JPH07111442B2 - Waveform storage - Google Patents
Waveform storageInfo
- Publication number
- JPH07111442B2 JPH07111442B2 JP1156799A JP15679989A JPH07111442B2 JP H07111442 B2 JPH07111442 B2 JP H07111442B2 JP 1156799 A JP1156799 A JP 1156799A JP 15679989 A JP15679989 A JP 15679989A JP H07111442 B2 JPH07111442 B2 JP H07111442B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- signal
- memories
- time
- counter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 33
- 230000009977 dual effect Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000005070 sampling Methods 0.000 description 8
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- Analogue/Digital Conversion (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は波形記憶装置のサンプリングの制御に関するも
のである。The present invention relates to sampling control of a waveform storage device.
サンプリング速度がメモリのアクセスタイム以上に速く
なると,並列に複数のメモリを用意し,順々に記憶させ
ていく方法が用いられている。(以下,これを多相メモ
リと呼ぶことにする。) この多相メモリを用いた場合は,記憶した波形デーダと
トリガの位置関係は,単相メモリの場合とトリガとメモ
リアドレスの関係に加えて,何相目の時にトリガがあっ
たか,という情報も必要になる。本発明は,この何相目
にトリガがあったかという情報を得る為の回路方式につ
いて記述したもので,特に高速回路を用いずにこれを実
現したものである。When the sampling speed becomes faster than the access time of the memory, a method of preparing a plurality of memories in parallel and storing them sequentially is used. (Hereinafter, this is referred to as a polyphase memory.) When this polyphase memory is used, the positional relationship between the stored waveform data and the trigger is in addition to the case of the single-phase memory and the relationship between the trigger and the memory address. Therefore, it is necessary to have information on what phase the trigger was generated. The present invention describes a circuit system for obtaining information on which phase the trigger has occurred, and realizes this without using a high-speed circuit.
第3図に従来技術の1例を示すブロック図,第4図に同
じくタイムチャートを示す。1はAD変換器,2〜5はラッ
チ,6〜9はメモリ,10は4相信号発生回路,14は高速動作
するサンプル数制御用カウンタ回路,12はDタイプフリ
ップフロップ,21はトライステートバッファ回路,20はマ
イクロプロセッサである。以下,動作を説明する。FIG. 3 is a block diagram showing an example of the prior art, and FIG. 4 is a time chart similarly. Reference numeral 1 is an AD converter, 2 to 5 are latches, 6 to 9 are memories, 10 is a 4-phase signal generation circuit, 14 is a counter circuit for controlling the number of samples which operates at high speed, 12 is a D type flip-flop, and 21 is a tri-state buffer. The circuit, 20 is a microprocessor. The operation will be described below.
クロック(以下CLK)に従いAD変換器1がAD変換を行
い,ディジタル波形データAを出力する。4相信号発生
回路10がCLKの1/4周波数で,1CLK周期ずつ位相のずれた
信号B,C,D,Eを出力する。この信号B,C,D,Eによりディジ
タル波形データAをラッチ2〜5が順々にラッチしてい
く。このラッチの出力は,サンプリングレートであるCL
Kの1/4周波数レートとなる。次に,メモリ6〜9に書き
込まれる。(本例では,メモリ6〜9はFIFO的なもので
あると考えて頂きたい。) この様にAD変換された波形データが順次メモリ6〜9に
記憶されていく。次にトリガ信号がTRIGから入力された
時,それ以降,CLKと同じ周波数で動作する高速のサンプ
ル数制御カウンタ14がCLKのカウントを始め,所定数カ
ウントするとカウント終了フラグJを出力する。この信
号Jが次のCLKでDタイムフリップフロップ12にラッチ
され,信号LがLowレベルになり4相信号発生回路10にC
LK信号が入らなくなり,B〜Eの4相信号が止まり,メモ
リ6〜9への書き込みが止まる。AD converter 1 performs AD conversion according to a clock (hereinafter referred to as CLK) and outputs digital waveform data A. The four-phase signal generation circuit 10 outputs signals B, C, D, and E that are 1/4 the frequency of CLK and are out of phase by one CLK cycle. Latches 2 to 5 sequentially latch the digital waveform data A by the signals B, C, D and E. The output of this latch is CL, which is the sampling rate.
