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JPH07110973B2 - Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density - Google Patents
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JPH07110973B2 - Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density - Google Patents

Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density

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Publication number
JPH07110973B2
JPH07110973B2 JP62055380A JP5538087A JPH07110973B2 JP H07110973 B2 JPH07110973 B2 JP H07110973B2 JP 62055380 A JP62055380 A JP 62055380A JP 5538087 A JP5538087 A JP 5538087A JP H07110973 B2 JPH07110973 B2 JP H07110973B2
Authority
JP
Japan
Prior art keywords
annealing
secondary recrystallization
magnetic flux
flux density
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62055380A
Other languages
Japanese (ja)
Other versions
JPS63223126A (en
Inventor
康成 ▲吉▼冨
健三 岩山
武雄 長島
久信 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP62055380A priority Critical patent/JPH07110973B2/en
Publication of JPS63223126A publication Critical patent/JPS63223126A/en
Publication of JPH07110973B2 publication Critical patent/JPH07110973B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Soft Magnetic Materials (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はトランス等の鉄芯に用いられる高磁束密度一方
向性電磁鋼板の製造方法に関するものである。
The present invention relates to a method for producing a high magnetic flux density unidirectional electrical steel sheet used for an iron core of a transformer or the like.

〔従来の技術〕[Conventional technology]

一方向性電磁鋼板は軟磁性材料として主にトランスその
他の電気機器の鉄芯材料に使用されているもので、磁気
特性として励磁特性と鉄損特性が良好でなくてはならな
い。
The unidirectional electrical steel sheet is mainly used as a soft magnetic material for iron core materials of transformers and other electric devices, and it must have good magnetic excitation characteristics and iron loss characteristics.

この励磁特性を表わす数値として通常B8(磁場の強さ80
0A/mにおける磁束密度)を用い、鉄損特性を表わす数値
としてW17/50(50Hzで1.7Tまで磁化させた時の1kg当り
の鉄損)を用いている。
Normally, B 8 (magnetic field strength 80
The magnetic flux density at 0 A / m) is used, and W 17/50 (iron loss per 1 kg when magnetized to 1.7 T at 50 Hz) is used as a numerical value representing the iron loss characteristics.

この一方向性電磁鋼板は最終仕上焼鈍工程で2次再結晶
現象を起こさせ、鋼板面に{110}面,圧延方向に〈00
1〉軸をもったいわゆるゴス組織を発達させることによ
って得られている。良好な磁気特性を得るためには磁化
容易軸である〈001〉軸を圧延方向に高度に揃える事が
重要である。又板圧,結晶粒度,固有抵抗,表面被膜,
鋼板の純度等も磁気特性に大きな影響を及ぼす。
This unidirectional electrical steel sheet causes a secondary recrystallization phenomenon in the final finishing annealing process, causing the {110} plane on the steel sheet surface and <00} in the rolling direction.
It is obtained by developing a so-called Goss structure with a 1> axis. In order to obtain good magnetic properties, it is important to align the <001> axis, which is the easy axis of magnetization, with a high degree in the rolling direction. Also, plate pressure, grain size, specific resistance, surface coating,
The purity of the steel sheet also has a great influence on the magnetic properties.

方向性については、MnS,A1Nをインヒビターとして利用
する最終強圧下冷間圧延を特徴とする方法によって大幅
に向上し、それに伴って鉄損特性も著しく向上してき
た。
The directionality has been significantly improved by the method characterized by final high-pressure cold rolling using MnS, A1N as an inhibitor, and the iron loss characteristics have also been significantly improved accordingly.

一方近年エネルギー価格の高騰を背景として、トランス
メーカーは低鉄損トランス用素材への指向を一段と強め
ている。低鉄損素材としてアモルファス合金や6.5%Si
鋼等の開発も進められているが、トランス用材料とし工
場的に使用するには解決すべき問題を残している。他方
レーザー等を用いた磁区制御技術が近年開発され、それ
によって鉄損特性が大幅に向上した。また製品の磁束密
度が高いほど磁区制御技術の効果が大きいため、磁束密
度の極めて高い製品を開発する必要性が高まってきた。
On the other hand, in recent years, against the backdrop of soaring energy prices, transformer manufacturers are increasingly focusing on materials for low iron loss transformers. Amorphous alloy or 6.5% Si as low iron loss material
Although steel and other materials are being developed, they still have problems to be solved before they can be used as a transformer material in a factory. On the other hand, magnetic domain control technology using a laser or the like has been developed in recent years, which has significantly improved iron loss characteristics. Further, the higher the magnetic flux density of the product, the greater the effect of the magnetic domain control technology, so that it is necessary to develop a product having an extremely high magnetic flux density.

