JPH0711555B2 - Method for measuring optical characteristics of semiconductor laser - Google Patents
Method for measuring optical characteristics of semiconductor laserInfo
- Publication number
- JPH0711555B2 JPH0711555B2 JP61216548A JP21654886A JPH0711555B2 JP H0711555 B2 JPH0711555 B2 JP H0711555B2 JP 61216548 A JP61216548 A JP 61216548A JP 21654886 A JP21654886 A JP 21654886A JP H0711555 B2 JPH0711555 B2 JP H0711555B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- current
- optical
- pulse
- optical characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 24
- 230000003287 optical effect Effects 0.000 title claims description 22
- 230000002950 deficient Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はパルス電流を印加して半導体レーザの電流−光
出力特性を測定する方法に関する。The present invention relates to a method for measuring a current-light output characteristic of a semiconductor laser by applying a pulse current.
半導体レーザの品質管理項目として、閾値電流、外部微
分量子効率などの電流−光出力特性が挙げられる。そし
て例えば高速APC回路を使用して、半導体レーザに閾値
以上の種々の大きさのパルス電流を印加し、その光出力
を計測して電流−光出力特性を測定することにより、半
導体レーザの品質を検査することは公知である。Examples of quality control items for semiconductor lasers include current-light output characteristics such as threshold current and external differential quantum efficiency. Then, for example, by using a high-speed APC circuit, by applying a pulse current of various magnitudes above the threshold to the semiconductor laser and measuring the optical output to measure the current-optical output characteristics, the quality of the semiconductor laser is improved. Testing is known.
第５図は半導体レーザに対する従来のパルス電流に印加
方法を示すグラフであって、縦軸が電流，横軸が時間を
示し、また縦軸のImは半導体レーザの最大電流（検査対
象の半導体レーザにおける検査範囲内の最大の光出力に
相当する電流）,Ithは半導体レーザの閾値電流を表す。
従来の印加方法は第５図に示す如く、閾値電流Ithから
電流を徐々に増加させていく。FIG. 5 is a graph showing a conventional pulse current application method for a semiconductor laser, in which the vertical axis represents current and the horizontal axis represents time, and the vertical axis Im represents the maximum current of the semiconductor laser (the semiconductor laser to be inspected). , Ith represents the threshold current of the semiconductor laser.
In the conventional application method, as shown in FIG. 5, the current is gradually increased from the threshold current Ith.
また第６図は上述したように、半導体レーザにパルス電
流を印加した場合の電流−光出力の特性を表したもので
あり、印加する電流が閾値電流を超えると光出力は急激
に増加する。そして第６図Ａに示す如く直線状の特性を
有する半導体レーザを良品、第６図Ｂに示す如き非直線
状の特性を有する半導体レーザを不良品としている。Further, FIG. 6 shows the current-optical output characteristics when a pulse current is applied to the semiconductor laser as described above, and the optical output rapidly increases when the applied current exceeds the threshold current. A semiconductor laser having a linear characteristic as shown in FIG. 6A is a good product, and a semiconductor laser having a nonlinear characteristic as shown in FIG. 6B is a defective product.
ところで、第６図Ｂに示す如き不良品の特性を示す半導
体レーザの特性を何度か測定すると、第６図Ａに示す如
き良品の特性を示すものに変化することがある。また良
品の特性に変化した後は安定状態となり、以後不良品の
特性に変化することはない。By the way, if the characteristics of a semiconductor laser showing the characteristics of a defective product as shown in FIG. 6B are measured several times, the characteristics may change to those of a good product as shown in FIG. 6A. Further, after the characteristics of the non-defective product are changed to a stable state, the characteristics of the defective product are not changed thereafter.
以上のような特性変化を示すのは通電による初期特性の
変化に基づくものと考えられる。It is considered that the above-mentioned characteristic changes are based on the change in initial characteristics due to energization.
従って半導体レーザの電流−光出力特性を測定して、良
品か不良品かを判断する場合、良品の特性を有する半導
体レーザに変化する可能性のある半導体レーザを、特性
測定の結果、不良品の半導体レーザと誤判断してしまう
ことがあるという問題点があった。Therefore, when measuring the current-light output characteristics of the semiconductor laser to determine whether it is a good product or a defective product, a semiconductor laser that may change to a semiconductor laser having the characteristics of a good product is determined as a defective product as a result of the characteristic measurement. There is a problem that it may be erroneously determined to be a semiconductor laser.
