JPH07115161B2 - Method for joining silicon single crystal and metallic material - Google Patents
Method for joining silicon single crystal and metallic materialInfo
- Publication number
- JPH07115161B2 JPH07115161B2 JP61250017A JP25001786A JPH07115161B2 JP H07115161 B2 JPH07115161 B2 JP H07115161B2 JP 61250017 A JP61250017 A JP 61250017A JP 25001786 A JP25001786 A JP 25001786A JP H07115161 B2 JPH07115161 B2 JP H07115161B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- metal
- coefficient
- low
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 30
- 229910052710 silicon Inorganic materials 0.000 title claims description 30
- 239000010703 silicon Substances 0.000 title claims description 30
- 239000013078 crystal Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 15
- 238000005304 joining Methods 0.000 title claims description 14
- 239000007769 metal material Substances 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 238000005219 brazing Methods 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910001374 Invar Inorganic materials 0.000 description 11
- 238000001816 cooling Methods 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は強度が小さくかつ機械加工が困難なシリコン単
結晶を、強度の高い或いは機械加工の容易な金属材料に
接合するための方法に関する。TECHNICAL FIELD The present invention relates to a method for bonding a silicon single crystal having low strength and difficult to machine to a metal material having high strength or easy to machine.
〈従来の技術〉 シリコン単結晶は、一般に薄板（ウェハ）形状として取
扱われ、半導体デバイスや機械的な用途に用いられる
が、脆性を有し、強度が小さくしかも複雑な機械加工が
困難であるため、他の部材への取付の便宜や冷却の目的
でウェハ単独ではなく機械加工が可能な一般の金属材料
と組合わせて使用される場合が多い。そのような場合の
接合方法としては、機械的な締結、有機接着剤を用いた
接着、ガラスによる融接、はんだ付けなどが用いられて
いる。<Prior Art> A silicon single crystal is generally handled as a thin plate (wafer) shape and used for semiconductor devices and mechanical applications. However, it has brittleness, low strength, and complicated machining is difficult. In many cases, the wafer is used not only by itself but also in combination with a general metal material that can be machined for the convenience of attachment to other members and the purpose of cooling. As a joining method in such a case, mechanical fastening, adhesion using an organic adhesive, fusion welding with glass, soldering and the like are used.
しかしながら、機械的な締結については、シリコン単結
晶自体の機械強度が小さいため、その締結強度が低く、
また材料的に接合されていないため、熱伝導性や電気伝
導性が劣る。有機接着剤を用いた接着についても、耐熱
性が低い、接合強度が小さい、耐久性が低い、熱伝導性
或いは電気伝導性が悪い等の欠点がある。ガラスによる
融接については、接合部そのものが脆いため、温度変化
によるシリコンと接合材料との間の寸法変化の差により
容易に破壊するという問題がある。また、接合強度その
ものも低く、熱伝導性が電気伝導性も悪い。はんだ付け
は、低融点の材料を使用するため、耐熱性が低く、また
低温で処理するため接合界面での密着性（濡れ性）が悪
く接合の信頼性が低い。特開昭55−93230号公報には、
はんだ中に熱膨脹率の低い金属製網状体を介在させる技
術が開示されている。However, for mechanical fastening, the mechanical strength of the silicon single crystal itself is small, so the fastening strength is low,
Moreover, since they are not joined in terms of material, they have poor thermal conductivity and electrical conductivity. Bonding using an organic adhesive also has drawbacks such as low heat resistance, low bonding strength, low durability, and poor thermal conductivity or electrical conductivity. In fusion welding with glass, since the joint itself is fragile, there is a problem that it is easily broken due to the difference in dimensional change between silicon and the joint material due to temperature change. Further, the bonding strength itself is low, and the thermal conductivity and the electrical conductivity are poor. Since soldering uses a low melting point material, it has low heat resistance, and since it is processed at a low temperature, adhesion (wettability) at the bonding interface is poor and bonding reliability is low. In JP-A-55-93230,
A technique of interposing a metal net-like body having a low coefficient of thermal expansion in solder is disclosed.
このように、シリコン単結晶のウェハを機械加工の容易
な一般的な金属（鉄鋼系材料、銅合金、アルミニウム
等）と接合させる好適な方法が望まれているが、次のよ
うな項目を満足させる接合方法が存在しなかった。As described above, a suitable method for bonding a silicon single crystal wafer to a general metal (steel-based material, copper alloy, aluminum, etc.) that is easy to machine is desired, but the following items are satisfied. There was no joining method that allowed it.
