JPH07101756B2 - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- JPH07101756B2 JPH07101756B2 JP63086422A JP8642288A JPH07101756B2 JP H07101756 B2 JPH07101756 B2 JP H07101756B2 JP 63086422 A JP63086422 A JP 63086422A JP 8642288 A JP8642288 A JP 8642288A JP H07101756 B2 JPH07101756 B2 JP H07101756B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving surface
- photodiode
- light receiving
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はフォトダイオードに関する。The present invention relates to a photodiode.
従来のフォトダイオードは第３図，第４図に示すよう
に、半導体基体11の表面上に透過性絶縁膜13を備え、半
導体基体中には、この半導体基体11とは逆の導電型を示
す領域16を備え、この領域16が存在する部分が受光面12
となっている。領域16上を除く透過性絶縁膜上には金属
等の遮光膜15を有し、領域16上の透過性絶縁膜13に開口
部が設けてあり、この開口部を介して領域16に電極14が
接続している。As shown in FIGS. 3 and 4, the conventional photodiode has a transparent insulating film 13 on the surface of a semiconductor substrate 11, and the semiconductor substrate has a conductivity type opposite to that of the semiconductor substrate 11. The area 16 is provided, and the part where the area 16 exists is the light-receiving surface 12
Has become. A light-shielding film 15 made of metal or the like is provided on the transparent insulating film except on the region 16, an opening is provided in the transparent insulating film 13 on the region 16, and an electrode 14 is provided in the region 16 through this opening. Are connected.
この種のフォトダイオードに発光素子又は光ファイバー
から出射される光を入射させるためには、第４図に示す
ようにフォトダイオードの受光電流が最大となるよう
に、フォトダイオード又は光ファイバー18をXYZ方向に
移動させ、フォトダイオードと光ファイバー18を光結合
させていた。In order to allow the light emitted from the light emitting element or the optical fiber to enter the photodiode of this kind, the photodiode or the optical fiber 18 is moved in the XYZ directions so that the light receiving current of the photodiode becomes maximum as shown in FIG. It was moved and the photodiode and the optical fiber 18 were optically coupled.
上述した従来のフォトダイオードは受光面12と、電極14
と遮光膜の間の領域17にしか受光感度を有する面がな
く、かつ特性を良くするため受光面が小さい。このため
光ファイバーからの出射光をフォトダイオードに光結合
させるのは難かしく時間がかかるという欠点がある。The conventional photodiode described above has a light receiving surface 12 and an electrode 14
Only the region 17 between the light-shielding film and the light-shielding film has a surface having a light-receiving sensitivity, and the light-receiving surface is small in order to improve the characteristics. Therefore, it is difficult and time-consuming to optically couple the light emitted from the optical fiber to the photodiode.
本発明の目的はかかる欠点を除去し、光ファイバー等か
らの出射光を容易に光結合できるフォトダイオードを得
ることにある。An object of the present invention is to eliminate such drawbacks and to obtain a photodiode that can easily optically couple light emitted from an optical fiber or the like.
本発明のフォトダイオードは、半導体基体にpn接合を有
し、このpn接合がある部分を受光面として、受光面以外
の半導体基板表面上の透過性絶縁膜上に受光面を中心に
放射状に遮光膜を備え遮光膜間の隙間を、遮光膜に比し
て幅の狭い細線状とし、この細線状の隙間を、受光面を
中心とした放射状に形成した構造としている。A photodiode of the present invention has a pn junction in a semiconductor substrate, and a portion having this pn junction is used as a light receiving surface, and light is shielded radially on the transparent insulating film on the semiconductor substrate surface other than the light receiving surface with the light receiving surface as a center. The film is provided with a gap between the light-shielding films that is narrower than the light-shielding film, and the thin-line-like gap is formed radially around the light-receiving surface.
本発明は受光面の外側に、受光面を中心に放射状に遮光
膜が形成されているめ、受光面以外に、遮光膜間の細線
状の隙間にも受光感度があり、この受光感度をもつ部分
が受光面までの道しるべとなるので、この道しるべとな
る部分に光が入射するように光ファイバー等を結合さ
せ、後はこの道しるべに沿って光ファイバーを移動させ
ればよいので、フォトダイオードと発光素子又は光ファ
イバーとの光結合を簡単に行うことができる。According to the present invention, since the light-shielding film is formed radially outside the light-receiving surface with the light-receiving surface as the center, there is light-receiving sensitivity in the thin line-shaped gaps between the light-shielding films in addition to the light-receiving surface. Since the part serves as a guide to the light receiving surface, it is only necessary to combine optical fibers etc. so that light enters the part that serves as a guide and then move the optical fiber along this guide. Alternatively, optical coupling with an optical fiber can be easily performed.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の平面図であり、第２図は第
１図のＡ−Ａ′線断面図である。半導体基体１の一部に
不純物拡散により導電型を変えた領域６を設けてpn接合
10を形成する。このpn接合10のある領域を受光面２と
し、この受光面２とそれ以外の半導体基体表面に透過性
の絶縁膜（SiO2膜）３を作製し、受光面２の外周にそっ
て絶縁膜３の一部にリング状に穴をあけ、電極４を形成
する。電極４の外の絶縁膜３の上全面にAlを蒸着後、受
光面２を中心に放射状に、Al膜を除去して遮光膜５を作
る。発光素子などから出射された光は、フォトダイオー
ドの表面のどこかに入射される。フォトダイオードの表
面はどの部分にも受光感度を有する部分があるので、受
光電流が流れる。この点でフォトダイオードをXYZ方向
に移動させ、その点で受光電流が最大となるようにし、
入射光をフォトダイオード表面に集光させる。その点か
らさらに受光電流が減少しないようにフォトダイオード
をXY方向に移動させると受光感度を有する部分が受光面
２の方に向いているので受光面２まで動くようになる。1 is a plan view of an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA 'in FIG. A pn junction is formed by providing a region 6 of which conductivity type is changed by impurity diffusion in a part of the semiconductor substrate 1.
