JPH07107900B2 - Manufacturing method of semiconductor device having patterned semiconductor region - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a patterned semiconductor region on its surface side from a semiconductor substrate.

2. Description of the Related Art Conventionally, as a method of manufacturing a semiconductor device having a patterned semiconductor region on its surface side from a semiconductor substrate, a mask material layer made of a resist sensitive to an electron beam or an ion beam is formed on the semiconductor substrate, A latent image having a desired pattern is formed on the mask material layer by an electron beam or ion beam drawing process on the mask material layer, and a pattern is formed on the mask material layer by a developing process on the mask material layer on which the latent image is formed. Forming a patterned semiconductor layer, and then forming a patterned semiconductor region on the surface side of the semiconductor substrate by etching the semiconductor substrate using the patterned mask layer as a mask, for example, by using reactive ions. And a method of manufacturing a semiconductor device having a desired patterned semiconductor region (this is a first manufacturing method). Called) is proposed.

According to the first conventional manufacturing method as described above, the patterned mask layer is formed based on the electron beam or ion beam drawing process on the mask material layer, so that the patterned mask layer is finely formed. Therefore, the patterned semiconductor region can be formed finely.

Further, conventionally, as a method of forming a patterned semiconductor region on the surface side of a semiconductor substrate, a depiction etching process using an ion beam is performed on the semiconductor substrate without forming a patterned mask layer on the semiconductor substrate. ,
Immediately, by performing, to form a patterned semiconductor region on the surface side of the semiconductor substrate, having a step,
A method of manufacturing a semiconductor device having a desired patterned semiconductor region (this is called a second manufacturing method) has also been proposed.

According to the second conventional manufacturing method as described above, the patterned semiconductor region is formed by the depiction etching process using the ion beam. Therefore, the patterned semiconductor region is the same as in the first conventional manufacturing method described above. In addition, it can be finely formed. Further, since it is not necessary to form the patterned mask layer on the semiconductor substrate, it is possible to easily form the patterned mask layer as compared with the above-described first conventional manufacturing method.

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the case of the above-described first conventional manufacturing method, the patterned semiconductor region is formed by the etching process for masking the patterned mask layer on the semiconductor substrate. Is formed in the region of the surface of the semiconductor substrate in which the patterned semiconductor region is not formed, leaving a defect, and since the defect is connected to the patterned semiconductor region, the patterned semiconductor region is
It has the drawback that it cannot be formed as having the desired properties.

Further, because of the above-mentioned defects, even if the semiconductor layer is not formed on the semiconductor substrate after the patterned semiconductor region is formed on the surface side of the semiconductor substrate, the semiconductor layer is not formed. Can not be formed as having good crystallinity, and therefore, the patterned semiconductor region is deteriorated from the desired characteristics,
It had a drawback.

Further, in the case of the above-described second conventional manufacturing method, the patterned semiconductor region is formed by the depiction etching process using the ion beam on the semiconductor substrate, and therefore, similarly to the case of the above-described first conventional manufacturing method. , The patterned semiconductor region is formed on the surface of the semiconductor substrate in a region where the patterned semiconductor region is not formed, leaving a defect, and therefore, the patterned semiconductor region is formed in the same manner as in the case of the above-described first conventional manufacturing method. The semiconductor region cannot be formed with desired properties, or the semiconductor layer cannot be formed on the semiconductor substrate with the patterned semiconductor region embedded therein as having good crystallinity. However, the patterned semiconductor region has a drawback that it deteriorates from the desired characteristics, and it is relatively difficult to form the patterned semiconductor region. It has had a disadvantage, such as requiring a time.

By the means for solving the problems, the present invention proposes a method for manufacturing a semiconductor device having a novel patterned semiconductor region, which does not have the above-mentioned drawbacks.

A method of manufacturing a semiconductor device having a patterned semiconductor region according to the first invention of the present application includes the following sequential steps to manufacture a semiconductor device having a desired patterned semiconductor region.

That is, a mask material layer made of a material that sublimes at a temperature higher than the surface side of the semiconductor substrate is formed to a thickness of 10 atomic layers or less.

Next, a patterned mask layer having a thickness of 10 atomic layers or less is formed from the mask material layer by etching the mask material layer with an ion beam.

Next, a patterned semiconductor region is formed on the front surface side of the semiconductor substrate by sublimation treatment of the semiconductor substrate using the patterned mask layer as a mask.