・高い接合強度（シリコンの機械的な強度と同等の強
度） ・耐熱性（500℃程度までの耐熱性と300℃〜室温の温度
サイクルに対する耐久性） ・良好な電気伝導性と熱伝導性 ・高い接合信頼性 ・低コスト また、シリコン単結晶は従来より半導体材料として多用
されており、特に大きな電力を消費するもの（パワート
ランジスタ、サイリスタ等）では発熱が大きく、その冷
却が重要となる。・ High bonding strength (strength equivalent to mechanical strength of silicon) ・ Heat resistance (heat resistance up to about 500 ℃ and durability against temperature cycle from 300 ℃ to room temperature) ・ Good electrical and thermal conductivity ・High junction reliability and low cost In addition, silicon single crystals have been widely used as semiconductor materials from the past, and especially those that consume large amounts of power (power transistors, thyristors, etc.) generate a large amount of heat, and their cooling is important.
〈発明が解決しようとする問題点〉 このような従来技術の問題点に鑑み本発明の主な目的
は、上記したような項目を満足するようなシリコン単結
晶と金属材料とを接合するための方法を提供することに
ある。<Problems to be Solved by the Invention> In view of the above-mentioned problems of the prior art, a main object of the present invention is to bond a silicon single crystal and a metal material satisfying the above-mentioned items. To provide a method.
〈問題点を解決するための手段〉 このような目的は、本発明によれば、シリコン単結晶と
金属材料とをろう付けにより接合するための方法であっ
て、 シリコン単結晶と、アルミニウムまたはアルミニウム合
金からなる第１の接合用インサート材と、タングステ
ン、モリブデンまたはこれらの少なくともいずれか一方
を含む合金からなる第１の低熱膨脹率金属と、第２の接
合用インサート材と、前記第１の低熱膨脹率金属よりは
大きな熱膨脹率を有する第２の低熱膨脹率金属とをこの
順に積層加熱して全体を同時に接合して接合アセンブリ
を形成し、該接合アセンブリの第２の低熱膨脹率金属を
相手方の金属材にろう付けすることを特徴とする接合方
法を提供することにより達成される。<Means for Solving the Problems> According to the present invention, such an object is a method for joining a silicon single crystal and a metal material by brazing, which comprises: a silicon single crystal; and aluminum or aluminum. A first joining insert material made of an alloy; a first low coefficient of thermal expansion metal made of an alloy containing tungsten, molybdenum, or at least one of these; a second joining insert material; and the first joining material. A second low coefficient of thermal expansion metal having a coefficient of thermal expansion larger than that of the coefficient of thermal expansion is laminated and heated in this order to bond the whole simultaneously to form a joint assembly, and the second low coefficient of thermal expansion metal of the joint assembly is used as a counterpart. It is achieved by providing a joining method characterized by brazing to a metal material.
〈作用〉 このようにして、金属材料の熱膨脹が第１及び第２の低
熱膨脹率金属により緩和されるため、また、第１の低熱
膨脹率金属によりシリコン単結晶基板が補強されるた
め、シリコン単結晶に多大な応力が加わることがない。
また、上記各部分が、金属の溶着により結合されるた
め、高い接合強度、耐熱性、良好な電気伝導性、熱伝導
性及び高い接合信頼性を得ることができる。<Operation> In this way, the thermal expansion of the metal material is relaxed by the first and second low thermal expansion coefficient metals, and the silicon single crystal substrate is reinforced by the first low thermal expansion coefficient metal. No great stress is applied to the single crystal.
Moreover, since the above-mentioned respective parts are bonded by welding of the metal, it is possible to obtain high bonding strength, heat resistance, good electrical conductivity, thermal conductivity and high bonding reliability.
