JPH07116597B2 - Sputtering equipment - Google Patents
Sputtering equipmentInfo
- Publication number
- JPH07116597B2 JPH07116597B2 JP1190213A JP19021389A JPH07116597B2 JP H07116597 B2 JPH07116597 B2 JP H07116597B2 JP 1190213 A JP1190213 A JP 1190213A JP 19021389 A JP19021389 A JP 19021389A JP H07116597 B2 JPH07116597 B2 JP H07116597B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- target
- substrate
- base body
- peripheral surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 51
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 24
- 239000012495 reaction gas Substances 0.000 claims description 21
- 239000011261 inert gas Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010408 film Substances 0.000 description 10
- 239000011295 pitch Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000004323 axial length Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、表面に薄膜をスパッタ蒸発手段により形成さ
せるスパッタリング装置に関する。Description: TECHNICAL FIELD The present invention relates to a sputtering apparatus for forming a thin film on a surface by a sputter evaporation means.
（従来の技術） 最近、金属材料の耐食性を向上させる手段の一つとし
て、物理的蒸着法の一つであるスパッタリング装置が採
用されている。(Prior Art) Recently, a sputtering apparatus, which is one of physical vapor deposition methods, has been adopted as one of means for improving the corrosion resistance of metal materials.
この種のスパッタリング装置には、第６図及び第７図に
例示するものがあり、容器20内に陰極21と陽極22とが対
向状に配設され、陰極21と陽極22上に、それぞれターゲ
ット23と基体24とが備えられると共に容器20には内部の
気体を排出させるための排気管25が接続されている。This type of sputtering device is exemplified in FIGS. 6 and 7, and a cathode 21 and an anode 22 are arranged in a container 20 so as to face each other, and a target is provided on each of the cathode 21 and the anode 22. 23 and a base 24 are provided, and an exhaust pipe 25 for discharging the gas inside is connected to the container 20.
なお、第６図に示す装置では、Ar等の不活性ガスまたは
N2等の反応ガスとの混合ガスが、混合ガス供給管26を介
して容器20の側壁から導入され、ターゲット23と基体24
との間にシャッター27が設けられている。In the apparatus shown in FIG. 6, an inert gas such as Ar or
A mixed gas with a reaction gas such as N 2 is introduced from the side wall of the container 20 through the mixed gas supply pipe 26, and the target 23 and the substrate 24
A shutter 27 is provided between and.
また、第７図に示す装置では、不活性ガスが供給管28に
よりターゲット23近傍に、また反応ガスが導入管29によ
り基体24近傍に、それぞれ供給されるようになってい
る。Further, in the apparatus shown in FIG. 7, the inert gas is supplied to the vicinity of the target 23 by the supply pipe 28, and the reaction gas is supplied to the vicinity of the substrate 24 by the introduction pipe 29.
そして、上記装置では、ターゲット23の材料、たとえ
ば、純TiをAr等の不活性ガスイオンでスパッタ蒸発さ
せ、反応ガスとして少量のN2ガスを導入することによ
り、TiとN2とが反応し、基体24上にTiNの薄膜が形成さ
れる。この装置において重要なことは、均一な組成の薄
膜を形成させるために、反応ガスを均一に分布させるこ
とである。In the above apparatus, the material of the target 23, for example, pure Ti is sputter-evaporated with an inert gas ion such as Ar, and a small amount of N 2 gas is introduced as a reaction gas, whereby Ti and N 2 react with each other. A thin film of TiN is formed on the substrate 24. What is important in this apparatus is to uniformly distribute the reaction gas in order to form a thin film having a uniform composition.
ところで、上記装置においては、基体24が平板状であれ
ば問題はないが、基体24が円筒状でその内面に薄膜を形
成させる場合には、基体内部に外部から反応ガスが供給
されるため、基体内部に反応ガスが軸心方向に均一に供
給されず、基体内部の両端部側が中央側よりも、反応ガ
スの濃度が高くなり、筒状基体内周面に均一な組成の薄
膜を形成できない。By the way, in the above apparatus, there is no problem if the substrate 24 is flat, but when the substrate 24 is cylindrical and a thin film is formed on its inner surface, the reaction gas is supplied from the outside into the substrate, The reaction gas is not uniformly supplied to the inside of the substrate in the axial direction, and the concentration of the reaction gas becomes higher on both end sides of the inside of the substrate than on the center side, and a thin film having a uniform composition cannot be formed on the inner peripheral surface of the cylindrical substrate. .