本発明者らは、含Al一方向性電磁鋼板の製造において、
2次再結晶の開始から完了までの途中段階で焼鈍雰囲気
のN2分圧を増加させることによって磁束密度を高める方
法を提示したが(特願昭61−61993)、工業的に使用す
るには解決すべき問題を残していた。
The present inventors, in the production of Al-containing unidirectional electrical steel sheet,
We proposed a method to increase the magnetic flux density by increasing the N 2 partial pressure in the annealing atmosphere in the intermediate stage from the start to the completion of secondary recrystallization (Japanese Patent Application No. 61-61993). It left a problem to be solved.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

一方向性電磁鋼板を製造する場合、極めて高い磁束密度
をもつ製品を工業的に安定して得ることが難しいという
問題点を解決する方法を提供するものである。
It is intended to provide a method for solving the problem that it is difficult to industrially stably obtain a product having an extremely high magnetic flux density when producing a unidirectional electrical steel sheet.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は最終仕上焼鈍工程に於て、800℃以下での焼鈍
雰囲気での を0.1以下とし、2次再結晶の開始から完了までの途中
段階で焼鈍雰囲気のN2分圧を増加させることによって極
めて磁束密度の高い含Al一方向性電磁鋼板を安定して製
造する方法を提供するものである。以下本発明を詳細に
説明する。
In the final finishing annealing step, the present invention is performed in an annealing atmosphere at 800 ° C or less. To 0.1 or less and increasing the N 2 partial pressure of the annealing atmosphere in the intermediate stage from the start of secondary recrystallization to the completion of the method for stably producing Al-containing unidirectional electrical steel sheet with extremely high magnetic flux density. It is provided. The present invention will be described in detail below.

本発明の対象としている含Al一方向性電磁鋼板の製造に
於ては、従来用いられている製鋼法で得られた溶鋼を連
続鋳造法或いは造塊法で鋳造し、必要に応じて分塊工程
を挟んでスラブを得、ひき続き熱間圧延し、必要に応じ
て熱延板焼鈍を行なった後、1回又は中間焼鈍を挟む2
回以上の冷間圧延により最終ゲージの冷延板を得、次い
で脱炭焼鈍を従来の方法で行なう。
In the production of the Al-containing unidirectional electrical steel sheet which is the subject of the present invention, the molten steel obtained by the conventionally used steelmaking method is cast by the continuous casting method or the ingot casting method, and if necessary, slabbing A slab is obtained by sandwiching the steps, followed by hot rolling, and if necessary hot-rolled sheet annealing, and then once or intermediate annealing 2
The final gauge cold rolled sheet is obtained by cold rolling more than once, and then decarburization annealing is performed by a conventional method.

熱延板の化学成分は重量%でSi:2.5〜4.0%,C:0.03〜0.
10%,酸可溶性Al:0.010〜0.065%,N:0.0010〜0.0150
%,Mn:0.02〜0.30%,S:0.005〜0.040%,その他インヒ
ビター構成元素として公知であるSn,Sb,Se,Te,Cu,Nb,C
r,Ni,B,V,As,Bi等を必要に応じて含有させてもよく、そ
の他実質Feからなっている。本発明の成分系における主
インヒビターはAlNであり、最終冷延以前の工程でAlNを
析出させる焼鈍を必要に応じて行なう。脱炭焼鈍後鋼板
にMgOを主成分とする焼鈍分離剤を塗布し、最終仕上焼
鈍を行なう。本発明の特徴はこの最終仕上焼鈍工程にあ
る。
The chemical composition of the hot-rolled sheet is Si: 2.5-4.0%, C: 0.03--0 by weight%.
10%, acid soluble Al: 0.010 to 0.065%, N: 0.0010 to 0.0150
%, Mn: 0.02 to 0.30%, S: 0.005 to 0.040%, Sn, Sb, Se, Te, Cu, Nb, C known as other inhibitor constituent elements
If necessary, r, Ni, B, V, As, Bi, etc. may be contained, and other elements are essentially Fe. The main inhibitor in the component system of the present invention is AlN, and annealing for precipitating AlN is performed as necessary in the step before final cold rolling. After decarburization annealing, an annealing separator containing MgO as a main component is applied to the steel sheet, and final finish annealing is performed. The feature of the present invention lies in this final finish annealing step.

即ち、最終仕上焼鈍工程において、800℃以下での焼鈍
雰囲気での を0.1以下とし、2次再結晶の開始から完了までの途中
段階で焼鈍雰囲気のN2分圧を増加させることによって極
めて磁束密度の高い一方向性電磁鋼板を安定し得ること
ができる。
That is, in the final finishing annealing step, in an annealing atmosphere at 800 ° C or less. Is 0.1 or less and the N 2 partial pressure of the annealing atmosphere is increased in the middle of the process from the start to the completion of the secondary recrystallization, so that the grain-oriented electrical steel sheet having an extremely high magnetic flux density can be stabilized.

