JPH07104594B2 - Photolithographic mask and method of manufacturing the same - Google Patents
Photolithographic mask and method of manufacturing the sameInfo
- Publication number
- JPH07104594B2 JPH07104594B2 JP28313486A JP28313486A JPH07104594B2 JP H07104594 B2 JPH07104594 B2 JP H07104594B2 JP 28313486 A JP28313486 A JP 28313486A JP 28313486 A JP28313486 A JP 28313486A JP H07104594 B2 JPH07104594 B2 JP H07104594B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- light
- film
- fine particles
- photolithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010419 fine particle Substances 0.000 claims description 32
- 238000000206 photolithography Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 238000006116 polymerization reaction Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 229920006254 polymer film Polymers 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 11
- 210000001747 pupil Anatomy 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 108010038447 Chromogranin A Proteins 0.000 description 1
- 102100031186 Chromogranin-A Human genes 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- CPTIBDHUFVHUJK-NZYDNVMFSA-N mitopodozide Chemical compound C1([C@@H]2C3=CC=4OCOC=4C=C3[C@H](O)[C@@H](CO)[C@@H]2C(=O)NNCC)=CC(OC)=C(OC)C(OC)=C1 CPTIBDHUFVHUJK-NZYDNVMFSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体微細加工プロセス中で、半加工基板上
に次加工工程のパターンを形成するための光リソグラフ
ィー用マスクの構造及びその製造方法に関する。The present invention relates to a structure of a photolithography mask for forming a pattern of a next processing step on a semi-processed substrate in a semiconductor fine processing process, and a manufacturing method thereof. Regarding
特に、露光光源にエキシマーレーザ光等の干渉性の光源
を用いる場合のマスクの構造及びその製造方法に関す
る。In particular, the present invention relates to a mask structure and a manufacturing method thereof when an interfering light source such as excimer laser light is used as an exposure light source.
（従来の技術） 露光光源にエキシマーレーザ光を用いる場合、従来はマ
スク基板として249nmの光を透過する石英ガラスを用い
るほかは、通常の光リソグラフィー用マスクと同じ構造
のものが用いられていた。(Prior Art) When an excimer laser beam is used as an exposure light source, conventionally, a mask having the same structure as a normal photolithography mask is used except that quartz glass that transmits light of 249 nm is used as a mask substrate.
しかしながら、エキシマーレーザ光のようなコヒーレン
スの高いレーザ光源を用いては、投影レンズの開口数NA
を十分に利用して、その理想結像の高い解像度を実現す
ることはできない。However, when using a laser light source with high coherence such as excimer laser light, the numerical aperture NA of the projection lens is
Cannot be fully utilized to achieve the high resolution of the ideal image formation.
そこで、投影レンズのNAは第６図の投影露光装置におい
て、NA＝sinθbと定義され、解像度Δは、Δ＝0.5（λ/
NA）と定義される。ここで、θbは投影レンズ40の像側
（ウエハ側）のひとみ角の半分（第６図参照）、λは使
用波長を表す。しかしながら、使用光源のコヒーレンス
が高い場合には、ウエハ50上にスペックルパターンが発
生すること並びに投影レンズ40の開口数を十分利用し得
ないため、上記理想結像の解像度を実現することはでき
ない。そのため、レーザ光を部分的拡散光源に変えるた
めの何らかの手段が露光装置中に用いられている。エキ
シマーレーザに於いては使用波長λに幅があるために、
スペックルパターンは消失するが、投影レンズ40の開口
数の全部を満たす方向の入射光を作る手段が必要となっ
てくる。Therefore, the NA of the projection lens is defined as NA = sin θ b in the projection exposure apparatus of FIG. 6, and the resolution Δ is Δ = 0.5 (λ /
NA) is defined. Here, θ b represents half the pupil angle of the projection lens 40 on the image side (wafer side) (see FIG. 6), and λ represents the wavelength used. However, when the coherence of the light source used is high, the speckle pattern is generated on the wafer 50 and the numerical aperture of the projection lens 40 cannot be fully utilized, so that the resolution of the ideal image formation cannot be realized. . Therefore, some means for converting the laser light into a partially diffused light source is used in the exposure apparatus. In the excimer laser, since the wavelength λ used is wide,
Although the speckle pattern disappears, a means for producing incident light in a direction that fills the entire numerical aperture of the projection lens 40 becomes necessary.
