JPH07101652B2 - High frequency coil manufacturing method - Google Patents
High frequency coil manufacturing methodInfo
- Publication number
- JPH07101652B2 JPH07101652B2 JP63278131A JP27813188A JPH07101652B2 JP H07101652 B2 JPH07101652 B2 JP H07101652B2 JP 63278131 A JP63278131 A JP 63278131A JP 27813188 A JP27813188 A JP 27813188A JP H07101652 B2 JPH07101652 B2 JP H07101652B2
- Authority
- JP
- Japan
- Prior art keywords
- coil
- conductor
- film
- coil conductor
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000007772 electroless plating Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000007733 ion plating Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 71
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Manufacturing Cores, Coils, And Magnets (AREA)
- Coils Or Transformers For Communication (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、基板上にコイル導体を形成してなる高周波コ
イルに関し、特にコイル導体の幅及び隣合うコイル導体
の間隔を小さくすることによりコイルの小型化をはか
り、かつコイル導体の厚みを大きくすることによりコイ
ルのＱを向上できるようにした構造及びその製造方法に
関する。Description: TECHNICAL FIELD The present invention relates to a high-frequency coil in which a coil conductor is formed on a substrate, and in particular, a coil is formed by reducing the width of the coil conductor and the distance between adjacent coil conductors. The present invention relates to a structure in which the Q of the coil can be improved by reducing the size of the coil and increasing the thickness of the coil conductor, and a manufacturing method thereof.
従来から、コイルとして、金属導体を螺旋状に巻回して
なる空心コイル及びフェライトやアルミナ等のボビンに
巻線を施してなるボビン巻線コイル等がある。しかしこ
の両コイルは形状が大きく，特性が不安定であることか
ら、高周波領域では採用できない。これに対して絶縁体
基板の表面に金属薄膜からなる帯状のコイル導体を形成
してなる高周波コイルは、部品形状を小型化できるとと
もに、マイクロ波帯の高周波領域に採用できる。この高
周波コイルを製造する場合は、従来、以下の方法が採用
されている。例えばガラス，セラミックス製基板の表面
全面にスパッタリングあるいは蒸着法等によりAg等の金
属薄膜を形成し、該薄膜の上面にコイルパターンに応じ
た形状のレジスト膜を形成し、これにより上記薄膜の不
要部分をウェットエッチング（化学エッチング）により
除去してコイル導体を形成する。Conventionally, as a coil, there are an air-core coil formed by spirally winding a metal conductor, and a bobbin winding coil formed by winding a bobbin such as ferrite or alumina. However, these two coils have large shapes and unstable characteristics, so they cannot be used in the high frequency region. On the other hand, a high frequency coil in which a band-shaped coil conductor made of a metal thin film is formed on the surface of an insulating substrate can be made smaller in component shape and can be used in the high frequency region of the microwave band. In the case of manufacturing this high frequency coil, the following method has been conventionally used. For example, a thin metal film such as Ag is formed on the entire surface of a glass or ceramic substrate by sputtering or vapor deposition, and a resist film having a shape corresponding to the coil pattern is formed on the upper surface of the thin film. Are removed by wet etching (chemical etching) to form a coil conductor.
ところで、上記従来の高周波コイルにおいては、コイル
導体をスパッタリング等の薄膜技術により形成すること
から、このコイル導体の厚みが薄い分導体抵抗が大きく
なり、Ｑが低いという問題があり、このＱの向上が要請
されている。By the way, in the above-mentioned conventional high-frequency coil, since the coil conductor is formed by a thin film technique such as sputtering, there is a problem that the conductor resistance increases due to the thin thickness of the coil conductor and the Q is low. Has been requested.