本発明者らは最終仕上焼鈍工程において、2次再結晶の
開始から完了までの途中段階で焼鈍雰囲気のN2分圧を増
加されることによって磁束密度を高める方法を提示した
(特願昭61−61993)。確かにこの方法によって磁束密
度は高まるが、N2分圧を増加させて効果のある条件範囲
(温度範囲、焼鈍時間範囲等)が、必ずしも広くないと
いう問題が残されていた。通常最終仕上焼鈍は鋼板を5
〜20Tonのコイル状として行なわれ、コイル内には不可
避的に温度差等不均一性が存在する。極めて磁束密度の
高い製品を工業的に安定して製造するためには効果のあ
る条件範囲を広げる必要があった。
The present inventors have proposed a method of increasing the magnetic flux density by increasing the N 2 partial pressure of the annealing atmosphere in the intermediate stage from the start to the completion of secondary recrystallization in the final finish annealing step (Japanese Patent Application No. 61-61). -61993). Although the magnetic flux density is certainly increased by this method, there remains a problem that the condition range (temperature range, annealing time range, etc.) in which the N 2 partial pressure is increased is not necessarily wide. Normally, the final finish annealing is performed by
It is performed in the form of a coil of up to 20 Ton, and inhomogeneities such as temperature differences inevitably exist in the coil. In order to industrially stably manufacture products with extremely high magnetic flux density, it was necessary to expand the range of effective conditions.

本発明者らはN2分圧を増加させて効果のある条件範囲を
広げるためには2次再結晶の開始から完了までの条件範
囲(温度範囲、焼鈍時間範囲等)を広げる必要があると
の観点から種々の実験を行なった結果、800℃以下での
焼鈍雰囲気での を0.1以下にすることが極めて有効であるとの新知見を
得た。
In order to increase the N 2 partial pressure and expand the range of effective conditions, the present inventors need to expand the range of conditions (temperature range, annealing time range, etc.) from the start to the completion of secondary recrystallization. As a result of various experiments from the viewpoint of We obtained new knowledge that it is extremely effective to make the value 0.1 or less.

第1図に最終仕上焼鈍工程における800℃以下での焼鈍
雰囲気の と2次再結晶挙動との関係を示す。この場合Si:3.25%,
C:0.080%,酸可溶性Al:0.026%,N:0.0080%,Mn:0.074
%,S:0.024%を含有する2.3mm厚の熱延板を出発材と
し、かかる熱延板を1100℃2分間の焼鈍後急冷し、0.22
5mmの最終厚みまで冷間圧延し、ついで公知の方法で脱
炭焼鈍、MgOを主成分とする焼鈍分離剤の塗布を順次行
ない多数のサンプルを得た。しかる後75%H2+25%N2
混合ガス中において15℃/hrの加熱速度で1100℃まで昇
温し、900〜1100℃の各温度で20℃毎にサンプルを加熱
炉から順次引き出した。引き出したサンプルを酸洗し、
表面を占める2次再結晶粒の面積率(2次再結晶率)を
測定した。800℃以下での焼鈍雰囲気での は2×10-1,1×10-1,2×10-2の3水準とした。第1図か
ら明らかなように800℃以下での焼鈍雰囲気の が低くなるほど2次再結晶の進行が遅れている。
Figure 1 shows the annealing atmosphere below 800 ° C in the final finish annealing process. And the secondary recrystallization behavior are shown. In this case Si: 3.25%,
C: 0.080%, acid soluble Al: 0.026%, N: 0.0080%, Mn: 0.074
%, S: 0.024% containing a 2.3 mm thick hot rolled sheet as a starting material, and the hot rolled sheet was annealed at 1100 ° C. for 2 minutes and then rapidly cooled to 0.22
Cold rolling was performed to a final thickness of 5 mm, and then decarburization annealing and an annealing separator containing MgO as a main component were sequentially applied by known methods to obtain a large number of samples. The temperature was raised to 1100 ° C. at a heating rate of 15 ° C. / hr in a mixed gas of thereafter 75% H 2 + 25% N 2, the sample was successively drawn out from the heating furnace every 20 ° C. at each temperature of 900 to 1100 ° C. . Pickling the extracted sample,
The area ratio (secondary recrystallization ratio) of secondary recrystallized grains occupying the surface was measured. In an annealing atmosphere below 800 ° C Was set to 3 levels of 2 × 10 -1 , 1 × 10 -1 , 2 × 10 -2 . As is clear from Fig. 1, the annealing atmosphere below 800 ° C As the value becomes lower, the progress of secondary recrystallization is delayed.

第2図に最終仕上焼鈍の加熱昇温中N2分圧を増加させた
温度と製品の磁束密度との関係を示す。この場合成分、
焼鈍分離剤の塗布に至るまでの工程条件は第1図を説明
したものと同一であり、焼鈍分離剤の塗布後15℃/hrの
加熱速度で1200℃まで昇温し、1200℃の温度で20時間の
最終仕上焼鈍を行なった。焼鈍雰囲気は75%H2+25%N2
の混合ガスで昇温を開始し、第2図に示す各温度で10%
H2+90%N2の混合ガスに切り換え、1200℃に達した時点
で100%H2ガスに切り換えた。800℃以下での焼鈍雰囲気
は2×10-1,1×10-1,2×10-2の3水準とした。第2図か
ら明らかにように800℃以下での焼鈍雰囲気の が低くなるほど製品の磁束密度が顕著に高まる温度範囲
が広くなる。
Fig. 2 shows the relationship between the temperature at which the partial pressure of N 2 was increased during the heating and heating of the final finish annealing and the magnetic flux density of the product. In this case the ingredients,
The process conditions leading up to the application of the annealing separator are the same as those described in Fig. 1. After the application of the annealing separator, the temperature is raised to 1200 ° C at a heating rate of 15 ° C / hr, and the temperature is 1200 ° C. Final finish annealing was performed for 20 hours. Annealing atmosphere is 75% H 2 + 25% N 2
The temperature rise is started with the mixed gas of 10% at each temperature shown in Fig. 2.
The gas mixture was switched to H 2 + 90% N 2 gas, and when it reached 1200 ° C., it was switched to 100% H 2 gas. In an annealing atmosphere below 800 ° C Was set to 3 levels of 2 × 10 -1 , 1 × 10 -1 , 2 × 10 -2 . As is clear from Fig. 2, the annealing atmosphere below 800 ° C The lower the value, the wider the temperature range in which the magnetic flux density of the product remarkably increases.