その第１のものは、集束レーザ光の結像点を投影レンズ
の入射ひとみ面上とし、この結像点をこのひとみ面内で
高速走査する方法である。なお、この種の技術として、
例えば、『エス・ピー・アイ・イー，第633巻、「光マ
イクロリソグラフィーＶ」（1986）第６〜16頁』（SPIE
Vol.633 Optical Microlithography V）が挙げられ
る。The first one is a method in which the image forming point of the focused laser beam is set on the entrance pupil plane of the projection lens, and this image forming point is scanned at high speed within this pupil plane. In addition, as this kind of technology,
For example, “SP I E, Vol. 633,“ Optical Microlithography V ”(1986) pages 6 to 16” (SPIE
Vol.633 Optical Microlithography V).
第２のものは、光源とマスクの間に拡散板を挿入する方
法であり、この種の技術として、例えば、特開昭61−17
7422号が挙げられる。The second is a method of inserting a diffusion plate between the light source and the mask, and as a technique of this type, for example, Japanese Patent Laid-Open No. 61-17
7422 is mentioned.
（発明が解決しようとする問題点） しかしながら、上記第１のレーザ走査光源を用いる方法
の場合、瞬間時点においては、コヒーレンス光源特有の
回折成分が理想的なパターン像の透光部分に発生する。
そして、この回折成分は光源走査によって、そのパワー
成分が平均化されるものの、積算化されて大きなバック
グラウンド露光となってしまう。(Problems to be Solved by the Invention) However, in the case of the method using the first laser scanning light source, a diffractive component peculiar to the coherence light source is generated at the light transmitting portion of the ideal pattern image at the moment.
Then, although the power component of the diffracted component is averaged by scanning the light source, the diffracted component is integrated and becomes a large background exposure.
また、上記第２の光源とマスクの間に拡散板を挿入する
方法においては、マスク面内の光束分布を一様にするこ
とと、投影レンズの物体側のひとみ角内の光束分布を一
様にすることを同時に実現するには工夫を要するなどの
問題点があった。Further, in the method of inserting the diffusion plate between the second light source and the mask, the light flux distribution in the mask plane is made uniform, and the light flux distribution in the pupil angle on the object side of the projection lens is made uniform. However, there is a problem in that it is necessary to devise a method to realize both of the above.
本発明は、これら従来技術の問題点を解決するためにな
されたもので、レーザ光を部分的拡散光源に変えるため
の手段を露光装置中に設けるのではなく、マスク自身の
中に組み込むことによって、この問題点を解決したもの
である。The present invention has been made to solve these problems of the prior art. By incorporating a means for changing a laser beam into a partially diffused light source in an exposure apparatus, it is built in the mask itself. , Is a solution to this problem.
従って、本発明の目的は、コヒーレンスの高いレーザ光
源を用いて、高い解像度を得ることができ、しかも投影
レンズの必要なひとみ角内に最も効率よくレーザ光源の
エネルギーを入射させることができる光リソグラフィー
用マスクとその製造方法を提供することである。Therefore, an object of the present invention is to use a laser source having a high coherence to obtain a high resolution, and moreover, to enable the energy of the laser source to be most efficiently incident within the necessary pupil angle of the projection lens. A mask for manufacturing and a manufacturing method thereof.
（問題点を解決するための手段） 本発明の光リソグラフィー用マスクは、第１図におい
て、ガラス基板１上に形成された光吸収性膜３を有し、
この光吸収性膜３はマスクパターンに加工される。光吸
収性膜３の開口部3aには光拡散性膜２が設けられてい
る。このマスクを製造するには、第３図に示されるよう
に、ガラス基板１を蒸発源６をもつプラズマ重合装置４
内に装着して、ガラス基板１上にプラズマ重合によって
高分子膜を形成しながら、蒸発源６より微粒子の原材料
を蒸発させて、高分子膜中に微粒子を分散させた光拡散
性膜２を形成した後、光拡散性膜２上に光吸収性膜３を
形成して、次に光吸収性膜３をマスクパターンに加工す
る。(Means for Solving Problems) The photolithographic mask of the present invention has a light absorbing film 3 formed on a glass substrate 1 in FIG.
This light absorbing film 3 is processed into a mask pattern. The light diffusing film 2 is provided in the opening 3a of the light absorbing film 3. To manufacture this mask, as shown in FIG. 3, the glass substrate 1 is provided with a plasma polymerization apparatus 4 having an evaporation source 6.