ここで、上記Ｑを向上させるには、コイル導体の幅ある
いは厚みの少なくとも一方を大きくして導体抵抗を小さ
くしてやればよいことが知られている。しかし、コイル
導体の幅を大きくすれば、コイル形状が大きくなってし
まうという別の問題が発生して好ましくない。そこで、
コイル導体の厚みのみを大きくすること、すなわち上記
薄膜技術により形成されたコイル導体の上面に、さらに
コイル導体を重ねて形成して厚みを大きくすることが考
えられる。しかしながら、線幅，間隔が数十μｍと非常
に細いコイル導体の上面に寸法精度よく同一のコイル導
体を形成することは困難である。Here, in order to improve the Q, it is known that at least one of the width and the thickness of the coil conductor may be increased to reduce the conductor resistance. However, if the width of the coil conductor is increased, another problem that the coil shape becomes large is not preferable, which is not preferable. Therefore,
It is conceivable to increase only the thickness of the coil conductor, that is, to increase the thickness by further forming the coil conductor on the upper surface of the coil conductor formed by the thin film technique. However, it is difficult to form the same coil conductor with high dimensional accuracy on the upper surface of a coil conductor having a very narrow line width and spacing of several tens of μm.
ここで、本件発明者らは、予め大きなＱが得られるよう
に厚みの大きな導体膜を形成しておき、これをウエット
エッチクングしてコイル導体を形成する方法を検討し
た。しかしながら、導体膜の上面にコイル導体に応じた
形状のレジスト膜を形成した後、これを薬品溶液中に浸
漬してエッチングするウエットエッチングでは、コイル
導体のエッジ部分や厚み方向の側面が侵食されてギザギ
ザになり易く、加工精度が悪化するため、例えばコイル
導体の幅を10μｍに設計した場合、コイル導体の厚みを
２μｍより大きくすることができなかった。これを、コ
イル導体の幅と厚みの関係で示すと、幅と厚みの比率
（厚み／幅）を0.2以上にすることができなかった。つ
まり、ウエットエッチングによる方法では、コイル導体
の厚みを大きくしてＱを大きくするという目的は達成で
きないのである。Here, the inventors of the present invention studied a method of forming a conductor film having a large thickness in advance so as to obtain a large Q and then wet etching this to form a coil conductor. However, in the wet etching in which a resist film having a shape corresponding to the coil conductor is formed on the upper surface of the conductor film and then the resist film is immersed in a chemical solution for etching, the edge portion of the coil conductor and the side surface in the thickness direction are eroded. If the width of the coil conductor is designed to be 10 μm, for example, the thickness of the coil conductor cannot be made larger than 2 μm because it tends to become jagged and the processing accuracy deteriorates. When this is shown by the relationship between the width and the thickness of the coil conductor, the width-to-thickness ratio (thickness / width) could not be set to 0.2 or more. That is, the wet etching method cannot achieve the purpose of increasing the thickness of the coil conductor and increasing Q.
本発明の目的は、上記厚膜化した導体膜を精度良く加工
できるエッチング方法を見出し、コイルの小型化をはか
り、かつＱを向上できる高周波コイル及びその製造方法
を提供することにある。An object of the present invention is to find an etching method capable of accurately processing the above-mentioned thickened conductor film, and to provide a high-frequency coil capable of reducing the size of the coil and improving Q, and a manufacturing method thereof.
そこで本発明は、基板の表面に導体膜を形成し、該導体
膜の表面を覆うように上記基板の上面にレジスト膜を形
成し、該レジスト膜の不要部分をエッチング法により除
去してコイル導体に対応するマスクを形成し、しかる後
該マスクの開口部分の導体膜をドライエッチング法によ
り除去して幅と厚みの比率が0.2以上5.0以下のコイル導
体を形成したことを特徴としている。Therefore, the present invention provides a coil conductor by forming a conductor film on the surface of a substrate, forming a resist film on the upper surface of the substrate so as to cover the surface of the conductor film, and removing unnecessary portions of the resist film by an etching method. Is formed, and then the conductor film in the opening portion of the mask is removed by dry etching to form a coil conductor having a width-thickness ratio of 0.2 or more and 5.0 or less.