本発明の特徴である最終仕上焼鈍における800℃以下で
の焼鈍雰囲気制御効果のメカニズムについては必ずしな
明らかではないが、本発明者らは以下のように考えてい
る。最終仕上焼鈍における800℃以下の温度で を高めると、表面での酸化が促進され表面直下のAlN等
インヒビターが劣化すると考えられる。2次再結晶の核
は表面直下にあることが知られており、表面直下のイン
ヒビターが劣化している場合2次再結晶粒が発生した後
容易に粒成長することができると考えられる。従って表
面での酸化の進行に伴うインヒビターの劣化を抑制する
ことによって2次再結晶の進行を遅延させるためには、
800℃以下の焼鈍雰囲気の を低めることが有効と考えられる。
The mechanism of the effect of controlling the annealing atmosphere at 800 ° C. or less in the final finish annealing, which is a feature of the present invention, is not necessarily clear, but the present inventors consider it as follows. At a temperature of 800 ° C or less in the final finish annealing It is considered that when the value is increased, the oxidation on the surface is promoted and the inhibitor such as AlN directly under the surface is deteriorated. It is known that the nuclei of the secondary recrystallization are located immediately below the surface, and it is considered that when the inhibitors beneath the surface are deteriorated, the secondary recrystallized grains can be easily grown after the secondary recrystallized grains are generated. Therefore, in order to delay the progress of secondary recrystallization by suppressing the deterioration of the inhibitor accompanying the progress of oxidation on the surface,
In an annealing atmosphere below 800 ° C It is considered effective to reduce

本発明において最終仕上焼鈍における800℃以下での焼
鈍雰囲気の を0.1以下と規定したのは、第1図から明らかなように 0.1において2次再結晶の遅延効果が認められ、第2
図に示すように、 0.1において製品の磁束密度向上の見られる温度範囲
が広がるからである。800℃以下と規定したのは800℃以
下の温度範囲の を低めとすることで2次再結晶の遅延が生じ、800℃超
の温度範囲の を過度に低めるとフォルステライトを主とした被膜形成
に悪影響を与えるからである。
In the present invention, the annealing atmosphere at 800 ° C or lower in the final finish annealing As shown in Fig. 1, it was defined that A delay effect of secondary recrystallization was observed at 0.1,
As shown in the figure, This is because at 0.1, the temperature range in which the magnetic flux density of the product is improved can be widened. The temperature range below 800 ℃ is defined as 800 ℃ or below. Lowering the temperature causes a delay in secondary recrystallization, and This is because if the ratio is excessively reduced, the film formation mainly of forsterite is adversely affected.

本発明において、2次再結晶の開始から完了までの途中
段階で焼鈍雰囲気のN2分圧を増加させると規定したの
は、2次再結晶の途中段階で{110}〈001〉方位から分
散した方位粒が2次再結晶してくるのを抑制することに
よって2次再結晶初期に発生する{110}〈001〉方位に
極めて近い2次再結晶粒の粒成長を助長して製品の磁束
密度を高めるためには、2次再結晶の開始から完了まで
の途中段階で焼鈍雰囲気のN2分圧を増加させAlNを主と
したインヒビター(窒化物)を形成させる必要があり、
2次再結晶の開始以前、及び完了後では効果がないため
である。2次再結晶率が低い段階ほど上記効果が大きい
ので、800℃以下の を低くして2次再結晶の進行を遅延させることにより効
果条件範囲(温度範囲等)が広がるものと考えられる。
In the present invention, it is defined that the N 2 partial pressure of the annealing atmosphere is increased in the intermediate stage from the start to the completion of the secondary recrystallization, because the dispersion from the {110} <001> orientation is generated in the intermediate stage of the secondary recrystallization. The magnetic flux of the product is promoted by suppressing the secondary recrystallization of the generated oriented grains and promoting the grain growth of the secondary recrystallized grains that are very close to the {110} <001> orientation generated in the initial stage of the secondary recrystallization. In order to increase the density, it is necessary to increase the N 2 partial pressure in the annealing atmosphere in the intermediate stage from the start to the completion of secondary recrystallization to form an AlN-based inhibitor (nitride).
This is because there is no effect before the start of the secondary recrystallization and after the completion of the secondary recrystallization. Since the above effect is more significant in the stage where the secondary recrystallization rate is lower, It is considered that the effective condition range (temperature range, etc.) is widened by lowering the temperature and delaying the progress of secondary recrystallization.

