JPH07120683B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH07120683B2 JPH07120683B2 JP63254801A JP25480188A JPH07120683B2 JP H07120683 B2 JPH07120683 B2 JP H07120683B2 JP 63254801 A JP63254801 A JP 63254801A JP 25480188 A JP25480188 A JP 25480188A JP H07120683 B2 JPH07120683 B2 JP H07120683B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- semiconductor
- molding machine
- semiconductor device
- injection molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title description 9
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 238000001746 injection moulding Methods 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000004804 winding Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 9
- 238000000465 moulding Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 238000004382 potting Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229920000491 Polyphenylsulfone Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、フィルムキャリアを用いた半導体装置の製造
方法に関するものである。The present invention relates to a method for manufacturing a semiconductor device using a film carrier.
[従来の技術] 半導体装置は、一般にリードフレームに設けたダイパッ
ドに半導体チップを取付け、半導体チップの外部電極と
リードフレームの端子とをそれぞれワイヤで接続し、半
導体チップとワイヤの周囲及び端子の一部を熱硬化性樹
脂あるいはセラミックでパッケージしたのち端子部分で
切断し、端子を適宜折曲げて製造している。このため、
パッケージが厚くなり、全体として大形になっている。[Prior Art] In a semiconductor device, a semiconductor chip is generally attached to a die pad provided on a lead frame, and an external electrode of the semiconductor chip and a terminal of the lead frame are connected by wires, respectively. The part is packaged with thermosetting resin or ceramic, cut at the terminal portion, and the terminal is bent appropriately for manufacture. For this reason,
The package is thicker and overall is larger.
ところで、最近は電子機器の小形化、薄形化に伴なっ
て、これに使用する半導体装置も高密度実装するため、
小形で薄いものが要望されている。By the way, recently, with the miniaturization and thinning of electronic equipment, the semiconductor devices used for this are also mounted at high density.
A small and thin product is required.
このような要望に応えるべく、絶縁樹脂フィルムのデバ
イスホールに半導体チップを配設し、この半導体チップ
とデバイスホールにオーバーハングしたフィンガーとを
接続した半導体装置(TAB実装方式)を液状樹脂で封止
する方法が実用化されている。To meet these demands, a semiconductor chip is placed in the device hole of the insulating resin film, and the semiconductor device (TAB mounting method) that connects this semiconductor chip and the finger that overhangs the device hole is sealed with liquid resin. The method of doing has been put to practical use.
第6図は従来のTAB実装の一例を示すもので、先ず、
(a)図に示すように、フィルムキャリア1のデバイス
ホール2に半導体チップ5を配設し、半導体チップ5
と、フィルムキャリア1のデバイスホール2内にオーバ
ーハングしたフィンガー3とを接続する。この状態で半
導体チップ5及びフィンガー3を含むフィルムキャリア
1に刷毛等により液状樹脂を塗布して硬化させ、あるい
は(b)図に示すように、注射筒の如き樹脂供給器17に
入れられた液状樹脂16に圧力を加えてノズル18から滴下
させ、(c)図に示すように、半導体チップ5及びフィ
ンガー3を被覆して硬化し、封止19をする。FIG. 6 shows an example of conventional TAB mounting. First,
(A) As shown in the figure, the semiconductor chip 5 is arranged in the device hole 2 of the film carrier 1 and
And the finger 3 overhanging in the device hole 2 of the film carrier 1 are connected. In this state, a liquid resin is applied to the film carrier 1 including the semiconductor chip 5 and the fingers 3 with a brush or the like to be cured, or, as shown in FIG. 2B, a liquid contained in a resin supply device 17 such as an injection cylinder. Pressure is applied to the resin 16 to make it drop from the nozzle 18, and the semiconductor chip 5 and the fingers 3 are covered and cured as shown in FIG.
また、第7図に示すように、フィンガー3を含む半導体
チップ5を封止する範囲20に対応した大きさ、形状を有
する窓21を備えたマスク22を用いる方法が提案され、実
用化されている。この方法は、第8図(a)、(b)に
示すように、半導体チップ5が取付けられたフィルムキ
ャリア1に、窓21内に半導体チップ5が入るようにマス
ク22を重ね合せ、マスク22上に載せた液状の樹脂16を例
えばスキージ23で矢印方向に移動させて窓21内に充填
し、(c)図に示すようにマスク22を除去して硬化さ
せ、封止19をするようにしたものである。Further, as shown in FIG. 7, a method using a mask 22 having a window 21 having a size and shape corresponding to a range 20 for sealing the semiconductor chip 5 including the fingers 3 has been proposed and put into practical use. There is. In this method, as shown in FIGS. 8A and 8B, a mask 22 is superposed on the film carrier 1 to which the semiconductor chip 5 is attached so that the semiconductor chip 5 fits in the window 21, and the mask 22 The liquid resin 16 placed on top is moved in the direction of the arrow with a squeegee 23, for example, to fill the window 21, and the mask 22 is removed and cured as shown in FIG. It was done.