本発明はかかる事情に鑑みてなされたものであり、最初
に閾値以上のパルス電流を半導体レーザに印加すること
により、通電中の初期特性変化の影響を受けずに半導体
レーザの光学特性を厳密に測定でき、この結果、上述の
如き半導体レーザの品質における誤判断を帽子できる半
導体レーザの光学特性測定方法を提供することを目的と
する。The present invention has been made in view of such circumstances, and by first applying a pulse current of a threshold value or more to the semiconductor laser, the optical characteristics of the semiconductor laser are strictly controlled without being affected by the change in initial characteristics during energization. It is an object of the present invention to provide a method for measuring the optical characteristics of a semiconductor laser that can perform measurement and as a result can prevent misjudgment in the quality of the semiconductor laser as described above.
本発明の半導体レーザの光学特性測定方法は、パルス電
流の半導体レーザに印加して該半導体レーザの電流−光
出力特性を測定する半導体レーザの光学特性測定方法に
おいて、非通電の半導体レーザにこの半導体レーザの閾
値電流以上の大きさのパルス電流を予め印加した後、該
半導体レーザに上記閾値電流以上の種々の大きさのパル
ス電流を印加して光出力を測定することを特徴とする。The semiconductor laser optical characteristic measuring method of the present invention is a semiconductor laser optical characteristic measuring method of applying a pulse current to a semiconductor laser to measure a current-optical output characteristic of the semiconductor laser. The optical output is measured by applying a pulse current having a magnitude equal to or larger than the threshold current of the laser in advance and then applying a pulse current having various magnitudes equal to or larger than the threshold current to the semiconductor laser.
本発明の半導体レーザの光学特性測定方法は、一度も通
電していない、即ち非通電の半導体レーザにこの半導体
レーザの閾値電流以上の大きさのパルス電流を予め印加
するので、半導体レーザの温度上昇を抑制しつつ非通電
の半導体レーザに起こり得る初期特性の変化をこの通電
時に起こすことができる。従って、半導体レーザに閾値
電流以上の種々の大きさのパルス電流を印加して光出力
を測定する際には、半導体レーザの初期特性の変化が起
きないようにできる。In the method for measuring optical characteristics of a semiconductor laser according to the present invention, a pulse current having a magnitude greater than or equal to a threshold current of the semiconductor laser is applied to a semiconductor laser which has never been energized, that is, a non-energized semiconductor laser. It is possible to suppress a change in initial characteristics that may occur in a non-energized semiconductor laser while suppressing this. Therefore, when the optical output is measured by applying a pulse current of various magnitudes higher than the threshold current to the semiconductor laser, it is possible to prevent the change of the initial characteristics of the semiconductor laser.
よって、本発明方法では半導体レーザの光学特性を厳密
に測定できるので、従来あった半導体レーザの品質にお
ける誤判断を防止できる。Therefore, since the optical characteristics of the semiconductor laser can be strictly measured by the method of the present invention, it is possible to prevent the erroneous determination in the quality of the semiconductor laser which has been present conventionally.
以下本発明をその実施例を示す図面に基づき説明する。
第１図は本発明に係る半導体レーザの光学特性測定方法
を実施するための装置の模式図であり、図中１は光学特
性を測定すべき半導体レーザを表す。半導体レーザ１に
種々の電流を通電するパルス電源２が、半導体レーザ１
の＋電極1a,−電極1bに接続してある。半導体レーザ１
の一方向への出力光の全体を受光できるように大きな面
積を有するフォトダイオード３が、半導体レーザ１に対
設されており、またフォトダイオード３には、フォトダ
イオード３の出力電気信号を記録する記録器４が接続さ
れている。The present invention will be described below with reference to the drawings showing an embodiment thereof.
FIG. 1 is a schematic view of an apparatus for carrying out a method for measuring optical characteristics of a semiconductor laser according to the present invention, in which 1 denotes a semiconductor laser whose optical characteristics are to be measured. The pulse power supply 2 for supplying various currents to the semiconductor laser 1 is the semiconductor laser 1
Are connected to the positive electrode 1a and negative electrode 1b. Semiconductor laser 1
A photodiode 3 having a large area so as to be able to receive the entire output light in one direction is provided opposite to the semiconductor laser 1, and the photodiode 3 records the output electric signal of the photodiode 3. The recorder 4 is connected.