最終仕上焼鈍の方法については特に限定しない。加熱昇
温中に2次再結晶を生じさせる方法、恒温保定中に2次
再結晶を生じさせる方法等いずれの方法でもよい。焼鈍
雰囲気中のN2分圧を増加させる温度、焼鈍開始からの時
間については特に限定しない、2次再結晶が開始してい
ればよい。恒温保定と昇温とを組合わせて2次再結晶を
行なわせる方法等でも、本発明の効果が得られることは
明らかである。
The method of final finish annealing is not particularly limited. Any method may be used, such as a method of causing secondary recrystallization during heating and heating, a method of causing secondary recrystallization during isothermal holding. The temperature for increasing the N 2 partial pressure in the annealing atmosphere and the time from the start of annealing are not particularly limited as long as secondary recrystallization has started. It is clear that the effect of the present invention can be obtained also by a method of performing secondary recrystallization by combining constant temperature holding and temperature increase.

最終仕上焼鈍後に鋼板に張力を付加するコーティングを
行なうと鉄損特性が一層向上する。本発明によって製造
された製品は極めて磁束密度が高いため、レーザー等を
用いた磁区制御を行なうと極めて鉄損特性を優れた製品
となる。
The iron loss characteristics are further improved by coating the steel sheet with tension after the final finish annealing. Since the magnetic flux density of the product manufactured by the present invention is extremely high, magnetic domain control using a laser or the like makes the product extremely excellent in iron loss characteristics.

以下実施例について述べる。Examples will be described below.

実施例1 Si:3.25%,C:0.080%,酸可溶性Al:0.026%,N:0.0080
%,Mn:0.073%,S:0.025%,Sn:0.012%を含む板厚2.3mm
の熱延板に1100℃2分間の焼鈍後0.225mmの最終厚みま
で冷間圧延し、ついで脱炭焼鈍し、ひき続きMgOを主成
分とする焼鈍分離剤を塗布し、1200℃まで15℃/hrで昇
温し、1200℃の温度で20時間の最終仕上焼鈍を行なっ
た。800℃以下での焼鈍雰囲気の を(1)2×10-2,(2)2×10-1の2通りとし、雰囲
気ガスの条件は(a)昇温過程1200℃まで75%H2+25%
N2で処理、(b)昇温過程980℃まで75%H2+25%N2
処理し、980℃から1200℃まで10%H2+90%N2で処理、
(c)昇温過程1010℃まで75%H2+25%N2で処理し、10
10℃から1200℃まで10%H2+90%N2で処理、(d)昇温
過程1040℃まで75%H2+25%N2で処理し、1040℃から12
00℃まで10%H2+90%N2で処理の4通りとし1200℃にな
った時点で100%H2として焼鈍を行なった。(1)
(a)の条件の場合約970℃で2次再結晶が開始し、約1
060℃で2次再結晶が完了しており、(1)(b),
(1)(c),(1)(d)の条件では2次再結晶の開
始から完了までの途中段階でN2分圧を増加させたことに
なる。また(2)(a)の条件の場合約970℃で2次再
結晶が開始し、約1050℃で2次再結晶が完了しており、
(2)(b),(2)(c),(2)(d)の条件では
2次再結晶の開始から完了までの途中段階でN2分圧を増
加させたことになる。処理条件と製品の磁束密度を第1
表に示す。
Example 1 Si: 3.25%, C: 0.080%, acid-soluble Al: 0.026%, N: 0.0080
%, Mn: 0.073%, S: 0.025%, Sn: 0.012%, including 2.3mm
After annealing at 1100 ℃ for 2 minutes, cold-rolled to a final thickness of 0.225mm, followed by decarburization annealing, and subsequently applying an annealing separating agent containing MgO as the main component, up to 1200 ℃ at 15 ℃ / The temperature was raised at hr and the final finishing annealing was performed at 1200 ° C for 20 hours. In an annealing atmosphere below 800 ° C (1) 2 × 10 -2 , (2) 2 × 10 -1 and the atmospheric gas conditions are (a) 75% H 2 + 25% up to 1200 ° C
Treatment with N 2 , (b) Temperature rising process Treated with 75% H 2 + 25% N 2 up to 980 ° C, treated with 10% H 2 + 90% N 2 from 980 ° C to 1200 ° C,
(C) Temperature rising process 10 Treated with 75% H 2 + 25% N 2 up to 10 ° C,
Treated with 10% H 2 + 90% N 2 from 10 ℃ to 1200 ℃, (d) Temperature rising process Treated with 75% H 2 + 25% N 2 up to 1040 ℃, from 1040 ℃ to 12 ℃
Four treatments of 10% H 2 + 90% N 2 were carried out up to 00 ° C., and when it reached 1200 ° C., 100% H 2 was annealed. (1)
In the case of condition (a), secondary recrystallization started at about 970 ° C,
Secondary recrystallization was completed at 060 ° C, and (1) (b),
Under the conditions of (1) (c) and (1) (d), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. In the case of the condition (2) (a), the secondary recrystallization started at about 970 ° C, and the secondary recrystallization was completed at about 1050 ° C.
Under the conditions of (2) (b), (2) (c), (2) (d), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. The processing condition and the magnetic flux density of the product
Shown in the table.

