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JPH07120856B2 - Method for manufacturing ceramic laminated substrate - Google Patents
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JPH07120856B2 - Method for manufacturing ceramic laminated substrate - Google Patents

Method for manufacturing ceramic laminated substrate

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Publication number
JPH07120856B2
JPH07120856B2 JP925190A JP925190A JPH07120856B2 JP H07120856 B2 JPH07120856 B2 JP H07120856B2 JP 925190 A JP925190 A JP 925190A JP 925190 A JP925190 A JP 925190A JP H07120856 B2 JPH07120856 B2 JP H07120856B2
Authority
JP
Japan
Prior art keywords
main body
polishing
conductor pattern
laminated substrate
ceramic laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP925190A
Other languages
Japanese (ja)
Other versions
JPH03212990A (en
Inventor
博光 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP925190A priority Critical patent/JPH07120856B2/en
Publication of JPH03212990A publication Critical patent/JPH03212990A/en
Publication of JPH07120856B2 publication Critical patent/JPH07120856B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔概要〕 セラミック基板の製造方法に関し、 セラミック積層基板の表面に導体パターン形成前に本体
のポアに残留する研磨残滓を確実に除去することを目的
とし、 本体内部から表面に露出するビアが形成されたセラミッ
ク積層基板の上記本体の表面を機械研磨する研磨工程
と、該研磨後のビアが露出する本体の表面に導体パター
ンを形成する導体パターン形成工程との間に、研磨時に
本体に付着した研磨残滓を溶剤を用いて洗浄する洗浄工
程を設けるセラミック積層基板の製造方法において、上
記洗浄工程と導体パターン形成工程との間に、真空又は
不活性雰囲気中で上記研磨残滓に含まれるアルコールの
沸点よりも高温で本体を加熱する加熱処理工程を設けた
構成とした。
DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention relates to a method for manufacturing a ceramic substrate, wherein the polishing residue remaining in the pores of the main body is surely removed before forming a conductor pattern on the surface of the ceramic laminated substrate. Between a polishing step of mechanically polishing the surface of the main body of the ceramic laminated substrate on which the via exposed to the is formed, and a conductor pattern forming step of forming a conductor pattern on the surface of the main body where the via after exposure is exposed, In the method for manufacturing a ceramic laminated substrate, which comprises a cleaning step of cleaning the polishing residue attached to the main body at the time of polishing with a solvent, the polishing residue in a vacuum or an inert atmosphere between the cleaning step and the conductor pattern forming step. The heat treatment step of heating the main body at a temperature higher than the boiling point of the alcohol contained in was added.

〔産業上の利用分野〕[Industrial application field]

本発明は、セラミック積層基板の製造方法に関する。 The present invention relates to a method for manufacturing a ceramic laminated substrate.

〔従来の技術〕[Conventional technology]

一般に、セラミック積層基板は、セラミック基板の本
体、すなわち導体パターンの形成されていない状態を形
成する工程と、該本体の表面にスパッタリングとエッチ
ングによって導体パターンを形成する導体パターン形成
工程とを経て作られる。
Generally, a ceramic laminated substrate is manufactured through a step of forming a main body of a ceramic substrate, that is, a state in which no conductor pattern is formed, and a conductor pattern forming step of forming a conductor pattern on the surface of the main body by sputtering and etching. .

本体形成工程では、グリーンシートにビアを形成し、ビ
アに導体を埋めてから内層パターンを印刷により形成
し、内層パターンを形成した所要層数の内層グリーンシ
ートを、ビア導体を埋設した所要層数の研磨層グリーン
シートで挟んで加圧し、更に加圧加熱して焼結させるこ
とにより、上記導体が充填されたビアを内部より表面に
露出させた本体が形成される。
In the main body formation process, the vias are formed in the green sheet, the conductors are embedded in the vias, then the inner layer pattern is formed by printing, and the inner layer green sheet of the required number of layers with the inner layer pattern is formed By sandwiching between the polishing layer green sheets and applying pressure, and further applying pressure and heating to sinter, a main body in which the via filled with the conductor is exposed from the inside to the surface is formed.

