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JPH07113679B2 - Multilayer film mirror - Google Patents
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JPH07113679B2 - Multilayer film mirror - Google Patents

Multilayer film mirror

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Publication number
JPH07113679B2
JPH07113679B2 JP61068470A JP6847086A JPH07113679B2 JP H07113679 B2 JPH07113679 B2 JP H07113679B2 JP 61068470 A JP61068470 A JP 61068470A JP 6847086 A JP6847086 A JP 6847086A JP H07113679 B2 JPH07113679 B2 JP H07113679B2
Authority
JP
Japan
Prior art keywords
multilayer
film
reflectance
mirror
multilayer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61068470A
Other languages
Japanese (ja)
Other versions
JPS62226047A (en
Inventor
裕一 内海
億 久良木
恒雄 宇理須
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP61068470A priority Critical patent/JPH07113679B2/en
Publication of JPS62226047A publication Critical patent/JPS62226047A/en
Publication of JPH07113679B2 publication Critical patent/JPH07113679B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は多層膜構造を有するX線反射鏡に関するもので
ある。
The present invention relates to an X-ray reflecting mirror having a multilayer film structure.

(従来技術および発明が解決しようとする問題点) 従来の多層膜反射鏡としては第8図a)に示すように、
基板1上に軽元素薄膜2と重元素薄膜3を一定のピッチ
で交互に形成した多層膜反射鏡が一般に知られている。
この場合、反射率と反射率スペクトルの波長帯域幅の間
には一定の関係(層数を増大することにより、反射率を
増大させると波長帯域幅は逆に狭くなる)があるので、
高い反射率を維持しながら任意の波長帯域幅を得ること
はできない。また積分反射率が低い。さらに所定の波長
のX線を入射光とした場合、ブラッグ反射が起こる入射
角は非常に限られた範囲にあるので、曲面基板上に従来
の多層膜を形成した場合、反射鏡表面の各点に対するX
線の入射角がそれぞれ異なり、所定の波長のブラッグ反
射に寄与する反射面の面積は非常に狭くなってしまう。
従って所望の波長において高い反射率を得ることができ
ない。また他の例として、第8図b)に示すようなピッ
チが基板から上に向かって徐々に変化する多層膜反射鏡
があるが、一定のピッチの変化を維持しながら正確に多
層膜を形成することは困難である他、高いピーク反射率
が得られないという欠点がある。また上記従来の多層膜
反射鏡の構成材料としては、反射層の材料としてW,Re,P
t,Auなどの重素、スペーサー層の材料としてはAl,Si,C
などの軽元素が用いられていたが、この場合特に軟X線
領域において軽元素薄膜の吸収係数が大きく、反射率を
高くできないという欠点があった。また、従来の多層膜
反射鏡の製造方法であるイオンビームスパッタ法におい
ては散乱イオンが堆積膜に損傷を与えるため、極薄膜を
形成できないという欠点があった。
(Problems to be Solved by Prior Art and Invention) As shown in FIG. 8 a) as a conventional multilayer film reflecting mirror,
A multilayer-film reflective mirror in which a light element thin film 2 and a heavy element thin film 3 are alternately formed on a substrate 1 at a constant pitch is generally known.
In this case, there is a fixed relationship between the reflectance and the wavelength bandwidth of the reflectance spectrum (when the reflectance is increased by increasing the number of layers, the wavelength bandwidth is narrowed conversely).
It is not possible to obtain an arbitrary wavelength bandwidth while maintaining high reflectance. Also, the integrated reflectance is low. Furthermore, when X-rays having a predetermined wavelength are used as incident light, the incident angle at which Bragg reflection occurs is in a very limited range. Therefore, when a conventional multilayer film is formed on a curved substrate, each point on the surface of the reflecting mirror Against X
Since the incident angles of the lines are different from each other, the area of the reflecting surface that contributes to the Bragg reflection of a predetermined wavelength becomes very small.
Therefore, high reflectance cannot be obtained at a desired wavelength. As another example, there is a multilayer film reflecting mirror in which the pitch gradually changes from the substrate upward as shown in FIG. 8B), but the multilayer film is formed accurately while maintaining a constant pitch change. In addition to being difficult to achieve, there is a drawback that a high peak reflectance cannot be obtained. Further, as the constituent material of the above-mentioned conventional multilayer film reflecting mirror, W, Re, P
Al, Si, C as materials for the heavy and spacer layers such as t, Au
However, in this case, the light element thin film has a large absorption coefficient especially in the soft X-ray region, and there is a drawback that the reflectance cannot be increased. Further, the ion beam sputtering method, which is a conventional method for manufacturing a multilayer-film reflective mirror, has a drawback that an extremely thin film cannot be formed because scattered ions damage the deposited film.