[発明が解決しようとする課題] 第6図に示したTAB実装では、手作業又はロボット等を
使用し、半導体チップの形状に合せて1個ずつ封止して
いるので、きわめて面倒で多大の工数を要し、その上半
導体チップの形状に合わせてポッティングすること(形
状コントロール)が困難であった。さらにポッティング
の中央が盛り上って高くなり易いため薄くすることが困
難で、ときには頂面を削るようなこともあった。[Problems to be Solved by the Invention] The TAB mounting shown in FIG. 6 is extremely troublesome and enormous because it is manually or robotically used to seal the semiconductor chips one by one according to the shape of the semiconductor chip. It takes man-hours and it is difficult to perform potting (shape control) according to the shape of the semiconductor chip. Furthermore, it is difficult to make the potting thin because the center of the potting tends to rise and become high, and sometimes the top surface is scraped.
さらに、第8図で説明したTAB実装では、窓に液状封止
材料を充填した際、窓の下部から基板とマスクとの間に
毛細管現象により液状樹脂が侵入し、マスクを除去する
と、(c)図に示すように封止19した樹脂の外周がバリ
状に裾19aを引き、封止面積が大きくなるばかりでな
く、形状も不規則になって外観もよくないという問題が
あった。Further, in the TAB mounting described in FIG. 8, when the window is filled with the liquid sealing material, the liquid resin intrudes from the lower portion of the window between the substrate and the mask due to the capillary phenomenon, and the mask is removed. As shown in the figure, there is a problem that not only the sealing area is increased by drawing the hem 19a in a burr shape on the outer periphery of the sealed resin 19, but also the shape is irregular and the appearance is not good.
また、特に重要なことは、何れの場合も耐湿性や耐熱衝
撃性の面で劣り、信頼性に欠けるという問題がある。Further, it is particularly important that in any case, the moisture resistance and the thermal shock resistance are inferior and the reliability is lacking.
本発明は、上記の課題を解決すべくなされたもので、半
導体チップを自動的に封止することができ、しかも耐湿
性や耐熱衝撃性に優れた半導体装置を得ることのできる
半導体装置の製造方法を実現することを目的としたもの
である。The present invention has been made to solve the above problems, and is a method of manufacturing a semiconductor device capable of automatically sealing a semiconductor chip and obtaining a semiconductor device excellent in moisture resistance and thermal shock resistance. The purpose is to realize the method.
[課題を解決するための手段] 本発明に係る半導体装置の製造方法は、半導体チップの
電極に合わせて配置されたフィンガーを有しかつ前記フ
ィンガーによって支持される前記半導体チップを帯状の
フィルムキャリアテープに等間隔に実装し、所定の個数
の前記半導体チップが射出成型機内に間欠的に順次移送
し、前記射出成型機に移送された個々の前記半導体チッ
プが前記射出成型機の上型と下型とのそれぞれに対応し
て設けられた前記所定の個数の凹部によって密封し、前
記下型の前記凹部に前記射出成形機内にある前記テープ
とは垂直方向に複数個設けられた樹脂注入穴から注入さ
れる樹脂によって前記半導体チップを樹脂封止し、樹脂
封止された前記半導体チップを順次巻取り用のリールに
移送することを特徴とするものである。[Means for Solving the Problems] A method of manufacturing a semiconductor device according to the present invention is directed to a strip-shaped film carrier tape for a semiconductor chip, which has fingers arranged to match the electrodes of the semiconductor chip and is supported by the fingers. Mounted at equal intervals, a predetermined number of the semiconductor chips are intermittently sequentially transferred into the injection molding machine, and the individual semiconductor chips transferred to the injection molding machine are the upper mold and the lower mold of the injection molding machine. And a predetermined number of recesses provided corresponding to each of them are sealed, and a plurality of resin injection holes are provided in the recesses of the lower mold in a direction perpendicular to the tape in the injection molding machine. The semiconductor chip is resin-sealed with the resin thus formed, and the resin-sealed semiconductor chip is sequentially transferred to a reel for winding.
