JPH07109372B2 - Drift correction device in measurement system - Google Patents
Drift correction device in measurement systemInfo
- Publication number
- JPH07109372B2 JPH07109372B2 JP12314489A JP12314489A JPH07109372B2 JP H07109372 B2 JPH07109372 B2 JP H07109372B2 JP 12314489 A JP12314489 A JP 12314489A JP 12314489 A JP12314489 A JP 12314489A JP H07109372 B2 JPH07109372 B2 JP H07109372B2
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- measurement system
- drift
- pressure sensor
- values
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Testing Or Calibration Of Command Recording Devices (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、例えば、生産ラインなどのように、同一の製
品が多量に流れ、長期に亘って安定した計測が必要され
る場合に好適な測定系におけるドリフト補正装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is suitable when a large amount of the same product flows and stable measurement is required for a long time, such as in a production line. The present invention relates to a drift correction device in a measurement system.
［従来の技術］ 第５図は、従来例の測定系のドリフトを補正する方法を
示す図である。[Prior Art] FIG. 5 is a diagram showing a method for correcting drift of a measurement system of a conventional example.
同図において、12は測定対象の電圧を測定する測定装
置、13は被測定素子、14は測定装置12を適宜校正するた
めの基準として使用される標準サンプル、15は測定対象
を被測定素子13または標準サンプル14のいずれかに切換
えるための切換スイッチである。In the figure, 12 is a measuring device for measuring the voltage of the measurement target, 13 is the device under test, 14 is a standard sample used as a reference for appropriately calibrating the measuring device 12, and 15 is the device under test 13 Alternatively, it is a changeover switch for changing over to one of the standard samples 14.
従来では、測定すべき特性値が予め分かっている標準サ
ンプル14によって、測定装置12を定期的に校正するよう
にしている。Conventionally, the measuring device 12 is regularly calibrated with a standard sample 14 whose characteristic value to be measured is known in advance.
［発明が解決しようとする課題］ しかしながら、このような従来のドリフト補正方法で
は、予め特性値の分かっている標準サンプル14を得るの
が困難であったり、この標準サンプル14の特性が変化し
ないように管理するのが面倒であるなどの難点がある。[Problems to be Solved by the Invention] However, with such a conventional drift correction method, it is difficult to obtain the standard sample 14 whose characteristic value is known in advance, or the characteristic of the standard sample 14 does not change. There are difficulties such as being troublesome to manage.
本発明は、上述の点に鑑みて為されたものであって、測
定系のドリフト量が無視できないような微小な測定量を
計測する場合、標準サンプルによる校正をすることな
く、精度の高い測定が可能なドリフト補正装置を提供す
ることを目的とする。The present invention has been made in view of the above-mentioned points, and when measuring a minute amount of measurement such that the amount of drift of the measurement system cannot be ignored, highly accurate measurement without performing calibration with a standard sample It is an object of the present invention to provide a drift correction device capable of
［課題を解決するための手段］ 本発明は、同一の製品が多量に流れる生産ラインなどの
おける各種の特性の測定では、その値は、基準値（規格
値）を中心としてほぼ正規分布することが殆どであると
いう点に着目してなされたものであり、次のような構成
を有する。[Means for Solving the Problem] In the present invention, in the measurement of various characteristics in a production line in which a large amount of the same product flows, the values are almost normally distributed with a reference value (standard value) as the center. It was made paying attention to the fact that it is almost the case, and has the following configuration.
すなわち、基準値を中心にその値がほぼ正規分布する複
数個の測定対象を測定する測定系において、前記複数個
の測定対象の測定値が順次記憶される記憶手段と、前記
複数個の測定値の平均値を算出する演算手段と、前記平
均値の前記基準値からのずれに基づいて、前記記憶手段
の複数個の測定値を順次補正して出力する補正手段とを
備えている。That is, in a measurement system that measures a plurality of measurement objects whose values are approximately normally distributed around a reference value, a storage unit that sequentially stores the measurement values of the plurality of measurement objects, and the plurality of measurement values. And a correction means for sequentially correcting and outputting a plurality of measured values of the storage means based on the deviation of the average value from the reference value.