(問題点を解決するための手段) 本発明は、従来技術の上記した諸問題を解決し、高い反
射率を有し、反射率スペクトルの帯域幅が任意かつ容易
に設定でき、しかし曲面構造とした場合にも高い反射率
の得られる多層膜反射鏡を提供することを目的とする。
(Means for Solving the Problems) The present invention solves the above-mentioned problems of the prior art, has a high reflectance, and the bandwidth of the reflectance spectrum can be arbitrarily and easily set, but has a curved surface structure. An object of the present invention is to provide a multilayer-film reflective mirror that can obtain high reflectance even in the case of doing so.

本発明は上記目的を達成するために、多層膜反射鏡の構
造として、ピッチの異なる単位多層膜を複数種積層した
ものとすることにより、X線露光に適切な波長帯域幅を
自由かつ容易に選択できるとともに、曲面構造とした場
合高い反射率が得られるものである。また、多層膜構成
元素によるX線の長波長側の吸収をなるべく小さくし、
広い波長領域にわたって高い反射率を得るために、各々
の該単位多層膜のピッチを基板側から上に向かって順に
増大した構造としている。また、多層膜反射鏡の軽元素
薄膜の構成材料として、BあるいはBeを用いることによ
り、反射鏡の反射率を高くしていることを本発明の主な
特徴とする。
In order to achieve the above object, the present invention provides a multilayer film reflecting mirror structure in which a plurality of types of unit multilayer films having different pitches are laminated, so that a wavelength bandwidth suitable for X-ray exposure can be freely and easily obtained. In addition to being selectable, a curved surface structure provides high reflectance. Further, absorption of X-rays on the long wavelength side by the constituent elements of the multilayer film is minimized,
In order to obtain a high reflectance over a wide wavelength range, the pitch of each unit multilayer film is sequentially increased from the substrate side to the upper side. Further, the main feature of the present invention is to increase the reflectance of the reflecting mirror by using B or Be as a constituent material of the light element thin film of the multilayer-film reflecting mirror.

次に本発明の実施例を説明する。Next, examples of the present invention will be described.

なお実施例は一つの例示であって、本発明の精神を逸脱
しない範囲で種々の変更あるいは改良を行いうることは
言うまでもない。
Needless to say, the embodiment is merely an example, and various modifications and improvements can be made without departing from the spirit of the present invention.

第1図に本発明による多層膜反射鏡の一実施例を示す。
基板1上に反射層である厚さAnの重元素薄膜4と、スペ
ーサー層である厚さBnの軽元素薄膜5から成るピッチdn
の2層膜をNn層重ねた周期的な単位多層膜6を基板1側
から順にM個積層したものである。該多層膜反射鏡の光
学特性の原理をM=2の場合を例にあげて説明する。所
定のピッチの多層膜は、一定のピーク波長と帯域幅から
なるX線を高い反射率で反射することが知られている。
従って、第1図に示すような構造において、M=2の場
合、即ちピッチの異なる単位多層膜の2個を積層した多
層膜反射鏡は各々の単位多層膜に対応する異なる中心波
長λ1,λ2にピークを有するスペクトル7,8を合成した
広い波長領域にわたり高い反射率を実現し得る(第2図
実線)。このような構造の多層膜反射鏡の特徴は、広い
波長領域にわたり高い反射率を有する特性、即ち高い積
分反射率を有するスペクトル特性が実現できることと、
ピッチdn,重元素薄膜の膜厚An,軽元素薄膜の膜厚Bn,積
み重ね数Mの値をそれぞれ変化させることにより、所望
の波長帯域幅を設定できること、および波長帯域幅が広
いために後に説明するように入射角の許容範囲が広く、
曲面構造とした場合でも高い反射率が得られることであ
る。
FIG. 1 shows an embodiment of the multilayer-film reflective mirror according to the present invention.
A pitch dn composed of a heavy element thin film 4 having a thickness An, which is a reflection layer, and a light element thin film 5 having a thickness Bn, which is a spacer layer, on a substrate 1.
In this example, M pieces of the periodic unit multilayer film 6 in which Nn layers of the above two-layer film are stacked are sequentially laminated from the substrate 1 side. The principle of optical characteristics of the multilayer-film reflective mirror will be described by taking the case of M = 2 as an example. It is known that a multilayer film having a predetermined pitch reflects X-rays having a constant peak wavelength and a constant bandwidth with high reflectance.
Therefore, in the structure as shown in FIG. 1, in the case of M = 2, that is, the multi-layer film reflecting mirror in which two unit multi-layer films having different pitches are laminated has different center wavelengths λ1 and λ2 corresponding to the respective unit multi-layer films. A high reflectance can be realized over a wide wavelength range by combining the spectra 7 and 8 having a peak at (7, solid line in FIG. 2). The characteristics of the multilayer film reflecting mirror having such a structure are that a characteristic having a high reflectance over a wide wavelength range, that is, a spectral characteristic having a high integrated reflectance can be realized,
The desired wavelength band width can be set by changing the values of the pitch dn, the film thickness An of the heavy element thin film, the film thickness Bn of the light element thin film, and the number M of stacks. Has a wide range of incident angles,
Even if it has a curved structure, a high reflectance can be obtained.