The method for manufacturing a semiconductor device having a patterned semiconductor region according to the second invention of the present application is the same as the method of manufacturing a semiconductor device having a patterned semiconductor region according to the first invention of the present application, after the patterned semiconductor region is formed. , The step of forming a semiconductor layer in a state in which the patterned semiconductor region is embedded on the semiconductor substrate on which the patterned semiconductor region is formed, without exposing it to the outside air, A semiconductor device having a semiconductor region is manufactured.

According to the method of manufacturing a semiconductor device having a patterned semiconductor region according to the first invention of the present application and the second invention of the present application,
Since the patterned mask layer is formed by the depiction etching process using an ion beam, the patterned mask layer can be formed finely, and thus the patterned semiconductor region can be formed finely.

Further, according to the method of manufacturing a semiconductor device having a patterned semiconductor region according to the first invention of the present application and the second invention of the present application, the patterned semiconductor region is subjected to sublimation treatment using the patterned mask layer for the semiconductor substrate as a mask. Since it is formed, the patterned semiconductor region can be formed without substantially leaving a defect in a region of the surface of the semiconductor substrate where the patterned semiconductor region is not formed.
Therefore, the patterned semiconductor region can be easily formed as having the desired characteristics.

Further, according to the method for manufacturing the semiconductor device having the patterned semiconductor region according to the first invention and the second invention of the present application, the patterned semiconductor region is formed by sublimation, so that the patterned semiconductor region can be formed in a short time. It can be easily formed.

Further, according to the method for manufacturing a semiconductor device having a patterned semiconductor region according to the first invention of the present application, after the patterned semiconductor region is formed on the front surface side of the semiconductor substrate, the semiconductor layer is patterned on the semiconductor substrate. Even if the semiconductor layer is not formed in a state in which the semiconductor layer is embedded, the semiconductor layer can be easily formed as one having good crystallinity, and thus, the semiconductor layer is thus formed on the semiconductor substrate. Even if a layer is formed, the patterned semiconductor region does not become a patterned semiconductor region which is deteriorated due to its intended characteristics.

Further, according to the method of manufacturing a semiconductor device having a patterned semiconductor region according to the second aspect of the present invention, the patterned semiconductor region has substantially no defect in a region of the surface of the semiconductor substrate where the patterned semiconductor region is not formed. Since it can be formed without leaving, the semiconductor layer formed in a state where the patterned semiconductor region is embedded on the semiconductor substrate can be easily formed as one having good crystallinity, In addition, the formation of this semiconductor layer does not cause the patterned semiconductor region to deteriorate from its intended characteristics.

Example 1 Next, with reference to FIG. 1, a first example of a method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention will be described.

For example, a semiconductor substrate body 2 made of single crystal GaAs, and formed on the semiconductor substrate body 2 by an epitaxial growth method, for example, single crystal Al _x Ga _1-x As (where 0 <x <1)
A semiconductor substrate 1 composed of a semiconductor layer 3 made of, and a semiconductor layer 4 formed on the semiconductor layer 3 by an epitaxial growth method to a thickness of, for example, 10 nm and made of, for example, single crystal GaAs. (Fig. 1A).

Next, the semiconductor layer 4 is formed on the semiconductor layer 4 of the semiconductor substrate 1.
The mask material layer 5 which is sublimated at a higher temperature than that of, and is made of, for example, single crystal AlAs is formed by a known epitaxial growth method, and is relatively thin, for example, 3 to 10 atomic layers, for example, 1.5 n.
By forming to a thickness of m, on the semiconductor substrate 1,
A mask material layer 5 that sublimes at a higher temperature than the surface side is formed (FIG. 1B). In this case, in order to prevent the surface of the mask material layer 5 made of single crystal AlAs from being unnecessarily oxidized at the time of forming the patterned mask layer 15 described later, on the mask material layer 5, for example, single crystal GaAs is used. The semiconductor layer 6 to be formed is formed to a relatively thin thickness of, for example, 1.5 nm by an epitaxial growth method.

Next, with respect to the semiconductor layer 6 and the mask material layer 5, for example, 60
A patterned mask layer 15 is formed from the mask material layer 5 and a pattern is formed from the semiconductor layer 6 by a drawing etching process using a Ga ion beam 7 having a beam diameter of nm and heated to, for example, 40 KV. A patterned semiconductor layer 16 is formed on the patterned mask layer 15 (FIG. 1C). In this case, the surface side of the semiconductor layer 4 of the semiconductor substrate 1 may be etched by the ion beam 7.