ここで、上記ドライエッチングとしては、イオンビーム
エッチング，スパッタエッチング，プラズマエッチング
が採用できる。Here, as the dry etching, ion beam etching, sputter etching, or plasma etching can be adopted.
また、上記導体膜の形成方法としては、スパッタリン
グ，蒸着，イオンプレーティング，あるいは電解，無電
解メッキ法が採用でき、これらの方法により一層，ある
いは複数層からなる導体膜を形成すればよい。As the method of forming the conductor film, sputtering, vapor deposition, ion plating, electrolysis or electroless plating can be adopted, and the conductor film may be formed of one layer or plural layers by these methods.
さらに、本発明の高周波コイルには、基板上にコイル導
体及び絶縁膜を一層だけ形成してなる単層のもの、コイ
ル導体と絶縁膜を交互に積層してなる多層のものが含ま
れる。Further, the high-frequency coil of the present invention includes a single-layer coil in which only one layer of the coil conductor and the insulating film is formed on the substrate, and a multi-layer coil in which the coil conductor and the insulating film are alternately laminated.
さらにまた、本発明のコイル導体の形状としては、例え
ばスパイラルタイプ，ミアンダタイプ等が考えられ、特
に限定されるものではない。Furthermore, the shape of the coil conductor of the present invention may be, for example, a spiral type, a meander type, or the like, and is not particularly limited.
本発明に係る高周波コイルの製造方法によれば、基板に
形成された導体膜の不要部分を、ドライエッチングによ
り除去してコイル導体を形成したので、ウェットエッチ
ングによる場合の加工精度の悪化を回避でき、寸法精度
が高く、かつ幅に対して厚みの大きなコイル導体を形成
でき、小型でかつＱの大きなコイルを形成することがで
きる。このドライエッチング法は、導体膜の不要部分を
薬品溶液で溶かすという方法ではなく、例えば不活性ガ
ス，イオン等を打ち込んで削り取る方法であるから、高
い加工精度が得られる。その結果、幅と厚みの比率を0.
2以上に形成した場合にも、厚み方向の側面を精度良く
垂直にでき、導体抵抗を小さくしてＱを向上できる。た
だし、幅と厚みの比率が5.0を超えると、コイル導体の
形成は困難である。According to the method for manufacturing a high frequency coil of the present invention, since unnecessary portions of the conductor film formed on the substrate are removed by dry etching to form the coil conductor, it is possible to avoid deterioration of processing accuracy in the case of wet etching. A coil conductor having high dimensional accuracy and a large thickness with respect to the width can be formed, and a small coil having a large Q can be formed. Since this dry etching method is not a method of dissolving an unnecessary portion of the conductor film with a chemical solution but a method of implanting an inert gas, ions or the like and scraping off, a high processing accuracy can be obtained. As a result, the ratio of width to thickness is 0.
Even in the case of forming two or more, the side surface in the thickness direction can be made vertical with high accuracy, the conductor resistance can be reduced, and the Q can be improved. However, if the width-to-thickness ratio exceeds 5.0, it is difficult to form the coil conductor.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図ないし第３図は本発明の一実施例による高周波コ
イルの製造方法を説明するための図である。1 to 3 are views for explaining a method of manufacturing a high frequency coil according to an embodiment of the present invention.
まず、本発明の一実施例による高周波コイルの構造につ
いて説明する。First, the structure of a high frequency coil according to an embodiment of the present invention will be described.