［作用］ 上記構成によれば、平均値の基準値からのずれ量を、測
定系のドリフト量として補正手段で補正するので、従来
例のように標準サンプルを必要とせずに、測定系のドリ
フトを補正できることになる。[Operation] According to the above configuration, since the deviation amount of the average value from the reference value is corrected by the correction means as the drift amount of the measurement system, the drift of the measurement system can be eliminated without requiring a standard sample unlike the conventional example. Can be corrected.
［実施例］ 以下、図面によって本発明の実施例について、詳細に説
明する。Embodiments Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は、本発明の一実施例の概略構成図である。FIG. 1 is a schematic configuration diagram of an embodiment of the present invention.
この実施例では、測定対象として、半導体圧力センサ素
子の抵抗ブリッジのオフセット電圧の測定について説明
する。半導体圧力センサ素子では、第２図の等価回路図
に示されるように、ウェハ上に形成された抵抗Ra,Rb,R
c,Rdが、ブリッジ状に接続され、接続点A,C間に外部よ
り直流電圧Ｅが印加されている。In this embodiment, measurement of an offset voltage of a resistance bridge of a semiconductor pressure sensor element will be described as a measurement target. In the semiconductor pressure sensor element, as shown in the equivalent circuit diagram of FIG. 2, resistors Ra, Rb, R formed on the wafer are used.
c and Rd are connected in a bridge shape, and a DC voltage E is externally applied between the connection points A and C.
このような４つの抵抗Ra,Rb,Rc,Rdをもつウェハに、圧
力が加わっていない場合には、接続点B,D間は、ブリッ
ジが平衡状態にあり、出力電圧Ｅ0は、ゼロボルトとな
るように設計されているが、現実には、ウェハプロセス
の諸条件のバラツキによってオフセット電圧が発生する
のが普通である。このオフセット電圧は、ゼロボルトを
中心に、±方向にほぼ正規分布でバラツク傾向がある
が、例えば、ロット単位でバッチ処理される数百個の半
導体圧力センサ素子の平均をとると、その値は、ゼロボ
ルトとなる。When no pressure is applied to the wafer having such four resistances Ra, Rb, Rc, Rd, the bridge is in the equilibrium state between the connection points B and D, and the output voltage E 0 is zero volt. However, in reality, an offset voltage is usually generated due to variations in various conditions of the wafer process. This offset voltage tends to vary in a normal distribution in the ± direction centered on zero volt, but, for example, when the average of several hundred semiconductor pressure sensor elements batch-processed in lot units is taken, the value is It will be zero volts.
第１図を参照して、この実施例のドリフト補正装置１
は、基準値であるゼロボルトを中心にその値がほぼ正規
分布するｎ個（例えば、数百個）の半導体圧力センサ素
子２1,22…２nのオフセット電圧を測定する測定系にお
けるドリフトを補正する装置であり、次のような構成を
有する。Referring to FIG. 1, the drift correction device 1 of this embodiment
Is a drift in a measurement system for measuring the offset voltage of n (for example, several hundred) semiconductor pressure sensor elements 2 1 , 2 2 ... 2 n whose values are substantially normally distributed around a reference value of zero volt. This is a correction device and has the following configuration.
すなわち、ｎ個の半導体圧力センサ素子２1,22…２nを
順次切換えるマルチプレクサ３と、このマルチプレクサ
３を介して接続される半導体圧力センサ素子２1,22……
２nのオフセット電圧を測定する測定部４と、この測定
部４の測定電圧を増幅するアンプ５と、このアンプ５の
出力電圧をサンプリングホールドするサンプリングホー
ルド回路６と、このサンプリングホールド回路６でホー
ルドされた測定電圧をA/D変換するA/D変換回路７と、A/
D変換された測定データを順次記憶するメモリ８と、A/D
変換された測定データに基づいて、ｎ個の半導体圧力セ
ンサ素子２1,22…２nの測定値の平均を算出する演算手
段と、算出された平均値の基準値（ゼロボルト）からの
ずれに基づいて、メモリ８に記憶されたｎ個の測定値を
順次補正して出力する補正手段10と、補正された測定デ
ータをD/A変換するD/A変換回路11とを備えている。That is, the n semiconductor pressure sensor element 2 1, 2 2 ... sequentially switching the multiplexer 3 to 2 n, the semiconductor pressure sensor element 2 1 connected via the multiplexer 3, 2 2 ......