本実施例における多層膜反射鏡の構造、構成材料及びそ
の光学特性についてさらに詳細な説明を行う。
The structure, constituent materials, and optical characteristics of the multilayer-film reflective mirror in this example will be described in more detail.

光源の長波長成分は短波長成分よりも多層膜の構成材料
に吸収されやすいので、短波長側に反射率スペクトルの
ピーク波長を有する単位多層膜から、即ちピッチdnの小
さい単位多層膜から順に上に向かってピッチdnが増大す
るように基板上に積層することにより、長波長成分が上
層の単位多層膜で、短波長成分が下層の単位多層膜で主
に反射されるために吸収の影響を小さくでき、より高い
反射率が実現できる。
Since the long wavelength component of the light source is more easily absorbed by the constituent material of the multilayer film than the short wavelength component, the unit multilayer film having the peak wavelength of the reflectance spectrum on the short wavelength side, that is, the unit multilayer film with the smallest pitch dn By stacking on the substrate so that the pitch dn increases toward, the long wavelength component is mainly reflected by the upper unit multilayer film and the short wavelength component is reflected by the lower unit multilayer film, so that the influence of absorption is reduced. It can be made smaller and a higher reflectance can be realized.

さらに本発明における多層膜反射鏡では軽元素薄膜の材
料として、BあるいはBeを用いることを特徴とする。以
下にその効果について説明する。多層膜構成材料の複素
屈折率を1−δ−iβとした場合、多層膜界面における
複素振幅反射率は入射角αが一定の条件下では(△δ+
i△β)に比例する。ただしΔδとΔβは重元素薄膜と
軽元素薄膜の屈折率及び吸収係数の差である。また、よ
り高いピーク反射率を得るためにはスペーサー層材料に
よる軟X線の吸収は小さいほうが望ましい。第3図に1
〜1000Åの波長領域における各種元素の吸収係数μを示
す。X線の露光に重要な軟X線領域においては、Bある
いはBeの吸収係数は従来スペーサー層材料として広く用
いられているCの吸収係数に比べ低い値を示している。
Beの吸収係数は特にCの吸収係数との差が著しい。また
屈折率に関しても軟X線領域についてBあるいはBeの屈
折率はCに比べて低い値を示している(文献、ピー・エ
ル・ヘンケ他“Atomic Data and Nuclear Data Tables
(1982)”第27巻)。従って、従来スペーサー層材料に
一般的に用いられているCの代わりにBあるいはBeを用
いることにより軟X線領域において△δ及び△βが増大
し、かつスペーサー層材料による軟X線の吸収が低減す
るので非常に高い反射率が得られる。例えば本発明者の
計算によれば、W/Be多層膜反射鏡はピーク波長λp=11
ÅにおいてW/C多層膜反射鏡と比較し、2倍近くのピー
ク反射率が得られる。
Further, the multilayer mirror in the present invention is characterized in that B or Be is used as the material of the light element thin film. The effect will be described below. When the complex refractive index of the multilayer film constituent material is 1-δ-iβ, the complex amplitude reflectance at the interface of the multilayer film is (Δδ +
It is proportional to iΔβ). However, Δδ and Δβ are the differences in the refractive index and the absorption coefficient between the heavy element thin film and the light element thin film. Further, in order to obtain a higher peak reflectance, it is desirable that the absorption of soft X-rays by the spacer layer material is small. 1 in FIG.
Shows the absorption coefficient μ of various elements in the wavelength range of ~ 1000Å. In the soft X-ray region important for X-ray exposure, the absorption coefficient of B or Be is lower than the absorption coefficient of C which has been widely used as a conventional spacer layer material.
The absorption coefficient of Be is significantly different from that of C. Regarding the refractive index, the refractive index of B or Be is lower than that of C in the soft X-ray region (reference, P. L. Henke et al. “Atomic Data and Nuclear Data Tables”).
(1982), Vol. 27. Therefore, by using B or Be instead of C which is generally used for the conventional spacer layer material, Δδ and Δβ are increased in the soft X-ray region, and the spacer is Since the absorption of soft X-rays by the layer material is reduced, a very high reflectance can be obtained.For example, according to the calculation by the present inventor, the W / Be multilayer mirror has a peak wavelength λp = 11.
Compared with the W / C multilayer mirror in Å, the peak reflectance of nearly double is obtained.