例えば、筒状基体内周面にTiNの薄膜を形成した場合、
筒状基体両端部の30〜50mmの範囲にはTiNの薄膜が形成
されるが、該基体の上記両端部を除く部分には殆どTiの
みから成る薄膜が形成される。For example, when a thin film of TiN is formed on the inner peripheral surface of the tubular substrate,
A thin film of TiN is formed in the range of 30 to 50 mm on both ends of the tubular substrate, but a thin film consisting of almost only Ti is formed on the portion of the substrate except the above-mentioned both ends.
この原因は、N2ガスが筒状基体内部の両端部領域で反応
して消費されてしまい、筒状基体内部の中央部までN2ガ
スが十分に行き届かないためである。This is because the N 2 gas reacts and is consumed in both end regions inside the tubular substrate, and the N 2 gas does not reach the central portion inside the tubular substrate sufficiently.
そこで、本願発明者等は、上記問題点を解決すべく、す
でに反応性スパッタリング装置を提案している（特願昭
63−11506号）。この先願に係る装置は、第８図に示す
ように、ターゲット30に筒状基体31が同心状に外嵌さ
れ、不活性ガス雰囲気中で、ターゲット30と基体31間で
グロー放電が生起されて、ターゲット30の材料がスパッ
タ蒸発せしめられ、この蒸発したターゲット30の材料と
基体31内部の反応ガスとの化合物が薄膜として基体31内
周面に形成されるようにしたものであり、特に、基体31
内部にその軸心方向全長にわたる反応ガス導入管32が基
体31の軸心と平行に配設され、該導入管32の基体31内部
にある部分に、該部分の軸心方向全長にわたる部分から
略均一に反応ガスを流出させるガス流出孔33が設けられ
ている。34は真空容器、35はターンテーブル、36はモー
タ、37は電源、38は不活性ガス供給管、39は排気管であ
る。Therefore, the inventors of the present application have already proposed a reactive sputtering apparatus to solve the above problems (Japanese Patent Application No.
63-11506). In the device according to this prior application, as shown in FIG. 8, a cylindrical base 31 is concentrically fitted over the target 30 and a glow discharge is generated between the target 30 and the base 31 in an inert gas atmosphere. The material of the target 30 is sputter-evaporated, and the compound of the evaporated material of the target 30 and the reaction gas inside the substrate 31 is formed on the inner peripheral surface of the substrate 31 as a thin film. 31
A reaction gas introduction pipe 32 is disposed inside the base 31 in parallel with the entire length in the axial direction of the base 31. A gas outflow hole 33 for uniformly outflowing the reaction gas is provided. 34 is a vacuum container, 35 is a turntable, 36 is a motor, 37 is a power supply, 38 is an inert gas supply pipe, and 39 is an exhaust pipe.
（発明が解決しようとする課題） ところで、先願に係る上記装置にあっては、基体31内部
に挿入されたガス導入管32から略均一に反応ガスが流出
せしめられるが、筒状基体31内周面に形成される薄膜の
軸方向膜厚分布は、第９図に例示するように、不均一で
あり、特に先端部付近の膜厚が薄くなるという問題があ
る。(Problems to be Solved by the Invention) In the above-mentioned device according to the prior application, the reaction gas is allowed to flow out substantially uniformly from the gas introduction pipe 32 inserted into the inside of the base 31. The axial film thickness distribution of the thin film formed on the peripheral surface is non-uniform as illustrated in FIG. 9, and there is a problem that the film thickness becomes thin particularly near the tip.
本発明は、上記のような実状に鑑みてなされたもので、
筒状基体の内周全面に略均一な膜厚の薄膜を形成するこ
とのできるスパッタリング装置を提供することを目的と
する。The present invention has been made in view of the above situation,
An object of the present invention is to provide a sputtering apparatus capable of forming a thin film having a substantially uniform film thickness on the entire inner circumference of a cylindrical substrate.
（発明を解決するための手段） 本発明では、上記目的を達成するために、次の技術的手
段を講じた。(Means for Solving the Invention) In the present invention, in order to achieve the above object, the following technical means are taken.