絶縁膜の導体表面より上側部分を除去した状態を示す第
１図において、１は本実施例のチップ型の高周波コイル
であり、これはガラス又はセラミックスからなる絶縁体
基板２の上面の中央部に、膜厚２〜50μm,線幅10μm,間
隔10μｍの金属膜からなるスパイラル状のコイル導体４
をパターン形成するとともに、上記基板２上面の左，右
縁部に端子電極3a,3bを形成して構成されている。ま
た、上記コイル導体４の外端部4aは図面左側の端子電極
3aに接続されており、内端部4bは後述するリード電極８
を介して図面右側の端子電極3bに接続されている。In FIG. 1 showing a state in which the upper part of the insulating film from the conductor surface is removed, 1 is a chip type high frequency coil of the present embodiment, which is located at the center of the upper surface of an insulating substrate 2 made of glass or ceramics. , Spiral coil conductor 4 composed of a metal film having a film thickness of 2 to 50 μm, a line width of 10 μm, and an interval of 10 μm
And the terminal electrodes 3a and 3b are formed on the left and right edges of the upper surface of the substrate 2. The outer end 4a of the coil conductor 4 is a terminal electrode on the left side of the drawing.
3a and an inner end 4b is connected to a lead electrode 8 described later.
Is connected to the terminal electrode 3b on the right side of the drawing.
上記コイル導体４及び端子電極3a,3bは、上記基板２の
上面に、Ti,Cr,Pd等からなる金属膜、及びこれの表面に
Ni,Cu,Ag,Al等からなる金属膜を蒸着，スパッタリング
あるいはイオンプレーティング等により形成し、さらに
該金属膜の表面に電解，又は無電解メッキによりAg,Cu,
Au等を被覆して厚さが２μｍ以上になるように導体膜を
形成し、この導体膜の不要部分をドライエッチングによ
り除去して形成されたものである。The coil conductor 4 and the terminal electrodes 3a, 3b are formed on the upper surface of the substrate 2, a metal film made of Ti, Cr, Pd, etc., and the surface thereof.
A metal film made of Ni, Cu, Ag, Al or the like is formed by vapor deposition, sputtering or ion plating, and Ag, Cu, or electroless plating is applied to the surface of the metal film.
It is formed by coating Au or the like to form a conductor film having a thickness of 2 μm or more, and removing unnecessary portions of the conductor film by dry etching.
また、上記コイルの断面を示す第２図において、上記基
板２の各端子電極3a,3bを除くコイル導体４の上面には
ポリイミドあるいはポリアミド等からなる樹脂製絶縁膜
５がコーティングされており、この絶縁膜５の上記コイ
ル導体４の内端部4b部分にはスルーホール６が形成され
ている。また、上記絶縁膜５の上面には帯状のリード電
極８が形成されており、該電極８の一端は上記スルーホ
ール６を介して内端部4bに接続され、他端は端子電極3b
に接続されている。これにより本実施例の高周波コイル
１が構成されている。なお、電極８を保護、絶縁するた
めに、絶縁膜５及び電極８の上面に、さらに絶縁膜を形
成してもよい。Further, in FIG. 2 showing the cross section of the coil, a resin insulating film 5 made of polyimide or polyamide is coated on the upper surface of the coil conductor 4 excluding the terminal electrodes 3a and 3b of the substrate 2. Through holes 6 are formed in the inner end portion 4b of the coil conductor 4 of the insulating film 5. A strip-shaped lead electrode 8 is formed on the upper surface of the insulating film 5, one end of the electrode 8 is connected to the inner end 4b through the through hole 6, and the other end is the terminal electrode 3b.
It is connected to the. This constitutes the high frequency coil 1 of the present embodiment. An insulating film may be further formed on the upper surfaces of the insulating film 5 and the electrode 8 in order to protect and insulate the electrode 8.
次に、本発明の一実施例による上記高周波コイル１の製
造方法を説明する。Next, a method of manufacturing the high frequency coil 1 according to an embodiment of the present invention will be described.
第３図（ａ）ないし第３図（ｈ）は本実施例の製造工程
を示す断面図であり、この各図は第２図の中央部分を示
す。3 (a) to 3 (h) are cross-sectional views showing the manufacturing process of this embodiment, each of which shows the central portion of FIG.