次に、本発明の光学特性測定方法について説明する。第
２図に示すように、パルス電源２から電極1a,1bを介し
て半導体レーザ１に最大電流を３回印加する。但しこの
場合は光出力は測定しない。次に同じくパルス電源２か
ら電極1a,1bを介して半導体レーザ１にパルス電流を印
加し、半導体レーザ１からレーザ光をフォトダイオード
３で受光し、その出力電気信号を記録器４にて記録し、
半導体レーザ１の駆動電流と光出力、つまりフォトダイ
オード３の出力電気信号値とから光学特性を得る。印加
電流は閾値電流から徐々に大きくしていき最後は最大電
流を印加する。本発明では、最初に閾値電流以上の大き
さのパルス電流を印加するので、初期特性の影響を除去
でき、従来方法では第６図Ｂに示す如き不良品特性を示
す半導体レーザであっても、その一部は第６図Ａに示す
如き良品特性を示すことになり、従来より厳密に半導体
レーザの光学特性を測定できる。Next, the optical property measuring method of the present invention will be described. As shown in FIG. 2, the maximum current is applied three times from the pulse power source 2 to the semiconductor laser 1 via the electrodes 1a and 1b. However, in this case, the light output is not measured. Similarly, a pulse current is applied to the semiconductor laser 1 from the pulse power source 2 via the electrodes 1a and 1b, the laser light is received by the photodiode 3 from the semiconductor laser 1, and the output electric signal is recorded by the recorder 4. ,
Optical characteristics are obtained from the drive current of the semiconductor laser 1 and the optical output, that is, the output electric signal value of the photodiode 3. The applied current is gradually increased from the threshold current, and finally the maximum current is applied. In the present invention, since a pulse current having a magnitude greater than or equal to the threshold current is first applied, the influence of the initial characteristics can be eliminated, and even in the conventional method, even a semiconductor laser showing defective characteristics as shown in FIG. 6B, A part of them shows good product characteristics as shown in FIG. 6A, and the optical characteristics of the semiconductor laser can be measured more strictly than before.
第３図，第４図は本発明の他の実施例による電流印加方
法を示したグラフであり、第３図では、まず最大電流と
閾値電流との中間の大きさのパルス電流を印加し、実際
の測定における印加方法は第２図の場合と同様である。
一方、第４図では、まず最大電流よりも大きいパルス電
流を印加する。実際の測定における印加方法は最大電流
から徐々に低下させていき最後は閾値電流を印加する。3 and 4 are graphs showing a method of applying a current according to another embodiment of the present invention. In FIG. 3, first, a pulse current having an intermediate magnitude between the maximum current and the threshold current is applied, The application method in the actual measurement is the same as in the case of FIG.
On the other hand, in FIG. 4, first, a pulse current larger than the maximum current is applied. The application method in actual measurement is to gradually decrease from the maximum current, and finally apply the threshold current.
ここで最初に印加するパルス電流は閾値電流以上の大き
さであればよいので、初期特性の影響を除去するために
は第２〜４図のどの方法でもよいが、より安定な特性を
得るためには第４図に示す如く、最大電流より大きいパ
ルス電流を印加する方法が最も良い。Here, the pulse current applied first has only to be greater than or equal to the threshold current, so any of the methods shown in FIGS. 2 to 4 may be used to eliminate the influence of the initial characteristics, but in order to obtain more stable characteristics. The best method is to apply a pulse current larger than the maximum current as shown in FIG.
なお、本発明方法の要旨をなす最初のパルス電流の印加
回数について、本実施例では３回としたが、これに限ら
ず半導体レーザの種別によりその印加回数は異なり、半
導体レーザの種別により１〜20回で十分な効果が得られ
る。The number of times of application of the first pulse current, which is the gist of the method of the present invention, is set to 3 in this embodiment, but the number of times of application is not limited to this, and the number of times of application varies depending on the type of semiconductor laser. 20 times gives a sufficient effect.