そして、導体パターン形成工程では、研磨した本体の表
面に導体パターンが形成される。
Then, in the conductor pattern forming step, the conductor pattern is formed on the polished surface of the main body.

例えば第3図(a)に示すように、焼結工程を終了した
本体1の表面の平面度は低い。導体パターン形成工程で
第3図(e)に示すように本体1の表面を正確な平面に
形成する必要があるので、焼成工程と導体パターン形成
工程との間に研磨工程が設けられる。
For example, as shown in FIG. 3A, the flatness of the surface of the main body 1 after the sintering process is low. Since it is necessary to form the surface of the main body 1 in an accurate plane as shown in FIG. 3 (e) in the conductor pattern forming step, a polishing step is provided between the firing step and the conductor pattern forming step.

この研磨工程では、第3図(b)に示すようにラップ盤
5等が使用され、研磨剤6を回転する定盤12とバキュー
ムチャック13に支持した本体1との間に供給しながら本
体1を定盤12に押さえ付けて、第3図(d)に示すよう
に本体1の両面をその表面のうねりが10μm程度以下に
なるように研磨する。
In this polishing step, as shown in FIG. 3 (b), a lapping machine 5 or the like is used, and the polishing agent 6 is supplied between the rotating surface plate 12 and the main body 1 supported by the vacuum chuck 13 while the main body 1 is being supplied. Is pressed against the surface plate 12, and both surfaces of the main body 1 are polished so that the waviness of the surface thereof is about 10 μm or less as shown in FIG. 3 (d).

上記研磨剤6としては、例えば直径1μm程度のダイア
モンド等の砥粒と潤滑オイルとしての高級アルコールと
を含むスラリー状の研磨剤6が使用され、研磨工程を終
了した時点では、研磨剤6や研磨屑等からなる研磨残滓
7が本体1の表面や、例えば第3図(d)に示すよう
に、ビア2内の導体3の表面に開口したポア4の内部に
残留している。この研磨残滓7は上記の高級アルコール
を含んでいるので、このまま導体パターン形成工程に移
行する場合には大気中に揮発することなく導体パターン
形成工程に持ち込まれる。
As the abrasive 6, for example, a slurry abrasive 6 containing abrasive grains such as diamond having a diameter of about 1 μm and higher alcohol as lubricating oil is used. The polishing residue 7 made of scraps and the like remains on the surface of the main body 1 and inside the pores 4 opened on the surface of the conductor 3 in the via 2, for example, as shown in FIG. Since this polishing residue 7 contains the above-mentioned higher alcohol, when the process proceeds to the conductor pattern forming process as it is, it is brought to the conductor pattern forming process without being volatilized into the atmosphere.

導体パターン形成工程では、スパッタリングによって本
体1の表面全体に形成された導体薄膜をエッチングし
て、第3図(e)に示すように、本体1の表面に導体パ
ターン11が形成されるが、この導体パターン形成工程に
持ち込まれた研磨残滓7は導体パターン形成工程中に例
えばキュアリング工程で加熱され、分解して気体を発生
し、導体パターン11を酸化させたり、導体パターン11を
腐食したり、導体パターン11を本体1から剥離させたり
するおそれがある。尚、導体パターン形成工程では、上
記スパッタリング以外にも蒸着、CVD等の手法で金属薄
膜を形成することもできるが、これらいずれの手法を用
いたとしても本体1は一定の高温に曝されることにな
り、上記と同様に導体パターン11が損傷されることにな
る。
In the conductor pattern forming step, the conductor thin film formed on the entire surface of the main body 1 is etched by sputtering to form the conductor pattern 11 on the surface of the main body 1 as shown in FIG. 3 (e). The polishing residue 7 brought into the conductor pattern forming step is heated in the conductor pattern forming step, for example, in the curing step, decomposes to generate gas, oxidizes the conductor pattern 11, corrodes the conductor pattern 11, The conductor pattern 11 may be peeled off from the main body 1. In the conductor pattern forming step, the metal thin film may be formed by a method such as vapor deposition or CVD other than the above-mentioned sputtering. However, even if any of these methods is used, the main body 1 is exposed to a constant high temperature. As a result, the conductor pattern 11 is damaged in the same manner as above.