まず、鏡面研磨が施された厚さ0.6mmのガラス基板
２の上面全面に、密着性を向上させるためのTi膜7aをス
パッタリング法により形成し、次に該Ti膜7aの表面にT
i,Agを同時に２元スパッタリングすることによりTi-Ag
膜7bを形成し、続いてこのTi-Ag膜7bの表面に導電性の
良いAg膜7cを同じくスパッタリングにより形成して、３
層構造の第１金属膜７を形成する（第３図（ａ））。First, a Ti film 7a for improving adhesion is formed on the entire upper surface of a glass substrate 2 having a thickness of 0.6 mm that has been mirror-polished by a sputtering method, and then a T film is formed on the surface of the Ti film 7a.
Ti-Ag can be obtained by simultaneously performing binary sputtering of i and Ag.
The film 7b is formed, and subsequently, the Ag film 7c having good conductivity is formed on the surface of the Ti-Ag film 7b by the same sputtering, and 3
A first metal film 7 having a layered structure is formed (FIG. 3A).
次に、上記第１金属膜７の表面に、電解，又は無電
解メッキにより第２金属膜９を形成する。これにより、
厚さ２〜50μｍ程度の導体膜10を形成する（第３図
（ｂ））。Next, the second metal film 9 is formed on the surface of the first metal film 7 by electrolytic or electroless plating. This allows
A conductor film 10 having a thickness of about 2 to 50 μm is formed (FIG. 3 (b)).
上記導体膜10の表面に感光性ポリイミド樹脂からな
るレジスト膜11をコーティングし、これを乾燥させる
（第３図（ｃ））。そして、上記レジスト膜11のコイル
導体４及び端子電極3a,3b部分以外の不要部分をマスク
で覆い、これを露光する。次に、これを現像（エッチン
グ）する。すると、コイル導体４及び端子電極3a,3b部
分の上面のみレジスト膜11が残ることになる。これによ
り、コイル導体4,端子電極3a,3bに対応した開口12aを有
するマスク12が形成されることとなる（第３図
（ｄ））。A resist film 11 made of a photosensitive polyimide resin is coated on the surface of the conductor film 10 and dried (FIG. 3 (c)). Then, an unnecessary portion of the resist film 11 other than the coil conductor 4 and the terminal electrodes 3a and 3b is covered with a mask and exposed. Next, this is developed (etched). Then, the resist film 11 remains only on the upper surfaces of the coil conductor 4 and the terminal electrodes 3a and 3b. As a result, the mask 12 having the openings 12a corresponding to the coil conductor 4 and the terminal electrodes 3a and 3b is formed (FIG. 3 (d)).
次に、上記ガラス基板２の上面にドライエッチング
を施す。このドライエッチングは、ECRプラズマエッチ
ング，希ガスイオンビームエッチング，あるいは希ガス
逆スパッタリングエッチングを採用する。例えば反応性
ECRプラズマエッチングは、減圧したガスに高周波電界
をかけて放電を起こし、この低温のプラズマ中に存在す
る化学的に活性な原子，電子，イオンと、上記不要部分
の導電膜10との化学反応でエッチングするものである。Next, dry etching is performed on the upper surface of the glass substrate 2. The dry etching employs ECR plasma etching, rare gas ion beam etching, or rare gas reverse sputtering etching. Eg reactivity
In the ECR plasma etching, a high-frequency electric field is applied to the depressurized gas to cause discharge, and the chemically active atoms, electrons, and ions present in the low-temperature plasma are chemically reacted with the conductive film 10 in the unnecessary portion. It is to be etched.
これにより、上記マスク12の開口12a部分の導体膜10が
削り取られ、線幅10μm,間隔10μｍのコイル導体４及び
端子電極3a,3bが形成される（第３図（ｅ））。しかる
後、上記マスク12を剥離，除去する。As a result, the conductor film 10 in the opening 12a portion of the mask 12 is scraped off, and the coil conductor 4 and the terminal electrodes 3a and 3b having a line width of 10 μm and an interval of 10 μm are formed (FIG. 3 (e)). After that, the mask 12 is peeled and removed.