さらに本発明による多層膜反射鏡の特徴として、該多層
膜反射鏡を構成しているM種の単位多層膜がそれぞれ最
大のピーク反射率が得られるような最適のAn/dn比を有
していることがあげられる。従って、所定の波長帯域幅
の軟X線に対し最大のピーク反射率を得ることができ
る。本発明の1実施例として提案した第1図の構造を有
するW/Be多層膜反射鏡(M=2)について反射率スペク
トルを計算すると、第4図の実線9で示されるようなス
ペクトルが得られた。比較として、従来型のW/C多層膜
反射鏡の反射率スペクトルを破線10で示す(第1表、両
多層膜反射鏡の設計パラメータとピーク反射率RP,波
長帯域幅△λ/λ,積分反射率IR)。本発明で提案した
多層膜反射鏡(M=2)においては従来の周期的構造の
多層膜反射鏡(M=1)と比べ、約3倍高い積分反射率
が得られる。
Further, as a feature of the multilayer-film reflective mirror according to the present invention, each of the M type unit multilayer films constituting the multilayer-film reflective mirror has an optimum An / dn ratio such that a maximum peak reflectance can be obtained. Can be mentioned. Therefore, it is possible to obtain the maximum peak reflectance with respect to the soft X-ray having the predetermined wavelength band. When the reflectance spectrum of the W / Be multilayer film reflecting mirror (M = 2) having the structure of FIG. 1 proposed as one embodiment of the present invention is calculated, a spectrum as shown by the solid line 9 in FIG. 4 is obtained. Was given. For comparison, the reflectance spectrum of the conventional W / C multilayer mirror is shown by a broken line 10 (Table 1, design parameters of both multilayer mirrors and peak reflectance RP, wavelength bandwidth Δλ / λ, integral Reflectance IR). The multilayer reflector (M = 2) proposed by the present invention has an integrated reflectance about three times higher than that of the conventional multilayer reflector (M = 1) having a periodic structure.

以上のような多層膜反射鏡のスペーサー層材料にBある
いはBeのような、Cと比較して吸収係数の小さい軽元素
を用いた検討は、波長λ=124Åにおいてかつてなされ
た事があった(文献、ティー・ダブリュー・バービー・
ジュニア・エックス・レイ・マイクロ・スコピイ、“X
−Ray Microscopy,editated by G.Schmahl and D.Rudol
ph,(Springer−Verlag,1984)"p144〜162)。しかしな
がらX線露光を行う上で特に重要な、より短波長側の軟
X線領域において、多層膜反射鏡の構造やAn/dn比も含
めた検討に関しては全くなされておらず、また本発明に
おけるようなピッチの異なる多層膜の積層構造に関する
提案は全くなされていない。
The above-mentioned examination using a light element such as B or Be having a smaller absorption coefficient than C as the spacer layer material of the multilayer film reflection mirror has been made at a wavelength λ = 124 Å. Literature, T. W. Barbie
Junior X Ray Micro Skopy, "X
-Ray Microscopy, editated by G.Schmahl and D.Rudol
ph, (Springer-Verlag, 1984) "p144-162). However, in the soft X-ray region on the shorter wavelength side, which is particularly important for X-ray exposure, the structure of the multilayer mirror and the An / dn ratio are also No consideration has been given to the included studies, and no proposal has been made to the laminated structure of multilayer films having different pitches as in the present invention.

なお、以上の説明において多層膜反射鏡は平面鏡である
としたが、これを曲面とすることによりX線を集光する
ことができ、反射X線の強度を増大することができる。
本発明による積層構造の多層膜反射鏡は広い反射率スペ
クトル帯域幅を与えるため、広い範囲のブラッグ角αに
わたって高い反射率を与えることを意味する。従って、
入射角及び出射角に一定の広がりのある曲面多層膜反射
鏡の構造に適している。この点については以下に詳細に
説明する。
Although the multilayer-film reflective mirror is a plane mirror in the above description, the curved surface can collect X-rays and increase the intensity of the reflected X-rays.
Since the multilayer mirror having a laminated structure according to the present invention provides a wide reflectance spectral bandwidth, it is meant to provide a high reflectance over a wide Bragg angle α. Therefore,
It is suitable for the structure of a curved-surface multilayer film reflecting mirror having a certain spread in the incident angle and the outgoing angle. This point will be described in detail below.