It becomes 1/4 frequency rate of K. Next, the data is written in the memories 6 to 9. (In this example, consider that the memories 6 to 9 are FIFO-like.) The waveform data AD-converted in this way are sequentially stored in the memories 6 to 9. Next, when a trigger signal is input from TRIG, the high-speed sample number control counter 14 that operates at the same frequency as CLK thereafter starts counting CLK, and outputs a count end flag J when a predetermined number has been counted. This signal J is latched by the D time flip-flop 12 at the next CLK, the signal L becomes low level, and the four-phase signal generation circuit 10 receives C
The LK signal does not come in, the four-phase signals B to E stop, and writing to the memories 6 to 9 stops.
メモリの何相目にトリガがあったかは,マイクロプロセ
ッサ20がバッファ回路21を通して,4相信号B〜Eの状態
を読むことによって得られる。(なぜならば,TRIG信号
時から所定のCLK信号数をカウントして4相信号発生回
路10を止めたので,TRIG時と書き込みが止まった時の信
号B〜Eには1対1の相関関係があるからである。)以
下,マイクロプロセッサ20は,読み込んだ信号B〜Eの
状態に従い,メモリ6〜9の波形データを読む順番を決
め,波形データを図示していない表示回路へ転送する。The phase of the memory in which the trigger is generated can be obtained by the microprocessor 20 reading the states of the four-phase signals B to E through the buffer circuit 21. (Because the four-phase signal generation circuit 10 is stopped by counting the predetermined number of CLK signals from the time of TRIG signal, there is a one-to-one correlation between the signals B to E at the time of TRIG and when writing is stopped. After that, the microprocessor 20 determines the reading order of the waveform data in the memories 6 to 9 according to the states of the read signals B to E, and transfers the waveform data to a display circuit (not shown).
ここで,前述の従来技術で用いるサンプル数制御用カウ
ンタ回路14は,サンプリングレートであるCLKと同周波
数で動作しなければならないので,高速のカウンタ回路
でなければならない。又,メモリ容量分のカウント数が
必要になるので多相メモリの相数(前述例では4相にし
たが)が多くなればなるほどカウントのビット数を多く
しなければならない。高速でかつカウント数の多いカウ
ンタ回路は高価であり,CLKとの同期を常に考えた回路と
しなければならず論理が難しくなる。又,サンプルレー
トがさらに速くなると実現不可能となる限界ができてし
まう。本発明はこれらの欠点を解決することを目的とす
る。Here, the counter circuit 14 for controlling the number of samples used in the above-mentioned conventional technique must operate at the same frequency as the sampling rate CLK, and therefore must be a high-speed counter circuit. Also, since the number of counts corresponding to the memory capacity is required, the number of bits of the count must be increased as the number of phases of the multi-phase memory (in the above example, four phases are used). A counter circuit that is high-speed and has a large number of counts is expensive, and it must be a circuit that always considers synchronization with CLK, which makes logic difficult. Further, if the sample rate becomes higher, there will be a limit that cannot be realized. The present invention aims to overcome these drawbacks.
本発明は多相メモリ方式において,上記の目的を達成す
るために,トリガ位置の検出を2つの回路に分けたもの
である。第1は全相を1まとまりに見たてて,トリガが
入力されてから全相を1ワード又は数ワードずつ記憶す
る毎にカウントするサンプル数制御回路である。第2
は,トリガからある相までの時間を測定する回路であ
る。According to the present invention, in the multi-phase memory system, the detection of the trigger position is divided into two circuits in order to achieve the above object. The first is a sample number control circuit which looks at all the phases as one group and counts every time when all the phases are stored by one word or several words after a trigger is input. Second
Is a circuit that measures the time from the trigger to a certain phase.