なお、上記ポリイミドが非感光性の場合は、ポジ形レジ
ストを塗布した後、絶縁膜11の残さない部分を露光して
エッチングすればよい。When the polyimide is non-photosensitive, a positive resist may be applied, and then a portion of the insulating film 11 that is not left may be exposed and etched.
次に、上記コイル導体4,端子電極3a,3bのガラス基
板２上面全面に感光性ポリイミド樹脂をコーティングし
て絶縁膜５を形成し、乾燥させる（第３図（ｆ））。そ
して、マスクをかけてこの絶縁膜５の上記端子電極3a,3
b（第２図参照），及びスルーホール６対応部分を除く
以外の部分について、上記工程と同様の方法にて露光
−現像を行う。すると、上記端子電極3a,3b（第２図参
照）部分が露出されるとともに、内端部4b部分にスルー
ホール６が形成されることになる（第３図（ｇ））。Next, the entire surface of the upper surface of the glass substrate 2 of the coil conductor 4, the terminal electrodes 3a and 3b is coated with a photosensitive polyimide resin to form an insulating film 5 and dried (FIG. 3 (f)). Then, a mask is put over the terminal electrodes 3a, 3a of the insulating film 5.
Exposure-development is performed in the same manner as in the above steps except for b (see FIG. 2) and the portion corresponding to the through hole 6. Then, the terminal electrodes 3a, 3b (see FIG. 2) are exposed and the through hole 6 is formed in the inner end portion 4b (FIG. 3 (g)).
最後に、上記絶縁膜５の上面にスパッタリングによ
り金属膜を形成し、これの不要部分をエッチングして、
上記内端部4bと端子電極3bとを接続するリード電極８を
形成する（第３図（ｈ））。これにより、本実施例の1.
6×3.2×0.8mmからなる大きさの高周波コイル１が製造
される（第１図及び第２図参照）。Finally, a metal film is formed on the upper surface of the insulating film 5 by sputtering, and unnecessary portions of the metal film are etched,
A lead electrode 8 that connects the inner end portion 4b and the terminal electrode 3b is formed (FIG. 3 (h)). This results in 1.
A high frequency coil 1 having a size of 6 × 3.2 × 0.8 mm is manufactured (see FIGS. 1 and 2).
なお、上記工程では、コイル導体４の内端部4bと端子
電極3bとをリード電極８で接続したが、上記両者4b,3b
をAu線によるワイヤボンディングにより接続し、これを
ナイロン，エポキシ樹脂系の接着剤で固定してもよい。In the above step, the inner end 4b of the coil conductor 4 and the terminal electrode 3b were connected by the lead electrode 8.
May be connected by wire bonding with Au wire and fixed with an adhesive of nylon or epoxy resin.
次に本実施例の作用効果について説明する。Next, the function and effect of this embodiment will be described.
本実施例の高周波コイル１によれば、基板２の上面に導
体膜10を形成し、該導体膜10の表面を覆うように上記基
板２の上面にレジスト膜11を形成し、該レジスト膜11の
不要部分をエッチングにより除去してコイル導体４、端
子電極3a,3bに対応するマスク12を形成し、しかる後マ
スク12の開口12a部分の導体膜10をドライエッチング法
により除去したので、加工精度の良い垂直な側面を有す
る幅と厚みの比率が0.2以上のコイル導体４が形成で
き、それだけ導体抵抗を小さくでき、Ｑを向上できる。
これにより、高周波領域,GHZ帯まで自己共振しない小型
の平面コイルが得られる。According to the high frequency coil 1 of this embodiment, the conductor film 10 is formed on the upper surface of the substrate 2, the resist film 11 is formed on the upper surface of the substrate 2 so as to cover the surface of the conductor film 10, and the resist film 11 is formed. Unnecessary parts are removed by etching to form the mask 12 corresponding to the coil conductor 4 and the terminal electrodes 3a, 3b, and then the conductor film 10 in the opening 12a part of the mask 12 is removed by the dry etching method. It is possible to form the coil conductor 4 having a good vertical side surface and a width-to-thickness ratio of 0.2 or more, which can reduce the conductor resistance and improve the Q.