〈実施例〉 第１図は本発明の第１の実施例を示し、シリコン単結晶
からなるウェハ１と第１の接合用インサート材としての
アルミ箔２と第１の低熱膨脹率金属としてのタングステ
ン板３と第２の接合用インサート材としてのAl−Siろう
材４と、第２の低熱膨脹率金属としてのインバー合金５
とを積層してなるアセンブリを、インサート材２、４が
溶融する温度まで加熱保持し、全体を同時に接合させ
る。このとき、全体に適宜荷重を付加しておくと良い。
このとき、シリコン単結晶ウェハ１の厚さが0.1mm以
上、接合用インサート材としてのアルミ箔２及びAl−Si
ろう材４の厚さがいずれも５〜500μｍ、タングステン
板３の厚さが0.1〜5mm、インバー合金５の厚さが0.3mm
以上であると良い。<Embodiment> FIG. 1 shows a first embodiment of the present invention in which a wafer 1 made of a silicon single crystal, an aluminum foil 2 as a first bonding insert material, and a tungsten as a first low coefficient of thermal expansion metal are used. The plate 3, the Al-Si brazing material 4 as the second joining insert material, and the Invar alloy 5 as the second low thermal expansion coefficient metal
The assembly formed by stacking and is heated and held to a temperature at which the insert materials 2 and 4 are melted, and the entire assembly is simultaneously bonded. At this time, it is advisable to apply an appropriate load to the whole body.
At this time, the thickness of the silicon single crystal wafer 1 is 0.1 mm or more, and the aluminum foil 2 and Al-Si as the bonding insert material are used.
The brazing material 4 has a thickness of 5 to 500 μm, the tungsten plate 3 has a thickness of 0.1 to 5 mm, and the Invar alloy 5 has a thickness of 0.3 mm.
It is good that it is above.
ここで、上記インサート材の溶融温度、即ちろう付け温
度は、最低でも450℃、一般的には600℃程度となってい
る。そして、第１の低熱膨張率金属としてのタングステ
ンは室温から600℃程度までは略直線的に変化するが、
第２の低熱膨張率金属としてのインバー合金は約200℃
まではタングステンよりも、熱膨張率が小さいもののそ
れ以上の温度では、タングステンのそれを越えて急激に
大きくなる（第３図）。従って、室温から600℃程度の
間の熱膨張率は、ウェハ１＜タングステン板３（第１の
低熱膨脹率金属）＜インバー合金５（第２の低熱膨脹率
金属）となっている。Here, the melting temperature of the insert material, that is, the brazing temperature, is at least 450 ° C., generally about 600 ° C. And, the tungsten as the first low coefficient of thermal expansion changes substantially linearly from room temperature to about 600 ° C.,
Invar alloy as the second low coefficient of thermal expansion is about 200 ℃
Although the coefficient of thermal expansion is smaller than that of tungsten up to that of tungsten, at a temperature higher than that, it rapidly increases beyond that of tungsten (Fig. 3). Therefore, the coefficient of thermal expansion between room temperature and about 600 ° C. is wafer 1 <tungsten plate 3 (first low coefficient of thermal expansion metal) <invar alloy 5 (second low coefficient of thermal expansion metal).
尚、アルミ箔２は、アルミ合金箔、PVD、めっき等によ
り成膜したアルミ層であっても良い。Al−Siろう材４
も、650℃以下の温度にて溶融可能なろう材、パウダ
ー、箔、めっき或いはPVD層であっても良い。タングス
テン板３は、室温付近にあって６×10-6よりも小さな線
膨脹率を有する金属であれば良く、タングステンに代え
て、例えばモリブデン又はこれらの合金からなるもので
あっても良い。また、インバー合金５に代えて、コバー
ル、スーパーインバー等の低熱膨張率合金を用いること
もできる。The aluminum foil 2 may be an aluminum layer formed by aluminum alloy foil, PVD, plating or the like. Al-Si brazing material 4
Alternatively, it may be a brazing material, powder, foil, plating or PVD layer that can be melted at a temperature of 650 ° C. or lower. The tungsten plate 3 may be a metal having a linear expansion coefficient smaller than 6 × 10 −6 near room temperature, and may be made of molybdenum or an alloy thereof instead of tungsten. Further, instead of the Invar alloy 5, a low coefficient of thermal expansion alloy such as Kovar or Super Invar may be used.
第２図に示すように、第１図の積層アセンブリを、ろう
材６を介して銅、アルミニウム、ステンレス銅等の金属
材料７に積層し、前記と同様に適切な荷重を付加しつつ
接合用のインサート材２、４、６が溶融する温度まで加
熱保持して全体を同時に接合させる。ろう材６として
は、Al−Siろう材、Cu系またはAg系ろう材を用いると良
い。As shown in FIG. 2, the laminated assembly shown in FIG. 1 is laminated on the metallic material 7 such as copper, aluminum or stainless copper through the brazing filler metal 6 and is joined for applying an appropriate load as described above. The insert materials 2, 4, and 6 are heated and held to a temperature at which the insert materials 2, 4, and 6 are melted, and the whole is simultaneously joined. As the brazing material 6, Al-Si brazing material, Cu-based or Ag-based brazing material may be used.