It is mounted inside and a raw material of fine particles is evaporated from an evaporation source 6 while forming a polymer film on a glass substrate 1 by plasma polymerization, and a light diffusing film 2 in which fine particles are dispersed in the polymer film is formed. After the formation, the light absorbing film 3 is formed on the light diffusing film 2, and then the light absorbing film 3 is processed into a mask pattern.
（作用） 本発明によれば、上記のように構成されるので、第１図
に示されるマスクに入射するコヒーレンスの高いレーザ
光は、光拡散性膜２によって拡散されるので、光吸収性
膜３の開口部3aに２次光源が形成されたのと同じことに
なる。そのため、マスクの結像位置にはスペックルパタ
ーンが発生しない。そして、光拡散性膜２によって拡散
される光の主要部が投影レンズのひとみ角内に入るの
で、最大の効率で結像が行われる。(Operation) According to the present invention, since it is configured as described above, the laser light having a high coherence incident on the mask shown in FIG. 1 is diffused by the light diffusing film 2, so that the light absorbing film is formed. This is the same as when the secondary light source is formed in the opening 3a of No. 3. Therefore, the speckle pattern does not occur at the image forming position of the mask. Then, since the main part of the light diffused by the light diffusing film 2 falls within the pupil angle of the projection lens, image formation is performed with maximum efficiency.
（実施例） 以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, the Example of this invention is described in detail, referring drawings.
第１図は本発明の第１実施例を示す光リソグラフィー用
マスクの断面図、第２図は本発明の第２実施例を示す光
リソグラフィー用マスクの断面図である。FIG. 1 is a sectional view of an optical lithography mask showing a first embodiment of the present invention, and FIG. 2 is a sectional view of an optical lithography mask showing a second embodiment of the present invention.
これらの図に示されるように、本発明の光リソグラフィ
ー用マスクは、ガラス基板１上に設けられた光透過部
（開口部）3aと、光吸収部3bとからなるマスクパターン
に加工された光吸収性膜３（多くはクローム膜）からな
る。As shown in these figures, the mask for photolithography of the present invention has a light processed into a mask pattern including a light transmitting portion (opening) 3a provided on the glass substrate 1 and a light absorbing portion 3b. It consists of an absorbent membrane 3 (mostly a chrome membrane).
そして、マスクパターンの光透過部3aは光拡散性膜２で
埋められている。光透過部3aを光拡散性膜２で埋めるた
めの構造として、第１図に示すものはガラス基板１と光
吸収性膜３との間に、一様に光拡散性膜２を設けてあ
る。第２図に示すものは、光吸収性膜３の上に光拡散性
膜２を設けたものである。そして、これらの光拡散性膜
２は、例えば、高分子膜からなる光透過性誘電体マトリ
ックス内に、非反応性の金属又はマトリックスの屈折率
と異なる屈折率を有する誘電体の微粒子であって、レー
ザ光の波長λに比べて十分に小さい径を有する微粒子を
分散させたものである。The light transmitting portion 3a of the mask pattern is filled with the light diffusing film 2. As a structure for filling the light transmitting portion 3a with the light diffusing film 2, the structure shown in FIG. 1 has the light diffusing film 2 provided uniformly between the glass substrate 1 and the light absorbing film 3. . As shown in FIG. 2, the light diffusing film 2 is provided on the light absorbing film 3. These light diffusing films 2 are, for example, fine particles of a dielectric material having a refractive index different from that of a non-reactive metal or matrix in a light transmitting dielectric matrix made of a polymer film. The fine particles having a diameter sufficiently smaller than the wavelength λ of the laser light are dispersed.
ところで、第６図において、投影レンズ40の物体側のひ
とみ角の半分をθa、像側のひとみ角の半分をθb、物体
距離をａ、像距離をｂ、結像倍率を1/Mとすると、 1/M＝b/a＝cotθb/cotθa ≒θa／θb となる。ところで、NA≒θbであることから、θa≒NA/M
である。そして、理想的結像の場合、マスク30から投影
レンズ40に入る光の入射角の範囲は、このひとみ角の半
分θa以上でなければならず、入射角の範囲が丁度θaに
等しい場合、光源の効率は最大となる。By the way, in FIG. 6, half the pupil angle on the object side of the projection lens 40 is θ a , half the pupil angle on the image side is θ b , the object distance is a, the image distance is b, and the imaging magnification is 1 / M. When, the 1 / M = b / a = cotθ b / cotθ a ≒ θ a / θ b. By the way, since NA ≈ θ b , θ a ≈ NA / M
Is. Then, in the case of ideal image formation, the range of the incident angle of the light entering the projection lens 40 from the mask 30 must be equal to or more than half the pupil angle θ a , and the range of the incident angle is just equal to θ a. , The efficiency of the light source is maximized.