As a result, a small planar coil that does not self-resonate up to the high frequency region and the GHZ band can be obtained.
また、本実施例によれば、レジスト膜11,絶縁膜５にポ
リイミドあるいはポリアミド樹脂を採用することによ
り、マスク12やスルーホール６を形成する際の微細加工
を可能にでき、寸法精度に対する信頼性を向上できると
ともに、耐熱性，耐薬剤性，耐湿性に優れ、かつヒート
ショック性，耐振動性特性にも優れた部品が得られる。Further, according to the present embodiment, by adopting polyimide or polyamide resin for the resist film 11 and the insulating film 5, it is possible to perform fine processing at the time of forming the mask 12 and the through hole 6, and to improve the reliability of dimensional accuracy. In addition to improving heat resistance, chemical resistance, and moisture resistance, parts with excellent heat shock resistance and vibration resistance can be obtained.
なお、上記実施例では、ガラス基板２上に、コイル導体
４及び絶縁膜５を一層形成した場合を例にとって説明し
たが、本発明は上記実施例のコイル１において、上記絶
縁膜５の上面にさらにコイル導体，絶縁膜を繰り返し形
成してなる多層コイルにも適用でき、また上記基板２を
挟んだ両表面にコイルを形成してなるものにも適用でき
る。In the above embodiment, the case where one layer of the coil conductor 4 and the insulating film 5 is formed on the glass substrate 2 has been described as an example. However, in the coil 1 of the above embodiment, the present invention is provided on the upper surface of the insulating film 5. Further, the present invention can be applied to a multi-layer coil in which a coil conductor and an insulating film are repeatedly formed, and also to a coil in which coils are formed on both surfaces sandwiching the substrate 2.
また、上記実施例では、第１金属膜７の上面に第２金属
膜９を形成して導体膜10を形成した場合を例にとって説
明したが、この導体膜10の形成方法はこれに限られるも
のではなく、例えばスパッタリング，あるいは電解，無
電解メッキだけで導体膜10を形成してもよい。Further, in the above embodiment, the case where the second metal film 9 is formed on the upper surface of the first metal film 7 to form the conductor film 10 has been described as an example, but the method of forming the conductor film 10 is not limited to this. However, the conductor film 10 may be formed only by sputtering, electrolysis, or electroless plating.
さらに、上記実施例ではスパイラル状のコイルを例にと
って説明したが、本発明は勿論これに限られるものでは
ない。例えば、第４図に示すようなミアンダタイプのコ
イル導体20にも適用でき、この場合も上記実施例と同様
の効果が得られる。Furthermore, although the spiral coil has been described as an example in the above embodiment, the present invention is not limited to this. For example, it can be applied to the meander type coil conductor 20 as shown in FIG. 4, and in this case, the same effect as that of the above embodiment can be obtained.
さらにまた、上記実施例では高周波コイル１を例にとっ
たが、本発明はコイルとコンデンサとを組み合わせてな
るLCフィルタや、トランスなどにも適用できる。Furthermore, although the high frequency coil 1 is taken as an example in the above-mentioned embodiment, the present invention can be applied to an LC filter including a coil and a capacitor in combination, a transformer and the like.
以上のように本発明に係る高周波コイルの製造方法によ
れば、基板上に形成された導体膜をドライエッチングで
処理してコイル導体を形成したので、加工精度を向上し
て寸法精度に優れ、かつ幅に対して厚みの大きなコイル
パターンが形成できるとともに、Ｑを向上できる効果が
ある。As described above, according to the method for manufacturing a high-frequency coil according to the present invention, since the conductor film formed on the substrate is processed by dry etching to form the coil conductor, the processing accuracy is improved and the dimensional accuracy is excellent, In addition, a coil pattern having a large thickness with respect to the width can be formed, and Q can be improved.