[発明の実施例] 第1図は本発明を実施するフィルムキャリアに半導体チ
ップを実装した状態を示す平面図、第2図はそのA−A
断面図である。図において、1は長さ方向に等間隔で多
数のデバイスホール2,2a,2b,…が設けられたポリイミド
フィルムからなる帯状のフィルムキャリア(以下フィル
ムという)である。3はフィルム1に設けられた銅の如
き導電率の良好な金属からなる多数のフィンガーで、先
端部はデバイスホール2,2a,2b,…内にそれぞれ突出して
オーバーハングしている。4はフィルム1を搬送するた
めのスプロケット穴である。5,5a,5b,…はデバイスホー
ル2,2a,2b,…内に配設された半導体チップで、その外部
電極には各フィンガー3が直接接続されている。[Embodiment of the Invention] FIG. 1 is a plan view showing a state in which a semiconductor chip is mounted on a film carrier embodying the present invention, and FIG.
FIG. In the figure, 1 is a strip-shaped film carrier (hereinafter referred to as a film) made of a polyimide film in which a large number of device holes 2, 2a, 2b, ... Are provided at equal intervals in the length direction. Reference numeral 3 designates a large number of fingers made of a metal having a good conductivity such as copper provided on the film 1, and the tips thereof respectively project into the device holes 2, 2a, 2b, ... And overhang. Reference numeral 4 is a sprocket hole for transporting the film 1. 5, 5a, 5b, ... are semiconductor chips arranged in the device holes 2, 2a, 2b, .. The fingers 3 are directly connected to their external electrodes.
上記のような半導体チップ5,5a,5b,…が実装されたフィ
ルム1は、例えばリール12に巻回され、第3図に示すよ
うに射出成型機8の一方の側に配設される。13は射出成
型機8の他方の側に設けられた巻取りリールである。The film 1 on which the above semiconductor chips 5, 5a, 5b, ... Are mounted is wound around, for example, a reel 12 and is disposed on one side of the injection molding machine 8 as shown in FIG. Reference numeral 13 is a take-up reel provided on the other side of the injection molding machine 8.
次に、フィルム1を矢印方向に送り出し、パッケージの
形状に整合した複数個の凹部が設けられた上型9と下型
10との間に、凹部に対応して半導体チップ5,5a,5b,…が
送り込まれたときは、フィルム1の送りを停止する。つ
いで、第4図に示すように上型9を下降させ、下型10を
上昇させて凹部9a,10aの間に半導体チップ5,5a,5b,…を
含むフィルム1を密封する。この状態で、下型の凹部に
キャリアテープと垂直方向に設けられた複数個の注入穴
11から各凹部9a,10a内に熱可塑性樹脂を高圧で注入し、
半導体チップ5の下面を除く周囲及びフィンガー3の一
部を封止し、パッケージ6,6a,6b,…を成型する。Next, the film 1 is sent out in the direction of the arrow, and the upper mold 9 and the lower mold are provided with a plurality of recesses matching the package shape
When the semiconductor chips 5, 5a, 5b, ... Are fed in between 10 and 10, the feeding of the film 1 is stopped. Then, as shown in FIG. 4, the upper mold 9 is lowered and the lower mold 10 is raised to seal the film 1 including the semiconductor chips 5, 5a, 5b, ... Between the recesses 9a, 10a. In this state, a plurality of injection holes are provided in the recess of the lower mold in the direction perpendicular to the carrier tape.
Inject thermoplastic resin from 11 into each recess 9a, 10a at high pressure,
The periphery of the semiconductor chip 5 excluding the lower surface and a part of the fingers 3 are sealed, and the packages 6, 6a, 6b, ... Are molded.
パッケージ6,6a,6bが固化したときは、上型9と下型10
を開放して巻取りリール13を回転させ、成型が終ったパ
ッケージ6,6a,6b,…を上型9と下型10の外へ移動させ、
次の半導体チップを上型9と下型10の間に位置させる。
同様にして半導体チップ5を1個又は複数個ずつパッケ
ージし、順次巻取りリール13に巻取る。このようにし
て、半導体チップ5,5a,5b,…が実装された帯状のフィル
ム1は、間欠的に送られてすべての半導体チップ5,5a,5
b,…がパッケージされ、巻取りリール13に巻取られる。When the packages 6, 6a, 6b are solidified, the upper mold 9 and the lower mold 10
Is opened and the take-up reel 13 is rotated to move the molded packages 6, 6a, 6b, ... to the outside of the upper mold 9 and the lower mold 10,
The next semiconductor chip is placed between the upper mold 9 and the lower mold 10.