すなわち、本発明は、ターゲット２に筒状基体４が同心
状に外嵌され、不活性ガス雰囲気中で、前記ターゲット
２と基体４間でグロー放電が生起されて、前記ターゲッ
ト２の材料がスパッタ蒸発せしめられ、この蒸発したタ
ーゲット２の材料または、この材料と基体４内部の反応
ガスとの化合物が、薄膜として前記基体４内周面に形成
されるスパッタリング装置において、前記基体４内部に
ガス導入管11が配設され、該ガス導入管11の基体内部に
位置する部分の軸心方向中央部にのみ、不活性ガスまた
は、不活性ガスと反応ガスの混合ガスを流出させるガス
流出孔12が形成されていることを特徴とする。That is, according to the present invention, the cylindrical substrate 4 is concentrically fitted onto the target 2 and glow discharge is generated between the target 2 and the substrate 4 in an inert gas atmosphere, so that the material of the target 2 is sputtered. In the sputtering device in which the material of the target 2 or the compound of the material and the reaction gas inside the substrate 4 which has been evaporated is formed on the inner peripheral surface of the substrate 4 as a thin film, gas is introduced into the inside of the substrate 4. A pipe (11) is provided, and a gas outflow hole (12) for letting out an inert gas or a mixed gas of an inert gas and a reaction gas is provided only in the central portion in the axial direction of the portion of the gas introduction pipe (11) located inside the base body. It is characterized by being formed.
本発明においては、前記基体４の軸心方向中央付近と
は、基体４の軸心方向長の1/3〜1/2の範囲にわたる中央
部分とされている。In the present invention, the vicinity of the center of the base body 4 in the axial direction is defined as a central portion in the range of 1/3 to 1/2 of the axial length of the base body 4.
また、前記ガス導入管11は、ターゲット２の外周面から
等距離を保つように配置され、前記ガス流出孔12は軸心
方向に沿って所定のピッチで設けられている。Further, the gas introduction pipe 11 is arranged so as to keep an equal distance from the outer peripheral surface of the target 2, and the gas outflow holes 12 are provided at a predetermined pitch along the axial direction.
前記ガス導入管11の軸心とターゲット２の外周面間の距
離ｌは、ターゲット２の外周面と基体４の内周面間の距
離Ｌの1/3〜2/5とされ、ガス流出孔12は、直径0.5〜1.0
mm、ピッチ50〜100mmとされている。The distance l between the axial center of the gas introduction pipe 11 and the outer peripheral surface of the target 2 is set to 1/3 to 2/5 of the distance L between the outer peripheral surface of the target 2 and the inner peripheral surface of the substrate 4, and the gas outflow hole is formed. 12 has a diameter of 0.5 to 1.0
mm, pitch 50 to 100 mm.
更に、ガス導入管11を基体４の軸心と平行で、ターゲッ
ト２の周囲に周方向等ピッチで複数本配置し、且つ、基
体４を円筒状とし、該基体４をその軸心回りに回転する
駆動手段を備えるのが好ましい。Further, a plurality of gas introducing pipes 11 are arranged in parallel with the axis of the base body 4 around the target 2 at equal pitches in the circumferential direction, and the base body 4 has a cylindrical shape, and the base body 4 is rotated around the axis center thereof. It is preferable to provide a driving means for operating.
（作用） 本発明によれば、基体４及びターゲット２が収容されて
いる真空容器１を陽極とし、ターゲット２を陰極とする
と共に、真空容器１内にガス導入管11から不活性ガス又
は不活性ガスと反応ガスの混合ガスを供給し、不活性ガ
ス雰囲気中で、ターゲット２と基体４間でグロー放電を
生起せしめる。(Operation) According to the present invention, the vacuum container 1 accommodating the substrate 4 and the target 2 is used as an anode, the target 2 is used as a cathode, and an inert gas or inert gas is introduced into the vacuum container 1 from the gas introduction pipe 11. A mixed gas of a gas and a reaction gas is supplied to cause glow discharge between the target 2 and the substrate 4 in an inert gas atmosphere.
すると、ターゲット２の材料がスパッタ蒸発せしめら
れ、ターゲットの材料から成る薄膜が基体４の内周面上
に形成される。反応ガスとの混合ガスの場合は、この蒸
発した材料と反応ガスとが反応し、その反応によって生
起した化合物が薄膜として基体４の内周面上に形成され
る。Then, the material of the target 2 is evaporated by sputtering, and a thin film made of the material of the target is formed on the inner peripheral surface of the substrate 4. In the case of a mixed gas with a reaction gas, the evaporated material reacts with the reaction gas, and a compound generated by the reaction is formed as a thin film on the inner peripheral surface of the substrate 4.
この場合、ガス導入管11のガス流出孔12が、基体４内部
の軸心方向中央部にのみ設けられているので、基体４内
軸心方向のガス圧力分布が略均一化され、基体４内周面
に形成される薄膜の膜厚が全面にわたって略均一にな
る。In this case, since the gas outflow hole 12 of the gas introduction pipe 11 is provided only in the central portion of the base body 4 in the axial direction, the gas pressure distribution in the axial direction of the base body 4 is substantially uniform, and The thickness of the thin film formed on the peripheral surface is substantially uniform over the entire surface.
