JPH07112083B2 - Array semiconductor laser Edge-pumped solid-state laser - Google Patents
Array semiconductor laser Edge-pumped solid-state laserInfo
- Publication number
- JPH07112083B2 JPH07112083B2 JP2154025A JP15402590A JPH07112083B2 JP H07112083 B2 JPH07112083 B2 JP H07112083B2 JP 2154025 A JP2154025 A JP 2154025A JP 15402590 A JP15402590 A JP 15402590A JP H07112083 B2 JPH07112083 B2 JP H07112083B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser
- solid
- state laser
- array semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Lasers (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、端面光源としての半導体レーザ出力を高効率
で光結合し、固体レーザ素子を光励起する半導体レーザ
励起固体レーザに関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor laser pumped solid-state laser that optically couples the output of a semiconductor laser as an end face light source with high efficiency and optically pumps a solid-state laser element.
[従来の技術] 半導体レーザを励起光源として用いた固体レーザが、高
効率、長寿命、小型化が図れることから、注目を集めて
いる。半導体レーザ励起固体レーザにおける、固体レー
ザの光軸方向から光励起する端面励起方式(例えば特開
昭58−52889号参照)では、固体レーザの発振の空間モ
ードに半導体レーザ出力光による励起空間をうまくマッ
チングさせることにより、高効率で単一基本横モード発
振を実現できる。[Prior Art] A solid-state laser using a semiconductor laser as an excitation light source is attracting attention because it can achieve high efficiency, long life, and miniaturization. In the semiconductor laser pumped solid-state laser, in the end-face pumping method in which the solid-state laser is optically pumped from the optical axis direction (see, for example, Japanese Patent Laid-Open No. 58-52889), the pumping space by the semiconductor laser output light is well matched to the spatial mode of oscillation of the solid-state laser. By doing so, single fundamental transverse mode oscillation can be realized with high efficiency.
[発明が解決しようとする課題] 半導体レーザはビーム発散角が大きいため集光系を半導
体レーザに接近して集光する必要があり発振光の集光は
容易ではない。半導体レーザ励起固体レーザの高出力化
のためには、励起用の半導体レーザを高出力化する必要
がある。半導体レーザはストライプ状の活性層からレー
ザ光が出射するが、単一のストライプレーザでは出力に
限界があり、これ以上の出力を得るためには、複数のス
トライプを並べたアレイ状にしなければならない。[Problems to be Solved by the Invention] Since the semiconductor laser has a large beam divergence angle, it is necessary to focus the focusing system close to the semiconductor laser, and it is not easy to focus the oscillation light. In order to increase the output of a semiconductor laser pumped solid-state laser, it is necessary to increase the output of a semiconductor laser for pumping. A semiconductor laser emits laser light from a stripe-shaped active layer, but a single stripe laser has a limited output, and in order to obtain a higher output, it is necessary to form an array of multiple stripes. .
このようなアレイ半導体レーザを励起光源として用いよ
うとすると、アレイの幅は1cm程の長さに渡るので、通
常のレンズ系を用いて複数ビームを1つのスポット状に
絞り込むことは到底できないため励起効率の良い端面励
起方式が採用できず、側面励起方式にしか適用できなか
った(例えばR.Burnham and A.D.Hays,Opt.Lett.,14,27
(1989);M.K.Reed,W.J.Kozlovsky,R.L.Byer,G.L.Harna
gel,and P.S.Cross,Opt.Lett.,13,204(1988)等参
照)。When such an array semiconductor laser is used as a pumping light source, the width of the array is about 1 cm, so it is impossible to narrow down multiple beams into one spot using a normal lens system. Efficient end-face excitation method could not be adopted and was applicable only to side-excitation method (eg R. Burnham and ADHays, Opt. Lett., 14 , 27
(1989); MKReed, WJKozlovsky, RLByer, GLHarna
gel, and PSCross, Opt. Lett., 13 , 204 (1988) etc.).
本発明は、かかる状況に鑑みてなされたもので、マルチ
ストライプのアレイ半導体レーザから出る発散角が大き
い多数の複数ビームを集光し、固体レーザの発振の空間
モードに半導体レーザ出力光による励起空間をマッチン
グするように、効率よく固体レーザ出力光を生起せしめ
る半導体レーザ励起固体レーザを提供することを目的と
する。The present invention has been made in view of the above situation, and collects a large number of multiple beams with a large divergence angle emitted from a multi-striped array semiconductor laser, and the excitation space by the semiconductor laser output light is set in the spatial mode of oscillation of the solid-state laser. It is an object of the present invention to provide a semiconductor laser pumped solid-state laser capable of efficiently producing solid-state laser output light so as to match the above.