実施例2 Si:3.25%,C:0.079%,酸可溶性Al:0.025%,N:0.0081
%,Mn:0.074%,S:0.025%,Sn:0.12%,Cu:0.06%を含む
板厚2.3mmの熱延板を、1000℃3分間焼鈍後急冷し、1.3
5mm厚まで冷間圧延し、ついで1100℃2分間の中間焼鈍
後急冷し、0.170mmの最終厚みまで冷間圧延し、ついで
脱炭焼鈍し、ひき続きMgOを主成分とする焼鈍分離剤を
塗布し、1200℃まで15℃/hrで昇温し、1200℃の温度で2
0時間の最終仕上焼鈍を行なった。800℃以下での焼鈍雰
囲気の を(1)2×10-2,(2)2×10-1の2通りとし、雰囲
気ガスの条件は(a)昇温過程1200℃まで75%H2+25%
N2で処理、(b)昇温過程960℃まで75%H2+25%N2
処理し、960℃から1200℃まで25%H2+75%N2で処理
し、(c)昇温過程1000℃まで75%H2+25%N2で処理
し、1000℃から1200℃まで25%H2+75%N2で処理、
(d)昇温過程1040℃まで75%H2+25%N2で処理し、10
40℃から1200℃まで25%H2+75%N2で処理の4通りと
し、1200℃になった時点で100%H2として焼鈍を行なっ
た。(1)(a)の条件の場合約950℃で2次再結晶が
開始し、約1050℃で完了しており、(1)(b),
(1)(c),(1)(d)の条件では2次再結晶の開
始から完了までの途中段階でN2分圧を増加させたことに
なる。また(2)(a)の条件の場合約950℃で2次再
結晶が開始し、約1040℃で2次再結晶が完了しており、
(2)(b),(2)(c)の条件では2次再結晶の開
始から完了までの途中段階でN2分圧を増加させたことに
なる。処理条件と製品の磁束密度を第2表に示す。
Example 2 Si: 3.25%, C: 0.079%, acid-soluble Al: 0.025%, N: 0.0081
%, Mn: 0.074%, S: 0.025%, Sn: 0.12%, Cu: 0.06%, a hot rolled sheet with a thickness of 2.3 mm was annealed at 1000 ° C for 3 minutes and then rapidly cooled to 1.3.
Cold rolled to a thickness of 5 mm, then intermediate-annealed at 1100 ° C for 2 minutes, then rapidly cooled, cold-rolled to a final thickness of 0.170 mm, then decarburized and annealed, followed by an MgO-based annealing separator. Then, increase the temperature up to 1200 ℃ at 15 ℃ / hr.
A final finish annealing of 0 hours was performed. In an annealing atmosphere below 800 ° C (1) 2 × 10 -2 , (2) 2 × 10 -1 and the atmospheric gas conditions are (a) 75% H 2 + 25% up to 1200 ° C
Treatment with N 2 , (b) Temperature raising process Treatment with 75% H 2 + 25% N 2 up to 960 ° C, treatment with 25% H 2 + 75% N 2 from 960 ° C to 1200 ° C, (c) Temperature raising process Treated with 75% H 2 + 25% N 2 up to 1000 ° C, treated with 25% H 2 + 75% N 2 from 1000 ° C to 1200 ° C,
(D) Temperature rising process Treated with 75% H 2 + 25% N 2 up to 1040 ° C.
From 40 ° C to 1200 ° C, four treatments of 25% H 2 + 75% N 2 were performed, and when the temperature reached 1200 ° C, 100% H 2 was used for annealing. In the case of (1) (a), the secondary recrystallization started at about 950 ° C and completed at about 1050 ° C, and (1) (b),
Under the conditions of (1) (c) and (1) (d), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. In the case of the conditions of (2) (a), the secondary recrystallization started at about 950 ° C, and the secondary recrystallization was completed at about 1040 ° C.
Under the conditions of (2) (b) and (2) (c), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. Table 2 shows the processing conditions and the magnetic flux density of the product.