従って、一般には、第3図(c)に示すように、研磨工
程と導体パターン形成工程との間に本体1を洗浄する洗
浄工程を設けて、研磨残滓7を除去してから導体パター
ン形成工程に移行するように構成される。
Therefore, generally, as shown in FIG. 3C, a cleaning step for cleaning the main body 1 is provided between the polishing step and the conductor pattern forming step to remove the polishing residue 7 and then the conductor pattern forming step. Is configured to transition to.

この洗浄工程では、クロロセン、フレオン、アルコール
等、ほぼ室温で揮発する有機溶剤8中に本体1を浸漬
し、超音波発振器9で有機溶剤を振動させる超音波洗浄
方法が採用され、上記の有機溶剤は洗浄工程から導体パ
ターン形成工程に移行する間に大気中に蒸発する。
In this cleaning step, an ultrasonic cleaning method is employed in which the main body 1 is immersed in an organic solvent 8 that volatilizes at about room temperature, such as chlorothene, freon, and alcohol, and the ultrasonic oscillator 9 vibrates the organic solvent. Evaporates into the atmosphere during the transition from the cleaning step to the conductor pattern forming step.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかしながら、例えば第3図(d)に示すように研磨工
程を終了した時点でポア4が本体1の表面に連通してい
ると、研磨工程中にポア4に研磨残滓7が浸入し、研磨
工程の終了後にもそのポア4内に研磨残滓7が残され
る。しかも、このポア4内に残留した研磨残滓7は従来
の洗浄工程では完全に除去できないことが多い。そし
て、このポア4内に残留した研磨残滓7が導体パターン
形成工程において加熱され、分解してポア4から噴出
し、導体パターン11の酸化させたり、腐食したり、本体
1の表面から剥離させたりして、本体1と導体パターン
11との間の導体接続を信頼性を損なうという問題があ
る。
However, for example, as shown in FIG. 3D, if the pores 4 are in communication with the surface of the main body 1 at the end of the polishing step, the polishing residue 7 will penetrate into the pores 4 during the polishing step, and the polishing step After the end of, the polishing residue 7 is left in the pores 4. Moreover, the polishing residue 7 remaining in the pores 4 cannot often be completely removed by the conventional cleaning process. Then, the polishing residue 7 remaining in the pores 4 is heated in the conductor pattern forming step, decomposes and is ejected from the pores 4, and the conductor pattern 11 is oxidized, corroded, or peeled from the surface of the main body 1. Then, the main body 1 and the conductor pattern
There is a problem that the reliability of the conductor connection with 11 is impaired.

そして、この問題は、特に処理速度の高速化、小型化等
の要請に基づき高密度・低熱膨張率・低誘電率等の特性
を発揮できるセラミック積層基板においては非常に重要
な問題とされている。
And, this problem is regarded as a very important problem particularly in a ceramic laminated substrate which can exhibit characteristics such as high density, low thermal expansion coefficient, low dielectric constant, etc., in response to demands for higher processing speed, smaller size and the like. .