（実施例） 以下、本発明の実施例を図面に基づき説明する。(Example) Hereinafter, the Example of this invention is described based on drawing.
第１図〜第３図は、第１実施例を示し、１は容器、２は
円柱状のターゲットで、該ターゲット２は純Ti等から成
り、容器１の側壁に挿通固着されており、容器１が陽極
とされると共にターゲット２が陰極とされ、電源３が接
続されている。1 to 3 show the first embodiment, 1 is a container, 2 is a columnar target, and the target 2 is made of pure Ti or the like, and is fixed by being inserted through the side wall of the container 1. 1 is used as an anode, target 2 is used as a cathode, and a power source 3 is connected.
４は円筒状基体で、容器１内に軸受５を介して横架装着
された回転筒体６内に、嵌脱自在に設けられ、該基体４
及び回転筒体６は、ターゲット２に同心状に外嵌されて
いる。そして、回転筒体６には、外周端部に伝動傘歯車
７が嵌着され、この傘歯車７に駆動傘歯車８を介して伝
動モータ９が連結されており、この伝動モータ９によ
り、回転筒体６と共に円筒状基体４が、ターゲット２軸
心回りに回転駆動される。Reference numeral 4 denotes a cylindrical base body, which is removably provided in a rotary cylinder body 6 horizontally mounted in the container 1 via bearings 5.
The rotary cylinder 6 is fitted onto the target 2 concentrically. A transmission bevel gear 7 is fitted to the outer peripheral end of the rotary cylinder 6, and a transmission motor 9 is connected to the bevel gear 7 via a driving bevel gear 8. The cylindrical substrate 4 together with the cylindrical body 6 is driven to rotate about the axis of the target 2 axis.
10は排気管で、容器１の底部に接続され、容器１内の気
体を排出するように、図外の排気ポンプに導かれてい
る。An exhaust pipe 10 is connected to the bottom of the container 1 and is guided to an exhaust pump (not shown) so as to discharge the gas in the container 1.
11はガス導入管で、円筒状基体４内部に不活性ガス（例
えばArガス等）又は不活性ガスと反応ガス（例えばN2ガ
スやO2ガス等）の混合ガスを供給するものであり、容器
１の底壁を貫通して折曲され、円筒状基体４の内部に、
その軸心方向全長にわたり該軸心と平行に配設されてい
る。Reference numeral 11 denotes a gas introduction pipe for supplying an inert gas (for example, Ar gas or the like) or a mixed gas of an inert gas and a reaction gas (for example, N 2 gas or O 2 gas) into the cylindrical substrate 4, Bent through the bottom wall of the container 1 and inside the cylindrical substrate 4,
It is arranged parallel to the axial center over the entire length in the axial direction.
そして、このガス導入管11としては、例えば、外径が５
〜10m、肉厚0.5〜1.0mmの中空パイプが採用されて、先
端部が閉塞されている。また、ガス導入管11の軸心とタ
ーゲット２の外周面間の距離ｌは、第３図に示すよう
に、ターゲット２の外周面と円筒状基体４の内周面間の
距離Ｌの約1/3〜2/5程度とされるのが好ましく、例え
ば、Ｌが20mmでｌが6.2〜8.2mmとされる。The gas introduction pipe 11 has, for example, an outer diameter of 5
A hollow pipe with a wall thickness of ~ 10m and a wall thickness of 0.5-1.0mm is used, and the tip is closed. Further, the distance 1 between the axis of the gas introducing pipe 11 and the outer peripheral surface of the target 2 is about 1 of the distance L between the outer peripheral surface of the target 2 and the inner peripheral surface of the cylindrical substrate 4, as shown in FIG. It is preferably about / 3 to 2/5, for example, L is 20 mm and l is 6.2 to 8.2 mm.
さらに、ガス導入管11には、第２図に示すように、基体
４内部に位置する部分に、該部分の軸心方向中央付近
に、円筒状基体４の長さL1の略1/3〜1/2の範囲L2にわた
って、ガス流出孔12が設けられている。そして、このガ
ス流出孔12は、直径が0.5〜1.0mmで、ピッチp50〜100mm
とするのが好ましい。16は真空計である。Further, as shown in FIG. 2, in the gas introduction pipe 11, in a portion located inside the base body 4, near the center in the axial direction of the portion, approximately 1/3 of the length L 1 of the cylindrical base body 4 is provided. The gas outflow hole 12 is provided over a range L 2 of up to ½. The gas outflow holes 12 have a diameter of 0.5 to 1.0 mm and a pitch of p50 to 100 mm.