光拡散性膜２内の微粒子間の平均距離をｄとした時、マ
スク30から拡散される光の主要部の拡散角は、第７図に
示すように、相互間の距離ｄの微粒子からの１次の回折
光の回折光角θと等しいと考えられる。第７図におい
て、光路差ｌはｌ＝d sinθ＝λであるから、主要部の
光の拡散角θはθ≒λ/dである。そして、上記したよう
に、θ＝θaの時、即ち、拡散光の主要な部分が投影レ
ンズ40のひとみ角内に丁度入る時、光源の効率は最大と
なるから、光透過性誘電体マトリックス内に分散した微
粒子間の平均距離ｄが、ｄ＝λ／θa＝λM/NAになるよ
うに、光拡散性膜２を製作することが必要である。Assuming that the average distance between the fine particles in the light diffusing film 2 is d, the diffusion angle of the main part of the light diffused from the mask 30 is as shown in FIG. It is considered to be equal to the diffracted light angle θ of the first-order diffracted light. In FIG. 7, since the optical path difference 1 is l = d sin θ = λ, the light diffusion angle θ of the main part is θ≈λ / d. Then, as described above, when θ = θ a , that is, when the main part of the diffused light is just within the pupil angle of the projection lens 40, the efficiency of the light source is maximum, and therefore the light transmissive dielectric matrix is obtained. It is necessary to manufacture the light diffusing film 2 so that the average distance d between the fine particles dispersed therein is d = λ / θ a = λM / NA.
上記のように、光透過性誘電体マトリックス中に分散さ
れた微粒子の径が、レーザ光の波長に比べて十分に小さ
く、かつ、微粒子間の平均距離ｄが上記条件を満足する
ような光拡散性膜２を製造するには、ガラス基板１をプ
ラズマ重合反応槽中におき、この上にプラズマ重合膜を
堆積させると同時に、この反応槽中に非反応性の金属蒸
気又は非反応性の誘電体蒸気を発生させることによっ
て、非反応性の金属又は非反応性の誘電体がクラスター
微粒子として、上記プラズマ重合膜中に分散収蔵される
という方法が適している。As described above, the diameter of the fine particles dispersed in the light-transmitting dielectric matrix is sufficiently smaller than the wavelength of the laser light, and the light diffusion is such that the average distance d between the fine particles satisfies the above condition. In order to manufacture the reactive film 2, the glass substrate 1 is placed in a plasma polymerization reaction tank, and a plasma polymerization film is deposited on the glass substrate 1 while at the same time, a non-reactive metal vapor or a non-reactive dielectric film is placed in the reaction tank. A method is suitable in which a non-reactive metal or a non-reactive dielectric is dispersed and stored in the plasma polymerized film as cluster fine particles by generating body vapor.
第３図にこの方法を実施するためのプラズマ重合反応槽
４の概略を示す。この反応槽４は排気系８によって高真
空にされている。高周波発生装置９に接続されたプラズ
マ発生部５には、バルブ14を経てキャリアガスのアルゴ
ン10が導入され、このプラズマ発生部５でプラズマ化さ
れたキャリアガスは下方へ流れる。この下流には、例え
ば、スチレンやメタクリル酸メチル等のモノマー12を導
入するノズル11が配置されているので、モノマー12を同
時に導入すると、プラズマ重合された、例えば、スチレ
ンやメタクリル酸メチル等の高分子膜が支持台７上に取
り付けられたガラス基板１の表面に堆積される。FIG. 3 schematically shows a plasma polymerization reaction tank 4 for carrying out this method. The reaction tank 4 is evacuated to a high vacuum by an exhaust system 8. Into the plasma generator 5 connected to the high-frequency generator 9, a carrier gas of argon 10 is introduced through a valve 14, and the carrier gas plasmatized in the plasma generator 5 flows downward. Downstream of this, for example, a nozzle 11 for introducing a monomer 12 such as styrene or methyl methacrylate is arranged. Therefore, when the monomer 12 is introduced at the same time, plasma polymerization, for example, a high concentration of styrene or methyl methacrylate is performed. A molecular film is deposited on the surface of the glass substrate 1 mounted on the support 7.