Next, a sublimation process using the patterned mask layer 15 as a mask for the semiconductor layer 4 of the semiconductor substrate 1 will be described later.
A semiconductor crystal growth apparatus used to form 18 is used, and the inside of the chamber is set to, for example, 10 ⁻⁶ to 10 ^−6.
In an AS atmosphere having a pressure of ¹⁷ Torr, the semiconductor substrate 1 is heated to, for example, 750 ° C., which is a temperature of 720 ° C. or higher, which is sufficient to sublimate the semiconductor layer 4 but not the patterned mask layer 15. The semiconductor layer 4
To form a patterned semiconductor region 14 which is a region below the patterned mask layer 15, so that the surface of the semiconductor substrate 1 is patterned by a sublimation process using the patterned mask layer 15 as a mask. The semiconductor plate 11 forming the semiconductor region 14 is obtained (FIG. 1D).
In this case, the patterned semiconductor layer 16 on the patterned mask layer 15 sublimes from the patterned mask layer 15.

Next, a semiconductor layer 18 made of, for example, the same single crystal Al _x Ga _{1 -x} As as the semiconductor layer 2 of the semiconductor substrate 11 is formed on the semiconductor substrate 11, and the semiconductor substrate 11 is formed with the patterned semiconductor region 15 described above. After that, the semiconductor crystal growth apparatus described above is used without taking it out of the semiconductor crystal growth apparatus used during its formation, and thus without exposing the semiconductor substrate 11 to the outside air. The patterned semiconductor region 14 is formed together with the patterned mask layer 15 by the epitaxial growth method (1st step).
(Figure E).

The first embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention includes the above steps to manufacture a semiconductor device having a desired patterned semiconductor region.

According to the first embodiment of the method for manufacturing a semiconductor device having such a patterned semiconductor region, the patterned mask layer 15
Is formed by a drawing etching process using the ion beam 8, so that the patterned mask layer 15 can be formed finely, and when a plurality of patterned mask layers 15 are formed adjacent to each other, the plurality of patterns can be formed. The masking mask layer can be formed with a high density at adjacent intervals that are approximately the same as the beam diameter of the ion beam 8 (for example, 60 nm), and thus the patterned semiconductor regions 14 can be formed finely. At the same time, when a plurality of patterned semiconductor regions 14 are formed adjacent to each other, the plurality of patterned semiconductor regions 14 can be formed at high density.

Further, according to the first embodiment of the method of manufacturing the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 is formed into the patterned mask layer for the semiconductor layer 4 of the semiconductor substrate 1. Since it is formed by the sublimation process using 15 masks, its patterned semiconductor region
14 is formed on the surface of the semiconductor substrate 11 in a region where the patterned semiconductor region 14 is not formed (the surface region of the semiconductor layer 3 other than below the patterned semiconductor region 14) without substantially leaving defects. be able to. Therefore, it is possible to easily form the patterned semiconductor region 14 having the desired characteristics.

Further, according to the first embodiment of the method of manufacturing the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 is formed by sublimation. It can be easily formed in a short time.

Further, according to the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned mask layer 15 has a thickness of 10 atomic thickness or less, that is, an extremely thin thickness of 3 nm or less. However, since the patterned semiconductor region 14 can be formed from the semiconductor layer 4 using the patterned mask layer 15 as a mask, the mask material layer 5 has a thickness of 10 atomic layers or less, that is, 3 nm or less. By forming it to an extremely thin thickness,
The patterned mask layer 15 can be formed finer and with higher precision, and thus the patterned semiconductor region 14 can be formed finer and with higher precision.

Furthermore, according to the first embodiment of the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 is formed on the surface of the semiconductor substrate 11 as described above. Since it can be formed substantially without leaving a defect in the region where the patterned semiconductor region 14 is not formed, the semiconductor layer 18 formed in the state where the patterned semiconductor region 14 on the semiconductor substrate 11 is embedded is formed. ,
It can be easily formed to have good crystallinity, and the formation of the semiconductor layer does not cause the patterned semiconductor region 14 to deteriorate from its intended characteristics.