第5図は本発明による多層膜反射鏡の第2の実施例を示
すもので、曲率半径Rのシリンドリカル面基板11上に多
層膜12を形成した曲面多層膜反射鏡の断面図である。こ
こにおいて多層膜12の構造は第1図の実施例に示すよう
な単位多層膜を複数積層したものとする。この反射鏡に
平行X線13が鏡面上の点14に視射角θで入射し、反射さ
れるとする。このとき反射光は第6図17に示すようにピ
ーク波長がλP1であり、波長帯域幅が△λ/λの反射率
スペクトルを有する。ところが反射点の位置が14からず
れると、反射率スペクトルのピーク波長も変化し、波長
λP1における反射率も減少する。さらに反射点の位置が
ずれると反射率スペクトルは第6図18で示されるように
λP1の反射率は0となる。この位置の反射点を15とし、
14と15の間の距離をLとする。即ち第5図の視射角がθ
からθ−△θに変化するに伴い、反射光の反射率スペク
トルは第6図17から18へと変化する。ただし、第5図14
からLだけ離れた15と反対側の位置にも波長λP1におけ
る反射率が0となる点が存在する。従って、14を中心と
し、2Lの範囲にある反射点からの反射光の総和が焦点16
におけるλP1の反射強度となる。この場合、反射率スペ
クトルの△λ/λが広い程Lが長くなり、16における波
長λP1の強度が増大する。本発明による多層膜反射鏡は
△λ/λが従来の周期的構造(M=1)の反射鏡に比べ
て大きく、反射率も高いので焦点16における波長λP1の
反射光の強度が大きい。このことは、λP1以外の波長で
も言えることなので、結局強度の大きな反射光が焦点16
で得られる。本発明による多層膜反射鏡の一例である
(i)W/Be多層膜反射鏡(M=2)と(ii)従来構造の
W/C多層膜反射鏡(M=1)について、Lの長さ(λP1
=11Å)を比較する。(i),(ii)それぞれλP1=11
Åにおいて反射率スペクトルが20%程度のピーク反射率
を有する場合、△λ/λは(i)で24%、(ii)で6%
程度である。ただし、(i)はd1=37Å,d2=43Å、(i
i)はd=39.5Åである。この場合、点14と15における
視射角の差を△θとすると、LはR・△θ・π/180で表
され、(i)は(ii)の約4倍のLを有する。従って、
焦点16におけるλP1=10Åの強度は(i)が(ii)の約
4倍大きい。この傾向は軟X線領域における他の波長λ
P1についても言えることである。
FIG. 5 shows a second embodiment of the multilayer-film reflective mirror according to the present invention, and is a sectional view of a curved multilayer-film reflective mirror in which a multilayer film 12 is formed on a cylindrical surface substrate 11 having a radius of curvature R. Here, the structure of the multilayer film 12 is assumed to be a stack of a plurality of unit multilayer films as shown in the embodiment of FIG. It is assumed that parallel X-rays 13 are incident on the reflecting mirror at a point 14 on the mirror surface at a glancing angle θ and are reflected. At this time, the reflected light has a reflectance spectrum having a peak wavelength of λP1 and a wavelength bandwidth of Δλ / λ, as shown in FIG. However, when the position of the reflection point deviates from 14, the peak wavelength of the reflectance spectrum also changes, and the reflectance at the wavelength λP1 also decreases. When the position of the reflection point is further shifted, the reflectance spectrum has a reflectance of 0 at λP1 as shown in FIG. The reflection point at this position is 15,
Let L be the distance between 14 and 15. That is, the glancing angle in FIG. 5 is θ
From .theta .-. DELTA..theta., The reflectance spectrum of the reflected light changes from FIG. 17 to FIG. However, in FIG.
There is also a point where the reflectance at the wavelength λP1 is 0 at a position opposite to 15 apart from L by. Therefore, the total of the reflected light from the reflection points in the range of 2L centering on 14 is the focus 16
Is the reflection intensity of λP1 at. In this case, the wider Δλ / λ of the reflectance spectrum is, the longer L is, and the intensity of the wavelength λP1 at 16 is increased. The multilayer mirror according to the present invention has a larger Δλ / λ than a conventional mirror having a periodic structure (M = 1) and a high reflectance, so that the intensity of the reflected light of the wavelength λP1 at the focus 16 is large. This is true even for wavelengths other than λP1, so after all, the reflected light with high intensity is focused 16
Can be obtained at. An example of the multilayer-film reflective mirror according to the present invention is (i) W / Be multilayer-film reflective mirror (M = 2) and (ii) conventional structure.
For W / C multilayer mirror (M = 1), length of L (λP1
= 11Å) are compared. (I) and (ii) λP1 = 11 respectively
When the reflectance spectrum in Å has a peak reflectance of about 20%, Δλ / λ is 24% for (i) and 6% for (ii).
It is a degree. However, (i) is d1 = 37Å, d2 = 43Å, (i
In i), d = 39.5Å. In this case, if the difference in the glancing angles at points 14 and 15 is Δθ, L is represented by R · Δθ · π / 180, and (i) has L which is about four times as large as (ii). Therefore,
The intensity of λP1 = 10Å at the focal point 16 is (i) about four times larger than (ii). This tendency is due to other wavelengths λ in the soft X-ray region.
The same is true for P1.