この2つの回路により,サンプリングの制御およびトリ
ガ位置の検出を行う。第1の回路はサンプリングレート
に対し,メモリの相数分の1の周波数で動作できればよ
く,また相数が増えても何も変えずに対応できる。第2
は,一例として,デュアルスロープ回路とカウンタがあ
ればよいので高速のサンプル数制御用カウンタ回路が不
要となり高速部品は少なくてすむ利点がある。These two circuits control sampling and detect the trigger position. The first circuit only needs to be able to operate at a frequency that is a fraction of the number of phases of the memory with respect to the sampling rate, and can cope with an increase in the number of phases without changing anything. Second
As an example, since it suffices to have a dual slope circuit and a counter, there is an advantage that a high-speed sample number control counter circuit is not required and high-speed parts can be reduced.
その結果,前述第1の回路は,サンプリングレートに対
してメモリの相数分の1で動作すればよいので比較的低
速の回路を用いることができる。第2の回路は,トリガ
位置とメモリの相の相関々係が得られる。よって従来技
術に示す様な高速カウンタ回路を用いずにサンプリング
の制御及びトリガ位置の検出が得られることになる。As a result, the above-mentioned first circuit has only to operate at a fraction of the number of phases of the memory with respect to the sampling rate, so that a relatively low-speed circuit can be used. The second circuit provides the correlation between the trigger position and the memory phase. Therefore, sampling control and trigger position detection can be obtained without using the high-speed counter circuit as shown in the prior art.
本発明の一実施例のブロック図を第1図に,タイムチャ
ートを第2図に示す。なお,両図において,第3図,第
4図と同符号は同一物を示している。また,本実施例で
は従来例と同じく4相で説明するが16相,32相等,相数
は限定されない。AD変換器1が出力した波形データAを
ラッチ回路2〜5でラッチし,メモリ回路6〜9に記憶
するのは,前述の従来技術説明と同じである。第1の相
違点は,サンプル数制御用カウンタ回路14′は,CLKでは
なく,Dの相信号をカウントしている点である。(すなわ
ち,第3図のサンプル数制御用カウンタ14に対し,第1
図のカウンタ14′は1/4の速さで動作すれば良い。)ト
リガ信号(TRIG)以降サンプル数制御用カウンタ14′は
全相のメモリが1ワード記憶する毎にカウントをし,所
定のカウント数をカウントし,サンプル終了フラグJを
出力する。Dフリップフロップ回路13,12でサンプル終
了フラグをCLKに同期させ,4相信号発生回路10を止め,
メモリの記憶動作を終了させる。ところが,本回路で
は,必ずメモリ9が書き終わった時点で記憶動作が止ま
るので,トリガがメモリの何相目にあったのかという情
報が判らない。そこで,従来と異る第2の相違点はトリ
ガからある相までの時間を計測する回路を有すること
で,パルス発生回路15デュアルスロープ発生回路16,コ
ンパレータ回路17,アンド回路18,カウンタ回路19,分周
回路22で構成されるトリガ位置の検出用回路はその一例
である。この回路の動作を説明すると,パルス発生回路
15は,トリガ信号(TRIG)から,次のB相信号までGに
Highレベルが出力される。デュアルスロープ回路16は,G
のHighレベルの期間に比例して出力Hの波高値が高くな
る。すなわち,出力Hの波高値はトリガ信号からB相信
号までの時間に比例する,GがLowレベルになった瞬間
(すなわち,B相信号が入力した時点)から時間とともに
波高値Hが下がる。この時の下がり方は時間に比例す
る。コンパレータ17は,出力Hが上がってから下がるま
でHighレベルになり,アンド回路18は,分周回路22で分
周されたCLKを通す。その数をカウンタ回路19が計数を
行う。前述のように,デュアルスロープ回路の出力Hが
下かる時間は,波高値(上がっていった時間)に比例す
るので,例えば,デュアルスロープ回路16の出力が上が
る傾きと下がる傾きが1:1000の場合,出力GがHighの期
間を等価的に1000倍に延ばすことができる。故にカウン
タ回路19は特に高速性を要求されないですむ。A block diagram of one embodiment of the present invention is shown in FIG. 1, and a time chart is shown in FIG. In both figures, the same reference numerals as those in FIGS. 3 and 4 indicate the same items. Further, in this embodiment, four phases will be described as in the conventional example, but the number of phases such as 16 phases and 32 phases is not limited. The waveform data A output from the AD converter 1 is latched by the latch circuits 2 to 5 and stored in the memory circuits 6 to 9 in the same manner as the above-mentioned conventional technique. The first difference is that the sample number control counter circuit 14 'counts a D phase signal instead of CLK. (That is, for the sample number control counter 14 in FIG.