本発明に基づく接合方法は、特に大型のシリコンウェハ
（直径２インチ以上）に於て効果的であって、直径５イ
ンチのシリコンウェハも何等問題なく接合することがで
きる。The bonding method according to the present invention is particularly effective for a large-sized silicon wafer (having a diameter of 2 inches or more), and a silicon wafer having a diameter of 5 inches can be bonded without any problem.
第１図に示された構造を有する接合材料を20℃／分の速
度にて加熱し、300℃の温度に達したなら10分間この温
度を保持した後、空冷により20℃／分の割合で冷却させ
るサイクルを200サイクル行ったが、シリコンウェハ或
いは接合界面にまったく異常を生じなかった。The bonding material having the structure shown in FIG. 1 is heated at a rate of 20 ° C./min, and when the temperature reaches 300 ° C., this temperature is maintained for 10 minutes, and then air cooling is performed at a rate of 20 ° C./min. After 200 cycles of cooling, no abnormality was found on the silicon wafer or the bonding interface.
次に、同じく20℃／分の割合で加熱し、300℃に達した
なら10分間この温度を保持した後、水冷により接合材料
を急冷する過程を50サイクル繰返したが、同じくシリコ
ンウェハと接合界面に何等異常を生じなかった。Next, the same heating process was performed at a rate of 20 ° C / min, and when the temperature reached 300 ° C, this temperature was held for 10 minutes, and then the process of rapidly cooling the bonding material by water cooling was repeated for 50 cycles. I didn't have any abnormalities.
第１表はシリコン単結晶及び各種材料の線膨脹率を比較
するもので、シリコン単結晶が極めて小さい線膨脹率を
有することがわかる。Table 1 compares the linear expansion coefficients of the silicon single crystal and various materials, and it can be seen that the silicon single crystal has a very small linear expansion coefficient.
第１表 各種材料の線膨脹率 （０〜100℃） シリコン単結晶 2.6×10-6 炭素鋼 11×10-6 ステンレス鋼 17×10-6 銅 17×10-6 アルミ 24×10-6 チタン ９×10-6 第３図は、シリコン単結晶ウェハ１、タングステン板
３、インバー合金５の室温よりの温度変化に対する寸法
変化量を示すもので、これらの寸法変化により発生する
応力が互いに相殺されることにより、インバー合金５或
いは金属材料７の熱変形が、ダンクステン板３或いはイ
ンバー合金５により緩和され、シリコンウェハ１に多大
な応力が加わるのが回避される。Table 1 Linear expansion coefficient of various materials (0 to 100 ° C) Silicon single crystal 2.6 × 10 -6 Carbon steel 11 × 10 -6 Stainless steel 17 × 10 -6 Copper 17 × 10 -6 Aluminum 24 × 10 -6 Titanium 9 × 10 -6 FIG. 3 shows the amount of dimensional change of the silicon single crystal wafer 1, the tungsten plate 3, and the Invar alloy 5 with respect to the temperature change from room temperature, and the stresses generated by these dimensional changes cancel each other out. As a result, the thermal deformation of the Invar alloy 5 or the metal material 7 is mitigated by the Dunxten plate 3 or the Invar alloy 5, and a large amount of stress is prevented from being applied to the silicon wafer 1.
〈発明の効果〉 本発明に基づく接合方法は、耐熱性が高く、熱伝導性が
良い接合界面を形成し得るため、シリコン単結晶を半導
体材料として用いた場合などに、シリコン単結晶を、冷
却機構を備えた金属加工部品と接合して組合わせること
により、冷却効率の改善を図ることが可能となる。また
シリコンはエッチングにより表面の精密加工が行いやす
く、熱膨脹率が小さいため温度による寸法変化も小さい
ことから、このような機械的な特性を生かした用途にも
好適に応用し得るようになり、その効果は極めて大であ
る。<Effects of the Invention> Since the bonding method according to the present invention can form a bonding interface having high heat resistance and good thermal conductivity, when a silicon single crystal is used as a semiconductor material, the silicon single crystal is cooled. It is possible to improve the cooling efficiency by joining and combining with a metal-working part having a mechanism. In addition, since it is easy to perform precision processing on the surface of silicon by etching, and since the coefficient of thermal expansion is small, the dimensional change due to temperature is small, so that it can be suitably applied to applications that make use of such mechanical characteristics. The effect is extremely large.