Similarly, one or a plurality of semiconductor chips 5 are packaged and sequentially wound on the winding reel 13. In this way, the band-shaped film 1 on which the semiconductor chips 5, 5a, 5b, ... Are mounted is intermittently sent and all the semiconductor chips 5, 5a, 5
b, ... Are packaged and wound on the take-up reel 13.
パッケージされた半導体装置7を基板に実装する場合
は、フィルム1を巻取りリール13から巻戻し、第1図に
示すようにパッケージ6の1点鎖線Cの位置でフィンガ
ー3を切断すれば、薄くかつ小形の半導体装置7が得ら
れる。次に、第5図に示すようにこの半導体装置7を基
板14の表面に当接し、各フィンガー3を基板14に設けた
配線パターン15にそれぞれ接続すれば、実装が完了す
る。When the packaged semiconductor device 7 is mounted on the substrate, the film 1 is rewound from the take-up reel 13 and the finger 3 is cut at the position of the chain line C of the package 6 as shown in FIG. In addition, a small semiconductor device 7 can be obtained. Next, as shown in FIG. 5, the semiconductor device 7 is brought into contact with the surface of the substrate 14 and each finger 3 is connected to the wiring pattern 15 provided on the substrate 14, whereby the mounting is completed.
上記のような半導体装置の製造方法において、パッケー
ジに使用する熱可塑性樹脂には、分子が一方向に配向す
る液晶ポリマやポリフェニルサルフオン(PPS)の如く
線膨張率の小さい樹脂に、フイラ(シリカ等)を混入し
て線膨張率を2×10-5以下に調整し、かつはんだ耐熱試
験温度(260℃)によっても熱変形しないものを使用す
る。この結果大形の半導体チップ(6×9mm)にパッケ
ージを施した場合でも、クラックが生じないのである。In the method of manufacturing a semiconductor device as described above, the thermoplastic resin used for the package may be a resin having a small linear expansion coefficient such as liquid crystal polymer or polyphenyl sulfone (PPS) in which molecules are oriented in one direction, and a filler ( Use a material that has a linear expansion coefficient of 2 x 10 -5 or less mixed with silica, etc. and that does not undergo thermal deformation even at the solder heat resistance test temperature (260 ° C). As a result, even when a large semiconductor chip (6 × 9 mm) is packaged, cracks do not occur.
上記のようにして製造した半導体装置と、従来の液状封
止剤を使用して封止したTAB実装半導体装置とを、−65
℃(30分)、常温(10分)、150℃(30分)、常温(10
分)の80分サイクルで繰返して温度試験を行なった結果
を、表1に示す。A semiconductor device manufactured as described above and a TAB-mounted semiconductor device sealed using a conventional liquid sealing agent are
℃ (30 minutes), room temperature (10 minutes), 150 ℃ (30 minutes), room temperature (10 minutes)
Table 1 shows the results obtained by repeating the temperature test in a cycle of 80 minutes.
表1から明らかなように、従来のTAB実装半導体装置
は、250サイクルで約13%の不良品が発生し、1,000サイ
クルで全数不良品となったが、本発明によって製造した
半導体装置は750〜1,000サイクルで約3%の不良品が発
生したにすぎなかった。 As is clear from Table 1, in the conventional TAB-mounted semiconductor device, about 13% of defective products were generated in 250 cycles, and all were defective in 1,000 cycles. Only about 3% of defective products were generated in 1,000 cycles.
また、温度85℃、湿度85%の雰囲気中に半導体装置を配
設し、6Vの電圧を印加して通電耐湿試験を行なった結果
を、表2に示す。In addition, Table 2 shows the results of conducting a humidity resistance test by placing the semiconductor device in an atmosphere having a temperature of 85 ° C. and a humidity of 85% and applying a voltage of 6V.
このように、従来のTAB実装半導体装置は500時間で不良
品が発生し始め、2000時間では40%以上の不良品が発生
したが、本発明に係る半導体装置は1,500時間で不良品
が発生し、2000時間でも僅かに6〜7%に止まった。 As described above, in the conventional TAB-mounted semiconductor device, defective products started to occur in 500 hours, and 40% or more of defective products occurred in 2000 hours, but the semiconductor device according to the present invention generated defective products in 1,500 hours. Even at 2000 hours, it was only 6-7%.