[課題を解決するための手段] 上記の目的を達成するために、この発明の手段として、
アレイ半導体レーザ出力を集光し固体レーザ素子を光励
起するアレイ半導体レーザ励起固体レーザにおいて、分
布屈折率レンズをアレイ半導体レーザの各ストライプに
対応して並べ、アレイ半導体レーザ出力を集光してコリ
メートするレンズアレイと、コリメートされた各ストラ
イプ光を一括して集光して一箇所に重ね合わせ、固体レ
ーザ素子を端面励起するためのフォーカシングレンズと
して用いる第2のレンズと、からなる光結合器を備える
ものである。[Means for Solving the Problems] In order to achieve the above object, as means of the present invention,
An array semiconductor laser pumped solid-state laser that collects the array semiconductor laser output and optically pumps the solid-state laser element. In the solid-state laser, a distributed index lens is arranged corresponding to each stripe of the array semiconductor laser, and the array semiconductor laser output is collected and collimated. An optical coupler including a lens array and a second lens that collectively collects the collimated striped lights and superimposes them on one another, and that is used as a focusing lens for exciting the end face of the solid-state laser element. It is a thing.
[作用] 半導体レーザ励起固体レーザの横モードの特性は、端面
励起方式の場合、固体レーザ素子内の光励起空間の形状
で決まる。このため、単一基本横モードを得るために
は、絞った励起光の強度分布をなるべくガウス分布に近
づけ、固体レーザ素子内に一定の大きさのビームスポッ
トを安定的に作ってやることが好ましい。[Operation] The lateral mode characteristics of the semiconductor laser pumped solid-state laser are determined by the shape of the optical pumping space in the solid-state laser element in the case of the end-face pumping method. For this reason, in order to obtain a single fundamental transverse mode, it is preferable to make the intensity distribution of the narrowed excitation light as close as possible to a Gaussian distribution and to stably form a beam spot of a certain size in the solid-state laser element. .
半導体レーザ励起固体レーザの光結合器として屈折率が
中心軸から外周面に向かって放射線状に分布して異なっ
ている円柱状の光学ガラス体である分布屈折率レンズを
用いると発散角の大きい半導体レーザ光を容易に集光す
ることができる。A semiconductor with a large divergence angle when using a distributed index lens, which is a cylindrical optical glass body with a different refractive index distributed radially from the central axis to the outer peripheral surface, as an optical coupler of a semiconductor laser pumped solid-state laser. Laser light can be easily collected.
このような特性を持つ分布屈折率レンズを用いて各スト
ライプからのレーザ光を集光できることを利用し、アレ
イ半導体レーザの各々のストライプからの出射光を、分
布屈折率レンズアレイで集光し、第2のレンズで全体光
を一つのビームスポットに絞ってやり固体レーザ素子を
励起すれば、高品質の横モード光が得られる。By utilizing the fact that the laser light from each stripe can be condensed using the distributed index lens having such characteristics, the light emitted from each stripe of the array semiconductor laser is condensed by the distributed index lens array, High-quality transverse mode light can be obtained by exciting the solid-state laser device by focusing the whole light into one beam spot with the second lens.
[実施例] 以下、実施例に基づいて本発明を説明する。[Examples] Hereinafter, the present invention will be described based on Examples.
第1図はアレイ半導体レーザ光を集光し固体レーザ素子
を端面励起する固体レーザの模式図である。第1図に示
すごとく、固体レーザ素子4としてNd:YAGを用い、一方
の端面をダイクロイックコーティング(Nd:YAGレーザ発
振波長1064nmで高反射(HR)、半導体レーザ光波長808n
mで高透過(AR))し、その面を励起面とし、アウトプ
ットミラー5とで共振器を構成する。用いたアレイ半導
体レーザ1は幅が100μmの活性層ストライプ7が20本5
00μm間隔で配列したアレイからなる。集光レンズアレ
イ2は幅500μmの分布屈折率レンズ20個からなり20本
のストライプからの出射光の各々を集光しコリメートす
る。20本のレーザビームを第2のレンズ3でフォーカシ
ングし一箇所に重ね合わせて、Nd:YAGロッドからなる固
体レーザ素子4を端面励起する。FIG. 1 is a schematic diagram of a solid-state laser that condenses array semiconductor laser light and pumps a solid-state laser element on an end face. As shown in FIG. 1, Nd: YAG is used as the solid-state laser element 4, and one end face is dichroic coated (Nd: YAG laser oscillation wavelength 1064 nm with high reflection (HR), semiconductor laser light wavelength 808n).
It is highly transmissive (AR) at m, its surface is used as an excitation surface, and the output mirror 5 constitutes a resonator. The array semiconductor laser 1 used has 20 active layer stripes 7 with a width of 100 μm.
It consists of arrays arranged at intervals of 00 μm. The condenser lens array 2 is composed of 20 distributed index lenses each having a width of 500 μm, and condenses and collimates each of the emitted lights from the 20 stripes. The 20 laser beams are focused by the second lens 3 and overlapped at one location to excite the end face excitation of the solid-state laser element 4 made of an Nd: YAG rod.