Is preferred. 16 is a vacuum gauge.
上記のように構成した実施例によれば、基体４内周面に
TiNの薄膜を形成する場合には、ターゲット２を純Tiか
ら成るものとし、第１図に示すような状態で、電動モー
タ９により回転筒体６を回転駆動させて、基体４を回転
させると共に、ガス導入管11から基体４内部にArガスと
N2ガスの混合ガスを供給して、その流出孔12から基体４
内周面に向って流出させる。According to the embodiment configured as described above, the inner peripheral surface of the base 4 is
When a thin film of TiN is formed, the target 2 is made of pure Ti, and the rotary cylinder 6 is rotationally driven by the electric motor 9 in the state shown in FIG. , Ar gas from the gas introduction pipe 11 into the substrate 4
A mixed gas of N 2 gas is supplied, and the outflow hole 12 supplies the mixed gas to the substrate 4.
Let it flow out toward the inner surface.
この状態で、ターゲット２と基体４間でグロー放電を生
起させると、Arガスイオンにより、ターゲット２の材料
である純Tiがスパッタ蒸発して、これがN2ガス反応し
て、TiとN2の化合物であるTiNの薄膜が基体４内周面に
形成される。When a glow discharge is generated between the target 2 and the substrate 4 in this state, pure Ti, which is the material of the target 2, is sputter-evaporated by Ar gas ions, and this reacts with N 2 gas to produce Ti and N 2 A thin film of TiN, which is a compound, is formed on the inner peripheral surface of the substrate 4.
この場合、導入管11の先端部が基体４内部に挿通され
て、基体４の軸心方向全長にわたるものとされ、導入管
11の基体４内部にある中央部分には、略均一にガスを流
出させる多数の流出孔12が設けられているので、基体４
内部に軸心方向全長にわたってArガス分圧およびN2ガス
分圧を略均一にすることができ、基体４内周面に、全長
にわたって略均一な組成のTiNの薄膜を形成できる。In this case, the tip end of the introduction pipe 11 is inserted into the inside of the base body 4 and extends over the entire length of the base body 4 in the axial direction.
Since a large number of outflow holes 12 are provided in the central portion of the inside of the base body 4 of 11 to allow the gas to flow out substantially uniformly,
The Ar gas partial pressure and the N 2 gas partial pressure can be made substantially uniform over the entire length in the axial direction, and a TiN thin film having a substantially uniform composition over the entire length can be formed on the inner peripheral surface of the substrate 4.
第４図は、上記実施例における円筒状基体４内周面に形
成される薄膜の軸方向膜厚分布を示しており、この図か
ら明らかなように、円筒状基体４の軸方向全長にわたっ
て、略均一な膜厚が得られ、しかも略均一な組成の薄膜
となっている。なお、この場合、具体的には、円筒状基
体４の長さが500mmで、ガス導入管11は直径が6mmでその
ガス流出孔12の直径を0.5mmとすると共にピッチｐを80m
mとしたものであり、Arガス流量を57SCCMとし、真空計1
6による雰囲気圧力を２×10-3Torrに保持した。FIG. 4 shows the axial film thickness distribution of the thin film formed on the inner peripheral surface of the cylindrical substrate 4 in the above-mentioned embodiment. As is clear from this figure, the axial length of the cylindrical substrate 4 is A substantially uniform film thickness is obtained, and a thin film having a substantially uniform composition is obtained. In this case, specifically, the cylindrical substrate 4 has a length of 500 mm, the gas introduction pipe 11 has a diameter of 6 mm, the gas outflow holes 12 have a diameter of 0.5 mm, and the pitch p is 80 m.
m, the Ar gas flow rate was 57 SCCM, and the vacuum gauge 1
The atmospheric pressure of 6 was maintained at 2 × 10 −3 Torr.
尚、薄膜を形成する際には、基体４を回転させたが、こ
れは、より均一な組成の薄膜を形成するためであり、別
に、基体４を回転させなくてもよい。The base 4 was rotated when the thin film was formed, but this is for forming a thin film having a more uniform composition, and the base 4 may not be rotated separately.
ところで、導入管11の軸心とターゲット２の外周面間の
距離ｌを、ターゲット２の外周面と基体４内周面間の距
離Ｌの1/3〜2/5としたのは次の理由による。By the way, the reason why the distance 1 between the axial center of the introduction tube 11 and the outer peripheral surface of the target 2 is set to 1/3 to 2/5 of the distance L between the outer peripheral surface of the target 2 and the inner peripheral surface of the substrate 4 is as follows. by.
