JPH07107963B2 - Monolithic microwave IC - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a monolithic microwave IC.

(Prior Art) In recent years, the demand for microwave devices has rapidly increased due to the progress of technologies such as SHF band satellite broadcasting, radar, and microwave communication. In order to meet this demand and enable mass production, there is an urgent need to develop a so-called monolithic microwave IC in which a microwave circuit is integrated in one semiconductor chip, and the development is being carried out in various places.

FIG. 4 is a plan view showing an example of a conventional monolithic microwave IC.

Conventionally, as shown in FIG. 4, an FE having a drain 3, a source 2 and a gate 4 on one main surface of a semi-insulating semiconductor chip 1
An input / output matching circuit composed of T (field effect transistor) and the microstrip lines 7 and 8 is formed, and the tips of the strip lines 7 and 8 are connected to the grounding bonding pads 9 and 10 via the capacitors 11 and 12, respectively. It is connected. 5 and 6 constitute the input terminal and the output terminal, respectively.

In such a conventional monolithic microwave IC, if the bandwidth shifts for some reason, it is extremely difficult and practically impossible to adjust by processing such as disconnection / connection of the microstrip lines 7 and 8. Therefore, a new mask was manufactured and the shape of the microstrip lines 7 and 8 was changed to correct the characteristics.

(Problems of Prior Art) In order to manufacture such a monolithic microwave IC,
The mask must be manufactured and the IC process must be carried out, which takes at least 3 months. For this reason, there is a problem that even if a deviation of a band, which often occurs in a monolithic microwave IC, occurs, it takes at least three months to correct the deviation and the manufacturing yield of the product is lowered.

(Object of the Invention) An object of the present invention is to improve the manufacturing yield of a product by eliminating the above-mentioned problems, even in the case where a shift in a band or the like occurs, it can be easily corrected in a short period of time. It is to provide a monolithic microwave IC that can.

(Structure of the Invention) According to the present invention, a microstrip line having a conductor portion formed in parallel with one side of a semiconductor chip, and a plurality of predetermined grounds of the conductor portion arranged in proximity to the one side. The same number of grounding bonding pads as the plurality of grounding pads respectively formed corresponding to the candidate points, and the grounding bonding pads facing the grounding candidate points are respectively connected to each other by microwaves. A monolithic microwave IC having the same number of capacitors as the plurality of capacitors is obtained.

(Example) Hereinafter, the Example of this invention is described with reference to drawings.

FIG. 1 is a plan view showing one embodiment of the present invention, FIG. 2 and FIG.
(A)-(d) is the equivalent circuit diagram.

In FIG. 1, this embodiment shows a semi-insulating semiconductor chip.
A drain 13, a source 12, and a gate 14 are provided on one main surface of 11.
An input / output matching circuit composed of a FET and microstrip lines 17 and 18 is formed. A part of the microstrip lines 17 and 18 is provided in parallel with the corresponding side of the semiconductor chip 11, and the strip line 17 A plurality of capacitors 25, 26, 27 and 28 between the conductors of 18 and 18 and a plurality of ground bonding pads 19, 20, 21 and 22, 23, 24 provided close to the sides of the semiconductor chip 11. , 29,30 are provided. 15 and 16 are an input terminal and an output terminal, respectively.

The equivalent circuit of this embodiment is shown in FIG.
In the figure, reference numerals are the same as those in FIG. The portion surrounded by the broken line means the inside of the semiconductor chip 11. In this figure, the bonding pads 19, 23 and the source 12 are grounded using bonding lines 31, 32, 33 respectively. The capacitors 25 to 30 have sufficiently low reactance in the microwave band.

3 (a) to 3 (d) are enlarged equivalent circuit diagrams of the strip line 17 of FIG. 1 and are for explaining the circuit modification in this embodiment. FIG. 3 (a) is equivalent to FIG. 3 (b) when the bonding pad 21 is grounded.
It is expressed as. In this case, the strip line 17 is in the shortest state, and the tip is grounded by microwave. On the other hand, FIG. 7C shows the case where the bonding pad 19 is grounded and is equivalently expressed as shown in FIG. In this case, the strip line 17 is microwaved at its tip in the longest state.

That is, according to this embodiment, the circuit can be easily modified by simply rebonding.

(Effects of the Invention) As described in detail above, the monolithic microwave IC of the present invention has the above-mentioned configuration, and the effective length of the microstrip line can be changed only by changing the bonding pad to be grounded. It has an effect that it can be carried out extremely easily in a short time and the production yield of the product can be greatly improved.

[Brief description of drawings]

FIG. 1 is a plan view showing one embodiment of the present invention, FIG. 2 and FIG.
(A) to (d) are equivalent circuit diagrams thereof, and FIG. 4 is a plan view showing an example of a conventional monolithic microwave IC. 11 …… Semiconductor chip, 12 …… Source, 13 …… Drain,
14 …… Gate, 15 …… Input terminal, 16 …… Output terminal, 17,1
8 ... Microstrip line, 19-24 ... bonding pad, 25-30 ... capacitor, 31-33 ... bonding line.

Claims (1)

[Claims] 1. A microstrip line having a conductor portion formed in parallel with one side of a semiconductor chip, and a plurality of predetermined grounding candidate points of the conductor portion which are arranged close to the one side. The plurality of ground bonding pads, each of which is formed in the same number as the plurality of ground bonding pads, and each of the ground bonding pads facing the conductor portion of each of the ground candidate points, which are connected in a microwave manner. A monolithic microwave IC, which is provided with the same number of capacitors as the number of capacitors.