Further, according to the first embodiment of the method of manufacturing the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 is provided on the surface side of the semiconductor substrate 1 in the chamber of the semiconductor crystal growth device. Formed in, then,
Since the semiconductor layer 18 is formed on the semiconductor substrate 11 in the same chamber of the semiconductor crystal growth apparatus without exposing the semiconductor substrate 11 to the outside air, the patterned semiconductor region 14 is formed when the semiconductor layer 18 is formed. Substrate including the side surface of
On the entire outer surface of 11, a substantially unnecessary oxide layer is formed, or since it does not cause defects, it is possible to form the semiconductor layer 18 as having good crystallinity, The patterned semiconductor region 14 does not deteriorate from its intended properties.

Further, according to the first embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 and the semiconductor layer 18 are formed as described above. Of the patterned semiconductor region 14 and the semiconductor layer 18 so as to have only a very thin transition region such as one atomic layer order thickness between them. Of course, it is possible to form the semiconductor layer 4 on the semiconductor layer 3 without defects and to have good crystallinity without defects, as a matter of course.
Similarly, the mask material layer 5 can be formed on the semiconductor layer 4 in a state where it does not cause defects and has good crystallinity without defects, and therefore, the semiconductor regions 3 and the patterns thereof can be formed. The patterned semiconductor region 14 and the patterned mask layer are used as the semiconductor region 3 and the patterned semiconductor region.
14 and the patterned semiconductor region 14 and the patterned mask layer 15 can be formed with only a transition region having an extremely thin thickness, so that the patterned semiconductor region 14
Can be formed so as to exhibit photoluminescence characteristics with a narrow half width.

Further, according to the first embodiment of the method of manufacturing the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIG. 1, the patterned semiconductor region 14 is formed as having no defects as described above. Therefore, by using the patterned semiconductor region 14, a semiconductor laser having a low threshold value of 1 mA or less and a transistor having a high carrier mobility of 106 cm −2 / V · S or less,
It can be manufactured as a semiconductor device.

Second Embodiment Next, a second embodiment of the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention will be described with reference to FIG.

2, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

The second embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention shown in FIG. 2 is the first embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. In the example, the semiconductor substrate 1 does not have the semiconductor layer 3 but has the semiconductor substrate body 2 and the semiconductor layer 4 instead of having the semiconductor substrate body 2, the semiconductor layer 3, and the semiconductor layer 4. However, the semiconductor substrate body 2 sublimates at a higher temperature than the semiconductor layer 4, for example, single crystal AlGa
And a method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. 1, except that the semiconductor layer 18 is directly formed on the semiconductor substrate body 2 in accordance with As. A semiconductor device having a target patterned semiconductor region is manufactured by the same method.

The above is the second embodiment of the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention.

According to the second embodiment of the method for manufacturing a semiconductor device having the patterned semiconductor region according to the present invention, it is possible to obtain the patterned semiconductor region according to the present invention described above with reference to FIG. 1 except for the matters described above. Since the manufacturing method of the semiconductor device has the same as that of the first embodiment, the detailed description is omitted.
The same excellent actions and effects as in the case of the first embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above are obtained.

Third Embodiment Next, with reference to FIG. 3, a third embodiment of a method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention will be described.

In FIG. 3, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

The third embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention shown in FIG. 3 is the first embodiment of the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG. In the example, instead of having the semiconductor substrate 1 having the semiconductor substrate body 2, the semiconductor layer 3 and the semiconductor layer 4, the semiconductor substrate 1 is made up of the semiconductor substrate body 2 without the semiconductor layers 3 and 4, and accordingly, As described above with reference to FIG. 1, except that the mask material layer 5 and the patterned mask layer 15 are formed directly on the semiconductor substrate body 2 and the semiconductor layer 18 is formed directly on the semiconductor substrate body 2. A semiconductor device having a desired patterned semiconductor region is manufactured by a method similar to the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention.

The above is the third embodiment of the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention.

According to the third embodiment of the manufacture of the semiconductor device having the patterned semiconductor region according to the present invention, it is possible to obtain the patterned semiconductor region according to the present invention described in FIG. 1 except for the matters described above. Since the semiconductor device is the same as the first embodiment of the semiconductor device, detailed description thereof will be omitted, but it is the same as that of the first embodiment of the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIG. Excellent action and effect can be obtained.