第１図ないし第３図は本発明の一実施例による高周波コ
イルの製造方法を説明するための図であり、第１図はそ
の平面図、第２図はその断面図、第３図（ａ）ないし第
３図（ｈ）はそれぞれ製造工程を示す断面図、第４図は
上記実施例の変形例を示す斜視図である。 図において、１は高周波コイル、２はガラス基板（基
板）、４はコイル導体、10は導体膜、11はレジスト膜、
12はドライエッチング用マスク、12aはドライエッチン
グ用マスクの開口である。1 to 3 are views for explaining a method of manufacturing a high frequency coil according to an embodiment of the present invention. FIG. 1 is a plan view thereof, FIG. 2 is a sectional view thereof, and FIG. ) To FIG. 3 (h) are sectional views showing the manufacturing process, and FIG. 4 is a perspective view showing a modified example of the above embodiment. In the figure, 1 is a high frequency coil, 2 is a glass substrate (substrate), 4 is a coil conductor, 10 is a conductor film, 11 is a resist film,
Reference numeral 12 is a dry etching mask, and 12a is an opening of the dry etching mask.
Claims (1)
オンプレーテイングにより第１導体膜を形成し、該第１
導体膜上に電解メッキまたは無電解メッキにより第２導
体膜を形成し、該第２導体膜の表面を覆うように上記基
板の上面にレジスト膜を形成し、該レジスト膜の不要部
分をエッチング法により除去してコイル導体に対応する
マスクを形成し、しかる後該マスクの開口部分の導体膜
をドライエッチング法により除去して上記導体膜の幅と
厚みの比率（厚み／幅）が0.2以上5.0以下のコイル導体
を形成したことを特徴とする高周波コイルの製造方法。1. A first conductor film is formed on the surface of a substrate by vapor deposition, sputtering, or ion plating, and the first conductor film is formed.
A second conductor film is formed on the conductor film by electrolytic plating or electroless plating, a resist film is formed on the upper surface of the substrate so as to cover the surface of the second conductor film, and an unnecessary portion of the resist film is etched. To form a mask corresponding to the coil conductor, and then the conductor film at the opening of the mask is removed by dry etching to obtain a width-to-thickness ratio (thickness / width) of 0.2 or more and 5.0. A method for manufacturing a high-frequency coil, comprising forming the following coil conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278131A JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63278131A JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123706A JPH02123706A (en) | 1990-05-11 |
| JPH07101652B2 true JPH07101652B2 (en) | 1995-11-01 |
Family
ID=17593030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63278131A Expired - Lifetime JPH07101652B2 (en) | 1988-11-01 | 1988-11-01 | High frequency coil manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07101652B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2982193B2 (en) * | 1989-12-28 | 1999-11-22 | 株式会社村田製作所 | Manufacturing method of high frequency coil |
| JPH0430406A (en) * | 1990-05-25 | 1992-02-03 | Murata Mfg Co Ltd | High frequency coil |
| DE4117878C2 (en) | 1990-05-31 | 1996-09-26 | Toshiba Kawasaki Kk | Planar magnetic element |
| JP3128825B2 (en) * | 1990-12-05 | 2001-01-29 | 株式会社村田製作所 | High frequency coil |
| JP2933096B2 (en) * | 1990-12-25 | 1999-08-09 | 株式会社村田製作所 | Chip type coil with shield |
| JPH0945570A (en) * | 1995-08-03 | 1997-02-14 | Koa Corp | Electronic component and method of manufacturing the same |
| KR100665114B1 (en) | 2005-01-07 | 2007-01-09 | 삼성전기주식회사 | Manufacturing Method of Planar Magnetic Inductor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691406A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Thin film coil |
| JPS5739598A (en) * | 1980-08-21 | 1982-03-04 | Asahi Chemical Ind | Thick film fine pattern |
-
1988
- 1988-11-01 JP JP63278131A patent/JPH07101652B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02123706A (en) | 1990-05-11 |
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