側ち、導入管11をターゲット２に近付け過ぎると、グロ
ー放電が不安定となり、導入管11を基体４内周面に近付
け過ぎると、導入管11がスパッタリング粒子を遮蔽し
て、基体４内周面に影ができる。On the other hand, if the introduction tube 11 is too close to the target 2, the glow discharge becomes unstable, and if the introduction tube 11 is too close to the inner peripheral surface of the substrate 4, the introduction tube 11 shields the sputtered particles and the inner circumference of the substrate 4 becomes large. There is a shadow on the surface.
そこで、これらの事情を考慮して、導入管11の位置が上
記のように設定されている。Therefore, in consideration of these circumstances, the position of the introduction pipe 11 is set as described above.
又、導入管11の流出孔12の直径は下記のようにして定め
ている。Further, the diameter of the outflow hole 12 of the introduction pipe 11 is determined as follows.
即ち、各流出孔12からのN2ガス等のガスの略均一な流れ
を得るためには、 （ｉ）導入管11内でのガスの流れを粘性流とする。That is, in order to obtain a substantially uniform flow of gas such as N 2 gas from each outflow hole 12, (i) the gas flow in the introduction pipe 11 is made to be a viscous flow.
（ii）各流出孔12からのガスの流れを臨界状態とする。(Ii) The gas flow from each outflow hole 12 is brought into a critical state.
との必要性がある。And there is a need.
上記（ｉ）の理由は、もし、分子流となると、ガス源に
近い流出孔12からガスが殆ど出てしまい、導入管11先端
部側の流出孔12からはガスが殆ど流出しないと云う結果
となるからである。The reason for (i) above is that if a molecular flow occurs, almost all the gas will flow out of the outflow hole 12 near the gas source, and almost no gas will flow out of the outflow hole 12 on the tip end side of the introduction pipe 11. It is because
又、上記（ii）の理由は、もし、臨界状態でないと、導
入管11が長くなった場合、導入管11内における圧力損失
のため、導入管11の各流出孔12位置での背圧が異なるこ
ととなり、その結果、各流出孔12からのガスの流れがガ
ス源に近い方が多くなることになるからであり、これを
避けるために、各流出孔12からのガスの流れを臨界状態
として、基本的に、流出孔12の横断面積のみでガスの流
量を決定できる様にしている。Further, the reason for the above (ii) is that, if the introduction pipe 11 is long unless it is in a critical state, the back pressure at each outflow hole 12 position of the introduction pipe 11 is due to a pressure loss in the introduction pipe 11. The reason for this is that the flow of gas from each outflow hole 12 becomes greater near the gas source as a result, and in order to avoid this, the gas flow from each outflow hole 12 must be in a critical state. As a basic rule, the gas flow rate can be determined only by the cross-sectional area of the outflow hole 12.
ところで、上記（ｉ）（ii）の点を考慮すれば、導入管
11の内径が5mmで、ガスの流量が10SCCMの場合には、流
出孔12の直径が0.5mm程度とすべきであるが、実際に
は、導入管11の太さ、肉厚をも考慮して、流出孔12を精
度良く容易に加工できるように、流出孔12の直径を0.5
〜1.0mmとしている。By the way, considering the points (i) and (ii) above, the introduction pipe
When the inner diameter of 11 is 5 mm and the gas flow rate is 10 SCCM, the diameter of the outflow hole 12 should be about 0.5 mm, but in reality, the thickness and thickness of the introduction pipe 11 should also be considered. The diameter of the outflow hole 12 so that it can be machined accurately and easily.
~ 1.0mm.
又、流出孔12のピッチは、実験により、50〜100mmと定
めている。Further, the pitch of the outflow holes 12 is set to 50 to 100 mm by an experiment.
ところで、反応ガスとしてO2ガスを用いれば、O2の活性
が非常に高いため、基体４内周面上で成膜むらが出来易
すい。By the way, when O 2 gas is used as the reaction gas, the activity of O 2 is very high, and thus it is easy to form unevenness of the film on the inner peripheral surface of the substrate 4.
これを解決するのが、第５図に示す本発明の第２実施例
で、導入管11がターゲット２の周囲に、周方向等ピッチ
で４本配設されて、基体４内周面に向って略均一にO2ガ
スが流出するようにされている。This is solved by the second embodiment of the present invention shown in FIG. 5, in which four introducing pipes 11 are arranged around the target 2 at equal pitches in the circumferential direction and face the inner peripheral surface of the base 4. O 2 gas is made to flow out substantially uniformly.