In the above description, the patterned mask layer 15 is formed from the mask material layer 5 by using Ga ion beam, but when the mask material layer 5 is formed to a thin thickness of 3 nm or less. The patterned mask layer 15 is formed finer and more densely using an ion beam of He capable of making the beam diameter a small value of 10 nm or less,
Therefore, the patterned semiconductor region 14 can be formed finer and with higher density.

Further, in the manufacturing method of the semiconductor device having the patterned semiconductor region according to the present invention described above with reference to FIGS. 1 and 2, the case where the semiconductor layer 4 in the semiconductor substrate 1 is GaAs and the mask material layer 5 is AlAs has been described. But the semiconductor layer 4 is
InAs, which has a pressure of ^-6 to 10 ^-7 Torr, is assumed to be InAs that sublimes at a temperature of about 700 ° C or higher, while the mask material layer 5 sublimes only at a higher temperature than InAs under the same conditions.
The semiconductor layer 4 is made of AlAs, and the semiconductor layer 4 is made of 10 ⁻⁶ to 10 −10.
^It shall be made of InP that sublimes at a temperature of approximately 650 ° C or higher in a P atmosphere having a pressure of ^-7 Torr, while the mask material layer 5 should be made of AlP that sublimes only at a higher temperature than InP under the same conditions. It is also possible to obtain the same action and effect as described above.

In addition, in the method of manufacturing a semiconductor device having a patterned semiconductor region according to the present invention described above with reference to FIG.
Although the semiconductor substrate body 2 constituting the above is made of GaAs and the mask material layer 5 is made of AlAs, the semiconductor substrate body 2 is made of InAs described above, while the mask material layer 5 is made of Alternatively, the semiconductor substrate body 2 may be made of InP as described above, and the mask material layer 5 may be made of AlP as described above, so that the same action and effect as described above can be obtained. .

Further, in the above description, the patterned mask layer is formed from the mask material layer 5 with the semiconductor layer 6 formed thereon.
15 is formed, and at the same time, the patterned semiconductor layer 16 is formed from the semiconductor layer 6, and the patterned mask 16 is formed on the patterned mask layer 15. The case where the patterned semiconductor region 14 is formed from the semiconductor layer 4 using the layer 15 as a mask has been described, but from the mask material layer 5 to the patterned mask layer 15
When forming the patterned mask layer 15, if the surface of the patterned mask layer 15 is formed in an atmosphere having a sufficiently high degree of vacuum that the surface of the patterned mask layer 15 is not unnecessarily oxidized, the surface of the patterned mask layer 15 is Since the semiconductor layer 6 is not unnecessarily oxidized, the formation of the semiconductor layer 6 on the mask material layer 5 is omitted, and the patterned semiconductor layer 16 is patterned from the semiconductor layer 4 in the state where the patterned semiconductor layer 16 is not present in the patterned mask layer 15. The semiconductor region 14 can also be formed.

Further, in the above description, the semiconductor layer is formed on the semiconductor substrate 1.
Although the case of forming 18 has been described, in some cases, the semiconductor layer 18
It is also possible to manufacture the semiconductor device having the desired patterned semiconductor region by omitting the step of forming the above, and other various modifications and alterations can be made without departing from the spirit of the present invention. .

[Brief description of drawings]

1A to 1E are schematic cross-sectional views in sequential steps showing a first embodiment of a method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention. 2A to 2E are schematic cross-sectional views in sequential steps showing a second embodiment of the method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention. 3A to 3E are schematic cross-sectional views in sequential steps showing a third embodiment of a method for manufacturing a semiconductor device having a patterned semiconductor region according to the present invention. 1 ... Semiconductor substrate 2 ... Semiconductor substrate body 3 ... Semiconductor layer 4 ... Semiconductor layer 5 ... Mask material layer 6 ... Semiconductor layer 7 ... Ion beam 11 ... Semiconductor substrate 14 ... Patterned semiconductor region 15 ...... Patterned mask layer 16 …… Patterned semiconductor layer 18 …… Semiconductor layer

Claims (9)