これまでは、本発明による多層膜反射鏡の実施例につい
て説明してきたが、次に該多層膜反射鏡の製造方法につ
いての一例を示す。第7図は多層膜反射鏡の製造方法に
ついての一例である。まず、原子線発生の原理を第7図
を用いて説明する。原子線源内にガス導入口19からArガ
スを10-2〜10-3torr程度導入し、アノード電極20に3〜
9kv程度の高電圧を印加すると、アノード電極20,カソー
ド電極21,22間でグロー放電が開始される。カソード電
極21,22の表面から放出した電子は中央のアノード電極2
0を中心に高周波振動する。原子線源内では振動してい
る電子とAr原子が衝突することによって大量のイオンが
生成される。該イオンはカソード21,22に向けて加速さ
れる。カソード付近は衝突断面積の大きな電子が存在し
ているので、数kvで加速されたイオンと容易に結合しイ
オンと同程度のエネルギーを有する原子線23となりビー
ム放出口24より取りだされる。
So far, the embodiments of the multilayer-film reflective mirror according to the present invention have been described. Next, an example of a method for manufacturing the multilayer-film reflective mirror will be described. FIG. 7 shows an example of a method for manufacturing a multilayer-film reflective mirror. First, the principle of atomic beam generation will be described with reference to FIG. Ar gas of about 10 -2 to 10 -3 torr was introduced into the atomic beam source through the gas inlet 19 and the anode electrode 20 was charged with 3 to 3
When a high voltage of about 9 kv is applied, glow discharge is started between the anode electrode 20 and the cathode electrodes 21, 22. The electrons emitted from the surfaces of the cathode electrodes 21 and 22 are the central anode electrode 2
High frequency vibration around 0. In the atomic beam source, a large number of ions are generated by collision of oscillating electrons with Ar atoms. The ions are accelerated towards the cathodes 21,22. Since electrons having a large collision cross-section exist near the cathode, they are easily combined with the ions accelerated at several kv and become atomic beams 23 having the same energy as the ions, which are taken out from the beam emission port 24.

本発明に係る多層膜反射鏡の製造方法は、該原子線源を
用いて得られたAr原子線23をターゲットである多層膜構
成材料25に当て、飛び出したスパッタ粒子26を基板27上
に堆積させ、膜形成することによって行うものである。
なお、重元素薄膜と軽元素薄膜の形成はターゲットを交
互に交換しながら行う。
The method for manufacturing a multilayer-film reflective mirror according to the present invention applies an Ar atomic beam 23 obtained by using the atomic beam source to a multilayer-film constituent material 25 as a target, and sputtered sputtered particles 26 are deposited on a substrate 27. Then, the film is formed.
The heavy element thin film and the light element thin film are formed by alternately exchanging the targets.

このような多層膜反射鏡製造方法の特徴は、界面の凹凸
の少ない平滑な多層膜が形成できることである。本発明
者らのX線回折(Cu−Kα線)を用いた多層膜界面の評
価結果では凹凸が1Å程度であった。従って、極めて平
滑な多層膜が形成されていることが判明した。さらに、
この方法の特徴として、極薄の連続膜が形成できること
である。透過型電子顕微鏡による多層膜及び単層膜の観
察結果から、該製造方法によりW,Beそれぞれ10Å程度の
薄膜が形成されていることが判明した。Wを例にとれば
従来形成された連続薄膜の最小厚さは30Åであるから、
この製造方法により極めて薄い薄膜が形成しうることが
わかる。またスパッタ速度が非常に安定していることか
ら(本発明者らの測定では変動は毎時1Å以下)、膜厚
制御性の非常に良い方法といえる。さらにBeを多層膜の
スペーサー層構成材料として用いた場合、スパッタ速度
が大きい(本発明者らの測定では、Beのスパッタ速度
は、1.74Å/分であり、Cのスパッタ速度:0.38Å/分
の約2倍)ために、短時間のうちに多層膜反射鏡を作成
することができる。以上のことから、この多層膜反射鏡
製造方法により、多層膜の界面が極めて平滑な多層膜反
射鏡、即ちX線の多層膜界面での散乱が極めて少なく、
理論値に近い反射率を有する多層膜反射鏡を製造するこ
とができる。また製作精度の良い微細なピッチを有する
多層膜反射鏡を製造することができる。
A feature of such a multilayer-film reflective mirror manufacturing method is that a smooth multilayer film with few irregularities at the interface can be formed. As a result of the evaluation of the multilayer film interface using the X-ray diffraction (Cu-Kα ray) by the present inventors, the unevenness was about 1Å. Therefore, it was found that an extremely smooth multilayer film was formed. further,
A feature of this method is that an extremely thin continuous film can be formed. From the observation result of the multilayer film and the single layer film by the transmission electron microscope, it was found that the manufacturing method formed a thin film of about 10 Å for each of W and Be. Taking W as an example, the minimum thickness of a continuous thin film formed conventionally is 30Å,
It is understood that an extremely thin thin film can be formed by this manufacturing method. Further, since the sputtering rate is very stable (the fluctuation of 1 hour or less per hour in the measurement by the inventors), it can be said that the method has a very good film thickness controllability. Further, when Be is used as the material for forming the spacer layer of the multilayer film, the sputter rate is high (the Sputter rate of Be was 1.74Å / min, and the sputter rate of C was 0.38Å / min according to the measurement by the present inventors). Therefore, a multilayer film reflecting mirror can be produced in a short time. From the above, according to the method for producing a multilayer film mirror, a multilayer film mirror having an extremely smooth multilayer film interface, that is, scattering of X-rays at the multilayer film interface is extremely small,
It is possible to manufacture a multilayer-film reflective mirror having a reflectance close to the theoretical value. Further, it is possible to manufacture a multilayer-film reflective mirror having a fine pitch with good manufacturing accuracy.