表1、表2から明らかなように、本発明によって製造し
た半導体装置は、液状封止剤を使用して封止した従来の
TAB実装半導体装置に比べて、信頼性の面で各段に優れ
ていることが明らかになった。As is clear from Table 1 and Table 2, the semiconductor device manufactured according to the present invention has a conventional sealing method using a liquid sealing agent.
It has become clear that it is far superior to TAB-mounted semiconductor devices in terms of reliability.
本発明に係る半導体装置の製造にあたり、パッケージに
熱可塑性樹脂を使用した場合は、成型の際に成型歩留り
落ちした樹脂(20〜30%ある)を再生できるので材料費
を低減することができる。また、成型後の冷却時間も極
く短かいので全体として成型時間を大幅に短縮すること
ができ、生産性を向上させることができる。In the production of the semiconductor device according to the present invention, when a thermoplastic resin is used for the package, the resin (20 to 30%) that has been dropped in the molding yield at the time of molding can be regenerated, so that the material cost can be reduced. Further, since the cooling time after molding is extremely short, the molding time can be greatly shortened as a whole, and the productivity can be improved.
上記の説明では、半導体チップが取付けられた帯状のフ
ィルムをリールに巻いて射出成型機の近傍に配置し、こ
れを間欠的に射出成型機に送り込んでパッケージする場
合について説明したが、必ずしもリールに巻回する必要
はなく、帯状のまゝで射出成型機に送り込んでもよい。
また、熱可塑性樹脂によりパッケージを成型する場合に
ついて説明したが、若干能率が悪く、成型歩留り落ちの
利用もできない欠点はあるけれども、熱硬化性樹脂を用
いてパッケージを成型してもよい。In the above description, the band-shaped film to which the semiconductor chip is attached is wound around the reel and is arranged in the vicinity of the injection molding machine, and the case where the film is intermittently sent to the injection molding machine for packaging is explained. It is not necessary to wind, and it may be fed into the injection molding machine in a strip shape.
Although the case of molding a package with a thermoplastic resin has been described, the package may be molded with a thermosetting resin, although there is a drawback that the efficiency is slightly low and the molding yield cannot be used.
[発明の効果] 以上説明したように本発明によれば、フィルムキャリア
に半導体チップを取付け、帯状のままで射出成型機によ
り樹脂封止してパッケージを成形して小形かつ薄形の半
導体装置を製造するに当たって、射出成型機の下型に1
つの凹部当たり複数個の注入穴が設けられていることに
より、上型から樹脂が注入される場合に比べて、半導体
チップ及びフィンガーへの注入樹脂の当たりを柔らかく
することができる。[Effects of the Invention] As described above, according to the present invention, a semiconductor chip is attached to a film carrier, and a small and thin semiconductor device is formed by molding a package in a band-like shape by resin-sealing with an injection molding machine. In manufacturing, the lower mold of the injection molding machine 1
By providing a plurality of injection holes per recess, it is possible to soften the contact of the injected resin to the semiconductor chip and the fingers, as compared with the case where the resin is injected from the upper mold.
また、注入穴が複数個で、かつテープと垂直方向に設け
られていることにより、樹脂を型中に均一に注入できる
と共に、半導体チップ及びフィンガーにかかる樹脂注入
の圧力を注入穴が1つの場合より均一とすることができ
る効果がある。さらに、この均一化により隙間無く注入
ができるので、注入時間の短縮が達成される。In addition, when a plurality of injection holes are provided in the direction perpendicular to the tape, the resin can be uniformly injected into the mold, and the resin injection pressure applied to the semiconductor chip and the fingers can be obtained with one injection hole. There is an effect that it can be made more uniform. Furthermore, this homogenization allows the injection without gaps, thus achieving a reduction in the injection time.
このため、従来の液状封止剤によるTAB実装方式の半導
体装置の製造方法に比べて、生産性が大幅に向上し、ま
た耐熱衝撃性や耐湿性が著しく向上して信頼性が向上す
る等、実施面での効果が大である。Therefore, as compared with the conventional method of manufacturing a semiconductor device of the TAB mounting method using a liquid encapsulant, the productivity is significantly improved, and the thermal shock resistance and the moisture resistance are significantly improved, and the reliability is improved. The implementation effect is great.