The counter 14 'shown in the figure may operate at a speed of 1/4. After the trigger signal (TRIG), the counter 14 'for controlling the number of samples counts each time the memory of all phases stores one word, counts a predetermined number of counts, and outputs the sample end flag J. The sample end flag is synchronized with CLK by the D flip-flop circuits 13 and 12, and the 4-phase signal generation circuit 10 is stopped.
Terminate the memory storage operation. However, in this circuit, the storage operation is always stopped when the memory 9 is completely written, so that it is not possible to know the phase of the memory in which the trigger was located. Therefore, the second difference from the conventional one is that it has a circuit for measuring the time from the trigger to a certain phase, and the pulse generator circuit 15 dual slope generator circuit 16, comparator circuit 17, AND circuit 18, counter circuit 19, An example is a circuit for detecting the trigger position, which is composed of the frequency dividing circuit 22. The operation of this circuit is explained below.
15 is for G from trigger signal (TRIG) to the next B-phase signal
High level is output. Dual slope circuit 16
The peak value of the output H increases in proportion to the High level period. That is, the peak value of the output H is proportional to the time from the trigger signal to the B-phase signal, and the peak value H decreases with time from the moment G becomes the Low level (that is, the time when the B-phase signal is input). At this time, the way of falling is proportional to time. The comparator 17 is at a high level until the output H rises and then falls, and the AND circuit 18 passes the CLK whose frequency is divided by the frequency divider 22. The counter circuit 19 counts the number. As described above, the time when the output H of the dual slope circuit falls is proportional to the peak value (the time when it rises). For example, the rising and falling slopes of the output of the dual slope circuit 16 are 1: 1000. In this case, the period when the output G is High can be extended 1000 times equivalently. Therefore, the counter circuit 19 does not need to have high speed.
カウンタ回路19の計数値は,トリガ信号から第1相目の
タイミングBとの時間差に比例するので,マイクロプロ
セッサ20はカウンタ回路19の計算値を読んでトリガとメ
モリの相のタイミング関係を知ることができる。Since the count value of the counter circuit 19 is proportional to the time difference from the trigger signal to the timing B of the first phase, the microprocessor 20 must read the calculated value of the counter circuit 19 to know the timing relationship between the trigger and memory phases. You can
本発明によれば,多相メモリを用いた波形記憶装置のサ
ンプル制御回路をより安価な低速の回路で実現すること
が可能となる。又,多相メモリの相の増加にも何も付加
することなく対応可能となる。According to the present invention, it becomes possible to realize a sample control circuit of a waveform storage device using a polyphase memory with a cheaper low-speed circuit. Also, it is possible to deal with the increase in the number of phases of the multi-phase memory without adding anything.