本発明は、上記の事情を考慮してなされたものであり、
セラミック基板の本体表面に導体パターン形成前に本体
1のポア4に残留する研磨残滓7を確実に除去できるよ
うにしたセラミック積層基板の製造方法を提供すること
を目的とする。
The present invention has been made in consideration of the above circumstances,
An object of the present invention is to provide a method for manufacturing a ceramic laminated substrate in which the polishing residue 7 remaining in the pores 4 of the body 1 can be reliably removed before the conductor pattern is formed on the body surface of the ceramic substrate.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明は、例えば第1図に示すように、本体1内部から
表面に露出するビア2が形成されたセラミック積層基板
の上記本体1の表面を機械研磨する研磨工程と、該研磨
後のビア2が露出する本体の表面に導体パターン11を形
成する導体パターン形成工程との間に、研磨時に本体1
に付着した研磨残滓7を溶剤を用いて洗浄する洗浄工程
を設けるセラミック積層基板の製造方法を前提として、
上記の目的を達成するために、上記洗浄工程と導体パタ
ーン形成工程との間に、真空又は不活性雰囲気中で上記
研磨残滓7に含まれるアルコールの沸点よりも高温で本
体1を加熱する加熱処理工程を設けるようにした。
For example, as shown in FIG. 1, the present invention includes a polishing step of mechanically polishing the surface of the main body 1 of the ceramic laminated substrate in which the via 2 exposed from the inside of the main body 1 is formed, and the via 2 after the polishing. During the conductor pattern forming step of forming the conductor pattern 11 on the surface of the body where the body is exposed, the body 1 is polished.
Assuming a method for manufacturing a ceramic laminated substrate, which is provided with a cleaning step for cleaning the polishing residue 7 attached to
In order to achieve the above object, a heat treatment for heating the main body 1 between the cleaning step and the conductor pattern forming step at a temperature higher than the boiling point of the alcohol contained in the polishing residue 7 in a vacuum or an inert atmosphere. A process is provided.

〔作用〕[Action]

本発明においては、洗浄工程において研磨残滓7の大部
分が本体1から洗い落とされて除去されるが、主に研磨
剤に含まれるアルコールが研磨残滓7として導体3のポ
ア4内に残留している。そしてこのポア4内に残留して
いるアルコールを含んだ研磨残滓7は導体パターン形成
工程に先立つ加熱処理工程においてその沸点以上に加熱
され、上記アルコール分がポア4から噴出して除去され
る。この加熱処理は真空又は不活性雰囲気10中で行われ
るので、該加熱処理によって分解された研磨残滓7によ
って本体1の導体が酸化されるおそれはほとんどない。
In the present invention, most of the polishing residue 7 is washed off and removed from the main body 1 in the cleaning step, but alcohol mainly contained in the polishing agent remains in the pores 4 of the conductor 3 as the polishing residue 7. There is. Then, the polishing residue 7 containing alcohol remaining in the pores 4 is heated to a temperature higher than its boiling point in the heat treatment step prior to the conductor pattern forming step, and the alcohol content is ejected from the pores 4 and removed. Since this heat treatment is performed in a vacuum or an inert atmosphere 10, there is almost no risk that the conductor of the main body 1 will be oxidized by the polishing residue 7 decomposed by the heat treatment.

〔実施例〕〔Example〕

以下、本発明の一実施例を図面に基づき説明する。 An embodiment of the present invention will be described below with reference to the drawings.

このセラミック積層基板の製造方法において、本体形成
工程中の焼成工程終了時の本体は、第1図(a)に示す
ように、表面の平面度が低く、ビア2内の導体3中にポ
ア4が形成されている。
In this method for manufacturing a ceramic laminated substrate, as shown in FIG. 1 (a), the main body at the end of the firing step in the main body forming step has a low surface flatness and has pores 4 in the conductor 3 in the via 2. Are formed.

そこで、焼成工程の終了後、第1図(f)に示すように
本体1の表面に導体パターン11を形成する導体パターン
形成工程に移行する前に第1図(b)に示すように、本
体1を研磨する研磨工程が設けられる。
Therefore, after the firing step is completed and before the conductor pattern forming step of forming the conductor pattern 11 on the surface of the main body 1 is performed as shown in FIG. 1 (f), as shown in FIG. A polishing step of polishing 1 is provided.