第1図は本発明に係るフィルムキャリアに半導体チップ
を実装した例を示す平面図、第2図はそのA−A断面
図、第3図はパッケージの成型状態を示す模式図、第4
図は射出成型機によるパッケージの成型を説明するため
の断面図、第5図は本発明によって製造した半導体装置
の実施例を示す断面図、第6図(a)〜(c)は従来の
ポッティングによるTAB実施例を示す説明図、第7図は
印刷用マスクの一例の説明図、第8図(a)〜(c)は
従来の印刷によるTAB実施例の説明図である。 1:フィルム、2,2a,2b:デバイスホール、3:フィンガー、
5,5a,5b:半導体チップ、6,6a,6b:パッケージ、7:半導体
装置、8:射出成型機。FIG. 1 is a plan view showing an example in which a semiconductor chip is mounted on a film carrier according to the present invention, FIG. 2 is a sectional view taken along line AA, FIG. 3 is a schematic view showing a molded state of a package, and FIG.
FIG. 5 is a sectional view for explaining molding of a package by an injection molding machine, FIG. 5 is a sectional view showing an embodiment of a semiconductor device manufactured by the present invention, and FIGS. 6 (a) to 6 (c) are conventional potting. FIG. 7 is an explanatory view of an example of a TAB according to FIG. 7, FIG. 7 is an explanatory view of an example of a printing mask, and FIGS. 8A to 8C are explanatory views of a TAB embodiment by conventional printing. 1: Film, 2, 2a, 2b: Device hole, 3: Finger,
5,5a, 5b: semiconductor chip, 6,6a, 6b: package, 7: semiconductor device, 8: injection molding machine.
Claims (1)
フィンガーを有しかつ前記フィンガーによって支持され
る前記半導体チップを帯状のフィルムキャリアテープに
等間隔に実装し、所定の個数の前記半導体チップが射出
成型機内に間欠的に順次移送し、前記射出成型機に移送
された個々の前記半導体チップが前記射出成型機の上型
と下型とのそれぞれに対応して設けられた前記所定の個
数の凹部によって密封し、前記下型の前記凹部に前記射
出成形機内にある前記テープとは垂直方向に複数個設け
られた樹脂注入穴から注入される樹脂によって前記半導
体チップを樹脂封止し、樹脂封止された前記半導体チッ
プを順次巻取り用のリールに移送することを特徴とする
半導体装置の製造方法。1. A semiconductor chip, which has fingers arranged according to electrodes of a semiconductor chip and is supported by the fingers, is mounted on a strip-shaped film carrier tape at equal intervals, and a predetermined number of the semiconductor chips are The semiconductor chips transferred to the injection molding machine are sequentially transferred intermittently, and the individual semiconductor chips transferred to the injection molding machine are provided in correspondence with the upper mold and the lower mold of the injection molding machine, respectively. The semiconductor chip is sealed with a recess, and the semiconductor chip is sealed with resin injected from a plurality of resin injection holes provided in the recess of the lower mold in a direction perpendicular to the tape in the injection molding machine. A method of manufacturing a semiconductor device, wherein the stopped semiconductor chips are sequentially transferred to a reel for winding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254801A JPH07120683B2 (en) | 1988-10-12 | 1988-10-12 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254801A JPH07120683B2 (en) | 1988-10-12 | 1988-10-12 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02102552A JPH02102552A (en) | 1990-04-16 |
| JPH07120683B2 true JPH07120683B2 (en) | 1995-12-20 |
Family
ID=17270081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63254801A Expired - Lifetime JPH07120683B2 (en) | 1988-10-12 | 1988-10-12 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120683B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021130197A (en) * | 2018-05-22 | 2021-09-09 | デンカ株式会社 | Release film for semiconductor encapsulation process and manufacturing method of electronic parts using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204245A (en) * | 1983-05-06 | 1984-11-19 | Mitsubishi Electric Corp | Resin sealing process of semicondutor device |
| JPS6142616A (en) * | 1984-08-03 | 1986-03-01 | Hamamatsu Photonics Kk | Fresnel zone plate by acousto-optical element |
| JPS6148257A (en) * | 1984-08-15 | 1986-03-08 | Hitachi Ltd | Communication line controller |
-
1988
- 1988-10-12 JP JP63254801A patent/JPH07120683B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02102552A (en) | 1990-04-16 |
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