(発明の効果) 本発明による多層膜反射鏡は反射率が多角、スペクトル
帯域幅の制御が可能であるので各種の分光素子、帯域フ
ィルターとして有用である。また特にX線リソグラフィ
ーにとって重要な軟X線領域において本発明によるW/Be
多層膜反射鏡は広い視射角にわたって大きな反射率が得
られるので、軟X線を集光した場合、従来型の多層膜反
射鏡に比べ、数倍高い反射光強度を得ることができる。
従って、X線リソグラフィーに適用した場合大幅に露光
時間を短縮でき、微細パターン形成の際の解像度が向上
するので、集光反射鏡として有用である。さらに、比較
的簡単に多層膜の波長帯域幅を自由に変えることができ
る。
(Effects of the Invention) The multilayer-film reflective mirror according to the present invention is useful as various spectroscopic elements and band filters because it has a multiplicity of reflectance and a controllable spectral bandwidth. Further, in the soft X-ray region which is particularly important for X-ray lithography, the W / Be according to the present invention is
Since the multi-layered film reflecting mirror can obtain a large reflectance over a wide viewing angle, when the soft X-ray is focused, it is possible to obtain a reflected light intensity several times higher than that of the conventional multi-layered film reflecting mirror.
Therefore, when applied to X-ray lithography, the exposure time can be greatly shortened, and the resolution in forming a fine pattern is improved, which is useful as a condenser reflecting mirror. Furthermore, the wavelength bandwidth of the multilayer film can be freely changed relatively easily.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明による多層膜反射鏡の一実施例の構造を
示す立体図、第2図は本発明による多層膜反射鏡の光学
特性の原理を説明する図、第3図は各元素の吸収係数の
波長依存性を示す図、第4図は本発明による多層膜反射
鏡の反射率スペクトルを示す図、第5図は本発明による
多層膜反射鏡の他の実施例を示すもので、シリンドリカ
ル多層膜反射鏡とこれによるX線の集光状態を示す図、
第6図はシリンドリカル多層膜反射鏡の反射率スペクト
ル特性を説明する図、第7図は本発明にかかる多層膜反
射鏡の製造方法の一例、第8図は従来の多層膜反射鏡の
構造を示す。 1……基板 2……スペーサー層 3……反射層 4……反射層 5……スペーサー層 6……単位多層膜 7……反射率スペクトル 8……反射率スペクトル 9……W/Be多層膜反射鏡(M=2)の反射率スペクトル 10……W/C多層膜反射鏡(M=1)の反射率スペクトル 11……シリンドリカル面基板 12……本発明による多層膜反射鏡 13……入射X線 14……反射点 15……反射点 16……焦点 17……反射率スペクトル 18……反射率スペクトル 19……ガス導入口 20……アノード電極 21……カソード電極 22……カソード電極 23……原子線 24……ビーム放出口 25……多層膜構成材料 26……スパッタ粒子 27……基板
FIG. 1 is a three-dimensional view showing the structure of one embodiment of the multilayer-film reflective mirror according to the present invention, FIG. 2 is a diagram for explaining the principle of optical characteristics of the multilayer-film reflective mirror according to the present invention, and FIG. FIG. 4 is a diagram showing the wavelength dependence of the absorption coefficient, FIG. 4 is a diagram showing the reflectance spectrum of the multilayer-film reflective mirror according to the present invention, and FIG. 5 is another example of the multilayer-film reflective mirror according to the present invention. A diagram showing a cylindrical multilayer reflecting mirror and a state of condensing X-rays by the reflecting mirror,
FIG. 6 is a diagram for explaining the reflectance spectrum characteristics of a cylindrical multilayer mirror, FIG. 7 is an example of a method for manufacturing a multilayer mirror according to the present invention, and FIG. 8 is a structure of a conventional multilayer mirror. Show. 1 ... Substrate 2 ... Spacer layer 3 ... Reflective layer 4 ... Reflective layer 5 ... Spacer layer 6 ... Unit multilayer film 7 ... Reflectance spectrum 8 ... Reflectance spectrum 9 ... W / Be multilayer film Reflectance spectrum of reflecting mirror (M = 2) 10 …… W / C Reflecting spectrum of multilayer film reflecting mirror (M = 1) 11 …… Cylindrical surface substrate 12 …… Multilayer film reflecting mirror 13 …… Injection according to the present invention X-ray 14 …… Reflecting point 15 …… Reflecting point 16 …… Focus 17 …… Reflectance spectrum 18 …… Reflectance spectrum 19 …… Gas inlet 20 …… Anode electrode 21 …… Cathode electrode 22 …… Cathode electrode 23 ...... Atomic beam 24 …… Beam emission port 25 …… Multilayer film material 26 …… Sputtered particles 27 …… Substrate