第1図は本発明の一実施例を示すブロック図で,第2図
は第1図のタイムチャートである。第3図は従来技術の
一実施例を示すブロック図で,第4図は第3図のタイム
チャートである。 1:AD変換器,2〜5:ラッチ,6〜9:メモリ,10:4相信号発生
回路,11:アンド回路,12〜13:Dフリップフロップ,14,1
4′:サンプル数制御用カウンタ回路,15:パルス発生回
路,16:デュアルスロープ発生回路,17:コンパレータ回
路,18:アンド回路,19:カウンタ回路,20:マイクロプロセ
ッサ,22:分周回路,21:トライステートバッファ。FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a time chart of FIG. FIG. 3 is a block diagram showing an embodiment of the prior art, and FIG. 4 is a time chart of FIG. 1: AD converter, 2 to 5: Latch, 6 to 9: Memory, 10: 4-phase signal generation circuit, 11: AND circuit, 12 to 13: D flip-flop, 14, 1
4 ': counter circuit for controlling the number of samples, 15: pulse generator circuit, 16: dual slope generator circuit, 17: comparator circuit, 18: AND circuit, 19: counter circuit, 20: microprocessor, 22: frequency divider, 21 : Tri-state buffer.
Claims (1)
憶する波形記憶装置において、複数のメモリを持ち波形
データを順次記憶させていく際に波形データを複数のメ
モリへ順次書き込んでいき、個々のメモリの記憶速度を
前記アナログディジタル変換速度より低減させる手段
と、該複数の全メモリに1ワード又は複数ワード書き込
む毎に計数し、所定の数に達したら、書き込みを止める
手段と、前記複数の全メモリを1ワード又は複数ワード
ずつ書き込む周期内に来るトリガ信号のタイミングで充
電を開始し、その後に来る前記複数のメモリの内の任意
のメモリへの書き込み信号のタイミングで充電を終了さ
せ、放電を開始するデュアルスロープ回路と、そのデュ
アルスロープ信号を基準電圧と比較するコンパレータ回
路と、前記デュアルスロープ回路のデュアルスロープ信
号が基準電圧を越えている間前記コンパレータ出力信号
によりクロック信号を計数するカウンタを有し、そのカ
ウンタのカウント値により前記トリガ信号と前記任意の
メモリへの書き込み信号との時間関係を測定する手段を
持つことを特徴とする波形記憶装置。1. A waveform storage device for analog-digital converting an input signal and storing the same, wherein the waveform data is sequentially written into the plurality of memories when the plurality of memories are provided and the waveform data are sequentially stored. Means for reducing the storage speed of the above-mentioned analog-to-digital conversion speed, counting each time one word or a plurality of words is written in all the plurality of memories, and stopping writing when a predetermined number is reached, and a plurality of all the memories. Charging is started at the timing of the trigger signal that comes within the period of writing one word or a plurality of words at a time, and the charging is ended and the discharge is started at the timing of the writing signal to any of the plurality of memories that follows. And a dual-slope circuit that compares the dual-slope signal with a reference voltage. The dual slope signal of the rope circuit has a counter that counts a clock signal by the comparator output signal while the reference voltage is exceeded, and the time between the trigger signal and the write signal to the arbitrary memory according to the count value of the counter. A waveform storage device having means for measuring a relationship.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1156799A JPH07111442B2 (en) | 1989-06-21 | 1989-06-21 | Waveform storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1156799A JPH07111442B2 (en) | 1989-06-21 | 1989-06-21 | Waveform storage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0324469A JPH0324469A (en) | 1991-02-01 |
| JPH07111442B2 true JPH07111442B2 (en) | 1995-11-29 |
Family
ID=15635575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1156799A Expired - Lifetime JPH07111442B2 (en) | 1989-06-21 | 1989-06-21 | Waveform storage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07111442B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62291572A (en) * | 1986-06-11 | 1987-12-18 | Sony Tektronix Corp | Signal memory measuring apparatus |
-
1989
- 1989-06-21 JP JP1156799A patent/JPH07111442B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0324469A (en) | 1991-02-01 |
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