Forming 10. A region having the pn junction 10 is used as a light receiving surface 2, and a transparent insulating film (SiO 2 film) 3 is formed on the light receiving surface 2 and the surface of the semiconductor substrate other than the light receiving surface 2, and the insulating film is formed along the outer periphery of the light receiving surface 2. A ring-shaped hole is made in a part of 3 to form the electrode 4. After Al is vapor-deposited on the entire surface of the insulating film 3 outside the electrodes 4, the Al film is removed radially around the light-receiving surface 2 to form the light-shielding film 5. The light emitted from the light emitting element or the like enters somewhere on the surface of the photodiode. Since the surface of the photodiode has a portion having light receiving sensitivity in every portion, a light receiving current flows. At this point, move the photodiode in the XYZ directions so that the received light current becomes maximum at that point,
The incident light is focused on the photodiode surface. From that point, when the photodiode is moved in the XY directions so that the light receiving current does not decrease further, the portion having light receiving sensitivity is directed toward the light receiving surface 2 and thus moves to the light receiving surface 2.
尚、実施例では半導体基体は１つの半導体から成ってい
るが、半導体基板の上にエピタキシャル層を設けた半導
体基体とし、このエピタキシャル層にpn接合を形成した
フォトダイオードとしてもよい。Although the semiconductor substrate is made of one semiconductor in the embodiment, it may be a semiconductor substrate in which an epitaxial layer is provided on the semiconductor substrate and a pn junction is formed in this epitaxial layer.
以上説明したように本発明は、フォトダイオードの受光
面以外の絶縁膜上に、受光面を中心として放射状に遮光
膜を形成することによりフォトダイオードと発光素子又
は光ファイバーとの光結合を簡単に行うことができる。As described above, the present invention easily performs optical coupling between the photodiode and the light emitting element or the optical fiber by forming the light shielding film radially on the insulating film other than the light receiving surface of the photodiode with the light receiving surface as the center. be able to.
第１図は本発明のフォトダイオードの平面図で第２図は
第１図のＡ−Ａ′線断面図、第３図は従来のフォトダイ
オードの平面図で第４図は第３図のＢ−Ｂ′線断面図で
ある。 1,11……半導体基体、2,12……受光面、3,13……透過性
絶縁膜、4,14……電極、5,15……遮光膜、10……pn接
合。FIG. 1 is a plan view of a photodiode of the present invention. FIG. 2 is a sectional view taken along the line AA 'of FIG. 1, FIG. 3 is a plan view of a conventional photodiode, and FIG. 4 is B of FIG. It is a B-B 'line sectional view. 1,11 …… Semiconductor substrate, 2,12 …… Light receiving surface, 3,13 …… Transparent insulation film, 4,14 …… Electrode, 5,15 …… Shading film, 10 …… pn junction.
Claims (1)
る領域を受光面とした半導体の表面上に設けた透過性絶
縁膜上に、受光面を取り巻いて受光面を中心として、放
射状に遮光膜を形成し、遮光膜間の間隙を、前記遮光膜
に比して幅が狭い細線状で、かつ、受光面を中心とした
放射状に形成した構造を有することを特徴とするフォト
ダイオード。1. A semiconductor having a pn junction, and a light receiving surface surrounding a light receiving surface on a transparent insulating film provided on a surface of a semiconductor having a region having the pn junction as a light receiving surface. A photo having a structure in which light-shielding films are radially formed, and a gap between the light-shielding films is formed in a thin line shape having a width narrower than that of the light-shielding film and radially with the light receiving surface as a center. diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63086422A JPH07101756B2 (en) | 1988-04-07 | 1988-04-07 | Photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63086422A JPH07101756B2 (en) | 1988-04-07 | 1988-04-07 | Photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01257377A JPH01257377A (en) | 1989-10-13 |
| JPH07101756B2 true JPH07101756B2 (en) | 1995-11-01 |
Family
ID=13886453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63086422A Expired - Lifetime JPH07101756B2 (en) | 1988-04-07 | 1988-04-07 | Photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07101756B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714773A (en) * | 1996-10-15 | 1998-02-03 | Lucent Technologies Inc. | Photodiode array for remotely powered lightwave networks |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106342A (en) * | 1987-10-19 | 1989-04-24 | Victor Co Of Japan Ltd | Photo-detecting head chip |
-
1988
- 1988-04-07 JP JP63086422A patent/JPH07101756B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01257377A (en) | 1989-10-13 |
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