尚、実施例では、多数の流出孔が等ピッチで配設された
導入管を用いたが、上記のような導入管の代わりに、極
めて多数の細孔（流出孔）を有する焼結ステンレス鋼繊
維製パイプを導入管として使用してもよい。In the examples, the introduction pipe having a large number of outflow holes arranged at an equal pitch was used. Instead of the introduction pipe as described above, a sintered stainless steel having an extremely large number of pores (outflow holes) is used. A fiber pipe may be used as the introduction pipe.
又、基体は、円筒以上の四角筒や六角筒であっても良
く、要する筒体であればよい。Further, the base body may be a rectangular or hexagonal cylinder or a hexagonal cylinder, and may be any required cylinder.
さらに、上記実施例では、ターゲット２及び筒上基体４
を水平状に架設しているが、第８図に示すように立設状
に容器１内に設けてもよいこと勿論である。Furthermore, in the above embodiment, the target 2 and the cylindrical base 4
Although it is installed horizontally, it is needless to say that it may be installed upright in the container 1 as shown in FIG.
（発明の効果） 本発明にかかるスパッタリング装置は、上述のように、
基体４内部にターゲット２と平行に設けられたガス導入
管11には、基体４内部に位置する部分の軸心方向中央部
に、不活性ガスまたは、不活性ガスと反応ガスの混合ガ
スを略均一に流出させるガス流出孔12が形成されている
から、筒状基体４内部にその軸方向全長にわたってガス
圧力の均一化を図ることができ、筒状基体４の内周面全
面にわたって、略均一な組成と膜厚の薄膜を形成するこ
とができる。(Effect of the Invention) The sputtering apparatus according to the present invention, as described above,
In the gas introducing pipe 11 provided inside the base body 4 in parallel with the target 2, an inert gas or a mixed gas of an inert gas and a reaction gas is substantially provided at a central portion in the axial center of a portion located inside the base body 4. Since the gas outflow holes 12 that allow the gas to flow out uniformly are formed, the gas pressure can be made uniform within the entire length of the tubular base body 4 in the axial direction, and the entire inner peripheral surface of the tubular base body 4 can be made substantially uniform. A thin film having various compositions and film thicknesses can be formed.
第１図〜第４図は本発明の第１実施例を示すもので、第
１図は全体の中央縦断正面図、第２図は要部拡大断面
図、第３図は第１図のＡ−Ａ線断面拡大図、第４図は本
発明装置による筒状基体内周面の軸方向膜厚分布図、第
５図は本発明の第２実施例を示す要部の断面図、第６図
及び第７図は従来例を示す概略説明図、第８図は本願の
先願に係るスパッタリング装置の中央縦断正面図、第９
図は第８図に示す装置による成膜の軸方向膜厚分布図で
ある。 ２……ターゲット、４……筒状基体、11……ガス導入
管、12……ガス流出孔。1 to 4 show a first embodiment of the present invention. FIG. 1 is a front view of a central longitudinal section of the whole, FIG. 2 is an enlarged sectional view of an essential part, and FIG. 3 is A of FIG. FIG. 4 is an enlarged cross-sectional view taken along the line A, FIG. 4 is an axial film thickness distribution diagram of the inner peripheral surface of the cylindrical substrate by the device of the present invention, and FIG. 7 and 8 are schematic explanatory views showing a conventional example, FIG. 8 is a central longitudinal front view of a sputtering apparatus according to the prior application of the present application, and FIG.
The figure is an axial film thickness distribution chart of film formation by the apparatus shown in FIG. 2 ... Target, 4 ... Cylindrical substrate, 11 ... Gas introduction pipe, 12 ... Gas outflow hole.