A measuring unit 4 that measures an offset voltage of 2 n , an amplifier 5 that amplifies the measured voltage of the measuring unit 4, a sampling hold circuit 6 that samples and holds the output voltage of the amplifier 5, and a holding unit 6 that holds the sampling voltage. A / D conversion circuit 7 for A / D converting the measured voltage
A memory 8 for sequentially storing D-converted measurement data and an A / D
Calculation means for calculating the average of the measured values of the n semiconductor pressure sensor elements 2 1 , 2 2 ... 2 n based on the converted measurement data, and deviation of the calculated average value from the reference value (zero volt) A correction means 10 for sequentially correcting and outputting the n measurement values stored in the memory 8 based on the above, and a D / A conversion circuit 11 for D / A converting the corrected measurement data.
上記構成を有するドリフト補正装置１では、ｎ個の半導
体圧力センサ素子２1,22…２nのオフセット電圧のヒス
トグラムは、第３図に示されるように、基準値であるゼ
ロボルトを中心に正規分布するという点を利用してドリ
フトの影響を補正するものである。In the drift correction device 1 having the above-described configuration, the histogram of the offset voltage of the n semiconductor pressure sensor elements 2 1 , 2 2 ... 2 n is, as shown in FIG. The effect of drift is corrected by utilizing the fact that it is distributed.
すなわち、演算手段９で算出されるｎ個の半導体圧力セ
ンサ素子２1,22…２nの測定値の平均値は、測定部４、
アンプ５およびサンプリングホールド回路６などの測定
系にドリフトがなければ、本来ゼロボルトになるはずで
ある。しかしながら、実際には、測定系のドリフトによ
り、ｎ個の半導体圧力センサ素子２1,22…２nの測定値
は、第４図の実線のヒストグラムに示されるように、電
圧Ｖを中心とした正規分布となっている。この電圧Ｖ
が、測定系のドリフトの影響によるものであり、この電
圧Ｖは、演算手段９で平均値として算出される。That is, the average value of the measured values of the n semiconductor pressure sensor elements 2 1 , 2 2 ...
If there is no drift in the measurement system such as the amplifier 5 and the sampling and holding circuit 6, it should be zero volt. However, actually, due to the drift of the measurement system, the measured values of the n semiconductor pressure sensor elements 2 1 , 2 2 ... 2 n are centered on the voltage V as shown in the histogram of the solid line in FIG. It has a normal distribution. This voltage V
However, this is due to the influence of the drift of the measurement system, and this voltage V is calculated by the calculating means 9 as an average value.
そこで、補正手段10では、メモリ８に記憶されている各
測定データからこのドリフトに対応する電圧Ｖを減算す
ることにより、ドリフトを補正して順次出力するもので
あり、これによって、ドリフトが補正された各測定デー
タが順次得られることになる。なお、第４図の破線は、
補正された測定データのヒストグラムを示している。Therefore, the correction means 10 corrects the drifts by sequentially subtracting the voltage V corresponding to the drifts from each measurement data stored in the memory 8, and sequentially outputs the drifts. Each measured data will be sequentially obtained. The broken line in FIG.
The histogram of the corrected measurement data is shown.
このようにｎ個の半導体圧力センサ素子２1,22…２nの
オフセット電圧が、基準値であるゼロボルトを中心とし
て正規分布するという点を利用し、ｎ個の測定値の平均
値のゼロボルトからのずれを、測定系のドリフトとして
補正するようにしているので、従来例のように、標準サ
ンプルを用いて校正することなく、精度の高い測定が可
能となる。By utilizing the fact that the offset voltage of the n semiconductor pressure sensor elements 2 1 , 2 2 ... 2 n is normally distributed around the reference value of zero volt, the average value of the n measured values is zero volt. Since the deviation from is corrected as a drift of the measurement system, highly accurate measurement can be performed without calibration using a standard sample as in the conventional example.