この研磨工程では、第1図(b)に示すように、例えば
ラップ盤5による機械研磨が行われる。このラップ盤5
は、所定の回転数で水平回転する定盤12の上面にバキュ
ームチャック13に支持させた本体1を所定の圧力で押し
つけながら、定盤12と本体1との間に平均粒径1μm程
度のダイヤモンド砥粒と、潤滑オイルとしてエチレング
リコール、グリセリン等の高級アルコールとを含むスラ
リー状の研磨剤6を供給して、ダイヤモンド砥粒で本体
1を研磨するようにしてある。
In this polishing step, as shown in FIG. 1 (b), mechanical polishing is performed by, for example, a lapping machine 5. This lapping machine 5
Is a diamond having an average particle size of about 1 μm between the surface plate 12 and the main body 1 while pressing the main body 1 supported by the vacuum chuck 13 against the upper surface of the surface plate 12 that horizontally rotates at a predetermined rotation speed with a predetermined pressure. A slurry abrasive 6 containing abrasive grains and a higher alcohol such as ethylene glycol or glycerin as lubricating oil is supplied to polish the main body 1 with diamond abrasive grains.

研磨工程を終了した本体1の表面はそのうねりが例えば
10μm程度以下の平面度に仕上げられており、その表面
及びこれに開口するポア4内には研磨屑や研磨剤からな
る研磨残滓7が付着している。この研磨残滓7は、上記
の高級アルコールを含んでいるので、導体パターン形成
工程で加熱されると分解して、導体パターン11の酸化、
腐食、剥離等を招来するので、導体パターン形成工程に
移行する前に本体1は洗浄される。
The undulations on the surface of the main body 1 after the polishing process are, for example,
The surface is finished to have a flatness of about 10 μm or less, and polishing residues 7 made of polishing dust and a polishing agent are attached to the surface and the pores 4 opening therein. Since this polishing residue 7 contains the above-mentioned higher alcohol, it decomposes when heated in the conductor pattern forming step to oxidize the conductor pattern 11,
Since it causes corrosion, peeling, etc., the main body 1 is washed before proceeding to the conductor pattern forming step.

本体1を洗浄する洗浄工程は、第1図(c)に示すよう
に、クロロセン、フレオン、アルコール等のほぼ室温で
揮発する有機溶剤8中に本体1を浸漬し、超音波発振器
9で有機溶剤を振動させる超音波洗浄方法が採用され
る。
In the cleaning step for cleaning the main body 1, as shown in FIG. 1 (c), the main body 1 is immersed in an organic solvent 8 such as chlorothene, freon, alcohol, etc. An ultrasonic cleaning method of vibrating is adopted.

この洗浄工程では、ビア2を構成する導体3の表面に付
着した研磨残滓7及び本体1の表面に大きく開口したポ
ア4内の研磨残滓7は完全に除去される。しかしなが
ら、第1図(d)に示すように、導体3の表面への開口
面積が小さいポア4内の研磨残滓7は洗浄されずに取り
残されることが多い。
In this cleaning step, the polishing residue 7 adhering to the surface of the conductor 3 forming the via 2 and the polishing residue 7 in the pores 4 having a large opening in the surface of the main body 1 are completely removed. However, as shown in FIG. 1 (d), the polishing residue 7 in the pore 4 having a small opening area to the surface of the conductor 3 is often left uncleaned.

そこで、このようなポア4内に残留した研磨残滓7を除
去するため、加熱処理工程が設けられる。
Therefore, in order to remove the polishing residue 7 remaining in the pores 4, a heat treatment step is provided.

即ち、第1図(e)に示すように、真空中又は窒素等の
不活性ガス10中に洗浄工程を終了した本体1を置いて、
ヒータ14で研磨残滓7に含まれる高級アルコールの沸点
(例えば、エチレングリコールの場合は197.5℃、グリ
セリンの場合は290℃)よりも高温(例えば350℃以上)
に加熱して、高級アルコールを分解し、ポア4から噴出
させて除去する。
That is, as shown in FIG. 1 (e), the main body 1 after the cleaning process is placed in a vacuum or an inert gas 10 such as nitrogen,
Higher than boiling point of higher alcohol contained in polishing residue 7 with heater 14 (eg, 197.5 ° C for ethylene glycol, 290 ° C for glycerin) (eg, 350 ° C or higher)
The higher alcohol is decomposed by heating to 1, and is ejected from the pore 4 to be removed.