この堆積の過程で、加熱電源15に接続された加熱炉６中
の非反応性の金属、例えば、Au又は誘電体、例えば、酸
化錫からなる物質13を加熱蒸発させると、堆積されるプ
ラズマ重合高分子膜中にこの物質13のクラスター微粒子
が分散する。微粒子間の平均距離ｄは、この蒸発速度を
調整することによって制御できる。In the course of this deposition, when the non-reactive metal in the heating furnace 6 connected to the heating power source 15 such as Au or a dielectric material such as tin oxide 13 is evaporated by heating, plasma polymerization is deposited. The cluster particles of the substance 13 are dispersed in the polymer film. The average distance d between the fine particles can be controlled by adjusting the evaporation rate.
次に、本発明の光リソグラフィー用マスクの製造方法を
第４図及び第５図を用いて説明する。Next, a method for manufacturing the photolithographic mask of the present invention will be described with reference to FIGS. 4 and 5.
第４図は第１図に示すタイプのマスクを製造する時の工
程を示す断面図である。FIG. 4 is a cross-sectional view showing a process of manufacturing a mask of the type shown in FIG.
まず、第４図（ａ）に示すようなガラス基板１上に、第
３図において説明したプラズマ重合反応槽４を用いて、
第４図（ｂ）に示すように光拡散性膜２を所要の厚さ、
例えば、薄い場合、３〜４μｍ堆積させる。なお、この
光拡散性膜２の膜厚は金属の粒径が小さい場合は厚くす
る必要があり、逆に金属の粒径が大きい場合は薄くて済
むことになる。First, on the glass substrate 1 as shown in FIG. 4 (a), the plasma polymerization reaction tank 4 described in FIG. 3 is used,
As shown in FIG. 4 (b), the light diffusing film 2 has a required thickness,
For example, when it is thin, it is deposited to 3 to 4 μm. The film thickness of the light diffusing film 2 needs to be thick when the particle size of the metal is small, and conversely, it can be thin when the particle size of the metal is large.
因に、金属は容量％でモノマー中に、例えば、５〜50％
分散させる。For example, the metal may be contained in the monomer in volume%, for example, 5 to 50%.
Disperse.
次いで、第４図（ｃ）に示すように、その上に、例え
ば、クローム膜からなる光吸収性膜３を堆積させる。Then, as shown in FIG. 4 (c), a light absorbing film 3 made of, for example, a chrome film is deposited thereon.
なお、第４図（ｂ）と（ｃ）の工程はプラズマ重合反応
槽４中で引き続いて行ってもよい。その場合、第４図
（ｃ）の工程においては、プラズマ発生部５の動作は中
止する。そして、光吸収性膜３の材料と光拡散性膜２の
微粒子の材料とは同じものであってもよく、また、微粒
子の材料として別の種類の金属又は誘電体を用いる場合
には、第３図のプラズマ重合反応槽４の中にもう１つ別
の加熱炉を設け、この中に微粒子の原材料を入れ、加熱
蒸発させればよい。The steps shown in FIGS. 4B and 4C may be successively performed in the plasma polymerization reaction tank 4. In that case, in the step of FIG. 4 (c), the operation of the plasma generator 5 is stopped. Then, the material of the light absorbing film 3 and the material of the fine particles of the light diffusing film 2 may be the same, and when another kind of metal or dielectric is used as the material of the fine particles, It suffices to provide another heating furnace in the plasma polymerization reaction tank 4 in FIG.
次に、第４図（ｄ）に示すように、常法に従ってレジス
ト膜20を塗布して、その上に通常の電子ビームパターン
創生器又は光パターン創生器を用いてマスクパターンを
焼き付ける。Next, as shown in FIG. 4 (d), a resist film 20 is applied according to a conventional method, and a mask pattern is printed thereon by using a usual electron beam pattern generator or optical pattern generator.
次に、第４図（ｅ）に示すように、レジスト膜20を現像
して、残ったレジスト膜20をマスクとして光吸収性膜３
をエッチングする。Next, as shown in FIG. 4 (e), the resist film 20 is developed, and the remaining resist film 20 is used as a mask to form the light absorbing film 3
To etch.
最後に、第４図（ｆ）に示すように、レジスト膜20を除
去することによって、第１図に示すタイプのマスクを得
ることができる。Finally, as shown in FIG. 4 (f), the resist film 20 is removed to obtain a mask of the type shown in FIG.
