JPH07116594B2 - Electron gun type film forming equipment - Google Patents
Electron gun type film forming equipmentInfo
- Publication number
- JPH07116594B2 JPH07116594B2 JP1199613A JP19961389A JPH07116594B2 JP H07116594 B2 JPH07116594 B2 JP H07116594B2 JP 1199613 A JP1199613 A JP 1199613A JP 19961389 A JP19961389 A JP 19961389A JP H07116594 B2 JPH07116594 B2 JP H07116594B2
- Authority
- JP
- Japan
- Prior art keywords
- electron gun
- film forming
- power supply
- supply line
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007740 vapor deposition Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、電子銃を用いた成膜装置に関する。TECHNICAL FIELD The present invention relates to a film forming apparatus using an electron gun.
（従来の技術） 近年素子の高密度化にともない、高融点で低抵抗を必要
とされるゲート電極として、多結晶シリコンに変わり高
融点金属や各種シリサイドが注目されている。また、マ
イクロ波デバイスなどへの応用を目的として、シリコン
分子線エピタキシー（MBE）法が研究されている。(Prior Art) In recent years, as the density of devices has increased, high melting point metals and various silicides have been attracting attention as gate electrodes which are required to have high melting points and low resistances instead of polycrystalline silicon. In addition, silicon molecular beam epitaxy (MBE) has been studied for the purpose of application to microwave devices.
これらの材料を形成する方法として、蒸着試料に電子線
を照射し加熱蒸着させる、電子ビーム蒸着法が用いられ
ている。従来用いられている電子銃回りの構造例を第２
図に示す。電子はフィラメント１から放出され、給電線
６から供給される６〜10kVの高電圧により加速される。
ポールピース３にある永久磁石により軌道を曲げられハ
ース４にある蒸着試料２に照射される。As a method of forming these materials, an electron beam vapor deposition method in which a vapor deposition sample is irradiated with an electron beam and heated and vapor deposited is used. Second example of the structure around an electron gun that has been used conventionally
Shown in the figure. The electrons are emitted from the filament 1 and accelerated by the high voltage of 6 to 10 kV supplied from the power supply line 6.
The track is bent by a permanent magnet on the pole piece 3, and the vapor deposition sample 2 on the hearth 4 is irradiated.
（発明が解決しようとする課題） 電子ビーム蒸着法では、ハース４内の蒸着試料のみを電
子ビーム加熱蒸着している。しかし、この蒸着粒子は電
子ビームの影響を受けて帯電する。SiMBE等で正と負に
帯電した蒸着粒子が存在することが、アプライドフィジ
ックスレターズ54巻629ページ（Appl.Phys.Lett.54,629
（1989））に実験的に示されている。帯電した蒸着粒子
はフィラメントへの給電線６など高電圧の印加された部
分に、静電的に引き寄せられてスパッタする。これは蒸
着を行なった後給電線などに蒸着源が付着していること
から裏付けられる。給電線の材料としては銅を使うこと
が多いが、銅がスパッタされて不純物金属として蒸着膜
中に混入する。この汚染は、例えばSiMBEではキャリア
の寿命に影響し、また金属薄膜を半導体上に形成するよ
うな場合にはショットキーバリアハイトに影響を及ぼ
す。(Problems to be Solved by the Invention) In the electron beam evaporation method, only the evaporation sample in the hearth 4 is subjected to electron beam heating evaporation. However, the vapor deposition particles are charged by being affected by the electron beam. The existence of positively and negatively charged vapor-deposited particles in SiMBE, etc. is reported in Applied Physics Letters Vol. 54, p. 629 (Appl.Phys.Lett.54,629).
(1989)). The charged vapor deposition particles are electrostatically attracted to the portion to which a high voltage is applied, such as the power supply line 6 to the filament, and sputter. This is supported by the fact that the vapor deposition source is attached to the power supply line after vapor deposition. Copper is often used as the material of the power supply line, but copper is sputtered and mixed in the deposited film as an impurity metal. This contamination affects the carrier lifetime in SiMBE, for example, and also affects the Schottky barrier height when a metal thin film is formed on a semiconductor.
本発明の目的は、このような従来の欠点を除去して、電
子ビーム蒸着法による成膜において、不純物の混入のな
い膜の形成装置を提供することにある。An object of the present invention is to eliminate such a conventional defect and provide a film forming apparatus in which impurities are not mixed in the film formation by the electron beam evaporation method.
（課題を解決するための手段） 本発明は、電子銃を用いた成膜装置において、フィラメ
ントへの給電線のように高電圧の印加された部分を、蒸
着試験からの蒸着粒子が被蒸着物へ飛ぶのを妨げないよ
うに、蒸着試料と前記給電線との間に、接地した金属あ
るいは金属網で覆ったことを特徴とする成膜装置であ
る。(Means for Solving the Problems) In the present invention, in a film forming apparatus using an electron gun, a portion to which a high voltage is applied, such as a power supply line to a filament, has vapor-deposited particles from a vapor-deposition test as an object to be deposited. The film forming apparatus is characterized in that it is covered with a grounded metal or a metal net between the vapor deposition sample and the power supply line so as not to prevent jumping to the bottom.
（実施例） 次に発明の実施例について具体的に説明する。(Example) Next, the Example of this invention is described concretely.