この加熱処理工程では、例えば第2図に示すように、所
定のパージ期間aにわたって室温で加熱室内を窒素ガス
で置き換え、この酸素パージに引き続く昇温期間bにわ
たって雰囲気温度を本体1に大きな熱歪み、クラック、
層間剥離等が発生しない程度の昇温勾配で所定の温度
(ここでは350℃)まで昇温させ、保温期間cでは雰囲
気温度を所定の温度に保持し、この後、冷却期間dにわ
たって、雰囲気温度を本体1に大きな熱歪み、クラッ
ク、層間剥離等が発生しない程度の降温勾配で窒素冷却
または間接水冷によって室温まで冷却させるという手順
が採用される。
In this heat treatment step, as shown in FIG. 2, for example, the heating chamber is replaced with nitrogen gas at room temperature for a predetermined purge period a, and the atmosphere temperature is increased by a large thermal strain on the main body 1 during a temperature raising period b following the oxygen purge. ,crack,
The temperature is raised to a predetermined temperature (here, 350 ° C.) with a temperature rising gradient such that delamination does not occur, the atmosphere temperature is maintained at the predetermined temperature during the heat retention period c, and then the ambient temperature is maintained for the cooling period d. The procedure is adopted in which the main body 1 is cooled to room temperature by nitrogen cooling or indirect water cooling with a temperature decreasing gradient that does not cause large heat distortion, cracks, delamination and the like.

そして、この加熱処理工程が終了した後、第1図(f)
に示すように、導体パターン形成工程で、まずスパッタ
リングによって本体1の表面全体に薄膜の導体層を形成
しその導体層をエッチングすることによって、導体パタ
ーン11が形成される。研磨残滓7は洗浄工程と加熱処理
工程とによって完全に本体1から除去されているので、
この導体パターン形成工程で研磨残滓7が分解して導体
パターン11を酸化させたり、腐食したり、本体1から剥
離させたりするおそれはなく、本体1と導体パターン11
の接続信頼性は著しく高められる。
Then, after this heat treatment step is completed, FIG.
As shown in FIG. 3, in the conductor pattern forming step, first, a conductor pattern 11 is formed by forming a thin conductor layer on the entire surface of the main body 1 by sputtering and etching the conductor layer. Since the polishing residue 7 is completely removed from the main body 1 by the cleaning process and the heat treatment process,
In this conductor pattern forming step, there is no possibility that the polishing residue 7 is decomposed and the conductor pattern 11 is oxidized, corroded, or peeled from the main body 1, and the main body 1 and the conductor pattern 11 are not separated.
Connection reliability is significantly increased.

上記の一実施例においては、加熱処理工程が不活性ガス
10中で本体1を加熱するように構成されているが、これ
に代えて例えば10-1気圧以下の真空度の真空中で本体1
を加熱するように構成してもよい。また、上記加熱処理
工程における不活性ガスの圧力は常圧である必要はな
く、これよりも低い圧力に保持するようにしてもよい。
In one embodiment described above, the heat treatment step is performed with an inert gas.
The main body 1 is configured to be heated in 10; however, instead of this, the main body 1 is placed in a vacuum with a vacuum degree of, for example, 10 -1 atmosphere or less.
May be heated. Further, the pressure of the inert gas in the heat treatment step does not have to be normal pressure, and may be maintained at a pressure lower than this.