次に、第５図は第２図に示すタイプのマスクを製造する
場合を示すもので、第５図（ａ）〜（ｅ）の工程はガラ
ス基板１上に光吸収性膜３からなるマスクパターンを設
ける通常のマスク製造工程の一例を示すもので、第４図
を参照すればその内容は明らかであるからその説明は省
略する。Next, FIG. 5 shows a case where a mask of the type shown in FIG. 2 is manufactured. The steps of FIGS. 5 (a) to 5 (e) are masks made of the light absorbing film 3 on the glass substrate 1. This figure shows an example of a normal mask manufacturing process in which a pattern is provided. Since the content is clear with reference to FIG. 4, its explanation is omitted.
このようにして、第５図（ａ）〜（ｅ）の工程によって
得られたマスクを、第３図に示したプラズマ重合反応槽
４の支持台に取り付けて、その上に前記と同様にして光
拡散性膜２を堆積させると、第５図（ｆ）に示されるよ
うに、第２図に示すタイプのマスクを得ることができ
る。In this way, the mask obtained by the steps of FIGS. 5 (a) to 5 (e) is attached to the support base of the plasma polymerization reaction tank 4 shown in FIG. When the light diffusing film 2 is deposited, a mask of the type shown in FIG. 2 can be obtained as shown in FIG. 5 (f).
なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。The present invention is not limited to the above embodiment,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（発明の効果） 以上、詳細に説明したように、本発明によれば、透光性
基板とこの上に形成されたマスクパターンに加工された
光吸収性膜とからなる光リソグラフィー用マスクにおい
て、前記マスクパターンに加工された光吸収性膜の開口
部に高分子膜内に微粒子を分散してなる光拡散性膜を設
けるようにしたので、結像理論上、物体面の位置に理想
に近い２次光源が実現されることになり、最良の解像度
が得られる。本発明によって実現される光拡散性マスク
においては、各方向の散乱成分の作る像は振幅成分にお
いて平均化されるので、遮光部分でゼロに近い値をと
り、理想的回折光学の結像が実現される。(Effects of the Invention) As described in detail above, according to the present invention, in a mask for photolithography comprising a light-transmissive substrate and a light-absorptive film processed into a mask pattern formed thereon, Since the light-diffusing film formed by dispersing fine particles in the polymer film is provided in the opening of the light-absorbing film processed into the mask pattern, it is close to the ideal position on the object plane in the theory of imaging. A secondary light source will be realized and the best resolution will be obtained. In the light diffusive mask realized by the present invention, the image formed by the scattered component in each direction is averaged in the amplitude component, so that the light-shielding portion has a value close to zero and ideal diffractive optical imaging is realized. To be done.
また、本発明で実現されるマスクを用いる時、マスク面
内の光束分布だけを一様にすることによって、投影レン
ズ固有の収差分布を別にして、マスク像面全体にわたっ
て一様な露光量で一様な解像性のパターン像を得ること
ができる。Further, when the mask realized by the present invention is used, by making only the light flux distribution in the mask surface uniform, the aberration distribution peculiar to the projection lens is separated and the exposure amount is uniform over the entire mask image surface. A pattern image with uniform resolution can be obtained.
更に、本発明によれば、従来の光リソグラフィーシステ
ムに比べて、その構成が極めて簡素化され、コンパクト
な光リソグラフィーシステムを構築することができる。Further, according to the present invention, compared with the conventional optical lithography system, the configuration is extremely simplified, and a compact optical lithography system can be constructed.
また、光リソグラフィー用マスクの製造方法として、 （Ａ）透光性基板を蒸発源をもつプラズマ重合装置内に
装着して、前記透光性基板上にプラズマ重合によって高
分子膜を形成しながら、前記蒸発源より微粒子の原材料
を蒸発させて、前記高分子膜中に微粒子を分散させた光
拡散性膜を形成した後、前記光拡散性膜上に光吸収性膜
を形成し、次に前記光拡散性膜を残しこの光吸収性膜の
みをマスクパターンに加工する。In addition, as a method for manufacturing a mask for photolithography, (A) a transparent substrate is mounted in a plasma polymerization apparatus having an evaporation source, and a polymer film is formed on the transparent substrate by plasma polymerization, After the fine particle raw material is evaporated from the evaporation source to form a light diffusing film in which fine particles are dispersed in the polymer film, a light absorbing film is formed on the light diffusing film, and then the light absorbing film is formed. The light diffusing film is left and only this light absorbing film is processed into a mask pattern.