第１図は本発明の第１の実施例を示す模式的断面図であ
る。 第２図は本発明の第２の実施例を示す第１図と同様の図
である。 第３図はシリコン単結晶とタングステンとインバー合金
の温度変化に伴う寸法変化量を示すグラフである。 １……シリコン単結晶ウェハ ２……アルミ箔、３……タングステン板 ４……ろう材、５……インバー合金 ６……ろう材、７……金属材料FIG. 1 is a schematic sectional view showing a first embodiment of the present invention. FIG. 2 is a view similar to FIG. 1 showing a second embodiment of the present invention. FIG. 3 is a graph showing the amount of dimensional change of silicon single crystal, tungsten and Invar alloy with temperature change. 1 ... Silicon single crystal wafer 2 ... Aluminum foil, 3 ... Tungsten plate 4 ... Brazing material, 5 ... Invar alloy 6 ... Brazing material, 7 ... Metal material
Claims (3)
より接合するための方法であって、 シリコン単結晶と、アルミニウムまたはアルミニウム合
金からなる第１の接合用インサート材と、タングステ
ン、モリブデンまたはこれらの少なくともいずれか一方
を含む合金からなる第１の低熱膨脹率金属と、第２の接
合用インサート材と、前記第１の低熱膨脹率金属よりは
大きな熱膨脹率を有する第２の低熱膨脹率金属とをこの
順に積層加熱して全体を同時に接合して接合アセンブリ
を形成し、該接合アセンブリの第２の低熱膨脹率金属を
相手方の金属材にろう付けすることを特徴とする接合方
法。1. A method for joining a silicon single crystal and a metallic material by brazing, comprising: a silicon single crystal; a first joining insert material made of aluminum or an aluminum alloy; and tungsten, molybdenum, or these. A first low thermal expansion coefficient metal made of an alloy containing at least one of the above, a second bonding insert material, and a second low thermal expansion coefficient metal having a thermal expansion coefficient higher than that of the first low thermal expansion coefficient metal. And (2) are laminated and heated in this order to bond the entire body at the same time to form a bonded assembly, and the second low coefficient of thermal expansion metal of the bonded assembly is brazed to the counterpart metal material.
ン、モリブデンまたは室温付近で６×10-6よりも小さな
線膨脹率を有する金属の少なくともいずれか一種を含む
合金からなり、前記第２の接合用インサート材がろう材
からなり、前記第２の低熱膨脹率金属が低熱膨脹率合金
からなることを特徴とする特許請求の範囲第１項記載の
接合方法。2. The first low coefficient of thermal expansion metal is made of tungsten, molybdenum, or an alloy containing at least one of metals having a coefficient of linear expansion smaller than 6 × 10 −6 at room temperature, The joining method according to claim 1, wherein the joining insert material is made of a brazing filler metal, and the second metal having a low coefficient of thermal expansion is made of an alloy having a low coefficient of thermal expansion.
有し、前記両接合用インサート材がいずれも５〜500μ
ｍの厚さを有し、前記第１の低熱膨脹率金属が0.1〜5mm
の厚さを有し、前記第２の低熱膨脹率金属が0.3mm以上
の厚さを有することを特徴とする特許請求の範囲第１項
若しくは第２項に記載の接合方法。3. The silicon single crystal has a thickness of 0.1 mm or more, and both of the joining insert materials have a thickness of 5 to 500 μm.
The first low thermal expansion coefficient metal has a thickness of 0.1 to 5 mm.
The bonding method according to claim 1 or 2, wherein the second low thermal expansion coefficient metal has a thickness of 0.3 mm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61250017A JPH07115161B2 (en) | 1986-10-21 | 1986-10-21 | Method for joining silicon single crystal and metallic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61250017A JPH07115161B2 (en) | 1986-10-21 | 1986-10-21 | Method for joining silicon single crystal and metallic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63104778A JPS63104778A (en) | 1988-05-10 |
| JPH07115161B2 true JPH07115161B2 (en) | 1995-12-13 |
Family
ID=17201606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61250017A Expired - Lifetime JPH07115161B2 (en) | 1986-10-21 | 1986-10-21 | Method for joining silicon single crystal and metallic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07115161B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5593230A (en) * | 1979-01-10 | 1980-07-15 | Toshiba Corp | Soldering method for semiconductor device |
-
1986
- 1986-10-21 JP JP61250017A patent/JPH07115161B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63104778A (en) | 1988-05-10 |
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