電子銃はフランジに接続されてチャンバー内に導入され
ており、フィラメントへの給電線が露出している。本実
施例では、これを第１図に示すように給電線の上方（蒸
着対象のある側）と側方を金属板７で覆い、フランジ８
などと接続してアースに落としている。こうすることに
より、給電線６は電気的に遮蔽されるので、荷電蒸着粒
子によるスパッタを除去できる。この場合、給電線６の
上方のみに金属板を設置することでも、荷電蒸着粒子の
回り込みを制御できる。また金属板の代わりに金属網を
用いても、静電遮蔽の効果は同様であるので有効であ
る。第３図に、白金をシリコン基板上に、給電線が露出
した従来型の装置で蒸着した膜と本実施例の装置で蒸着
した膜の、オージェ電子分光法による元素分析の結果を
示す。上側に従来型による結果を、下側に本実施例によ
る結果を示すが、前者は給電線の材料である銅が検出さ
れているのに対し、後者では検出されない。このこと
は、蒸着粒子による給電線のスパッタが抑制されたこと
を示している。図中炭素や酵素が検出されているが、こ
れは膜形成後の表面の吸着であり本発明とはなんら関係
ない。The electron gun is connected to the flange and introduced into the chamber, and the power supply line to the filament is exposed. In the present embodiment, as shown in FIG. 1, this is covered with a metal plate 7 on the upper side (the side on which vapor deposition is to be performed) and the side of the power supply line, and the flange 8 is formed.
It is connected to such as and is grounded. By doing so, the power supply line 6 is electrically shielded, so that the spatter caused by the charged vapor deposition particles can be removed. In this case, the wraparound of the charged vapor deposition particles can be controlled by installing a metal plate only above the power supply line 6. Further, even if a metal net is used instead of the metal plate, the effect of electrostatic shielding is the same, which is effective. FIG. 3 shows the results of elemental analysis by Auger electron spectroscopy of a film formed by depositing platinum on a silicon substrate by a conventional device having an exposed power supply line and a film deposited by the device of this embodiment. The result of the conventional type is shown on the upper side, and the result of the present example is shown on the lower side. While copper in the former is detected as the material of the power supply line, it is not detected in the latter. This indicates that the sputtering of the feeder line due to the vapor deposition particles was suppressed. Although carbon and enzyme are detected in the figure, this is adsorption on the surface after film formation and has nothing to do with the present invention.
なお本実施例では電極９は遮蔽していないが、この部分
も遮蔽すれば不純物混入を抑制できる。In this embodiment, the electrode 9 is not shielded, but if this portion is shielded as well, the mixing of impurities can be suppressed.
（発明の効果） 以上詳述したように、本発明によれば電子銃を用いた成
膜において、高電圧の印加された部分を電気的に遮蔽す
ることにより、蒸着源より飛出した荷電粒子が、これら
の部分をスパッタすることを抑制できるので、不純物金
属の混入を抑えることができ、Siなどの電気特性の向上
及びシリサイド形成過程への影響やショットキバリアの
バリアハイトの変調等を除去できる。(Effects of the Invention) As described in detail above, according to the present invention, in the film formation using the electron gun, the charged particles that are ejected from the evaporation source are electrically shielded by electrically shielding the portion to which a high voltage is applied. However, since it is possible to suppress the sputtering of these portions, it is possible to suppress the mixing of the impurity metal, and it is possible to improve the electrical characteristics of Si and the like, influence on the silicide formation process, the modulation of the barrier height of the Schottky barrier, and the like.
第１図は、本発明の装置の実施例を示す図で（ａ）は側
面図、（ｂ）はＡ−Ａ′断面図、第２図は、従来例を示
す図、第３図は、従来例と本発明の実施例の装置によ
る、蒸着膜のオージェ電子分光法による元素分析の結果
を示す図である。 １……フィラメント、２……蒸着試料、３……ポールピ
ース、４……ハース、５……水冷管、６……給電線、７
……金属板、８……フランジFIG. 1 is a view showing an embodiment of the apparatus of the present invention, (a) is a side view, (b) is a sectional view taken along line AA ′, FIG. 2 is a view showing a conventional example, and FIG. 3 is It is a figure which shows the result of the elemental analysis by Auger electron spectroscopy of a vapor deposition film by the apparatus of the prior art example and the Example of this invention. 1 ... Filament, 2 ... Evaporated sample, 3 ... Pole piece, 4 ... Hearth, 5 ... Water cooling tube, 6 ... Feed line, 7
…… Metal plate, 8 …… Flange
Claims (1)
属板または金属網を、蒸着試料と前記給電線との間に設
けることを特徴とする電子銃式成膜装置。1. An electron gun type film forming apparatus, wherein a grounded metal plate or metal net covering a power supply line to a filament is provided between a vapor deposition sample and the power supply line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199613A JPH07116594B2 (en) | 1989-07-31 | 1989-07-31 | Electron gun type film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199613A JPH07116594B2 (en) | 1989-07-31 | 1989-07-31 | Electron gun type film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0364455A JPH0364455A (en) | 1991-03-19 |
| JPH07116594B2 true JPH07116594B2 (en) | 1995-12-13 |
Family
ID=16410770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1199613A Expired - Lifetime JPH07116594B2 (en) | 1989-07-31 | 1989-07-31 | Electron gun type film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07116594B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4752139B2 (en) * | 2001-06-06 | 2011-08-17 | パナソニック株式会社 | Manufacturing method of thermal fuse |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5295170A (en) * | 1976-02-06 | 1977-08-10 | Hitachi Ltd | Evaporator by electron beam |
| JPS60165372A (en) * | 1984-02-09 | 1985-08-28 | Matsushita Electronics Corp | Electron beam vapor deposition apparatus |
-
1989
- 1989-07-31 JP JP1199613A patent/JPH07116594B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0364455A (en) | 1991-03-19 |
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