（Ｂ）透光性基板上に光吸収性膜を形成し、この光吸収
性膜をマスクパターンに加工した後、上記透光性基板を
蒸発源をもつプラズマ重合装置内に装着して、前記光吸
収性膜上にプラズマ重合によって高分子膜を形成しなが
ら、前記蒸発源より微粒子の原材料を蒸発させて、前記
高分子膜中に微粒子を分散させた高拡散性膜を形成す
る。(B) A light absorbing film is formed on a light transmitting substrate, the light absorbing film is processed into a mask pattern, and then the light transmitting substrate is mounted in a plasma polymerization apparatus having an evaporation source, While forming a polymer film on the light-absorbing film by plasma polymerization, the fine particle raw material is evaporated from the evaporation source to form a highly diffusible film in which the fine particles are dispersed in the polymer film.
このように構成したので、簡単なプロセスでもって上記
マスクを製造することができる。また、その製造装置も
安価なもので済ませることができる。With this structure, the mask can be manufactured by a simple process. Also, the manufacturing apparatus can be inexpensive.
第１図は本発明の第１実施例を示す光リソグラフィー用
マスクの断面図、第２図は本発明の第２実施例を示す光
リソグラフィー用マスクの断面図、第３図は本発明の光
リソグラフィー用マスクの製造に用いるプラズマ重合槽
の概略図、第４図は第１図に示すタイプのマスクの製造
工程断面図、第５図は第２図に示すタイプのマスクの製
造工程断面図、第６図は露光装置の結像原理の説明図、
第７図は微粒子による拡散角の説明図である。 １…ガラス基板、２…光拡散性膜、３…光吸収性膜、3a
…光透過部、3b…光吸収部、４…プラズマ重合反応槽、
５…プラズマ発生部、６…加熱炉、７…支持台、８…排
気系、９…高周波発生装置、10…アルゴン、11…ノズ
ル、12…モノマー、13…物質、14…バルブ、15…加熱電
源、20…レジスト膜、30…マスク、40…投影レンズ、50
…ウエハ。FIG. 1 is a sectional view of an optical lithography mask showing a first embodiment of the present invention, FIG. 2 is a sectional view of an optical lithography mask showing a second embodiment of the present invention, and FIG. FIG. 4 is a schematic view of a plasma polymerization tank used for manufacturing a mask for lithography, FIG. 4 is a sectional view of a manufacturing process of a mask of the type shown in FIG. 1, and FIG. 5 is a sectional view of a manufacturing process of a mask of the type shown in FIG. FIG. 6 is an explanatory view of the imaging principle of the exposure apparatus,
FIG. 7 is an explanatory diagram of a diffusion angle due to fine particles. 1 ... Glass substrate, 2 ... Light diffusing film, 3 ... Light absorbing film, 3a
... light transmitting part, 3b ... light absorbing part, 4 ... plasma polymerization reaction tank,
5 ... Plasma generating part, 6 ... Heating furnace, 7 ... Supporting table, 8 ... Exhaust system, 9 ... High frequency generator, 10 ... Argon, 11 ... Nozzle, 12 ... Monomer, 13 ... Material, 14 ... Valve, 15 ... Heating Power supply, 20 ... Resist film, 30 ... Mask, 40 ... Projection lens, 50
... wafer.
Claims (11)
れマスクパターンに加工された光吸収性膜を有する光リ
ソグラフィー用マスクにおいて、前記マスクパターンに
加工された光吸収性膜の開口部に高分子膜内に微粒子を
分散してなる光拡散性膜を設けたことを特徴とする光リ
ソグラフィー用マスク。1. A photolithography mask comprising a light-transmissive substrate and a light-absorptive film formed above the light-transmissive substrate and processed into a mask pattern, wherein the light-absorptive film processed into the mask pattern is formed. A mask for photolithography, comprising a light diffusing film having fine particles dispersed in a polymer film in the opening.
フィー用マスクの露光装置の使用波長をλ、この露光装
置の投影レンズの開口数をNA、結像倍率を1/Mとする
時、 ｄ＝λM/NA を満足することを特徴とする特許請求の範囲第１項記載
の光リソグラフィー用マスク。2. When d is an average distance between fine particles, λ is a wavelength used in an exposure apparatus of this photolithography mask, NA is a numerical aperture of a projection lens of this exposure apparatus, and an imaging magnification is 1 / M, The mask for photolithography according to claim 1, wherein d = λM / NA is satisfied.
とを特徴とする特許請求の範囲第１項又は第２項記載の
光リソグラフィー用マスク。3. The mask for photolithography according to claim 1 or 2, wherein the fine particles are non-reactive metal fine particles.