上述の実施例では、半導体圧力センサ素子のオフセット
電圧について説明したけれども、本発明はこれに限るも
のではなく、例えば、基準値（規格値）を中心にほぼ正
規分布する電池の起電力の製造ラインにおける測定など
にも同様に適用できるものである。Although the offset voltage of the semiconductor pressure sensor element has been described in the above-described embodiment, the present invention is not limited to this. It can be applied to the measurement in the same way.
［発明の効果］ 以上のように本発明によれば、複数個の測定対象の特性
値が、基準値を中心としてほぼ正規分布するという点を
利用し、複数個の測定値の平均値の前記基準値からのず
れに基づいて、測定系のドリフトを補正するようにして
いるので、従来例のように、標準サンプルを用いて測定
系の校正を行う必要がなくなる。[Effects of the Invention] As described above, according to the present invention, the fact that the characteristic values of a plurality of measurement objects are approximately normally distributed around the reference value is used, and the average value of a plurality of measurement values is Since the drift of the measurement system is corrected based on the deviation from the reference value, it is not necessary to calibrate the measurement system using a standard sample as in the conventional example.
【図面の簡単な説明】 第１図は本発明の一実施例の概略構成図、第２図は半導
体圧力センサ素子の等価回路図、第３図は半導体圧力セ
ンサ素子のオフセット電圧のヒストグラム、第４図は測
定されたオフセット電圧のヒストグラム、第５図は従来
例の構成図である。 ２1,22…２n……半導体圧力センサ素子、８……メモ
リ、９……演算手段、10……補正手段。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic configuration diagram of an embodiment of the present invention, FIG. 2 is an equivalent circuit diagram of a semiconductor pressure sensor element, FIG. 3 is a histogram of offset voltage of the semiconductor pressure sensor element, and FIG. FIG. 4 is a histogram of the measured offset voltage, and FIG. 5 is a configuration diagram of a conventional example. 2 1 , 2 2 ... 2 n ... Semiconductor pressure sensor element, 8 ... Memory, 9 ... Calculation means, 10 ... Correction means.
Claims (1)
複数個の測定対象を測定する測定系において、 前記複数個の測定対象の測定値が順次記憶される記憶手
段と、 前記複数個の測定値の平均値を算出する演算手段と、 前記平均値の前記基準値からのずれに基づいて、前記記
憶手段の複数個の測定値を順次補正して出力する補正手
段とを備えることを特徴とする測定系におけるドリフト
補正装置。1. A measuring system for measuring a plurality of measurement objects, the values of which are substantially normally distributed around a reference value, and a storage means for sequentially storing the measurement values of the plurality of measurement objects; And a correction means for sequentially correcting and outputting a plurality of measurement values of the storage means based on a deviation of the average value from the reference value. A drift correction device in a characteristic measurement system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12314489A JPH07109372B2 (en) | 1989-05-16 | 1989-05-16 | Drift correction device in measurement system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12314489A JPH07109372B2 (en) | 1989-05-16 | 1989-05-16 | Drift correction device in measurement system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02300627A JPH02300627A (en) | 1990-12-12 |
| JPH07109372B2 true JPH07109372B2 (en) | 1995-11-22 |
Family
ID=14853283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12314489A Expired - Lifetime JPH07109372B2 (en) | 1989-05-16 | 1989-05-16 | Drift correction device in measurement system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109372B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12270719B2 (en) * | 2023-04-14 | 2025-04-08 | Honeywell International | Pressure transmitter long-term drift detection and correction |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6230106B1 (en) * | 1999-10-13 | 2001-05-08 | Modulation Instruments | Method of characterizing a device under test |
| GB0416882D0 (en) * | 2004-07-29 | 2004-09-01 | Koninkl Philips Electronics Nv | Mosfet device and related method of operation |
| JP2025110906A (en) * | 2022-06-14 | 2025-07-30 | 日置電機株式会社 | Measurement device, measurement method, and measurement program |
-
1989
- 1989-05-16 JP JP12314489A patent/JPH07109372B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12270719B2 (en) * | 2023-04-14 | 2025-04-08 | Honeywell International | Pressure transmitter long-term drift detection and correction |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02300627A (en) | 1990-12-12 |
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