このようにして端面励起した半導体レーザ励起固体レー
ザに於て、5Wの半導体レーザ(波長808nm)出力でNd:YA
Gレーザ基本波(波長1064nm)出力1.5Wの高出力発振が
得られている。In the semiconductor laser pumped solid-state laser pumped by the end face in this way, a Nd: YA laser with a 5 W semiconductor laser (wavelength 808 nm) output
High-power oscillation with a G laser fundamental wave (wavelength 1064 nm) output of 1.5 W has been obtained.
[発明の効果] 以上説明したとおり、本発明の如く、光結合器として、
上記のような構成をもつ半導体レーザ励起固体レーザ
は、従来のアレイ半導体レーザでは困難であった端面励
起を可能にし、効率が高くビーム質の良い高出力の固体
レーザを実現できる。[Effects of the Invention] As described above, as an optical coupler according to the present invention,
The semiconductor laser pumped solid-state laser having the above-mentioned configuration enables end facet pumping, which was difficult with the conventional array semiconductor laser, and realizes a high-output solid laser with high efficiency and good beam quality.
第1図はアレイ半導体レーザの各ストライプからの出射
光を分布屈折率レンズアレイを用いて集光してコリメー
トし第2のレンズでフォーカシングして一箇所に重ね合
せて光励起する半導体レーザ励起固体レーザの模式図で
ある。 図中. 1……アレイ半導体レーザ 2……分布屈折率レンズアレイ 3……レンズ 4……固体レーザ素子 5……アウトプットミラー 6……出力光 7……活性層ストライプFIG. 1 shows a semiconductor laser pumped solid-state laser in which light emitted from each stripe of an array semiconductor laser is focused by a distributed index lens array, collimated, focused by a second lens, and superposed at one location for photoexcitation. FIG. In the figure. 1 ... Array semiconductor laser 2 ... Distributed refractive index lens array 3 ... Lens 4 ... Solid-state laser element 5 ... Output mirror 6 ... Output light 7 ... Active layer stripe
Claims (1)
ザ素子を光励起するアレイ半導体レーザ励起固体レーザ
において、分布屈折率レンズをアレイ半導体レーザの各
ストライプに対応して並べ、アレイ半導体レーザ出力を
集光してコリメートするレンズアレイと、コリメートさ
れた各ストライプ光を一括して集光して一箇所に重ね合
わせ、固体レーザ素子を端面励起するためのフォーカシ
ングレンズとして用いる第2のレンズと、からなる光結
合器を備えたことを特徴とするアレイ半導体レーザ端面
励起固体レーザ。1. An array semiconductor laser pumped solid-state laser for collecting an array semiconductor laser output and optically pumping a solid-state laser device, wherein a distributed index lens is arranged corresponding to each stripe of the array semiconductor laser to collect the array semiconductor laser output. A lens array that emits light and collimates, and a second lens that collectively collects and collimates each of the striped light beams and superimposes them on one another to be used as a focusing lens for exciting the end facet of the solid-state laser element. An array semiconductor laser edge-pumped solid-state laser having an optical coupler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2154025A JPH07112083B2 (en) | 1990-06-14 | 1990-06-14 | Array semiconductor laser Edge-pumped solid-state laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2154025A JPH07112083B2 (en) | 1990-06-14 | 1990-06-14 | Array semiconductor laser Edge-pumped solid-state laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0448664A JPH0448664A (en) | 1992-02-18 |
| JPH07112083B2 true JPH07112083B2 (en) | 1995-11-29 |
Family
ID=15575263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2154025A Expired - Fee Related JPH07112083B2 (en) | 1990-06-14 | 1990-06-14 | Array semiconductor laser Edge-pumped solid-state laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07112083B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3081094B2 (en) * | 1993-10-15 | 2000-08-28 | トヨタ自動車株式会社 | Semiconductor laser and manufacturing method thereof |
| JP2988354B2 (en) * | 1996-01-22 | 1999-12-13 | 日本電気株式会社 | Laser diode pumped solid-state laser device |
| KR20000014317A (en) * | 1998-08-19 | 2000-03-06 | 구자홍 | High-output semiconductor laser diode-array structure |
| JP2004111542A (en) | 2002-09-17 | 2004-04-08 | Topcon Corp | Semiconductor laser device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6076307U (en) * | 1983-10-28 | 1985-05-28 | 三菱電機株式会社 | optical array module |
| US4901330A (en) * | 1988-07-20 | 1990-02-13 | Amoco Corporation | Optically pumped laser |
-
1990
- 1990-06-14 JP JP2154025A patent/JPH07112083B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448664A (en) | 1992-02-18 |
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