ことを特徴とする特許請求の範囲第１項又は第２項記載
の光リソグラフィー用マスク。4. The mask for photolithography according to claim 1 or 2, wherein the fine particles are non-reactive dielectric fine particles.
置内に装着して、前記透光性基板上にプラズマ重合によ
って高分子膜を形成しながら、前記蒸発源より微粒子の
原材料を蒸発させて、前記高分子膜中に微粒子を分散さ
せた光拡散性膜を形成した後、前記光拡散性膜上に光吸
収性膜を形成し、次に前記光拡散性膜を残し前記光吸収
性膜のみをマスクパターンに加工することを特徴とする
光リソグラフィー用マスクの製造方法。5. A transparent substrate is mounted in a plasma polymerization apparatus having an evaporation source, and a raw material of fine particles is evaporated from the evaporation source while forming a polymer film on the transparent substrate by plasma polymerization. Then, after forming a light diffusing film in which fine particles are dispersed in the polymer film, a light absorbing film is formed on the light diffusing film, and then the light diffusing film is left and the light absorbing film is formed. A process for producing a mask for photolithography, which comprises processing only a transparent film into a mask pattern.
用いることを特徴とする特許請求の範囲第５項記載の光
リソグラフィー用マスクの製造方法。6. The method for producing a mask for photolithography according to claim 5, wherein a non-reactive metal is used as a raw material of the fine particles.
を用いることを特徴とする特許請求の範囲第５項記載の
光リソグラフィー用マスクの製造方法。7. The method for producing a mask for photolithography according to claim 5, wherein a non-reactive dielectric is used as a raw material of the fine particles.
プラズマ重合装置内で光吸収性膜を形成することを特徴
とする特許請求の範囲第５項から第７項のいずれかに記
載の光リソグラフィー用マスクの製造方法。8. The light-absorbing film is formed in the same plasma polymerization apparatus subsequent to the formation of the light-diffusing film, according to any one of claims 5 to 7. Of manufacturing a mask for photolithography.
吸収性膜をマスクパターンに加工した後、前記透光性基
板を蒸発源をもつプラズマ重合装置内に装着して、前記
光吸収性膜上にプラズマ重合によって高分子膜を形成し
ながら、前記蒸発源より微粒子の原材料を蒸発させて、
前記高分子膜中に微粒子を分散させた光拡散性膜を形成
することを特徴とする光リソグラフィー用マスクの製造
方法。9. A light absorbing film is formed on a transparent substrate, the light absorbing film is processed into a mask pattern, and then the transparent substrate is mounted in a plasma polymerization apparatus having an evaporation source. While forming a polymer film on the light-absorbing film by plasma polymerization, the fine particle raw material is evaporated from the evaporation source,
A method for producing a mask for photolithography, comprising forming a light diffusing film in which fine particles are dispersed in the polymer film.
を用いることを特徴とする特許請求の範囲第９項記載の
光リソグラフィー用マスクの製造方法。10. The method of manufacturing a mask for photolithography according to claim 9, wherein a non-reactive metal is used as a raw material of the fine particles.
体を用いることを特徴とする特許請求の範囲第９項記載
の光リソグラフィー用マスクの製造方法。11. The method for producing a mask for photolithography according to claim 9, wherein a non-reactive dielectric is used as a raw material of the fine particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28313486A JPH07104594B2 (en) | 1986-11-29 | 1986-11-29 | Photolithographic mask and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28313486A JPH07104594B2 (en) | 1986-11-29 | 1986-11-29 | Photolithographic mask and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137231A JPS63137231A (en) | 1988-06-09 |
| JPH07104594B2 true JPH07104594B2 (en) | 1995-11-13 |
Family
ID=17661666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28313486A Expired - Lifetime JPH07104594B2 (en) | 1986-11-29 | 1986-11-29 | Photolithographic mask and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07104594B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001255660A (en) * | 2000-03-10 | 2001-09-21 | Ricoh Opt Ind Co Ltd | Generation method for special, surface shape and optical element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56159338U (en) * | 1980-04-28 | 1981-11-27 | ||
| JPS59193455A (en) * | 1983-04-18 | 1984-11-02 | Shuzo Hattori | Manufacture of mask for x-ray lithography |
| JPS6167857A (en) * | 1984-09-12 | 1986-04-08 | Shuzo Hattori | Production of masked substrate for x-ray lithography |
-
1986
- 1986-11-29 JP JP28313486A patent/JPH07104594B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63137231A (en) | 1988-06-09 |
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