[Claims] 1. A step of forming, on a surface of a semiconductor substrate, a mask material layer made of a material that sublimes at a temperature higher than that of the surface side, to a thin thickness of 1 atomic layer or less, and the mask material layer. Forming a patterned mask layer having a thin thickness of 10 atomic layers or less from the mask material layer by a depiction etching process using an ion beam; and using the patterned mask layer for the semiconductor substrate as a mask And a step of forming a patterned semiconductor region on the front surface side of the semiconductor substrate by a sublimation treatment, the method for manufacturing a semiconductor device having a patterned semiconductor region. 2. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 1, wherein the semiconductor substrate comprises a semiconductor substrate body, a first semiconductor layer, and the first semiconductor layer. A second semiconductor layer that sublimes at a relatively low temperature, and in the step of forming the mask material layer, the mask material layer is formed on the second semiconductor layer to form the patterned semiconductor region. The method of manufacturing a semiconductor device having a patterned semiconductor region, comprising forming the patterned semiconductor region from the second semiconductor layer in the step of. 3. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 1, wherein the semiconductor substrate sublimates at a temperature lower than that of the semiconductor substrate main body. In the step of forming the mask material layer, the mask material layer is formed on the first semiconductor layer, and the patterned semiconductor region is formed in the step of forming the mask material layer. A method of manufacturing a patterned semiconductor region, wherein the region is formed from the first semiconductor layer. 4. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 1, wherein the semiconductor substrate is a semiconductor substrate body, and the mask material layer is formed in the step of forming the mask material layer. Forming a layer on the semiconductor substrate body and forming the patterned semiconductor region, the patterned semiconductor region is formed on the front surface side of the semiconductor substrate body. Manufacturing method of semiconductor device. 5. A step of forming, on a semiconductor substrate, a mask material layer made of a material that sublimes at a temperature higher than that of the surface side thereof so as to have a thin thickness of 10 atomic layers or less, and an ion beam for the mask material layer. Forming a patterned mask layer having a thin thickness of 10 atomic layers or less from the mask material layer by a depiction etching process using, and a sublimation process using the patterned mask layer as a mask for the semiconductor substrate. The step of forming a patterned semiconductor region on the surface side of the semiconductor substrate, and a semiconductor layer on the semiconductor substrate forming the patterned semiconductor region without exposing it to the outside air,
And a step of forming the patterned semiconductor region in a buried state, the method for manufacturing a semiconductor device having a patterned semiconductor region. 6. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 5, wherein the semiconductor substrate comprises a semiconductor substrate body, a first semiconductor layer, and the first semiconductor layer. A second semiconductor layer that sublimes at a relatively low temperature, and in the step of forming the mask material layer, the mask material layer is formed on the second semiconductor layer to form the patterned semiconductor region. In the step of forming the patterned semiconductor region from the second semiconductor layer, and in the step of forming a semiconductor layer formed in a state where the patterned semiconductor region is embedded, 1. A method of manufacturing a semiconductor device having a patterned semiconductor region, which is characterized in that the semiconductor device is formed on one semiconductor layer. 7. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 5, wherein the semiconductor substrate sublimates at a temperature lower than that of the semiconductor substrate body. In the step of forming the mask material layer, the mask material layer is formed on the first semiconductor layer, and the patterned semiconductor region is formed in the step of forming the mask material layer. Forming a region from the first semiconductor layer and forming a semiconductor layer in a state where the patterned semiconductor region is buried, forming the semiconductor layer on the semiconductor substrate body; A method of making a featured patterned semiconductor region. 8. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 5, wherein the semiconductor substrate is a semiconductor substrate body, and the mask material layer is formed in the step of forming the mask material layer. In the step of forming a layer on the semiconductor substrate body and forming the patterned semiconductor region, the patterned semiconductor region is formed on the front surface side of the semiconductor substrate body, and the patterned semiconductor region is embedded. A method of manufacturing a semiconductor device having a patterned semiconductor region, wherein the semiconductor layer is formed on the semiconductor substrate body in the step of forming a formed semiconductor layer. 9. A method of manufacturing a semiconductor device having a patterned semiconductor region according to claim 5, wherein in the step of forming the patterned semiconductor region, a chamber in which a semiconductor substrate is arranged is provided, and the chamber is provided. Using the semiconductor crystal growth apparatus adapted to heat the semiconductor substrate disposed in the chamber and to form a semiconductor layer on the semiconductor substrate disposed in the chamber, In the step of forming a semiconductor layer which is formed in a chamber of a crystal growth apparatus and in which the patterned semiconductor region is embedded, the semiconductor substrate is formed into the patterned semiconductor region and then the semiconductor crystal is formed. Without taking it out of the chamber of the growth apparatus, the semiconductor layer is used in the chamber by using the semiconductor crystal growth apparatus. Preparation of a semiconductor device having a patterned semiconductor region, characterized by forming.