実施例3 Si:3.28%,C:0.077%,酸可溶性Al:0.028%,N:0.0083
%,Mn:0.077%,S:0.024%を含む板厚2.3mmの熱延板を11
20℃に30秒保持しひき続き900℃に1分間保持した後急
冷し、0.285mmの最終厚みまで冷間圧延し、ついで脱炭
焼鈍し、ひき続きMgOを主成分とする焼鈍分離剤を塗布
し、1200℃まで20℃/hrで昇温し、1200℃の温度で20時
間の最終仕上焼鈍を行なった。800℃以下での焼鈍雰囲
気の を(1)2×10-4,(2)2×10-1の2通りとし雰囲気
ガスの条件は(a)昇温過程1200℃まで75%H2+25%N2
で処理、(b)昇温過程990℃まで75%H2+25%N2で処
理し、990℃から1200℃まで10%H2+90%N2で処理し、
(c)昇温過程1010℃まで75%H2+25%N2で処理し、10
10℃から1200℃まで10%H2+90%N2で処理し、(d)昇
温過程1030℃まで75%H2+25%N2で処理し、1030℃から
1200℃まで10%H2+90%N2で処理の4通りとし、1200℃
になった時点で100%H2として焼鈍を行なった。
Example 3 Si: 3.28%, C: 0.077%, acid-soluble Al: 0.028%, N: 0.0083
%, Mn: 0.077%, S: 0.024% 11 mm
Hold at 20 ° C for 30 seconds, continue to hold at 900 ° C for 1 minute, quench, then cold-roll to a final thickness of 0.285mm, then decarburize and anneal, then apply an annealing separator containing MgO as the main component. Then, the temperature was raised to 1200 ° C at a rate of 20 ° C / hr, and final finishing annealing was performed at a temperature of 1200 ° C for 20 hours. In an annealing atmosphere below 800 ° C The (1) 2 × 10 -4, (2) 2 × 10 conditions of the atmosphere gas and two kinds of -1 to 1200 ° C. (a) heating process 75% H 2 + 25% N 2
(B) Temperature rising process Treated with 75% H 2 + 25% N 2 up to 990 ° C, treated with 10% H 2 + 90% N 2 from 990 ° C to 1200 ° C,
(C) Temperature rising process 10 Treated with 75% H 2 + 25% N 2 up to 10 ° C,
From 10 ℃ to 1200 ℃, treated with 10% H 2 + 90% N 2 , (d) Temperature rising process 1030 ℃, treated with 75% H 2 + 25% N 2
Four treatments of 10% H 2 + 90% N 2 up to 1200 ℃, 1200 ℃
When it became, it was annealed with 100% H 2 .

(1)(a)の条件の場合約970℃で2次再結晶が開始
し、約1060℃で完了しており、(1)(b),(1)
(c),(1)(d)の条件では2次再結晶の開始から
完了までの途中段階でN2分圧を増加させたことになる。
また(2)(a)の条件の場合約970℃で2次再結晶が
開始し、約1050℃で完了しており、(2)(b),
(2)(c),(2)(d)の条件では2次再結晶の開
始から完了までの途中段階でN2分圧を増加させたことに
なる。処理条件と製品の磁束密度を第3表に示す。
(1) In the case of (a), secondary recrystallization started at about 970 ° C and completed at about 1060 ° C, and (1) (b), (1)
Under the conditions of (c), (1), and (d), the N 2 partial pressure was increased in the intermediate stage from the start to the completion of secondary recrystallization.
In the case of condition (2) (a), secondary recrystallization started at about 970 ° C and completed at about 1050 ° C, and (2) (b),
Under the conditions of (2) (c) and (2) (d), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. Table 3 shows the treatment conditions and the magnetic flux density of the product.