フロントページの続き (56)参考文献 特開 昭60−7400(JP,A) 特開 昭61−42815(JP,A) Proceeding of the Society of Photo−Op tical Instrumentati on Engineers,Vol.563 (1985)(米)「論文名;Layered Synthetic Microstr uctures for Solar E UV Telescopes」(発表者: Ritva A.M.Keski−Kuh a 他Continuation of the front page (56) Reference JP-A-60-7400 (JP, A) JP-A-61-42815 (JP, A) Proceeding of the Society of Photo-Optical Instrumentation on Engineers, Vol. 563 (1985) (US) "Paper name; Layered Synthetic Microstructures for Solar EU UV Telescopes" (presenter: Ritva AM Keski-Kuha et al.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基板上に重元素薄膜と軽元素薄膜を交互に
重ねることによって得られる多層膜反射鏡において、多
層膜の構造として、所定ピッチと層数からなる多層膜を
単位多層膜として、ピッチと層数が異なる複数個の該単
位多層膜を複数個ピッチの小さい単位多層膜から順に上
に向かってピッチが増大するように基板上に積層するこ
とを特徴とする多層膜反射鏡。
1. A multi-layered film mirror obtained by alternately stacking a heavy element thin film and a light element thin film on a substrate, wherein a multi-layered film having a predetermined pitch and a predetermined number of layers is used as a unit multi-layered film. A multilayer film reflecting mirror, characterized in that a plurality of unit multilayer films having different pitches and the number of layers are laminated on a substrate in such a manner that a plurality of unit multilayer films having smaller pitches are sequentially increased upward.
【請求項2】基板が曲面であることを特徴とする特許請
求の範囲第1項記載の多層膜反射鏡。
2. The multilayer-film reflective mirror according to claim 1, wherein the substrate has a curved surface.
【請求項3】前記軽元素薄膜の材質としてBあるいはBe
を用いたことを特徴とする特許請求の範囲第1項又は第
2項記載の多層膜反射鏡。
3. The material of the light element thin film is B or Be.
The multilayer film reflecting mirror according to claim 1 or 2, characterized in that
JP61068470A 1986-03-28 1986-03-28 Multilayer film mirror Expired - Fee Related JPH07113679B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61068470A JPH07113679B2 (en) 1986-03-28 1986-03-28 Multilayer film mirror

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61068470A JPH07113679B2 (en) 1986-03-28 1986-03-28 Multilayer film mirror

Publications (2)

Publication Number Publication Date
JPS62226047A JPS62226047A (en) 1987-10-05
JPH07113679B2 true JPH07113679B2 (en) 1995-12-06

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ID=13374607

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Application Number Title Priority Date Filing Date
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Country Link
JP (1) JPH07113679B2 (en)

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Publication number Priority date Publication date Assignee Title
JP2648599B2 (en) * 1987-10-06 1997-09-03 キヤノン株式会社 Method of making multilayer reflector for X-ray or vacuum ultraviolet
JPH01213599A (en) * 1988-02-23 1989-08-28 Nippon Telegr & Teleph Corp <Ntt> Reflection type diffraction grating
FR2653234A1 (en) * 1989-10-13 1991-04-19 Philips Electronique Lab DEVICE OF THE MIRROR TYPE IN THE FIELD OF X-UV RAYS.
JP3600849B2 (en) * 2001-06-11 2004-12-15 理学電機工業株式会社 Multilayer spectroscopy device for boron X-ray fluorescence analysis
JP5311757B2 (en) * 2007-03-29 2013-10-09 キヤノン株式会社 Reflective optical element, exposure apparatus, and device manufacturing method
US20120328082A1 (en) * 2010-06-01 2012-12-27 Canon Kabushiki Kaisha X-ray mirror, method of producing the mirror, and x-ray apparatus
EP2607935B1 (en) * 2011-12-22 2014-10-29 Markus Aspelmeyer Substrate transferred monocrystalline Bragg mirrors
WO2015039705A1 (en) * 2013-09-23 2015-03-26 Carl Zeiss Smt Gmbh Multilayer mirror
FR3059434B1 (en) 2016-11-29 2019-05-17 Centre National De La Recherche Scientifique - Cnrs SPECTRAL SELECTION COMPONENT FOR XUV RADIATIONS

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US4693933A (en) * 1983-06-06 1987-09-15 Ovonic Synthetic Materials Company, Inc. X-ray dispersive and reflective structures and method of making the structures
JPS6142815A (en) * 1984-08-06 1986-03-01 住友電気工業株式会社 Manufacturing method of dielectric film

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* Cited by examiner, † Cited by third party
Title
ProceedingoftheSocietyofPhoto−OpticalInstrumentationEngineers,Vol.563(1985)(米)「論文名;LayeredSyntheticMicrostructuresforSolarEUVTelescopes」(発表者:RitvaA.M.Keski−Kuha他

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