演算手段とを具備することを特徴とする光学
式伸び計。
1. An optical extensometer for measuring the amount of displacement of a sample by receiving light beams reflected by a pair of reference points on a measurement target by a camera, and a light source for illuminating the reference point on the measurement target. A pair of imaging optical systems for respectively imaging the pair of light beams on a predetermined focal plane, and a single unit for receiving the pair of light beams arranged on the predetermined focal plane and outputting a signal according to the light receiving position. An output voltage of the semiconductor position detector based on one semiconductor position detector and prestored reference data representing an output voltage of the semiconductor position detector with respect to a positional relationship between a pair of incident light beams on the semiconductor position detector. An optical extensometer, comprising: a calculating unit that calculates a displacement amount from the optical extensometer.
JP2335543A 1990-11-30 1990-11-30 Optical extensometer Expired - Lifetime JPH07101169B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2335543A JPH07101169B2 (en) 1990-11-30 1990-11-30 Optical extensometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335543A JPH07101169B2 (en) 1990-11-30 1990-11-30 Optical extensometer

Publications (2)

Publication Number Publication Date
JPH04204106A JPH04204106A (en) 1992-07-24
JPH07101169B2 true JPH07101169B2 (en) 1995-11-01

Family

ID=18289756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2335543A Expired - Lifetime JPH07101169B2 (en) 1990-11-30 1990-11-30 Optical extensometer

Country Status (1)

Country Link
JP (1) JPH07101169B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004085529A (en) * 2002-06-25 2004-03-18 Matsushita Electric Works Ltd Laser distance-measuring equipment and method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120908A (en) * 1984-11-19 1986-06-09 Nippon Kogaku Kk <Nikon> Mark position detection device
JPH0617770B2 (en) * 1985-03-29 1994-03-09 日本電信電話株式会社 Mark detector
JPS6281515A (en) * 1985-10-04 1987-04-15 Mitsubishi Electric Corp Clinometer
JPS63308536A (en) * 1987-02-20 1988-12-15 Shimadzu Corp extensometer

Also Published As

Publication number Publication date
JPH04204106A (en) 1992-07-24

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