実施例4 Si:3.30%,C:0.081%,酸可溶性Al:0.027%,N:0.0079
%,Mn:0.076%,S:0.024%,Sn:0.13%,Cu:0.06%を含む
板厚2.3mmの熱延板に1100℃2分間の焼鈍後0.225mmの最
終厚みまで冷間圧延し、ついで脱炭焼鈍し、ひき続きMg
Oを主成分とする焼鈍分離剤を塗布し、1200℃まで15℃/
hrで昇温し、1200℃の温度で20時間の最終仕上焼鈍を行
なった。400℃以下での焼鈍雰囲気のPH2O/PH2を2×10
-2とし400℃から800℃までの温度範囲の焼鈍雰囲気の を(1)2×10-2,(2)2×10-1の2通りとし、雰囲
気ガスの条件は(a)は昇温過程1200℃まで75%H2+25
%N2で処理、(b)昇温過程980℃まで75%H2+25%N2
で処理し、980℃から1200℃まで100%N2で処理、(c)
昇温過程1010℃まで75%H2+25%N2で処理し、1010℃か
ら1200℃まで100%N2で処理、(d)昇温過程1040℃ま
で75%H2+25%N2で処理し、1040℃から1200℃まで100
%N2で処理の4通りとし1200℃になった時点で100%H2
として焼鈍を行なった。(1)(a)の条件の場合約96
0℃で2次再結晶が開始し、約1060℃で2次再結晶が完
了しており、(1)(b),(1)(c),(1)
(d)の条件では2次再結晶の開始から完了までの途中
段階でN2分圧を増加させたことになる。また(2)
(a)の条件の場合約960℃で2次再結晶が開始し、約1
050℃で2次再結晶が完了しており、(2)(b),
(2)(c),(2)(d)の条件では2次再結晶の開
始から完了までの途中段階でN2分圧を増加させたことに
なる。処理条件と製品の磁束密度を第4表に示す。
Example 4 Si: 3.30%, C: 0.081%, acid-soluble Al: 0.027%, N: 0.0079
%, Mn: 0.076%, S: 0.024%, Sn: 0.13%, Cu: 0.06% hot rolled sheet having a thickness of 2.3 mm, annealed at 1100 ° C for 2 minutes, cold rolled to a final thickness of 0.225 mm, Then, decarburize and anneal and continue Mg
Applying an annealing separator containing O as the main component, up to 1200 ℃ at 15 ℃ /
The temperature was raised at hr and the final finishing annealing was performed at 1200 ° C for 20 hours. 2 × 10 P H2O / P H2 in the annealing atmosphere at 400 ℃ or less
-2 and the annealing atmosphere in the temperature range from 400 ℃ to 800 ℃ (1) 2 × 10 −2 , (2) 2 × 10 −1 , and the atmospheric gas conditions are as follows: (a) 75% H 2 +25 up to 1200 ℃
% N 2 in the process, (b) 75% to heating process 980 ℃ H 2 + 25% N 2
Treated with 100% N 2 from 980 ℃ to 1200 ℃, (c)
Heating process up to 1010 ° C, treated with 75% H 2 + 25% N 2 , and treated from 1010 ° C to 1200 ° C with 100% N 2 , (d) Heating process up to 1040 ° C, treated with 75% H 2 + 25% N 2 . 100 from 1040 ℃ to 1200 ℃
Treatment with 4% N 2 and 100% H 2 at 1200 ℃
Was annealed. Under the conditions of (1) (a), about 96
Secondary recrystallization started at 0 ° C. and completed at about 1060 ° C. (1) (b), (1) (c), (1)
Under the condition of (d), the N 2 partial pressure was increased in the intermediate stage from the start to the completion of secondary recrystallization. Also (2)
In the case of condition (a), secondary recrystallization starts at about 960 ° C,
Secondary recrystallization was completed at 050 ° C, and (2) (b),
Under the conditions of (2) (c) and (2) (d), it means that the N 2 partial pressure was increased in the intermediate stage from the start to the completion of the secondary recrystallization. Table 4 shows the processing conditions and the magnetic flux density of the product.

〔発明の効果〕 以上のとおり、本発明によれば最終仕上焼鈍工程におい
て、800℃以下の を0.1以下とし、2次再結晶の開始から完了までの途中
段階で焼鈍雰囲気のN2分圧を増加させることによって極
めて磁束密度の高い一方向性電磁鋼板を広い条件範囲
(N2分圧増加温度等)で安定して製造することができる
ので、その工業的効果は大きい。
[Effects of the Invention] As described above, according to the present invention, in the final finish annealing step, Is set to 0.1 or less, and by increasing the N 2 partial pressure in the annealing atmosphere in the intermediate stage from the start to the completion of the secondary recrystallization, a directional electrical steel sheet with extremely high magnetic flux density can be obtained in a wide condition range (increase of N 2 partial pressure Since it can be stably manufactured at temperature etc., its industrial effect is great.

【図面の簡単な説明】[Brief description of drawings]

第1図は、最終仕上焼鈍工程における800℃以下での焼
鈍雰囲気の と2次再結晶挙動との関係図であり、第2図は最終仕上
焼鈍の加熱昇温中N2分圧を増加させた温度と製品の磁束
密度との関係図である。
Figure 1 shows the annealing atmosphere below 800 ° C in the final finish annealing process. And FIG. 2 is a relational diagram between the secondary recrystallization behavior and FIG. 2 is a relational diagram between the temperature at which the N 2 partial pressure is increased during the heating and heating of the final annealing and the magnetic flux density of the product.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】含Al方向性電磁鋼板の製造に於て、通常の
工程で得られた冷延板を脱炭焼鈍後、最終仕上焼鈍を施
す工程に於て、800℃以下での焼鈍雰囲気の を0.1以下とし、2次再結晶の開始から完了までの途中
段階で焼鈍雰囲気のN2分圧を増加させることを特徴とす
る磁束密度の極めて高い一方向性電磁鋼板の製造方法。
1. In the production of an Al-containing grain-oriented electrical steel sheet, a cold-rolled sheet obtained in a usual step is subjected to decarburization annealing and then subjected to final finish annealing, and an annealing atmosphere at 800 ° C. or lower is used. of Is 0.1 or less, and the N 2 partial pressure of the annealing atmosphere is increased in the intermediate stage from the start to the completion of the secondary recrystallization.
JP62055380A 1987-03-12 1987-03-12 Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density Expired - Lifetime JPH07110973B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62055380A JPH07110973B2 (en) 1987-03-12 1987-03-12 Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62055380A JPH07110973B2 (en) 1987-03-12 1987-03-12 Method for producing unidirectional electrical steel sheet with extremely high magnetic flux density

Publications (2)

Publication Number Publication Date
JPS63223126A JPS63223126A (en) 1988-09-16
JPH07110973B2 true JPH07110973B2 (en) 1995-11-29

Family

ID=12996883

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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