フロントページの続き (56)参考文献 特開 昭49−81284（ＪＰ，Ａ) 特開 昭62−151564（ＪＰ，Ａ) 特開 平１−188669（ＪＰ，Ａ) 特公 昭53−33759（ＪＰ，Ｂ１) 特公 昭57−2272（ＪＰ，Ｂ２)Continuation of the front page (56) Reference JP-A-49-81284 (JP, A) JP-A-62-151564 (JP, A) JP-A-1-188669 (JP, A) JP-B-53-33759 (JP , B1) JP-B-57-2272 (JP, B2)
Claims (5)
状に外嵌され、不活性ガス雰囲気中で、前記ターゲット
（２）と基体（４）間でグロー放電が生起されて、前記
ターゲット（２）の材料がスパッタ蒸発せしめられ、こ
の蒸発したターゲット（２）の材料または、この材料と
前記基体（４）内部の反応ガスとの化合物が、薄膜とし
て前記基体（４）内周面に形成されるスパッタリング装
置において、 前記基体（４）内部にガス導入管（11）が配設され、該
ガス導入管（11）の基体内部に位置する部分の軸心方向
中央部にのみ、不活性ガスまたは、不活性ガスと反応ガ
スの混合ガスを流出させるガス流出孔（12）が形成され
ていることを特徴とするスパッタリング装置。1. A cylindrical substrate (4) is concentrically fitted onto a target (2), and a glow discharge is generated between the target (2) and the substrate (4) in an inert gas atmosphere, The material of the target (2) is sputter-evaporated, and the evaporated material of the target (2) or a compound of this material and the reaction gas inside the base body (4) forms a thin film on the inner circumference of the base body (4). In a sputtering device formed on a surface, a gas introducing pipe (11) is arranged inside the base body (4), and only a central portion in the axial direction of a portion of the gas introducing pipe (11) located inside the base body, A sputtering apparatus, wherein a gas outflow hole (12) for outflowing an inert gas or a mixed gas of an inert gas and a reaction gas is formed.
（４）の軸心方向全長の1/3〜1/2の範囲にわたる中央部
分であることを特徴とする請求項１記載のスパッタリン
グ装置。2. The vicinity of the center of the base body (4) in the axial direction is a central portion in the range of 1/3 to 1/2 of the total length of the base body (4) in the axial direction. The sputtering apparatus described.
外周面から等距離を保つように配置され、ガス流出孔
（12）は軸心方向に沿って所定のピッチで設けられてい
ることを特徴とする請求項２記載のスパッタリング装
置。3. The gas introduction pipe (11) is arranged so as to keep an equal distance from the outer peripheral surface of the target (2), and the gas outflow holes (12) are provided at a predetermined pitch along the axial direction. The sputtering apparatus according to claim 2, wherein:
（２）の外周面間の距離（ｌ）は、ターゲット（２）の
外周面と基体（４）の内周面間の距離（Ｌ）の1/3〜2/5
とされ、ガス流出孔（12）は、直径0.5〜1.0mm、ピッチ
50〜100mmとされていることを特徴とする請求項３記載
のスパッタリング装置。4. The distance (1) between the axis of the gas introduction pipe (11) and the outer peripheral surface of the target (2) is the distance between the outer peripheral surface of the target (2) and the inner peripheral surface of the substrate (4) ( L) 1/3 to 2/5
The gas outflow holes (12) have a diameter of 0.5 to 1.0 mm and a pitch.
The sputtering device according to claim 3, wherein the sputtering device has a thickness of 50 to 100 mm.
行で、ターゲット（２）の周囲に周方向等ピッチで複数
本配置され、且つ、基体（４）が円筒状とされ、該基体
（４）をその軸心回りに回転する駆動手段が備えられて
いることを特徴とする請求項４記載のスパッタリング装
置。5. A gas introducing pipe (11) is arranged parallel to the axis of the substrate (4), and a plurality of gas introducing pipes (11) are arranged around the target (2) at an equal pitch in the circumferential direction, and the substrate (4) has a cylindrical shape. The sputtering apparatus according to claim 4, further comprising drive means for rotating the substrate (4) around its axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1190213A JPH07116597B2 (en) | 1989-07-20 | 1989-07-20 | Sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1190213A JPH07116597B2 (en) | 1989-07-20 | 1989-07-20 | Sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0353066A JPH0353066A (en) | 1991-03-07 |
| JPH07116597B2 true JPH07116597B2 (en) | 1995-12-13 |
Family
ID=16254350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1190213A Expired - Lifetime JPH07116597B2 (en) | 1989-07-20 | 1989-07-20 | Sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07116597B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4776599B2 (en) * | 2007-08-30 | 2011-09-21 | 株式会社東芝 | Film forming apparatus and film forming method |
| JP6223875B2 (en) * | 2014-03-14 | 2017-11-01 | 三井造船株式会社 | Film forming apparatus, film forming method, and cylinder member with film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5141031B2 (en) * | 1972-12-14 | 1976-11-08 | ||
| JPS62151564A (en) * | 1985-12-25 | 1987-07-06 | Sharp Corp | Film forming device for photosensitive body |
| JPS6311506A (en) * | 1986-07-01 | 1988-01-19 | Murata Mfg Co Ltd | Production of aluminum nitride powder |
-
1989
- 1989-07-20 JP JP1190213A patent/JPH07116597B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0353066A (en) | 1991-03-07 |
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