〔発明の効果〕〔The invention's effect〕

以上のように、本発明においては、洗浄工程と導体パタ
ーン形成工程との間に本体を不活性雰囲気中で研磨残滓
に含まれるアルコールの沸点以上の温度で加熱する加熱
処理工程を設け、加熱処理工程で本体のポアに残留する
研磨残滓を熱分解し、ポアから噴出させて除去するの
で、導体パターン形成前に本体のポアに残留する研磨残
滓を確実に除去できる。また、これにより、導体パター
ン形成工程において研磨残滓による導体パターンの酸
化、腐食あるいは剥離が発生することを防止できるの
で、本体と導体パターンとの導体接続に対する信頼性を
著しく高めることができる。
As described above, in the present invention, between the cleaning step and the conductor pattern forming step, a heat treatment step of heating the main body at a temperature equal to or higher than the boiling point of alcohol contained in the polishing residue in an inert atmosphere is provided, and the heat treatment is performed. Since the polishing residue remaining in the pores of the main body is thermally decomposed and ejected from the pores and removed in the process, the polishing residue remaining in the pores of the main body can be reliably removed before the conductor pattern is formed. Further, as a result, it is possible to prevent the conductive pattern from being oxidized, corroded or peeled off due to polishing residue in the conductive pattern forming step, so that the reliability of the conductor connection between the main body and the conductive pattern can be remarkably enhanced.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例に係るセラミック積層基板の
製造方法の手順を順に示す説明図、第2図はその加熱処
理工程の温度管理線図、第3図は従来のセラミック積層
基板の製造方法の手順を順に示す説明図である。 図中、 1……本体、7……研磨残滓、 10……不活性ガス、11……導体パターン。
FIG. 1 is an explanatory view sequentially showing the procedure of a method for manufacturing a ceramic laminated substrate according to an embodiment of the present invention, FIG. 2 is a temperature control diagram of the heat treatment step, and FIG. 3 is a conventional ceramic laminated substrate. It is explanatory drawing which shows the procedure of a manufacturing method in order. In the figure, 1 ... Main body, 7 ... Polishing residue, 10 ... Inert gas, 11 ... Conductor pattern.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】本体内部から表面に露出するビアが形成さ
れたセラミック積層基板の上記本体の表面を機械研磨す
る研磨工程と、該研磨後のビアが露出する本体の表面に
導体パターンを形成する導体パターン形成工程との間
に、研磨時に本体に付着した研磨残滓を溶剤を用いて洗
浄する洗浄工程を設けるセラミック積層基板の製造方法
において、 上記洗浄工程と導体パターン形成工程との間に、真空又
は不活性雰囲気中で上記研磨残滓に含まれるアルコール
の沸点よりも高温で本体を加熱する加熱処理工程を設け
たことを特徴とする、セラミック積層基板の製造方法。
1. A polishing step of mechanically polishing the surface of the main body of the ceramic laminated substrate having vias exposed from the inside of the main body, and a conductor pattern is formed on the surface of the main body where the vias after polishing are exposed. In the method for manufacturing a ceramic laminated substrate, which is provided with a cleaning step of cleaning the polishing residue adhered to the main body during polishing with a solvent between the conductive pattern forming step, a vacuum is provided between the cleaning step and the conductive pattern forming step. Alternatively, there is provided a heat treatment step of heating the main body at a temperature higher than the boiling point of the alcohol contained in the polishing residue in an inert atmosphere, the method for producing a ceramic laminated substrate.
JP925190A 1990-01-17 1990-01-17 Method for manufacturing ceramic laminated substrate Expired - Fee Related JPH07120856B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP925190A JPH07120856B2 (en) 1990-01-17 1990-01-17 Method for manufacturing ceramic laminated substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP925190A JPH07120856B2 (en) 1990-01-17 1990-01-17 Method for manufacturing ceramic laminated substrate

Publications (2)

Publication Number Publication Date
JPH03212990A JPH03212990A (en) 1991-09-18
JPH07120856B2 true JPH07120856B2 (en) 1995-12-20

Family

ID=11715194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP925190A Expired - Fee Related JPH07120856B2 (en) 1990-01-17 1990-01-17 Method for manufacturing ceramic laminated substrate

Country Status (1)

Country Link
JP (1) JPH07120856B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4848504B2 (en) * 2007-03-14 2011-12-28 公益財団法人新産業創造研究機構 Method for cleaning ceramic substrate or inorganic heat resistant substrate, device manufacturing method using the same, and device

Also Published As

Publication number Publication date
JPH03212990A (en) 1991-09-18

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