本発明の半導体レーザの光学特性測定方法は、一度も通
電していない、即ち非通電の半導体レーザにこの半導体
レーザの閾値電流以上の大きさのパルス電流を予め印加
するので、半導体レーザの温度上昇を抑制しつつ非通電
の半導体レーザに起こり得る初期特性の変化をこの通電
時に起こすことができる。従って、半導体レーザに閾値
電流以上の種々の大きさのパルス電流を印加して光出力
を測定する際には、半導体レーザの初期特性の変化が起
きないようにできる。In the method for measuring optical characteristics of a semiconductor laser according to the present invention, a pulse current having a magnitude greater than or equal to a threshold current of the semiconductor laser is applied to a semiconductor laser which has never been energized, that is, a non-energized semiconductor laser. It is possible to suppress a change in initial characteristics that may occur in a non-energized semiconductor laser while suppressing this. Therefore, when the optical output is measured by applying a pulse current of various magnitudes higher than the threshold current to the semiconductor laser, it is possible to prevent the change of the initial characteristics of the semiconductor laser.
よって、本発明方法では半導体レーザの光学特性を厳密
に測定できるので、従来あった半導体レーザの品質にお
ける誤判断を防止できる。Therefore, since the optical characteristics of the semiconductor laser can be strictly measured by the method of the present invention, it is possible to prevent the erroneous determination in the quality of the semiconductor laser which has been present conventionally.
第１図は本発明方法を実施するための装置の模式図、第
２図は電流印加方法を示すグラフ、第3,4図は電流印加
方法を示すグラフ、第５図は従来の電流印加方法を示す
グラフ、第６図は電流−光出力特性を示すグラフであ
る。 １……半導体レーザ、1a……＋電極、1b……−電極、２
……パルス電源、３……フォトダイオード、４……記録
器FIG. 1 is a schematic diagram of an apparatus for carrying out the method of the present invention, FIG. 2 is a graph showing a current applying method, FIGS. 3 and 4 are graphs showing a current applying method, and FIG. 5 is a conventional current applying method. FIG. 6 is a graph showing current-light output characteristics. 1 ... Semiconductor laser, 1a ... + electrode, 1b ...- electrode, 2
...... Pulse power supply, 3 ... Photodiode, 4 ... Recorder
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森 和思 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (56)参考文献 特開 昭54−160247（ＪＰ，Ａ) 実開 昭59−90871（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazushi Mori 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-54-160247 (JP, A) 59-90871 (JP, U)
Claims (1)
導体レーザの電流−光出力特性を測定する半導体レーザ
の光学特性測定方法において、 非通電の半導体レーザにこの半導体レーザの閾値電流以
上の大きさのパルス電流を予め印加した後、該半導体レ
ーザに上記閾値電流以上の種々の大きさのパルス電流を
印加して光出力を測定することを特徴とする半導体レー
ザの光学特性測定方法。1. A method for measuring an optical characteristic of a semiconductor laser, in which a pulse current is applied to the semiconductor laser to measure a current-optical output characteristic of the semiconductor laser, wherein a non-energized semiconductor laser has a magnitude larger than a threshold current of the semiconductor laser. Is applied in advance, and then a pulse current of various magnitudes equal to or higher than the threshold current is applied to the semiconductor laser to measure the optical output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61216548A JPH0711555B2 (en) | 1986-09-12 | 1986-09-12 | Method for measuring optical characteristics of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61216548A JPH0711555B2 (en) | 1986-09-12 | 1986-09-12 | Method for measuring optical characteristics of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6371668A JPS6371668A (en) | 1988-04-01 |
| JPH0711555B2 true JPH0711555B2 (en) | 1995-02-08 |
Family
ID=16690162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61216548A Expired - Lifetime JPH0711555B2 (en) | 1986-09-12 | 1986-09-12 | Method for measuring optical characteristics of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711555B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009004422A (en) * | 2007-06-19 | 2009-01-08 | Anritsu Corp | Method of screening quality of semiconductor laser and its quality screening device |
| CN108983064B (en) * | 2018-08-10 | 2024-05-31 | 武汉盛为芯科技有限公司 | Method and device for testing high-speed direct-tuning dynamic spectrum of semiconductor laser diode chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54160247A (en) * | 1978-06-08 | 1979-12-18 | Canon Inc | Information output device |
| JPS5990871U (en) * | 1982-12-13 | 1984-06-20 | 日本電気株式会社 | Semiconductor device characteristic measurement equipment |
-
1986
- 1986-09-12 JP JP61216548A patent/JPH0711555B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6371668A (en) | 1988-04-01 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |